JP5602145B2 - 接着方法 - Google Patents
接着方法 Download PDFInfo
- Publication number
- JP5602145B2 JP5602145B2 JP2011537998A JP2011537998A JP5602145B2 JP 5602145 B2 JP5602145 B2 JP 5602145B2 JP 2011537998 A JP2011537998 A JP 2011537998A JP 2011537998 A JP2011537998 A JP 2011537998A JP 5602145 B2 JP5602145 B2 JP 5602145B2
- Authority
- JP
- Japan
- Prior art keywords
- article
- wafer
- intermediate layer
- layer
- bulge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/10—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
- B32B37/1018—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure using only vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/14—Semiconductor wafers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10321—Aluminium antimonide [AlSb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10322—Aluminium arsenide [AlAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10323—Aluminium nitride [AlN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10324—Aluminium phosphide [AlP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10325—Boron nitride [BN], e.g. cubic, hexagonal, nanotube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10326—Boron phosphide [BP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10327—Boron arsenide [BAs, B12As2]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10328—Gallium antimonide [GaSb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/1033—Gallium nitride [GaN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10331—Gallium phosphide [GaP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10332—Indium antimonide [InSb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10333—Indium arsenide [InAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10334—Indium nitride [InN]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10335—Indium phosphide [InP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Fluid Mechanics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Joining Of Glass To Other Materials (AREA)
- Lining Or Joining Of Plastics Or The Like (AREA)
- Casting Or Compression Moulding Of Plastics Or The Like (AREA)
Description
従来技術においてこれまで知られている接着方法には、同様な問題がある。
a)第1表面を備えた第1物品を用意する段階と、
b)中間層のための、流動性を有する凝固可能な材料を用意する段階と、
c)第2表面を備えた第2物品を用意する段階と、
d)第1表面を包囲する膨らみが形成されるように、第1表面上に中間層の材料を塗布する段階と、
e)第1物品および第2物品の周囲に真空を発生させる段階と、
f)密封キャビティが形成されるように、第2物品の第2表面を周方向の膨らみに接触させる段階と、
g)キャビティ内へのガスの流入を生じさせることなくキャビティが消失するように(換言すればキャビティの体積がゼロに近づくように、好ましくは完全に消失するように)、周囲の圧力を増大させる段階と、
h)中間層の材料の粘度を高くする段階とを有することを特徴とする方法により達成される。
A6”シリコンウェーハ(該シリコンウェーハの前面上には電気的構造物が既に付着されており、窒化物保護層(パッシベーション)により保護されている)は、その約750μmの元の厚さを50μmに減少させるべく加工される。残りの厚さが50μmとなることにより、ウェーハはその固有の機械的安定性を喪失しかつ非常に脆くなる。この結果、ウェーハが破壊する危険性が高く、これを防止するため、ウェーハは、薄くなった状態でも、薄くされていないウェーハの機械的強度を実質的に有するように、基板により一時的に補強すべきである。この目的のため、基板が、ウェーハの前面、したがってウェーハの構造面に接着される。ウェーハの反対側の面は、ウェーハを薄くすべく研磨される。
1a 第1表面
3 中間層
3a 周方向の膨らみ
5 密封キャビティ
7 第2物品
7a 第2表面(分離層)
Claims (10)
- 第1表面(1a)と第2表面(7a)とを中間層(3)を介して接着する方法において、
a)第1表面(1a)を備えた第1物品(1)を用意する段階と、
b)中間層(3)のための、流動性を有する凝固可能な材料を用意する段階と、
c)第2表面(7a)を備えた第2物品(7)を用意する段階と、
d)第1表面(1a)を包囲する膨らみ(3a)が形成されるように、第1表面(1a)上に中間層(3)の材料を塗布する段階と、
e)第1物品(1)および第2物品(7)の周囲に真空を発生させる段階と、
f)密封キャビティ(5)が形成されるように、第2物品(7)の第2表面(7a)を周方向の膨らみ(3a)に接触させる段階と、
g)密封キャビティ(5)内へのガスの流入を生じさせることなく密封キャビティ(5)が消失されるように、第1物品(1)および第2物品(7)の周囲の圧力を、段階e)において付与した真空の圧力よりも増大させる段階と、
h)段階d)において塗布された中間層(3)の材料の粘度を高くする段階とを有することを特徴とする方法。 - 前記流動性を有する凝固可能な材料は、重合可能な材料であることを特徴とする請求項1記載の方法。
- 前記流動性を有する凝固可能な材料は、エラストマーを形成すべく凝固されることを特徴とする請求項1または2記載の方法。
- 前記第1物品(1)はウェーハまたはガラス板でありおよび/または第2物品(7)はウェーハであることを特徴とする請求項1乃至3のいずれか1項記載の方法。
- 前記段階f)において、接触を生じさせる力は重力であることを特徴とする請求項1乃至4のいずれか1項記載の方法。
- 前記段階f)において、適当ならば、第2物品の重量に加えて、100Nの最大力を膨らみ(3a)に加えることを特徴とする請求項1乃至5のいずれか1項記載の方法。
- 前記第2物品(7)は電子コンポーネンツを備えたウェーハであり、電子コンポーネンツは、第2表面(7a)を向いて配向されたウェーハの面上にあるか、この第2表面(7a)を形成することを特徴とする請求項1乃至6のいずれか1項記載の方法。
- 前記第2表面(7a)はパッシベーション層または分離層により形成されていることを特徴とする請求項7記載の方法。
- 前記分離層はプラズマ重合層であることを特徴とする請求項8記載の方法。
- 前記分離層は、中間層が硬化した後に、分離層が、ウェーハよりも中間層に対してより確実に接着するように構成されていることを特徴とする請求項8または9記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008044200.3 | 2008-11-28 | ||
DE102008044200A DE102008044200B4 (de) | 2008-11-28 | 2008-11-28 | Bonding-Verfahren |
PCT/EP2009/066058 WO2010061004A1 (de) | 2008-11-28 | 2009-11-30 | Bonding-verfahren |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012510715A JP2012510715A (ja) | 2012-05-10 |
JP5602145B2 true JP5602145B2 (ja) | 2014-10-08 |
Family
ID=41683547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011537998A Active JP5602145B2 (ja) | 2008-11-28 | 2009-11-30 | 接着方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US8641859B2 (ja) |
EP (1) | EP2370997B1 (ja) |
JP (1) | JP5602145B2 (ja) |
KR (1) | KR101643941B1 (ja) |
CN (1) | CN102265389B (ja) |
DE (1) | DE102008044200B4 (ja) |
SG (1) | SG171451A1 (ja) |
WO (1) | WO2010061004A1 (ja) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101180497B1 (ko) * | 2002-11-29 | 2012-09-06 | 안드레아스 야콥 | 중간층 및 지지층을 갖는 웨이퍼 및 웨이퍼를 처리하기위한 방법 및 장치 |
EP2695183A1 (de) | 2011-04-08 | 2014-02-12 | Ev Group E. Thallner GmbH | Verfahren zum permanenten bonden von wafern |
JP5901422B2 (ja) | 2012-05-15 | 2016-04-13 | 古河電気工業株式会社 | 半導体ウェハのダイシング方法およびこれに用いる半導体加工用ダイシングテープ |
SG2014009930A (en) * | 2012-07-24 | 2014-05-29 | Ev Group E Thallner Gmbh | Method and device for permanent bonding of wafers |
US9269623B2 (en) | 2012-10-25 | 2016-02-23 | Rohm And Haas Electronic Materials Llc | Ephemeral bonding |
DE102012111246A1 (de) * | 2012-11-21 | 2014-05-22 | Ev Group E. Thallner Gmbh | Vorrichtung und Verfahren zum Bonden |
US9315696B2 (en) | 2013-10-31 | 2016-04-19 | Dow Global Technologies Llc | Ephemeral bonding |
JP5607847B1 (ja) | 2013-11-29 | 2014-10-15 | 古河電気工業株式会社 | 半導体加工用粘着テープ |
WO2015132852A1 (ja) | 2014-03-03 | 2015-09-11 | 古河電気工業株式会社 | 半導体加工用粘着テープ |
WO2015190438A1 (ja) | 2014-06-10 | 2015-12-17 | 日産化学工業株式会社 | 仮接着剤を用いた積層体 |
DE102014219095A1 (de) | 2014-09-22 | 2016-03-24 | Nissan Chemical Industries, Ltd. | Wafer-Träger-Anordnung |
US9644118B2 (en) | 2015-03-03 | 2017-05-09 | Dow Global Technologies Llc | Method of releasably attaching a semiconductor substrate to a carrier |
KR102272726B1 (ko) | 2016-06-22 | 2021-07-05 | 닛산 가가쿠 가부시키가이샤 | 폴리디메틸실록산을 함유하는 접착제 |
WO2018130524A1 (en) * | 2017-01-11 | 2018-07-19 | Multimaterial-Welding Ag | Bonding objects together |
EP3636724A4 (en) | 2017-05-24 | 2021-01-27 | Nissan Chemical Corporation | TEMPORARY ADHESIVE INCLUDING AN EPOXY MODIFIED POLYSILOXANE |
WO2019009365A1 (ja) | 2017-07-06 | 2019-01-10 | 日産化学株式会社 | フェニル基含有ポリシロキサンを含有する仮接着剤 |
US20210130666A1 (en) | 2018-05-01 | 2021-05-06 | Nissan Chemical Corporation | Polysiloxane-containing temporary adhesive comprising heat-resistant polymerization inhibitor |
EP3882954A4 (en) | 2018-11-16 | 2022-07-27 | Nissan Chemical Corporation | LAMINATE REMOVAL METHOD, LAMINATE, AND LAMINATE PRODUCTION METHOD |
WO2020100966A1 (ja) | 2018-11-16 | 2020-05-22 | 日産化学株式会社 | 赤外線剥離用接着剤組成物、積層体、積層体の製造方法及び剥離方法 |
EP3888909A4 (en) | 2018-11-28 | 2022-08-24 | Nissan Chemical Corporation | ADHESIVE COMPOSITION, LAYERING PRODUCT AND METHOD OF MANUFACTURING A LAYERING PRODUCT AND METHOD OF THICKNESSING A SEMICONDUCTOR SUBSTRATE |
CN113716519B (zh) * | 2021-07-30 | 2023-12-19 | 苏州光舵微纳科技股份有限公司 | 一种硅片的临时键合方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8702493A (nl) * | 1986-10-31 | 1988-05-16 | Seiko Epson Corp | Optisch opnamemedium en werkwijze voor het vervaardigen daarvan. |
DE19715779A1 (de) * | 1997-04-16 | 1998-10-22 | Fairchild Technologies Gmbh Ge | Verfahren und Einrichtung zum Verkleben scheibenförmiger Kunststoffsubstrate |
DE10048881A1 (de) * | 2000-09-29 | 2002-03-07 | Infineon Technologies Ag | Vorrichtung und Verfahren zum planen Verbinden zweier Wafer für ein Dünnschleifen und ein Trennen eines Produkt-Wafers |
KR101180497B1 (ko) | 2002-11-29 | 2012-09-06 | 안드레아스 야콥 | 중간층 및 지지층을 갖는 웨이퍼 및 웨이퍼를 처리하기위한 방법 및 장치 |
JP4615202B2 (ja) * | 2003-09-30 | 2011-01-19 | 旭化成エンジニアリング株式会社 | 半導体薄膜の貼着方法及び装置 |
US7226812B2 (en) * | 2004-03-31 | 2007-06-05 | Intel Corporation | Wafer support and release in wafer processing |
JP4613709B2 (ja) | 2005-06-24 | 2011-01-19 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
DE102006000687B4 (de) * | 2006-01-03 | 2010-09-09 | Thallner, Erich, Dipl.-Ing. | Kombination aus einem Träger und einem Wafer, Vorrichtung zum Trennen der Kombination und Verfahren zur Handhabung eines Trägers und eines Wafers |
WO2007099146A1 (de) | 2006-03-01 | 2007-09-07 | Jakob + Richter Ip-Verwertungsgesellschaft Mbh | Verfahren zum bearbeiten insbesondere dünnen der rückseite eines wafers, wafer-träger-anordnung hierfür und verfahren zur herstellung einer solchen wafer-träger-anordnung |
JP4874766B2 (ja) * | 2006-11-07 | 2012-02-15 | 株式会社フジクラ | 半導体装置の製造方法 |
DE102006058493B4 (de) | 2006-12-12 | 2012-03-22 | Erich Thallner | Verfahren und Vorrichtung zum Bonden von Wafern |
JP2009130218A (ja) * | 2007-11-26 | 2009-06-11 | Tokyo Ohka Kogyo Co Ltd | 貼付装置および貼付方法 |
-
2008
- 2008-11-28 DE DE102008044200A patent/DE102008044200B4/de active Active
-
2009
- 2009-11-30 KR KR1020117014900A patent/KR101643941B1/ko active IP Right Grant
- 2009-11-30 SG SG2011039054A patent/SG171451A1/en unknown
- 2009-11-30 CN CN200980153096.2A patent/CN102265389B/zh active Active
- 2009-11-30 WO PCT/EP2009/066058 patent/WO2010061004A1/de active Application Filing
- 2009-11-30 US US13/131,756 patent/US8641859B2/en active Active
- 2009-11-30 JP JP2011537998A patent/JP5602145B2/ja active Active
- 2009-11-30 EP EP09760882.2A patent/EP2370997B1/de active Active
Also Published As
Publication number | Publication date |
---|---|
JP2012510715A (ja) | 2012-05-10 |
CN102265389A (zh) | 2011-11-30 |
KR20110102379A (ko) | 2011-09-16 |
EP2370997A1 (de) | 2011-10-05 |
DE102008044200A1 (de) | 2010-06-24 |
KR101643941B1 (ko) | 2016-07-29 |
WO2010061004A1 (de) | 2010-06-03 |
DE102008044200B4 (de) | 2012-08-23 |
SG171451A1 (en) | 2011-07-28 |
US8641859B2 (en) | 2014-02-04 |
EP2370997B1 (de) | 2016-02-24 |
US20110272092A1 (en) | 2011-11-10 |
CN102265389B (zh) | 2014-04-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5602145B2 (ja) | 接着方法 | |
JP5558531B2 (ja) | デバイスウェーハーをキャリヤー基板に逆に装着する方法 | |
KR101458143B1 (ko) | 처리방법, 특히, 웨이퍼의 얇은 배면 처리방법, 웨이퍼-캐리어 배열 및 상기 타입의 웨이퍼-캐리어 배열의 제조방법 | |
KR101239282B1 (ko) | 캐리어 기판으로부터 가역적으로 장착된 디바이스 웨이퍼를 제거하는 장치 및 방법 | |
KR102050541B1 (ko) | 초박막 웨이퍼의 임시 본딩을 위한 방법 및 장치 | |
JP6148532B2 (ja) | 貼付装置及び貼付方法 | |
US20200227301A1 (en) | Mounting of semiconductor-on-diamond wafers for device processing | |
US8652935B2 (en) | Void-free wafer bonding using channels | |
US20150194329A1 (en) | Overlapping device, and overlapping method | |
Abadie et al. | Application of temporary adherence to improve the manufacturing of 3D thin silicon wafers | |
KR20150003656A (ko) | 본딩된 웨이퍼 엣지 보호 설계 | |
TW201519329A (zh) | 電子元件之密封方法、電子元件封裝體之製造方法及密封片 | |
TWI626117B (zh) | 研磨墊及研磨方法 | |
Farrens et al. | Permanent Bonding with Polymers | |
Draisey et al. | Benefits of Live View of Bond Formation and Alignment for Adhesive Bonding Characterisation | |
Pamler et al. | Thin Wafer Support System for above 250° C Processing and Cold De‐Bonding | |
Niklaus | Adhesive wafer bonding, applications and trends | |
JP2011003926A (ja) | 薄膜形成方法及びシートフィルム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20121130 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131226 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140120 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140418 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140425 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140717 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140811 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140819 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5602145 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |