JP5572936B2 - 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 - Google Patents

熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 Download PDF

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Publication number
JP5572936B2
JP5572936B2 JP2008246255A JP2008246255A JP5572936B2 JP 5572936 B2 JP5572936 B2 JP 5572936B2 JP 2008246255 A JP2008246255 A JP 2008246255A JP 2008246255 A JP2008246255 A JP 2008246255A JP 5572936 B2 JP5572936 B2 JP 5572936B2
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JP
Japan
Prior art keywords
optical semiconductor
resin composition
group
semiconductor element
molding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008246255A
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English (en)
Japanese (ja)
Other versions
JP2009149845A (ja
JP2009149845A5 (enExample
Inventor
勇人 小谷
直之 浦崎
真人 水谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Showa Denko Materials Co Ltd
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd, Showa Denko Materials Co Ltd, Resonac Corp filed Critical Hitachi Chemical Co Ltd
Priority to JP2008246255A priority Critical patent/JP5572936B2/ja
Publication of JP2009149845A publication Critical patent/JP2009149845A/ja
Publication of JP2009149845A5 publication Critical patent/JP2009149845A5/ja
Application granted granted Critical
Publication of JP5572936B2 publication Critical patent/JP5572936B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Landscapes

  • Injection Moulding Of Plastics Or The Like (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Led Device Packages (AREA)
JP2008246255A 2007-11-26 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置 Active JP5572936B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008246255A JP5572936B2 (ja) 2007-11-26 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007304255 2007-11-26
JP2007304255 2007-11-26
JP2008246255A JP5572936B2 (ja) 2007-11-26 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

Publications (3)

Publication Number Publication Date
JP2009149845A JP2009149845A (ja) 2009-07-09
JP2009149845A5 JP2009149845A5 (enExample) 2011-12-08
JP5572936B2 true JP5572936B2 (ja) 2014-08-20

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JP2008246255A Active JP5572936B2 (ja) 2007-11-26 2008-09-25 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

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JP (1) JP5572936B2 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2540776B1 (en) 2007-09-25 2017-08-09 Hitachi Chemical Co., Ltd. Thermosetting light-reflecting resin composition, optical semiconductor element mounting board produced therewith, method for manufacture thereof, and optical semiconductor device
JP5262644B2 (ja) * 2007-12-04 2013-08-14 日立化成株式会社 成型体の離型性評価方法及び成型体の製造方法
JP5401905B2 (ja) * 2008-04-25 2014-01-29 日立化成株式会社 熱硬化性樹脂組成物
JP5325560B2 (ja) * 2008-12-18 2013-10-23 スタンレー電気株式会社 発光装置、および、発光装置の製造方法
US9975284B2 (en) 2012-01-17 2018-05-22 Dai Nipon Printing Co., Ltd. Electron beam curable resin composition, resin frame for reflectors, reflector, semiconductor light emitting device, and method for producing molded body
JP2012162729A (ja) * 2012-04-11 2012-08-30 Hitachi Chemical Co Ltd 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP6149457B2 (ja) * 2013-03-28 2017-06-21 大日本印刷株式会社 光半導体実装用基板、半導体発光装置、及び光半導体実装用基板の製造方法
JP7274245B1 (ja) * 2023-01-31 2023-05-16 国立大学法人 名古屋工業大学 離型条件評価方法、離型条件評価システムおよびプログラム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5037898A (en) * 1990-02-27 1991-08-06 Shell Oil Company Polysiloxane-polylactone block copolymer modified thermostat compositions
JP3334998B2 (ja) * 1994-03-30 2002-10-15 住友ベークライト株式会社 エポキシ樹脂組成物
JP2000281750A (ja) * 1999-03-31 2000-10-10 Sumitomo Bakelite Co Ltd エポキシ樹脂組成物及び半導体装置
JP3870825B2 (ja) * 2002-02-27 2007-01-24 日立化成工業株式会社 封止用エポキシ樹脂成形材料及び電子部品装置
JP5060707B2 (ja) * 2004-11-10 2012-10-31 日立化成工業株式会社 光反射用熱硬化性樹脂組成物
EP2768031B1 (en) * 2005-08-04 2021-02-17 Nichia Corporation Light-emitting device
JP5303097B2 (ja) * 2005-10-07 2013-10-02 日立化成株式会社 熱硬化性光反射用樹脂組成物、ならびにこれを用いた光半導体搭載用基板とその製造方法および光半導体装置。
JP4968258B2 (ja) * 2006-06-02 2012-07-04 日立化成工業株式会社 光半導体素子搭載用パッケージおよびこれを用いた光半導体装置
JP5540487B2 (ja) * 2007-09-25 2014-07-02 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置
JP5239688B2 (ja) * 2007-11-13 2013-07-17 日立化成株式会社 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板及びその製造方法、並びに光半導体装置

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