JP5610393B2 - 自己組織化されたナノ構造薄膜の製造方法、ナノ構造薄膜 - Google Patents
自己組織化されたナノ構造薄膜の製造方法、ナノ構造薄膜 Download PDFInfo
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- JP5610393B2 JP5610393B2 JP2010283138A JP2010283138A JP5610393B2 JP 5610393 B2 JP5610393 B2 JP 5610393B2 JP 2010283138 A JP2010283138 A JP 2010283138A JP 2010283138 A JP2010283138 A JP 2010283138A JP 5610393 B2 JP5610393 B2 JP 5610393B2
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- thin film
- self
- thickness
- nanostructured thin
- producing
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- 239000010409 thin film Substances 0.000 title claims description 92
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 238000000034 method Methods 0.000 claims description 47
- 238000010438 heat treatment Methods 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000002086 nanomaterial Substances 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- 230000002776 aggregation Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000004220 aggregation Methods 0.000 claims description 13
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 10
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000395 magnesium oxide Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 230000008646 thermal stress Effects 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical group 0.000 claims description 3
- 238000001338 self-assembly Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 15
- 238000005530 etching Methods 0.000 description 12
- 239000000126 substance Substances 0.000 description 8
- 238000005054 agglomeration Methods 0.000 description 6
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20090132423 | 2009-12-29 | ||
| KR10-2009-0132423 | 2009-12-29 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2011137230A JP2011137230A (ja) | 2011-07-14 |
| JP2011137230A5 JP2011137230A5 (enExample) | 2014-01-30 |
| JP5610393B2 true JP5610393B2 (ja) | 2014-10-22 |
Family
ID=44348913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010283138A Expired - Fee Related JP5610393B2 (ja) | 2009-12-29 | 2010-12-20 | 自己組織化されたナノ構造薄膜の製造方法、ナノ構造薄膜 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5610393B2 (enExample) |
| KR (1) | KR101174321B1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3178067B2 (ja) | 1991-02-26 | 2001-06-18 | ぺんてる株式会社 | スズ−ニッケル二元合金電気めっき液組成物 |
| CN109207949A (zh) * | 2018-10-23 | 2019-01-15 | 宁波工程学院 | 一种镀制非均匀多层薄膜的方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20140036403A (ko) * | 2012-09-13 | 2014-03-26 | 포항공과대학교 산학협력단 | 발광 다이오드의 패턴 형성 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0585773A (ja) * | 1991-09-26 | 1993-04-06 | Central Glass Co Ltd | 基材表面への微細凹凸被膜の形成法 |
| JPH0786282A (ja) * | 1993-09-20 | 1995-03-31 | Oki Electric Ind Co Ltd | 配線形成方法 |
| JP2007242880A (ja) | 2006-03-08 | 2007-09-20 | Tdk Corp | 成膜方法 |
| KR100813243B1 (ko) | 2006-07-04 | 2008-03-13 | 삼성에스디아이 주식회사 | 탄소나노튜브를 이용한 반도체 소자의 층간 배선 및 그제조 방법 |
| JP2008108924A (ja) * | 2006-10-26 | 2008-05-08 | Matsushita Electric Works Ltd | 化合物半導体発光素子およびそれを用いる照明装置ならびに化合物半導体発光素子の製造方法 |
| WO2009113195A1 (ja) * | 2008-03-13 | 2009-09-17 | 大陽日酸株式会社 | ブラシ状カーボンナノ構造物製造用触媒体、触媒体製造方法、ブラシ状カーボンナノ構造物及びその製法 |
| WO2009068756A1 (fr) | 2007-11-28 | 2009-06-04 | Commissariat A L'energie Atomique | Procede de cristallisation |
-
2010
- 2010-12-20 JP JP2010283138A patent/JP5610393B2/ja not_active Expired - Fee Related
- 2010-12-27 KR KR1020100135802A patent/KR101174321B1/ko not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3178067B2 (ja) | 1991-02-26 | 2001-06-18 | ぺんてる株式会社 | スズ−ニッケル二元合金電気めっき液組成物 |
| CN109207949A (zh) * | 2018-10-23 | 2019-01-15 | 宁波工程学院 | 一种镀制非均匀多层薄膜的方法 |
| CN109207949B (zh) * | 2018-10-23 | 2020-06-16 | 宁波工程学院 | 一种镀制非均匀多层薄膜的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011137230A (ja) | 2011-07-14 |
| KR20110076809A (ko) | 2011-07-06 |
| KR101174321B1 (ko) | 2012-08-16 |
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