JP5581931B2 - Vibrating piece, manufacturing method of vibrating piece, vibrator, vibrating device, and electronic apparatus - Google Patents

Description

  The present invention relates to a resonator element, a method for manufacturing the resonator element, a vibrator, a resonator device, and an electronic apparatus.

As a vibrating device such as a crystal oscillator, a vibrating device including a tuning fork type vibrating piece including a plurality of vibrating arms is known (for example, see Patent Document 1).
For example, the resonator element disclosed in Patent Document 1 includes a base, three vibrating arms extending from the base so as to be parallel to each other, and a lower electrode film, a piezoelectric film, and an upper electrode film on each vibrating arm. And a piezoelectric element formed and formed in this order. In such a resonator element, each piezoelectric element expands and contracts the piezoelectric layer when an electric field is applied between the lower electrode film and the upper electrode film, and the vibrating arm extends in the thickness direction of the base (so-called out-of-plane). Direction).

In such a vibrating piece, generally, a metal film is provided on the tip of the vibrating arm, and a part of the metal film is removed by irradiation with laser light, so that the bending vibration frequency (resonance frequency) of the vibrating arm is reduced. Adjustment is performed (for example, refer to Patent Document 2).
For example, Patent Document 2 discloses a method for adjusting the frequency of a vibrating piece in which each vibrating arm bends and vibrates in the lateral direction (in-plane direction). In the frequency adjustment method described in Patent Document 2, metal films for frequency adjustment (weight portions) are formed in the same pattern on both plate surfaces of the plate-like vibrating arms. Then, by laser beam irradiation, a part of the metal film on one plate surface of the vibrating arm and a part of the metal film on the other plate surface are simultaneously removed to perform rough adjustment, and then an argon ion beam , A part of the metal film on one plate surface of the metal arm is further removed for fine adjustment.
By applying the metal film (weight part) described in Patent Document 2 to the out-of-plane vibration type resonator element described in Patent Document 1, the frequency can be adjusted. However, in such a case, there is a problem that the number of steps of providing the weight member on the out-of-plane vibration type vibration piece described in Patent Document 1 increases, and the manufacture of the vibration piece becomes complicated.

JP 2009-5022 A JP 2008-160824 A

  SUMMARY OF THE INVENTION An object of the present invention is to provide a resonator element that is simple to manufacture and that can perform frequency adjustment easily and with high accuracy, a method for manufacturing the resonator element, and a highly reliable vibration including the resonator element. The object is to provide a child, a vibration device, and an electronic apparatus.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
[Application Example 1]
The resonator element according to the invention includes a base provided on a plane including a first direction and a second direction orthogonal to the first direction;
A vibrating arm extending from the base in the first direction and bending and vibrating in a normal direction of the plane;
A piezoelectric element that is provided on the vibrating arm and flexibly vibrates the vibrating arm;
A mass part provided on the vibrating arm,
The piezoelectric element has at least a first electrode layer, a second electrode layer, and a piezoelectric layer located between the first electrode layer and the second electrode layer,
The mass part has at least one film part,
The film part is made of the same material as any one of the layers constituting the piezoelectric element ,
The thickness of the mass part is less than or equal to the thickness of the piezoelectric element .
Thereby, a mass part can be collectively formed with a piezoelectric element. Therefore, it is possible to provide a resonator element that is easy to manufacture and that can perform frequency adjustment easily and with high accuracy. Further, the weight (mass) of the mass part can be suppressed within a range that is not inconvenient for frequency adjustment. Therefore, frequency adjustment can be performed easily and with high accuracy, and the vibrating arm can be flexibly vibrated stably.

[Application Example 2]
In the resonator element according to the aspect of the invention, it is preferable that the piezoelectric element has an insulator layer positioned between the first electrode layer and the second electrode layer.
Thereby, it is possible to more reliably insulate between the first electrode layer and the second electrode layer.
[Application Example 3]
In the resonator element according to the aspect of the invention, it is preferable that the piezoelectric element has a base layer positioned between the vibrating arm and the first electrode layer.
Thereby, peeling from the vibrating arm of the first electrode layer and peeling from the insulator layer of the second electrode layer can be prevented or suppressed.

[Application Example 4 ]
In the resonator element according to the aspect of the invention, the mass portion may include a distal end side mass portion provided on the distal end side of the vibrating arm, and a proximal end side mass portion provided on the proximal end side with respect to the distal end side mass portion. It is preferable to have.
Thereby, the distal end side mass part can be used for coarse frequency adjustment, and the proximal end mass part can be used for fine frequency adjustment. Therefore, the frequency adjustment of the resonator element can be performed easily and with high accuracy.

[Application Example 5 ]
In the resonator element according to the aspect of the invention, the base end-side mass portion may be provided in a region that exceeds 1/2 of the total length in the first direction from the base end of the vibrating arm and has a density of 2.20. It is preferable that the material is composed of (10 ³ kg / m ³ ) or more and 8.92 (10 ³ kg / m ³ ) or less.
By forming the base end side mass portion using a material in such a range, the frequency adjustment (fine adjustment) of the resonator element can be efficiently performed.

[Application Example 6 ]
In the resonator element according to the aspect of the invention, it is preferable that the tip-side mass portion has a portion made of a material having a density higher than 8.92 (10 ³ kg / m ³ ).
By forming the base end side mass portion using a material in such a range, frequency adjustment (coarse adjustment) of the resonator element can be efficiently performed.

[Application Example 7 ]
In the resonator element according to the aspect of the invention, it is preferable that the first electrode layer and the second electrode layer are made of different materials.
Thereby, the choice of the constituent material of a mass part increases, and the mass part of a more suitable mass can be formed.

[Application Example 8 ]
In the resonator element according to the aspect of the invention, the vibrating arm includes a first surface that is horizontal to the plane, and a second surface that faces the first surface.
It is preferable that the mass unit is provided on at least one of the first surface and the second surface.
When the piezoelectric element is provided on the surface (first surface) on which the piezoelectric element is provided, the formation of the mass portion becomes easier. In addition, when it is provided on the surface (second surface) opposite to the surface on which the piezoelectric element is provided, when the frequency adjustment is performed by removing a part of the mass part, the removed dust is removed from the piezoelectric body. It is possible to effectively prevent or suppress adhesion to the element. Thereby, the frequency adjustment can be performed with higher accuracy and the reliability of the resonator element can be maintained. Moreover, when providing in both surfaces of a 1st surface and a 2nd surface, the length in the 1st direction of a mass part can be restrained compared with the case where the mass part of the same mass is provided in one surface. Therefore, the size of the resonator element can be reduced.

[Application Example 9 ]
In the resonator element according to the aspect of the invention, it is preferable that a plurality of the vibrating arms are provided side by side in the second direction, and two adjacent vibrating arms bend and vibrate in directions opposite to each other.
Thereby, the leakage vibrations of the two vibrating arms adjacent to each other can be canceled each other. As a result, a vibration piece with less vibration leakage can be realized.

[Application Example 10 ]
The manufacturing method of the resonator element according to the invention includes a base formed on a plane including a first direction and a second direction orthogonal to the first direction;
A vibrating arm extending from the base in the first direction and bending and vibrating in a normal direction of the plane;
Provided on the vibrating arm, and having at least a first electrode layer, a second electrode layer, and a piezoelectric layer positioned between the first electrode layer and the second electrode layer, A method of manufacturing a resonator element having a piezoelectric element that flexibly vibrates a vibrating arm, and a mass portion provided on the vibrating arm,
The mass part is formed together with the piezoelectric element ,
The thickness of the mass part is less than or equal to the thickness of the piezoelectric element .
Accordingly, the mass part can be formed together with the piezoelectric element, that is, it can be formed at the same time, so that the manufacture of the resonator element can be simplified (the number of processes can be reduced).

[Application Example 11 ]
The vibrator of the present invention includes the resonator element of the present invention,
And a package containing the resonator element.
Thereby, a vibrator having excellent reliability can be provided.
[Application Example 12 ]
The vibrating device of the present invention includes the vibrating piece of the present invention,
And an oscillation circuit connected to the resonator element.
Thereby, it is possible to provide a vibration device such as an oscillator having excellent reliability.
[Application Example 13 ]
An electronic apparatus according to the present invention includes the resonator element according to the present invention.
Accordingly, it is possible to provide electronic devices such as a mobile phone, a personal computer, and a digital camera that are excellent in reliability.

1 is a cross-sectional view showing a vibrator according to a first embodiment of the present invention. FIG. 2 is a top view showing the vibrator shown in FIG. 1. FIG. 2 is a bottom view showing the vibrator shown in FIG. 1. (A) is the sectional view on the AA line in FIG. 2, (b) is the sectional view on the BB line in FIG. FIG. 3 is a perspective view for explaining the operation of the resonator element shown in FIG. 2. It is sectional drawing for demonstrating the mass part which concerns on 2nd Embodiment of this invention. It is sectional drawing for demonstrating the mass part which concerns on 3rd Embodiment of this invention. It is a graph which shows the relationship between the formation position of the mass part formed in the vibrating arm, and the frequency. It is a graph which shows the relationship between the density of the constituent material of the mass part formed in a vibrating arm, and the boundary position where a frequency increases / decreases. It is a figure which shows an example of a structure of a front end side mass part and a base end side mass part. It is an electronic device (notebook type personal computer) provided with the resonator element according to the invention. It is an electronic device (cellular phone) including the resonator element according to the invention. It is an electronic device (digital still camera) provided with the resonator element according to the invention.

Hereinafter, a resonator element, a method of manufacturing a resonator element, a resonator, a resonator device, and an electronic apparatus according to the invention will be described in detail based on embodiments shown in the accompanying drawings.
<First Embodiment>
1 is a cross-sectional view showing a vibrator according to the first embodiment of the present invention, FIG. 2 is a top view showing the vibrator shown in FIG. 1, and FIG. 3 is a bottom view showing the vibrator shown in FIG. 4A is a cross-sectional view taken along the line AA in FIG. 2, FIG. 4B is a cross-sectional view taken along the line BB in FIG. 2, and FIG. 5 illustrates the operation of the resonator element shown in FIG. It is a perspective view for doing.

In each figure, for convenience of explanation, an X axis, a Y axis, and a Z axis are illustrated as three axes orthogonal to each other. In the following, the direction parallel to the Y-axis (first direction) is the Y-axis direction, the direction parallel to the X-axis (second direction) is the “X-axis direction”, and the direction parallel to the Z-axis (first The normal direction of the plane including the second direction and the second direction is called the Z-axis direction. In the following description, for convenience of explanation, the upper side in FIG. 1 is referred to as “upper”, the lower side as “lower”, the right side as “right”, and the left side as “left”. In FIG. 1, for convenience of explanation, illustration of a plurality of piezoelectric elements and a plurality of wiring layers formed on the vibration substrate 21 is omitted.
A vibrator 1 shown in FIG. 1 includes a vibrating piece 2 and a package 3 that houses the vibrating piece 2.

Hereinafter, each part which comprises the vibrator | oscillator 1 is demonstrated in detail sequentially.
1. First, the resonator element 2 will be described.
The resonator element 2 is a three-leg tuning fork type resonator element as shown in FIG. The resonator element 2 includes a vibration substrate 21, piezoelectric elements 22, 23, 24 and connection electrodes 41, 42 provided on the vibration substrate 21, and mass parts 51, 52, 53.

The vibration substrate 21 has a base portion 27 and three vibration arms 28, 29, and 30.
The constituent material of the vibration substrate 21 is not particularly limited as long as it can exhibit desired vibration characteristics, and various piezoelectric materials and various non-piezoelectric materials can be used.
Examples of the piezoelectric material include crystal, lithium tantalate, lithium niobate, lithium borate, and barium titanate. In particular, the piezoelectric material constituting the vibration substrate 21 is preferably quartz (X-cut plate, AT-cut plate, Z-cut plate, etc.). When the vibration substrate 21 is made of quartz, the vibration characteristics (particularly the frequency temperature characteristic) of the vibration substrate 21 can be made excellent. Further, the vibration substrate 21 can be formed with high dimensional accuracy by etching.

  Examples of the non-piezoelectric material include silicon and quartz. In particular, silicon is preferable as the non-piezoelectric material constituting the vibration substrate 21. When the vibration substrate 21 is made of silicon, a vibration substrate 21 having excellent vibration characteristics can be realized at a relatively low cost. In addition, it is easy to integrate the resonator element 2 and other circuit elements by forming an integrated circuit on the base 27. Further, the vibration substrate 21 can be formed with high dimensional accuracy by etching.

In such a vibration substrate 21, the base 27 has a substantially plate shape with the Z-axis direction as the thickness direction. As shown in FIGS. 1 and 3, the base portion 27 includes a thin portion 271 formed to be thin and a thick portion 272 formed to be thicker than the thin portion 271. They are arranged side by side in the axial direction.
The thin portion 271 is formed to have a thickness equal to each of the vibrating arms 28, 29, and 30 described later. Therefore, the thick portion 272 is a portion whose thickness in the Z-axis direction is larger than the thickness of each vibrating arm 28, 29, 30 in the Z-axis direction.

By forming the thin portion 271 and the thick portion 272 as described above, the thickness of the vibrating arms 28, 29, 30 is reduced to improve the vibration characteristics of the vibrating arms 28, 29, 30, and the vibrating piece 2 The handling property at the time of manufacturing can be made excellent.
Three vibrating arms 28, 29, and 30 are connected to the opposite side of the thin portion 271 of the base portion 27 to the thick portion 272.

The vibrating arms 28 and 29 are connected to both ends of the base 27 (thin wall portion 271) in the X-axis direction, and the vibrating arm 30 is connected to a center portion of the base 27 (thin wall portion 271) in the X-axis direction. Yes.
The three vibrating arms 28, 29, and 30 are provided so as to extend from the base 27 so as to be parallel to each other. More specifically, the three vibrating arms 28, 29, and 30 extend from the base 27 in the Y-axis direction (the arrow direction of the Y-axis) and are provided side by side in the X-axis direction.

Each of the vibrating arms 28, 29, and 30 has a longitudinal shape, an end portion (base end portion) on the base portion 27 side is a fixed end, and an end portion (tip end portion) opposite to the base portion 27 is a free end. Become.
In addition, each of the vibrating arms 28, 29, and 30 has a constant width over the entire area in the longitudinal direction. In addition, each vibrating arm 28, 29, 30 may have portions with different widths.
The vibrating arms 28, 29, and 30 are formed to have the same length. The lengths of the vibrating arms 28, 29, and 30 are set according to the width and thickness of the vibrating arms 28, 29, and 30, and may be different from each other.
In addition, you may provide the mass part (hammer head) with a larger cross-sectional area than a base end part in each front-end | tip part of the vibrating arms 28, 29, and 30 as needed. In this case, the vibrating piece 2 can be made smaller, and the bending vibration frequency of the vibrating arms 28, 29, and 30 can be further reduced.

  As shown in FIG. 4A, a mass part 51 is provided on the upper surface 281 of the vibrating arm 28. The mass portion 51 is for adjusting the resonance frequency of the resonating arm 28 by reducing the mass, for example, by removing part or all of the mass portion 51 by irradiation with energy rays. Similarly, a mass part 52 is provided on the upper surface 291 of the vibrating arm 29, and a mass part 53 is provided on the upper surface 301 of the vibrating arm 30. These mass parts 51, 52 and 53 will be described in detail later.

Further, as shown in FIG. 4B, a piezoelectric element 22 is provided on such a vibrating arm 28, and a piezoelectric element 23 is provided on the vibrating arm 29. Further, as shown in FIG. A piezoelectric element 24 is provided on the arm 30. Thereby, even if the vibrating arms 28, 29, 30 themselves do not have piezoelectricity, or the vibrating arms 28, 29, 30 have piezoelectricity, the direction of the polarization axis or crystal axis thereof is the Z-axis direction. Even if it is not suitable for flexural vibration in the above, each vibrating arm 28, 29, 30 can be flexibly vibrated in the Z-axis direction relatively easily and efficiently. In addition, since the vibrating arms 28, 29, and 30 have piezoelectricity and the directions of the polarization axis and the crystal axis are not limited, the selection range of the materials of the vibrating arms 28, 29, and 30 is widened. Therefore, the resonator element 2 having desired vibration characteristics can be realized relatively easily.
The piezoelectric element 22 has a function of expanding and contracting by energization to bend and vibrate the vibrating arm 28 in the Z-axis direction. In addition, the piezoelectric element 23 has a function of expanding and contracting by energization to bend and vibrate the vibrating arm 29 in the Z-axis direction. The piezoelectric element 24 has a function of expanding and contracting by energization to bend and vibrate the vibrating arm 30 in the Z-axis direction.

  As shown in FIG. 4B, such a piezoelectric element 22 includes a first underlayer 221, a first electrode layer 222, a piezoelectric layer (piezoelectric thin film) 223, an insulator on the vibrating arm 28. A layer 224, a second base layer 225, and a second electrode layer 226 are stacked in this order. Similarly, the piezoelectric element 23 includes a first base layer 231, a first electrode layer 232, a piezoelectric layer (piezoelectric thin film) 233, an insulator layer 234, a second base layer 235, on the vibrating arm 29. The second electrode layer 236 is formed by laminating in this order. In addition, the piezoelectric element 24 has a first underlayer 241, a first electrode layer 242, a piezoelectric layer (piezoelectric thin film) 243, an insulator layer 244, a second underlayer 245, a first underlayer on the vibrating arm 30. Two electrode layers 246 are laminated in this order.

Hereinafter, each layer constituting the piezoelectric element 22 will be described in detail in order. Note that the configuration of each layer of the piezoelectric elements 23 and 24 is the same as that of the piezoelectric element 22, and therefore the description thereof is omitted.
[First electrode layer]
The first electrode layer 222 is provided on the vibrating arm 28 from the base 27 along the extending direction (Y-axis direction).

In the present embodiment, the length of the first electrode layer 222 is shorter than the length of the vibrating arm 28 on the vibrating arm 28.
In the present embodiment, the length of the first electrode layer 222 (the length of the piezoelectric element 22) is set to about ½ of the length of the vibrating arm 28. Thereby, the CI value of the resonator element 2 can be kept low, and excellent vibration characteristics can be exhibited. When the length of the first electrode layer 222 is shorter than ½ of the length of the vibrating arm 28, the CI value of the vibrating piece increases, and sufficient vibration characteristics may not be obtained.

  Such a first electrode layer 222 includes gold (Au), gold alloy, platinum (Pt), aluminum (Al), aluminum alloy, silver (Ag), silver alloy, chromium (Cr), chromium alloy, copper ( Cu), molybdenum (Mo), niobium (Nb), tungsten (W), iron (Fe), titanium (Ti), cobalt (Co), zinc (Zn), zirconium (Zr) and other metal materials, ITO, ZnO It can form with transparent electrode materials, such as.

Among them, as a constituent material of the first electrode layer 222, it is preferable to use a metal (gold, gold alloy) or platinum mainly made of gold, and a metal (especially gold) mainly made of gold. More preferred.
Au is suitable as an electrode material because it has excellent conductivity (low electrical resistance) and excellent resistance to oxidation. Further, Au can be easily patterned by etching as compared with Pt. Furthermore, the orientation of the piezoelectric layer 223 can be enhanced by forming the first electrode layer 222 from gold or a gold alloy.

  The average thickness of the first electrode layer 222 is not particularly limited, but is preferably about 1 to 300 nm, and more preferably 10 to 200 nm, for example. This prevents the first electrode layer 222 from adversely affecting the drive characteristics of the piezoelectric element 22 and the vibration characteristics of the vibrating arm 28, and has excellent conductivity of the first electrode layer 222 as described above. Can be.

[First underlayer]
Depending on the constituent materials of the first electrode layer 222 and the vibration substrate 21, their adhesion may be low (for example, when the first electrode layer 222 is made of gold and the vibration substrate 21 is made of quartz). . Therefore, it is preferable to provide the first base layer 221 between the first electrode layer 222 and the vibration substrate 21 as in the present embodiment.

The first base layer 221 is made of, for example, Ti, Cr or the like. Thereby, the adhesion between the first foundation layer 221 and the vibrating arm 28 and the adhesion between the first foundation layer 221 and the first electrode layer 222 can be made excellent. As a result, the first electrode layer 222 can be prevented from peeling from the vibrating arm 28, and the reliability of the resonator element 2 can be improved.
The average thickness of the first underlayer 221 prevents the first underlayer 221 from adversely affecting the driving characteristics of the piezoelectric element 22 and the vibration characteristics of the vibrating arm 28, while maintaining the adhesion as described above. Although it will not specifically limit if the effect to raise can be exhibited, For example, it is preferable that it is about 1-300 nm.

[Piezoelectric layer]
The piezoelectric layer 223 is provided on the first electrode layer 222 along the extending direction (Y-axis direction) of the vibrating arm 28. In addition, the length of the piezoelectric layer 223 in the extending direction (Y-axis direction) of the vibrating arm 28 is substantially equal to the length of the first electrode layer 222 in the same direction (Y-axis direction).
Thereby, the orientation of the piezoelectric layer 223 can be enhanced by the surface state of the first electrode layer 222 as described above over the entire area of the piezoelectric layer 223 in the Y-axis direction. Therefore, the piezoelectric layer 223 can be homogenized in the longitudinal direction (Y-axis direction) of the vibrating arm 28.

  In addition, an end portion on the base portion 27 side of the piezoelectric layer 223 (that is, a base end portion of the piezoelectric layer 223) is provided so as to straddle the boundary portion between the vibrating arm 28 and the base portion 27. Thereby, the driving force of the piezoelectric element 22 can be efficiently transmitted to the vibrating arm 28. In addition, a sudden change in rigidity at the boundary between the vibrating arm 28 and the base 27 can be mitigated. Therefore, the Q value of the resonator element 2 can be increased.

Examples of the constituent material (piezoelectric material) of the piezoelectric layer 223 include zinc oxide (ZnO), aluminum nitride (AlN), lithium tantalate (LiTaO ₃ ), lithium niobate (LiNbO ₃ ), and niobic acid. Examples include potassium (KNbO ₃ ), lithium tetraborate (Li ₂ B ₄ O ₇ ), barium titanate (BaTiO ₃ ), and PZT (lead zirconate titanate), but it is preferable to use AIN or ZnO.

Among them, it is preferable to use ZnO or AlN as a constituent material of the piezoelectric layer 223. ZnO (zinc oxide) and aluminum nitride (AlN) are excellent in c-axis orientation. Therefore, the CI value of the resonator element 2 can be reduced by configuring the piezoelectric layer 223 with ZnO as a main material. Moreover, these materials can be formed into a film by the reactive sputtering method.
The average thickness of the piezoelectric layer 223 is preferably 50 to 3000 nm, and more preferably 200 to 2000 nm. Thereby, it is possible to improve the drive characteristics of the piezoelectric element 22 while preventing the piezoelectric layer 223 from adversely affecting the vibration characteristics of the vibrating arm 28.

[Insulator layer]
The insulator layer 224 has a function of protecting the piezoelectric layer 223 and preventing a short circuit between the first electrode layer 222 and the second electrode layer 226. The insulator layer 224 is made of, for example, SiO ₂ (silicon oxide), AlN (aluminum nitride), SiN (silicon nitride), or the like.
The average thickness of the insulator layer 224 is not particularly limited, but is preferably 50 to 500 nm. When the thickness is less than the lower limit value, the effect of preventing the short circuit as described above tends to be reduced. On the other hand, when the thickness exceeds the upper limit value, the characteristics of the piezoelectric element 22 are adversely affected. There is a fear.

[Second electrode layer]
The second electrode layer 226 is provided along the extending direction of the vibrating arm 28.
The length of the second electrode layer 226 in the extending direction of the vibrating arm 28 is substantially equal to the length of the piezoelectric layer 223. Thereby, the entire region of the piezoelectric layer 223 can be expanded and contracted in the extending direction (Y-axis direction) of the vibrating arm 28 by the electric field generated between the second electrode layer 226 and the first electrode layer 222 described above. it can. Therefore, vibration efficiency can be increased.

Such a second electrode layer 226 includes gold (Au), gold alloy, platinum (Pt), aluminum (Al), aluminum alloy, silver (Ag), silver alloy, chromium (Cr), chromium alloy, copper ( Cu), molybdenum (Mo), niobium (Nb), tungsten (W), iron (Fe), titanium (Ti), cobalt (Co), zinc (Zn), zirconium (Zr) and other metal materials, ITO, ZnO It can form with transparent electrode materials, such as.
The average thickness of the second electrode layer 226 is not particularly limited, but is preferably about 1 to 300 nm, and more preferably 10 to 200 nm, for example. This prevents the second electrode layer 226 from adversely affecting the drive characteristics of the piezoelectric element 22 and the vibration characteristics of the vibrating arm 28, and makes the conductivity of the second electrode layer 226 excellent. Can do.

[Second base layer]
Depending on the constituent materials of the second electrode layer 226 and the insulator layer 224, their adhesion may be low (for example, the second electrode layer 226 is made of gold and the insulator layer 224 is made of SiO ₂ . If you want to). Therefore, it is preferable to provide the second base layer 225 between the second electrode layer 226 and the insulator layer 224 as in this embodiment.

  The second underlayer 225 is made of, for example, Ti, Cr or the like. Thereby, the adhesion between the second foundation layer 225 and the insulator layer 224 and the adhesion between the second foundation layer 225 and the second electrode layer 226 can be made excellent. As a result, the second electrode layer 226 can be prevented from peeling from the insulator layer 224, and the reliability of the resonator element 2 can be improved.

The average thickness of the second underlayer 225 prevents the second underlayer 225 from adversely affecting the driving characteristics of the piezoelectric element 22 and the vibration characteristics of the vibrating arm 28, while maintaining the adhesion as described above. Although it will not specifically limit if the effect to raise can be exhibited, For example, it is preferable that it is about 1-300 nm.
In such a piezoelectric element 22, when a voltage is applied between the first electrode layer 222 and the second electrode layer 226, an electric field in the Z-axis direction is generated in the piezoelectric layer 223. Due to this electric field, the piezoelectric layer 223 expands or contracts in the Y-axis direction, causing the vibrating arm 28 to bend and vibrate in the Z-axis direction.

  Similarly, in the piezoelectric element 23, when a voltage is applied between the first electrode layer 232 and the second electrode layer 236, the piezoelectric layer 233 expands or contracts in the Y-axis direction and vibrates. The arm 29 is bent and vibrated in the Z-axis direction. In the piezoelectric element 24, when a voltage is applied between the first electrode layer 242 and the second electrode layer 246, the piezoelectric layer 243 expands or contracts in the Y-axis direction, and the vibrating arm 30 is bent and vibrated in the Z-axis direction.

  In the piezoelectric elements 22, 23, and 24, the first electrode layers 222 and 232 described above are electrically connected to the second electrode layer 246 through a conduction portion including a through electrode and a wiring (not shown). Has been. The second electrode layer 246 is electrically connected to the connection electrode 41 provided on the upper surface of the base portion 27 as shown in FIG. Accordingly, the first electrode layers 222 and 232 and the second electrode layer 246 are electrically connected to the connection electrode 41, respectively.

  In addition, the first electrode layer 242 is electrically connected to the second electrode layers 226 and 236 via a conduction portion including a through electrode and a wiring (not shown). The second electrode layers 226 and 236 are electrically connected to the connection electrode 42 provided on the upper surface of the base portion 27 via the wiring 43 as shown in FIG. Accordingly, the first electrode layer 242 and the second electrode layers 226 and 236 are electrically connected to the connection electrode 42.

  The connection electrodes 41 and 42 and the wiring 43 are gold (Au), gold alloy, platinum (Pt), aluminum (Al), aluminum alloy, silver (Ag), silver alloy, chromium (Cr), chromium alloy, Metal materials such as copper (Cu), molybdenum (Mo), niobium (Nb), tungsten (W), iron (Fe), titanium (Ti), cobalt (Co), zinc (Zn), zirconium (Zr), etc. It can be formed of a transparent electrode material such as ITO or ZnO. Further, they can be formed simultaneously with the first electrode layers 222, 232, 242 or the second electrode layers 226, 236, 246.

  In the resonator element 2 having such a configuration, when a voltage (voltage for vibrating the vibrating arms 28, 29, 30) is applied between the connection electrode 41 and the connection electrode 42, the first electrode layer 222, 232 and the second electrode layer 246, and the first electrode layer 242 and the second electrode layer 226, 236 have opposite polarities, and the piezoelectric layers 223, 233, 243 are each provided with Z An axial voltage is applied. Thereby, the vibrating arms 28, 29, and 30 can be flexibly vibrated at a certain frequency (resonance frequency) by the inverse piezoelectric effect of the piezoelectric material. At this time, as shown in FIG. 5, the vibrating arms 28 and 29 bend and vibrate in the same direction, and the vibrating arm 30 bends and vibrates in the direction opposite to the vibrating arms 28 and 29.

In this way, by causing the two adjacent vibrating arms to bend and vibrate in the opposite directions, leakage vibrations generated by the two adjacent vibrating arms 28, 30 and 29, 30 can be canceled out. As a result, vibration leakage can be prevented.
Further, when the vibrating arms 28, 29, 30 are flexibly vibrated, a voltage is generated between the connection electrodes 41, 42 at a certain frequency due to the piezoelectric effect of the piezoelectric material. Utilizing these properties, the resonator element 2 can generate an electrical signal that vibrates at a resonance frequency.

(Parts by mass)
Next, the mass parts 51, 52, and 53 will be described.
As described above, the mass parts 51, 52, and 53 are used to adjust the resonance frequency of the vibrating arms 28, 29, and 30 by reducing the mass by removing part or all of them by irradiation with energy rays. It is a weight.

The mass parts 51, 52, 53 are provided on the upper surfaces 281, 291, 301 of the vibrating arms 28, 29, 30. That is, the mass parts 51, 52, 53 are formed on the surface on which the piezoelectric elements 22, 23, 24 of the vibrating arms 28, 29, 30 are provided. With such an arrangement, it is possible to more easily form the mass portions 51, 52, 53 and the piezoelectric elements 22, 23, 24 together by the method for manufacturing the resonator element 2 described later.
As shown in FIG. 4A, the mass unit 51 includes a first film unit 511, a second film unit 512, a third film unit 513, a fourth film unit 514, The fifth film part 515 and the sixth film part 516 are laminated in this order.

Similarly, the mass unit 52 is provided on the vibrating arm 29 with the first film unit 521, the second film unit 522, the third film unit 523, the fourth film unit 524, the fifth film unit 525, and the Six film portions 526 are stacked in this order.
In addition, the mass unit 53 includes a first film unit 531, a second film unit 532, a third film unit 533, a fourth film unit 534, a fifth film unit 535, and a sixth film unit on the vibrating arm 30. The film portions 536 are stacked in this order.

Hereinafter, the mass unit 51 provided on the vibrating arm 28 will be described in detail. In addition, since the mass part 52 provided on the vibrating arm 29 and the mass part 53 provided on the vibrating arm 30 are the same as the mass part 51, description thereof is omitted.
[First film part]
The first film portion 511 is formed on the upper surface 281 of the vibrating arm 28. Such a first film portion 511 is made of the same material as that of the first base layer 221 of the piezoelectric element 22. Further, the thickness (average thickness) of the first film portion 511 is substantially equal to the thickness (average thickness) of the first base layer 221.

[Second film part]
The second film part 512 is formed on the upper surface of the first film part 511. Such a second film portion 512 is made of the same material as that of the first electrode layer 222 of the piezoelectric element 22. Further, the thickness (average thickness) of the second film portion 512 is substantially equal to the thickness (average thickness) of the first electrode layer 222.

[Third film part]
The third film part 513 is formed on the upper surface of the second film part 512. Such a third film portion 513 is made of the same material as that of the piezoelectric layer 223 of the piezoelectric element 22. Further, the thickness (average thickness) of the third film portion 513 is substantially equal to the thickness (average thickness) of the piezoelectric layer 223.

[Fourth film part]
The fourth film part 514 is formed on the upper surface of the third film part 513. Such a fourth film portion 514 is made of the same material as that of the insulator layer 224 of the piezoelectric element 22. Further, the thickness (average thickness) of the fourth film portion 514 is substantially equal to the thickness (average thickness) of the insulator layer 224.

[Fifth film part]
The fifth film part 515 is formed on the upper surface of the fourth film part 514. Such a fifth film portion 515 is made of the same material as that of the second underlayer 225 of the piezoelectric element 22. Further, the thickness (average thickness) of the fifth film portion 515 is substantially equal to the thickness (average thickness) of the second underlayer 225.

[Sixth film part]
The sixth film part 516 is formed on the upper surface of the fifth film part 515. Such a sixth film portion 516 is made of the same material as that of the second electrode layer 226 of the piezoelectric element 22. Further, the thickness (average thickness) of the sixth film portion 516 is substantially equal to the thickness (average thickness) of the second electrode layer 226.

  As described above, the mass part 51 includes a plurality (six) of film parts 511, 512, 513, 514, 515, and 516, and each of the film parts 511, 512, 513, 514, 515, and 516 includes a piezoelectric element. It is made of the same material as any one of the plurality of layers constituting the body element 22.

By configuring the mass part 51 as described above, the following effects can be exhibited. That is, since the mass portion 51 and the piezoelectric element 22 can be collectively formed on the vibrating arm 28 (that is, the mass portion 51 and the piezoelectric element 22 can be formed simultaneously (within the same process)), the vibrating piece 2 Therefore, the manufacturing process of the resonator element 2 can be simplified.
Specifically, as will be described later in the manufacturing method, the first film portion 511 and the first base layer 221 are collectively formed, and then the second film portion 512 and the first electrode layer 222 are collectively formed. Then, the third film portion 513 is formed together with the piezoelectric layer 223, then the fourth film portion 514 is formed together with the insulator layer 224, and then the fifth film portion 515 is formed into the second layer. The mass portion 51 and the piezoelectric element 22 can be collectively formed by forming together with the base layer 225 and forming the sixth film portion 516 together with the second electrode layer 226. Therefore, for example, a step of separately forming the mass portion 51 can be omitted, and the manufacture of the resonator element 2 can be simplified.

  In particular, in the present embodiment, each of the film portions 511, 512, 513, 514, 515 and 516 constituting the mass portion 51 has a thickness substantially equal to the corresponding layer of the piezoelectric element 22. Therefore, as will be described later in the manufacturing method, the film thickness of the film formed by various film forming methods is partially adjusted (for example, the film thickness of the portion corresponding to the first film portion 511 is changed to the other film thickness). There is no need to make the part thinner), and the manufacture of the resonator element 2 can be further facilitated.

The thickness of the mass part 51 is preferably equal to or less than the thickness of the piezoelectric element 22. Thereby, the weight (mass) of the mass part 51 can be suppressed in a range that is not inconvenient for frequency adjustment. That is, it is possible to prevent or suppress the mass portion 51 from becoming excessively heavy, to perform frequency adjustment easily and with high accuracy, and to vibrate and vibrate the vibrating arm 28 stably.
As in the present embodiment, the thickness of each of the film portions 511, 512, 513, 514, 515 and 516 is made equal to the film thickness of the corresponding layer of the piezoelectric element 22 to ensure the mass portion. The thickness of 51 can be equal to or less than the thickness of the piezoelectric element 22.

(Frequency adjustment method)
Next, a method for adjusting the frequency of the resonator element 2 will be described. In the following, the frequency adjustment of the vibrating arm 28 will be described as a representative, but the frequency adjustment of the vibrating arms 29 and 30 is the same as the frequency adjustment of the vibrating arm 28.
First, the resonator element 2 before frequency adjustment (unadjusted) is prepared. At this time, the mass portion 51 as described above is provided on the vibrating arm 28. Further, the frequency (resonance frequency) of the vibrating arm 28 before frequency adjustment is set to be lower than the target frequency (resonance frequency).

And a part of mass part 51 is removed as needed by irradiation of an energy ray. For example, when a part of the mass part 51 is removed by laser light irradiation, the removed part of the mass part 51 has a shape such as a line shape or a dot shape. Thereby, since the mass of the mass part 51 decreases, the frequency of the vibrating arm 28 is increased.
The energy beam used for frequency adjustment is not particularly limited as long as it can remove a necessary portion of the mass unit 51 without adversely affecting the vibrating arm 28, and includes radiation, electron beam, laser, Examples of the ion beam include a carbon dioxide laser, an excimer laser, and a YAG laser. Thereby, a part of mass part 51 can be removed by a desired amount easily and reliably.

(Manufacturing method of vibrating piece)
Here, an example of the above-described method for manufacturing the resonator element 2 (the manufacturing method of the present invention) will be briefly described.
The manufacturing method of the resonator element 2 includes: [A] forming the first base layers 221, 231 and 241 and the first film portions 511, 521 and 531 on the vibrating arms 28, 29 and 30, and [B]. First electrode layers 222, 232, and 242 are formed on the first base layers 221, 231, and 241, and second film portions 512, 522, and 532 are formed on the first film portions 511, 521, and 531. And [C] forming the piezoelectric layers 223, 233, 243 on the first electrode layers 222, 232, 242 and forming a third film portion on the second film portions 512, 522, 532 513, 523, 533, and [D] forming the insulator layers 224, 234, 244 on the piezoelectric layers 223, 233, 243, and forming the first on the third film portions 513, 523, 533 4 film parts 514, 524, 534 are formed And [E] forming second underlayers 225, 235, 245 on insulator layers 224, 234, 244, and fifth film portions 515 on fourth film portions 514, 524, 534. Steps of forming 525, 535 and [F] forming second electrode layers 226, 236, 246 on the second base layers 225, 235, 245, and fifth film portions 515, 525, 535 Forming sixth film portions 516, 526, and 536 thereon.

Hereinafter, each step will be described.
[A]
First, a substrate for forming the vibration substrate 21 is prepared, and the vibration substrate 21 is formed by etching the substrate.
More specifically, for example, when the substrate is a quartz substrate, the thin portion 271 of the quartz substrate is removed by anisotropic etching using BHF (buffer hydrogen fluoride) as an etching solution. Turn into. Thereafter, the thinned portion is partially removed by anisotropic etching similar to the above to form the vibrating arms 28, 29, and 30. Thereby, the vibration substrate 21 is formed.

Thereafter, first base layers 221, 231 and 241 and first film portions 511, 521 and 531 are formed on the vibrating arms 28, 29 and 30.
The first base layers 221, 231, 241 and the first film portions 511, 521, 531 can be formed by a physical film forming method such as sputtering or vacuum deposition, or a chemical such as CVD (Chemical Vapor Deposition). Examples include vapor phase film formation methods such as vapor deposition, and various coating methods such as inkjet methods, but it is preferable to use vapor phase film formation methods (particularly sputtering or vacuum vapor deposition). In forming (patterning) the first base layers 221, 231, and 241 and the first film portions 511, 521, and 531, it is preferable to use a photolithography method.
Note that the first base layers 221, 231, and 241 and the first film portions 511, 521, and 531 are collectively formed in the same film forming process.

[B]
Next, first electrode layers 222, 232, and 242 are formed on the first base layers 221, 231, and 241, and second film portions 512, 522, 532 is formed.
The first electrode layers 222, 232, and 242 and the second film portions 512, 522, and 532 can be formed by sputtering, physical deposition such as vacuum deposition, chemical vapor deposition such as CVD, or the like. There are various coating methods such as a phase film forming method and an ink jet method, but it is preferable to use a vapor phase film forming method (particularly a sputtering method or a vacuum evaporation method). In forming (patterning) the first electrode layers 222, 232, and 242 and the second film portions 512, 522, and 532, it is preferable to use a photolithography method.
Note that the first electrode layers 222, 232, and 242 and the second film portions 512, 522, and 532 are collectively formed in the same film formation step.
Here, if necessary, the wiring and the like are simultaneously formed in the steps [A] and [B].

[C]
Next, the piezoelectric layers 223, 233, and 243 are formed on the first electrode layers 222, 232, and 242 and the third film portions 513, 523, and 533 are formed on the second film portions 512, 522, and 532, respectively. Form.
The piezoelectric layers 223, 233, and 243 and the third film portions 513, 523, and 533 can be formed by vapor deposition such as sputtering, physical deposition such as vacuum deposition, and chemical vapor deposition such as CVD. Although various coating methods such as a film method and an ink jet method can be mentioned, it is preferable to use a vapor phase film forming method (particularly a reactive sputtering method). In forming (patterning) the piezoelectric layers 223, 233, and 243 and the third film portions 513, 523, and 533, it is preferable to use a photolithography method. Further, when the piezoelectric layers 223, 233, and 243 and the third film portions 513, 523, and 533 are patterned, it is preferable to use wet etching to remove unnecessary portions.
Note that the piezoelectric layers 223, 233, and 243 and the third film portions 513, 523, and 533 are collectively formed in the same film forming process.

[D]
Next, the insulator layers 224, 234, 244 are formed on the piezoelectric layers 223, 233, 243, and the fourth film portions 514, 524, 534 are formed on the third film portions 513, 523, 533. .
The insulator layers 224, 234 and 244 and the fourth film portions 514, 524 and 534 can be formed by vapor deposition such as sputtering, physical deposition such as vacuum deposition, chemical vapor deposition such as CVD. Although various coating methods such as a film method and an ink jet method can be mentioned, it is preferable to use a vapor phase film forming method (particularly a reactive sputtering method). In forming (patterning) the insulator layers 224, 234, 244 and the fourth film portions 514, 524, 534, it is preferable to use a photolithography method. In addition, when the insulator layers 224, 234, 244 and the fourth film portions 514, 524, 534 are patterned, it is preferable to use wet etching to remove unnecessary portions.
Note that the insulator layers 224, 234, and 244 and the fourth film portions 514, 524, and 534 are collectively formed in the same film formation step.

[E]
Next, second base layers 225, 235, and 245 are formed on the insulator layers 224, 234, and 244, and fifth film portions 515, 525, and 535 are formed on the fourth film portions 514, 524, and 534, respectively. Form.
The second underlayers 225, 235, 245 and the fifth film portions 515, 525, 535 can be formed by sputtering, physical deposition methods such as vacuum deposition, chemical vapor deposition methods such as CVD, etc. There are various coating methods such as a phase film forming method and an ink jet method, but it is preferable to use a vapor phase film forming method (particularly a sputtering method or a vacuum evaporation method). In forming (patterning) the second base layers 225, 235, and 245 and the fifth film portions 515, 525, and 535, it is preferable to use a photolithography method.
Note that the second base layers 225, 235, and 245 and the fifth film portions 515, 525, and 535 are collectively formed in the same film formation step.

[F]
Next, the second electrode layers 226, 236, and 246 are formed on the second base layers 225, 235, and 245, and the sixth film portions 516 and 526 are formed on the fifth film portions 515, 525, and 535, respectively. 536 is formed.
The second electrode layers 226, 236, and 246 and the sixth film portions 516, 526, and 536 can be formed by sputtering, physical deposition such as vacuum deposition, chemical vapor deposition such as CVD, or the like. There are various coating methods such as a phase film forming method and an ink jet method, but it is preferable to use a vapor phase film forming method (particularly a sputtering method or a vacuum evaporation method). In forming (patterning) the second electrode layers 226, 236, and 246 and the sixth film portions 516, 526, and 536, it is preferable to use a photolithography method.

Note that the second electrode layers 226, 236, and 246 and the sixth film portions 516, 526, and 536 are collectively formed in the same film formation step.
Thereafter, frequency adjustment as described above is performed as necessary.
The frequency adjustment may be performed before the resonator element 2 is stored in the package 3 or may be performed after the resonator element 2 is stored in the package 3.

As described above, the resonator element 2 can be manufactured. According to such a manufacturing method, the piezoelectric elements 22, 23, 24 and the mass parts 51, 52, 53 can be formed at a time, so that the manufacturing method of the resonator element 2 can be simplified.
The configuration and the manufacturing method of the resonator element 2 have been described above, but the configuration of the resonator element 2 is not limited to the present embodiment.

  For example, the piezoelectric element 22 of the present embodiment includes a first base layer 221, a first electrode layer 222, a piezoelectric layer 223, an insulator layer 224, a second base layer 225, and a second electrode layer 226. The first electrode layer 222, the piezoelectric layer 223, and the second electrode layer 226, which are the minimum elements for exhibiting the function of the piezoelectric element 22, are formed by being laminated in this order. If so, the configuration of the piezoelectric element 22 is not particularly limited. For example, at least one of layers other than the first electrode layer 222, the piezoelectric layer 223, and the second electrode layer 226 (that is, the first base layer 221, the insulator layer 224, and the second base layer 225). One may be omitted. Conversely, at least one layer may be added. The same applies to the piezoelectric elements 23 and 24.

  In addition, the configuration (layer configuration) of the mass unit 51 of the present embodiment is the same as that of the piezoelectric element 22, but is not limited thereto and may be different. That is, the mass part 51 is arbitrarily selected from the first film part 511, the second film part 512, the third film part 513, the fourth film part 514, the fifth film part 515, and the sixth film part 516. It may be composed of one single layer selected from the above or two or more and five or less multilayers. For example, the mass unit 51 may be configured by a single layer of the first film unit 511 or may be configured as a stacked body in which the first film unit 511 and the second film unit 512 are stacked. .

The number of the film parts included in the mass part 51 and the constituent material of the film part that is the same as each of the layers constituting the piezoelectric element 22 are determined by, for example, 1) mass part 51 The optimum combination can be selected based on the mass, 2) the density of the constituent material of each layer constituting the piezoelectric element 22, and the like.
From this point of view, it is preferable that the constituent materials of the layers (particularly, the first electrode layer 222 and the second electrode layer 226) constituting the piezoelectric element 22 are different from each other. Thereby, the freedom degree of selection of the composition of mass part 51 increases, and the mass of mass part 51 can be made more suitable.

2. Package Next, the package 3 for housing and fixing the resonator element 2 will be described.
As illustrated in FIG. 1, the package 3 includes a plate-like base substrate 31, a frame-like frame member 32, and a plate-like lid member 33. The base substrate 31, the frame member 32, and the lid member 33 are laminated in this order from the lower side to the upper side. The base substrate 31 and the frame member 32 are formed of a ceramic material or the like which will be described later, and are joined by being integrally fired. The frame member 32 and the lid member 33 are joined by an adhesive or a brazing material. The package 3 houses the resonator element 2 in an internal space S defined by the base substrate 31, the frame member 32, and the lid member 33. In addition to the resonator element 2, an electronic component (oscillation circuit) for driving the resonator element 2 can be accommodated in the package 3.

As the constituent material of the base substrate 31, those having insulating properties (non-conductive) are preferable. For example, various glass materials, various ceramic materials such as oxide ceramics, nitride ceramics, carbide ceramics, polyimide, etc. Various resin materials can be used.
In addition, as the constituent material of the frame member 32 and the lid member 33, for example, the same constituent material as that of the base substrate 31, various metal materials such as Al and Cu, various glass materials, and the like can be used. In particular, when a material having light transmissivity such as a glass material is used as the constituent material of the lid member 33, the mass described above via the lid member 33 even after the resonator element 2 is accommodated in the package 3. The frequency of the resonator element 2 can be adjusted by irradiating the part with laser and removing the metal coating part to reduce the mass of the resonator element 2 (by a mass reduction method).

  On the upper surface of the base substrate 31, the above-described vibrating piece 2 is fixed via a fixing material 36. The fixing material 36 is made of, for example, an epoxy, polyimide, or silicone adhesive. In such a fixing material 36, an uncured (unsolidified) adhesive is applied onto the base substrate 31, and the vibration piece 2 is placed on the adhesive, and then the adhesive is cured or solidified. Is formed. Thereby, the resonator element 2 (base portion 27) is securely fixed to the base substrate 31.

In addition, you may perform this fixation using electrically conductive adhesives, such as an epoxy type, a polyimide type, and a silicone type containing electroconductive particle.
In addition, a pair of electrodes 35 a and 35 b are formed on the upper surface of the base substrate 31 so as to be exposed to the internal space S.
The electrode 35a is electrically connected to the connection electrode 42 described above via, for example, a metal wire (bonding wire) 38 formed by a wire bonding technique. The electrode 35b is electrically connected to the connection electrode 41 described above via a metal wire (bonding wire) 37 formed by, for example, a wire bonding technique.

In addition, the connection method of a pair of electrode 35a, 35b and the connection electrodes 41 and 42 is not limited to this, For example, you may carry out with a conductive adhesive. In this case, for example, the front and back of the vibrating piece 2 may be reversed, or the connection electrodes 41 and 42 may be formed on the lower surface of the vibrating piece 2.
Further, four external terminals 34 a, 34 b, 34 c, 34 d are provided on the lower surface of the base substrate 31.

  Out of these four external terminals 34a to 34d, the external terminals 34a and 34b are electrically connected to the electrodes 35a and 35b through conductor posts (not shown) provided in via holes formed in the base substrate 31, respectively. It is a connected hot terminal. Further, the other two external terminals 34c and 34d are used to increase the bonding strength and to equalize the distance between the package 3 and the mounting board when the package 3 is mounted on the mounting board, respectively. Dummy terminal.

Such electrodes 35a and 35b and external terminals 34a to 34d can be formed, for example, by applying gold plating to an underlying layer of tungsten and nickel plating.
When an electronic component is housed inside the package 3, the lower surface of the base substrate 31 can be used to check the characteristics of the electronic component and various information in the electronic component (for example, temperature compensation information of the vibrator) as necessary. A write terminal for rewriting (adjustment) may be formed.

Second Embodiment
Next, a second embodiment of the present invention will be described.
FIG. 6 is a cross-sectional view for explaining a mass part according to the second embodiment of the present invention. FIG. 6 is a diagram corresponding to the cross-sectional view taken along the line AA in FIG.
Hereinafter, the second embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted.

The second embodiment is substantially the same as the first embodiment except that the arrangement of the mass parts is different. In FIG. 6, the same reference numerals are given to the same configurations as those in the above-described embodiment. In the present embodiment, the mass portion 51A provided on the vibrating arm 28 will be described as a representative example, but the same applies to the mass portions 52A and 53A provided on the vibrating arms 29 and 30.
As shown in FIG. 6, the mass portion 51 </ b> A is provided on the lower surface 282 of the vibrating arm 28. Since the configuration of the mass unit 51A is the same as that of the mass unit 51 of the first embodiment described above, description thereof is omitted.

In this way, by providing the mass portion 51A on the surface opposite to the surface (upper surface 281) on which the piezoelectric element 22 is provided, the mass portion 51A is generated when the mass portion 51A is shaved with a laser during frequency adjustment. It is possible to prevent the shavings from adhering to the piezoelectric element 22, to prevent or suppress a decrease in the reliability of the piezoelectric element 22, and to suppress a frequency shift due to the shavings.
Further, according to the second embodiment as described above, the same effects as those of the first embodiment described above can be obtained.

<Third Embodiment>
Next, a third embodiment of the present invention will be described.
FIG. 7 is a cross-sectional view for explaining a mass part according to the third embodiment of the present invention. 7 is a diagram corresponding to the cross-sectional view taken along the line AA in FIG.
Hereinafter, the third embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted.

The second embodiment is substantially the same as the first embodiment except that the arrangement of the mass parts is different. In FIG. 7, the same reference numerals are given to the same components as those in the above-described embodiment. In this embodiment, the mass part 51B provided on the vibrating arm 28 will be described as a representative example, but the same applies to the mass parts 52B and 53B provided on the vibrating arms 29 and 30.
As shown in FIG. 7, mass portions 51 </ b> B are provided on the upper surface 281 and the lower surface 282 of the vibrating arm 28, respectively. Since the structure of each mass part 51B is the same as that of the mass part 51 of 1st Embodiment mentioned above, the description is abbreviate | omitted.

As described above, by providing the mass portions 51B on both surfaces (the upper surface 281 and the lower surface 282) of the vibrating arm 28, the same mass is provided on one surface of the vibrating arm 28 as in the first and second embodiments described above. Compared with the case where a mass part is provided, the length of the mass part 51B in the Y-axis direction can be suppressed. Therefore, the size of the resonator element 2 can be reduced.
In the present embodiment, the pair of mass parts 51B have the same configuration as each other, but are not limited to this, and may have different configurations. For example, one mass part 51B is composed of a first film part, a second film part, and a third film part, and the other film part is a fourth film part, a fifth film part, and a sixth film part. You may form by a part.
Moreover, according to 3rd Embodiment which was demonstrated above, there can exist an effect similar to 1st Embodiment mentioned above.

<Fourth embodiment>
Next, a fourth embodiment of the present invention will be described.
FIG. 8 is a graph showing the relationship between the formation position of the mass part formed on the vibrating arm and the frequency, and FIG. 9 shows the relationship between the density of the constituent material of the mass part formed on the vibrating arm and the boundary position where the frequency increases or decreases. FIG. 10 is a diagram illustrating an example of the configuration of the distal end side mass part and the proximal end side mass part.

Hereinafter, the second embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted.
The fourth embodiment is substantially the same as the first embodiment except that the configuration of the mass part is different. In FIG. 8, the same components as those in the above-described embodiment are denoted by the same reference numerals. In this embodiment, the mass unit provided on the vibrating arm 28 will be described as a representative example, but the same applies to the mass unit provided on the vibrating arms 29 and 30.

Prior to the description of the present embodiment, in order to understand the present embodiment, the relationship between the mass portion and the frequency in the resonator element 2 that performs out-of-plane vibration will be described in detail. In the following, the vibrating arm 28 will be described as a representative.
In the resonator element 2 that performs out-of-plane vibration, when the resonance frequency of the resonator element 2 is f, the entire length of the resonator arm 28 is L, and the thickness of the resonator arm 28 (the length in the Z-axis direction) is t, f∝ (t / L ² ). That is, the resonance frequency of the resonator element 2 that performs out-of-plane vibration is proportional to the thickness t of the vibrating arm 28 in the vibration direction and inversely proportional to the square of the total length L of the vibrating arm 28.

  Based on such basic characteristics, the inventor used a model of a vibrating piece in which one vibrating arm is formed on the base portion 27 as a metal film or insulating material on one surface of the vibrating arm in the XY plane. A change in frequency when a mass part made of a film or the like was formed and deleted from the tip side of the vibrating arm was simulated and examined. FIG. 8 shows the graph, in which the vertical axis represents the normalized frequency change Δf, and the horizontal axis represents the length from the base side end of the mass portion with respect to the total length L of the vibrating arm. Δf is Δf = (f−f0) /, where f0 is the frequency when the mass part for frequency adjustment is not formed on the vibrating arm, and f is the frequency when the mass part for frequency adjustment is formed. It is a value obtained by normalizing the amount of frequency change as f0 and further Δf (standardized) = Δf / (maximum value of Δf) so that the maximum value of Δf becomes 1. This graph is data when a gold (Au) film is formed as a mass part.

According to the graph of FIG. 8, when the mass portion formed on the vibrating arm is removed from the tip side, the frequency changes so as to increase sequentially, and the change in frequency becomes zero at substantially the central portion of the vibrating arm. Then, when the mass part is further removed toward the base end side, the frequency is changed so as to be sequentially lowered. Further, the amount of change in frequency is smaller as it is closer to the center of the vibrating arm.
Such a phenomenon is presumed to occur for the following reason. That is, the weight effect of the mass part is dominant on the tip end side of the vibrating arm with the vicinity of the central portion in the length direction of the vibrating arm as a boundary, and the frequency changes in the direction of increasing the frequency by removing the mass part. On the other hand, the thickness effect is dominant from the vicinity of the central portion in the length direction of the vibrating arm to the base end side, and the frequency changes in the direction of lowering by removing the mass portion. As described above, when the mass portion is made of gold, there is a boundary having a different frequency change direction at a substantially central portion in the length direction of the vibrating arm.

In the graph of FIG. 9, the vertical axis is the boundary position where the frequency change increases and decreases when the frequency is adjusted, the horizontal axis is the density of the constituent material constituting the mass part (10 ³ kg / m ³ ), and the mass part is configured. Each possible material is plotted. The boundary position is indicated by a ratio from the base end side of the vibrating arm, where L is the total length of the vibrating arm. For example, when the vertical axis is larger than 0.5L, there is a boundary position on the distal end side of the vibrating arm, and when the vertical axis is smaller than 0.5L, the boundary position is on the proximal end side of the vibrating arm. Show.

As shown in the graph of FIG. 9, there is a difference in the boundary position where the direction of frequency change differs depending on the density of the constituent material of the mass part formed on the vibrating arm. It can be seen that
For example, when the mass part is made of Au, the density is 19.3 (10 ³ kg / m ³ ), the boundary position is at a position of about 0.43 L from the base end of the vibrating arm, and the vibrating arm It is located in the base end side rather than the center of the length direction. Moreover, when it is composed of the mass part SiO ₂ , its density is 2.20 (10 ³ kg / m ³ ), which is smaller than the above-mentioned Au, and the boundary position is at a position of about 0.6 L from the starting end of the vibrating arm. Yes, located on the tip side of the center of the vibrating arm in the length direction.

  Thus, the inventor has found that there is a boundary where the direction of frequency change is different near the center of the length direction of the vibrating arm. Furthermore, the position of the boundary changes depending on the density of the constituent material of the mass part, and it has been found that the boundary position tends to move from the center of the vibrating arm to the tip side as the density decreases. And based on these detections, this inventor came to create this invention (this embodiment).

  As shown in FIG. 10, the mass portion 51 </ b> C is provided on the upper surface 281 of the vibrating arm 28. Such a mass portion 51C has a distal end side mass portion 51Ca provided at the distal end portion of the vibrating arm 28, and a proximal end side mass portion 51Cb provided closer to the proximal end side than the distal end side mass portion 51Ca. . Of these two mass parts 51Ca and 51Cb, the distal end side mass part 51Ca is a mass part for coarse frequency adjustment, and the proximal side mass part 51Cb is a mass part for fine frequency adjustment. Thus, by providing two mass parts having different applications, the frequency adjustment of the resonator element 2 can be performed efficiently and with high accuracy.

The front end side mass portion 51Ca has a portion made of a material having a density D (10 ³ kg / m ³ ) of D> 8.92. Examples of the material having such a density include Au, Ag, and Pt as shown in the graph of FIG. Thus, the tip side mass portion 51Ca having a portion made of a material with D> 8.92 has a large amount of frequency change due to removal at the tip portion of the vibrating arm 28, and the frequency of the vibrating piece 2 is coarse. It is most suitable as a mass part for adjustment.

The proximal end side mass part 51Cb is made of a material having a density D (10 ³ kg / m ³ ) of 2.20 ≦ D ≦ 8.92. As the material having such a density, as shown in the graph of FIG. 9, for example, a metal material such as Cu, Ni, Fe, Cr, Ti, Al, ZnO, TiO ₂ , SiO ₂ , Al ₂ O _3, etc. Examples thereof include metal oxides and nitrides such as AlN. As described above, in the base end side mass portion 51Cb made of a material satisfying 2.20 ≦ D ≦ 8.92, the boundary in which the frequency change direction is different is located on the tip side from the center in the length direction of the vibrating arm 28. To be.
Such a base end side mass portion 51 </ b> Cb is provided on the distal end side from the center in the length direction of the vibrating arm 28. Accordingly, the piezoelectric element 22 (the first electrode layer 222 and the second electrode layer 226) can be formed long up to the vicinity of the center (1/2 L) of the vibrating arm 28. Therefore, an increase in the CI value of the resonator element can be prevented, and the vibration characteristics of the resonator element 2 are excellent.

Further, the base end side mass part 51Cb is provided so as to include (straddle) a boundary in which the direction of frequency change is different. Accordingly, the frequency can be increased by removing the distal end side of the proximal end side mass portion 51Cb, and the frequency can be lowered by removing the proximal end side of the proximal end side mass portion 51Cb.
Here, the distal end side mass portion 51Ca and the proximal end side mass portion 51Cb are each made of the same constituent material as at least one of the layers constituting the piezoelectric element 22. Therefore, when the tip end side mass portion 51Ca has a portion made of a material with D> 8.92, and the base end side mass portion 51Cb is made of a material with 2.20 ≦ D ≦ 8.92. Has at least 1 layer composed of a material satisfying D> 8.92 and a layer composed of a material satisfying 2.20 ≦ D ≦ 8.92 in a plurality of layers constituting the piezoelectric element 22. Must be included one by one.

The piezoelectric element 22 is not particularly limited. For example, the first base layer 221 is made of Cr (D = 7.19), and the first electrode layer 222 is Au (D = 19.3). ), The piezoelectric layer 223 is made of ZnO (D = 5.68), the insulator layer 224 is made of SiO ₂ (D = 2.2), and the second underlayer 225 is made of Cr (D = 7.19) and the second electrode layer 226 made of Au (D = 19.3) can be used.

Then, for example, as shown in FIG. 10A, the tip side mass portion 51Ca is made up of a Cr layer (a layer corresponding to the first underlayer 221) and an Au layer (a layer corresponding to the first electrode layer 222). And the base end side mass part 51Cb is made of SiO ₂ (a layer corresponding to the insulator layer 224), the above-described configuration can be easily achieved. In addition, you may comprise proximal end side mass part 51Cb with ZnO or Cr. Further, the Cr layer is a base layer for improving the adhesion between the vibrating arm 28 and the Au layer, and may be omitted as necessary.

As another configuration of the piezoelectric element 22, for example, the first base layer 221 is made of Cr (D = 1.19), and the first electrode layer 222 is made of Au (D = 19.3). The piezoelectric layer 223 is made of ZnO (D = 5.68), the insulator layer 224 is made of SiO ₂ (D = 2.2), the second underlayer 225 is omitted, and the second The electrode layer 226 made of Al (D = 2.7) can be used.

  Then, for example, as shown in FIG. 10B, the tip side mass portion 51Ca includes a Cr layer (a layer corresponding to the first underlayer 221) and an Au layer (a layer corresponding to the first electrode layer 222). And the base end side mass portion 51Cb is made of a Cr layer (a layer corresponding to the first underlayer 221) and Al (a layer corresponding to the second electrode layer 226), The configuration described above can be easily achieved. The Cr layer is a base layer for improving the adhesion between the vibrating arm 28 and the Au layer, and may be omitted as necessary.

(Frequency adjustment method)
Next, a method for adjusting the frequency of the resonator element 2 according to this embodiment will be described. In the following, the frequency adjustment of the vibrating arm 28 will be described as a representative, but the frequency adjustment of the vibrating arms 29 and 30 is the same as the frequency adjustment of the vibrating arm 28.
The frequency adjustment method of the resonator element 2 includes: [1] a step of preparing the resonator element 2 (before frequency adjustment), [2] a rough frequency adjustment step by removing the distal end side mass portion 51Ca, and [3] a base end. A frequency fine adjustment step by removing the side mass portion 51Cb.

Hereafter, each process [1], [2], [3] is demonstrated one by one.
[1]
First, the resonator element 2 before frequency adjustment (unadjusted) is prepared.
At this time, on the vibrating arm 28, a distal end side mass portion 51Ca and a proximal end side mass portion 51Cb are provided. At this time, the frequency (resonance frequency) of the vibrating arm 28 is set to be lower than the target frequency (resonance frequency).

[2]
(Coarse adjustment)
First, a part or all of the front end side mass part 51Ca is removed as necessary by irradiation with energy rays. Note that the shape, part, and removal amount of the tip-side mass part 51Ca removed in this rough adjustment are appropriately set as necessary. For example, a part of the tip-side mass part 51Ca When removed by irradiation, the removed portion of the tip side mass portion 51Ca has a shape such as a line shape or a dot shape.
By such rough adjustment, the mass of the tip end side mass portion 51Ca can be reduced, and the frequency of the vibrating arm 28 is increased. The rough adjustment is performed so that the frequency (resonance frequency) of the vibrating arm 28 is slightly lower than the target frequency (resonance frequency) so that the frequency can be adjusted by fine adjustment described later.

[3]
(Tweak)
First, a part or all of the portion on the distal end side of the proximal end side mass portion 51Cb is removed by energy beam irradiation as necessary. By removing this portion, the frequency (resonance frequency) of the vibrating arm 28 can be slightly increased as described above. Then, the frequency (resonance frequency) of the vibrating arm 28 is matched with a predetermined value.
In addition, since the amount of change in frequency with respect to the removal amount of the proximal end side mass portion 51Cb decreases from the distal end side toward the central portion, the portion from the central portion is required when more precise frequency adjustment is required. It is effective to remove.

In addition, for example, there may be a case where the frequency of the vibrating arm 28 becomes higher than a predetermined value due to excessive removal of the distal end side of the proximal end side mass portion 51Cb. At this time, it is only necessary to remove a part or all of the proximal end side portion of the proximal end side mass portion 51Cb by irradiation with energy rays. By removing the portion, as described above, the frequency of the vibrating arm 28 can be slightly lowered, so that the frequency of the vibrating arm 28 can be adjusted to a predetermined value. Thus, according to the base end side mass part 51Cb, since the frequency of the vibrating arm 28 can be finely adjusted in either the direction of increasing or decreasing, the frequency can be adjusted with high accuracy. .
According to the fourth embodiment as described above, the same effects as those of the first embodiment described above can be obtained.
The resonator element of each embodiment as described above can be applied to various electronic devices, and the obtained electronic device has high reliability.

Here, an electronic device including the resonator element according to the invention will be described in detail with reference to FIGS.
FIG. 11 is a perspective view illustrating a configuration of a mobile (or notebook) personal computer to which an electronic device including the resonator element according to the invention is applied.
In this figure, a personal computer 1100 includes a main body portion 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display portion 100. The display unit 1106 is rotated with respect to the main body portion 1104 via a hinge structure portion. It is supported movably.
Such a personal computer 1100 has a built-in vibrator 1 that functions as a filter, a resonator, a reference clock, and the like.

FIG. 12 is a perspective view illustrating a configuration of a mobile phone (including PHS) to which an electronic device including the resonator element according to the invention is applied.
In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and the display unit 100 is disposed between the operation buttons 1202 and the earpiece 1204.
Such a cellular phone 1200 incorporates the vibrator 1 that functions as a filter, a resonator, and the like.

FIG. 13 is a perspective view illustrating a configuration of a digital still camera to which an electronic device including the resonator element according to the invention is applied. In this figure, connection with an external device is also simply shown.
Here, a normal camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an image sensor such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

A display unit is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD. The display unit is a finder that displays an object as an electronic image. Function.
A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

When the photographer confirms the subject image displayed on the display unit and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308.
In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication as necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.

Such a digital still camera 1300 incorporates a vibrator 1 that functions as a filter, a resonator, and the like.
In addition to the personal computer of FIG. 11 (mobile personal computer), the mobile phone of FIG. 12, and the digital still camera of FIG. Inkjet printers), laptop personal computers, televisions, video cameras, video tape recorders, car navigation devices, pagers, electronic notebooks (including those with communication functions), electronic dictionaries, calculators, electronic game devices, word processors, workstations, televisions Telephone, crime prevention TV monitor, electronic binoculars, POS terminal, medical equipment (for example, electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, electronic endoscope), fish detector, various measuring devices, instruments (E.g., vehicle, aircraft, Instruments of 舶), can be applied to a flight simulator or the like.

As described above, the resonator element, the method for manufacturing the resonator element, the vibrator, the resonator device, and the electronic apparatus of the present invention have been described based on the illustrated embodiment, but the present invention is not limited to this, and the configuration of each part is It can be replaced with any configuration having a similar function. Further, in the above-described embodiment, the example in which the energy adjustment is performed by irradiating the mass part with the energy beam is described. However, the present invention is not limited thereto, and the mass of the mass part may be reduced by ion etching, sand blasting, or wet etching. . In addition, any other component may be added to the present invention. Further, the present invention may be a combination of any two or more configurations (features) of the above embodiments.
For example, in the embodiment described above, the case where the resonator element has three vibrating arms has been described as an example. However, the number of vibrating arms may be one or two, or may be four or more. Good.
In addition, the resonator device of the present invention has a crystal oscillator (SPXO), a voltage controlled crystal oscillator (VCXO), a temperature compensated crystal oscillator (TCXO), and a crystal oscillator with a thermostat (OCXO) by connecting an oscillation circuit to the resonator element. In addition to piezoelectric oscillators, etc., it is applied to gyro sensors and the like.

  DESCRIPTION OF SYMBOLS 1 ... vibrator 2 ... vibration piece 21 ... vibration board 22 ... piezoelectric element 221 ... 1st foundation layer 222 ... 1st electrode layer 223 ... piezoelectric material layer 224 ... insulator layer 225 2nd base layer 226 2nd electrode layer 23 ... Piezoelectric element 231 1st base layer 232 1st electrode layer 233 ... Piezoelectric layer 234 ... Insulator layer 235 2nd base layer 236 2nd electrode layer 24 Piezoelectric element 241 1st base layer 242 1st electrode layer 243 ... Piezoelectric layer 244 ... Insulator layer 245 2nd base layer 246 2nd electrode layer 27 Base portion 271 Thin portion 272 Thick portion 28 Vibration arm 281 Top surface 282 Bottom surface 29 Vibration arm 291 Top surface 30 Vibration arm 301 Top surface 3 Package G 31 ... Base substrate 32 ... Frame member 33 ... Lid member 34a, 34b, 34c, 34d ... External terminal 35a ... Electrode 35b ... Electrode 36 ... Fixing material 37 ... Metal wire 38 ... Metal wire 41 ... Connection electrode 42 ... Connection electrode 43 ... Wiring 51 ... Mass part 511 ... First film part 512 ... Second film part 513 ... Third film part 514 ... Fourth film Part 515 ... 5th film part 516 ... 6th film part 51A ... Mass part 51B ... Mass part 51C ... Mass part 51Ca ... Tip side mass part 51Cb ... Base end side mass part 52 ... Mass part 521 ... 1st film part 522 ... 2nd film part 523 ... 3rd film part 524 ... 4th film part 525 ... 5th film part 526 ... 6th film part 52A ... Mass part 52B ... Mass part 53 ... Quantity part 531 ... 1st film part 532 ... 2nd film part 533 ... 3rd film part 534 ... 4th film part 535 ... 5th film part 536 ... 6th film part 53A ... Mass section 53B ... Mass section 100 ... Display section 1100 ... Personal computer 1102 ... Keyboard 1104 ... Main body section 1106 ... Display unit 1200 ... Mobile phone 1202 ... Operation buttons 1204 ... Earpiece 1206 Mouthpiece 1300 Digital still camera 1302 Case 1304 Light receiving unit 1306 Shutter button 1308 Memory 1312 Video signal output terminal 1314 Input / output terminal 1430 Television monitor 1440 Personal computer S .. Interior space

Claims (13)

A base provided on a plane including a first direction and a second direction orthogonal to the first direction;
A vibrating arm extending from the base in the first direction and bending and vibrating in a normal direction of the plane;
A piezoelectric element that is provided on the vibrating arm and flexibly vibrates the vibrating arm;
A mass part provided on the vibrating arm,
The piezoelectric element has at least a first electrode layer, a second electrode layer, and a piezoelectric layer located between the first electrode layer and the second electrode layer,
The mass part has at least one film part,
The film part is made of the same material as any one of the layers constituting the piezoelectric element ,
The thickness of the said mass part is below the thickness of the said piezoelectric element, The vibration piece characterized by the above-mentioned .   2. The resonator element according to claim 1, wherein the piezoelectric element includes an insulator layer positioned between the first electrode layer and the second electrode layer.   The resonator element according to claim 2, wherein the piezoelectric element has a base layer positioned between the vibrating arm and the first electrode layer. The mass portion includes a distal-end-side mass portion provided on the distal-end side of the vibrating arm, and a proximal-end-side mass portion provided closer to the proximal-end side than the distal-end-side mass portion. resonator element according to any one of claims 1 to 3. The base end side mass portion is provided in a region exceeding a half of the total length in the first direction from the base end of the vibrating arm and has a density of 2.20 (10 ³ kg / m ^3). The vibration piece according to claim 4 , wherein the vibration piece is made of a material of 8.92 (10 ³ kg / m ³ ) or less. 6. The resonator element according to claim 4, wherein the tip-side mass portion has a portion made of a material having a density greater than 8.92 (10 ³ kg / m ³ ). It said first electrode layer and the second electrode layer, resonator element according to any one of claims 1 to 6, characterized in that it is composed of different materials. The vibrating arm includes a first surface that is horizontal to the plane, and a second surface that faces the first surface,
The mass unit, the vibrating element according to any one of claims 1 to 7, characterized in that provided on the first surface and the second surface of at least one of the surfaces. The vibrating arm is disposed alongside more in the second direction, of claims 1, characterized in that two of said vibrating arms adjacent to the bending vibration in opposite directions 8 of any one Vibrating piece. A base formed on a plane including a first direction and a second direction orthogonal to the first direction;
A vibrating arm extending from the base in the first direction and bending and vibrating in a normal direction of the plane;
Provided on the vibrating arm, and having at least a first electrode layer, a second electrode layer, and a piezoelectric layer positioned between the first electrode layer and the second electrode layer, A method of manufacturing a resonator element having a piezoelectric element that flexibly vibrates a vibrating arm, and a mass portion provided on the vibrating arm,
The mass part is formed together with the piezoelectric element ,
The method for manufacturing a resonator element according to claim 1, wherein the thickness of the mass portion is equal to or less than the thickness of the piezoelectric element . A resonator element according to any one of claims 1 to 9 ,
And a package containing the resonator element. A resonator element according to any one of claims 1 to 9 ,
And an oscillation circuit connected to the resonator element. An electronic apparatus comprising the resonator element according to any one of claims 1 to 9.

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