JP5596204B2 - エピタキシャル構造体及びその製造方法 - Google Patents
エピタキシャル構造体及びその製造方法 Download PDFInfo
- Publication number
- JP5596204B2 JP5596204B2 JP2013084647A JP2013084647A JP5596204B2 JP 5596204 B2 JP5596204 B2 JP 5596204B2 JP 2013084647 A JP2013084647 A JP 2013084647A JP 2013084647 A JP2013084647 A JP 2013084647A JP 5596204 B2 JP5596204 B2 JP 5596204B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- graphene
- substrate
- epitaxial
- heteroepitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 210
- 229910021389 graphene Inorganic materials 0.000 claims description 164
- 239000000758 substrate Substances 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 52
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 34
- 239000004408 titanium dioxide Substances 0.000 claims description 17
- 238000005520 cutting process Methods 0.000 claims description 7
- 230000001699 photocatalysis Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 199
- 239000002041 carbon nanotube Substances 0.000 description 36
- 229910021393 carbon nanotube Inorganic materials 0.000 description 36
- 239000013078 crystal Substances 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 31
- 239000002184 metal Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 24
- 239000002238 carbon nanotube film Substances 0.000 description 21
- 239000002356 single layer Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 14
- 239000000843 powder Substances 0.000 description 14
- 239000010936 titanium Substances 0.000 description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 13
- 239000003054 catalyst Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011800 void material Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000004299 exfoliation Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 238000000197 pyrolysis Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000009830 intercalation Methods 0.000 description 2
- 230000002687 intercalation Effects 0.000 description 2
- 238000002164 ion-beam lithography Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910010093 LiAlO Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000004924 electrostatic deposition Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/188—Preparation by epitaxial growth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/02444—Carbon, e.g. diamond-like carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02499—Monolayers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02642—Mask materials other than SiO2 or SiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
図1を参照すると、ヘテロエピタキシャル構造体10の製造方法は、結晶成長のための成長表面101を有する基板100を提供するステップ(S11)と、基板100の成長表面101に、パターン化されたグラフェン層102を配置するステップ(S12)と、基板100の成長表面101に、ヘテロエピタキシャル104を成長させるステップ(S13)と、を含む。
図12及び図13を参照すると、実施例2は、ヘテロエピタキシャル構造体20を提供する。本実施例のヘテロエピタキシャル構造体20は、基板200と、パターン化されたグラフェン層202と、ヘテロエピタキシャル層204と、を含む。ヘテロエピタキシャル構造体20の構造は、ヘテロエピタキシャル構造体10の構造と基本的に同じであるが、異なる点は、パターン化されたグラフェン層202が単層グラフェンからなることである。
図14を参照すると、実施例3は、ヘテロエピタキシャル構造体30を提供する。本実施例のヘテロエピタキシャル構造体30は、基板300と、パターン化されたグラフェン層302と、ヘテロエピタキシャル層304と、を含む。ヘテロエピタキシャル構造体30の構造は、ヘテロエピタキシャル構造体10の構造と基本的に同じであるが、異なる点は、パターン化されたグラフェン層302が分散のグラフェン粉末からなることである。
実施例4はホモエピタキシャル構造体(図示せず)を提供する。本実施例のホモエピタキシャル構造体は、基板と、パターン化されたグラフェン層と、エピタキシャル層と、を含む。ホモエピタキシャル構造体の構造は、ヘテロエピタキシャル構造体10の構造と基本的に同じであるが、異なる点は、基板の材料とエピタキシャル層の材料とは同じであることである。本実施例において、基板の材料及びエピタキシャル層の材料は、窒化ガリウム(GaN)である。
100、200、300 基板
101 成長表面
102、202、302 グラフェン層
103 キャビティ
104、204、304 ヘテロエピタキシャル層
1042 ヘテロエピタキシャル結晶粒
1044 ヘテロエピタキシャル膜
105 空隙
143 カーボンナノチューブセグメント
145 カーボンナノチューブ
Claims (3)
- 少なくとも一つのエピタキシャル成長表面を有する基板を提供する第一ステップと、
前記基板のエピタキシャル成長表面上にパターン化されたグラフェン層を配置し、前記グラフェン層によって、前記エピタキシャル成長表面が露出する部分と露出しない部分を有し、前記パターン化されたグラフェン層が10nm〜10μmのサイズの複数の空隙を有する第二ステップと、
前記エピタキシャル成長表面から、エピタキシャル層を成長させ、エピタキシャル構造体を得る第三ステップと、
を含むことを特徴とするエピタキシャル構造体の製造方法。 - 前記パターン化されたグラフェン層が、光触媒二酸化チタン切割法によりパターン化されたことを特徴とする、請求項1に記載のエピタキシャル構造体の製造方法。
- 基板と、パターン化されたグラフェン層と、エピタキシャル層と、を含むエピタキシャル構造体であって、
前記パターン化されたグラフェン層が10nm〜10μmのサイズの複数の空隙を有し、
前記基板は、少なくとも一つのエピタキシャル成長表面を有し、
前記エピタキシャル成長表面は、前記パターン化されたグラフェン層によって被覆された部分と被覆されていない部分とを有し、
前記エピタキシャル層は、前記エピタキシャル成長表面の前記パターン化されたグラフェン層によって被覆されていない部分を通じて、前記基板に接続されており、
前記パターン化されたグラフェン層は、前記基板と前記エピタキシャル層との間に設置されていることを特徴とするエピタキシャル構造体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210122618.6A CN103378224B (zh) | 2012-04-25 | 2012-04-25 | 外延结构的制备方法 |
CN201210122618.6 | 2012-04-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013229601A JP2013229601A (ja) | 2013-11-07 |
JP5596204B2 true JP5596204B2 (ja) | 2014-09-24 |
Family
ID=49463066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013084647A Active JP5596204B2 (ja) | 2012-04-25 | 2013-04-15 | エピタキシャル構造体及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8900977B2 (ja) |
JP (1) | JP5596204B2 (ja) |
CN (1) | CN103378224B (ja) |
TW (1) | TWI517434B (ja) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9024310B2 (en) * | 2011-01-12 | 2015-05-05 | Tsinghua University | Epitaxial structure |
US9601579B2 (en) * | 2013-05-24 | 2017-03-21 | The University Of North Carolina At Charlotte | Growth of semiconductors on hetero-substrates using graphene as an interfacial layer |
US10839975B2 (en) * | 2014-03-10 | 2020-11-17 | The Boeing Company | Graphene coated electronic components |
CN104944408B (zh) | 2014-03-31 | 2017-06-06 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
CN104944409B (zh) | 2014-03-31 | 2018-03-02 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
CN104944406B (zh) | 2014-03-31 | 2018-02-27 | 清华大学 | 碳纳米管结构的制备方法 |
CN104944407B (zh) | 2014-03-31 | 2017-06-06 | 清华大学 | 碳纳米管阵列的转移方法及碳纳米管结构的制备方法 |
CN104198380B (zh) * | 2014-09-17 | 2017-01-25 | 常州二维碳素科技股份有限公司 | 一种在线观测石墨烯晶界的设备及其观测方法 |
CN104498902B (zh) * | 2014-12-12 | 2016-10-19 | 中国科学院重庆绿色智能技术研究院 | 一种常压化学气相沉积石墨烯薄膜的制备方法 |
US9530643B2 (en) | 2015-03-12 | 2016-12-27 | International Business Machines Corporation | Selective epitaxy using epitaxy-prevention layers |
WO2016149934A1 (zh) * | 2015-03-26 | 2016-09-29 | 中国科学院上海微系统与信息技术研究所 | 石墨烯的生长方法 |
CN105731825B (zh) * | 2016-03-04 | 2018-10-26 | 北京大学 | 一种利用石墨烯玻璃低成本大面积制备氮化铝薄膜的方法 |
KR101921109B1 (ko) * | 2016-12-08 | 2018-11-23 | 한국생산기술연구원 | 라이브메탈 및 이의 제조방법 |
CN106856164A (zh) * | 2016-12-29 | 2017-06-16 | 苏州纳维科技有限公司 | 外延用图形化衬底及其制作方法 |
US10777562B1 (en) | 2019-03-14 | 2020-09-15 | Micron Technology, Inc. | Integrated circuity, DRAM circuitry, methods used in forming integrated circuitry, and methods used in forming DRAM circuitry |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3020154B2 (ja) * | 1998-06-12 | 2000-03-15 | 東京大学長 | ダイヤモンド多孔質体の製造方法 |
JP2003243316A (ja) * | 2002-02-20 | 2003-08-29 | Fuji Photo Film Co Ltd | 半導体素子用基板およびその製造方法 |
TWI343929B (en) * | 2007-03-27 | 2011-06-21 | Nat Univ Tsing Hua | Tio2-coated cnt, tio2-coated cnt reinforcing polymer composite and methods of preparation thereof |
KR100996800B1 (ko) * | 2008-10-20 | 2010-11-25 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
CN101503174B (zh) * | 2009-03-18 | 2011-01-05 | 北京大学 | 二氧化钛光催化切割石墨烯的方法 |
US8409366B2 (en) * | 2009-06-23 | 2013-04-02 | Oki Data Corporation | Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof |
JP4718652B2 (ja) * | 2009-10-21 | 2011-07-06 | パナソニック株式会社 | 太陽電池およびその製造方法 |
US8246860B2 (en) * | 2009-10-23 | 2012-08-21 | Tsinghua University | Carbon nanotube composite, method for making the same, and electrochemical capacitor using the same |
US8691441B2 (en) * | 2010-09-07 | 2014-04-08 | Nanotek Instruments, Inc. | Graphene-enhanced cathode materials for lithium batteries |
KR20120029276A (ko) * | 2010-09-16 | 2012-03-26 | 삼성엘이디 주식회사 | 질화물 단결정 제조 방법, 이를 이용한 질화물 반도체 발광 소자 및 그 제조 방법 |
KR101180176B1 (ko) | 2010-10-26 | 2012-09-05 | 주식회사 엘지실트론 | 화합물 반도체 장치 및 그 제조 방법 |
US20120141799A1 (en) * | 2010-12-03 | 2012-06-07 | Francis Kub | Film on Graphene on a Substrate and Method and Devices Therefor |
US8354296B2 (en) * | 2011-01-19 | 2013-01-15 | International Business Machines Corporation | Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same |
CN103374751B (zh) * | 2012-04-25 | 2016-06-15 | 清华大学 | 具有微构造的外延结构体的制备方法 |
CN103378223B (zh) * | 2012-04-25 | 2016-07-06 | 清华大学 | 外延结构体的制备方法 |
CN103377876B (zh) * | 2012-04-25 | 2016-12-14 | 清华大学 | 外延结构体的制备方法 |
-
2012
- 2012-04-25 CN CN201210122618.6A patent/CN103378224B/zh active Active
- 2012-05-04 TW TW101115885A patent/TWI517434B/zh active
- 2012-11-13 US US13/676,026 patent/US8900977B2/en active Active
-
2013
- 2013-04-15 JP JP2013084647A patent/JP5596204B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
TW201344950A (zh) | 2013-11-01 |
CN103378224A (zh) | 2013-10-30 |
JP2013229601A (ja) | 2013-11-07 |
US8900977B2 (en) | 2014-12-02 |
TWI517434B (zh) | 2016-01-11 |
US20130288457A1 (en) | 2013-10-31 |
CN103378224B (zh) | 2016-06-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5596204B2 (ja) | エピタキシャル構造体及びその製造方法 | |
TWI477666B (zh) | 具有微構造的外延結構體的製備方法 | |
TWI459589B (zh) | 外延結構體的製備方法 | |
US9231060B2 (en) | Eptaxial structure | |
TWI504017B (zh) | 外延結構 | |
TWI501420B (zh) | 發光二極體 | |
TWI458672B (zh) | 具有微構造的外延結構體 | |
JP5622890B2 (ja) | エピタキシャル構造体及びその製造方法 | |
TW201344970A (zh) | 發光二極體 | |
TWI477665B (zh) | 外延結構體的製備方法 | |
CN103378235B (zh) | 发光二极管 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20140326 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140331 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140619 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140707 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140806 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5596204 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |