JP5575352B2 - Surface texturing method - Google Patents

Description

  The present invention relates generally to the use of a beam of electromagnetic radiation to alter the surface of a material. More particularly, the present invention relates to the use of an electron beam to alter the surface of a component used in a process chamber to obtain a textured surface on the chamber component.

  As integrated circuit dimensions are manufactured with reduced dimensions, the production yield of these devices becomes more susceptible to contamination. Therefore, manufacturing integrated circuit devices, especially integrated circuit devices with a small physical size, requires a higher degree of contamination control than previously considered necessary.

  Contamination of integrated circuit devices can be caused by sources such as thin film deposition, etching, or other unwanted stray particles during semiconductor manufacturing processes. Generally, the manufacture of integrated circuit devices involves the use of chambers such as physical vapor deposition (PVD) and sputtering chambers, chemical vapor deposition (CVD) chambers, plasma etching chambers, and the like. During the deposition and etching process, material condenses from the gas phase onto various internal surfaces within the chamber to form solid masses that remain on these surfaces of the chamber. This condensed foreign matter accumulates on the interior surface of the chamber and becomes separated or stripped from the interior surface during or during the wafer processing sequence. This separated foreign matter strikes and contaminates the wafer substrate and the device above it. Contaminated devices often must be discarded, thus reducing the production yield of the process.

  In order to prevent separation of foreign matter condensed on the inner surface of the process chamber, the adhesion between the foreign matter condensed on the inner surface and the surface is made stronger and difficult to separate, and the degree of contamination of the wafer substrate is reduced. The internal surface can be textured. The currently used method for texturing the chamber surface is “bead blasting”. Bead spraying involves spraying hard particles onto the surface to roughen the surface. Alternatively, the surface can be textured by applying a coating to the surface, such as an aluminum coating deposited by aluminum arc spray. However, these and other methods that are widely used to modify the surface within the process chamber are sometimes not effective in obtaining sufficient adhesion between the condensed mass and the chamber surface.

  In order to avoid the problems associated with separated foreign matter, frequent and sometimes long cleaning steps are required to remove the condensed mass from the chamber surface. Further, even if a considerable amount of cleaning is performed, in some cases, contamination by separated foreign matter may occur.

  Accordingly, there is a desire to reduce contamination due to foreign matter condensed on the internal surface of the process chamber and to develop a method for improving the adherence of condensed foreign matter on the internal surface of the process chamber.

  The present invention generally provides a method of texturing the surface of a workpiece. The method includes supplying a workpiece to a texturing chamber and scanning a beam of electromagnetic energy across the surface of the workpiece to form a plurality of features on the surface. The feature to be formed is selected from the group consisting of indentations, protrusions, and combinations thereof.

  The present invention generally provides a method of texturing the surface of a workpiece. The method includes supplying a workpiece to a texturing chamber and scanning an electron beam across the surface of the workpiece to form a plurality of features on the surface. The feature to be formed is selected from the group consisting of indentations, protrusions, and combinations thereof.

  Furthermore, a method is provided for reducing contamination in the process chamber. The method includes scanning a beam of electromagnetic energy across the surface of one or more process chamber components to form a plurality of features on the surface. The feature to be formed is selected from the group consisting of indentations, protrusions, and combinations thereof. The method further includes positioning one or more process chamber components within the process chamber and initiating a process sequence within the process chamber.

  The above features, advantages and objectives of the present invention will become apparent from the following detailed description of specific embodiments of the present invention based on the accompanying drawings.

  FIG. 1 is a schematic cross-sectional view of a surface texturing device 100 that can be used to change the surface of a workpiece 104. The surface texturing apparatus 100 generally includes a column 120. A bias cup 116 is disposed inside the column 120 so as to surround the cathode 106. The cathode 106 can be a filament made of a material such as tungsten. A high voltage cable 122 is coupled to the cathode 106, and the cable 122 connects the high voltage power source to the cathode 106 and the anode 108.

  An anode 108 and two pairs of high-speed deflection coils 112A and 112B are located apart from the cathode 106 downward. A hole 118 is formed in the anode 108 to form a passage. A high speed focusing coil 110, typically circular and concentric with the column 120, is disposed below the anode 108. The two pairs of high-speed deflection coils 112 </ b> A and 112 </ b> B exist below the high-speed focusing coil 110. Coupled to the column 120 and located below the column 120 is a working chamber 114 having a top surface 114T. The working chamber 114 generally includes a substrate support 140. The substrate support 140 can be coupled to an actuating means 142 for moving the substrate support 140. The actuating means 142 can be, for example, an actuator or rotating shaft that can translate the workpiece 104 or rotate the workpiece 104 along one or more axes of rotation. Actuating means 142 moves workpiece 104 relative to electromagnetic beam 102. The electromagnetic beam can be, for example, an electron beam. The substrate support 140 can further include a heating element 150, such as a resistance heater or a thermoelectric device. A separation valve 128 positioned between the anode 108 and the high speed focusing coil 110 divides the column 120 so that the working chamber 114 can be maintained at a different pressure than the portion of the column 120 above the separation valve 128. To.

  A pump 124 such as a diffusion pump or a turbomolecular pump is coupled to the column 120 via a valve 126. Pump 124 is used to evacuate column 120. Typically, a vacuum pump 130 is coupled to the chamber 114 via the isolation valve 132 and evacuates the chamber 114. Examples of electromagnetic beams that can be used or modified in the process of the present invention include electron beam welding systems manufactured by Precision Technologies, Enfield, Connecticut, or Cambridge Vacuum Engineering, Water Beach, Cubs, UK. Including.

  FIG. 1 specifically shows a surface texturing device that uses an electron beam, but for example, any electromagnetic wave or particle such as a beam of protons, neutrons, X-rays, lasers, electric arcs, etc. It should be understood that the use of a beam is within the scope of the present invention. The term electromagnetic beam is also used, but is not limited to charged particle beams, such as electron beams, protons or neutrons, X-rays, high density light radiation (eg, lasers), or electric arc type processes (eg, It is understood to include any form of focused energy that is transferred to the workpiece, such as a beam of an electrical discharge machine (EDM). Surface texturing devices generally include means for controlling and focusing a beam of specific energy onto the surface of a workpiece. This particular means of controlling and focusing the beam depends on the particular type of electromagnetic radiation used.

Various methods for texturing the surface of the surface texturing process workpiece 104 are shown in FIGS. 3A, 3B, 3C, 3D, 3E, and 3F. Specifically, FIG. 3A shows a series of process steps 300 starting at step 301 and subsequent to step 304 where the workpiece 104 is delivered to a surface texturing chamber such as chamber 114 of FIG. FIG. 3B shows the same process 300 as FIG. 3A, but with the added step 307 of preheating the workpiece 104 before performing the texturing process. FIG. 3C shows the same series of process steps 300 as in FIG. 3A, but step 302 of releasing stress from the workpiece 104 before step 304 and preheating the workpiece 104 before performing the texturing process. 307 is added. FIG. 3D shows the same series of process steps 300 as FIG. 3A, but with step 302 being added to relieve stress from the workpiece 104 prior to step 304. The preheating and stress relief steps can be performed in a chamber separate from the texturing process or in the same chamber. FIG. 3E shows the same series of process steps 300 as FIG. 3A, but releases the stress from the workpiece 104 after the texturing process in step 310 is completed and occurs during the texturing process or of the texturing process. A step 311 is added to escape any remaining stress. In other embodiments of the present invention, step 311 is also added to the other process step 300 shown in FIGS. 3B, 3C, 3D, and 3F to induce residual stresses in the workpiece by application of the texturing process. Or the stress remaining in the workpiece can be removed. FIG. 3F shows the same series of process steps 300 as FIG. 3A, but adds step 312 to chemically clean the workpiece after step 310 is completed, reducing the impact of contamination on subsequent processes. Or preventing the second material from adhering to the workpiece. In other embodiments of the present invention, step 312 is also added to other process step 300 shown in FIGS. 3B, 3C, 3D, and 3E to prevent contamination of subsequent processes that would use the workpiece. The effect can be reduced or prevented and the adhesion of the second material to the workpiece can be improved.

The workpiece generally comprises a material such as a metal or metal alloy, a ceramic material, a polymer material, a composite material, or a combination thereof. In one embodiment, the workpiece is steel, stainless steel, tantalum, tungsten, titanium, copper, aluminum, nickel, aluminum oxide, aluminum nitride, silicon oxide, silicon carbide, sapphire (Al ₂ O ₃ ), and their A material selected from the group consisting of combinations. In one embodiment, the workpiece is austenitic stainless steel, iron-nickel-chromium alloy (eg, Inconel (registered trademark) alloy), nickel-chromium-molybdenum-tungsten alloy (eg, Hastelloy (registered trademark)). , Copper / zinc alloy, chromium / copper alloy (for example, 5% or 10% Cr, the remainder is Cu), and the like. In another embodiment, the workpiece is made of quartz. The workpiece can also be made of a polymer such as polyimide (Vespel®), polyetheretherketone, polyallylate (Ardel®), and the like.

In step 306, chamber 114 and column 120 are evacuated to a pressure in the range of about 1 × 10 ^{−3 to} 1 × 10 ⁻⁵ Torr. In one embodiment, the electromagnetic beam is formed by heating the cathode 106 using a resistance heater (not shown) and applying a current to the cathode using a power source (not shown). . Electrons escaped from the cathode are collected in the bias cup 116. A high negative voltage potential (hereinafter referred to as an acceleration voltage) with respect to the anode is applied to the cathode 106 via the cable 122, and a second negative potential having a magnitude smaller than the acceleration voltage is applied to the bias cup 116. The acceleration voltage can be in the range of about 50 to about 160 kV. The second potential is used to control the amount of electron beam energy delivered to the workpiece 104.

  The electrons move through the holes 118 in the anode 108 and begin to diverge. A high speed focusing coil 110 located under the anode 108 focuses the electron beam to a small diameter on the workpiece 104, while high speed deflection coils 112A, 112B magnetically deflect the beam to a specific location on the surface of the workpiece 104. Let In order to generate a magnetic flux sufficient to manipulate the electromagnetic beam 102, a current is applied to the high speed focusing coil 110 and the high speed deflection coils 112A, 112B. The electron beam that has passed through the high-speed focusing coil 110 and the high-speed deflection coils 112A and 112B is supplied to the surface of the workpiece as shown in Step 308 of FIG. The distance between the top surface 114T of the chamber 114 and the workpiece 104 is the working distance of the beam. This working distance in one embodiment is about 50 mm to about 1,000 mm, preferably about 200 mm to about 350 mm.

  Please refer to FIG. The microprocessor controller 200 is preferably coupled to the focusing coil 110 and the high speed deflection coils 112A, 112B. Microprocessor controller 200 can be in the form of any general purpose computer processor (CPU) that can be used in industrial settings for various chambers and sub-processors. The computer uses any suitable memory, such as random access memory, read only memory, floppy disk drive, hard disk, or some other form of local or remote digital storage. can do. Various support circuits can be coupled to the CPU to assist the processor as is well known. Software routines can be stored in memory as needed or executed by a second CPU that is remotely located.

  The software routine is executed when the workpiece 104 is positioned in the chamber 114. When the software routine is executed, the general purpose computer is converted to a specific process computer that controls the chamber operation to perform the chamber process. Alternatively, the process of the present invention can be performed by hardware as an application specific integrated circuit or other type of hardware device, or by a combination of software and hardware.

  Still referring to FIG. A set of instructions is typically encoded on a computer readable medium and provided to the controller 200. The control signal generated by the execution of the command is transmitted from the controller 200 to the high-speed focusing coil 110 and the high-speed deflection coils 112A and 112B through one or more function generators 204. In one embodiment, instructions are conveyed through five function generators 204. One of the five function generators is used for fast focusing. Two function generators are used for the main deflection of the beam and two function generators are used for the secondary deflection of the beam. The function generator is provided with a corresponding power amplifier (not shown). The instructions typically allow the fast focusing coil 110 and the fast deflection coils 112A, 112B to manipulate the electromagnetic beam 102 and move the beam to a specific location on the surface of the workpiece 104 by moving the beam to a specific position. Create a particular pattern, spacing, and characteristics of features on the surface.

  The function generator 204 can generate signal waveforms over various frequencies. Thereby, the position and focus diameter of the electron beam 102 can be quickly adjusted according to the signal emitted by the controller 200, and the feature can be quickly formed on the surface of the workpiece. The function generator 204 is preferably one or more power amplifiers, power supplies, etc. (not shown) to facilitate transmission of signals between the controller 200 and the focusing coil 110 and the high speed deflection coils 112A, 112B. Is bound to.

  As shown in step 310 of FIG. 3, the electromagnetic beam 102 is scanned across the surface of the workpiece 104. Prior to scanning the beam across the surface of the workpiece 104, the workpiece 104 can be heated to a preheat temperature. The preheating temperature generally depends on the material constituting the workpiece 104. For example, the workpiece 104 can be heated to a preheat temperature that is lower than the temperature at which the workpiece 104 begins to melt, change the physical state, or cause substantial degradation. The workpiece 104 can be heated using, for example, the heating element 150 shown in FIG. The workpiece 104 can also be heated by scanning the component with an electron beam before texturing the workpiece 104. This pre-scanning step can be accomplished by rapidly moving the electron beam across the surface in a pattern that heats the area to be textured. In one embodiment, the electron beam or other energy source process parameters (eg, focal length and process power) are varied during the workpiece preheating process. The process parameters used during the preheating process will depend on the desired preheating temperature, the speed of the beam moving across the surface of the workpiece, and / or the workpiece material that is preheated before texturing.

  In one embodiment, the process of preheating the workpiece prior to performing the texturing process can be accomplished by using an energy source 181 attached near the workpiece 104 in the chamber 114. Examples of typical energy sources include, but are not limited to, radiant heat lamps, induction heaters, or infrared resistance heaters known in the art. In this configuration, the energy source 181 is turned on and maintained for a specified time or until the workpiece reaches the desired temperature before the texturing process begins (step 307). In another embodiment, the workpiece 104 can be preheated outside the chamber 114 (completed prior to step 304) and transferred to the chamber just prior to performing the texturing process.

  The stress relief process can also be performed prior to the preheating and texturing process to prevent distortion of the workpiece 104 due to relaxation of residual stresses created in the workpiece by other prior manufacturing processes. Residual stress can be generated by various pre-manufacturing operations such as grit blasting and various material forming processes (eg, milling, drawing, sintering, molding, etc.). Stress relief methods or processes are well known in the field of component assembly and / or manufacturing, and the processing strategy will depend on the type of material, the amount and type of forming process used, and tolerances to workpiece distortion.

  Please refer to FIG. Beam 102 travels through focusing coil 110 and high speed deflection coils 112A, 112B. Depending on the nature of the signal sent from controller 200 through function generator 204, beam 102 is scanned across a particular portion of the surface of workpiece 104. As a result, a plurality of features 500 are formed on the surface of the workpiece 104. The feature 500 can be a specific geometric pattern. In one embodiment, the workpiece 104 is moved relative to the impinging electromagnetic beam 102 during the texturing process. The workpiece 104 can be moved with respect to the electromagnetic beam 102 at a traveling speed in the range of, for example, about 1 m / min to about 1.7 m / min. In one embodiment, the workpiece is rotated about one or more rotational axes during irradiation of the electromagnetic beam 102. The axis of rotation can be, for example, perpendicular or parallel to the incident beam. Depending on the size or shape of the workpiece, it may not be possible to physically move or rotate the workpiece, in which case the electromagnetic beam 102 may be moved across the workpiece 104 to form the desired texture. it can.

Generally speaking, current flows to the workpiece 104 when the electromagnetic beam 102 is generated by an electron beam, an ion beam, or an electric arc. If the electromagnetic beam 102 is an electron beam, the current can be in the range of about 15 to about 50 milliamps (mA), preferably 15 to 40 mA. The energy delivered by the electromagnetic beam 102 is defined as the power density, which is the average power delivered across a particular cross-sectional area on the surface of the workpiece. In one embodiment, the average power density of the electromagnetic beam 102 is, for example, within a range of about 10 ⁴ W / mm ^{2 to} about 10 ⁵ W / mm ² at some point on the surface of the workpiece from which the beam is directed. Can be. The peak power density of the electromagnetic electromagnetic beam 102 can be, for example, in the range of about 10 ⁵ W / mm ^{2 to} about 10 ⁷ W / mm ² at some point on the surface of the workpiece from which the beam is directed. The peak power density can be defined as the process setting when the beam is at its maximum focus (ie the smallest possible spot size) at a given power setting. The amount of energy required to form the feature 500 on the surface of the workpiece varies with the type of energy source (eg, electron beam, laser, etc.) due to the absorption efficiency or energy transfer efficiency of the workpiece. Note that you get.

  The power or energy delivered to the workpiece surface by the electromagnetic beam is not intended to severely or severely distort the workpiece (eg, melting, warping, cracking, etc.). Severe or severe distortion of a workpiece generally refers to a condition in which the workpiece has become unusable for its intended purpose as a result of performing the texturing process. The amount of energy required to cause significant distortion to the workpiece is the material that the workpiece is made of, the thickness and / or mass of the workpiece near the textured area, the shape of the workpiece (eg, flat , Cylindrical, etc.), the amount of residual stress in the workpiece, the actual power delivered to the workpiece, the density of the textured features (feature 500) on the workpiece surface, and / or on the workpiece Depend on the beam dwell time at any point. In one embodiment, the following steps can be performed to prevent significant distortion in one or more thin workpieces that are sensitive to thermal stresses induced by the texturing process. That is, the beam movement (or beam transfer) speed can be increased to reduce the energy delivered to the workpiece (so that it is not used to form the feature 500 on the workpiece surface). The beam can be defocused during the travel time, or the beam power can be reduced during the travel time. In order to reduce strain in workpieces that are susceptible to distortion (eg, geometrically flat materials with high thermal expansion), in one embodiment induced by a texturing process on one side of the workpiece In order to compensate for the applied stress, a texturing process is required to perform texturing on both sides of the workpiece.

  In another embodiment, the heating element 150 in the substrate support 140 cools the workpiece 104 during the texturing process to reduce the maximum temperature reached during the texturing process, and / or Alternatively, the cooling rate after texturing can be controlled to prevent or reduce distortion in the workpiece. The heating element 150 in this embodiment can be made of a thermoelectric device such as that sold by TE Technology, Inc. of Traverse City, Michigan, or Ferrotec America Corporation of Nashua, NH. In another embodiment, the workpiece can be clamped to the substrate support 140 to constrain the deflection of the workpiece and prevent distortion of the workpiece during texturing.

  Generally speaking, the beam has a spatial distribution of energy that varies depending on the composition of the workpiece. The beam generally has a spatial distribution of energy that varies around a center value, which can be, for example, a Gaussian distribution. In other embodiments, the beam can have a non-Gaussian distribution. For example, the beam can have a spatial distribution of energy across the beam diameter, which is substantially more uniform across the beam diameter than a Gaussian distribution. In one embodiment useful for austenitic steels, approximately 90% to about 98%, preferably about 98% of the beam energy is contained within a beam diameter of about 0.4 mm and the remaining energy is about It is outside the diameter of 0.4 mm, but is generally within 1 mm in diameter.

  In one embodiment, the beam is scanned across the surface of the workpiece using high speed deflection coils 112A, 112B, but no focusing coil. In this embodiment, the beam continues to be focused during the texturing process. FIG. 5A is a top view showing an overview of the surface of the textured workpiece 104. The beam undergoes main deflection by using high speed deflection coils 112A, 112B. The high-speed deflection coils 112A and 112B move the beam in the vicinity of various reference points R. The main deflection frequency can be in the range of about 23 to about 32 Hz. After being moved to the vicinity of the reference point R, the beam undergoes a plurality of secondary deflections. With each secondary deflection, the beam is moved to, for example, a sub-reference point indicated by R ′ in FIG. 5A. The beam subjected to a specific secondary deflection interacts with the surface of the workpiece 104 to form a feature thereon. The secondary deflection frequency can be in the range of about 400 Hz to about 10 kHz. In one embodiment, the secondary deflection frequency is in the range of about 2 kHz to about 4 kHz.

  The secondary deflections can be spatially arranged such that the features 500 form a pattern 520 around the reference point R. The pattern 520 shown in FIG. 5A is a linear pattern. Of course, many other patterns are possible, including circles, ellipses, triangles, stars, circles with a central spot. The number of secondary deflections around each reference point R is variable, for example, up to about 100.

In one embodiment, the features 500 are arranged in a hexagonal close-packed (HCP) pattern, as shown in FIG. 5C, by six closely arranged features 500 (shown as A2 to A7). It can be defined as one enclosed feature 500 (shown as A1). The HCP pattern can be repeated to form an array of features across the surface of the workpiece. Using a hexagonal close-packed pattern maximizes the density of features 500 on the surface and is deposited on the surface of the workpiece 104 when using a textured workpiece 104 during a subsequent deposition process (described below). The adhesion of the material is improved. Texture density is defined and measured as the number of features 500 within a 1 cm ² surface area on the workpiece 104. The texture density can vary depending on the workpiece material, the type of material deposited in the subsequent process, the angle of incidence of the electromagnetic beam, and the size and spacing of the various features 500, but generally ranges from about 1 to 300 features / cm ² , preferably from about 20 to about 260 features / cm ² . For example, a titanium product (part number 0020-46649) used in the PVD deposition process for tantalum manufactured by Applied Materials, Inc., Santa Clara, Calif., Has about 200 to about 260 features / cm over the entire textured surface. ² can be included. As yet another example, an aluminum product (part number 0020-44438) manufactured by Applied Materials, used in PVD deposition processes of tantalum or tantalum nitride, has about 30 to about 50 features across the textured surface. / Cm ² can be included.

  FIG. 5B is an enlarged top view of the surface of the textured workpiece 104. The electromagnetic beam 102 has a beam diameter 504. The beam diameter 504 at the point where the electromagnetic beam 102 contacts the surface of the workpiece 104 is about 0.4 mm to about 1 mm, preferably about 0.4 mm. The beam is focused on area 502 on the surface of workpiece 104 and continues to focus on area 502 for a time known as rest time. During the downtime, the beam interacts with a region 502 on the surface of the workpiece 104 to form a feature thereon.

  As shown in FIG. 5B, the feature formed in this manner can have a diameter 506 that is substantially the same as the size of the beam diameter 504 at the point where the electromagnetic beam 102 contacts the surface of the workpiece 104.

  Generally speaking, the beam dwell time can be in the range of about 0.1 milliseconds (ms) to about 2 ms. The transit time that elapses between each secondary deflection can be about 1 microsecond (μs) to 50 μs. Inventors use such short travel times for austenitic steels to avoid having to defocus the beam or reduce power while moving from one feature to the next. I found. The surface exposed to the beam only during the beam travel time does not melt appreciably, so the feature is formed only in the region where the beam rests. As the dwell time elapses, the electromagnetic beam 102 is deflected to another area, such as area 510, on the surface of the workpiece 104. In one embodiment, the pause time is shorter than 1 ms (eg, about 1 ms) to prevent the workpiece from being distorted due to the geometrically thin or brittle region of the workpiece where the feature 500 is placed. And / or travel time can be shortened to less than 1 μs.

  In another embodiment, the focusing coil 110 directs the electromagnetic beam 102 to quickly focus or blur in order to reduce the power of the beam impinging on the surface of the workpiece 104 during the travel time. Exercise. In this way, the energy delivered to the surface of the workpiece 104 can be controlled more precisely. A plurality of features 500 are formed on the surface of the workpiece 104 in the same manner as described above.

  The plurality of features 500 can be indentations, protrusions, or combinations thereof. The plurality of features 500 can be arranged in a pattern in which the spacing 508 between the features 500 is substantially uniform. Although FIGS. 5A, 5B, and 5C illustrate a pattern of discrete features 500, the features 500 can be in contact with each other, superimposed, or merged. One possible overlay design embodiment is shown in FIG. 5D. In another embodiment, an array of superimposed features 500 can be formed to form ridges or grooves on the surface of the workpiece that enhance the deposition of the deposited thin film.

  FIG. 6 is a schematic cross-sectional view of one embodiment of the surface of a workpiece 104 in contact with an electromagnetic beam, such as electromagnetic beam 102 having a beam diameter 606. As shown, the electromagnetic beam 102 strikes the surface at an incident angle 610. The incident angle 610 is defined as an angle formed by a line 610A perpendicular to the surface of the workpiece 104 and a line 610B parallel to the electromagnetic beam 102. The angle of incidence can be in the range of about −45 ° to about 45 °, preferably about −30 ° to 30 °. In other words, the angle of incidence can be within about 45 °, measured with respect to line 610A. The feature 500 generally includes a recess 602 and a protrusion 604 is formed when exposed to the electromagnetic beam 102.

  By deflecting the beam at this angle of incidence, the material that separates from the surface during the texturing process will not be able to see the various hardware components in the column 120, thus improving the life of the hardware or the maintenance cycle of the hardware. Can also be obtained. Deflection of the beam relative to the column 120 can preferably prevent, preferably, ions from rising within the column 120 from damaging the cathode 106 and other components within the column 120.

  The inventors do not want to stick to any one particular explanation why these features 500 are formed, but the workpiece and surface material of the workpiece 104 are at an elevated temperature, and the workpiece is in some cases. It is assumed that the material is heated to a temperature higher than the boiling temperature of the material constituting 104. When the part of the workpiece is heated rapidly, the material is released to the outside. Therefore, a recess 602 is formed at a position where the material is discharged, and a protrusion 604 is formed at a position where the discharged material is deposited.

  The recess 602 is characterized by having a surface 622. The recess 602 has a depth 612 defined as the vertical distance from the top surface 620 of the workpiece 104 to the bottom of the recess 602, which depth ranges from about 0.001 inch to about 0.060 inch. The recess has a surface diameter 614 ranging from about 0.005 inches to about 0.100 inches, preferably from about 0.008 inches to about 0.089 inches. The recess has an internal diameter 616. The inner diameter 616 is defined as the maximum distance between two points parallel to the top surface 620 of the workpiece 104 on the surface 622. In one embodiment, the recess has an internal diameter 616 that is greater than the surface diameter 614. In another embodiment, the recess has an inner diameter 616 that is smaller than the surface diameter 614. In one embodiment, the protrusion 604 has a height in the range of about 0.002 inches to about 0.060 inches, preferably about 0.002 inches to about 0.046 inches. In an example dimension range for feature 500 formed in an aluminum workpiece (Applied Materials part number 0020-44438), surface diameter 614 is about 0.029 inches to about 0.089 inches and height 618 is about 0.017 inches to about 0.046 inches, and depth 612 is about 0.023 inches to about 0.036 inches. In another example of the typical range of dimensions of the feature 500 formed in the titanium workpiece (part number 0020-46649), the surface diameter 614 is about 0.012 inches to about 0.031 inches and the height 618 is about 0.002. Inches to about 0.004 inches, and depth 612 is about 0.006 inches to about 0.011 inches.

  Although FIG. 6 shows the formation of a particular feature including a recess 602 and two protrusions 604, the formation of only a recess, or only a protrusion, or varying ratios and combinations of recesses and protrusions is also within the scope of the present invention Is in. In addition, the recesses can have varying shapes, depths, surface diameters, and internal diameters. Similarly, the protrusions can have varying shapes and heights and varying contact angles with the workpiece surface. The protrusions and recesses can touch, overlap, or merge with each other or be spaced apart from each other. In one embodiment, the spacing between protrusions or recesses is less than about 0.02 inches.

  In one embodiment, the beam can be deflected small during the beam downtime to form features that differ from the static shape of the electromagnetic beam projected onto the surface of the workpiece. Desirable shapes obtained by deflecting the beam during the downtime can include, for example, a star, oval, diamond, triangle, rectangle, pentagon, hexagon, or other polygon.

  In one embodiment, after surface texturing with the electromagnetic beam 102, a stream of hard particles is sprayed onto the workpiece 104 (“bead spraying”). The hard particles can comprise, for example, aluminum oxide, garnet, silicon carbide, or silicon oxide, and the particle size can be about 24 to about 80 grit (about 535 microns to about 192 microns). it can. Typically, the “bead spray” process is performed at a delivery pressure of about 5 to about 70 psi. Hard particles can be sprayed from a nozzle and can also be sprayed dry or as part of an aqueous slurry composition. Generally speaking, the surface roughness of the workpiece 104 resulting from the bead spray process is finer than the roughness generated using the electromagnetic beam 102. The bead spray process also removes any loosely attached material (eg, protrusions formed by the texturing process). The roughness formed by the bead spray process increases the retention or adhesion of the textured component when the material is deposited thereon. Furthermore, bead spraying can be used to clean the used components. The bead spray process removes the material deposited on the component and restores the surface finish originally applied to the component prior to the deposition process.

In another embodiment, the workpiece 104 is chemically roughened after the surface texturing process. The expression “chemically rough” is to be interpreted broadly and includes, but is not limited to, chemical etching of the component surface, electrochemical etching of the component surface, or combinations thereof. The chemical roughening process is used to form a rough surface that can help improve adhesion of the deposited thin film to the workpiece 104, similar to the bead spray process described above. The method of chemically roughening the surface of the workpiece 104 depends on the material that makes up the workpiece, and can be easily understood if you are familiar with the fields of chemical cleaning, metallurgy, and chemical processing. Chemical etching refers to, but is not limited to, the process of removing material from the surface of a workpiece, generally using chemical activity. Examples of typical chemicals that can be used are aqueous acidic solutions containing acids such as sulfuric acid (H ₂ SO ₄ ), nitric acid (HNO ₃ ), hydrochloric acid (HCl) or combinations thereof, or potassium hydroxide It can be an aqueous basic solution containing chemicals such as (KOH), ammonia hydroxide (NH ₄ OH), or combinations thereof. In another embodiment, the chemical etching process of the workpiece surface can be performed using a dry etching (plasma etching) process. Dry etching, generally speaking, is a process that generates a plasma that interacts with the workpiece surface and ultimately energizes or dissociates reactive gas species that remove material from the surface. Electrochemical etching is generally, but not limited to, material from the workpiece surface by applying an anode bias to the workpiece against another element that is immersed in the electrolyte solution and acts as the cathode. It is the process of removing. An example of an electrochemical etching process that can benefit from the present invention is described in US patent application Ser. No. 09 / 918,683 (Attorney Docket No. 5431), Jul. 27, 2001, “Electrochemically roughened aluminum semiconductor processing. Reference is made to the “device surface”.

Method for reducing particle contamination In another embodiment of the present invention, a method for reducing contamination in a process chamber is provided. In one embodiment, the method reduces contamination of the substrate supplied to the process chamber. Generally speaking, the chamber is any enclosed or partially enclosed chamber on which the material is likely to condense on the interior surface of the chamber or on the surfaces of the components within the chamber. Can do. In one embodiment, the chamber is a substrate processing chamber. This chamber is a chamber suitable for vacuum processing of a semiconductor substrate or a glass panel. The wafer processing chamber can be, for example, a deposition chamber. Typical deposition chambers include sputtering chambers, physical vapor deposition (PVD) chambers, and ion metal plasma (IMP) chambers, chemical vapor deposition (CVD) chambers, etching chambers, molecular beam epitaxy (MBE) chambers, atomic layer deposition (ALD). Includes chambers and others. The chamber can also be an etching chamber, such as a plasma etching chamber. Examples of other suitable process chambers include ion implantation chambers, annealing chambers, and other furnace chambers. In a preferred embodiment, the chamber is a substrate process chamber in which the substrate is exposed to one or more vapor phase materials.

  FIG. 7 is a simplified cross-sectional view of a sputtering reactor 700 that can reduce contamination using the embodiments described below. Reactor 700 includes a vacuum chamber 716 and a substrate support 736 having a top surface 736A. The substrate support 736 can be, for example, an electrostatic chuck. The reactor 700 further includes a shield assembly 718 and an elevator system 732. A substrate 720 (eg, a semiconductor wafer) is positioned on the top surface 736A of the substrate support 736. In the illustrated arrangement, the substrate support 736 is attached to an ordinary vertically movable elevator system 732 by a plurality of screws. For clarity, some hardware such as gas inlet manifolds and / or vacuum pumps are omitted.

  The illustrated vacuum chamber 716 includes a cylindrical chamber wall 714 and a support ring 712 attached to the top of the chamber wall. The upper portion of the chamber is closed by a target plate 706 having an internal surface 706A. The target plate 706 is electrically insulated from the chamber wall 714 by an annular insulator 710 disposed between the target plate 706 and the support ring 712. In general, O-rings (not shown) for vacuum sealing are used above and below the insulator 710 to ensure the integrity of the vacuum in the chamber 716. The target plate 706 can be made of a material that will be a vapor deposition seed, or can include a film of a vapor deposition seed. A power source 702 is connected to the target plate 706 to facilitate the sputtering process.

  The substrate support 736 holds and supports the substrate 720 in the chamber 716. Substrate support 736 can include one or more electrodes 734 embedded within support body 738. The electrodes are driven by a voltage from an electrode power source 704 and clamp the substrate 720 to the support surface of the chuck in response to the application of the voltage. The chuck body can be made of, for example, a ceramic material.

  A wall-shaped cylindrical shield member 742 is attached to the support ring 712. The shield member 742 has a cylindrical shape only in conformity with the shape of the chamber and / or the base body. Of course, the shield member 742 can have any shape. Examples of parts include 0020-45544, 0020-47654, 0020-BW101, 0020-BW302, 0190-11821, 0020-44375, 0020-44438, 0020 available from Applied Materials, Inc., Santa Clara, California. -43498, 0021-JW077, 0020-19122, 0020-JW096, 0021-KS556, 0020-45695.

  The shield assembly 718 further includes an annular vapor deposition ring 730 in addition to the shield member 742. The inner diameter of the ring 730 is selected so that the ring fits circumferentially over the edge of the substrate 720 without contacting the substrate. The annular deposition (shadow) ring rests on the alignment ring 728, which is supported by a flange (not shown) extending from the substrate support 736. In addition, other components such as clamp rings used in physical vapor deposition (PVD) can be textured according to the processes described above and used for the intended application. Examples of annular deposition (shadow) rings and / or clamp rings include 0020-43171 and 0020-46649 available from Applied Materials, Inc., Santa Clara, California.

  During the sputter deposition process, process gas is supplied to the chamber and power is applied to the target plate 706. The process gas is ignited into plasma and accelerated toward the target plate 706. The process gas thereby expels particles from the target plate and the particles are deposited on the substrate 720 to form a coating of the material deposited on the substrate.

  The shield assembly 718 confines the plasma and sputtered particles generally within the reaction zone 777, but necessarily the sputtered particles initially in the plasma or gaseous state condense on the various inner surfaces of the chamber. For example, the sputtered particles can be on the inner surface 718A of the shield assembly 718, on the inner surface 706A of the target plate 706, on the inner surface 712A of the support ring 712, on the inner surface 730A of the deposition ring 730, and It can condense on the other inner surface of the chamber. In addition, other surfaces, such as the top surface 736A of the substrate support 736, begin to become contaminated during or during the deposition sequence.

  Generally speaking, an “inner surface” is any surface that has an interface with the chamber 716. A chamber component is any removable element that is wholly or partially contained within the process chamber. The chamber component can be a vacuum chamber component, ie, a chamber component that is disposed within a vacuum chamber, such as chamber 716, for example. The condensed material formed on the inner surface of the chamber component typically has only limited adhesion and can be released from the component and contaminate the substrate 720.

  To reduce the tendency of condensed foreign matter to separate from process chamber components, for example, shield assembly 718, target plate 706, support ring 712, deposition ring 730, coil (not shown), coil support (not shown). ), A deposition collimator (not shown), a support body (pedestal) 738, an alignment ring 728, a shutter disk (not shown), or a substrate support 736, for example, a working chamber of the apparatus 100. To a texturing chamber such as 114.

  Please refer to FIG. The series of steps 800 begins at step 802 and proceeds to step 804 where a beam of electromagnetic energy is scanned across the surface of one or more chamber components to form a plurality of features thereon. These features can be indentations, protrusions, or combinations thereof. The nature of the features thus formed on the surface of the chamber component is similar to the workpiece 104 described above. Generally speaking, step 804 includes steps 301-314 described with respect to FIGS. 3A, 3B, 3C, 3D, 3E, and 3F.

In an alternative embodiment, the method further includes roughening the surface of the process component, ie, the workpiece, after forming the feature 500 on the surface by the electromagnetic beam 102. The process of roughening the surface of the workpiece, such as a “bead spray” process after forming the feature 500, or a process of chemically roughening, is performed on the surface 622 and the protrusion 604 of the recess 602 formed by the surface texturing process. Since the surface is fairly smooth (surface roughness (R _a ) of about 64 microinches), the adhesion of the deposited material to the workpiece can be improved. It is believed that the smooth surface obtained by texturing is caused by surface tension acting on the molten surface that occurs during the texturing process. Intrinsic stress found in the deposited material (eg, crystal defects, stacking faults, etc.) and / or extrinsic stress (eg, temperature difference between workpiece and deposited material, thermal expansion mismatch, etc.) It may be important to roughen the surface by a “bead spray” process or a chemical roughening process, as this may cause bending and / or destruction of the deposited material. Bending or breaking of the deposited material can produce particles and can lead to contamination of the substrate 720. The addition of the roughening step of the present invention helps to improve the adhesion of the deposited material to the workpiece by localized mechanical attachment or bonding. In one embodiment, the surface of the chamber component or workpiece is further roughened after the texturing process in step 804 by spraying a stream of hard particles (“bead spray”) onto the surface of the component. The hard particles can comprise, for example, aluminum oxide, garnet, silicon oxide, or silicon carbide, and the particle size can be from about 24 to about 80 grit. Typically, the “bead spray” process is performed at a delivery pressure of about 5 to about 70 psi. The process of spraying the bead on the part also has the effect of removing lightly adhered material left from the texturing process.

  In another embodiment of the present invention, the process kit component (ie, workpiece) is chemically cleaned after being textured. Because strict cleanliness is required to improve device yield in semiconductor manufacturing, any material that can be granulated, decomposed, vaporized, or separated from process components during processing must be minimized. . Some typical sources of contamination found after the texturing process are, for example, lightly adhering materials resulting from the “spouting” of process component materials due to localized heating by the electromagnetic beam, Contamination from handling of process components and / or any contamination by chamber texturing, bead spraying, stress relief, or chemical roughening may be included. Typical cleaning processes include, for example, caustic etching / degreasing steps, DI water cleaning, etching in acid or base solutions to remove contaminants in or on the surface layer of process components, high pressure DI Water cleaning, ultrasonic or megasonic DI cleaning, and vacuum furnace or nitrogen blow drying steps can be included. The cleaning requirements necessary to improve device yield in semiconductor manufacturing can be understood by those familiar with the field of UHV chemical cleaning and / or semiconductor manufacturing.

  In one embodiment, the cleaning process is performed after all of the texturing process steps are completed, but before the step of placing the components in the process chamber. Thus, this embodiment helps to ensure that all contamination is removed before using process components in the process chamber. In another embodiment, the cleaning process is performed only after the bead spraying process to remove any contamination left after the texturing process, handling contamination, and residual particles after bead spraying. In yet another embodiment, the texturing process is performed provided that the process components are handled in a clean environment and cleaned in DI water before being delivered to the packaging or process chamber. It is possible to clean the components before doing so.

  In step 806, one or more chamber components are positioned in a process chamber, such as chamber 716 in sputtering reactor 700. As shown in step 808, a process sequence is initiated in the reactor to form a sputtered layer on the substrate 720 in the reactor 700.

  Although the above description details a method for reducing contamination in a sputtering reactor, the use of a method for reducing contamination in any number of different types of process chambers is within the scope of the present invention. The present invention is applicable to any process chamber having an internal surface on which material can condense. Any component that is partly or fully within the process chamber that can be removed from the process chamber and placed in a texturing apparatus such as apparatus 100 is processed using the method of the present invention. Suitable for

  The method can be used to reduce contamination in a process chamber that is designed to modify deposition, etching, heating, or otherwise on a workpiece, substrate, or layer deposited thereon. . In one embodiment, the method is designed to sputter deposit a layer of refractory metal or refractory metal compound, such as a layer of titanium, titanium nitride, tantalum, tungsten, or tantalum nitride, onto a substrate. Used to reduce contamination in the chamber. In other similar embodiments of the invention, the texturing method is used to reduce contamination in molecular beam epitaxy (MBE), atomic layer deposition (ALD), chemical vapor deposition (CVD), or dry etching processes. can do. Components that may require a texturing process generally undergo a certain amount of deposition during the processing cycle (during the deposition or cleaning process) and the deposited thin film is directly or indirectly substrate Components that have a tendency to contaminate. Examples of typical components that require texturing in non-sputtering reactors such as the MxP +, Super-e, or eMax etching systems available from Applied Materials, Inc. of Santa Clara, California are 0040-41188 , 0040-41189, 0021-15694, 0040-45966, 0040-44917, 0020-17482, 0020-07569, 0020-07570, 0020-07571, 0020-07567, and 0020-07568.

  In another embodiment, after step 808, one or more chamber components are removed from the process chamber and a condensed contaminant removal process that can adhere to the textured surface is initiated.

  The removal of condensed foreign matter can be accomplished by blowing a stream of hard particles onto the surface of one or more process chamber components. The hard particles can comprise, for example, aluminum oxide, garnet, silicon oxide, or silicon carbide, and can have a particle size of about 24 to about 80 grit. Preferably, this spraying is sufficient to remove foreign material without substantially changing the texture (ie, dents and protrusions) on the surface of the component.

  In another embodiment, the surface is treated with a chemical fluid to remove foreign matter condensed on the surface of one or more process chamber components. Chemical fluid treatment includes chemicals such as degreasing compositions, sodium hydroxide, potassium permanganate, potassium hydroxide, ammonium hydroxide, hydrogen peroxide, nitric acid, hydrofluoric acid, hydrochloric acid, and combinations thereof. The surface can be immersed in or sprayed with these chemicals.

  This chemical fluid treatment can be used in addition to or instead of spraying hard particles. Alternatively, other methods of removing foreign material from the textured surface are also contemplated. Preferably, the chemical treatment does not reduce the macro roughness of the dents formed during the texturing process. Thereby, the components can be repositioned into the chamber and again provide increased adhesion due to the material condensing on the surface.

  In one embodiment of the present invention, the texturing process can be used to form protrusions on the surface of the workpiece, such as by arc welding process, MIG welding process, MBE process, or other similar processes. Adding to the workpiece may also be included. To ensure that the added material is deposited, the process is performed in a non-oxidizing (eg, oxygen-free) environment in a vacuum chamber and / or the workpiece is heated to a temperature near the melting point of the material. There may be a need. Thus, adding material to form protrusions means increasing adhesion of the deposited thin film to the workpiece. It is envisioned that this embodiment can be substituted for or added to step 310 of FIGS. 3A-3F and step 804 of FIG.

  Although several preferred embodiments incorporating the teachings of the present invention have been described in detail above, those skilled in the art can readily devise many other embodiments incorporating these teachings.

1 is a schematic cross-sectional view of a surface texturing device that can be used to implement an embodiment of the present invention. FIG. 2 is a schematic diagram of a control system that can be coupled to a surface texturing device to implement an embodiment of the present invention. FIG. 3 shows a sequence of steps of a method that can be used to modify the surface of a material using an embodiment of the present invention. FIG. 3 shows a sequence of steps of a method that can be used to modify the surface of a material using an embodiment of the present invention. FIG. 3 shows a sequence of steps of a method that can be used to modify the surface of a material using an embodiment of the present invention. FIG. 3 shows a sequence of steps of a method that can be used to modify the surface of a material using an embodiment of the present invention. FIG. 3 shows a sequence of steps of a method that can be used to modify the surface of a material using an embodiment of the present invention. FIG. 3 shows a sequence of steps of a method that can be used to modify the surface of a material using an embodiment of the present invention. FIG. 3 is a schematic diagram showing an electron beam sequentially contacting various parts of a workpiece to change the surface of the material. It is a schematic diagram showing the upper surface of the surface of the work piece textured using the embodiment of the present invention. FIG. 5B is an enlarged top view showing the workpiece surface of FIG. 5A and features thereon. FIG. 6 is an enlarged top view showing the top surface of a workpiece surface including a hexagonal close packed array of features. FIG. 6 is an enlarged top view showing the top surface of a workpiece surface including an overlapping array of features. It is a schematic sectional drawing of the feature formed on the surface of a workpiece by embodiment of this invention. 1 is a schematic cross-sectional view of a sputtering reactor that can reduce contamination by using an embodiment of the present invention. FIG. 3 illustrates a sequence of steps of a method that can be used to reduce contamination in a process chamber using an embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Surface texturing apparatus 102 Electromagnetic (electron) beam 104 Work piece 106 Cathode 108 Anode 112 High speed deflection coil 114 Work chamber 116 Bias cup 118 Hole 120 Column 122 High voltage cable 124 Pump 126 Valve 128, 132 Separation valve 130 Vacuum pump 140 Operation Means 150 Heating Element 181 Energy Source 200 Microprocessor Controller 204 Function Generator 500 Feature 502 Area on Workpiece Surface 504 Beam Diameter 508 Spacing Between Features 510 Feature Pattern 602 Recess 604 Protrusion 606 Beam Diameter 610 Incident Angle 612 Depth of Recess 614 surface diameter of the recess 616 internal diameter of the recess 618 height of the protrusion 620 top surface of the workpiece 622 surface of the recess 700 sputtering reactor 02 Power supply 704 Electrode power supply 706 Target plate 710 Insulator 712 Support ring 714 Chamber wall 716 Vacuum chamber 718 Shield assembly 720 Base 728 Alignment ring 730 Deposition ring 732 Elevator system 734 Electrode 736 Base support 738 Support body 742 Shield member 777 zone

Claims (47)

A method of texturing a surface of a component used in a semiconductor process chamber, comprising:
Scanning the electromagnetic beam at an incident angle of 0-45 ° across the surface of the component and perpendicular to the surface of the component to form a plurality of features having indentations and protrusions on the surface Step to
Roughening the surface of the component and the features;
And the recess has an internal diameter that is greater than a surface diameter.   The method of claim 1, wherein the scan comprises a travel time and a dwell time. The electromagnetic beam has a power density in a range of 10 ⁴ W / mm ^{2 to} 10 ⁷ W / mm ^{2 at} a point on a surface of the component to which the beam is guided. Item 2. The method according to Item 1.   The method of claim 1, wherein the roughening of the surface of the component comprises the step of spraying a bead on the component.   The method of claim 1, wherein the step of roughening the surface of the component comprises the step of chemically roughening the component.   The method of claim 1, further comprising the step of heating the component prior to the step of scanning the electromagnetic beam.   The method of claim 6, wherein heating the component comprises preheating the component to a temperature below a temperature at which the component begins to melt, flow, or substantially decompose. Method.   The method of claim 6, wherein the component is heated using a radiant heat lamp, an induction heater, or an infrared resistance heater.   The method of claim 4, wherein the step of spraying the bead is performed using grit particles comprising aluminum oxide, garnet, silicon carbide, silicon oxide, or combinations thereof.   5. The method of claim 4, further comprising the step of chemically cleaning the component after spraying the component with a bead.   6. The method of claim 5, further comprising the step of chemically cleaning the component after the step of chemically roughening the component.   The method of claim 1, further comprising chemically cleaning the component after the step of forming the plurality of features on a surface of the component. Wherein for a plurality of features to be formed, before the step of Ru is scanning the electromagnetic beam, The method of claim 1, further comprising the step of removing the stress of the component.   The method of claim 1, further comprising removing stress on the component after forming the plurality of features. To form the plurality of features, before the step of Ru is scanning the electromagnetic beam, and removing the stress of the component, after the step of forming a plurality of features on the surface, of the component 2. The method of claim 1, further comprising the step of releasing stress.   5. The method of claim 4, further comprising the step of removing stress on the component after the step of spraying a bead on the component. Said electromagnetic beam in order to compensate for some kind of possible distortion caused by forming the features on one surface of the component, used to form features on the other surface of the component The method of claim 1, wherein: A method of texturing a surface of a component used in a semiconductor process chamber, comprising:
Pumping the texturing chamber to a pressure in the range of 10 ⁻³ Torr to 10 ⁻⁵ Torr;
Scanning an electron beam with an electron beam current of 15-50 milliamps at an acceleration voltage of 50-160 kilovolts across the surface of the component at an incident angle of 0-45 ° with respect to a line perpendicular to the surface of the component Forming a plurality of features having indentations and protrusions on the surface;
Roughening the surface of the component and the features;
And the recess has an internal diameter that is greater than a surface diameter.   The method of claim 18, wherein the scan comprises a travel time and a dwell time. The electron beam has a power density in the range of 10 ⁴ W / mm ^{2 to} 10 ⁷ W / mm ^{2 at} a point on the surface of the component to which the beam is directed. Item 19. The method according to Item 18.   The method of claim 18, wherein the step of roughening the surface of the component comprises spraying a bead on the component.   The method of claim 18, wherein roughening the surface of the component comprises chemically roughening the component.   The method of claim 18, further comprising heating the component prior to the step of scanning the electron beam.   24. The method of claim 23, wherein heating the component comprises preheating the component to a temperature below that at which the component begins to melt, flow, or substantially decompose. Method.   24. The method of claim 23, wherein the component is heated using a radiant heat lamp, an induction heater, or an infrared resistance heater.   The method of claim 21, wherein the step of spraying the bead is performed using grit particles comprising aluminum oxide, garnet, silicon carbide, silicon oxide, or combinations thereof.   The method of claim 21, further comprising the step of chemically cleaning the component after the step of spraying the component with a bead.   23. The method of claim 22, further comprising the step of chemically cleaning the component after the step of chemically roughening the component.   The method of claim 18, further comprising chemically cleaning the component after forming the plurality of features on a surface of the component. Before the step of Ru to form a plurality of features, the method according to claim 18, further comprising the step of removing the stress of the component.   The method of claim 18, further comprising removing stress on the component after forming the plurality of features. Removing said components of stress prior to the step of Ru to form a plurality of features, further comprise the step of releasing said component of stress after the step of forming a plurality of features on the surface 19. A method according to claim 18 characterized in that   The method of claim 21, further comprising the step of removing stress on the component after spraying a bead on the component. Said electromagnetic beam in order to compensate for some kind of possible distortion caused by forming the features on one surface of the component, used to form features on the other surface of the component 19. The method of claim 18, wherein: A process chamber component for use in a process chamber comprising:
A body having one or more surfaces;
A plurality of features formed on the surface;
Including
The features are formed by scanning a beam of electromagnetic energy across the surface of the process chamber component at an angle of incidence of 30-45 ° with respect to a line perpendicular to the surface of the component. The selected features are selected from the group consisting of indentations, protrusions, and combinations thereof;
The process chamber component, wherein the surface is chemically roughened after a plurality of features are formed on the surface, and the recess has an internal diameter greater than the surface diameter.   36. The process chamber component of claim 35, wherein the surface is chemically cleaned after the process chamber component is chemically roughened. A process chamber component for use in a process chamber comprising:
A body having one or more surfaces;
A plurality of features formed on the surface;
Including
The features are formed by scanning a beam of electromagnetic energy across the surface of the process chamber component at an incident angle of 0-45 ° with respect to a line perpendicular to the surface of the component. The selected features are selected from the group consisting of indentations, protrusions, and combinations thereof;
The component is stress relieved prior to scanning the electromagnetic beam across the surface of the process chamber component, and the recess has an internal diameter that is greater than the surface diameter. A process chamber component for use in a process chamber comprising:
A body having one or more surfaces;
A plurality of features formed on the surface;
Including
After the component is stress relieved and heated to a preheat temperature, the feature is incident at an angle of incidence of 0-45 ° across the surface of the process chamber component and perpendicular to the surface of the component. Formed by scanning a beam of electromagnetic energy,
The formed features indentations, projections, and are selected from the group consisting of combinations, the indentations process chamber components, characterized in that it has a larger inner diameter than the surface diameter. A process chamber component for use in a process chamber comprising:
A body having one or more surfaces;
A plurality of features formed on the surface;
Including
The features are formed by scanning a beam of electromagnetic energy across the surface of the process chamber component at an angle of incidence of 30-45 ° with respect to a line perpendicular to the surface of the component. The selected features are selected from the group consisting of indentations, protrusions, and combinations thereof;
The component is stress relieved after the plurality of features are formed, and the recess has an internal diameter greater than a surface diameter. A process chamber component for use in a process chamber comprising:
A body having one or more surfaces;
A plurality of features formed on the surface;
Including
The features are formed by scanning a beam of electromagnetic energy across the surface of the process chamber component at an angle of incidence of 30-45 ° with respect to a line perpendicular to the surface of the component. The selected features are selected from the group consisting of indentations, protrusions, and combinations thereof;
Said component, before Ru to form a plurality of features on the surface, and after a plurality of features formed on the surface, are stress relieved, said recesses having a larger internal diameter than the surface diameter Feature process chamber components. A process chamber component for use in a process chamber comprising:
A body having one or more surfaces;
A plurality of features formed on the surface;
Including
The features are formed by scanning a beam of electromagnetic energy across the surface of the process chamber component at an incident angle of 0-45 ° with respect to a line perpendicular to the surface of the component. The selected features are selected from the group consisting of indentations, protrusions, and combinations thereof;
The component is stress relieved after the plurality of features are formed, and the recess has an internal diameter greater than a surface diameter. A process chamber component for use in a process chamber comprising:
A body having one or more surfaces;
A plurality of features formed on the surface;
Including
After the process chamber component is heated using a radiant heat lamp, induction heater, or infrared resistance heater, the feature crosses the surface of the process chamber component to the surface of the component Formed by scanning a beam of electromagnetic energy at an incident angle of 30-45 ° to a perpendicular line,
The formed features indentations, projections, and are selected from the group consisting of combinations, the indentations process chamber components, characterized that you have a greater internal diameter than the surface diameter. A process chamber component for use in a process chamber comprising:
A body having one or more surfaces;
A plurality of features formed on the surface;
Including
The features are formed by scanning a beam of electromagnetic energy across the surface of the process chamber component at an incident angle of 0-45 ° with respect to a line perpendicular to the surface of the component. The feature is selected from the group consisting of a recess, a protrusion, and combinations thereof, the recess having an internal diameter greater than the surface diameter;
The component has features formed on one and other surfaces, the features on the other surface compensate for stress induced by the formation of features on the one surface Process chamber components. The method of claim 18, wherein the power density at a point on the surface of the component is in the range of 10 ⁴ W / mm ^{2 to} 10 ⁵ W / mm ² .   6. The method of claim 5, wherein the step of chemically roughening the surface comprises the step of electrochemically roughening the surface.   23. The method of claim 22, wherein chemically roughening the surface comprises electrochemically roughening the surface.   36. A process chamber component according to claim 35, wherein the surface is electrochemically roughened.

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