JP5614708B2 - 真空遮断器用電極材料の製造方法及び真空遮断器用電極材料 - Google Patents
真空遮断器用電極材料の製造方法及び真空遮断器用電極材料 Download PDFInfo
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- JP5614708B2 JP5614708B2 JP2010143243A JP2010143243A JP5614708B2 JP 5614708 B2 JP5614708 B2 JP 5614708B2 JP 2010143243 A JP2010143243 A JP 2010143243A JP 2010143243 A JP2010143243 A JP 2010143243A JP 5614708 B2 JP5614708 B2 JP 5614708B2
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- electrode material
- vacuum circuit
- circuit breaker
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- 239000007772 electrode material Substances 0.000 title claims description 50
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000002156 mixing Methods 0.000 claims description 34
- 239000000843 powder Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 19
- 230000008595 infiltration Effects 0.000 claims description 13
- 238000001764 infiltration Methods 0.000 claims description 13
- 238000005245 sintering Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 12
- 239000003832 thermite Substances 0.000 claims description 12
- 229910001149 41xx steel Inorganic materials 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 4
- 238000003825 pressing Methods 0.000 claims description 2
- 239000011651 chromium Substances 0.000 description 37
- 229910015202 MoCr Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 12
- 239000000956 alloy Substances 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 8
- 238000000465 moulding Methods 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910017813 Cu—Cr Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Description
表1には、上記した本発明の製造方法の混合工程、プレス焼結工程、Cu溶浸工程とによって製造した真空遮断器用電極材料の実施例を試料NO.1〜12に示し、比較例として従来の方法で製造したCuCr主体の真空遮断器用電極材料を、試料NO.13に示している。
Claims (2)
- 粒径が0.8〜6μmのMo粉と粒径が40〜300μmのテルミットCr粉とを、混合比率をMo:Cr=1:1〜9:1にすると共に混合重量をMo≧Crにして均一に混合する混合工程と、前記混合工程で混合した混合物をプレス圧1〜4t/cm2で加圧成形して成形体を形成し、かつ前記成形体を1100〜1200℃の温度で1〜2時間保持する焼結を行って仮焼結体を作るプレス焼結工程と、前記プレス焼結工程で形成した仮焼結体上にCu薄板を配置し、1100〜1200℃の温度で1〜2時間保持して前記仮焼結体中にCuを液相焼結させて溶侵させるCu溶浸工程からなることを特徴とする真空遮断器用電極材料の製造方法。
- 請求項1記載の製造方法によって製造され、粒径20〜150μmのCuが30〜50wt%と、粒径1〜5μmのCrMoが50〜70wt%を含有することを特徴とする真空遮断器用電極材料。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010143243A JP5614708B2 (ja) | 2010-06-24 | 2010-06-24 | 真空遮断器用電極材料の製造方法及び真空遮断器用電極材料 |
CN201180031314.2A CN103038376B (zh) | 2010-06-24 | 2011-06-20 | 真空断路器用电极材料的制造方法、真空断路器用电极材料和真空断路器用电极 |
TW100121379A TWI455775B (zh) | 2010-06-24 | 2011-06-20 | 真空遮斷器用電極材料之製造方法、真空遮斷器用電極材料及真空遮斷器用電極 |
PCT/JP2011/064608 WO2011162398A1 (ja) | 2010-06-24 | 2011-06-20 | 真空遮断器用電極材料の製造方法、真空遮断器用電極材料及び真空遮断器用電極 |
US13/806,568 US9281136B2 (en) | 2010-06-24 | 2011-06-20 | Method for producing electrode material for vacuum circuit breaker, electrode material for vacuum circuit breaker and electrode for vacuum circuit breaker |
EP11798279.3A EP2586882B1 (en) | 2010-06-24 | 2011-06-20 | Method for producing electrode material for vacuum circuit breaker, electrode material for vacuum circuit breaker and electrode for vacuum circuit breaker |
US14/659,706 US9570245B2 (en) | 2010-06-24 | 2015-03-17 | Method for producing electrode material for vacuum circuit breaker, electrode material for vacuum circuit breaker and electrode for vacuum circuit breaker |
Applications Claiming Priority (1)
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JP2010143243A JP5614708B2 (ja) | 2010-06-24 | 2010-06-24 | 真空遮断器用電極材料の製造方法及び真空遮断器用電極材料 |
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JP2012007203A JP2012007203A (ja) | 2012-01-12 |
JP5614708B2 true JP5614708B2 (ja) | 2014-10-29 |
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Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6051142B2 (ja) * | 2013-10-23 | 2016-12-27 | 株式会社日立製作所 | 真空バルブ用電気接点およびその製造方法 |
JP5862695B2 (ja) | 2014-01-23 | 2016-02-16 | 株式会社明電舎 | 電極材料の製造方法 |
WO2015133264A1 (ja) * | 2014-03-04 | 2015-09-11 | 株式会社明電舎 | 合金 |
US9959986B2 (en) | 2014-03-04 | 2018-05-01 | Meidensha Corporation | Method for producing electrode material |
WO2015133262A1 (ja) * | 2014-03-04 | 2015-09-11 | 株式会社明電舎 | 電極材料 |
JP5920408B2 (ja) | 2014-06-16 | 2016-05-18 | 株式会社明電舎 | 電極材料の製造方法 |
JP6015725B2 (ja) | 2014-09-11 | 2016-10-26 | 株式会社明電舎 | 電極材料の製造方法 |
JP6398530B2 (ja) * | 2014-09-25 | 2018-10-03 | 株式会社明電舎 | 電極材料の製造方法 |
JP6070777B2 (ja) * | 2015-06-24 | 2017-02-01 | 株式会社明電舎 | 電極材料の製造方法 |
JP6090388B2 (ja) | 2015-08-11 | 2017-03-08 | 株式会社明電舎 | 電極材料及び電極材料の製造方法 |
JP6075423B1 (ja) * | 2015-09-03 | 2017-02-08 | 株式会社明電舎 | 真空遮断器 |
JP6323578B1 (ja) | 2017-02-02 | 2018-05-16 | 株式会社明電舎 | 電極材料の製造方法及び電極材料 |
KR102372776B1 (ko) * | 2020-10-26 | 2022-03-10 | 한국생산기술연구원 | Cu-Cr-Mo에 세라믹을 포함한 전기접점소재 제조방법 |
CN114635054B (zh) * | 2022-04-13 | 2023-03-03 | 河南科技大学 | 一种钨铜复合材料及其制备方法 |
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JPS60180026A (ja) * | 1984-02-25 | 1985-09-13 | 株式会社明電舎 | 真空インタラプタの電極材料とその製造方法 |
JPH0760623B2 (ja) * | 1986-01-21 | 1995-06-28 | 株式会社東芝 | 真空バルブ用接点合金 |
JP2874522B2 (ja) * | 1993-07-14 | 1999-03-24 | 株式会社日立製作所 | 真空遮断器及びそれに用いる真空バルブと真空バルブ用電極並びにその製造法 |
KR100400356B1 (ko) * | 2000-12-06 | 2003-10-04 | 한국과학기술연구원 | 진공개폐기용 구리-크롬계 접점 소재의 조직 제어 방법 |
JP2010126791A (ja) * | 2008-11-28 | 2010-06-10 | Jfe Seimitsu Kk | 放熱材料およびそれを用いた半導体用放熱板と半導体用放熱部品、並びに放熱材料の製造方法 |
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