JP5590879B2 - 発生素子及び半導体素子 - Google Patents

発生素子及び半導体素子 Download PDF

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Publication number
JP5590879B2
JP5590879B2 JP2009295444A JP2009295444A JP5590879B2 JP 5590879 B2 JP5590879 B2 JP 5590879B2 JP 2009295444 A JP2009295444 A JP 2009295444A JP 2009295444 A JP2009295444 A JP 2009295444A JP 5590879 B2 JP5590879 B2 JP 5590879B2
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Japan
Prior art keywords
layer
electrical contact
light emitting
light
substrate
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Expired - Fee Related
Application number
JP2009295444A
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English (en)
Japanese (ja)
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JP2011135007A (ja
JP2011135007A5 (enExample
Inventor
泰史 小山
亮太 関口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2009295444A priority Critical patent/JP5590879B2/ja
Priority to US12/954,507 priority patent/US8436382B2/en
Publication of JP2011135007A publication Critical patent/JP2011135007A/ja
Publication of JP2011135007A5 publication Critical patent/JP2011135007A5/ja
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Publication of JP5590879B2 publication Critical patent/JP5590879B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H10D8/755—Resonant tunneling diodes [RTD]

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2009295444A 2009-12-25 2009-12-25 発生素子及び半導体素子 Expired - Fee Related JP5590879B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009295444A JP5590879B2 (ja) 2009-12-25 2009-12-25 発生素子及び半導体素子
US12/954,507 US8436382B2 (en) 2009-12-25 2010-11-24 Oscillation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009295444A JP5590879B2 (ja) 2009-12-25 2009-12-25 発生素子及び半導体素子

Publications (3)

Publication Number Publication Date
JP2011135007A JP2011135007A (ja) 2011-07-07
JP2011135007A5 JP2011135007A5 (enExample) 2013-02-14
JP5590879B2 true JP5590879B2 (ja) 2014-09-17

Family

ID=44186310

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009295444A Expired - Fee Related JP5590879B2 (ja) 2009-12-25 2009-12-25 発生素子及び半導体素子

Country Status (2)

Country Link
US (1) US8436382B2 (enExample)
JP (1) JP5590879B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829592B2 (en) * 2010-12-14 2014-09-09 Intel Corporation Non-volatile storage element having dual work-function electrodes
JP2014158254A (ja) * 2013-01-16 2014-08-28 Canon Inc 電磁波発生素子及び検出素子
US9899959B2 (en) * 2015-05-22 2018-02-20 Canon Kabushiki Kaisha Element, and oscillator and information acquiring device including the element
JP7262959B2 (ja) * 2018-10-04 2023-04-24 キヤノン株式会社 半導体素子、半導体素子の製造方法
US20210280763A1 (en) * 2019-12-23 2021-09-09 Microsoft Technology Licensing, Llc Superconductor heterostructures for semiconductor-superconductor hybrid structures
JP7496111B2 (ja) * 2019-12-24 2024-06-06 国立大学法人東京工業大学 サブキャリア変調方式テラヘルツレーダー
EP4470113A4 (en) * 2022-02-23 2025-11-12 Univ Nat Tsing Hua TERAHERTZ TRANSCEIVER AND ITS MANUFACTURING PROCESS

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0138851B1 (ko) * 1994-10-24 1998-04-27 양승택 광제어 공명투과 진동자 및 그의 제조방법
US6395409B2 (en) * 1997-09-29 2002-05-28 Minolta Co., Ltd. Organic electroluminescent element
JP5196750B2 (ja) * 2006-08-25 2013-05-15 キヤノン株式会社 発振素子

Also Published As

Publication number Publication date
JP2011135007A (ja) 2011-07-07
US20110155998A1 (en) 2011-06-30
US8436382B2 (en) 2013-05-07

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