JP2011135007A5 - - Google Patents

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Publication number
JP2011135007A5
JP2011135007A5 JP2009295444A JP2009295444A JP2011135007A5 JP 2011135007 A5 JP2011135007 A5 JP 2011135007A5 JP 2009295444 A JP2009295444 A JP 2009295444A JP 2009295444 A JP2009295444 A JP 2009295444A JP 2011135007 A5 JP2011135007 A5 JP 2011135007A5
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JP
Japan
Prior art keywords
layer
electrical contact
light emitting
substrate
light
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Application number
JP2009295444A
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English (en)
Japanese (ja)
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JP2011135007A (ja
JP5590879B2 (ja
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Priority to JP2009295444A priority Critical patent/JP5590879B2/ja
Priority claimed from JP2009295444A external-priority patent/JP5590879B2/ja
Priority to US12/954,507 priority patent/US8436382B2/en
Publication of JP2011135007A publication Critical patent/JP2011135007A/ja
Publication of JP2011135007A5 publication Critical patent/JP2011135007A5/ja
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Publication of JP5590879B2 publication Critical patent/JP5590879B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009295444A 2009-12-25 2009-12-25 発生素子及び半導体素子 Expired - Fee Related JP5590879B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009295444A JP5590879B2 (ja) 2009-12-25 2009-12-25 発生素子及び半導体素子
US12/954,507 US8436382B2 (en) 2009-12-25 2010-11-24 Oscillation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009295444A JP5590879B2 (ja) 2009-12-25 2009-12-25 発生素子及び半導体素子

Publications (3)

Publication Number Publication Date
JP2011135007A JP2011135007A (ja) 2011-07-07
JP2011135007A5 true JP2011135007A5 (enExample) 2013-02-14
JP5590879B2 JP5590879B2 (ja) 2014-09-17

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Family Applications (1)

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JP2009295444A Expired - Fee Related JP5590879B2 (ja) 2009-12-25 2009-12-25 発生素子及び半導体素子

Country Status (2)

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US (1) US8436382B2 (enExample)
JP (1) JP5590879B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829592B2 (en) * 2010-12-14 2014-09-09 Intel Corporation Non-volatile storage element having dual work-function electrodes
JP2014158254A (ja) * 2013-01-16 2014-08-28 Canon Inc 電磁波発生素子及び検出素子
US9899959B2 (en) * 2015-05-22 2018-02-20 Canon Kabushiki Kaisha Element, and oscillator and information acquiring device including the element
JP7262959B2 (ja) * 2018-10-04 2023-04-24 キヤノン株式会社 半導体素子、半導体素子の製造方法
US20210280763A1 (en) * 2019-12-23 2021-09-09 Microsoft Technology Licensing, Llc Superconductor heterostructures for semiconductor-superconductor hybrid structures
JP7496111B2 (ja) * 2019-12-24 2024-06-06 国立大学法人東京工業大学 サブキャリア変調方式テラヘルツレーダー
EP4470113A4 (en) * 2022-02-23 2025-11-12 Univ Nat Tsing Hua TERAHERTZ TRANSCEIVER AND ITS MANUFACTURING PROCESS

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0138851B1 (ko) * 1994-10-24 1998-04-27 양승택 광제어 공명투과 진동자 및 그의 제조방법
US6395409B2 (en) * 1997-09-29 2002-05-28 Minolta Co., Ltd. Organic electroluminescent element
JP5196750B2 (ja) * 2006-08-25 2013-05-15 キヤノン株式会社 発振素子

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