JP2013219252A - Vibrating piece, vibrating device, and electronic apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vibrating piece and a vibrating device which can be manufactured in high yield and are excellent in reliability, and to provide a highly reliable electronic apparatus provided with the vibrating device.SOLUTION: A sensor element of the present invention comprises: a base part 21; a vibrating arm 22 extended from the base part 21; a drive part 51 which is provided on the vibrating arm 22 and has a first electrode layer 511, a second electrode layer 513, and a piezoelectric layer 512; wiring 62 which is pulled out from the second electrode layer 513 and has a portion 621 provided along a side surface of the piezoelectric layer 512; and a terminal which is provided on the base part 21 and is electrically connected to the second electrode layer 513 via the wiring 62.

Description

  The present invention relates to a resonator element, a vibration device, and an electronic apparatus.

Sensor elements that detect physical quantities such as angular velocity and acceleration are used, for example, for vehicle body control in vehicles, vehicle position detection in car navigation systems, vibration control correction (so-called camera shake correction) for digital cameras and video cameras, and the like. As such a sensor element, for example, a vibration gyro sensor (angular velocity sensor) is known (see, for example, Patent Document 1).
For example, the angular velocity sensor described in Patent Document 1 includes a tuning fork-shaped substrate having two arms, and a lower electrode layer, a piezoelectric layer, and an upper electrode layer are stacked in this order on each arm. . In the angular velocity sensor described in Patent Document 1, a part of the upper electrode layer is separated into an excitation electrode portion and a detection electrode portion.

In such an angular velocity sensor described in Patent Document 1, a voltage is applied between the excitation electrode portion and the lower electrode layer to vibrate each arm portion in a direction approaching or separating from each other. In this state, when an angular velocity about the axis along the extending direction of each arm portion is received, each arm portion bends in the direction orthogonal to the above-described vibration direction due to Coriolis force, and a charge corresponding to the amount of the bending. Is detected from the detection electrode section. Based on the detected charge, the angular velocity can be detected.
By the way, in such a conventional angular velocity sensor, when conducting with other parts by wire bonding, the bonding wire must be fixed to the upper electrode layer on the piezoelectric layer. At that time, since the adhesion between the piezoelectric layer and the upper electrode layer is not necessarily high, there is a problem that the upper electrode layer is peeled off or the reliability is lowered.

JP 2003-152232 A

  An object of the present invention is to provide a resonator element and a vibration device that can be manufactured with a high yield and are excellent in reliability, and to provide a highly reliable electronic apparatus including the vibration device.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.
[Application Example 1]
The resonator element according to the invention includes a base,
A vibrating arm extending from the base;
Provided on the vibrating arm, provided on a lower electrode layer, an upper electrode layer provided on a side opposite to the vibrating arm with respect to the lower electrode layer, and provided between the lower electrode layer and the upper electrode layer A piezoelectric element having a piezoelectric layer,
A wiring having a portion drawn from the upper electrode layer and provided along the side surface of the piezoelectric layer;
And a terminal provided on the base and electrically connected to the upper electrode layer through the wiring.

According to the resonator element configured as described above, it is possible to energize the upper electrode layer using a terminal installed directly on the base without using the piezoelectric layer. In addition, since the terminal installed directly on the base without using the piezoelectric layer is excellent in adhesion to the base, it can be prevented from being peeled off even if wire bonding is performed, and is excellent in reliability.
For this reason, it is possible to manufacture a vibrating device with a high yield and to provide a resonator element with excellent reliability.

[Application Example 2]
In the resonator element according to the aspect of the invention, it is preferable that the resonator element includes an insulator layer that is provided between a side surface of the piezoelectric layer and the lower electrode layer and the wiring and is made of a material different from that of the piezoelectric layer.
As a result, the wiring over the upper electrode layer on the piezoelectric layer can be performed while preventing a short circuit between the wiring and the lower electrode layer by the insulator layer. In addition, by appropriately selecting the constituent material of the insulator layer, it is possible to prevent the insulator layer from adversely affecting the characteristics of the resonator element.

[Application Example 3]
In the resonator element according to the aspect of the invention, the insulator layer has a portion provided on the upper electrode layer side with respect to the piezoelectric layer,
It is preferable that a part of the upper electrode layer is interposed between the portion and the piezoelectric layer.
Thereby, the electrode area of the upper electrode layer can be increased. Therefore, the electric field efficiency of the piezoelectric element can be improved.

[Application Example 4]
In the resonator element according to the aspect of the invention, the insulator layer has a portion provided on the upper electrode layer side with respect to the piezoelectric layer,
It is preferable that the upper electrode layer does not exist between the portion and the piezoelectric layer.
Thereby, at the time of manufacturing the resonator element, after forming the insulator layer, the upper electrode layer and the wiring can be formed in a lump. Therefore, the manufacturing process of the resonator element can be simplified.
[Application Example 5]
In the resonator element according to the aspect of the invention, it is preferable that the insulator layer is thicker than the lower electrode layer.
Thereby, the side surface of the lower electrode layer can be covered with the insulator layer easily and reliably.

[Application Example 6]
In the resonator element according to the aspect of the invention, it is preferable that the piezoelectric layer is provided so that a portion between the wiring and the lower electrode layer covers a side surface of the lower electrode layer.
Thereby, a short circuit between the wiring and the lower electrode can be prevented by the piezoelectric layer. Therefore, it is not necessary to separately form an insulator layer for preventing such a short circuit, and the manufacturing process can be simplified.

[Application Example 7]
In the resonator element according to the aspect of the invention, it is preferable that the side surface of the piezoelectric layer is inclined with respect to the main surface of the lower electrode layer.
Thereby, the disconnection of the wiring resulting from the level | step difference by a piezoelectric material layer and the damage to an insulator layer can be prevented. Moreover, the film-forming property at the time of forming wiring and an insulator layer can be improved.

[Application Example 8]
In the resonator element according to the aspect of the invention, it is preferable that the upper electrode layer and the wiring are made of the same material.
Thereby, the upper electrode layer and the wiring can be formed in a lump at the time of manufacturing the resonator element. Therefore, the manufacturing process of the resonator element can be simplified.
[Application Example 9]
In the resonator element according to the aspect of the invention, it is preferable that the upper electrode layer and the wiring are integrated.
Thereby, the upper electrode layer and the wiring can be formed in a lump at the time of manufacturing the resonator element. Therefore, the manufacturing process of the resonator element can be simplified.

[Application Example 10]
The vibrating device of the present invention includes the vibrating piece of the present invention.
Thereby, the vibration device excellent in reliability can be provided.
[Application Example 11]
An electronic apparatus according to the present invention includes the resonator element according to the present invention.
Thereby, an electronic device with excellent reliability can be provided.

It is a typical sectional view showing a schematic structure of a sensor device (vibration device) concerning a 1st embodiment of the present invention. It is a top view of the sensor device shown in FIG. It is a top view which shows the sensor element (vibration piece) with which the sensor device shown in FIG. 1 was equipped. It is the sectional view on the AA line in FIG. (A) is the BB sectional view taken on the line in FIG. 3, (b) is CC sectional view taken on the line in FIG. It is a figure for demonstrating an example of the manufacturing method of the sensor element shown in FIG. It is a figure for demonstrating an example of the manufacturing method of the sensor element shown in FIG. It is a figure for demonstrating the sensor element (vibration piece) which concerns on 2nd Embodiment of this invention. It is a figure for demonstrating the sensor element (vibration piece) which concerns on 3rd Embodiment of this invention. It is a figure for demonstrating the sensor element (vibration piece) which concerns on 4th Embodiment of this invention. It is a figure for demonstrating the sensor element (vibration piece) which concerns on 5th Embodiment of this invention. 1 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which an electronic apparatus of the present invention is applied. It is a perspective view which shows the structure of the mobile telephone (PHS is also included) to which the electronic device of this invention is applied. It is a perspective view which shows the structure of the digital still camera to which the electronic device of this invention is applied.

Hereinafter, a resonator element, a vibration device, and an electronic apparatus according to the invention will be described in detail based on embodiments shown in the accompanying drawings. Hereinafter, a case where the present invention is applied to a vibration piece of a sensor will be described as an example. However, the present invention is not limited to this, and can be applied to a vibration piece of an oscillator, for example.
<First Embodiment>
First, a first embodiment of the present invention will be described.
1 is a schematic cross-sectional view showing a schematic configuration of a sensor device (vibration device) according to a first embodiment of the present invention, FIG. 2 is a plan view of the sensor device shown in FIG. 1, and FIG. FIG. 4 is a cross-sectional view taken along the line AA in FIG. 3, and FIG. 5A is a cross-sectional view taken along the line BB in FIG. 3. FIG. 5B is a cross-sectional view taken along line CC in FIG.

  In the following, for convenience of explanation, in FIG. 1 to FIG. 5, the x axis, the y axis, and the z axis are illustrated as three axes orthogonal to each other, and the tip side of the illustrated arrow is the “+ side”. The base end side is defined as “− side”. A direction parallel to the x-axis is referred to as an “x-axis direction”, a direction parallel to the y-axis is referred to as a “y-axis direction”, and a direction parallel to the z-axis is referred to as a “z-axis direction”. The upper side in the middle is also called “upper”, and the −z side (lower side in FIG. 1) is also called “lower”.

(Sensor device)
A sensor device 1 shown in FIGS. 1 and 2 is a gyro sensor that detects angular velocity.
Such a sensor device 1 can be used for, for example, camera shake correction of an imaging device, posture detection of a vehicle or the like in a mobile navigation system using a GPS (Global Positioning System) satellite signal, posture control, and the like.
As shown in FIGS. 1 and 2, the sensor device 1 includes a sensor element 2, an IC chip 3, and a package 4 that houses the sensor element 2 and the IC chip 3. The IC chip 3 may be provided outside the package 4 or may be omitted depending on the device in which the sensor device 1 is incorporated.

Hereinafter, each part which comprises the sensor device 1 is demonstrated sequentially.
[Sensor element]
The sensor element 2 is a gyro sensor element (vibration piece) that detects an angular velocity around one axis.
As shown in FIG. 3, the sensor element 2 includes a vibrating body 20, drive units 51 to 54, detection units 55 and 56, and terminals 59 a to 59 f provided on the vibrating body 20.

<Vibrating body>
The vibrating body 20 includes a base portion 21 and two (one pair) vibrating arms 22 and 23.
The two vibrating arms 22 and 23 are provided to extend from the base portion 21 so as to be parallel to each other. More specifically, the two vibrating arms 22 and 23 extend from the base portion 21 in the y-axis direction (+ y side) and are provided side by side in the x-axis direction.
Each of the vibrating arms 22 and 23 has a longitudinal shape, and an end portion (base end portion) on the base portion 21 side is a fixed end, and an end portion (tip end portion) opposite to the base portion 21 is a free end.

Moreover, the cross section of each vibrating arm 22 and 23 is rectangular (see FIG. 4). Note that the cross-sectional shape of each vibrating arm 22, 23 is not limited to a quadrangle, and for example, by forming grooves along the y-axis direction on the upper and lower surfaces of each vibrating arm 22, 23, an H-shape It may be done.
Note that, if necessary, a mass portion (hammer head) having a larger cross-sectional area (width) than the base end portion may be provided at each distal end portion of the vibrating arms 22 and 23. In this case, the vibrating body 20 can be made smaller, and the resonance frequency of the vibrating arms 22 and 23 can be further lowered.
Further, an adjustment film (weight) for adjusting the resonance frequency of the vibrating arms 22 and 23 may be provided at the distal ends of the vibrating arms 22 and 23.

The constituent material of the vibrator 20 is not particularly limited as long as it can exhibit desired vibration characteristics, and various piezoelectric materials and various non-piezoelectric materials can be used.
For example, the piezoelectric material constituting the vibrating body 20 includes quartz, lithium tantalate, lithium niobate, lithium borate, barium titanate, and the like. In particular, quartz (X cut plate, AT cut plate, Z cut plate, etc.) is preferable as the piezoelectric material constituting the vibrating body 20. If the vibrating body 20 is made of quartz, the vibration characteristics (particularly frequency temperature characteristics) of the vibrating body 20 can be made excellent. Moreover, the vibrating body 20 can be formed with high dimensional accuracy by etching.

Further, examples of the non-piezoelectric material constituting the vibrating body 20 include silicon and quartz. In particular, silicon is preferable as the non-piezoelectric material constituting the vibrating body 20. When the vibrating body 20 is made of silicon, the vibrating body 20 having excellent vibration characteristics can be realized at a relatively low cost. In addition, the vibrator 20 can be formed with high dimensional accuracy by etching using a known fine processing technique.
Such a vibrating arm 22 of the vibrating body 20 is provided with a pair of driving units 51 and 52 and a detecting unit 55. Similarly, the vibrating arm 23 has a pair of driving units 53 and 54 and a detecting unit 56. Is provided.

In the present embodiment, an insulator layer 24 is provided on the upper surface of the vibrating body 20 as shown in FIG. Thereby, the short circuit between each part of the drive parts 51-54 and the detection parts 55 and 56 can be prevented.
The insulator layer 24 is made of, for example, SiO ₂ (silicon oxide), Al ₂ O ₃ (aluminum oxide), AlN (aluminum nitride), SiN (silicon nitride), or the like. The method for forming the insulator layer 24 is not particularly limited, and a known film formation method can be used. For example, when the vibrating body 20 is made of silicon, the insulator layer 24 made of SiO ₂ can be formed by thermally oxidizing the upper surface of the vibrating body 20.

Hereinafter, the drive units 51 to 54 and the detection units 55 and 56 will be sequentially described in detail.
"Drive part"
First, the drive parts 51-54 are demonstrated.
Each of the pair of drive units 51 and 52 is a piezoelectric element that flexures and vibrates the vibrating arm 22 in the x-axis direction. Similarly, each of the pair of drive units 53 and 54 is a piezoelectric element that causes the vibrating arm 23 to bend and vibrate in the x-axis direction.

The pair of drive units 51 and 52 are provided with a drive unit 51 on one side (right side in FIG. 3) and driven on the other side (left side in FIG. 3) in the width direction (x-axis direction) of the vibrating arm 22. A part 52 is provided.
Similarly, the pair of drive units 53 and 54 is provided with the drive unit 53 on one side (right side in FIG. 3) and the other side (left side in FIG. 3) in the width direction (x-axis direction) of the vibrating arm 23. A drive unit 54 is provided.

In the present embodiment, the drive units 51 and 52 are mainly provided in the proximal end portion of the vibrating arm 22. Similarly, the drive units 53 and 54 are mainly provided in the proximal end portion of the vibrating arm 23.
And each of the drive parts 51-54 is comprised so that it may expand-contract in a y-axis direction by electricity supply.
More specifically, as shown in FIG. 4, the drive unit 51 is provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 511 (lower electrode layer) and the first electrode layer 511. It has a second electrode layer 513 (upper electrode layer) and a piezoelectric layer 512 provided between the first electrode layer 511 and the second electrode layer 513. In other words, the drive unit 51 is configured by laminating the first electrode layer 511, the piezoelectric layer (piezoelectric thin film) 512, and the second electrode layer 513 on the vibrating arm 22 in this order.

  Similarly, the drive unit 52 is configured by laminating a first electrode layer 521, a piezoelectric layer (piezoelectric thin film) 522, and a second electrode layer 523 on the vibrating arm 22 in this order. The drive unit 53 is configured by laminating a first electrode layer 531, a piezoelectric layer (piezoelectric thin film) 532, and a second electrode layer 533 in this order on the vibrating arm 23. The drive unit 54 is configured by laminating a first electrode layer 541, a piezoelectric layer (piezoelectric thin film) 542, and a second electrode layer 543 on the vibrating arm 23 in this order.

  By using such driving units 51 to 54, even if the vibrating arms 22 and 23 themselves do not have piezoelectricity, or the vibrating arms 22 and 23 themselves have piezoelectricity, the polarization axis or crystal Even when the axial direction is not suitable for bending vibration in the x-axis direction, the vibrating arms 22 and 23 can be flexibly vibrated (driving vibration) in the x-axis direction relatively easily and efficiently. In addition, since the vibrating arms 22 and 23 are not subject to the presence of piezoelectricity and the direction of the polarization axis and the crystal axis, the range of selection of the constituent materials of the vibrating arms 22 and 23 is widened. Therefore, the vibrating body 20 having desired vibration characteristics can be realized relatively easily.

Hereinafter, each layer which comprises the drive part 51 is demonstrated sequentially. In addition, about the drive parts 52-53, since it is the same as that of the drive part 51, the description is abbreviate | omitted.
The first electrode layer 511 includes, for example, gold (Au), gold alloy, platinum (Pt), aluminum (Al), aluminum alloy, silver (Ag), silver alloy, chromium (Cr), chromium alloy, copper (Cu ), Molybdenum (Mo), niobium (Nb), tungsten (W), iron (Fe), titanium (Ti), cobalt (Co), zinc (Zn), zirconium (Zr), etc., ITO, ZnO It can form with transparent electrode materials, such as.

Among them, as a constituent material of the first electrode layer 511, it is preferable to use a metal (gold, gold alloy) or platinum mainly made of gold, and a metal (especially gold) mainly made of gold. More preferred.
Au is suitable as an electrode material because it has excellent conductivity (low electrical resistance) and excellent resistance to oxidation. Further, Au can be easily patterned by etching as compared with Pt. Furthermore, the orientation of the piezoelectric layer 512 can be improved by forming the first electrode layer 511 from gold or a gold alloy.

The average thickness of the first electrode layer 511 is not particularly limited, but is preferably about 1 to 300 nm, and more preferably 10 to 200 nm, for example. As a result, the first electrode layer 511 has excellent conductivity as described above while preventing the first electrode layer 511 from adversely affecting the drive characteristics of the drive unit 51 and the vibration characteristics of the vibrating arm 22. It can be.
Note that a base layer having a function of preventing the first electrode layer 511 from peeling from the vibrating arm 22 may be provided between the first electrode layer 511 and the vibrating arm 22.
Such an underlayer is made of, for example, Ti, Cr or the like.

On the first electrode layer 511, a piezoelectric layer 512 is provided.
Examples of the constituent material (piezoelectric material) of the piezoelectric layer 512 include zinc oxide (ZnO), aluminum nitride (AlN), lithium tantalate (LiTaO ₃ ), lithium niobate (LiNbO ₃ ), and potassium niobate (KNbO). ₃ ), lithium tetraborate (Li ₂ B ₄ O ₇ ), barium titanate (BaTiO ₃ ), PZT (lead zirconate titanate) and the like.

In particular, it is preferable to use PZT as a constituent material of the piezoelectric layer 512. PZT (lead zirconate titanate) is excellent in c-axis orientation. Therefore, the CI value of the sensor element 2 can be reduced by configuring the piezoelectric layer 512 using PZT as a main material. Moreover, these materials can be formed into a film by the reactive sputtering method.
The average thickness of the piezoelectric layer 512 is preferably 50 to 3000 nm, and more preferably 200 to 2000 nm. Accordingly, it is possible to improve the drive characteristics of the drive unit 51 while preventing the piezoelectric layer 512 from adversely affecting the vibration characteristics of the vibrating arm 22.

A second electrode layer 513 is provided on the piezoelectric layer 512 (on the side opposite to the vibrating arm 22 of the piezoelectric layer 512).
The second electrode layer 513 includes, for example, gold (Au), gold alloy, platinum (Pt), aluminum (Al), aluminum alloy, silver (Ag), silver alloy, chromium (Cr), chromium alloy, copper (Cu ), Molybdenum (Mo), niobium (Nb), tungsten (W), iron (Fe), titanium (Ti), cobalt (Co), zinc (Zn), zirconium (Zr), and other metal materials, ITO, ZnO, etc. The transparent electrode material can be used.
The average thickness of the second electrode layer 513 is not particularly limited, but is preferably about 1 to 300 nm, and more preferably 10 to 200 nm, for example. Thus, the second electrode layer 513 is made excellent in conductivity while preventing the second electrode layer 513 from adversely affecting the drive characteristics of the drive unit 51 and the vibration characteristics of the vibrating arm 22. it can.

A function of protecting the piezoelectric layer 512 and preventing a short circuit between the first electrode layer 511 and the second electrode layer 513 between the piezoelectric layer 512 and the second electrode layer 513. An insulating layer (insulating protective layer) may be provided.
The insulator layer is made of, for example, SiO ₂ (silicon oxide), Al ₂ O ₃ (aluminum oxide), AlN (aluminum nitride), SiN (silicon nitride), or the like.
In addition, the second electrode layer 513 is separated from the piezoelectric layer 512 (or the insulating layer when the above-described insulating layer is provided) between the piezoelectric layer 512 and the second electrode layer 513. An underlayer having a function of preventing the above may be provided.
Such an underlayer is made of, for example, Ti, Cr or the like.

  In the drive unit 51 configured as described above, when a voltage is applied between the first electrode layer 511 and the second electrode layer 513, an electric field in the z-axis direction is generated in the piezoelectric layer 512, and the piezoelectric element The body layer 512 expands or contracts in the y-axis direction. Similarly, in the driving unit 52, when a voltage is applied between the first electrode layer 521 and the second electrode layer 523, an electric field in the z-axis direction is generated in the piezoelectric layer 522, and the piezoelectric layer 522. Expands or contracts in the y-axis direction.

At this time, when one of the drive units 51 and 52 is extended in the y-axis direction, the other drive unit is contracted in the y-axis direction, whereby the vibrating arm 22 is flexibly vibrated in the x-axis direction. be able to.
Similarly, the vibrating arm 23 can be bent and vibrated in the x-axis direction by the driving units 53 and 54.

In the present embodiment, the first electrode layer 511 of the drive unit 51 and the first electrode layer 541 of the drive unit 54 are electrically connected to the terminals 59a provided on the base 21 shown in FIG. ing. In addition, the second electrode layer 513 of the drive unit 51 and the second electrode layer 543 of the drive unit 54 are electrically connected to terminals 59b provided on the base 21 shown in FIG. Further, the first electrode layer 521 of the driving unit 52 and the first electrode layer 531 of the driving unit 53 are electrically connected to terminals 59c provided on the base 21 shown in FIG. In addition, the second electrode layer 523 of the driving unit 52 and the second electrode layer 533 of the driving unit 53 are electrically connected to terminals 59d provided on the base 21 shown in FIG.
Therefore, by applying a voltage between the terminals 59a and 59d and the terminals 59b and 59c while setting the terminals 59a and 59d to the same potential, and the terminals 59b and 59c to the same potential, the vibrating arm 22 is provided. , 23 can be bent and vibrated in the x-axis direction so as to approach or separate from each other.

Here, the wiring for electrically connecting the drive unit 51 and the terminals 59a and 59b will be described. In addition, about the wiring which electrically connects the drive part 54 and the terminals 59a and 59b, and the wiring which electrically connects the drive parts 52 and 53 and the terminals 59c and 59d, the drive part 51 and the terminals 59a and 59b. Are the same as the wiring that electrically connects the two, and the description thereof is omitted.
As shown in FIG. 5A, the wiring 62 electrically connected to the terminal 59 b is drawn out from the second electrode layer 513 of the driving unit 51. Although not shown, a wiring electrically connected to the terminal 59a is drawn out from the first electrode layer 511 of the driving unit 51.

The wiring 62 has a portion 621 provided along the side surface of the piezoelectric layer 512. Thereby, the wiring over the second electrode layer 513 on the piezoelectric layer 512 can be performed.
An insulator layer 61 is provided between the side surfaces of the piezoelectric layer 512 and the first electrode layer 511 and the wiring 62. Thereby, a short circuit between the wiring 62 and the first electrode layer 511 can be prevented.

The insulator layer 61 is made of a material different from that of the piezoelectric layer 512. Thereby, by appropriately selecting the constituent material of the insulator layer 61, it is possible to prevent the insulator layer 61 from adversely affecting the characteristics of the sensor element 2.
In particular, when the dielectric constant of the piezoelectric layer 512 is εp and the dielectric constant of the insulator layer 61 is εi,
It is preferable to satisfy the relationship εp> εi.
Thereby, since the dielectric constant of the insulator layer 61 is smaller than the dielectric constant of the piezoelectric layer 512, the parasitic capacitance between the wiring 62 and the first electrode layer 511 can be reduced. Therefore, it is possible to prevent the wiring 62 from adversely affecting the characteristics of the sensor element 2. Specifically, it is possible to prevent a decrease in driving force of the driving unit 51 due to such parasitic capacitance.

The constituent material of the insulator layer 61 is not particularly limited as long as it has an insulating property, and includes an insulating inorganic compound and a resin material, and those that satisfy the relationship of the dielectric constant as described above. Preferably, for example, when the piezoelectric layer 512 is made of PZT, TiO ₂ , HfO ₂ , SiO ₂ , Al ₂ O ₃ , SiN, SiC, or the like can be used, and the piezoelectric layer 512 is ZnO or When composed of AlN, SiO ₂ , Al ₂ O _3, or the like can be used.
Further, the difference between the relative dielectric constant εpr of the piezoelectric layer 512 and the relative dielectric constant εir of the insulator layer 61 is preferably 1 or more, and more preferably 2 or more.

  As described above, the terminal 59 b provided on the base 21 is electrically connected to the second electrode layer 513 through the wiring 62, so that it is directly installed on the base 21 without using the piezoelectric layer 512. The second electrode layer 513 can be energized using the terminal 59b. Further, since the terminal 59b installed directly on the base 21 without the piezoelectric layer 512 is excellent in adhesion to the base 21, it can be prevented from being peeled off even when wire bonding is performed. Excellent in properties.

The insulator layer 61 has a portion 611 provided on the second electrode layer 513 side with respect to the piezoelectric layer 512. A part of the second electrode layer 513 is interposed between the portion 611 and the piezoelectric layer 512. Thereby, the electrode area of the second electrode layer 513 can be increased. Therefore, the electric field efficiency of the drive unit 51 can be improved. As a result, the driving force of the drive unit 51 can be increased.
The insulator layer 61 is preferably thicker than the first electrode layer 511. Thereby, the side surface of the first electrode layer 511 can be covered with the insulator layer 61 easily and reliably.

"Detection unit"
Next, the detection units 55 and 56 will be described.
The detection unit 55 is a piezoelectric element that detects bending vibration (so-called out-of-plane vibration) in the z-axis direction of the vibrating arm 22. Similarly, the detection unit 56 is a piezoelectric element that detects bending vibration of the vibrating arm 23 in the z-axis direction.

The detection unit 55 is provided at the center of the vibrating arm 22 in the width direction (x-axis direction). Similarly, the detection unit 56 is provided at the center of the vibrating arm 23 in the width direction (x-axis direction).
In the present embodiment, the detection unit 55 is mainly provided in a portion on the proximal end side of the vibrating arm 22. Similarly, the detection unit 56 is mainly provided in the proximal end portion of the vibrating arm 23.
The detection unit 55 is provided between the pair of drive units 51 and 52 described above, and similarly, the detection unit 56 is provided between the pair of drive units 53 and 54 described above.
The detection units 55 and 56 are each configured to output charges by expanding and contracting in the y-axis direction.

Specifically, as shown in FIG. 4, the detection unit 55 is provided on the side opposite to the vibrating arm 22 with respect to the first electrode layer 551 (lower electrode layer) and the first electrode layer 551. It has a second electrode layer 553 (upper electrode layer) and a piezoelectric layer 552 provided between the first electrode layer 551 and the second electrode layer 553. In other words, the detection unit 55 is configured by laminating the first electrode layer 551, the piezoelectric layer (piezoelectric thin film) 552, and the second electrode layer 553 on the vibrating arm 22 in this order.
Similarly, the detection unit 56 is configured by laminating a first electrode layer 561, a piezoelectric layer (piezoelectric thin film) 562, and a second electrode layer 563 on the vibrating arm 23 in this order.

  By using such detection units 55 and 56, even if the vibrating arms 22 and 23 themselves do not have piezoelectricity, or even if the vibrating arms 22 and 23 themselves have piezoelectricity, their polarization axes and crystals Even when the direction of the axis is not suitable for detection of bending vibration in the z-axis direction, bending vibration in the z-axis direction of the vibrating arms 22 and 23 can be detected relatively easily and efficiently. . In addition, since the vibrating arms 22 and 23 are not subject to the presence of piezoelectricity and the direction of the polarization axis and the crystal axis, the range of selection of the constituent materials of the vibrating arms 22 and 23 is widened. Therefore, the vibrating body 20 having desired vibration characteristics can be realized relatively easily.

The first electrode layers 551 and 561 can be made of the same material as the first electrode layers of the drive units 51 to 54 described above.
The first electrode layers 551 and 561 can be configured to have the same thickness as the first electrode layers of the drive units 51 to 54 described above.
Further, the first electrode layers 551 and 561 can be collectively formed in the same process as the first electrode layers of the driving units 51 to 54 described above.

The piezoelectric layers 552 and 562 can be made of the same material as the piezoelectric layers of the drive units 51 to 54 described above.
In addition, the piezoelectric layers 552 and 562 can be configured to have the same thickness as the piezoelectric layers of the driving units 51 to 54 described above.
In addition, the piezoelectric layers 552 and 562 can be collectively formed in the same process as the piezoelectric layers of the driving units 51 to 54 described above.

The second electrode layers 553 and 563 can be made of the same material as the second electrode layers of the driving units 51 to 54 described above.
Further, the second electrode layers 553 and 563 can be configured with the same thickness as the second electrode layers of the driving units 51 to 54 described above.
Further, the second electrode layers 553 and 563 can be collectively formed in the same process as the second electrode layers of the driving units 51 to 54 described above.

When the vibrating arm 22 bends in the z-axis direction, the detection unit 55 configured in this way expands or contracts in the y-axis direction and outputs an electric charge. As a result, the detection unit 55 outputs a charge along with bending vibration of the vibrating arm 22 in the z-axis direction.
Similarly, the detection unit 56 outputs electric charges along with bending vibration of the vibrating arm 23 in the z-axis direction.
In the present embodiment, the first electrode layer 551 of the detection unit 55 and the second electrode layer 563 of the detection unit 56 are electrically connected to the terminal 59f provided on the base 21 shown in FIG. Further, the second electrode layer 553 of the detection unit 55 and the first electrode layer 561 of the detection unit 56 are electrically connected to a terminal 59e provided on the base 21 shown in FIG.
Therefore, when the vibrating arms 22 and 23 bend and vibrate in the z-axis direction to the opposite sides, a potential difference is generated between the terminal 59e and the terminal 59f along with the bending vibration.

Here, the wiring for electrically connecting the detection unit 55 and the terminals 59e and 59f will be described. Note that the wiring that electrically connects the detection unit 56 and the terminals 59e and 59f is the same as the wiring that electrically connects the detection unit 55 and the terminals 59e and 59f, and a description thereof will be omitted.
As shown in FIG. 5B, a wiring 64 electrically connected to the terminal 59f is drawn out from the second electrode layer 553 of the detection unit 55. Although not shown, a wiring electrically connected to the terminal 59e is drawn out from the first electrode layer 551 of the detection unit 55.
The wiring 64 has a portion 641 provided along the side surface of the piezoelectric layer 552. Thereby, the wiring over the second electrode layer 553 on the piezoelectric layer 552 can be performed.

In addition, an insulator layer 63 is provided between the side surfaces of the piezoelectric layer 552 and the first electrode layer 551 and the wiring 64. Thereby, a short circuit between the wiring 64 and the first electrode layer 551 can be prevented.
The insulator layer 63 is made of a material different from that of the piezoelectric layer 552. Accordingly, by appropriately selecting the constituent material of the insulator layer 63, it is possible to prevent the insulator layer 63 from adversely affecting the characteristics of the sensor element 2.

In particular, when the dielectric constant of the piezoelectric layer 552 is εp and the dielectric constant of the insulator layer 63 is εi,
It is preferable to satisfy the relationship εp> εi.
Thereby, since the dielectric constant of the insulator layer 63 is smaller than the dielectric constant of the piezoelectric layer 552, the parasitic capacitance between the wiring 64 and the first electrode layer 551 can be reduced. Therefore, it is possible to prevent the wiring 64 from adversely affecting the characteristics of the sensor element 2. Specifically, a decrease in detection sensitivity of the detection unit 55 due to such parasitic capacitance can be prevented.
The constituent material of the insulator layer 63 is not particularly limited as long as it has insulating properties, and the same material as the constituent material of the insulator layer 61 described above can be used.
Further, the difference between the relative dielectric constant εpr of the piezoelectric layer 552 and the relative dielectric constant εir of the insulator layer 63 is preferably 1 or more, and more preferably 2 or more.

  As described above, the terminal 59 f provided on the base 21 is electrically connected to the second electrode layer 553 via the wiring 64, so that it is directly installed on the base 21 without the piezoelectric layer 552. The second electrode layer 553 can be energized using the terminal 59f thus formed. In addition, since the terminal 59f installed directly on the base portion 21 without using the piezoelectric layer 552 has excellent adhesion to the base portion 21, it can be prevented from being peeled off even when wire bonding is performed. Excellent in properties.

The insulator layer 63 has a portion 631 provided on the second electrode layer 553 side with respect to the piezoelectric layer 552. A part of the second electrode layer 553 is interposed between the portion 631 and the piezoelectric layer 552. Thereby, the electrode area of the second electrode layer 553 can be increased. Therefore, the electric field efficiency of the detection unit 55 can be improved. As a result, the detection sensitivity of the detection unit 55 can be increased.
The insulator layer 63 is preferably thicker than the first electrode layer 551. Thereby, the side surface of the first electrode layer 551 can be covered with the insulator layer 63 easily and reliably.

In the sensor element 2 configured as described above, by applying a voltage between the terminals 59a and 59d and the terminals 59b and 59c, the vibrating arms 22 and 23 are moved toward and away from each other in the x-axis direction. Bend vibration (drive vibration).
If the angular velocity ω about the y-axis is applied to the sensor element 2 in the state where the vibrating arms 22 and 23 are driven and vibrated in this way, the vibrating arms 22 and 23 bend in the opposite direction in the z-axis direction due to Coriolis force. Vibrates (detects vibration).
The angular velocity ω applied to the sensor element 2 can be obtained by detecting the charges generated in the detection units 55 and 56 by the detection vibration of the vibrating arms 22 and 23 through the terminals 59e and 59f.

The sensor element 2 as described above can be manufactured by the following manufacturing method.
Hereinafter, an example of a method for manufacturing the sensor element 2 will be described with reference to FIGS.
6 and 7 are diagrams for explaining an example of a manufacturing method of the sensor element shown in FIG. In the following, for convenience of explanation, the steps related to the drive unit 51, the insulator layer 61, and the wiring 62 will be described representatively.
The manufacturing method of the sensor element 2 includes: [A] a first step of forming the first electrode layer 511, the piezoelectric layer 512, and the second electrode layer 513; and [B] a second step of forming the insulator layer 61. And the third step of forming the [C] wiring 62.

Hereinafter, each process will be described in detail.
[A] First step -A1-
First, as shown in FIG. 6A, the conductor layer 202 is formed on the substrate 201.
The substrate 201 becomes the vibrating body 20 by being processed in a later process, and is made of the same material as the constituent material of the vibrating body 20 described above.
Note that the substrate 201 forms an insulating layer for forming the insulator layer 24 as necessary before forming the conductor layer 202.

The conductor layer 202 is processed in a later step to become the first electrode layer 511, and is made of the same material as the constituent material of the first electrode layer 511 described above.
The method for forming the conductor layer 202 is not particularly limited. For example, dry plating methods such as vacuum deposition, sputtering (low temperature sputtering), ion plating, etc., wet plating methods such as electrolytic plating and electroless plating, and thermal spraying methods. And conductor foil bonding.

-A2-
Next, as shown in FIG. 6B, the piezoelectric layer 203 is formed on the conductor layer 202.
The piezoelectric layer 203 becomes a piezoelectric layer 512 by being processed in a later step, and is made of the same material as the constituent material of the piezoelectric layer 512 described above.
A method for forming the piezoelectric layer 203 is not particularly limited, and for example, a vapor deposition method such as plasma CVD can be used.

-A3-
Next, as shown in FIG. 6C, a conductor layer 204 is formed on the piezoelectric layer 203.
The conductor layer 204 is processed into a second electrode layer 513 by being processed in a later process, and is made of the same material as the constituent material of the second electrode layer 513 described above.
As a method for forming the conductor layer 204, a method similar to the method for forming the conductor layer 202 described above can be used.

-A4-
After sequentially laminating the conductor layer 202, the piezoelectric layer 203, and the conductor layer 204 in this way, the laminated body composed of the conductor layer 202, the piezoelectric layer 203, and the conductor layer 204 is etched, and as shown in FIG. In this manner, the first electrode layer 511, the piezoelectric layer 512, and the second electrode layer 513 are formed.
Such etching is not particularly limited, and examples thereof include reactive ion etching (RIE) and dry etching using CF ₄ .
In the etching, a mask formed by photolithography can be used.

[B] Second Step Next, as shown in FIG. 7B, an insulator layer 61 is formed.
A method for forming the insulator layer 61 is not particularly limited, but for example, a vapor deposition method such as plasma CVD can be used. In addition, etching using a mask formed by photolithography can be used.

[C] Third Step Next, as shown in FIG. 7C, the wiring 62 is formed.
A method for forming the wiring 62 is not particularly limited. For example, dry plating methods such as vacuum deposition, sputtering (low temperature sputtering), ion plating, etc., wet plating methods such as electrolytic plating and electroless plating, thermal spraying methods, and conductive foils. And the like. In addition, etching using a mask formed by photolithography can be used.
Thereafter, the vibration body 20 is obtained by processing the substrate 201 by etching.

Such an etching method is not particularly limited. For example, one or two of physical etching methods such as plasma etching, reactive ion etching, beam etching, and light-assisted etching, and chemical etching methods such as wet etching are used. A combination of more than one species can be used. In the etching as described above, for example, a mask formed by a photolithography method can be used.
According to the method for manufacturing the sensor element 2 as described above, since the second electrode layer 513 is formed before the formation of the insulator layer 61, the electrode area of the second electrode layer 513 can be increased. Therefore, the electric field efficiency of the obtained drive unit 51 can be improved.

[IC chip]
The IC chip 3 shown in FIGS. 1 and 2 is an electronic component having a function of driving the sensor element 2 described above and a function of detecting an output (sensor output) from the sensor element 2.
Although not shown, such an IC chip 3 includes a drive circuit that drives the sensor element 2 and a detection circuit that detects an output from the sensor element 2.
The IC chip 3 is provided with a plurality of connection terminals 31.

[package]
As shown in FIGS. 1 and 2, the package 4 includes a base member 41 (base) having a concave portion that opens upward, and a lid member 42 (lid) provided so as to cover the concave portion of the base member 41. Prepare. Thereby, an internal space in which the sensor element 2 and the IC chip 3 are accommodated is formed between the base member 41 and the lid member 42.
The base member 41 includes a flat plate body 411 (plate portion) and a frame body 412 (frame portion) joined to the outer peripheral portion of the upper surface of the plate body 411.
Such a base member 41 is made of, for example, an aluminum oxide sintered body, crystal, glass, or the like.

As shown in FIG. 1, the upper surface of the base member 41 (the surface covered with the lid member 42) is covered with a bonding member 81 such as an adhesive that includes an epoxy resin, an acrylic resin, or the like. The base 21 of the sensor element 2 is joined. Thereby, the sensor element 2 is supported and fixed to the base member 41.
Further, the above-described IC chip 3 is bonded to the upper surface of the base member 41 by a bonding member 82 such as an adhesive configured to include, for example, an epoxy resin, an acrylic resin, or the like. Thereby, the IC chip 3 is supported and fixed to the base member 41.

Further, as shown in FIGS. 1 and 2, a plurality of internal terminals 71 and a plurality of internal terminals 72 are provided on the upper surface of the base member 41.
The terminals 59a to 59f of the sensor element 2 described above are electrically connected to the plurality of internal terminals 71 via, for example, wiring configured by bonding wires.
The plurality of internal terminals 71 are electrically connected to the plurality of internal terminals 72 via wiring (not shown).
In addition, the plurality of connection terminals 31 of the IC chip 3 described above are electrically connected to the plurality of internal terminals 72 via, for example, wiring configured by bonding wires.

On the other hand, as shown in FIG. 1, a plurality of external terminals 73 that are used when mounted on a device (external device) in which the sensor device 1 is incorporated are provided on the lower surface of the base member 41 (the bottom surface of the package 4). ing.
The plurality of external terminals 73 are electrically connected to the internal terminals 72 described above via internal wiring (not shown). Thereby, the IC chip 3 and the plurality of external terminals 73 are electrically connected.
Each of the internal terminals 71 and 72 and the external terminals 73 is made of a metal film in which a film of nickel (Ni), gold (Au) or the like is laminated on a metallized layer of tungsten (W) or the like by plating or the like. Become.

A lid member 42 is airtightly joined to such a base member 41. Thereby, the inside of the package 4 is hermetically sealed.
The lid member 42 is made of, for example, the same material as the base member 41 or a metal such as Kovar, 42 alloy, stainless steel, or the like.
The joining method of the base member 41 and the lid member 42 is not particularly limited. For example, a joining method using an adhesive composed of a brazing material, a curable resin, or the like, a welding method such as seam welding, laser welding, or the like is used. be able to.
Such bonding is performed under reduced pressure or in an inert gas atmosphere, whereby the inside of the package 4 can be maintained in a reduced pressure state or an inert gas sealed state.
According to the sensor element 2 provided in the sensor device 1 according to the first embodiment as described above, it can be manufactured with a high yield and can exhibit excellent reliability.
Further, according to the sensor device 1 including the sensor element 2 as described above, the reliability is excellent.

Second Embodiment
Next, a second embodiment of the present invention will be described.
FIG. 8 is a diagram for explaining a sensor element (vibration piece) according to the second embodiment of the present invention.
The sensor element according to the present embodiment is the same as the sensor element according to the first embodiment described above except that the configuration relating to the wiring of the drive unit and the detection unit is different.
In the following description, the sensor element of the second embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted. Moreover, in FIG. 8, the same code | symbol is attached | subjected about the structure similar to embodiment mentioned above. 8A is a cross-sectional view corresponding to FIG. 5A, and FIG. 8B is a cross-sectional view corresponding to FIG. 5B.

As shown in FIG. 8, the sensor element of the present embodiment includes a drive unit 51 </ b> A and a detection unit 55 </ b> A provided on the vibrating arm 22.
As shown in FIG. 8A, the drive unit 51A includes a first electrode layer 511A (lower electrode layer) and a second electrode provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 511A. The electrode layer 513A (upper electrode layer) and the piezoelectric layer 512A provided between the first electrode layer 511A and the second electrode layer 513A are provided.
A wiring 62A is drawn out to the second electrode layer 513A of the driving unit 51A.
The wiring 62A has a portion provided along the side surface of the piezoelectric layer 512A.

An insulating layer 61A is provided between the side surfaces of the piezoelectric layer 512A and the first electrode layer 511A and the wiring 62A.
In the present embodiment, the side surface of the piezoelectric layer 512A is inclined so as to alleviate the level difference caused by the piezoelectric layer 512A. Thereby, disconnection of the wiring 62A and damage to the insulating layer 61A due to a step due to the piezoelectric layer 512A can be prevented. Moreover, the film-forming property at the time of forming the wiring 62A and the insulating layer 61A can be improved.

As shown in FIG. 8B, the detection unit 55A includes a first electrode layer 551A (lower electrode layer) and a second electrode provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 551A. The electrode layer 553A (upper electrode layer) and the piezoelectric layer 552A provided between the first electrode layer 551A and the second electrode layer 553A are provided.
A wiring 64A is drawn out to the second electrode layer 553A of the detection unit 55A.
The wiring 64A has a portion provided along the side surface of the piezoelectric layer 552A.

An insulating layer 63A is provided between the side surfaces of the piezoelectric layer 552A and the first electrode layer 551A and the wiring 64A.
In the present embodiment, the side surface of the piezoelectric layer 552A is inclined so as to relax the step due to the piezoelectric layer 552A. Thereby, disconnection of the wiring 64A and damage to the insulating layer 63A due to a step due to the piezoelectric layer 552A can be prevented. In addition, the film forming property when the wiring 64A and the insulating layer 63A are formed can be improved.
The sensor element according to the second embodiment as described above can be manufactured with a high yield and can exhibit excellent reliability.

<Third Embodiment>
Next, a third embodiment of the present invention will be described.
FIG. 9 is a view for explaining a sensor element (vibration piece) according to the third embodiment of the present invention.
The sensor element according to the present embodiment is the same as the sensor element according to the first embodiment described above except that the configuration relating to the wiring of the drive unit and the detection unit is different.
In the following description, the sensor element of the third embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted. In FIG. 9, the same reference numerals are given to the same configurations as those in the above-described embodiment. 9A is a cross-sectional view corresponding to FIG. 5A, and FIG. 9B is a cross-sectional view corresponding to FIG. 5B.

As shown in FIG. 9, the sensor element of the present embodiment includes a drive unit 51 </ b> B and a detection unit 55 </ b> B provided on the vibrating arm 22.
As shown in FIG. 9A, the drive unit 51B includes a first electrode layer 511B (lower electrode layer) and a second electrode provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 511B. The electrode layer 513B (upper electrode layer) and the piezoelectric layer 512B provided between the first electrode layer 511B and the second electrode layer 513B are provided.
The wiring 62B is drawn out to the second electrode layer 513B of the driving unit 51B.
The wiring 62B has a portion provided along the side surface of the piezoelectric layer 512B.
In addition, an insulator layer 61B is provided between the side surfaces of the piezoelectric layer 512B and the first electrode layer 511B and the wiring 62B.

  In the present embodiment, the insulator layer 61B has a portion provided on the second electrode layer 513B side with respect to the piezoelectric layer 512B, and the second layer is between the portion and the piezoelectric layer 512B. There is no electrode layer 513B. Thereby, at the time of manufacturing the sensor element, the second electrode layer 513B and the wiring 62B can be collectively formed after the insulator layer 61B is formed. Therefore, the manufacturing process of the sensor element can be simplified.

As shown in FIG. 9B, the detection unit 55B includes a first electrode layer 551B (lower electrode layer) and a second electrode provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 551B. The electrode layer 553B (upper electrode layer) and the piezoelectric layer 552B provided between the first electrode layer 551B and the second electrode layer 553B are provided.
A wiring 64B is drawn out to the second electrode layer 553B of the detection unit 55B.
The wiring 64B has a portion provided along the side surface of the piezoelectric layer 552B.
In addition, an insulator layer 63B is provided between the side surfaces of the piezoelectric layer 552B and the first electrode layer 551B and the wiring 64B.

In the present embodiment, the second electrode layer 553B does not exist between the piezoelectric layer 552B and the portion provided on the second electrode layer 553B side with respect to the piezoelectric layer 552B of the insulator layer 63B. Thereby, at the time of manufacturing the sensor element, the second electrode layer 553B and the wiring 64B can be collectively formed after the insulator layer 63B is formed. Therefore, the manufacturing process of the sensor element can be simplified.
The sensor element according to the third embodiment as described above can be manufactured with a high yield and can exhibit excellent reliability.

<Fourth embodiment>
Next, a fourth embodiment of the present invention will be described.
FIG. 10 is a diagram for explaining a sensor element (vibration piece) according to the fourth embodiment of the present invention.
The sensor element according to the present embodiment is the same as the sensor element according to the first embodiment described above except that the configuration relating to the wiring of the drive unit and the detection unit is different.

  In the following description, the sensor element of the fourth embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted. In FIG. 10, the same reference numerals are given to the same configurations as those in the above-described embodiment. 10A is a cross-sectional view corresponding to FIG. 5A, and FIG. 10B is a cross-sectional view corresponding to FIG. 5B.

As shown in FIG. 10, the sensor element of the present embodiment includes a drive unit 51 </ b> C and a detection unit 55 </ b> C provided on the vibrating arm 22.
As shown in FIG. 10A, the drive unit 51C includes a first electrode layer 511C (lower electrode layer) and a second electrode provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 511C. The electrode layer 513C (upper electrode layer) and the piezoelectric layer 512C provided between the first electrode layer 511C and the second electrode layer 513C are provided.
A wiring 62C is drawn out to the second electrode layer 513C of the driving unit 51C.
The wiring 62C has a portion provided along the side surface of the piezoelectric layer 512C.

  The piezoelectric layer 512C is formed so that a portion 5121 between the wiring 62C and the first electrode layer 511C covers the side surface of the first electrode layer 511C. Thereby, the piezoelectric layer 512C can prevent a short circuit between the wiring 62C and the first electrode layer 511C. Therefore, it is not necessary to separately form an insulator layer for preventing such a short circuit, and the manufacturing process can be simplified.

As illustrated in FIG. 10B, the detection unit 55C includes a first electrode layer 551C (lower electrode layer) and a second electrode provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 551C. The electrode layer 553C (upper electrode layer) and the piezoelectric layer 552C provided between the first electrode layer 551C and the second electrode layer 553C are provided.
A wiring 64C is drawn out to the second electrode layer 553C of the detection unit 55C.
The wiring 64C has a portion provided along the side surface of the piezoelectric layer 552C.

The piezoelectric layer 552C is formed so that a portion 5521 between the wiring 64C and the first electrode layer 551C covers the side surface of the first electrode layer 551C. Accordingly, the piezoelectric layer 552C can prevent a short circuit between the wiring 64C and the first electrode layer 551C. Therefore, it is not necessary to separately form an insulator layer for preventing such a short circuit, and the manufacturing process can be simplified.
The sensor element 2 according to the fourth embodiment as described above can be manufactured with a high yield and can exhibit excellent reliability.

<Fifth Embodiment>
Next, a fifth embodiment of the present invention will be described.
FIG. 11 is a view for explaining a sensor element (vibration piece) according to the fifth embodiment of the present invention.
The sensor element according to the present embodiment is the same as the sensor element according to the first embodiment described above except that the configuration relating to the wiring of the drive unit and the detection unit is different.

  In the following description, the sensor element of the fifth embodiment will be described with a focus on differences from the above-described embodiment, and description of similar matters will be omitted. In FIG. 11, the same reference numerals are given to the same configurations as those in the above-described embodiment. 11A is a cross-sectional view corresponding to FIG. 5A, and FIG. 11B is a cross-sectional view corresponding to FIG. 5B.

As shown in FIG. 11, the sensor element of the present embodiment includes a drive unit 51 </ b> D and a detection unit 55 </ b> D provided on the vibrating arm 22.
As shown in FIG. 11A, the drive unit 51D includes a first electrode layer 511D (lower electrode layer) and a second electrode provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 511D. It has an electrode layer 513D (upper electrode layer) and a piezoelectric layer 512D provided between the first electrode layer 511D and the second electrode layer 513D.

A wiring 62D is drawn out to the second electrode layer 513D of the driving unit 51D.
The wiring 62D has a portion provided along the side surface of the piezoelectric layer 512D.
The piezoelectric layer 512D is formed so that a portion 5122 between the wiring 62D and the first electrode layer 511D covers the side surface of the first electrode layer 511D. Thereby, a short circuit between the wiring 62D and the first electrode layer 511D can be prevented by the piezoelectric layer 512D. Therefore, it is not necessary to separately form an insulator layer for preventing such a short circuit, and the manufacturing process can be simplified.
Further, the side surface of the portion 5122 of the piezoelectric layer 512D is inclined so as to alleviate the step due to the piezoelectric layer 512D. Thereby, disconnection of the wiring 62D due to a step due to the piezoelectric layer 512D can be prevented. In addition, the film formability when forming the wiring 62D can be improved.

As illustrated in FIG. 11B, the detection unit 55D includes a first electrode layer 551D (lower electrode layer) and a second electrode provided on the opposite side of the vibrating arm 22 with respect to the first electrode layer 551D. The electrode layer 553D (upper electrode layer) and the piezoelectric layer 552D provided between the first electrode layer 551D and the second electrode layer 553D are provided.
A wiring 64D is drawn out to the second electrode layer 553D of the detection unit 55D.
The wiring 64D has a portion provided along the side surface of the piezoelectric layer 552D.

The piezoelectric layer 552D is formed so that a portion 5522 between the wiring 64D and the first electrode layer 551D covers the side surface of the first electrode layer 551D. Thereby, the piezoelectric layer 552D can prevent a short circuit between the wiring 64D and the first electrode layer 551D. Therefore, it is not necessary to separately form an insulator layer for preventing such a short circuit, and the manufacturing process can be simplified.
Further, the side surface of the portion 5522 of the piezoelectric layer 552D is inclined so as to alleviate the step due to the piezoelectric layer 552D. Thereby, disconnection of the wiring 64D due to a step due to the piezoelectric layer 552D can be prevented. In addition, the film formability when forming the wiring 64D can be improved.

The sensor element according to the fifth embodiment as described above can be manufactured with a high yield and can exhibit excellent reliability.
The sensor device of each embodiment as described above can be used by being incorporated in various electronic devices.
According to such an electronic device, the reliability can be improved.

(Electronics)
Here, an example of an electronic apparatus including the vibration device of the present invention will be described in detail with reference to FIGS.
FIG. 12 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which the electronic apparatus of the present invention is applied.
In this figure, a personal computer 1100 includes a main body portion 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display portion 100. The display unit 1106 is rotated with respect to the main body portion 1104 via a hinge structure portion. It is supported movably.
Such a personal computer 1100 incorporates the aforementioned sensor device 1 that functions as a gyro sensor.

FIG. 13 is a perspective view showing a configuration of a mobile phone (including PHS) to which the electronic apparatus of the invention is applied.
In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204, and a mouthpiece 1206, and the display unit 100 is disposed between the operation buttons 1202 and the earpiece 1204.
Such a cellular phone 1200 incorporates the above-described sensor device 1 that functions as a gyro sensor.

FIG. 14 is a perspective view showing the configuration of a digital still camera to which the electronic apparatus of the present invention is applied. In this figure, connection with an external device is also simply shown.
Here, an ordinary camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an imaging device such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

A display unit is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD. The display unit is a finder that displays an object as an electronic image. Function.
A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.
When the photographer confirms the subject image displayed on the display unit and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308.

In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the input / output terminal 1314 for data communication as necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.
Such a digital still camera 1300 incorporates the above-described sensor device 1 that functions as a gyro sensor.

  In addition to the personal computer (mobile personal computer) shown in FIG. 12, the mobile phone shown in FIG. 13, and the digital still camera shown in FIG. Detection device, pointing device, head mounted display, ink jet type ejection device (for example, ink jet printer), laptop personal computer, television, video camera, video tape recorder, navigation device, pager, electronic notebook (including communication function), Electronic dictionary, calculator, electronic game device, game controller, word processor, workstation, video phone, crime prevention TV monitor, electronic binoculars, POS terminal, medical device (for example, electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measurement device) Ultrasonic diagnostic apparatus, an electronic endoscope), a fish finder, various measurement devices, gauges (e.g., vehicle, aircraft, ship instruments), can be applied to a flight simulator or the like.

As mentioned above, although the resonator element, the vibration device, and the electronic apparatus of the present invention have been described based on the illustrated embodiments, the present invention is not limited to these.
Moreover, in the resonator element, the vibration device, and the electronic apparatus of the present invention, the configuration of each part can be replaced with any configuration that exhibits the same function, and any configuration can be added.
In addition, the resonator element, the vibration device, and the electronic apparatus of the present invention may be combined with any configuration of each of the embodiments described above.

In the above-described embodiment, the case where the present invention is applied to a sensor element of a biped tuning fork has been described as an example. However, the present invention is not limited to a pair of couplings extending from the main body portion and the main body portion to opposite sides. Can be applied to a double T-type gyro sensor element having a base including a base, a detection vibrating arm extending from the main body, and a driving vibrating arm extending from each connecting portion. It is. Further, the present invention can be applied to various sensor elements (gyro elements) such as H-type tuning fork, tripod tuning fork, comb-tooth type, orthogonal type, and prismatic type.
Further, the number of vibrating arms may be one or three or more as long as the piezoelectric element (driving unit or detecting unit) as described above is provided in at least one vibrating arm.

DESCRIPTION OF SYMBOLS 1 ... Sensor device 2 ... Sensor element 3 ... IC chip 4 ... Package 20 ... Vibration body 21 ... Base 22 ... Vibration arm 23 ... Vibration arm 24 ... Insulator layer 26 ... Support part 27 Vibration arm for detection 28 Vibration arm for detection 31 Connection terminal 41 Base member 42 Lid member 51 Drive unit (piezoelectric element) 51A Drive unit (piezoelectric element) 51B Drive unit (piezoelectric element) 51C Drive unit (piezoelectric element) 51D Drive unit (piezoelectric element) 52 Drive unit (piezoelectric element) 52C Drive unit (piezoelectric element) 52D Drive unit (piezoelectric element) 53 Drive unit (piezoelectric element) 53C Drive unit (piezoelectric element) 54 Drive unit (piezoelectric element) 55 Detection unit (piezoelectric element) 55A ... Detection part (piezoelectric element) 55 ... Detection part (piezoelectric element) 55C ... Detection part (piezoelectric element) 55D ... Detection part (piezoelectric element) 56 ... Detection part (piezoelectric element) 56C ... Detection part (piezoelectric element) 57a ... terminal 57b ... terminal 57c ... terminal 57d ... terminal 57e ... terminal 57f ... terminal 59a ... terminal 59b ... terminal 59c ... terminal 59d ... terminal 59e ... terminal 59f ... terminal 61 ... ... Insulator layer 61A ... Insulator layer 61B ... Insulator layer 62 ... Wiring 62A ... Wiring 62B ... Wiring 62C ... Wiring 62D ... Wiring 63 ... Insulating layer 63A ... Insulating layer 63B ... Insulator layer 64 Wiring 64A Wiring 64B Wiring 64C Wiring 64D Wiring 71 Internal terminal 72 Internal terminal 73 External terminal 81 Joining member 2 ... Joining member 100 ... Display part 201 ... Substrate 202 ... Conductor layer 203 ... Piezoelectric layer 204 ... Conductor layer 261 ... Fixing part 262 ... Beam part 411 ... Plate body 412 ... Frame body 511 ... First electrode layer (lower electrode layer) 511A ... First electrode layer (lower electrode layer) 511B ... First electrode layer (lower electrode layer) 511C ... First electrode layer (lower electrode layer) Layer) 511D ... 1st electrode layer (lower electrode layer) 512 ... Piezoelectric layer 512A ... Piezoelectric layer 512B ... Piezoelectric layer 512C ... Piezoelectric layer 512D ... Piezoelectric layer 513 ... 2nd Electrode layer (upper electrode layer) 513A ... Second electrode layer (upper electrode layer) 513B ... Second electrode layer (upper electrode layer) 513C ... Second electrode layer (upper electrode layer) 513D ... Second electrode layer (upper electrode layer) 521 1st electrode layer (lower electrode layer) 521C 1st electrode layer (lower electrode layer) 521D 1st electrode layer (lower electrode layer) 522 ... Piezoelectric layer 522C ... Piezoelectric layer 522D ... Piezoelectric layer 523 ... Second electrode layer (upper electrode layer) 523C ... Second electrode layer (upper electrode layer) 523D ... Second electrode layer (upper electrode layer) 531 ... First Electrode layer (lower electrode layer) 532 ... Piezoelectric layer 533 ... Second electrode layer (upper electrode layer) 541 ... First electrode layer (lower electrode layer) 542 ... Piezoelectric layer 543 ... First Second electrode layer (upper electrode layer) 551 ... 1st electrode layer (lower electrode layer) 551A ... 1st electrode layer (lower electrode layer) 551B ... 1st electrode layer (lower electrode layer) 551C ... ... 1st electrode layer (lower electrode layer) 551D ... 1st electrode layer (lower electrode) ) 552 ... Piezoelectric layer 552A ... Piezoelectric layer 552B ... Piezoelectric layer 552C ... Piezoelectric layer 552D ... Piezoelectric layer 553 ... Second electrode layer (upper electrode layer) 553A ... Second Electrode layer (upper electrode layer) 553B ... Second electrode layer (upper electrode layer) 553C ... Second electrode layer (upper electrode layer) 553D ... Second electrode layer (upper electrode layer) 561 ... First 1 electrode layer (lower electrode layer) 562 ... piezoelectric layer 563 ... second electrode layer (upper electrode layer) 611 ... part 621 ... part 631 ... part 641 ... part 5121 ... part 5122 ... Part 5521 ... Part 5522 ... Part 1100 ... Personal computer 1102 ... Keyboard 1104 ... Body part 1106 ... Display unit 1200 ... Mobile phone 1202 ... Operation button 1204 ... Earpiece 1206 ... Mouthpiece 1300 ... Digital still camera 1302 ... Case 1304 ... Light receiving unit 1306 ... Shutter button 1308 ... Memory 1312 ... Video signal output terminal 1314 ... Input / output terminal 1430 TV monitor 1440 Personal computer ω Angular velocity

[package]
As shown in FIGS. 1 and 2, the package 4 includes a base member 41 (base) having a concave portion that opens upward, and a lid member 42 (lid) provided so as to cover the concave portion of the base member 41. Prepare. Thereby, an internal space in which the sensor element 2 and the IC chip 3 are accommodated is formed between the base member 41 and the lid member 42.
The base member 41 includes a flat plate body 411 (plate portion) and a frame body 412 (frame portion) joined to the outer peripheral portion of the upper surface of the plate body 411.
Such base member 41 is, for example, oxide Aluminum bromide sintered body, the crystal, and a glass or the like.

Claims (11)

The base,
A vibrating arm extending from the base;
Provided on the vibrating arm, provided on a lower electrode layer, an upper electrode layer provided on a side opposite to the vibrating arm with respect to the lower electrode layer, and provided between the lower electrode layer and the upper electrode layer A piezoelectric element having a piezoelectric layer,
A wiring having a portion drawn from the upper electrode layer and provided along the side surface of the piezoelectric layer;
A resonator element comprising: a terminal provided on the base and electrically connected to the upper electrode layer through the wiring.   2. The resonator element according to claim 1, further comprising an insulator layer that is provided between a side surface of the piezoelectric layer and the lower electrode layer and the wiring and is made of a material different from the piezoelectric layer. The insulator layer has a portion provided on the upper electrode layer side with respect to the piezoelectric layer,
The resonator element according to claim 2, wherein a part of the upper electrode layer is interposed between the portion and the piezoelectric layer. The insulator layer has a portion provided on the upper electrode layer side with respect to the piezoelectric layer,
The resonator element according to claim 2, wherein the upper electrode layer does not exist between the portion and the piezoelectric layer.   5. The resonator element according to claim 2, wherein a thickness of the insulator layer is thicker than a thickness of the lower electrode layer.   The resonator element according to claim 1, wherein the piezoelectric layer is provided so that a portion between the wiring and the lower electrode layer covers a side surface of the lower electrode layer.   7. The resonator element according to claim 1, wherein the side surface of the piezoelectric layer is inclined with respect to a main surface of the lower electrode layer.   The resonator element according to claim 1, wherein the upper electrode layer and the wiring are made of the same material.   The resonator element according to claim 1, wherein the upper electrode layer and the wiring are integrated.   A vibration device comprising the resonator element according to claim 1.   An electronic device comprising the resonator element according to claim 1.

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