JP5582800B2 - Liquid crystal display device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a liquid crystal display device and a manufacturing method thereof.

  It is known that a VA (Vertical Alignment) type liquid crystal display device is driven by a multi-domain method in order to improve viewing angle characteristics (see Patent Document 1). In one pixel, it is known to divide a pixel electrode into a main pixel electrode and a sub-pixel electrode and apply different voltages to each. The voltage of the subpixel electrode is given by dividing the accumulated charge by the data signal applied to the main pixel electrode.

JP 2006-330201 A

  In the conventional structure, in order to form a storage capacitor for the main pixel electrode, a storage capacitor for the sub-pixel electrode, and a split capacitor for dividing the charge, in addition to the transparent pixel electrode, two layers of opaque The electrodes were stacked. Therefore, since a total of three layers of electrodes were formed, light transmittance loss occurred. Conventionally, since the capacitor electrode facing the pixel electrode has been formed from an opaque material, a light transmittance loss has also occurred in this respect.

  An object of the present invention is to reduce light transmittance loss.

  (1) The liquid crystal display device according to the present invention includes an insulating layer, a pixel electrode disposed on the insulating layer, a capacitor electrode disposed to face the pixel electrode under the insulating layer, and the insulating A main electrode to which a data signal is input, the counter electrode facing the pixel electrode, and a liquid crystal disposed between the pixel electrode and the counter electrode on a side opposite to the layer An electrode and a sub-pixel electrode separated from the main pixel electrode, and the capacitor electrode is opposed to the main pixel electrode and electrically connected to a common potential, and the sub-pixel electrode A sub-capacitance electrode electrically connected to the common potential opposite to the sub-pixel electrode, and a divided capacitance electrode facing the sub-pixel electrode, penetrating the insulating layer and electrically connected to the main pixel electrode, Each of the pixel electrode and the capacitor electrode is a transparent conductive material. Characterized in that it comprises. According to the present invention, since the pixel electrode and the capacitor electrode are formed in one layer (two layers in total), the light transmittance loss can be reduced, and the pixel electrode, the capacitor electrode, and the divided capacitor electrode are each transparent. By comprising the conductive material, the light transmittance loss can be further reduced.

  (2) In the liquid crystal display device described in (1), the liquid crystal display device further includes a common wiring electrically connected to the common potential, and the main capacitor electrode is completely within the projection region of the main pixel electrode. The sub-capacitor electrode has a shape that fits completely within the projection area of the sub-pixel electrode, and the common wiring is made of an opaque conductive material and overlaps the main capacitor electrode and the sub-capacitor electrode. And may be electrically connected.

  (3) In the liquid crystal display device according to (2), the divided capacitor electrode is continuously and integrally formed from a first portion facing the subpixel electrode to a second portion facing the main pixel electrode, A pad portion formed of the opaque conductive material so as to overlap and electrically connect to the second portion, wherein the divided capacitor electrode is electrically connected to the main pixel electrode at the pad portion; This may be a feature.

  (4) The method for manufacturing a liquid crystal display device according to the present invention includes a first transparent electrode film having a shape including a combination of the first slit and the capacitor electrode for patterning into the shape of the capacitor electrode having the first slit. A step of forming an insulating layer on the first transparent electrode film, and a second transparent electrode film for patterning into a shape of a pixel electrode having a second slit overlapping the first slit, A step of forming on the insulating layer; a first mask portion located above the region to be the pixel electrode; and a second mask portion thinner than the first mask portion, the first slit and the second An etching resist in which a through hole is formed above a region for forming a slit is formed on the second transparent electrode film, and the etching resist is passed through the through hole. Etching the second transparent electrode film and the insulating layer to be formed, forming the second slit in the second transparent electrode film, and exposing the first transparent electrode film in the second slit; The second resist mask is removed by thinning the etching resist so as to leave the first mask, and the second transparent electrode film is exposed from the etching resist outside the region to be the pixel electrode. And etching the second transparent electrode film through the remaining first mask portion to form the pixel electrode, and etching the first transparent electrode film exposed from the through hole. Forming the first slit. According to the present invention, since both the pixel electrode and the capacitor electrode are formed from the transparent electrode film, the light transmittance loss can be reduced. In addition, the capacitor electrode having the slit can be easily formed so as not to protrude from the pixel electrode.

  (5) In the method for manufacturing a liquid crystal display device according to (4), in the step of etching the second transparent electrode film and the insulating layer, etching of the second transparent electrode film and etching of the insulating layer are performed. It is good also as performing separately.

  (6) In the method of manufacturing a liquid crystal display device according to (5), the etching of the second transparent electrode film and the first transparent electrode film is wet etching, and the etching of the insulating layer is dry etching. It may be characterized by being.

  (7) In the method for manufacturing a liquid crystal display device according to any one of (4) to (6), a step of forming a thin film transistor having a gate electrode, a gate insulating film, a semiconductor layer, a drain electrode, and a source electrode. In addition, the gate insulating film may be formed on the first transparent electrode film and the gate electrode after forming the first transparent electrode film and the gate electrode.

  (8) In the method for manufacturing a liquid crystal display device according to any one of (4) to (6), a step of forming a thin film transistor having a gate electrode, a gate insulating film, a semiconductor layer, a drain electrode, and a source electrode. In addition, the first transparent electrode film may be formed on the gate insulating film after forming the gate electrode and the gate insulating film.

  (9) The liquid crystal display device according to the present invention includes an insulating layer, a pixel electrode disposed on the insulating layer, a capacitor electrode disposed to face the pixel electrode under the insulating layer, and the insulating A counter electrode facing the pixel electrode on the opposite side of the layer, and a liquid crystal disposed between the pixel electrode and the counter electrode, wherein the pixel electrode has a plurality of slits formed thereon, The capacitor electrode is formed so as not to protrude into a projection region of the plurality of slits, and the pixel electrode and the capacitor electrode are made of a transparent conductive material. According to the present invention, since both the pixel electrode and the capacitor electrode are formed of a transparent conductive material, the light transmittance loss can be reduced. In addition, since the capacitor electrode does not protrude from the pixel electrode, an appropriate electric field can be applied to the liquid crystal.

1 is an exploded perspective view showing a part of a liquid crystal display device according to a first embodiment of the present invention. It is the top view to which 1 pixel of the liquid crystal display panel was expanded. It is the III-III sectional view taken on the line of the structure shown in FIG. It is the IV-IV sectional view taken on the line of the structure shown in FIG. It is a figure which shows the structure below an insulating layer. It is a figure which shows the equivalent circuit of 1 pixel. It is the top view to which 1 pixel of the liquid crystal display device which concerns on 2nd Embodiment of this invention was expanded. It is sectional drawing which shows a part by the side of the 1st board | substrate side of the liquid crystal display device which concerns on 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is a figure explaining the manufacturing method of the liquid crystal display device which concerns on the 2nd Embodiment of this invention. It is sectional drawing which shows a part by the side of the 1st board | substrate side of the liquid crystal display device which concerns on the modification of 2nd Embodiment of this invention.

  Embodiments of the present invention will be described below with reference to the drawings.

[First Embodiment]
FIG. 1 is an exploded perspective view showing a liquid crystal display device according to the first embodiment of the present invention. The liquid crystal display device includes a liquid crystal display panel 10. The liquid crystal display panel 10 is supported between the upper frame 12 and the lower frame 14. The liquid crystal display panel 10 displays an image with a plurality of pixels.

  FIG. 2 is an enlarged plan view of one pixel of the liquid crystal display panel 10. 3 is a cross-sectional view taken along line III-III of the structure shown in FIG. 4 is a cross-sectional view taken along line IV-IV of the structure shown in FIG.

  The liquid crystal display panel 10 includes a first substrate 16 and a second substrate 18. Each of the first substrate 16 and the second substrate 18 is, for example, a glass substrate and has light transmittance. A liquid crystal 20 is disposed between the first substrate 16 and the second substrate 18. A first alignment film 22 and a second alignment film 24 are disposed on the first substrate 16 side and the second substrate 18 side so as to sandwich the liquid crystal 20.

  A gate electrode 26 is formed on the first substrate 16 (see FIGS. 2 and 4). A gate insulating film 28 is formed on the gate electrode 26. A semiconductor layer (not shown) is formed on the gate insulating film 28, and a drain electrode 30 and a source electrode 32 are formed on the semiconductor layer (see FIG. 2). Thus, the thin film transistor 34 is configured. For example, the data signal D (see FIG. 6) corresponding to the image displayed on the liquid crystal display panel 10 is input to the drain electrode 30.

  As shown in FIGS. 3 and 4, the pixel electrode 36 is disposed on the first alignment film 22 on the first substrate 16 side. A data signal D (see FIG. 6) is input to the pixel electrode 36. For example, the source electrode 32 is electrically connected to the pixel electrode 36, and the data signal D input to the drain electrode 30 is input to the pixel electrode 36 through the source electrode 32 under the control of the thin film transistor 34.

  As shown in FIGS. 3 and 4, the counter electrode 38 is disposed on the second alignment film 24 on the second substrate 18 side. The counter electrode 38 is made of a transparent conductive material (for example, ITO (Indium Tin Oxide)). The counter electrode 38 is connected to a reference potential Vref (see FIG. 6) such as GND. The liquid crystal 20 is disposed between the pixel electrode 36 and the counter electrode 38, and the liquid crystal 20 is driven by a voltage applied between the two. The driving method is a VA (Vertical Alignment) method. A color filter layer 40 and an overcoat layer 42 are stacked on the second substrate 18, and a counter electrode 38 is disposed on the overcoat layer 42.

  The pixel electrode 36 is made of a transparent conductive material (for example, ITO (Indium Tin Oxide)). The pixel electrode 36 includes a main pixel electrode 35 to which a data signal D (see FIG. 6) is input, and a sub-pixel electrode 37 separated from the main pixel electrode 35 (see FIG. 2). Different voltages appear on the main pixel electrode 35 and the subpixel electrode 37 (details will be described later). Thus, one pixel is divided into a plurality of regions (domains) for driving the liquid crystal 20 with different voltages. That is, the liquid crystal display panel 10 is driven by a multi-domain method.

  As shown in FIGS. 3 and 4, an insulating layer 44 is disposed under the pixel electrode 36 (on the side opposite to the liquid crystal 20). That is, the pixel electrode 36 is disposed on the insulating layer 44 (the liquid crystal 20 side). The insulating layer 44 includes a gate insulating film 28 and an insulating film 46 that covers the source electrode 32 and the drain electrode 30.

  FIG. 5 is a diagram showing a structure below the insulating layer 44. A capacitor electrode 48 is disposed so as to face the pixel electrode 36 under the insulating layer 44 (on the side opposite to the liquid crystal 20). The capacitor electrode 48 is made of a transparent conductive material (for example, ITO (Indium Tin Oxide)). A storage capacitor is formed by interposing the insulating layer 44 between the pixel electrode 36 and the capacitor electrode 48. By forming the storage capacitor, charges corresponding to the data signal D (see FIG. 6) can be held, and the application time of the voltage to the liquid crystal 20 can be ensured for a long time.

  The capacitance electrode 48 includes a main capacitance electrode 50 that faces the main pixel electrode 35 and is electrically connected to a common potential Vcom (see FIG. 6). As shown in FIG. 2, the main capacitor electrode 50 has a shape that fits completely within the projection area of the main pixel electrode 35. A main storage capacitor Cmain (see FIG. 6) is formed by the insulating layer 44 and the main pixel electrode 35 and the main capacitor electrode 50 sandwiching the insulating layer 44. A voltage corresponding to the main storage capacitor Cmain appears at the main pixel electrode 35.

  The capacitor electrode 48 includes a sub-capacitance electrode 52 facing the sub-pixel electrode 37 and electrically connected to the common potential Vcom (see FIG. 6). As shown in FIG. 2, the sub-capacitance electrode 52 has a shape that completely fits within the projection area of the sub-pixel electrode 37. A sub-storage capacitor Csub (see FIG. 6) is formed by the insulating layer 44 and the sub-pixel electrode 37 and the sub-capacitor electrode 52 sandwiching the insulating layer 44. A voltage corresponding to the sub storage capacitor Csub appears on the subpixel electrode 37.

  The capacitor electrode 48 includes a divided capacitor electrode 54. As shown in FIG. 2, the divided capacitor electrode 54 faces the subpixel electrode 37. A divided capacitor Cdiv (see FIG. 6) is formed by the insulating layer 44 and the sub-pixel electrode 37 and the divided capacitor electrode 54 sandwiching the insulating layer 44. The divided capacitor electrode 54 is continuously and integrally formed from the first portion 56 facing the subpixel electrode 37 to the second portion 58 facing the main pixel electrode 35. A pad portion 60 is formed on the second portion 58. The pad portion 60 is made of an opaque conductive material. The pad portion 60 overlaps the second portion 58 and is electrically connected.

  As shown in FIG. 4, the divided capacitor electrode 54 is electrically connected to the main pixel electrode 35 at the pad portion 60. The divided capacitor electrode 54 penetrates the insulating layer 44 and is electrically connected to the main pixel electrode 35. A part of the main pixel electrode 35 enters the through hole of the insulating layer 44 and is in contact with the second portion 58 of the pad portion 60. By electrically connecting to the main pixel electrode 35, the divided capacitor electrode 54 has the same potential as the main pixel electrode 35.

  Capacitance electrodes 48 (main capacitance electrode 50, sub-capacitance electrode 52, and divided capacitance electrode 54) made of a transparent conductive material are disposed at the same layer position (on the first substrate 16).

  As shown in FIGS. 2 and 4, the liquid crystal display device has a common wiring 62 electrically connected to a common potential Vcom (see FIG. 6). The common wiring 62 is made of an opaque conductive material and overlaps the main capacitor electrode 50 and the sub capacitor electrode 52 and is electrically connected thereto. Similarly, a pad portion 60 and a gate electrode 26 made of an opaque material are disposed at the same layer position as the common wiring 62. A transparent conductive material film 49 made of the same material as that of the capacitor electrode 48 is present under the gate electrode 26 (see FIG. 4).

  FIG. 6 is a diagram showing an equivalent circuit of one pixel. When the thin film transistor 34 is turned on, the data signal D is input to the main pixel electrode 35 via the drain electrode 30 and the source electrode 32. A main storage capacitor Cmain is formed between the main capacitor electrode 50 and the main pixel electrode 35 connected to the common potential Vcom. At the same time, since the divided capacitor electrode 54 is electrically connected to the main pixel electrode 35, a part of the charge of the main pixel electrode 35 flows into the divided capacitor electrode 54, and between the divided capacitor electrode 54 and the sub-pixel electrode 37. A split capacitor Cdiv is formed. Charges appear in the sub-pixel electrode 37 corresponding to the charges of the divided capacitor Cdiv and the divided capacitor electrode 54. A sub-storage capacitor Csub is formed between the sub-capacitance electrode 52 and the sub-pixel electrode 37 connected to the common potential Vcom. In this way, a voltage is applied to the liquid crystal 20 disposed between the main pixel electrode 35 having a storage capacitor, the sub-pixel electrode 37 having a storage capacitor, and the counter electrode 38.

  According to this embodiment, since the pixel electrode 36 and the capacitor electrode 48 are formed by one layer (two layers in total), the light transmittance loss can be reduced. Further, the pixel electrode 36, the capacitor electrode 48, and the divided capacitor electrode 54 are each made of a transparent conductive material, whereby the light transmittance loss can be further reduced.

[Second Embodiment]
The liquid crystal display device according to the second embodiment of the present invention includes the liquid crystal display panel 10, the upper frame 12, and the lower frame 14, and is configured to display an image with a plurality of pixels. It is the same as that of embodiment (refer FIG. 1). Further, the liquid crystal display device according to this embodiment includes the second substrate 18, the color filter layer 40, the overcoat layer 42, the counter electrode 38, the second alignment film 24, the liquid crystal 20, and the first alignment film 22 shown in FIG. 3. It is the same as that of 1st Embodiment also in the point which has.

  FIG. 7A is an enlarged plan view of one pixel of the liquid crystal display device according to the second embodiment of the present invention. FIG. 7B is a cross-sectional view showing a part of the liquid crystal display device according to the second embodiment of the present invention on the first substrate side (cross section taken along line VIIB-VIIB in FIG. 7A).

  The liquid crystal display device includes a first substrate 110. The first substrate 110 is, for example, a glass substrate and has light transmittance. A capacitor electrode 112 is formed on the first substrate 110. The capacitor electrode 112 is made of a transparent conductive material (for example, Indium Zinc Oxide or ITZO (Indium Tin Zinc Oxide)). A plurality of first slits 114 are formed in the capacitor electrode 112. A gate electrode 116 is formed on the first substrate 110. The gate electrode 116 is made of an opaque conductive material. There is a transparent conductive material film 118 between the gate electrode 116 and the first substrate 110. The transparent conductive material film 118 is in the same layer position as the capacitor electrode 112.

  A gate insulating film 120 is formed on the gate electrode 116. The gate insulating film 120 is made of a transparent insulating material. A semiconductor layer 122 is formed over the gate insulating film 120, and a drain electrode 124 and a source electrode 126 are formed so as to partially rest on the semiconductor layer 122. A passivation film 128 is formed on the underlying gate insulating film 120 so as to cover the drain electrode 124 and the source electrode 126. The passivation film 128 is made of a transparent insulating material.

  A pixel electrode 130 is formed on the passivation film 128. The pixel electrode 130 is electrically connected to the source electrode 126. The liquid crystal 20 is disposed between the pixel electrode 130 and the counter electrode 38 shown in FIG. As shown in FIG. 7A, the pixel electrode 130 has a plurality of second slits 132 formed therein. In this embodiment, PSA (Polymer-Sustained. Alignment) is applied to incline the molecules of the liquid crystal 20 in the direction in which the second slit 132 extends.

  The pixel electrode 130 faces the capacitor electrode 112. An insulating layer 134 is interposed between the pixel electrode 130 and the capacitor electrode 112. The insulating layer 134 includes a gate insulating film 120 and a passivation film 128. The capacitive electrode 112 is formed so as not to protrude into the projection area of the plurality of second slits 132. The pixel electrode 130 and the capacitor electrode 112 are made of a transparent conductive material. A storage capacitor is formed by the insulating layer 134 and the pixel electrode 130 and the capacitor electrode 112 sandwiching the insulating layer 134. By forming the storage capacitor, charges corresponding to the data signal can be held, and the voltage application time to the liquid crystal 20 can be ensured for a long time.

  According to this embodiment, since both the pixel electrode 130 and the capacitor electrode 112 are formed of a transparent conductive material, the light transmittance loss can be reduced. In addition, since the capacitor electrode 112 does not protrude from the pixel electrode 130, an appropriate electric field can be applied to the liquid crystal.

  Next, FIGS. 8A to 12B are views for explaining a method of manufacturing the liquid crystal display device according to the present embodiment. In these drawings, drawings having the same figure number indicate the same process, a drawing ending with A is a plan view, and a drawing ending with B is a cross-sectional view.

  As shown in FIGS. 8A and 8B, a first transparent electrode film 136 is formed on the first substrate 110. The first transparent electrode film 136 is made of an amorphous material that does not crystallize in a high temperature environment (for example, about 330 degrees). For example, an amorphous material containing zinc or the like, specifically, Indium Zinc Oxide or ITZO (Indium Tin Zinc Oxide). As will be described in detail later, since the temperature becomes high when the gate insulating film or the passivation film formed on the first transparent electrode film 136 is formed by etching, crystallization occurs in ITO, and the first transparent electrode film is formed. This is because a problem that etching cannot be performed when the electrode film 136 is processed is expected.

  The first transparent electrode film 136 is for patterning into the shape of the capacitor electrode 112 having the first slit 114 shown in FIGS. 7A and 7B. The first transparent electrode film 136 has a shape including a combination of the first slit 114 and the capacitor electrode 112. The first transparent electrode film 136 is formed by etching a film made of a transparent conductive material.

  In addition, a gate electrode 116 of the thin film transistor is formed. The gate electrode 116 is formed by etching a film made of an opaque conductive material. Specifically, a film made of a transparent conductive material and a film made of an opaque conductive material are stacked and formed on the first substrate 110, and these are etched so as to have a combined shape of the gate electrode 116 and the first transparent electrode film 136. . Thereafter, the film made of an opaque conductive material is removed from the first transparent electrode film 136. Through such a process, the transparent conductive material film 118 remains under the gate electrode 116.

  A gate insulating film 120 is formed over the gate electrode 116. The gate insulating film 120 is formed so as to cover the first transparent electrode film 136. That is, after forming the first transparent electrode film 136 and the gate electrode 116, the gate insulating film 120 is formed on the first transparent electrode film 136 and the gate electrode 116. A semiconductor layer 122 is formed over the gate insulating film 120. A source electrode 126 and a drain electrode 124 are formed on the gate insulating film 120 so as to partially rest on the semiconductor layer 122. Thus, a thin film transistor including the gate electrode 116, the gate insulating film 120, the semiconductor layer 122, the drain electrode 124, and the source electrode 126 is formed.

  As illustrated in FIGS. 9A and 9B, a passivation film 128 is formed over the gate insulating film 120 so as to cover the source electrode 126, the drain electrode 124, and the semiconductor layer 122. An insulating layer 134 is constituted by the gate insulating film 120 and the passivation film 128. That is, the insulating layer 134 is formed on the first transparent electrode film 136.

  A second transparent electrode film 138 is formed on the insulating layer 134. The second transparent electrode film 138 is made of, for example, ITO (Indium Tin Oxide). The second transparent electrode film 138 is for patterning into the shape of the pixel electrode 130 having the second slits 132 that overlap the first slits 114 as shown in FIGS. 7A and 7B. Further, the second transparent electrode film 138 is formed so as to be electrically connected to the source electrode 126 through the through hole of the passivation film 128.

  Then, an etching resist 140 is formed on the second transparent electrode film 138. The etching resist 140 has a first mask portion 142 located above the region of the second transparent electrode film 138 that is used as the pixel electrode 130. The etching resist 140 has a second mask portion 144 positioned above a region to be removed by etching the second transparent electrode film 138. The second mask portion 144 is thinner than the first mask portion 142. In the etching resist 140, a through hole 146 is formed above a region for forming the first slit 114 and the second slit 132. The through hole 146 is formed so as to be surrounded by the first mask portion 142 and the second mask portion 144.

  As shown in FIGS. 10A and 10B, the second transparent electrode film 138 and the insulating layer 134 exposed from the through hole 146 are etched through the etching resist 140. As a result, the second slit 132 is formed in the second transparent electrode film 138, and the first transparent electrode film 136 is exposed in the second slit 132.

  In the step of etching the second transparent electrode film 138 and the insulating layer 134, the etching of the second transparent electrode film 138 and the etching of the insulating layer 134 are performed separately. The etching of the second transparent electrode film 138 is wet etching. The etching of the insulating layer 134 is dry etching.

  As shown in FIGS. 11A and 11B, the second mask portion 144 is removed by thinning the etching resist 140 so that the first mask portion 142 remains. As a result, the second transparent electrode film 138 is exposed from the etching resist 140 outside the region to be the pixel electrode 130. Since the second mask portion 144 is removed, the through hole 146 is not part of the portion surrounding the through hole 146, and thus becomes a notch (slit) formed in the first mask portion 142.

  As shown in FIGS. 12A and 12B, the pixel electrode 130 is formed by etching the second transparent electrode film 138 through the remaining first mask portion 142. At the same time, the first transparent electrode film 136 exposed from the through hole 146 is etched to form the first slit 114. Thereby, the capacitor electrode 112 is formed. The etching of the first transparent electrode film 136 is wet etching. Then, the etching resist 140 is removed.

  According to the present embodiment, since both the pixel electrode 130 and the capacitor electrode 112 are formed from the transparent electrode film, the light transmittance loss can be reduced. In addition, the capacitor electrode 112 having the first slit 114 can be easily formed so as not to protrude from the second slit 132 of the pixel electrode 130.

[Modification]
FIG. 13 is a cross-sectional view showing a part on the first substrate side of a liquid crystal display device according to a modification of the second embodiment of the present invention. In this example, after forming the gate electrode 216 and the gate insulating film 220, the first transparent electrode film 236 is formed on the gate insulating film 220. The first transparent electrode film 236 is etched to form the capacitive electrode 212. The other configurations and manufacturing methods correspond to those described in the above embodiment. Also in this modification, the same effect as the said embodiment can be achieved.

  In the second embodiment, the first transparent electrode film 236 is made of Indium Zinc Oxide or ITZO (Indium Tin Zinc Oxide). However, ITO (Indium Tin Oxide) can be used for the first transparent electrode film 236 under the following conditions.

  (1) An etchant (strong acid) that can etch the ITO of the crystallized first transparent electrode film 236 is used.

  (2) As shown in FIG. 13, the first transparent electrode film 236 is placed on the gate insulating film 220 so that the first transparent electrode film 236 can be formed after the semiconductor layer 122 is formed, thereby reducing crystallization. .

  (3) In addition to the above (2), the passivation film 128 is also changed to a low temperature film formation process to prevent the first transparent electrode film 236 from being crystallized.

  The present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the configuration described in the embodiment can be replaced with substantially the same configuration, a configuration that exhibits the same operational effects, or a configuration that can achieve the same purpose.

  10 liquid crystal display panel, 12 upper frame, 14 lower frame, 16 first substrate, 18 second substrate, 20 liquid crystal, 22 first alignment film, 24 second alignment film, 26 gate electrode, 28 gate insulating film, 30 drain electrode , 32 Source electrode, 34 Thin film transistor, 35 Main pixel electrode, 36 Pixel electrode, 37 Subpixel electrode, 38 Counter electrode, 40 Color filter layer, 42 Overcoat layer, 44 Insulating layer, 46 Insulating film, 48 Capacitance electrode, 49 Transparent Conductive material film, 50 main capacitance electrode, 52 sub capacitance electrode, 54 divided capacitance electrode, 56 first portion, 58 second portion, 60 pad portion, 62 common wiring, 110 first substrate, 112 capacitance electrode, 114 first slit 116 gate electrode 118 transparent conductive material film 120 gate insulating film 122 semiconductor layer 124 gate Rain electrode, 126 source electrode, 128 passivation film, 130 pixel electrode, 132 second slit, 134 insulating layer, 136 first transparent electrode film, 138 second transparent electrode film, 140 etching resist, 142 first mask part, 144 first 2 mask portion, 146 through-hole, 216 gate electrode, 220 gate insulating film, 236 first transparent electrode film, D data signal, Vcom common potential, Cdiv division capacitor, Cmain main storage capacitor, Csub sub-storage capacitor, Vref reference potential.

Claims (3)

An insulating layer;
A pixel electrode disposed on the insulating layer;
A capacitive electrode disposed to face the pixel electrode under the insulating layer;
A counter electrode opposite to the insulating layer and facing the pixel electrode;
A liquid crystal disposed between the pixel electrode and the counter electrode;
Common wiring electrically connected to the common potential;
Have
The pixel electrode includes a main pixel electrode to which a data signal is input, and a sub-pixel electrode separated from the main pixel electrode,
The capacitor electrode has a main capacitor electrode electrically connected to the common potential to face the main pixel electrode, and the sub capacitor electrode electrically connected to the common potential to be opposed to the sub-pixel electrode, wherein A divided capacitor electrode facing the subpixel electrode, penetrating through the insulating layer and electrically connected to the main pixel electrode,
The pixel electrode and the capacitor electrode, Ri Do from each transparent conductive material,
The common line is made of opaque conductive material, a liquid crystal display device comprising that you electrically connected to the main capacitor electrode and the auxiliary capacitance electrode. The liquid crystal display device according to claim 1 ,
Before SL main capacitor electrode has a shape that fits entirely within the projection region of the main pixel electrode,
The sub-capacitance electrode has a shape that completely fits within a projection area of the sub-pixel electrode,
The common line, the liquid crystal display device, characterized by electrically connecting overlapped before Symbol main capacitor electrode and the auxiliary capacitance electrode. The liquid crystal display device according to claim 2,
The divided capacitor electrode is continuously and integrally formed from a first portion facing the subpixel electrode to a second portion facing the main pixel electrode,
A pad portion formed of the non-transparent conductive material so as to overlap and electrically connect to the second portion;
The liquid crystal display device, wherein the divided capacitor electrode is electrically connected to the main pixel electrode at the pad portion.

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