JP2010182852A - Metal oxide semiconductor, manufacturing method therefor, and thin-film transistor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve a lower process temperature in the formation of a metal oxide semiconductor to enable manufacturing of a thin-film transistor using a resin substrate. <P>SOLUTION: According to a manufacturing method for a metal oxide semiconductor, a solution or a dispersion solution of a metal oxide semiconductor precursor is applied to a substrate to obtain a metal oxide semiconductor precursor film which is transformed to form the metal oxide semiconductor. In the manufacturing method, two kinds of surface energy components γh and γd on the substrate surface at the application of the metal oxide semiconductor precursor satisfy the conditions: 10≤γh≤80 (mN/m), 2≤γd≤40 (mN/m). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for producing a metal oxide semiconductor, in which a metal oxide precursor film is produced by a coating process and a semiconductor conversion process is performed on the precursor to produce a metal oxide semiconductor. The present invention relates to a method for manufacturing a metal oxide semiconductor by a coating process in which control is performed. Further, the present invention relates to a thin film transistor using the metal oxide semiconductor.

  Thin film transistors using metal oxide semiconductors are known.

  For example, Patent Documents 1 to 3 disclose a technique of a thin film transistor using a metal oxide semiconductor. Although TFTs using these metal oxide semiconductors exhibit high performance, vacuum processes such as pulsed laser deposition and sputtering are used. Further, the process temperature is high and a resin substrate cannot be used. Furthermore, the energy efficiency is poor, for example, a high temperature is required for the sintering of the target.

  Also known is a method of forming an amorphous metal oxide semiconductor by decomposing and oxidizing (heating, decomposing reaction) a metal salt or an organic metal (see, for example, Patent Documents 4 and 5).

  In these, thermal oxidation or plasma oxidation is used for oxidation of the precursor. However, even when thermal oxidation of these precursors is used, it is usually difficult to achieve the required performance unless the treatment is performed at a very high temperature range of 300 ° C. or higher and substantially 400 ° C. or higher. Therefore, even in these cases, energy efficiency is poor, a relatively long processing time is required, and performance variations are likely to occur, and the substrate temperature during processing rises to the same temperature as the processing temperature. It is difficult to apply to a resin substrate that is light and flexible.

  In the present invention, since the precursor material of the metal oxide semiconductor is applied, efficient production is possible under normal pressure, not under vacuum, and a high-quality metal oxide semiconductor film can be formed by a low temperature process. A device using a thin film transistor element using a physical semiconductor can be applied to a resin substrate.

JP 2006-165527 A JP 2006-165528 A JP 2007-73705 A JP 2003-179242 A JP 2005-223231 A

  An object of the present invention is to make it possible to manufacture a thin film transistor using a resin substrate by achieving a low process temperature in forming a metal oxide semiconductor.

  The above object of the present invention can be achieved by the following configuration.

  1. Metal oxide semiconductor manufacturing method for forming metal oxide semiconductor by converting metal oxide semiconductor precursor film obtained by applying metal oxide semiconductor precursor solution or dispersion onto substrate The two surface energy components γh and γd on the substrate surface when the metal oxide semiconductor precursor is applied are 10 ≦ γh ≦ 80 (mN / m) and 2 ≦ γd ≦ 40 (mN / m). A method for producing a metal oxide semiconductor.

  2. 2. The method for producing a metal oxide semiconductor according to 1, wherein the metal oxide semiconductor precursor film is formed by applying an aqueous solution of a metal oxide semiconductor precursor.

  3. 3. The method for producing a metal oxide semiconductor according to 1 or 2, wherein the metal oxide semiconductor is an amorphous metal oxide.

  4). 4. The method for producing a metal oxide semiconductor according to any one of 1 to 3, wherein the metal oxide semiconductor contains any element of In, Zn, and Sn.

  5. 5. The method for producing a metal oxide semiconductor according to any one of 1 to 4, wherein the metal oxide semiconductor contains Ga or Al.

  6). 6. The method for producing a metal oxide semiconductor as described in 4 or 5 above, wherein the metal oxide semiconductor contains only In and Ga as metal elements.

  7). 7. The method for producing a metal oxide semiconductor according to any one of 1 to 6, wherein the substrate is a plastic base material.

  8). 8. The method for producing a metal oxide semiconductor according to any one of 1 to 7, wherein the conversion is performed at 100 to 250 ° C.

  9. 9. The method for producing a metal oxide semiconductor according to any one of 1 to 8, wherein the conversion to the metal oxide semiconductor is performed by microwave heating.

  10. 10. A metal oxide semiconductor produced by the method for producing a metal oxide semiconductor according to any one of 1 to 9 above.

  11. 10. A thin film transistor using a metal oxide semiconductor produced by the method for producing a metal oxide semiconductor according to any one of 1 to 9 above.

  According to the present invention, the process temperature in forming a metal oxide semiconductor can be lowered, the production efficiency can be improved, the variation in performance of the thin film transistor can be reduced, and the thin film transistor is manufactured using the resin substrate. be able to.

It is a figure which shows the typical structure of a thin-film transistor element. It is an equivalent circuit schematic of an example of a thin film transistor sheet. It is a cross-sectional schematic diagram which shows each process of thin-film transistor manufacture.

  In the present invention, the metal oxide semiconductor is formed from a coating film of a solution or dispersion of a semiconductor precursor.

  Since it is formed by coating, that is, a wet process, a precursor thin film having a uniform film thickness is formed without the need for vacuum equipment, and this is converted into a metal oxide semiconductor by heat treatment or plasma oxidation. Since it is formed, a metal oxide semiconductor can be easily formed without using a large-scale vacuum facility and without performing a high-temperature baking treatment after film formation such as sputtering. Can be manufactured at a relatively low temperature.

Until now, for example, an In—Ga—Zn—O-based amorphous metal oxide semiconductor film has been formed by vapor phase deposition using a polycrystalline sintered body represented by an InGaO ₃ (ZnO) _m (m = 1 to 5) composition as a target. It is formed by a film method.

  These amorphous thin-film metal oxide semiconductors have high mobility and high performance, but are usually formed by pulse laser deposition or sputtering, and therefore require a considerably high temperature. In manufacturing, a very high temperature of 1000 ° C. or higher is required. Therefore, it has been difficult to form a semiconductor on a plastic substrate.

  Although the formation by the wet process is lower in temperature than the above sputtering method or the like, depending on the composition of the metal composition and the like, it is difficult to reduce the temperature sufficiently. The conversion process to semiconductor is desirable.

  The present invention has found a configuration in which a coating film of a semiconductor precursor is thermally converted to a metal oxide semiconductor by heat treatment at 250 ° C. or lower and a metal oxide semiconductor having high mobility is obtained.

  In the present invention, by applying a coating film of a solution or dispersion of a semiconductor precursor material on a substrate and setting the surface energy of the substrate within a specific range, conversion processing such as thermal oxidation or plasma irradiation is relatively performed. Even when applied at a low temperature, the precursor material can be converted into a good metal oxide semiconductor.

(Metal oxide semiconductor precursor material)
The metal oxide semiconductor precursor material means a material that is converted into a semiconductor layer made of a metal oxide by a conversion process such as thermal oxidation or plasma oxidation. Specifically, for example, the following metal atom-containing compound is Can be mentioned.

  Examples of the metal atom-containing compound include metal salts, metal halide compounds, and organometallic compounds containing metal atoms.

  Metals of metal salts, metal halide compounds, and organometallic compounds include Li, Be, B, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, Rb, Sr, Y, Zr, Nb, Mo, Cd, In, Ir, Sn, Sb, Cs, Ba, La, Hf, Ta, W, Tl, Pb, Bi, Ce, Examples include Pr, Nd, Pm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

  In the present invention, these metal salts preferably contain one or more of any of indium (In), tin (Sn), and zinc (Zn), and they may be used in combination.

  Moreover, it is preferable that the other metal contains a salt of either gallium (Ga) or aluminum (Al).

  Among them, it is more preferable that the metal is composed of indium (In) and gallium (Ga).

  Preferred metal salts include nitrates, acetates, oxalates, sulfates, phosphates, carbonates, acetylacetonate salts, and preferred metal halides include chlorides, iodides, bromides, fluorides, etc. Can be used.

  In the case of using an organometallic compound, those represented by the following general formula (I) may be mentioned.

Formula (I)
R ¹ _x MR ² _y R ³ _z
In the formula, M is a metal, R ¹ is an alkyl group, R ² is an alkoxy group, R ³ is a β-diketone complex group, a β-ketocarboxylic acid ester complex group, a β-ketocarboxylic acid complex group, and a ketooxy group (ketooxy complex group). X + y + z = m, x = 0 to m, or x = 0 to m−1, and y = 0 to m, z = 0. ~ M, each of which is 0 or a positive integer. Examples of the alkyl group for R ¹ include a methyl group, an ethyl group, a propyl group, and a butyl group. Examples of the alkoxy group for R ² include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, and a 3,3,3-trifluoropropoxy group. Further, a hydrogen atom in the alkyl group may be substituted with a fluorine atom. Examples of the β-diketone complex group of R ³ include 2,4-pentanedione (also referred to as acetylacetone or acetoacetone), 1,1,1,5,5,5-hexamethyl-2,4-pentanedione, 2, 2,6,6-tetramethyl-3,5-heptanedione, 1,1,1-trifluoro-2,4-pentanedione, and the like. Examples of the β-ketocarboxylic acid ester complex group include acetoacetic acid Examples include methyl ester, ethyl acetoacetate, propyl acetoacetate, ethyl trimethylacetoacetate, and methyl trifluoroacetoacetate. Examples of β-ketocarboxylic acid include acetoacetate and trimethylacetoacetate. In addition, as ketooxy group, for example, acetooxy group (or acetoxy group), propylene An onyloxy group, a butyryloxy group, an acryloyloxy group, a methacryloyloxy group, etc. can be mentioned. These groups preferably have 18 or less carbon atoms. Further, it may be linear or branched, or a hydrogen atom may be a fluorine atom. Among organometallic compounds, those having at least one oxygen in the molecule are preferable. As such, an organometallic compound containing at least one alkoxy group of R ² , a β-diketone complex group, a β-ketocarboxylic acid ester complex group, a β-ketocarboxylic acid complex group and a ketooxy group (ketooxy group) of R ³ Most preferred are metal compounds having at least one group selected from (complex groups).

  Of the above metal oxide semiconductor precursors, preferred are metal nitrates, metal acetylacetonate salts, metal halides, and alkoxides. Specific examples include indium nitrate, zinc nitrate, gallium nitrate, tin nitrate, aluminum nitrate, indium (trivalent) acetylacetonate, gallium (trivalent) acetylacetonate, zinc (trivalent acetylacetonate), aluminum (3 Valence) acetylacetonate, indium chloride, zinc chloride, tin chloride (divalent), tin chloride (tetravalent), gallium chloride, aluminum chloride, tri-i-propoxyindium, diethoxyzinc, bis (dipivaloylmethanato) Zinc, tetraethoxytin, tetra-i-propoxytin, tri-i-propoxygallium, tri-i-propoxyaluminum and the like can be mentioned.

  Among the metal salts, nitrate is preferable. Nitrate is easily available as a high-purity product and has high solubility in water, which is preferable as a medium for use. Examples of the nitrate include indium nitrate, gallium nitrate, aluminum nitrate, zinc nitrate, and tin nitrate.

  In particular, the effect of improving the semiconductor characteristics obtained with nitrate is particularly remarkable in an amorphous metal oxide semiconductor obtained at a heating temperature of 100 ° C. or higher and 400 ° C. or lower. It has not been known so far that a good state of an amorphous oxide semiconductor can be obtained with a semiconductor thin film made of a metal salt as a raw material, which can be said to be a remarkable effect obtained by the present invention.

(Metal oxide semiconductor precursor film formation method, patterning method)
In order to form a thin film containing a metal salt which is a precursor of these metal oxide semiconductors, a known film formation method, vacuum deposition method, molecular beam epitaxial growth method, ion cluster beam method, low energy ion beam method, An ion plating method, a CVD method, a sputtering method, an atmospheric pressure plasma method, or the like can be used. In the present invention, it is preferable to apply a solution obtained by dissolving a precursor metal compound in an appropriate solvent on a substrate. This can greatly improve productivity. Also from these viewpoints, as the metal compound, it is more preferable to use chloride, nitrate, acetate, acetylacetonate salt, metal alkoxide, and the like from the viewpoint of solubility. Of these, nitrate is preferable.

  The solvent is not particularly limited as long as it dissolves the metal compound to be used in addition to water, but water, alcohols such as methanol, ethanol, propanol and ethylene glycol, ethers such as tetrahydrofuran and dioxane, etc. , Esters such as methyl acetate and ethyl acetate, ketones such as acetone, methyl ethyl ketone and cyclohexanone, glycol ethers such as diethylene glycol monomethyl ether, acetonitrile and the like, and aromatic solvents such as xylene and toluene, hexane, cyclohexane, Aliphatic hydrocarbon solvents such as tridecane, α-terpineol, alkyl halide solvents such as chloroform and 1,2-dichloroethane, N-methylpyrrolidone, carbon disulfide and the like can be suitably used.

  The solvent used in the metal salt solution of the present invention is not particularly limited as long as it is a solvent in which the metal salt dissolves, but water and lower alcohol are preferable from the viewpoint of solubility of the metal salt and drying property after coating, and lower alcohol Among these, methanol, ethanol, and propanol (1-propanol and isopropanol) are preferable from the viewpoint of drying property. Moreover, a lower alcohol may be used alone as a solvent, or may be used by mixing with water at an arbitrary ratio. From the viewpoint of solubility, solution stability, and drying properties, it is preferable to prepare water solution of the present invention by mixing water and these lower alcohols. When an aqueous solution is prepared by mixing a lower alcohol, the surface tension can be lowered without greatly changing the composition.

  Further, as an effect of adding alcohols, an effect of improving semiconductor characteristics is recognized. For example, improvement in characteristics such as mobility, on / off ratio, and threshold value of a thin film transistor is recognized. Although the cause of this effect is not clear, it is presumed that it has an influence on the oxide formation process by heating.

  In addition, when considering semiconductor characteristics such as drying characteristics, inkjet emission characteristics, and thin film transistor characteristics, it is preferable to add a lower alcohol with a solvent ratio of 5 mass% or more, and to satisfy any characteristics (drying, emission characteristics and solution stability). The water / lower alcohol ratio is preferably 5/95 to 95/5.

  The aqueous solution of the present invention is a mixed solvent having a water content of 30% by mass or more in the solvent and water (water content = 100% by mass) as a solute (in the present invention, a metal salt and other additives added as necessary. ) Is dissolved. The water content is preferably 50% by mass or more, more preferably 70% by mass or more, from the viewpoint of the solubility of solutes such as metal salts and solution stability.

  Among the metal salts according to the present invention, nitrates having the properties such as deterioration with respect to water, decomposition, easy dissolution, and excellent properties such as deliquescence are most preferable.

  Addition of metal alkoxide and various ligands such as alkanolamines, α-hydroxy ketones, β-diketones and other chelating ligands in the solvent stabilizes the metal alkoxide and the solubility of the carboxylate. It is preferable to add in a range that does not cause adverse effects.

  In the present invention, a thin film containing a metal oxide semiconductor precursor is formed by applying a solvent containing a metal salt on the substrate.

  As a method for forming a precursor thin film of a metal oxide semiconductor by applying a solution containing a metal salt on a substrate, a spray coating method, a spin coating method, a blade coating method, a dip coating method, a casting method, a roll Examples include coating methods such as coating methods, bar coating methods, die coating methods, mist coating methods, air doctor methods, and printing methods such as relief printing, intaglio printing, lithographic printing, transfer printing, screen printing, and inkjet printing. In addition, there is a method of patterning by this. The coating film may be patterned by photolithography, laser ablation, or the like. Among these, the ink jet method, spray coating method, etc. which can apply | coat a thin film are preferable. Among them, the electrostatic suction type super ink jet method is preferable because fine drawing is possible.

  For example, when forming into a film using an inkjet method, the semiconductor precursor layer thin film containing a metal salt is formed by dripping a metal salt solution and volatilizing a solvent (water) at about 80-100 degreeC. In addition, when dropping the solution, it is preferable to heat the substrate itself to about 80 ° C. to 150 ° C. because two processes of coating and drying can be performed simultaneously and the film forming property of the precursor film is good.

  The film thickness of the thin film containing the metal serving as the precursor is 1 to 200 nm, more preferably 5 to 100 nm.

(Composition ratio of metal)
By the method of the present invention, a metal oxide semiconductor thin film containing a single metal atom or a plurality of metal atoms selected from the metal atoms described above is produced. As the metal oxide semiconductor, any state of single crystal, polycrystal, and amorphous can be used, but an amorphous thin film is preferably used.

  The metal atom contained in the formed metal oxide semiconductor preferably contains any one of indium (In), tin (Sn), and zinc (Zn), as in the description of the precursor. It is preferable to contain gallium (Ga) or aluminum (Al).

  When preparing a precursor solution containing these metals as components, the preferred metal composition ratio is as follows: a metal (metal A) contained in a salt selected from metal salts of In and Sn, and metal salts of Ga and Al The molar ratio (metal A: metal B: metal C) of the metal (metal B) contained in the metal salt of Zn (metal B) and the metal (metal C = Zn) contained in the metal salt of Zn has the following relational expression: It is preferable to satisfy.

Metal A: Metal B: Metal C = 1: 0.2-1.5: 0-5
As the metal salt, nitrate is most preferable. Therefore, the molar ratio (A: B: C) of In, Sn (metal A), Ga, Al (metal B), and Zn (metal C) is the above relational expression. It is preferable to form a precursor thin film containing a metal inorganic salt by coating using a coating solution obtained by dissolving and forming each metal nitrate in a solvent containing water as a main component.

  Moreover, the film thickness of the thin film containing the metal inorganic salt used as a precursor is 1-200 nm, More preferably, it is 5-100 nm.

(Amorphous metal oxide)
As the metal oxide semiconductor to be formed, any state of single crystal, polycrystal, and amorphous can be used, but an amorphous thin film is preferably used. Amorphous can be confirmed by X-ray diffraction or electron diffraction, and can be regarded as amorphous if a diffraction pattern unique to the crystal is not observed.

The electron carrier concentration of the amorphous metal oxide, which is a metal oxide according to the present invention, formed from a metal compound material that is a precursor of a metal oxide semiconductor only needs to be realized to be less than 10 ¹⁸ / cm ^3. . The electron carrier concentration is a value when measured at room temperature. The room temperature is, for example, 25 ° C., specifically, a certain temperature appropriately selected from the range of about 0 ° C. to 40 ° C. Note that the electron carrier concentration of the amorphous metal oxide according to the present invention does not have to satisfy less than 10 ¹⁸ / cm ³ in the entire range of 0 ° C. to 40 ° C. For example, a carrier electron density of less than 10 ¹⁸ / cm ³ may be realized at 25 ° C. Further, when the electron carrier concentration is further reduced to 10 ¹⁷ / cm ³ or less, more preferably 10 ¹⁶ / cm ³ or less, a normally-off TFT can be obtained with a high yield.

  The electron carrier concentration can be measured by Hall effect measurement.

  The film thickness of the semiconductor that is a metal oxide is not particularly limited, but the characteristics of the obtained transistor are often greatly influenced by the film thickness of the semiconductor film, and the film thickness varies depending on the semiconductor. Generally, 1 μm or less, particularly 10 to 300 nm is preferable.

In the present invention, the precursor material, composition ratio, production conditions, and the like are controlled so that, for example, the electron carrier concentration is 10 ¹² / cm ³ or more and less than 10 ¹⁸ / cm ³ . More preferably, it is in the range of 10 ¹³ / cm ³ or more and 10 ¹⁷ / cm ³ or less, and more preferably 10 ¹⁵ / cm ³ or more and 10 ¹⁶ / cm ³ or less.

  Since the composition ratio of the precursor and the metal composition ratio of the metal oxide semiconductor to be formed do not necessarily match, in order to achieve the metal ratio in the metal oxide semiconductor to be formed, the mixture ratio of the precursor is set after firing. It is necessary to adjust and apply by trial so that the ratio in the metal oxide becomes the above value.

  Examples of the semiconductor conversion treatment, that is, a method of converting a precursor thin film formed from a metal inorganic salt into a metal oxide semiconductor include oxidation treatments such as an oxygen plasma method, a thermal oxidation method, and a UV ozone method. Further, microwave irradiation described later can be used.

  In the present invention, the temperature for heating the precursor material can be arbitrarily set within the range of the temperature of the thin film containing the precursor in the range of 50 ° C. to 1000 ° C. From the viewpoint of device characteristics of electronic devices and production efficiency. It is preferable that the temperature is 100 ° C to 400 ° C. The temperature of the thin film surface, the temperature of the substrate, etc. can be measured by a surface thermometer using a thermocouple, a radiation thermometer capable of measuring the radiation temperature, a fiber thermometer, or the like. The heating temperature can be controlled by the output of electromagnetic waves, the irradiation time, and the number of irradiations. The time for heating the precursor material can be arbitrarily set, but from the viewpoint of the characteristics of the electronic device and the production efficiency, a time of 1 second to 60 minutes is preferable. Preferably, it is 5 minutes to 30 minutes.

  Further, formation of the metal oxide can be detected by ESCA or the like, and conditions under which the conversion to the semiconductor is sufficiently performed can be selected in advance.

  As the oxygen plasma method, it is preferable to use an atmospheric pressure plasma method. In the oxygen plasma method and the UV ozone method, the substrate is preferably heated in the range of 50 ° C to 300 ° C.

  In the atmospheric pressure plasma method, an inert gas such as argon gas is used as a discharge gas under atmospheric pressure, and a reaction gas (a gas containing oxygen) is introduced into the discharge space, and a high frequency electric field is applied to the discharge gas. Is excited to generate plasma, and contact with a reactive gas to generate plasma containing oxygen, and the substrate surface is exposed to this to perform oxygen plasma treatment. Under atmospheric pressure represents a pressure of 20 to 110 kPa, preferably 93 to 104 kPa.

  Using an atmospheric pressure plasma method, oxygen-containing gas is used as a reactive gas to generate oxygen plasma, and the precursor thin film containing a metal salt is exposed to the plasma space, so that the precursor thin film is oxidized and decomposed by plasma oxidation. Thus, a layer made of a metal oxide is formed.

The high frequency power source is 0.5 kHz or more and 2.45 GHz or less, and the power supplied between the counter electrodes is preferably 0.1 W / cm ² or more and 50 W / cm ² or less.

  The gas to be supplied is basically a mixed gas of a discharge gas (inert gas) and a reaction gas (oxidizing gas). The reaction gas is preferably oxygen gas and is preferably contained in an amount of 0.01 to 10% by volume with respect to the mixed gas. Although it is more preferable that it is 0.1-10 volume%, More preferably, it is 0.1-5 volume%.

  Examples of the inert gas include Group 18 elements of the periodic table, specifically, helium, neon, argon, krypton, xenon, radon, nitrogen gas, and the like, in order to obtain the effects described in the present invention. For this, helium, argon, or nitrogen gas is preferably used.

  In order to introduce the reaction gas between the electrodes which are the discharge space, normal temperature and normal pressure may be used.

  The plasma method under atmospheric pressure is described in JP-A Nos. 11-61406, 11-133205, 2000-121804, 2000-147209, 2000-185362, and the like.

  In addition, the UV ozone method is a method of irradiating ultraviolet light in the presence of oxygen to advance the oxidation reaction. It is preferable to irradiate so-called vacuum ultraviolet light having a wavelength of ultraviolet light of 100 nm to 450 nm, particularly preferably about 150 nm to 300 nm. As the light source, a low-pressure mercury lamp, a deuterium lamp, a xenon excimer lamp, a metal halide lamp, an excimer laser, or the like can be used.

The output of the lamp 400W～30kW, as the illuminance ^{100mW / cm 2 ~100kW / cm 2} , more preferably 10~5000mJ / cm ² is preferably 100 to 2000 mJ / cm ² as irradiation energy.

The illuminance at the time of ultraviolet irradiation is preferably 1 mW to 10 W / cm ² .

  In the present invention, it is preferable to perform a heat treatment after the oxidation treatment or simultaneously with the oxidation treatment in addition to the oxidation treatment. Thereby, oxidative decomposition can be promoted.

  Moreover, after oxidizing the thin film containing a metal salt, it is preferable to heat the base material in the range of 50 ° C. to 200 ° C., preferably in the range of 80 ° C. to 150 ° C., and the heating time in the range of 1 minute to 10 hours. .

  The heat treatment may be performed at the same time as the oxidation, and can be rapidly converted into a metal oxide semiconductor by the oxidation.

  After the conversion to a metal oxide semiconductor, the thickness of the formed semiconductor thin film is preferably 1 to 200 nm, more preferably 5 to 100 nm.

  In the present invention, the semiconductor conversion process preferably includes a microwave (0.3 to 50 GHz) irradiation step. In addition, it is preferable to irradiate microwaves in the presence of oxygen in order to advance the oxidation reaction of the metal oxide semiconductor precursor in a short time.

(Microwave irradiation)
In the present invention, microwave irradiation is preferably used as a method for converting a thin film formed from a metal oxide semiconductor precursor into a semiconductor.

  That is, after a thin film containing a metal oxide semiconductor precursor serving as a precursor of these metal oxide semiconductors is formed, the thin film is irradiated with electromagnetic waves, particularly microwaves (frequency 0.3 GHz to 50 GHz).

  By irradiating a thin film containing a metal oxide semiconductor precursor, which is a precursor of a metal oxide semiconductor, with microwaves, electrons in the metal oxide precursor vibrate and heat is generated to make the thin film uniform from the inside. To be heated. Since substrates such as glass and resin have almost no absorption in the microwave region, the substrate itself hardly generates heat, and only the thin film portion can be selectively heated to be thermally oxidized and converted into a metal oxide semiconductor. Become.

  As is generally the case with microwave heating, microwave absorption concentrates on strongly absorbing substances and can be heated up in a very short time. Therefore, when this method is used in the present invention, the substrate itself Is hardly affected by heating by electromagnetic waves, and only the precursor thin film can be heated to a temperature at which an oxidation reaction occurs in a short time, and the metal oxide precursor can be converted into a metal oxide. Further, the heating temperature and the heating time can be controlled by the output of the microwave to be irradiated and the irradiation time, and can be adjusted according to the precursor material and the substrate material.

  In general, the microwave refers to an electromagnetic wave having a frequency of 0.3 GHz to 50 GHz, and 0.8 GHz and 1.5 GHz bands used in mobile communication, 2 GHz band, 1.2 GHz used in amateur radio, aircraft radar, and the like. The 2.4 GHz band used in bands, microwave ovens, private radio, VICS, etc., the 3 GHz band used in ship radar, etc., and 5.6 GHz used for other ETC communications are all electromagnetic waves that fall within the microwave category. Also, 28 GHz and 50 GHz transmitters are available on the market.

  Compared with a normal heating method using an oven or the like, a better metal oxide semiconductor layer can be obtained by using the heating method by electromagnetic wave (microwave) irradiation of the present invention. In producing a metal oxide semiconductor from a metal oxide semiconductor precursor material, effects other than conduction heat, for example, an effect suggesting direct action of electromagnetic waves on the metal oxide semiconductor precursor material are obtained. Although the mechanism is not fully understood, it is presumed that the conversion of the metal oxide semiconductor precursor material into a metal oxide semiconductor by hydrolysis, dehydration, decomposition, oxidation, or the like was promoted by electromagnetic waves.

  The method of performing semiconductor conversion treatment by irradiating the semiconductor precursor layer containing the metal salt with microwaves is a method of allowing the oxidation reaction to proceed selectively in a short time. Note that irradiation with microwaves in the presence of oxygen is preferable in order to advance the oxidation reaction of the metal oxide semiconductor precursor in a short time. However, heat is transferred to the base material not only by heat conduction, so in the case of a base material with low heat resistance such as a resin substrate, the precursor can be controlled by controlling the microwave output, irradiation time, and the number of times of irradiation. The treatment is preferably performed so that the surface temperature of the thin film containing the body is 100 ° C. or higher and lower than 400 ° C. The temperature of the thin film surface, the temperature of the substrate, etc. can be measured with a surface thermometer using a thermocouple or a non-contact surface thermometer.

  Further, when a strong electromagnetic wave absorber such as ITO is present in the vicinity (for example, a gate electrode), this also absorbs microwaves and generates heat, so that a region adjacent to this can be heated in a shorter time.

  The metal oxide semiconductor thin film of the present invention can be used in various semiconductor elements such as transistors and diodes, electronic circuits, etc., and a metal oxide semiconductor in a low temperature process by applying a solution of a precursor material on a substrate. The layer can be formed, and can be preferably applied to the manufacture of a semiconductor element such as a thin film transistor element (TFT element) using a resin substrate.

  The metal oxide semiconductor of the present invention can be used for a diode or a photosensor. For example, a Schottky diode or a photodiode can be produced by overlapping a metal thin film made of an electrode material described later.

(Element structure)
FIG. 1 is a diagram showing a typical element configuration of a thin film transistor element using a metal oxide semiconductor according to the present invention.

  Several structural examples of thin film transistors are shown in cross-sectional views in FIGS. In FIG. 1, a source electrode 102 and a drain electrode 103 are connected to a semiconductor layer 101 made of a metal oxide semiconductor as a channel.

  In FIG. 2A, a source electrode 102 and a drain electrode 103 are formed on a support 106, and a semiconductor layer 101 is formed between the two electrodes using the source electrode 102 and the drain electrode 103 as a base material (substrate). A field effect thin film transistor is formed by forming a gate electrode 104 thereon. FIG. 4B shows the semiconductor layer 101 formed between the electrodes in FIG. 5A so as to cover the entire surface of the electrode and the support. (C) shows a structure in which the semiconductor layer 101 is first formed on the support 106, the source electrode 102, the drain electrode 103, and the insulating layer 105 are formed, and then the gate electrode 104 is formed. In the present invention, the semiconductor layer may be formed by the method of the present invention.

  In FIG. 4D, after the gate electrode 104 is formed on the support 106, the gate insulating layer 105 is formed, the source electrode 102 and the drain electrode 103 are formed thereon, and the semiconductor layer 101 is formed between the electrodes. Form. In addition, the configuration as shown in FIGS.

  FIG. 2 is a schematic equivalent circuit diagram showing an example of a thin film transistor sheet in which a plurality of thin film transistor elements are arranged.

  The thin film transistor sheet 120 has a large number of thin film transistor elements 124 arranged in a matrix. 121 is a gate bus line of the gate electrode of each thin film transistor element 124, and 122 is a source bus line of the source electrode of each thin film transistor element 124. An output element 126 is connected to the drain electrode of each thin film transistor element 124. The output element 126 is, for example, a liquid crystal or an electrophoretic element, and constitutes a pixel in the display device. In the illustrated example, a liquid crystal is shown as an output element 126 by an equivalent circuit composed of a resistor and a capacitor. Reference numeral 125 denotes a storage capacitor, 127 denotes a vertical drive circuit, and 128 denotes a horizontal drive circuit. The present invention can be used to manufacture the source, drain electrode, gate electrode, and the like of each transistor element in the thin film transistor sheet 120, as well as the gate bus line, source bus line, and circuit wiring.

  Next, each element constituting the TFT element will be described.

(electrode)
In the present invention, the conductive material used for the electrodes such as the source electrode, the drain electrode, and the gate electrode constituting the TFT element is not particularly limited as long as it has conductivity at a practical level as an electrode. , Gold, silver, nickel, chromium, copper, iron, tin, antimony lead, tantalum, indium, palladium, tellurium, rhenium, iridium, aluminum, ruthenium, germanium, molybdenum, tungsten, tin / antimony oxide, indium / tin oxide ( ITO), fluorine-doped zinc oxide, zinc, carbon, graphite, glassy carbon, silver paste and carbon paste, lithium, beryllium, sodium, magnesium, potassium, calcium, scandium, titanium, manganese, zirconium, gallium, niobium, sodium Sodium - potassium alloy, magnesium, lithium, aluminum, magnesium / copper mixture, a magnesium / silver mixture, a magnesium / aluminum mixture, magnesium / indium mixture, aluminum / aluminum oxide mixture, a lithium / aluminum mixture, or the like is used.

  Moreover, as a conductive material, a conductive polymer, metal fine particles, or the like can be suitably used. As the dispersion containing metal fine particles, for example, a known conductive paste may be used, but a dispersion containing metal fine particles having a particle diameter of 1 nm to 50 nm, preferably 1 nm to 10 nm is preferable. In order to form an electrode from metal fine particles, the above-described method can be used in the same manner, and the metal described above can be used as the material of the metal fine particles.

(Method for forming electrodes, etc.)
As a method for forming an electrode, a method for forming an electrode using a known photolithographic method or a lift-off method, using a conductive thin film formed by a method such as vapor deposition or sputtering using the above as a raw material, or a metal foil such as aluminum or copper There is a method in which a resist is formed and etched by thermal transfer, ink jet or the like. Alternatively, a conductive polymer solution or dispersion, a dispersion containing metal fine particles, or the like may be directly patterned by an ink jet method, or may be formed from a coating film by lithography or laser ablation. Further, a method of patterning a conductive ink or conductive paste containing a conductive polymer or metal fine particles by a printing method such as relief printing, intaglio printing, planographic printing, or screen printing can also be used.

  As a method of forming an electrode such as a source, drain, or gate electrode, a gate, or a source bus line without patterning a metal thin film using a photosensitive resin such as etching or lift-off, there is a method by an electroless plating method. Are known.

  Regarding the method of forming an electrode by electroless plating, as described in Japanese Patent Application Laid-Open No. 2004-158805, a liquid containing a plating catalyst that causes electroless plating by acting with a plating agent on a portion where an electrode is provided After patterning, for example, by a printing method (including inkjet printing), a plating agent is brought into contact with a portion where an electrode is provided. If it does so, electroless plating will be performed to the said part by the contact of the said catalyst and a plating agent, and an electrode pattern will be formed.

  The application of the electroless plating catalyst and the plating agent may be reversed, and the pattern formation may be performed either. However, a method of forming a plating catalyst pattern and applying the plating agent to this is preferable.

  As the printing method, for example, screen printing, planographic printing, letterpress printing, intaglio printing, printing by ink jet printing, or the like is used.

(substrate)
Although various materials can be used for the substrate used in the present invention, 10 ≦ γh ≦ 80 (mN / m) and 2 ≦ γd ≦ 40 (with respect to two surface energy components γh and γd on the surface of the substrate. mN / m), the objective effect of the present invention can be obtained.

  Two kinds of surface energy components γh and γd will be described. Originally, the force that determines the surface energy is the two components of the dispersion force and the hydrogen bonding force. From the viewpoint that the dispersion force component of the surface energy is γd and the hydrogen bonding force component is γh, In the present invention, the static contact angle is measured using two types of solutions having known surface energies, and the hydrogen bonding force component γh and the dispersion force component γd of the surface energy are obtained from the measured values.

Specifically, water (20 ° C.) as two types of solutions having known surface energies: γh = 51.0 (mJ / m ² ), γd = 21.8 (mJ / m ² ), and methylene iodide ( 20 ° C.): Using γh = 1.3 (mJ / m ² ) and γd = 49.5 (mJ / m ² ), 20 μl was dropped on the solid surface in a measurement environment at 20 ° C., and the contact angle after 30 seconds was measured, the surface energy γh on the solid surface by the following formula (mJ ^{/ m} 2), it was determined γd (mJ / ^{m 2).}

cos θ (water contact angle) = 2√ (γd × 21.8) /72.8+2√ (γh × 51.0) /72.8-1
cos θ (contact angle of methylene iodide) = 2√ (γd × 49.5) /50.8+2√ (γh × 1.3) /50.8-1
By solving the simultaneous equations, γh and γd are obtained.

  In order to achieve the effect of the present invention, the surface energy component γh needs to be 10 or more and 80 or less, and the surface energy γd needs to be 2 or more and 40 or less. If γh is less than 10, cissing and liquid are generated when the semiconductor precursor material is applied, and a satisfactory coating cannot be obtained. If γh exceeds 80, satisfactory mobility cannot be obtained.

  If γd is less than 2, satisfactory mobility cannot be obtained, and if γd exceeds 40, a satisfactory semiconductor precursor film cannot be obtained.

  Various materials can be used as the support material constituting the substrate, for example, ceramic substrates such as glass, quartz, aluminum oxide, sapphire, silicon nitride, silicon carbide, silicon, germanium, gallium arsenide, gallium phosphide. In the present invention, the support (substrate) is preferably made of a resin, and for example, a plastic film sheet can be used. Examples of plastic films include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), polyetherimide, polyetheretherketone, polyphenylene sulfide (PPS), polyarylate, polyimide (PI), and polyamide. Examples include films made of imide (PAI), polycarbonate (PC), cellulose triacetate (TAC), cellulose acetate propionate (CAP), and the like. By using a plastic film, the weight can be reduced as compared with the case of using a glass substrate, the portability can be improved, and the resistance to impact can be improved.

  In order to obtain the target surface energy using the above-mentioned base material, surface treatment or undercoat layer coating may be performed on the substrate. As the surface treatment, plasma treatment, UV treatment, ozone treatment or the like can be used, and these can be used in combination. It is also possible to match the surface energy by corona discharge.

  The undercoat layer is not particularly limited, but silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, lead zirconate titanate, lead lanthanum titanate, Inorganic layers such as strontium titanate, barium titanate, barium magnesium fluoride, bismuth titanate, strontium bismuth titanate, strontium bismuth tantalate, bismuth tantalate niobate, trioxide yttrium, or polyimide, polyamide, polyester, polyacrylate , Photo-curing resin of photo radical polymerization system, photo cation polymerization system, or copolymer containing acrylonitrile component, organic such as polyvinyl phenol, polyvinyl alcohol, novolac resin , And it can be used in combination or laminated thereof. The thickness of these undercoat layers is 2 nm to 3 μm, preferably 5 nm to 1 μm.

(Gate insulation layer)
Although various insulating films can be used as the gate insulating layer of the thin film transistor of the present invention, an inorganic oxide film having a high relative dielectric constant is particularly preferable. Inorganic oxides include silicon oxide, aluminum oxide, tantalum oxide, titanium oxide, tin oxide, vanadium oxide, barium strontium titanate, barium zirconate titanate, lead zirconate titanate, lead lanthanum titanate, strontium titanate, Examples thereof include barium titanate, barium magnesium fluoride, bismuth titanate, strontium bismuth titanate, strontium bismuth tantalate, bismuth tantalate niobate, and yttrium trioxide. Of these, silicon oxide, aluminum oxide, tantalum oxide, and titanium oxide are preferable. Inorganic nitrides such as silicon nitride and aluminum nitride can also be suitably used.

  Examples of the method for forming the film include a vacuum process, a molecular beam epitaxial growth method, an ion cluster beam method, a low energy ion beam method, an ion plating method, a CVD method, a sputtering method, an atmospheric pressure plasma method, and a spray process. Examples include wet processes such as coating methods, spin coating methods, blade coating methods, dip coating methods, casting methods, roll coating methods, bar coating methods, die coating methods, and other methods such as printing and ink jet patterning. Can be used depending on the material.

  The wet process is a method of applying and drying a liquid in which fine particles of inorganic oxide are dispersed in an arbitrary organic solvent or water using a dispersion aid such as a surfactant as required, or an oxide precursor, for example, A so-called sol-gel method in which a solution of an alkoxide body is applied and dried is used.

  Of these, the atmospheric pressure plasma method described above is preferable.

  It is also preferable that the gate insulating layer (film) is composed of an anodized film or the anodized film and an insulating film. The anodized film is preferably sealed. The anodized film is formed by anodizing a metal that can be anodized by a known method.

  Examples of the metal that can be anodized include aluminum and tantalum, and the anodizing method is not particularly limited, and a known method can be used.

  Examples of organic compound films include polyimides, polyamides, polyesters, polyacrylates, photo-radical polymerization-type, photo-cation polymerization-type photo-curing resins, copolymers containing acrylonitrile components, polyvinyl phenol, polyvinyl alcohol, novolac resins, etc. Can also be used.

  An inorganic oxide film and an organic oxide film can be laminated and used together. The thickness of these insulating films is generally 50 nm to 3 μm, preferably 100 nm to 1 μm.

  Hereinafter, although the manufacturing method of the thin-film transistor using the oxide semiconductor thin film which concerns on this invention is demonstrated concretely, this invention is not limited to this.

Example 1
(Fabrication of thin film transistors on a quartz substrate)
Each step of manufacturing a thin film transistor in a preferred embodiment of the present invention will be described with reference to a schematic cross-sectional view of FIG.

A quartz glass substrate (500 μm) was used as the support 301, and first, a corona discharge treatment was performed thereon under the condition of 50 W / m ² / min. Thereafter, an undercoat layer was formed in order to improve adhesion as follows.

(Formation of undercoat layer)
A coating solution having the following composition was applied to a dry film thickness of 2 μm, dried at 90 ° C. for 5 minutes, and then cured for 4 seconds from a distance of 10 cm under a 60 W / cm high-pressure mercury lamp.

Dipentaerythritol hexaacrylate monomer 60g
Dipentaerythritol hexaacrylate dimer 20g
Dipentaerythritol hexaacrylate trimer or higher component 20g
Diethoxybenzophenone UV initiator 2g
Silicone surfactant 1g
75g of methyl ethyl ketone
Methyl propylene glycol 75g
Further, a silicon oxide film having a thickness of 50 nm was formed on the layer by continuous atmospheric pressure plasma treatment under the following conditions, and these layers were used as an undercoat layer (barrier layer) 310 (FIG. 3A). In addition, the atmospheric pressure plasma processing apparatus used the apparatus according to FIG. 6 as described in Unexamined-Japanese-Patent No. 2003-303520.

(Used gas)
Inert gas: helium 98.25% by volume
Reactive gas: oxygen gas 1.5 volume%
Reactive gas: Tetraethoxysilane vapor (bubbled with helium gas) 0.25% by volume
(Discharge conditions)
Discharge output: 10 W / cm ²
(Electrode condition)
The electrode is coated with 1 mm of alumina by ceramic spraying on a stainless steel jacket roll base material having cooling means with cooling water, and then a solution obtained by diluting tetramethoxysilane with ethyl acetate is applied and dried, and then sealed by ultraviolet irradiation. This is a roll electrode having a dielectric (relative permittivity of 10) that has been subjected to hole treatment and has a smooth surface and an Rmax of 5 μm, and is grounded. On the other hand, as the application electrode, a hollow rectangular stainless steel pipe was coated with the same dielectric as described above under the same conditions.

(Formation of thin film transistor layers)
Next, a gate electrode is formed. An ITO film having a thickness of 300 nm was formed on one surface by sputtering, and then etched by photolithography to form a gate electrode 302 (FIG. 3 (1)).

  Next, at a film temperature of 200 ° C., a silicon oxide film having a thickness of 180 nm was provided by the atmospheric pressure plasma method described above to form a gate insulating layer 303 (FIG. 3B).

Next, the substrate was immersed in a toluene solution (0.1% by mass, 60 ° C.) in which octyltrichlorosilane (C ₈ H ₁₇ SiCl ₃ ) (OTS) was dissolved, rinsed with toluene, and further an ultrasonic cleaner. After the treatment for 10 minutes, the entire surface of the gate insulating film reacted with OTS to be surface-treated by drying. A monomolecular film made of octyltrichlorosilane is formed by the surface treatment, but this monomolecular film is represented by the surface treatment layer 308 for convenience (FIG. 3 (3)).

  The surface-treated gate insulating layer 303 was irradiated with ultraviolet light having a wavelength of 254 nm from a low-pressure mercury lamp through a photomask M having a light transmission portion corresponding to the semiconductor channel region (FIG. 3 (4)). . Different samples were produced by changing the temperature of the substrate to 0, 50, 100, 150, and 200 ° C. during ultraviolet irradiation. Thereby, the surface of the exposure part was decomposed | disassembled and the surface treatment part was hydrophilized. The decomposition product was removed by washing with ethanol, and the surface of the gate insulating layer 303 corresponding to the channel region was exposed (FIG. 3 (5)). The degree of hydrophilization varied depending on the temperature change of the substrate, and the surface energy values shown in Table 1 were obtained. For the surface energy value, a contact angle meter CA-V manufactured by Kyowa Interface Science Co., Ltd. was used, and 20 μl was dropped on the solid surface in an environment of 20 ° C. and 50% Rh, and the contact angle after 30 seconds was measured. As the droplet, water and methylene iodide were used, and the γh component and γd component were calculated.

  Next, indium nitrate and gallium nitrate are mixed so as to have a metal ratio of 1: 0.5 (molar ratio), and a 10% by weight aqueous solution (containing 10% by weight ethanol in a solvent) is used as an ink. Ink jet was used to eject ink according to the semiconductor layer pattern (substantially gate electrode pattern) to form a semiconductor precursor material coating film 306 '(FIG. 3 (6)).

  The average film thickness of the precursor material thin film formed by heat treatment at 100 ° C. and drying was 20 nm.

  Furthermore, microwave irradiation was performed from the support side. That is, the treatment was performed at 200 ° C. for 20 minutes by irradiating with microwaves (2.45 GHz) at an output of 500 W under an atmospheric pressure condition where the partial pressure of oxygen and nitrogen was 1: 1. The precursor material was converted into an oxide semiconductor by heat generation due to microwave absorption of ITO (gate electrode 302), and an oxide semiconductor layer 306 was formed on the gate insulating film opposite to the gate electrode (FIG. 3 (7)). ). The surface temperature was measured with a surface thermometer using a thermocouple.

Further, the substrate was immersed for 10 minutes in a toluene solution (0.1 mass%, 60 ° C.) in which octyltrichlorosilane (C ₈ H ₁₇ SiCl ₃ ) (OTS) was dissolved, and then rinsed with toluene. The surface of the formed oxide semiconductor layer 306 also reacted with OTS to form a monomolecular film and was surface treated by drying after treatment for 10 minutes. Similarly, this monomolecular film was represented by the surface treatment layer 308 (FIG. 3 (8)).

  Next, the protective film formation region was irradiated with ultraviolet light of 254 nm using a mask covering the region other than the protective film formation region on the semiconductor layer (FIG. 3 (9)). The surface treatment layer 308 in the protective film formation region on the semiconductor layer was decomposed to expose the semiconductor layer. Since the width of the protective film forms the channel length (distance between the source electrode 304 and the drain electrode 305), the exposure region is adjusted so that the width of the protective film is 15 μm, and only the channel region of the semiconductor layer is exposed (FIG. 3 (10)).

  Next, a perhydropolysilazane (Aquamica NP110 (registered trademark) xylene solution manufactured by AZ Electronic Materials Co.) xylene solution is formed on the oxide semiconductor layer 306 in a predetermined region in the oxide semiconductor layer using a piezo ink jet apparatus similar to the above. (Fig. 3 (11)). Next, this is irradiated with microwaves in the range of 150 ° C. to 500 ° C., here, the heat treatment of the gate electrode is performed at 200 ° C. for about 20 minutes to convert it into a thin film layer of silicon dioxide, and the protective layer 307 was formed (FIG. 3 (12)). The thickness of the protective layer was 200 nm.

  Next, the remaining surface treatment layer 308 was decomposed by oxygen plasma treatment under the following conditions using the same atmospheric pressure plasma apparatus as described above, and part of the surfaces of the gate insulating layer 303 and the oxide semiconductor layer 306 was exposed. (FIG. 3 (13)).

(Used gas)
Inert gas: Nitrogen gas 98% by volume
Reactive gas: 2% by volume of oxygen gas
(Discharge conditions)
High frequency power supply: 13.56 MHz
Discharge output: 10 W / cm ²
Next, a silver fine particle dispersion (CCI-300 manufactured by Cabot (silver content 20 mass%)) is ejected from a piezo-type inkjet head, and printing is performed on the source electrode and drain electrode portions including the exposed regions of the semiconductor layer. gave. Next, heat treatment was performed at 200 ° C. for 30 minutes to form the source electrode 304 and the drain electrode 305 (FIG. 3 (14)). Each size was 40 μm wide, 100 μm long (channel width), and 100 nm thick, and the distance (channel length) between the source electrode 304 and the drain electrode 305 was 20 μm.

  By the above method, six kinds of thin film transistors 01 to 06 having different surface energy on the substrate surface when the oxide semiconductor precursor film was applied were manufactured.

With respect to the thin film transistor manufactured above, the drain bias is set to 10 V, the increase in drain current (transfer characteristic) is observed when the gate bias is swept from −30 V to +30 V, and the mobility (cm ² / Vs) is observed from the saturation region. Estimated. Further, the gate voltage Vg (ON) at the rise of the drain current and the common logarithm value (on / off ratio) of the ratio between the maximum value and the minimum value of the drain current were evaluated, and the results are shown in Table 1.

  As shown in Table 1, when the surface energy components γh and γd are set in the region of the present invention, the mobility of the thin film transistor is high, driving well, and n-type enhancement operation is shown. However, when γh and γd are out of the range, the mobility is low and satisfactory transistor performance cannot be obtained.

  As described above, it can be seen that when the surface energy components γh and γd are within the range of the present invention, a semiconductor layer having high mobility is formed.

Example 2
(Production of thin film transistor on polyimide substrate)
In Example 1, except that the substrate was changed from quartz to a polyimide substrate, and indium nitrate, gallium nitrate, and zinc nitrate were changed to 1: 1: 1 as the precursor solution in a metal ratio of 1: 1: 1, the thin film transistors 07- Table 2 shows the results of fabricating transistor No. 12 and evaluating the transistor performance in the same manner.

  As shown in Table 2, it was found that the effect of the present invention was obtained on a polyimide substrate as well, and that the thin film transistor was driven well.

DESCRIPTION OF SYMBOLS 10 Thin-film transistor sheet 11 Gate bus line 12 Source bus line 14 Thin-film transistor element 15 Storage capacitor 16 Output element 17 Vertical drive circuit 18 Horizontal drive circuit 101 Semiconductor layer 102 Source electrode 103 Drain electrode 104 Gate electrode 105 Gate insulating layer 106 Support body 306 'Metal Oxide semiconductor precursor material coating film 301 Support 302 Gate electrode 303 Gate insulating layer 304 Source electrode 305 Drain electrode 306 Metal oxide semiconductor layer

Claims (11)

  Metal oxide semiconductor manufacturing method for forming metal oxide semiconductor by converting metal oxide semiconductor precursor film obtained by applying metal oxide semiconductor precursor solution or dispersion onto substrate The two surface energy components γh and γd on the substrate surface when the metal oxide semiconductor precursor is applied are 10 ≦ γh ≦ 80 (mN / m) and 2 ≦ γd ≦ 40 (mN / m). A method for producing a metal oxide semiconductor.   The method for producing a metal oxide semiconductor according to claim 1, wherein the metal oxide semiconductor precursor film is formed by applying an aqueous solution of a metal oxide semiconductor precursor.   The method for producing a metal oxide semiconductor according to claim 1, wherein the metal oxide semiconductor is an amorphous metal oxide.   The method for producing a metal oxide semiconductor according to claim 1, wherein the metal oxide semiconductor contains any element of In, Zn, and Sn.   The method for producing a metal oxide semiconductor according to any one of claims 1 to 4, wherein the metal oxide semiconductor contains Ga or Al.   The method for producing a metal oxide semiconductor according to claim 4, wherein the metal oxide semiconductor contains only In and Ga as metal elements.   The method for producing a metal oxide semiconductor according to claim 1, wherein the substrate is a plastic base material.   The said conversion is performed at 100-250 degreeC, The manufacturing method of the metal oxide semiconductor of any one of Claims 1-7 characterized by the above-mentioned.   The method for producing a metal oxide semiconductor according to claim 1, wherein the conversion to the metal oxide semiconductor is performed by microwave heating.   A metal oxide semiconductor manufactured by the method for manufacturing a metal oxide semiconductor according to claim 1.   A thin film transistor using a metal oxide semiconductor manufactured by the method for manufacturing a metal oxide semiconductor according to claim 1.

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