JP5578078B2 - Method for producing functional layer - Google Patents

Description

The present invention relates to the production how the functional layer.

  Along with the rapid miniaturization of information terminals in recent years, the wiring pitch of the printed wiring board mounted on the information terminal has also been reduced. Specifically, it is formed on the printed wiring board as the circuit in the semiconductor becomes finer. The minimum line width and film thickness of circuit patterns are becoming increasingly narrower.

  Under such circumstances, Japanese Patent Application Laid-Open No. 2002-324966 discloses pattern printing of ultrafine metal particles having an average particle diameter of several nanometers to several hundred nanometers on a substrate by an inkjet method, and the circuit pattern is heated to a temperature of 200 ° C. or higher. Discloses a method of obtaining a conductive circuit pattern by baking.

  Japanese Patent Laid-Open No. 2006-32326 discloses a solution in which ultrafine metal particles having an average particle diameter of 1 nm to 40 nm are dispersed in a solvent, and a uniform coating film is formed on a substrate by spin coating or spray coating at 400 ° C. to 900 ° C. A method for obtaining a thin film electrode and a thin film element (for example, a dielectric element) by firing is disclosed.

  However, although these methods are firing at a relatively low temperature, if a plastic substrate having a low glass transition temperature and a low melting temperature is to be used, firing at a lower temperature is required. Element characteristics could not be obtained.

  Japanese Patent Application Laid-Open No. 2004-55363 discloses a colloidal dispersion containing specific metal compound nanoparticles having an average particle diameter of 1 nm to 20 nm as a method for obtaining a thin film conductive layer on such a substrate having low heat resistance. A method of drawing by an ink jet method and firing using any laser selected from infrared light and ultraviolet light is disclosed.

  This method is an effective method for a substrate having low heat resistance. However, since a laser having a beam diameter of 10 μm to several tens of μm is scanned, it takes a long time to fire an actually patterned electrode. In other words, there is a description about a transparent conductive film made of a metal oxide, but the detailed description about firing in a fine metal pattern is that the surface resistance is reduced to only about several hundred Ω / □. Has not been.

  Japanese Patent Application Laid-Open No. 2005-294053 also discloses a baking method using microwaves, and this method has a thermal decomposability and particles that absorb high-frequency electromagnetic waves on the surface of various substrates. After application, high-frequency electromagnetic wave irradiation is performed, whereby the thermally decomposable particles are selectively heated, decomposed, and fused to obtain a low-resistance metal pattern.

  And since the particle | grains which absorb a high frequency electromagnetic wave itself decompose | disassemble and become a metal, there exists an advantage which electromagnetic wave absorption capability lose | disappears and a heating is complete | finished spontaneously.

  However, in order to efficiently produce a conductive pattern by this method, it is necessary to select a material having both high electromagnetic wave absorption capability (dielectric loss) and low decomposition temperature. The efficiency is low unless silver oxide, silver nitride, and silver halide having low temperature decomposition (reduction reaction) properties are used, and it is difficult to obtain a practical conductivity unless silver oxide having high dielectric loss is used.

  On the other hand, it has been pointed out that a discharge phenomenon occurs at the time of microwave irradiation, resulting in thermal runaway at a portion where microwave irradiation is performed, and a crack is generated at the irradiated portion.

  On the other hand, for example, a conductive foam sheet is laid under the coating to prevent discharge during electromagnetic wave irradiation (see, for example, Patent Document 1), and the surface of the transparent conductive film is oxidized. A titanium oxide particle aggregate thin film is applied by applying a titanium fine particle paste, placed on the conductor in such a position that the titanium oxide particle aggregate thin film side is down, and is irradiated with microwaves to discharge. There is a technique for preventing (see, for example, Patent Document 2).

  However, for the purpose of grounding the discharge from the conductive thin film precursors described in Patent Documents 1 and 2, it is necessary to bring the conductor into direct contact with the conductive thin film precursor. There was a problem that it was discharged.

  Furthermore, a technique is disclosed in which discharge is prevented by adjusting the output according to the loss coefficient of an object to be irradiated with microwaves (see, for example, Patent Document 3).

  However, when the temperature is raised to a high temperature, the output of the microwave may not be increased, and there is a problem that the formation of the conductive layer that requires a high temperature cannot be raised to a predetermined temperature only by adjusting the output.

JP 2001-91126 A JP 2006-60064 A JP 2001-54730 A

An object of the present invention is based on the abnormal discharge due to microwave radiation, a Hisage Kyosu Rukoto a method of manufacturing a functional layer capable of preventing deterioration due to carbonization of the crack and the material in the irradiated region.

  The above object of the present invention has been achieved by the following constitution.

1. In the method for producing a functional layer having a step of irradiating the conductive particle-containing layer with electromagnetic waves, on the conductor, the conductive particle-containing layer is disposed away from the conductor at a distance of 1 mm or less . A method for producing a functional layer, comprising a step of irradiating the electromagnetic wave.
2. 2. The method for producing a functional layer according to 1, wherein the conductive particle-containing layer is formed on a substrate and disposed on the conductor via the substrate.
3. 3. The method for producing a functional layer according to 1 or 2, wherein the electromagnetic wave is irradiated in an oxygen-excess atmosphere.

4 . At least 1 layer of the said functional layer is a conductive layer, The manufacturing method of the functional layer of any one of said 1-3 characterized by the above-mentioned.

5 . 5. The method for producing a functional layer according to any one of 1 to 4, wherein at least one of the functional layers is a semiconductor active layer.

6 . 6. The method for producing a functional layer according to any one of 1 to 5 , wherein a surface area of the conductive particle-containing layer is equal to or less than a surface area of the conductor.

7 . 7. The method for producing a functional layer according to any one of 1 to 6 , wherein the conductive particle-containing layer includes at least an oxide of In, Zn, or Sn.

8 . 8. The method for producing a functional layer according to any one of 1 to 7 , wherein the electromagnetic wave is a microwave.

The present invention, based on the abnormal electrical discharge by the microwave irradiation method of manufacturing a functional layer capable of preventing the deterioration can Hisage Kyosu Rukoto the by carbonization of crack and the material in the irradiated region.

It is sectional drawing which shows the structural example of the thin-film transistor element of this invention. It is a schematic equivalent circuit diagram of an example of the thin film transistor sheet in which a plurality of thin film transistor elements of the present invention are arranged. It is a schematic sectional drawing which shows the positional relationship of a conductive particle content layer and a conductor at the time of microwave irradiation. It is a schematic diagram of the thin-film transistor element manufacturing process of this invention. It is a schematic diagram of the thin-film transistor element manufacturing process of this invention.

  In the method for producing a functional layer according to the present invention, the structure according to any one of claims 1 to 7 is caused by generation of cracks in the irradiated region, carbonization of a constituent material, or the like based on abnormal discharge caused by microwave irradiation. The manufacturing method of the functional layer which prevented deterioration can be provided.

  Moreover, the functional layer and electronic device which were manufactured by this manufacturing method were able to be provided.

  Hereinafter, although the form for implementing this invention is demonstrated, this invention is not limited by these.

  In the field of ceramics, it is already known to use the electromagnetic wave according to the present invention for sintering. The material containing magnetism is irradiated with electromagnetic waves, and heat is generated according to the size of the loss portion of the complex permeability of the substance, so that the temperature can be increased uniformly and in a short time.

  On the other hand, it is also well known that when an electromagnetic wave is irradiated onto a metal, free electrons start to move at a high frequency, so that arc discharge occurs and heating cannot be performed.

  Based on such a technical background, the present inventors have intensively studied the above-mentioned problems. As a result, for example, after arranging a conductive particle-containing layer directly or indirectly on a conductor, electromagnetic waves are not generated. By providing the irradiation step, it was possible to provide a method for producing a functional layer that prevented the deterioration due to the occurrence of cracks in the irradiated region and the carbonization of the constituent materials based on abnormal discharge caused by microwave irradiation.

  Moreover, the functional layer and electronic device which used this manufacturing method were able to be obtained.

<< Method for producing functional layer >>
The manufacturing method of the functional layer of this invention is demonstrated.

  The present invention relates to a method for producing a functional layer having a step of irradiating an electromagnetic wave onto a conductive particle-containing layer (also referred to as a metal oxide conductive film). The conductive particle-containing layer is directly or indirectly provided on a conductor. The functional layer containing the conductive particle-containing layer is then irradiated with electromagnetic waves, thereby preventing the deterioration due to the occurrence of cracks in the irradiated region and carbonization of the constituent materials based on abnormal discharge due to microwave irradiation. Could provide a way.

  Moreover, as a functional layer which concerns on this invention obtained by irradiating electromagnetic waves to an electroconductive particle content layer, a semiconductor active layer or an electroconductive layer is preferable so that it may mention later.

  Hereinafter, it will be described in order.

(Conductive particle-containing layer (also referred to as metal oxide conductive film))
The conductive particle-containing layer according to the present invention will be described.

  When the conductive particle-containing layer is used to form a conductive layer, the conductive particles contained in the conductive particle-containing layer according to the present invention are preferably metal oxide particles, such as indium oxide, tin oxide, and oxide. Zinc, IZO, ITO and the like are preferable, and it is preferable to include at least an oxide of In, Zn or Sn.

  As an example of the conductive particle-containing layer, in the ITO layer obtained by doping indium oxide with tin, the In: Sn atomic ratio of the obtained ITO layer is preferably 100: 0.5 to 100: 10. A range is preferred.

  The atomic ratio of In: Sn can be determined by XPS (X-ray photoelectron spectroscopy) measurement.

In addition, a transparent conductive film (referred to as FTO film) obtained by doping tin oxide with fluorine (Sn: F atomic ratio in the range of 100: 0.01 to 100: 50), In ₂ O ₃ —ZnO-based amorphous A conductive film (In: Zn atomic ratio in the range of 100: 50 to 100: 5) or the like can be used. The atomic ratio can be determined by XPS measurement.

  Formation of the conductive particle-containing layer made of metal oxide particles can be achieved by using vacuum deposition or sputtering, or by plasma CVD using metal alkoxides such as indium and tin, and organometallic compounds such as alkyl metals. It is also preferable to form.

Moreover, it can manufacture also by application | coating methods, such as a sol gel method using metal alkoxides, such as indium and tin, and can obtain the ITO layer which has the outstanding electroconductivity of a 10 ^<-4> ohm * cm order by a specific resistance value. Moreover, an electrode pattern can be obtained by combining with an appropriate patterning method.

  As a dispersion of metal oxide fine particles containing at least an oxide of In and Sn, ITO fine particles are particularly preferable because they are very fine and highly dispersed. Sn oxide has a high ability to absorb electromagnetic waves, and the electrode pattern portion containing Sn oxide is initially heated to a high temperature. Therefore, when an electrode material precursor is included, the vicinity of the electrode pattern portion also becomes high, so that it is preferably used. Can do.

  These metal oxide fine particles are obtained from, for example, a gel-like material obtained by heating a solution adjusted in pH by a method such as heating or low-temperature sintering. The coating material (ink) dispersed in an appropriate solvent is a fine particle having a high degree of dispersion that does not cause clogging due to aggregation even when used in coating, ink jetting, printing, or the like.

  The particle size of such particles is preferably in the range of 5 nm to 50 nm.

These are commercially available and can also be obtained directly from the market. Examples thereof include Cai Kasei Co., Ltd. NanoTek Slurry ITO, ULVAC ITO dispersion, SnO _{2 and the} like.

  When these particle dispersions are used as a precursor for forming a conductive layer, which will be described later, an electrode material such as ITO can be easily patterned by a coating method such as an ink jet method, etc., regardless of a sputtering method, etc. Due to the relatively low temperature heat treatment or sintering at a surface temperature of 200 ° C. to 600 ° C., crystallization of fine particles occurs and a highly conductive thin film is obtained.

  Examples of the electrode material precursor include at least In, Sn, and Zn atom-containing compounds, and examples thereof include metal salts, metal halide compounds, and organometallic compounds containing these metal atoms.

  As metal salts containing at least In, Sn, and Zn, nitrates, acetates, and the like can be suitably used, and as halogen metal compounds, chlorides, iodides, bromides, and the like can be suitably used.

  Among the electrode material precursors described above, preferred are indium, tin, zinc nitrates, halides, and alkoxides. Specific examples include indium nitrate, tin nitrate, zinc nitrate, indium chloride, tin chloride (divalent), tin chloride (tetravalent), zinc chloride, tri-i-propoxyindium, diethoxyzinc, bis (dipivaloylme). Tanato) zinc, tetraethoxytin, tetra-i-propoxytin and the like.

  In addition, the conductive particle-containing layer used for forming the conductive layer preferably contains the following metal fine particles.

(Metal fine particles)
When the conductive particle-containing layer according to the present invention is converted into a functional layer by irradiation with electromagnetic waves, and the functional layer forms a conductive layer, a metal having an average particle diameter of 1 nm to 100 nm is formed in the conductive particle-containing layer. Fine particles can be suitably used.

  Metal fine particles include platinum, gold, silver, nickel, chromium, copper, iron, tin, antimony lead, tantalum, indium, palladium, tellurium, rhenium, iridium, aluminum, ruthenium, germanium, molybdenum, tungsten, tin oxide / antimony , Indium tin oxide (ITO), fluorine-doped zinc oxide, zinc, carbon, graphite, glassy carbon, silver paste and carbon paste, lithium, beryllium, sodium, magnesium, potassium, calcium, scandium, titanium, manganese, zirconium, gallium , Niobium, sodium, sodium-potassium alloy, magnesium, lithium, aluminum, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium Indium mixture, aluminum / aluminum oxide mixture, a lithium / aluminum mixture, or the like is used.

  The average particle size of the metal fine particles according to the present invention is such that when a conductive layer is applied and formed using a dispersion, the dispersibility of the metal fine particles is kept good, aggregate formation is prevented, and a dispersion with a uniform composition is made. From the viewpoint of preparing, and from the viewpoint of facilitating sintering at a low temperature, it is preferable to use one having an average particle diameter adjusted to a range of 1 nm to 100 nm, more preferably a range of 1 nm to 40 nm. Preferably, it is the range of 2 nm-10 nm.

  In addition, it is possible to use a Pd alloy, a Pt alloy, an Au alloy, an Ag alloy, a Ni alloy, or simple particles of these metals, which can be stably obtained as metal fine particles having an average particle diameter of 1 nm to 100 nm. preferable.

(Conductive particle-containing layer used for forming semiconductor active layer)
When the conductive particle-containing layer according to the present invention is used for forming a semiconductor active layer, the conductive particle-containing layer according to the present invention preferably uses a metal oxide semiconductor precursor as a semiconductor precursor, An organic semiconductor precursor material may be used in combination.

  Examples of the metal oxide semiconductor precursor include a metal atom-containing compound, and examples of the metal atom-containing compound include metal salts, metal halide compounds, and organic metal compounds containing a metal atom.

  Metals of metal salts, halogen metal compounds, and organometallic compounds include Li, Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Cd, In, Ir, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Tl, Pb, Bi, Ce, Pr Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and the like.

  Among these metal salts, it is preferable to contain any metal ion of indium, tin, and zinc, and they may be used in combination.

  Moreover, it is preferable that a gallium or aluminum is included as another metal.

  As metal salts, nitrates, acetates and the like can be suitably used, and as halogen metal compounds, chlorides, iodides, bromides and the like can be suitably used.

  Examples of the organometallic compound include those represented by the following general formula (I).

Formula (I) R ¹ _x MR ² _y R ³ _z
In the formula, M is a metal, R ¹ is an alkyl group, R ² is an alkoxy group, R ³ is a β-diketone complex group, a β-ketocarboxylic acid ester complex group, a β-ketocarboxylic acid complex group, and a ketooxy group (ketooxy complex group). X + y + z = m, x = 0 to m, or x = 0 to m−1, and y = 0 to m, z = 0. ~ M, each of which is 0 or a positive integer.

Examples of the alkyl group for R ¹ include a methyl group, an ethyl group, a propyl group, and a butyl group.

Examples of the alkoxy group for R ² include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, and a 3,3,3-trifluoropropoxy group. Further, a hydrogen atom in the alkyl group may be substituted with a fluorine atom.

Examples of the group represented by R ^{3 selected} from a β-diketone complex group, a β-ketocarboxylic acid ester complex group, a β-ketocarboxylic acid complex group, and a ketooxy group (ketooxy complex group) include a β-diketone complex group, for example, 2,4-pentanedione (also referred to as acetylacetone or acetoacetone), 1,1,1,5,5,5-hexamethyl-2,4-pentanedione, 2,2,6,6-tetramethyl-3, 5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, and the like. Examples of β-ketocarboxylic acid ester complex groups include methyl acetoacetate, ethyl acetoacetate, propyl acetoacetate. Esters, ethyl trimethylacetoacetate, methyl trifluoroacetoacetate and the like, and β-ketocarboxylic acid and Examples thereof include acetoacetic acid and trimethylacetoacetic acid, and examples of ketooxy include acetooxy group (or acetoxy group), propionyloxy group, butyryloxy group, acryloyloxy group, and methacryloyloxy group. be able to.

  These groups preferably have 18 or less carbon atoms. Further, it may be linear or branched, or a hydrogen atom may be a fluorine atom.

Among organometallic compounds, those having at least one oxygen in the molecule are preferable. As such, an organometallic compound containing at least one alkoxy group of R ² , a β-diketone complex group, a β-ketocarboxylic acid ester complex group, a β-ketocarboxylic acid complex group and a ketooxy group of R ³ ( Most preferred is a metal compound having at least one group selected from a ketooxy complex group.

  Among metal salts, nitrate is preferable. Nitrate is easily available as a high-purity product and has high solubility in water, which is preferable as a medium for use. Examples of nitrates include indium nitrate, tin nitrate, zinc nitrate, and gallium nitrate.

  Of the above metal oxide semiconductor precursors, metal nitrates, metal halides, and alkoxides are preferable. Specific examples include indium nitrate, zinc nitrate, gallium nitrate, tin nitrate, aluminum nitrate, indium chloride, zinc chloride, tin chloride (divalent), tin chloride (tetravalent), gallium chloride, aluminum chloride, tri-i-. Examples include propoxyindium, diethoxyzinc, bis (dipivaloylmethanato) zinc, tetraethoxytin, tetra-i-propoxytin, tri-i-propoxygallium, and tri-i-propoxyaluminum.

(Method for forming conductive particle-containing layer)
The formation method of the electroconductive particle content layer concerning the present invention is explained.

  In the present invention, in order to form the conductive particle-containing layer, a known film formation method (for example, vacuum deposition method, molecular beam epitaxial growth method, ion cluster beam method, low energy ion beam method, ion plating method, CVD) Method, sputtering method, atmospheric pressure plasma method, etc.), and a film formation method by coating (also referred to as a wet process) can be used, but a method of continuously forming a film by coating on a substrate (also referred to as a wet process) is preferable. .

  As a method for forming a conductive particle-containing layer by coating (wet process), spray coating method, spin coating method, blade coating method, dip coating method, casting method, roll coating method, bar coating method, die coating method, mist And the like, and printing methods such as letterpress, intaglio, lithographic printing, screen printing, and ink jet printing, and the like, and the method of patterning by this. The coating film may be patterned by photolithography, laser ablation, or the like.

  Among the methods for forming the conductive particle-containing layer by coating, the inkjet method and spray coating method that can apply a thin film are more preferable, and the inkjet method is particularly preferable from the viewpoint of fine circuit patterning and on-demand properties. Most preferred.

  For example, when forming a conductive particle-containing layer using an inkjet method, a thin film pattern can be formed by dropping a dispersion containing conductive particles and volatilizing the solvent at about 150 ° C.

  In addition, when dropping the dispersion, it is preferable to heat the substrate itself to about 150 ° C. because two processes of coating and drying can be performed simultaneously.

  Moreover, it is preferable to adjust to the range of 1 nm-200 nm as a film thickness of an electroconductive particle content layer, More preferably, it is adjusting to the range of 5 nm-100 nm.

  Solvents used when the conductive particle-containing layer is formed by coating (wet process) include water, alcohols such as ethanol, propanol, and ethylene glycol, ethers such as tetrahydrofuran and dioxane, methyl acetate, and ethyl acetate. Esters, ketones such as acetone, methyl ethyl ketone, cyclohexanone, glycol ethers such as diethylene glycol monomethyl ether, acetonitrile, and aromatic hydrocarbon solvents such as xylene and toluene, o-dichlorobenzene, nitrobenzene, m- Aromatic solvents such as cresol, aliphatic hydrocarbon solvents such as hexane, cyclohexane and tridecane, α-terpineol, alkyl halide solvents such as chloroform and 1,2-dichloroethane, N-methylpyrrole Don, carbon disulfide and the like are preferably used.

  In addition, a solvent having a relatively high polarity is preferable, and in particular, when water having a boiling point of 100 ° C. or less, alcohols such as ethanol and propanol, acetonitrile, or a mixture thereof can be used, the drying temperature can be lowered. It becomes possible to apply, and is more preferable. In particular, the solvent preferably contains 50% by mass or more of water or alcohols.

  Further, when a metal alkoxide and a chelate ligand which is a multidentate ligand such as various alkanolamines, α-hydroxy ketones, β-diketones, etc. are added to the solvent, the metal alkoxide is stabilized or carboxylate It is preferable to add in the range which can increase the solubility of and does not cause adverse effects.

(Preparation of dispersion for forming conductive layer particle-containing layer)
When the conductive layer particle-containing layer according to the present invention is formed by coating (wet process), a colloidal dispersion can be obtained by dispersing the above conductive particles in an appropriate dispersion medium.

  Examples of the dispersion medium include water, alcohols and glycols, and the dispersion preferably contains an organic compound such as an adsorbing compound (dispersing agent) or a surfactant.

  The adsorptive compound and the surfactant can be adsorbed on the surface of the colloidal particles and modified to improve the stability of the dispersion.

Examples of the adsorptive compound include —SH, —CN, —NH ₂ , —SO ₂ OH, —SOOH, —OPO (OH) ₂ , and a compound containing —COOH, and among them, —SH or —COOH containing Compounds are preferred. In the case of a hydrophilic colloid, it is preferable to use an adsorptive compound having a hydrophilic group {for example, —SO ₃ M or —COOM (M is a hydrogen atom, an alkali metal atom, an ammonium molecule, or the like)}.

  In addition, anionic surfactants (for example, bis (2-ethylhexyl) sulfosuccinic acid and sodium dodecylbenzenesulfonate), nonionic surfactants (for example, polyalkyl glycol alkyl esters and alkylphenyl ethers), fluorine-based surfactants It is also preferable to include a surfactant and a hydrophilic polymer (for example, hydroxyethyl cellulose, polyvinyl pyrrolidone, polyvinyl alcohol, polyethylene glycol, gelatin, etc.) in the dispersion.

  The conductive layer particle-containing layer forming dispersion is intended for various additives such as antistatic agents, UV absorbers, plasticizers, polymer binders, carbon nanoparticles, and pigments in addition to the organic compounds such as the adsorptive compounds. It may be added depending on. After adjusting the physical properties, it is preferably used as an ink-jet ink.

  The particle concentration in the conductive particle-containing layer forming dispersion is preferably 0.5% by mass or more, and more preferably 1% by mass to 30% by mass.

(Step of converting conductive particle-containing layer to functional layer)
Firing is performed by irradiating the conductive particle-containing layer with electromagnetic waves, and a functional layer can be obtained. As the electromagnetic wave, it is preferable to perform microwave irradiation described later.

  As the functional layer according to the present invention, a conductive layer obtained by converting the conductive particle-containing layer (specifically, a baking treatment) or a semiconductor active layer is preferable.

  Specific examples of the conductive layer according to the present invention include an electrode and a gate electrode, a source electrode, a drain electrode, and the like constituting a thin film transistor element, which are preferable examples of the electronic device of the present invention.

  Moreover, the semiconductor active layer which concerns on this invention can be used as a semiconductor active layer which comprises a thin-film transistor element which is a preferable example of the electronic device of this invention.

  The conversion process from the conductive particle-containing layer to the functional layer according to the present invention will be described with reference to FIGS. 3 (a), (b) and (c).

  FIG. 3A is a schematic diagram showing that a conductive particle-containing layer (also referred to as a metal oxide conductive film) 22 is disposed on the conductor 21. In the method for producing a functional layer of the present invention, after the conductive particle-containing layer 22 is disposed directly or indirectly on the conductor 21, as shown in FIGS. 3 (b) and 3 (c). The electromagnetic wave 23 is irradiated on the surface.

  In the present invention, the surface area of the conductive particle-containing layer (metal oxide conductive film) 22 is preferably less than or equal to the surface area of the conductor 21.

  FIG. 3B is a schematic view showing an example in which a conductive particle-containing layer (metal oxide conductive film) 22 is directly disposed on the conductor 21.

  In FIG.3 (b), the electromagnetic wave 23 is irradiated to the electroconductive particle content layer (metal oxide electrically conductive film) 22 via the base material 20, and the functional layer (for example, conductive layer or semiconductor active layer) which concerns on this invention is shown. Etc.).

  FIG. 3C is a schematic view showing an example in which a conductive particle-containing layer (metal oxide conductive film) 22 is disposed on the conductor 21 via the base material 20.

  In FIG.3 (c), the electromagnetic waves 23 are directly irradiated to the electroconductive particle content layer 22 (metal oxide electrically conductive film), and are converted into the functional layer (for example, a conductive layer, a semiconductor active layer, etc.) based on this invention. Is done.

  In the present invention, the configuration of the conductive particle-containing layer (metal oxide conductive film) 22 and the conductor 21 is irradiated with the electromagnetic wave 23 as shown in FIG. 3 (a) or FIG. 3 (b). Conventionally, it has been possible to effectively prevent the occurrence of cracks in the film due to discharge during electromagnetic wave irradiation.

  Further, from the viewpoint of preventing discharge during irradiation with the electromagnetic wave 23, in the present invention, the distance between the conductor 21 and the conductive particle-containing layer (metal oxide conductive film) 22 is preferably set to 1 mm or less. .

(conductor)
The conductor according to the method for producing a functional layer of the present invention will be described.

  The conductor according to the present invention is preferably a metal oxide material, and particularly preferably a material having high conductivity and absorbing electromagnetic waves.

  In addition, as shown in FIGS. 3A to 3C, for example, the conductor according to the present invention includes a conductive particle-containing layer (in FIG. 3B and FIG. 3C, a metal oxide). (Described as a conductive film).

The preferred specific resistance of the conductor according to the present invention is preferably in the range of 1 × 10 ⁻⁴ Ωcm to 1 × 10 ² Ωcm, more preferably in the range of 1 × 10 ⁻² Ωcm to 1 Ωcm. Is to adjust.

  Although the reason is not clear, the conductor of the present invention prevents the microwave from being concentrated more than necessary on the functional layer itself to be formed by the microwave, and further absorbs the excess microwave energy absorbed by itself. It is thought that discharge from the functional layer is prevented by heat conversion and / or grounding.

  From such a point of view, a metal having free electrons that are highly conductive but loosely bound is likely to discharge itself or reflects electromagnetic waves due to the movement of free electrons. It is not included in the conductor.

  In addition, from the same viewpoint, so-called conductive metal oxides such as doped Si, In oxide, Zn oxide, Sn oxide and the like that exhibit relatively high conductivity from room temperature to high temperature due to degenerate conduction are preferable.

  Furthermore, if there is a part with high resistance such as a grain boundary in the inside of these conductive metal oxides, there is a risk of causing discharge in that part, so that those made of a single crystal are preferable.

  Moreover, the conductive particle-containing layer according to the present invention (for example, a precursor layer of a conductive layer, a precursor layer of a semiconductor active layer, or the like) is directly or directly on a conductor having such an electromagnetic wave absorbing ability. By indirectly irradiating it with electromagnetic waves, the conductive particle-containing layer is not only converted to a conductive layer, but also its vicinity can be adjusted to a high temperature, for example, including a precursor of a metal oxide semiconductor. It is also possible to proceed with conversion of the conductive particle-containing layer into a semiconductor active layer.

(Electromagnetic radiation)
The electromagnetic wave according to the present invention will be described.

  In the step of converting the conductive particle-containing layer by irradiation of electromagnetic waves according to the present invention into a functional layer, microwave irradiation is preferable, and more preferably, microwave irradiation is performed in the presence of oxygen.

  Examples of the microwave include a microwave having a frequency of 0.3 GHz to 30 GHz, and 0.8 GHz and 1.5 GHz band, 2 GHz band used for mobile communication, 1.2 GHz used for amateur radio, aircraft radar, and the like. The 2.4 GHz band used in bands, microwave ovens, private radio, VICS, 3 GHz band used for ship radar, etc., and 5.6 GHz used for other ETC communications are preferably electromagnetic waves that fall within the category of electromagnetic waves. Particularly preferably, a microwave having a frequency of 0.3 GHz to 50 GHz is used.

  By irradiating the conductive particle-containing layer containing the metal salt material with microwaves, electrons in the metal salt material vibrate, Joule heat is generated, and the conductive particle-containing layer is uniformly heated from the inside.

  In the method for producing a functional layer according to the present invention, for example, the conductive particle-containing layer according to the present invention may be formed on a substrate such as glass or resin. Therefore, the substrate itself hardly heats up, and only the thin film portion is selectively heated to thermally oxidize, a semiconductor active layer (a layer containing a metal oxide semiconductor) or a conductive layer (a layer containing a conductive material). It is possible to convert

  Generally, in microwave heating, microwave absorption concentrates on strongly absorbing substances and can be heated up to 500 ° C. to 600 ° C. in a very short time. When applied, the base material itself is hardly affected by heating by electromagnetic waves, and only the conductive particle-containing layer can be heated up to a temperature at which the oxidation reaction occurs in a short time. It can convert into the functional layer which concerns on.

  Further, the heating temperature and the heating time can be controlled by the output of the microwave to be irradiated and the irradiation time, and can be adjusted according to the precursor material and the substrate material.

  As described above, the conductive particles according to the present invention can be selectively heated uniformly to a high temperature in a short time similarly to ceramics.

  A method for performing conversion to a functional layer (for example, a semiconductor active layer or a conductive layer) by irradiating a conductive particle-containing layer containing conductive particles with microwaves in the presence of oxygen in a short time. This is a preferable method from the viewpoint of allowing the heating oxidation reaction to proceed selectively.

  However, since heat is transferred to the base material due to heat conduction, especially in the case of a base material with low heat resistance such as a resin substrate, the output of the microwave, the irradiation time, and the number of times of irradiation are controlled, and the substrate temperature is It is preferable to adjust the surface temperature of the thin film containing the precursor to 50 ° C. to 200 ° C. in the range of 200 ° C. to 600 ° C.

  The surface temperature of the conductive particle-containing layer, the substrate temperature, and the like in the step of irradiating electromagnetic waves can be measured with a surface thermometer using a thermocouple or a non-contact surface thermometer.

(Conductive layer)
The conductive layer according to the present invention will be described.

  When the precursor layer according to the present invention contains particles that absorb electromagnetic waves and the above-mentioned metal fine particles, the functional layer obtained by conversion treatment by electromagnetic wave irradiation can be preferably used as a conductive layer. .

  The conductive layer according to the present invention is preferably used as an electrode of the electronic device of the present invention and a thin film transistor element which is an example of the electronic device.

  Specifically, a conductive layer containing a conductive material used for electrodes such as a source electrode, a drain electrode, and a gate electrode constituting a thin film transistor element which is a preferable example of the electronic device of the present invention is preferable.

  The conductive layer according to the present invention is a precursor layer containing, as a constituent material, a metal salt selected from nitrate, sulfate, phosphate, carbonate, acetate or oxalate and / or metal nanoparticles and metal oxide fine particles. Electromagnetic wave irradiation is performed, and the functional layer is converted into a conductive layer containing a conductive material.

  In addition, the heat treatment is performed by irradiating electromagnetic waves and generating particles that absorb the electromagnetic waves. However, from the viewpoint of rapid conversion to metal oxide semiconductors and conductive materials by oxidation, oxygen is present. Below, it is preferable that heating and oxidation treatment are performed by microwave irradiation.

(Semiconductor active layer)
The semiconductor active layer according to the present invention will be described.

  The semiconductor active layer according to the present invention includes a metal salt selected from nitrates, sulfates, phosphates, carbonates, acetates or oxalates as a precursor of a metal oxide semiconductor, and a conductive material containing a metal component of the metal oxide. A layer containing a metal oxide semiconductor by irradiating an electromagnetic wave to the conductive particle-containing layer after providing a conductive particle-containing layer serving as a precursor of the metal oxide semiconductor using the particles (semiconductor active layer) Those converted to are preferred.

(Metal oxide semiconductor)
As the metal oxide semiconductor contained in the semiconductor active layer, any state of single crystal, polycrystal, and amorphous can be used, but an amorphous oxide is preferably used.

The electron carrier concentration of an amorphous oxide, which is a metal oxide according to the present invention, formed from a metal compound material that is a precursor of a metal oxide semiconductor only needs to be less than 10 ¹⁸ / cm ³ .

  The metal atoms contained in the formed metal oxide semiconductor are indium (In), tin (Sn), and zinc (Zn) as described in the description of the precursor (also referred to as precursor material). In addition, it is preferable that the other metal contains gallium (Ga) in its composition.

  Moreover, when preparing the precursor solution which contains these metals as a component, as a preferable metal composition ratio, the metal (metal A) contained in the salt chosen from the metal salt of In and Sn, Ga, and Al The molar ratio (metal A: metal B: metal C) of the metal (metal B) contained in the salt selected from metal salts and the metal (metal C = Zn) contained in the metal salt of Zn is as follows: It is preferable to satisfy the relational expression.

Metal A: Metal B: Metal C = 1: 0.2-1.5: 1-5
As the metal salt, nitrate is most preferable. Therefore, the molar ratio (A: B: C) of In, Sn (metal A), Ga, Al (metal B), and Zn (metal C) is as described above. It is preferable to form a precursor thin film containing a metal inorganic salt by coating using a coating solution in which nitrate of each metal is dissolved and formed in a solvent containing water as a main component so as to satisfy the formula.

  The electron carrier concentration is a value when measured at room temperature. The room temperature is, for example, 25 ° C., specifically, a certain temperature appropriately selected from the range of about 0 ° C. to 40 ° C.

In addition, the electron carrier density | concentration of the amorphous oxide which concerns on this invention does not need to satisfy less than 10 < ¹⁸ > / cm < ³ > in the whole range of 0 to 40 degreeC.

For example, a carrier electron density of less than 10 ¹⁸ / cm ³ may be realized at 25 ° C. Further, when the electron carrier concentration is further reduced to 10 ¹⁷ / cm ³ or less, more preferably 10 ¹⁶ / cm ³ or less, a normally-off TFT can be obtained with a high yield.

  The electron carrier concentration can be measured by Hall effect measurement.

  As the film thickness of the semiconductor active layer containing the metal oxide semiconductor, the characteristics of the obtained transistor are often greatly influenced by the film thickness of the semiconductor film, and the film thickness varies depending on the semiconductor, but is generally 1 μm. The following is preferable, and the range of 10 nm to 300 nm is particularly preferable.

In the present invention, the precursor material (metal salt), composition ratio, production conditions, and the like are controlled, and for example, the electron carrier concentration is preferably 10 ¹² / cm ³ or more and less than 10 ¹⁸ / cm ^3. More preferably, it is 10 ¹³ / cm ³ or more and 10 ¹⁷ / cm ³ or less, and particularly preferably in the range of 10 ¹⁵ / cm ³ or more and 10 ¹⁶ / cm ³ or less.

(Thickness of semiconductor active layer or conductive layer)
The film thickness of the semiconductor active layer containing a metal oxide semiconductor or the conductive layer containing a conductive material, formed by oxidation treatment of metal ions, is preferably 1 nm to 200 nm, more preferably 5 nm to 100 nm.

(Electronic device)
The electronic device of the present invention will be described.

  The conductive particle-containing layer according to the present invention can be used for forming various elements, electronic circuits, and the like. After the conductive particle-containing layer is formed directly or indirectly on the substrate by coating or the like, the functional layer is formed. The semiconductor active layer and the conductive layer can be manufactured by a low-temperature process by performing conversion to, and can be preferably applied to the manufacture of an electronic device using a resin substrate, particularly a thin film transistor element (TFT element).

  In addition, the conductive particle-containing layer is cleaned by a dry cleaning process such as oxygen plasma or UV ozone cleaning after the formation and before the electromagnetic wave irradiation, in the conductive particle-containing layer or in the conductive particle layer. It is also preferable to decompose and wash organic substances that are present on the surface and cause impurities to exclude organic substances other than metal components.

  Next, among the electronic devices manufactured by the functional layer manufacturing method of the present invention, a thin film transistor element that is particularly preferably used will be described as an example.

<< Thin film transistor element >>
A thin film transistor element which is a preferable example of the electronic device of the present invention will be described with reference to FIG.

  The electronic device having a conductive layer obtained by the method for producing a functional layer of the present invention can be suitably used for a thin film transistor element having a semiconductor active layer.

(Element structure)
FIG. 1 is a cross-sectional view showing a configuration example of a thin film transistor element of the present invention.

  The structural example of the thin-film transistor element using the circuit pattern manufactured with the manufacturing method of the electrode of this invention is shown to Fig.1 (a)-(f) with sectional drawing. In FIG. 1, the semiconductor layer 1 is preferably configured such that a source electrode 2 and a drain electrode 3 are connected as a channel.

  In FIG. 6A, after forming the source electrode 2 and the drain electrode 3 on the substrate 6 by the method of the present invention, the semiconductor layer 1 is formed between both electrodes, and the gate insulating layer 5 is formed thereon. Further, a gate electrode 4 is formed thereon to form a thin film transistor element. In FIG. 5B, the semiconductor layer 1 formed between both electrodes in FIG. 5A is formed so as to cover the entire surface of the electrode and the support using a coating method or the like to form a thin film transistor element. Is. In FIG. 2C, the semiconductor layer 1 is first formed on the substrate 6, and then the source electrode 2 and the drain electrode 3 are formed by the method of the present invention, and the gate insulating layer 5 and the gate electrode 4 are formed thereon. Thus, a thin film transistor element is formed. In FIG. 4D, after forming the gate electrode 4 with a metal foil or the like on the substrate 6, the insulating layer 5 is formed, and the source electrode 2 and the drain electrode 3 are formed thereon by the method of the present invention. A semiconductor layer 1 is formed between the electrodes to form a thin film transistor element. In addition, a configuration as shown in FIGS. In the present invention, for the purpose of making it difficult to transmit thermal damage to the substrate, a gate insulating film is formed between the substrate and the semiconductor layer. For example, the configurations of FIGS. 1D to 1F are preferable. .

  FIG. 2 is a schematic equivalent circuit diagram of an example of a thin film transistor sheet in which a plurality of thin film transistor elements of the present invention are arranged.

  The thin film transistor sheet 10 has a large number of thin film transistor elements 14 arranged in a matrix. Reference numeral 11 denotes a gate bus line of the gate electrode of each thin film transistor element 14, and reference numeral 12 denotes a source bus line of the source electrode of each thin film transistor element 14. An output element 16 is connected to the drain electrode of each thin film transistor element 14, and the output element 16 is, for example, a liquid crystal or an electrophoretic element, and constitutes a pixel in the display device. In the illustrated example, a liquid crystal is shown as an output element 16 by an equivalent circuit composed of a resistor and a capacitor. 15 is a storage capacitor, 17 is a vertical drive circuit, and 18 is a horizontal drive circuit.

  The method of the present invention can be used for manufacturing such a thin film transistor sheet in which TFT elements are two-dimensionally arranged on a substrate.

  In addition, a protective layer can be provided on the thin film transistor element of the present invention. Examples of the protective layer include inorganic oxides or inorganic nitrides which will be described later, and the protective layer is preferably formed by the atmospheric pressure plasma method described above.

  Hereinafter, each element which comprises a thin-film transistor element is demonstrated.

<< Substrate (also referred to as substrate, base material, etc.) >>
The substrate used in the present invention will be described.

  Various materials can be used as the support material constituting the substrate, for example, ceramic substrates such as glass, quartz, aluminum oxide, sapphire, silicon nitride, silicon carbide, silicon, germanium, gallium arsenide, gallium phosphide. In addition, a semiconductor substrate such as gallium nitrogen, paper, non-woven fabric and the like can be used. In the present invention, the support is preferably made of a resin, for example, a plastic film sheet can be used. Examples of plastic films include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyetherimide, polyetheretherketone, polyphenylene sulfide, polyarylate, polyimide, polycarbonate (PC), and cellulose. Examples include films made of triacetate (TAC), cellulose acetate propionate (CAP), and the like. By using a plastic film, the weight can be reduced as compared with the case of using a glass substrate, the portability can be improved, and the resistance to impact can be improved.

<Gate insulation layer>
Various insulating films can be used as the gate insulating layer (film) of the thin film transistor element of the present invention, and an inorganic oxide film having a high relative dielectric constant is particularly preferable. Inorganic oxides include silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, lead zirconate titanate, lead lanthanum titanate, strontium titanate, Examples thereof include barium titanate, barium magnesium fluoride, bismuth titanate, strontium bismuth titanate, strontium bismuth tantalate, bismuth tantalate niobate, and trioxide yttrium. Of these, silicon oxide, aluminum oxide, tantalum oxide, and titanium oxide are preferable. Inorganic nitrides such as silicon nitride and aluminum nitride can also be suitably used.

  Examples of the method for forming the film include a vacuum process, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, an atmospheric pressure plasma method, and the like, spraying Examples include a wet process such as a coating method, a spin coating method, a blade coating method, a dip coating method, a casting method, a roll coating method, a bar coating method, a coating method such as a die coating method, and a patterning method such as printing or inkjet. Can be used depending on the material.

  The wet process is a method of applying and drying a liquid in which fine particles of inorganic oxide are dispersed in an arbitrary organic solvent or water using a dispersion aid such as a surfactant as necessary, or an oxide precursor, for example, A so-called sol-gel method in which a solution of an alkoxide body is applied and dried is used. Among these, the atmospheric pressure plasma method is preferable.

  It is also preferable that the gate insulating layer (film) is composed of an anodized film or the anodized film and an insulating film. The anodized film is preferably sealed. The anodized film is formed by anodizing a metal that can be anodized by a known method.

  Examples of the metal that can be anodized include aluminum and tantalum, and the anodizing method is not particularly limited, and a known method can be used.

  Examples of the organic compound film include polyimide, polyamide, polyester, polyacrylate, photo-curing polymer of photo radical polymerization system, photo cation polymerization system, copolymer containing acrylonitrile component, polyvinyl phenol, polyvinyl alcohol, novolac resin, etc. Can also be used.

  An inorganic oxide film and an organic oxide film can be laminated and used together. The thickness of these insulating films is generally preferably in the range of 50 nm to 3 μm, and more preferably in the range of 100 nm to 1 μm.

<< Organic electroluminescence element (also referred to as organic EL element) >>
The thin film transistor element which is a preferable example of the electronic device of the present invention can be preferably used for an organic electroluminescence element. Next, a method for manufacturing an organic EL element will be described.

  On a substrate having a thin film transistor element (in the case of an organic EL element, a switching thin film transistor element, a driving thin film transistor element, etc. are generally provided), a thin film made of an electrode material, for example, an anodic material is 1 μm or less, preferably 10 nm. An anode is produced by a method such as vapor deposition or sputtering so that the film thickness is in the range of ˜200 nm.

  After forming each layer thin film consisting of a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer, etc. on the anode, a thin film made of a cathode material is 1 μm thereon. In the following, an organic EL element is obtained by forming the film preferably in the range of 50 nm to 200 nm and providing a cathode.

  The organic EL device used in the present invention can form a cathode on the organic material more easily without damaging the organic material layer by forming the cathode by the method for producing an electrode of the present invention. Furthermore, each organic thin film layer consisting of a hole injection layer, a hole transport layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer is formed by coating, and a cathode is also a function of the present invention. Production efficiency can be drastically improved by producing the production method of the conductive layer.

  When a DC voltage is applied to the organic EL element thus obtained, light emission can be observed by applying a voltage of about 5V to 40V with the anode as + and the cathode as-. Further, even when a voltage is applied with the opposite polarity, no current flows and no light emission occurs.

  Further, when an AC voltage is applied, light is emitted only when the anode is in the + state and the cathode is in the-state. The alternating current waveform to be applied may be arbitrary.

  Hereinafter, the present invention will be specifically described, but the embodiments of the present invention are not limited thereto.

  In addition, the structure of the compound used for an Example is shown below.

Example 1
<< Manufacture of Thin Film Transistor Element 1 >> Bottom Gate / Top Contact Configuration An example of the manufacturing process of the thin film transistor of the present invention will be described with reference to FIG.

  An ITO film was produced by sputtering using the support 6 (glass substrate) and patterned to form the gate electrode 4 (thickness 100 nm).

  Next, a gate insulating film 5 made of silicon oxide having a thickness of 200 nm was formed by atmospheric pressure plasma CVD (FIG. 4A).

  In addition, the atmospheric pressure plasma processing apparatus used the apparatus according to FIG. 6 described in Unexamined-Japanese-Patent No. 2003-303520.

(Used gas)
Inert gas: helium 98.25% by volume
Reactive gas: oxygen gas 1.5 volume%
Reactive gas: Tetraethoxysilane vapor (bubbled with helium gas) 0.25% by volume
(Discharge conditions)
High frequency power supply: 13.56 MHz
Discharge output: 10 W / cm ²
(Electrode condition)
The electrode is coated with 1 mm of alumina by ceramic spraying on a stainless steel jacket roll base material having cooling means with cooling water, and then a solution obtained by diluting tetramethoxysilane with ethyl acetate is applied and dried, and then sealed by ultraviolet irradiation. This is a roll electrode having a dielectric (relative permittivity of 10) that has been subjected to hole treatment and has a smooth surface and an Rmax of 5 μm, and is grounded. On the other hand, as the application electrode, a hollow rectangular stainless steel pipe was coated with the same dielectric as described above under the same conditions.

  Next, as a semiconductor precursor material, a solution obtained by dissolving 0.8 g of the following bicycloporphyrin compound in 1.25 g of chloroform is used as an ink, and is ejected to the channel forming portion on the gate insulating film by an ink jet method and dried to form a film. Then, a conductive particle-containing layer (used for forming a semiconductor active layer) 1 'having a thickness of 30 nm was formed (FIG. 4 (2)).

Thereafter, a conductor 7 (silicon wafer heavily doped with Sb ³⁺ ions on the other side of the support 6 (opposite the side having the conductive particle-containing layer 1 ′) (specific resistance: 2 × 10 ⁻² Ωcm) Then, in an atmosphere having a partial pressure of oxygen and nitrogen of 1: 1, microwaves (2.45 GHz) were irradiated at an output of 500 W under atmospheric pressure conditions. The microwave irradiation was held at 200 ° C. for 15 minutes while adjusting the electromagnetic wave output.

  By irradiating the microwave, the conductive particle-containing layer (used for forming the semiconductor active layer) 1 ′ is first heated to a high temperature by the gate electrode 4 made of ITO, and then on the gate insulating layer 5. The conductive particle-containing layer (used for forming the semiconductor active layer) 1 ′ (which is a bicycloporphyrin compound-containing layer) in the channel forming portion is also heated to the same extent as the electrode portion and thermally decomposed (TBP: tetra A benzoporphyrin copper complex) film was converted into a semiconductor active layer 1 having a thickness of 50 nm (FIG. 4 (3)).

Next, the conductor 7 (a silicon wafer heavily doped with Sb ³⁺ ions (specific resistance: 2 × 10 ⁻² Ωcm)) and the support 6 are separated from each other, and gold is deposited through a mask, whereby the source electrode 2 The drain electrode 3 was formed to manufacture the thin film transistor element 1 (FIG. 4 (4)).

  Each size was 10 μm wide, 50 μm long (channel width) and 50 nm thick, and the distance between the source electrode and the drain electrode (channel length) was 15 μm.

  The obtained thin film transistor element 1 exhibited p-type enhancement operation. When the drain bias was −10 V and the gate bias was swept from +10 V to −40 V, an increase in drain current (transfer characteristics) was observed.

The mobility estimated from the saturation region was 1.0 cm ² / Vs, the On / Off ratio was 6 digits, and it was driven well and showed a p-type enhancement operation.

  From the increase in the drain current, the semiconductor active layer 1 obtained by using the method for producing a functional layer of the present invention is based on abnormal discharge caused by microwave irradiation, cracking in the irradiated region, carbonization of constituent materials, etc. It is clear that deterioration due to is properly prevented.

Example 2
<< Manufacture of Thin Film Transistor Element 2 >> Bottom Gate / Top Contact Configuration An example of a manufacturing example of the thin film transistor of the present invention will be described with reference to FIG.

  Using a support 6 (glass substrate), maintaining the substrate temperature at 100 ° C., a gold nanoparticle ink (prepared by a method according to the method described in JP-A No. 11-80647) is gate electrode-like by an inkjet method. Then, a conductive particle-containing layer 4 ′ for forming an electrode having a thickness of 100 nm was formed (FIG. 5 (1)).

  Next, an electromagnetic wave absorbing layer 4 ″ made of ITO fine particles is formed on the conductive particle-containing layer 4 ′ for forming the (gate) electrode using an ITO nano-particle ink (Chiai Kasei NanoTek Slurry ITO (toluene)) by the inkjet method in the same manner. Was patterned (thickness 50 nm) (FIG. 5 (2)).

  Next, an insulating film precursor material layer 5 ′ is formed using aquamica NN110 (perhydropolysilazane / xylene solution: manufactured by AZ Electronic Material) (thickness 200 nm), and after drying, a channel forming portion is formed with In, Zn, Ga. A conductive particle-containing layer 1 ′ for forming a semiconductor active layer mixed with salt is formed by patterning by an ink jet method, and a source electrode precursor is prepared by an ink jet method using the ITO fine particle nano ink according to the source electrode and drain electrode patterns. A body film 2 'and a drain electrode precursor film 3' were formed (FIG. 5 (3)).

  Next, a conductive particle-containing layer 4 ′ for forming an electrode, an electromagnetic wave absorbing layer 4 ″, an insulating film precursor material layer 5 ′, a conductive particle-containing layer 1 ′ for forming a semiconductor active layer, and a source electrode precursor film 2 ′. After placing the conductor 7 on the other surface of the support 6 (glass substrate) on which the drain electrode precursor film 3 'was formed, microwave irradiation was performed as follows.

  In addition, the conductor 7 is arrange | positioned only at the time of microwave irradiation at the support body 6 (glass substrate), and the conductor 7 is isolate | separated after microwave irradiation.

  That is, microwaves (2.45 GHz) were irradiated with an output of 500 W under an atmospheric pressure condition in an atmosphere having a partial pressure of oxygen and nitrogen of 1: 1. Microwave irradiation was performed for 4 cycles, with one cycle being 90 sec.

  The electromagnetic wave absorbing layer 4 ″ (gate electrode), and the source electrode precursor film 2 ′ and the drain electrode precursor film 3 ′ made of ITO generate heat by absorption of microwaves, and the conductive particle-containing layer 4 ′ for electrode formation. , Insulating film precursor material layer 5 ′, conductive particle-containing layer 1 ′ for forming a semiconductor active layer, source electrode precursor film 2 ′, and drain electrode precursor film 3 ′ are respectively a gate electrode, a gate insulating layer 5, Conversion into the semiconductor active layer 1, the source electrode 2 and the drain electrode 3 at the same time yielded a thin film transistor element 2 (FIG. 5 (4)).

The manufactured thin film transistor element 2 has a mobility of 5 cm ² / Vs or more, an On / Off ratio of 5 digits or more, and is driven well to the gate electrode, insulating layer, semiconductor active layer, source electrode, and drain electrode. It can be seen that the conversion was performed.

  Since the thin film transistor element 2 of the present invention exhibits good characteristics, the gate electrode, the gate insulating layer 5, the semiconductor active layer 1, the source electrode 2, and the gate electrode obtained by using the functional layer manufacturing method of the present invention It is apparent that each of the drain electrodes 3 is appropriately prevented from generating cracks in the irradiated region based on abnormal discharge caused by microwave irradiation during manufacturing.

DESCRIPTION OF SYMBOLS 1 Semiconductor active layer 2 Source electrode 3 Drain electrode 4 Gate electrode 5 Gate insulating layer 10 Thin-film transistor sheet 11 Gate bus line 12 Source bus line 14 Thin-film transistor element 15 Storage capacitor 16 Output element 17 Vertical drive circuit 18 Horizontal drive circuit

Claims (8)

In the method for producing a functional layer having a step of irradiating the conductive particle-containing layer with electromagnetic waves,
A method for producing a functional layer comprising the step of irradiating the electromagnetic wave after disposing the conductive particle-containing layer on the conductor at a distance of 1 mm or less from the conductor . The method for producing a functional layer according to claim 1, wherein the conductive particle-containing layer is formed on a substrate and disposed on the conductor via the substrate. The method for producing a functional layer according to claim 1, wherein the electromagnetic wave is irradiated in an oxygen-excess atmosphere as compared with an air atmosphere. The method for producing a functional layer according to any one of claims 1 to 3, wherein at least one of the functional layers is a conductive layer. At least one layer, the manufacturing method of the functional layer according to claim 1, characterized in that the semiconductor active layer of the functional layer. The surface area of the conductive particle-containing layer is, the manufacturing method of the functional layer according to any one of claims 1 to 5, wherein the or less surface area of the conductor. Method for producing a functional layer according to any one of claims 1 to 6, wherein the conductive particle-containing layer is characterized in that it comprises at least In, oxides of Zn or Sn. Method for producing a functional layer according to any one of claims 1 to 7, wherein the electromagnetic wave is a microwave.