JP5564682B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device using a substrate having at least a surface composed of a SiC layer.

  As semiconductor materials, silicon (Si), gallium arsenide (GaAs), and the like are conventionally known. In recent years, the field of application of semiconductor devices has expanded rapidly, and along with this, opportunities for use in severe areas such as high-temperature environments have increased. Therefore, the realization of a semiconductor device that can withstand a high temperature environment is one of the important issues for improving operation reliability and a large amount of information processing and controllability in a wide range of application environments.

  Silicon carbide (SiC) has attracted attention as one of the materials for manufacturing a semiconductor element having excellent heat resistance. SiC is excellent in mechanical strength and resistant to radiation. SiC can easily control valence electrons of electrons and holes by adding impurities, and has a wide forbidden band width (about 3.0 eV for 6H type single crystal SiC and 3.2 eV for 4H type single crystal SiC. ). For these reasons, SiC is expected as a material for next-generation power devices that can realize high temperatures, high frequencies, withstand voltages, and environmental resistance that cannot be realized with the above-described existing semiconductor materials. Patent Documents 1 to 5 disclose a method of manufacturing a semiconductor element by implanting ions into a SiC substrate.

  Patent Document 1 discloses a configuration in which the roughness of the crystal surface in the heat treatment for activating ions can be reduced by forming an ion implantation layer extending in the plane direction. Patent Document 2 describes that when an SiC semiconductor device is manufactured, by additionally implanting C atoms in addition to acceptor atoms, the electrical activation rate of acceptor atoms can be improved and diffusion due to heat treatment can be suppressed. Is disclosed. Further, Patent Document 3 relates to a method of doping a SiC semiconductor with phosphorus atoms as donor impurities, and can increase the electrical activation rate by setting the phosphorus atom implantation temperature to a high temperature of 1,200 ° C. or higher. Is disclosed. Further, Patent Document 4 discloses that at least a pair of single crystal silicon carbide substrates in which the atoms are ion-implanted on each surface are arranged in a sealed container in close proximity or close to each other so that the ion implantation surfaces face each other. An ion implantation annealing method for heat treatment is disclosed. In Patent Document 5, ion activation annealing at 1800 ° C. is performed with a carbon cap formed on a substrate after ion implantation, and then the carbon cap is heated and removed in an oxygen atmosphere at 900 ° C. for 30 minutes, and then a polishing liquid is used. Discloses a method of preventing surface roughness while improving the electrical activation rate by forming an extremely smooth outermost surface by chemical mechanical polishing (CMP).

Japanese Patent Laid-Open No. 2002-261041 JP 2000-68225 A JP-A-11-121393 JP 2006-339396 A JP 2007-115875 A

  Post-annealing at a considerably high temperature (eg, 1600 ° C. or higher) in order to ionize dopants (impurity atoms such as aluminum, boron, or phosphorus) on the surface of the SiC substrate and sufficiently activate the dopants electrically Processing is required. However, such high-temperature treatment may cause Si and SiC to sublime from the surface of the SiC substrate, resulting in deterioration of the flatness of the SiC substrate surface. However, when the above processing is performed at a low temperature, electrical activation cannot be performed sufficiently.

  In the manufacturing method of Patent Document 1, although the annealing process can be performed at a low temperature lower than 1000 ° C. by forming the ion implantation layer so as to spread in the plane direction, depending on the configuration of the semiconductor element, it spreads in the plane direction. In some cases, the ion implantation layer could not be formed. Moreover, although the structure of patent document 2 and patent document 3 can improve electrical activity, the process was complicated and there existed a possibility of causing the fall of a through-put. In addition, the configuration of Patent Document 4 has room for improvement from the viewpoint of increasing the efficiency of the manufacturing process because the single crystal silicon carbide substrate must be annealed. In the manufacturing method of Patent Document 5, a carbon cap is formed after ion implantation, ion activation annealing is performed at 1800 ° C., and then the carbon cap is heated and removed at 900 ° C. in an oxygen atmosphere. Since the roughness of the outermost surface of the later epitaxial layer is generated and the average surface roughness Ra becomes about 1 to 2 nm, a smoothing process by CMP and a sacrificial oxidation process for removing polishing distortion by CMP are required. There was a limit to the efficiency of the manufacturing process.

  The present invention has been made in view of the above circumstances, and its object is to have flatness and sufficient electrical activity in a method for manufacturing a semiconductor device using a substrate having at least a surface formed of a SiC layer. An object of the present invention is to provide an efficient manufacturing method for realizing a semiconductor device.

Means and effects for solving the problems

  The problems to be solved by the present invention are as described above. Next, means for solving the problems and the effects thereof will be described.

According to an aspect of the present invention, a manufacturing method including the following steps is provided in a method for manufacturing a semiconductor device using a substrate having at least a surface composed of a SiC layer. That is, the semiconductor device manufacturing method includes an ion implantation process, a planarization process, a graphene layer formation process, an ion activation process, and a graphene layer removal process. In the ion implantation step, ions are implanted into the substrate. In the planarization step, the substrate into which ions have been implanted in the ion implantation step is heated at a molecular level by heating under a Si vapor pressure having a temperature range of 1500 ° C. or higher and 2300 ° C. or lower. In the graphene layer forming step, the graphene layer is formed on the surface of the substrate into which ions are implanted in the ion implantation step by heating the substrate in a vacuum state in which the temperature range is 1500 ° C. or higher and 2300 ° C. or lower . In the ion activation step, the substrate on which the graphene layer is formed is heated to activate ions. The graphene layer removing step, the temperature range the substrate ion activation process has been performed to remove the graphene layer by heating in the following Si vapor pressure 2300 ° C. 1500 ° C. or higher. Moreover, the region where the ion concentration is insufficient is removed through the planarization step and the graphene layer removal step.

Thereby, the graphene layer is formed flat on the surface of the substrate at the molecular level, so that sublimation of Si and SiC in the heat treatment for ion activation can be effectively suppressed. Therefore, it is possible to effectively prevent deterioration in flatness caused by sublimation of Si and SiC from the surface of the SiC layer. For example, in the case of the (0001) Si plane, about two layers of graphene layers are densely formed on the surface of the ion-implanted epitaxial layer via the interface layer (interface layer). Can be more effectively suppressed. Moreover, since the sublimation of Si and SiC in the ion activation process removes the graphene layer after being suppressed by graphene layer may be surface flatness to obtain a substrate of a good SiC.

In the method for manufacturing a semiconductor element, the following is preferable. That is, the semiconductor device manufacturing method includes an epitaxial layer forming step of forming a single crystal SiC epitaxial layer on the surface of the SiC layer of the substrate by a metastable solvent epitaxy method before the ion implantation step. In the ion implantation step, ions are implanted into the epitaxial layer formed on the surface of the substrate.

  Thereby, a semiconductor element can be manufactured using the epitaxial layer grown on the surface of the substrate.

  In the method for manufacturing a semiconductor element, it is preferable that the substrate is heated at a temperature range of 1600 ° C. or higher and 2300 ° C. or lower in the ion activation step.

  Thereby, ion activation can fully be performed.

In the method for manufacturing a semiconductor element, it is preferable that the graphene layer is formed in a vacuum state under a reduced pressure of 10 ⁻⁴ Pa or less in the graphene layer forming step.

  Thereby, a graphene layer can be formed efficiently.

  In the semiconductor device manufacturing method, the SiC layer is preferably composed of a 4H—SiC single crystal or a 6H—SiC single crystal.

  Thereby, an epitaxial layer composed of single crystal SiC can be efficiently formed on the surface of the substrate.

  In the semiconductor device manufacturing method, the surface of the SiC layer is preferably a (0001) Si plane or a (000-1) C plane.

  Thereby, an epitaxial layer of single crystal SiC can be efficiently grown on the (0001) Si plane or the (000-1) C plane.

  In the semiconductor device manufacturing method, the surface of the SiC layer is preferably a just surface or a surface having an off angle of 8 degrees or less in the <11-20> direction.

  In the semiconductor device manufacturing method, the surface of the SiC layer is preferably a just surface or a surface having an off angle of 8 degrees or less in the <1-100> direction.

  In the method of manufacturing a semiconductor element, the surface of the SiC layer terminates in a step consisting of a full unit height that is one cycle in the stacking direction of SiC molecules or a half unit height that is a half cycle. It is preferable.

  As described above, since the surface of the substrate has a high flatness, a higher quality semiconductor element can be manufactured.

In the method for manufacturing the semiconductor device, by omitting the pre-Symbol graphene layer removing step, it is also possible to obtain a semiconductor element with the graphene layer.

  Thereby, since the surface of the substrate becomes a high-quality graphene semiconductor, a semiconductor element having excellent high-speed conduction performance can be manufactured.

The schematic diagram which shows the high temperature vacuum furnace used for the heat processing for manufacturing a semiconductor element. Sectional drawing which shows the main heating chamber and preheating chamber of a high temperature vacuum furnace in detail. The external appearance photograph and cross-sectional photograph of the crucible which has a carbon getter effect. The schematic diagram explaining a carbon getter effect. Process drawing which shows the process of the first half of the manufacturing method of the semiconductor element using the board | substrate comprised by single crystal SiC. Process drawing which shows the latter half process of the manufacturing method of the semiconductor element using the board | substrate comprised by single crystal SiC. The schematic diagram which shows a mode that the laminated body comprised from a board | substrate, a silicon plate, and a carbon supply feed board | substrate was accommodated in the crucible. The schematic diagram which showed notionally <11-20> direction and <1-100> direction of the substrate surface. The schematic diagram which shows a mode that the board | substrate with which the ion implantation in the planarization process was performed was accommodated in the crucible. The graph which shows the relationship between the vapor-phase annealing temperature under Si vapor pressure, and average surface roughness. The graph which shows the relationship between the vapor-phase annealing temperature under Si vapor pressure, and step height. The schematic diagram for demonstrating the molecular arrangement | sequence and period of 4H-SiC single crystal and 6H-SiC. The top view which shows notionally the relationship between a SiC crystal lattice and a graphene crystal lattice. Sectional drawing which shows notionally the relationship between a SiC crystal lattice and a graphene crystal lattice. The graph which shows the relationship between the coverage of graphene, and the vacuum heating temperature. A photomicrograph showing the surface of the substrate in stages. The schematic diagram which showed notionally the relationship between the density | concentration of the ion inject | poured into the board | substrate, and ion implantation depth. The graph which shows the relationship between the vapor-phase annealing temperature under Si vapor pressure, and an etching rate. The microscope picture which shows the state of the board | substrate which formed the carbon film.

  Next, an embodiment of the invention will be described.

  First, the high-temperature vacuum furnace 11 and the crucible (container) 2 used for manufacturing a semiconductor element will be described. FIG. 1 is a schematic view showing a high-temperature vacuum furnace used for heat treatment for manufacturing a semiconductor element. FIG. 2 is a cross-sectional view showing in detail the main heating chamber and the preheating chamber of the high-temperature vacuum furnace. FIG. 3A is an external view photograph of the crucible 2 taken from above, and FIG. 3B is a cross-sectional micrograph of the crucible 2. FIG. 4 is a schematic diagram for explaining the carbon getter effect.

  As shown in FIGS. 1 and 2, the high-temperature vacuum furnace 11 includes a main heating chamber 21 capable of heating the object to be processed to a temperature of 1000 ° C. to 2300 ° C., and a temperature of the object to be processed of 500 ° C. or more. And a preheating chamber 22 that can be preheated. The preheating chamber 22 is disposed below the main heating chamber 21 and is adjacent to the main heating chamber 21 in the vertical direction. The high-temperature vacuum furnace 11 includes a heat insulating chamber 23 disposed below the preheating chamber 22. The heat insulation chamber 23 is adjacent to the preheating chamber 22 in the vertical direction.

The high-temperature vacuum furnace 11 includes a vacuum chamber 19, and the main heating chamber 21 and the preheating chamber 22 are provided inside the vacuum chamber 19. A turbo molecular pump 34 as a vacuum forming device is connected to the vacuum chamber 19 so that a vacuum of, for example, 10 ⁻² Pa or less, preferably 10 ⁻⁷ Pa or less can be obtained in the vacuum chamber 19. Yes. A gate valve 25 is interposed between the turbo molecular pump 34 and the vacuum chamber 19. Further, an auxiliary rotary pump 26 is connected to the turbo molecular pump 34.

  The high-temperature vacuum furnace 11 includes a moving mechanism 27 that can move an object to be processed between the preheating chamber 22 and the main heating chamber 21 in the vertical direction. The moving mechanism 27 includes a support body 28 that can support an object to be processed, and a cylinder portion 29 that can move the support body 28 up and down. The cylinder portion 29 includes a cylinder rod 30, and one end of the cylinder rod 30 is connected to the support body 28. The high-temperature vacuum furnace 11 is provided with a vacuum gauge 31 for measuring the degree of vacuum and a mass analyzer 32 for performing mass spectrometry.

  The vacuum chamber 19 is connected to a stock chamber (not shown) for storing an object to be processed through a conveyance path 65. The transport path 65 can be opened and closed by a gate valve 66.

  The main heating chamber 21 is formed in a regular hexagonal shape in a plan sectional view and is disposed in the upper part of the internal space of the vacuum chamber 19. As shown in FIG. 2, a mesh heater 33 as a heater is provided inside the main heating chamber 21. A first multilayer heat reflecting metal plate 41 is fixed to the side wall and ceiling of the main heating chamber 21, and the heat of the mesh heater 33 is directed toward the center of the main heating chamber 21 by the first multilayer heat reflecting metal plate 41. It is configured to reflect.

  As a result, a layout is realized in which the mesh heater 33 is arranged so as to surround the object to be processed as a heat treatment target in the main heating chamber 21 and the multilayer heat reflecting metal plate 41 is arranged on the outer side. Accordingly, the object to be processed can be heated strongly and evenly, and the temperature can be raised to a temperature of 1000 ° C. or higher and 2300 ° C. or lower.

  The ceiling side of the main heating chamber 21 is closed by a first multilayer heat reflecting metal plate 41, while a through hole 55 is formed in the first multilayer heat reflecting metal plate 41 at the bottom. The object to be processed can move between the main heating chamber 21 and the preheating chamber 22 adjacent to the lower side of the main heating chamber 21 through the through hole 55.

  A part of the support 28 of the moving mechanism 27 is inserted into the through hole 55. The support 28 has a configuration in which a second multilayer heat-reflecting metal plate 42, a third multilayer heat-reflecting metal plate 43, and a fourth multilayer heat-reflecting metal plate 44 are arranged at intervals from each other in order from the top. .

  The three multilayer heat-reflecting metal plates 42 to 44 are all arranged horizontally and are connected to each other by a column portion 35 provided in the vertical direction. And the receiving stand 36 is arrange | positioned in the space pinched | interposed by the 2nd multilayer heat reflection metal plate 42 and the 3rd multilayer heat reflection metal plate 43, and it is comprised so that a to-be-processed object can be mounted on this receiving stand 36. ing. In the present embodiment, the cradle 36 is made of tantalum carbide.

  A flange is formed at the end of the cylinder rod 30 of the cylinder portion 29, and this flange is fixed to the lower surface of the fourth multilayer heat reflecting metal plate 44. With this configuration, the object to be processed on the cradle 36 can be moved up and down together with the three multilayer heat reflecting metal plates 42 to 44 by expanding and contracting the cylinder portion 29.

  The preheating chamber 22 is configured by surrounding the space below the main heating chamber 21 with a multilayer heat reflecting metal plate 46. The preheating chamber 22 is configured to be circular in a plan sectional view. In the preheating chamber 22, no heating means such as the mesh heater 33 is provided.

  As shown in FIG. 2, in the bottom surface portion of the preheating chamber 22, a through hole 56 is formed in the multilayer heat reflecting metal plate 46. Further, in the multilayer heat reflecting metal plate 46 that forms the side wall of the preheating chamber 22, a passage hole 50 is formed in a portion facing the transport path 65. Further, the high temperature vacuum furnace 11 includes an opening / closing member 51 capable of closing the passage hole 50.

  The heat insulating chamber 23 adjacent to the lower side of the preheating chamber 22 is partitioned on the upper side by the multilayer heat reflecting metal plate 46, and on the lower side and the side portion by the multilayer heat reflecting metal plate 47. A through-hole 57 is formed in the multilayer heat reflecting metal plate 47 covering the lower side of the heat insulating chamber 23 so that the cylinder rod 30 can be inserted.

  A housing recess 58 is formed in the multilayer heat reflecting metal plate 47 at a position corresponding to the upper end of the through hole 57. The storage recess 58 can store the fourth multilayer heat-reflecting metal plate 44 provided in the support 28.

  Each of the multilayer heat reflecting metal plates 41 to 44, 46, and 47 has a structure in which metal plates (made of tungsten) are laminated at a predetermined interval. Also in the opening / closing member 51, a multilayer heat reflecting metal plate having the same configuration is used for a portion that closes the passage hole 50.

  Any material can be used as the material of the multilayer heat-reflecting metal plates 41 to 44, 46, 47 as long as the material has sufficient heating characteristics with respect to the heat radiation of the mesh heater 33 and has a melting point higher than the ambient temperature. Can be used. For example, in addition to the tungsten, a refractory metal material such as tantalum, niobium, or molybdenum can be used as the multilayer heat reflecting metal plates 41 to 44, 46, and 47. Further, carbides such as tungsten carbide, zirconium carbide, tantalum carbide, hafnium carbide, and molybdenum carbide can be used as the multilayer heat reflecting metal plates 41 to 44, 46, and 47. Further, an infrared reflection film made of gold, tungsten carbide or the like may be further formed on the reflection surface.

  And the multilayer heat | fever reflective metal plates 42-44 with which the support body 28 is equipped are the structures which laminated | stacked the punch metal structure tungsten plate which has many small through-holes at predetermined intervals, varying the position of the said through-hole. It has become.

  Further, the number of stacked second multilayer heat reflecting metal plates 42 provided in the uppermost layer of the support 28 is smaller than the number of stacked first multilayer heat reflecting metal plates 41 in the main heating chamber 21.

With this configuration, an object to be processed (for example, a SiC substrate) is stored in an appropriate container in order to prevent contamination in the vacuum chamber 19. The container may be a crucible 2 described later, or may be another container. In this state, the object to be processed is introduced into the vacuum chamber 19 from the transport path 65 and placed on the cradle 36 in the preheating chamber 22. When the mesh heater 33 is driven in this state, the main heating chamber 21 is heated to a predetermined temperature (for example, about 1800 ° C.) between 1000 ° C. and 2300 ° C. At this time, the pressure in the vacuum chamber 19 is adjusted to 10 ⁻³ Pa or less, preferably 10 ⁻⁵ Pa or less by driving the turbo molecular pump 34.

  Here, as described above, the number of laminated second multilayer heat reflecting metal plates 42 of the support 28 is smaller than the number of laminated first multilayer heat reflecting metal plates 41. Accordingly, a part of the heat generated by the mesh heater 33 is appropriately supplied (distributed) to the preheating chamber 22 via the second multilayer heat reflecting metal plate 42, and the single crystal SiC substrate in the preheating chamber 22 is heated to 500 ° C. Preheating can be performed so that the predetermined temperature (for example, 800 ° C.) is reached. That is, preheating can be realized without installing a heater in the preheating chamber 22, and a simple structure of the preheating chamber 22 can be realized.

  After performing the above-mentioned preheating process for a predetermined time, the cylinder part 29 is driven and the support body 28 is raised. As a result, the single crystal SiC substrate passes through the through hole 55 from the lower side and moves into the main heating chamber 21. Thereby, the main heat treatment is immediately started, and the single crystal SiC substrate in the main heating chamber 21 can be rapidly heated to a predetermined temperature (about 1800 ° C.).

  Next, the crucible (container) 2 will be described. As shown to Fig.3 (a), the crucible 2 is a fitting container provided with the upper container 2a and the lower container 2b which can mutually be fitted. The crucible 2 is configured to exhibit a carbon getter effect described later when high temperature processing is performed under vacuum. Specifically, the crucible 2 is made of tantalum metal and exposes the tantalum carbide layer to the internal space. It is prepared to let you. The crucible 2 accommodates silicon pellets (not shown) as a silicon supply source. Thereby, the carbon getter function can be satisfactorily exhibited in the crucible 2 and the internal space can be maintained in a high purity silicon atmosphere.

More specifically, as shown in FIG. 3B, the crucible 2 has a TaC layer formed on the outermost layer, a Ta ₂ C layer formed on the inner side of the TaC layer, and a base layer on the inner side. The tantalum metal as the material is arranged. Since the bonding state of tantalum and carbon shows temperature dependence, the crucible 2 has TaC having a high carbon concentration arranged in the surface layer portion and Ta ₂ C having a slightly low carbon concentration arranged inside. . In addition, a tantalum metal of a base material having a carbon concentration of zero is disposed further inside of Ta ₂ C.

  When the crucible 2 is heat-treated, it is placed in the preheating chamber 22 of the high-temperature vacuum furnace 11 as shown by the chain line in FIG. 2 and preheated at an appropriate temperature (for example, about 800 ° C.). Next, the crucible 2 in the preheating chamber 22 is moved to the main heating chamber 21 that has been heated up to a preset temperature (for example, about 1800 ° C.) by driving the cylinder portion 29, and the temperature is rapidly increased.

  In addition, it is preferable that the atmosphere in the crucible 2 is maintained at about 1 Pa or less during heating in the main heating chamber 21. Moreover, it is preferable that the play of a fitting part when the upper container 2a and the lower container 2b are fitted together is about 3 mm or less. As a result, a substantially sealed state is realized, and in the heat treatment in the main heating chamber 21, the silicon pressure in the crucible 2 is increased to a pressure higher than the external pressure (pressure in the main heating chamber 21), and impurities are removed. Intrusion into the crucible 2 through this fitting portion can be prevented.

  By this temperature increase, the internal space of the crucible 2 is maintained at the vapor pressure of silicon. Further, as described above, the surface of the crucible 2 is covered with a tantalum carbide layer, and the tantalum carbide layer (TaC layer) is exposed to the internal space of the crucible 2. Therefore, as long as the high temperature treatment is continued under vacuum as described above, the crucible 2 has a function of continuously adsorbing and taking in carbon atoms from the surface of the tantalum carbide layer as shown in FIG. In this sense, it can be said that the crucible 2 of this embodiment has a carbon atom adsorption ion pump function (ion getter function). Thereby, since only carbon is selectively occluded in the crucible 2 among the silicon vapor and silicon carbide vapor contained in the atmosphere in the crucible 2 during the heat treatment, the inside of the crucible 2 is maintained in a high purity silicon atmosphere. be able to.

  In the present embodiment, a semiconductor element is manufactured from a substrate using the high-temperature vacuum furnace 11 and the crucible 2 configured as described above. In the following description, it is assumed that the high-temperature vacuum furnace 11 described above is used when the heat treatment or the like is simply performed.

  Next, a method for manufacturing the semiconductor element of this embodiment will be described. First, with reference to FIG. 5 and FIG. 6, an overall flow of a method for manufacturing a semiconductor device in the present embodiment will be described. 5 and 6 are process diagrams showing the steps of a method for manufacturing a semiconductor device using the substrate 70. FIG.

  As shown in FIG. 5A, an epitaxial layer 71 is formed on the surface of a substrate 70 made of single crystal SiC. This board | substrate 70 is comprised by the cylindrical shape with high roundness.

  Next, as shown in FIG. 5B, ion implantation is performed on the substrate 70 on which the epitaxial layer 71 is formed. This ion implantation is performed using an ion doping apparatus having a function of irradiating an object with ions. Ions are selectively implanted into the entire surface or a part of the surface of the epitaxial layer 71 by an ion doping apparatus. As shown in FIG. 5C, when ions are selectively implanted by the ion doping apparatus, a desired region of the semiconductor element is formed based on the ion implanted portion 72 into which the ions are implanted. . Further, as shown in FIG. 5C, when the ions are implanted, the surface of the epitaxial layer 71 including the ion implanted portion 72 becomes rough (the surface of the substrate 70 is damaged and the flatness is deteriorated). To do).

  Next, as shown in FIG. 5D, a flattening process is performed. This flattening process is a process of flattening the surface of the substrate 70 that has been roughened by ion implantation. In this embodiment, the surface of the epitaxial layer 71 including the ion-implanted portion 72 is planarized by heating at a high temperature under Si vapor pressure.

  Next, as shown in FIG. 6E, heat treatment is performed in a vacuum state in order to form a graphene cap (graphene layer, carbonized layer) 80 on the surface of the epitaxial layer 71. Next, as shown in FIG. 6F, with the graphene cap 80 formed, an annealing process (heating process) for activating ion dope is performed on the substrate 70. Note that the steps shown in FIGS. 6E and 6F can be performed continuously.

  After the annealing process, a process of removing the graphene cap 80 from the substrate 70 is performed as shown in FIG. In the present embodiment, a method of removing the graphene cap 80 by heating at high temperature under Si vapor pressure is adopted. In the step of removing the graphene cap 80, heating is preferably performed so that the temperature range is 1500 ° C. or higher and 2300 ° C. or lower. This is because when the temperature is lower than 1500 ° C., the epitaxial layer 71 including the ion-implanted portion 72 on the surface of the substrate 70 cannot be sufficiently etched. The reason why the temperature range is set to 2300 ° C. or lower is that the higher the heating temperature, the faster the etching rate. It is.

  By removing the graphene cap 80, the surface of the epitaxial layer 71 including the ion implanted portion 72 is exposed, and this surface becomes the surface of the semiconductor element. Further, in the step of removing the graphene cap 80 from the surface of the epitaxial layer 71 including the ion-implanted portion 72 of the substrate 70, the surface of the epitaxial layer 71 including the ion-implanted portion 72 of the substrate 70 is etched. Incidentally, the ion concentration of the epitaxial layer 71 including the ion-implanted portion 72 of the substrate 70 immediately after the implantation of ions in the step of FIG. 5C gradually increases as the distance from the surface increases, and thereafter takes a certain value. After that, it is known that the behavior decreases (FIG. 17 described later). That is, there is a possibility that the ion concentration is not sufficiently reached in the vicinity of the surface of the epitaxial layer 71 after ion implantation. However, in the manufacturing method of the present embodiment, the step of planarizing the surface of the epitaxial layer 71 including the ion implantation portion 72 of the substrate 70, the step of forming the graphene cap 80, the step of removing the graphene cap 80, Through this process, the surface of the epitaxial layer 71 including the ion-implanted portion 72 of the substrate 70 is etched and planarized, and the portion where the ion concentration has not sufficiently reached can be removed.

  As described above, the surface of the semiconductor element having flatness and sufficient electrical activity is formed through the processing from FIG. 5A to FIG. 6G.

  Next, each step will be described in detail. First, a process for forming the epitaxial layer 71 on the substrate 70 (the process of FIG. 5A) will be described. FIG. 7 is a schematic view showing a state in which a laminated body composed of the substrate 70, the silicon plate 91, and the carbon supply feed substrate 92 is accommodated in the crucible 2. FIG. 8 is a schematic diagram conceptually showing the <11-20> direction and the <1-100> direction.

  In the present embodiment, a method of forming an epitaxial layer 71 composed of a high-quality SiC single crystal layer on the surface of the substrate 70 by a metastable solvent epitaxy method (MSE method) is employed.

  The substrate 70 on which the epitaxial layer 71 is formed is composed of 4H—SiC single crystal or 6H—SiC single crystal. The surface of the substrate 70 is a (0001) Si plane or a (000-1) C plane, and the off angle in the <11-20> direction is a low off angle of 4 degrees or less. <1-100> The off angle of the direction is a low off angle of 4 degrees or less (see FIG. 8).

  In the epitaxial formation step, first, a silicon plate 91 is laminated on the surface of the substrate 70, and a laminate in which a carbon supply feed substrate 92 is further laminated on the silicon plate 91 is formed. In this state, the silicon plate 91 is held while being sandwiched between the substrate 70 and the carbon supply feed substrate 92.

  The silicon plate 91 becomes a silicon ultrathin solution layer by heat treatment described later. The thickness of the silicon plate 91 of this embodiment is set so that the thickness of the silicon ultrathin solution layer is 25 μm to 100 μm in the course of the heat treatment described later.

  The carbon supply feed substrate 92 is for supplying carbon atoms necessary for forming an epitaxial layer composed of a SiC single crystal. As the carbon supply feed substrate 92, a substrate having a chemical energy free energy higher than that of the SiC single crystal (4H—SiC single crystal or 6H—SiC single crystal) constituting the substrate 70 is used. For example, a substrate having 3C—SiC single crystal, 3C—SiC polycrystal, or a carbon nanomaterial on the surface can be used as the carbon supply feed substrate 92. The carbon supply feed substrate 92 of the present embodiment is composed of a 3C—SiC polycrystalline substrate.

  The carbon supply feed substrate 92 is configured in a cylindrical shape with a high roundness, like the substrate 70. The diameters of the end surfaces (circles) of the carbon supply feed substrate 92 and the substrate 70 are set to be the same, and the substrate 70 and the carbon supply feed substrate 92 are accurately positioned so as not to be misaligned in plan view.

  Next, as shown in FIG. 7, a laminate composed of a substrate 70, a silicon plate 91, and a carbon supply feed substrate 92 is accommodated in the crucible 2. At this time, a silicon pellet (not shown) as a silicon supply source is accommodated in the crucible 2. And the crucible 2 is heat-processed by the above-mentioned high temperature vacuum furnace 11. FIG.

  The heat treatment will be specifically described. In this heat treatment, first, the crucible 2 is placed in the preheating chamber 22 of the high temperature vacuum furnace 11 (position indicated by a chain line in FIG. 2) and preheated to about 800 ° C.

  Next, the crucible 2 in the preheating chamber 22 is moved to the main heating chamber 21 that has been heated to about 1800 ° C. in advance by driving the cylinder portion 29, and the temperature is rapidly increased. As a result, silicon evaporates from the silicon pellet, and the inside of the crucible 2 is kept at the vapor pressure of silicon. In the crucible 2 of the present embodiment, the tantalum carbide layer on the surface functions as a carbon getter. Therefore, of the silicon vapor and silicon carbide vapor in the internal space of the crucible 2, only carbon is selectively occluded in the crucible 2.

  The crucible 2 is heated in the main heating chamber 21 at a temperature of 1600 ° C. or higher and 2300 ° C. or lower. This is because if the heating temperature is less than 1600 ° C., the growth rate of single crystal epitaxial growth becomes very slow. The reason why the heating temperature is set to 2300 ° C. or lower is that the higher the heating temperature, the higher the growth rate of single crystal epitaxial growth. However, when the heating temperature exceeds 2300 ° C., there are problems of consumption and life of the heating furnace and crucible 2 material equipment. This is because it occurs. Moreover, the atmosphere in the crucible 2 is maintained at about 1 Pa or less. From the viewpoint of preventing impurities from entering the crucible 2, the silicon pressure in the crucible 2 during heating is preferably higher than the external pressure (pressure in the main heating chamber 21).

  By this heat treatment, the silicon plate 91 between the substrate 70 and the carbon supply feed substrate 92 is dissolved to form a silicon ultrathin melt layer, and this silicon ultrathin melt layer becomes a solvent (carbon in the metastable solvent epitaxy method). It functions like a moving medium. Thereby, the single crystal epitaxial growth layer can be grown on the surface of the substrate 70 by the difference in free energy of the chemical potential between the SiC layer and the material of the carbon supply feed substrate 92 without depending on the step flow growth control.

By the series of processes described above, the epitaxial layer 71 composed of a SiC single crystal (4H—SiC single crystal or 6H—SiC single crystal) that is flat at an atomic level without micropipe defects is formed on the surface of the substrate 70. Can do. In the present embodiment, the epitaxial layer 71 has impurities in the carbon supply feed substrate 92 such that the impurity concentration with nitrogen as an impurity is in the range of 10 ¹⁴ (pieces / cm ³ ) to 10 ²⁰ (pieces / cm ³ ). The amount is controlled and formed.

  Next, ions containing Al are implanted into the epitaxial layer 71 by an ion doping apparatus in order to form a p-type semiconductor region on the semiconductor element.

  Next, a planarization process after ions are implanted will be described. FIG. 9 is a schematic view showing a state where the substrate 70 on which ion implantation has been performed in the planarization step is accommodated in the crucible 2.

  In this embodiment, the planarization process is performed by heating at a high temperature under Si vapor pressure. This heat treatment is preferably performed in a temperature range of 1500 ° C. or higher and 2300 ° C. or lower.

  Specifically, the heat treatment includes a preheating step and a main heating step. In the preheating step, the crucible 2 containing the substrate 70 is heated at a temperature of 800 ° C. or higher in the preheating chamber. In the main heating step, the crucible 2 is moved from the preheating chamber to the main heating chamber heated in advance at a predetermined temperature. In this state, the substrate 70 is heated at a temperature of 1500 ° C. to 2300 ° C. for a predetermined time. As described above, the substrate 70 is accommodated in the crucible 2 and preheated in advance, and the substrate 70 is moved from the preheating chamber to the main heating chamber, whereby the substrate 70 can be rapidly heated to perform the heat treatment. .

By this processing, the surface portion roughened by the above-described ion implantation is flattened. That is, by heating at high temperature under Si vapor pressure, SiC on the surface of the epitaxial layer 71 becomes Si ₂ C or SiC ₂ and sublimates, and Si in the Si atmosphere combines with C on the surface of the epitaxial layer, Organization takes place and is flattened. The reason for controlling the heating temperature within the temperature range of 1500 ° C. to 2300 ° C. is as follows. That is, when the heating temperature is less than 1500 ° C., the above-described self-organization hardly occurs. The reason why the heating temperature is set to 2300 ° C. or lower is that self-organization is more likely to occur as the heating temperature is higher. Because.

  Next, the relationship between the heating temperature and flattening will be described with reference to FIGS. 10, 11, and 12.

  FIG. 10 is a graph showing the relationship between the vapor phase annealing temperature under Si vapor pressure and the average surface roughness. In the graph of FIG. 10, in single crystal SiC (4H—SiC), the relationship of the average roughness (nm) to the temperature (annealing temperature) of the heat treatment of the (0001) Si surface and the heating of the (000-1) C surface. The relationship of the average roughness (nm) to the processing temperature is shown. As shown in the graph of FIG. 10, when the heat treatment was performed at a high temperature of 1500 ° C. or higher, the average roughness was within 1.0 nm. From this, it can be understood that the planarization of the surface of the epitaxial layer 71 proceeds efficiently under a high temperature environment. In addition, since the step is formed on the surface of the substrate 70 in such a manner that the planarization process is self-organized, the surface damage caused in the ion implantation process can be repaired.

  FIG. 11 is a graph showing the relationship between the vapor-phase annealing temperature under Si vapor pressure and the step height formed on the substrate surface. (A) in FIG. 11 is a photomicrograph of the surface of the substrate 70 terminated at the full unit height. Further, (b) in FIG. 11 is a micrograph of the surface of the substrate 70 terminated at the half unit height. FIG. 12 is a schematic diagram for explaining the molecular arrangement and period of 4H—SiC single crystal and 6H—SiC. As shown in FIG. 11, in the high temperature region, it can be seen that the end of the step at the full unit height and the half unit height is advanced.

  Here, the half unit height and the full unit height will be described with reference to FIG. FIG. 12 is a schematic diagram for explaining the molecular arrangement and period of 4H—SiC single crystal and 6H—SiC. As shown in FIG. 12, the “full unit height” refers to the height in the stacking direction for one cycle in which SiC monomolecular layers composed of Si and C are stacked in the stacking direction. Therefore, a full unit height step means a 1.0 nm step in the case of 4H-SiC. “Half unit height” refers to the height in the stacking direction at the half of the one cycle. Therefore, the half unit height step means 0.5 nm in the case of 4H—SiC. In the case of 6H-SiC, the full unit height step means a 1.5 nm step, and the half unit height means a 0.75 nm step.

  As can be seen from the experimental results (graphs) shown in FIGS. 10 and 11, the molecular level (full unit height) that is difficult to mechanically polish or etch by heating at high temperature for a predetermined time under Si vapor pressure. Alternatively, flattening at half unit height) can be performed.

  Next, a graphene cap forming process and a removing process will be described. FIG. 13 is a plan view conceptually showing the relationship between the SiC crystal lattice and the graphene crystal lattice. FIG. 14 is a cross-sectional view conceptually showing the relationship between the SiC crystal lattice and the graphene crystal lattice.

In the graphene formation step, the substrate 70 that has been subjected to the planarization process is placed in a vacuum environment (under a reduced pressure of 10 ⁻⁴ Pa or less) and heated at a temperature of 1500 ° C. to 2300 ° C. for a predetermined time. By this heating, Si on the surface of the epitaxial layer 71 is sublimated, and the graphene cap 80 is formed on the surface of the epitaxial layer 71 by the remaining C. In the manufacturing method of the present embodiment, the graphene cap 80 can be formed on the surface of the substrate 70 by performing a planarization process (see FIG. 5D) on the substrate 70. Moreover, it is preferable that the heating temperature in a graphene formation process is the temperature range of 1500 degreeC or more and 2300 degrees C or less. This is because when the heating temperature is less than 1500 ° C., the sublimation of Si atoms is insufficient and the graphene layer (graphene cap 80) is hardly formed. The reason for setting the heating temperature to 2300 ° C. or lower is that although the sublimation of Si atoms accelerates and the graphene layer is easily formed as the heating temperature increases, the material equipment for the heating furnace and the crucible 2 exceeds 2300 ° C. This is because there is a problem of consumption and lifetime.

  As shown in FIG. 13, the graphene cap 80 is formed so that the graphene crystal lattice overlaps with the SiC crystal lattice. As shown in FIG. 14, the graphene cap 80 is composed of a plurality of layers. In the case of the (0001) Si surface, an interface layer (interface layer) is formed between (boundary) between the graphene layer and the SiC layer (surface of the epitaxial layer), and a plurality of graphene layers are laminated on this interface layer. It has become a form. Here, the carbon molecular arrangement distance of the SiC crystal lattice in the plane can be calculated by the product of the SiC lattice constant and the carbon atom reconstruction period of the interface layer (interface layer). That is, SiC lattice constant (3.073Å) × carbon atom reconstruction period (6√3) = carbon molecule arrangement distance of SiC crystal lattice (31.935Å). On the other hand, the carbon molecular arrangement distance of the graphene crystal lattice can be calculated by the product of the graphene lattice constant and the carbon atom reconstruction period of graphene. That is, graphene lattice constant (2.456Å) × carbon atom reconstruction period (13) = carbon molecule arrangement distance of graphene crystal lattice (31.928Å). The carbon molecular arrangement distance (31.935 Å) of the SiC crystal lattice and the carbon molecular arrangement distance (31.928 ９) of the graphene crystal lattice are very close to each other. From this result, the surface of the SiC single crystal is observed. It can be seen that the graphene layer can be formed stably.

  FIG. 15 is a graph showing the relationship between the graphene coverage on the substrate surface and the vacuum heating temperature. As shown in FIG. 15, in order to form the graphene cap 80 so as to cover the entire surface of the substrate 70, it can be understood that heating may be performed at a temperature of 1800 ° C. or higher for 30 minutes. At such a high temperature of 1800 ° C. or higher, ion activation can be performed simultaneously with the formation of the graphene cap 80, but ion activation can be sufficiently performed by adding a heating time.

  In the ion activation process (ion doping activation process), the substrate 70 on which the graphene cap 80 is formed is heated in a high temperature environment in a temperature range of 1600 ° C. or higher and lower than 2300 ° C. to activate ions. The reason why the temperature is set to 1600 ° C. or higher is that if the heating temperature is low, ion activation may be insufficient. The reason why the temperature is set to 2300 ° C. or lower is that ions are more easily activated as the heating temperature is higher, but if the temperature exceeds 2300 ° C., problems such as consumption and life of the material equipment such as the heating furnace and the crucible 2 occur. .

  Next, the state of the substrate 70 from when the graphene cap 80 is formed to when it is removed will be described with reference to FIG. FIG. 16 is a schematic diagram and a micrograph showing the state of the substrate in stages. FIG. 16A shows a schematic diagram showing a flattened substrate and a photomicrograph showing the state of the surface of the substrate. The planarization process of the substrate 70 in FIG. 16A corresponds to the planarization process of the substrate 70 in FIG. FIG. 16B shows a schematic diagram showing the substrate 70 on which the graphene cap 80 is formed, and a micrograph showing the state of the surface of the substrate. The graphene cap forming step in FIG. 16B corresponds to the graphene cap forming step in FIG. FIG. 16C shows a schematic diagram showing the substrate from which the graphene cap 80 has been removed, and a micrograph showing the state of the surface of the substrate. The graphene cap removal process in FIG. 16C corresponds to the graphene cap removal process in FIG.

  From the photograph of FIG. 16A, it can be seen that the surface of the substrate 70 is terminated at a molecular level step by heat-treating the substrate under Si vapor pressure. Further, from the photograph of FIG. 16B, it can be seen that the surface of the substrate 70 is carbonized and the graphene cap 80 is formed by performing the vacuum heat treatment in a state where the surface of the substrate 70 is flattened. Then, from the photograph of FIG. 16C, the graphene cap 80 is removed by performing vapor phase annealing (heating treatment in a high temperature environment) under Si vapor pressure on the substrate on which the graphene cap is formed, It can be seen that the surface terminates in regular steps.

  In the step of FIG. 16C, the surface of the substrate 70 (epitaxial layer 71) is planarized and etched by removing the graphene cap 80.

  Next, the etching of the surface of the substrate 70 that occurs in the graphene cap removal step will be described in detail. FIG. 17 is a schematic diagram conceptually showing the relationship between the concentration of ions implanted into the substrate 70 and the ion implantation depth.

  As shown in FIG. 17, it can be seen that the implanted ion concentration is insufficient in a certain range (0 nm to 50 nm) from the surface of the substrate 70, and there is a sufficient ion concentration in the deep range from 50 nm to 500 nm. As described above, in the present embodiment, a part of the surface where the ion concentration distribution is not constant (the lacking part in FIG. 17) is etched when the graphene cap 80 is removed (right side in FIG. 17). reference). By this etching, a portion where the ion concentration is insufficient and a portion where the ion concentration is not uniform is removed. That is, a region where the ion concentration from the surface to 50 nm is insufficient is removed by performing the steps of planarization, graphene cap formation, and graphene cap removal. By removing this region, a region having a sufficient ion concentration becomes the surface, and it is possible to make the ion concentration at the location where the ions are implanted constant on the surface of the semiconductor element (the surface of the epitaxial layer 71). Become.

  FIG. 18 is a graph showing the relationship between the vapor phase annealing temperature under Si vapor pressure and the etching rate. As can be seen from FIG. 18, the desired etching rate can be controlled by changing the processing temperature and the silicon vapor pressure.

  As described above, the semiconductor element manufacturing method of this embodiment includes the ion implantation step (FIG. 5B), the graphene layer formation step (FIG. 6E), and the ion activation step (FIG. 6). (F)) and a graphene layer removing step (FIG. 6G). In the ion implantation step, ions are implanted into the substrate 70. In the graphene layer forming step, the graphene cap 80 is formed on the surface of the substrate 70 into which ions are implanted in the ion implantation step. In the ion activation step (ion doping activation step), the substrate 70 on which the graphene cap 80 is formed is heated to activate ions. In the graphene layer removal step, the graphene cap 80 is removed by heating the substrate 70 on which the ion activation step has been performed under a Si vapor pressure with a temperature range of 1500 ° C. to 2300 ° C.

  Thereby, by forming the graphene cap 80 on the surface of the epitaxial layer 71, it is possible to effectively suppress sublimation of Si and SiC in the heat treatment for ion activation. Therefore, it is possible to effectively prevent deterioration in flatness caused by sublimation of Si and SiC from the surface of the substrate 70. In addition, since the graphene cap 80 is removed after the sublimation of Si and SiC in the ion activation step is suppressed by the graphene cap 80, the SiC substrate 70 having a good surface flatness can be obtained.

  Further, in the method of manufacturing a semiconductor device of this embodiment, an epitaxial layer forming step of forming a single crystal SiC epitaxial layer 71 on the surface of the substrate 70 (SiC layer) before the ion implantation step (FIG. 5A). )including. In the ion implantation step, ions are implanted into the epitaxial layer 71 formed on the surface of the substrate 70.

  Thereby, a semiconductor element can be manufactured using the epitaxial layer 71 grown on the surface of the substrate 70.

  Further, in the method of manufacturing a semiconductor device of this embodiment, the substrate 70 into which ions are implanted in the ion implantation process is heated at a molecular level by heating the substrate 70 under a Si vapor pressure with a temperature range of 1500 ° C. to 2300 ° C. Including a step (FIG. 5D).

  Thereby, the surface of the epitaxial layer 71 (substrate 70) once roughened in the ion implantation step can be planarized, and a graphene layer (graphene cap 80) can be formed in that state. For this reason, the graphene layer can be formed flat at the molecular level, and the surface of the epitaxial layer 71 (substrate 70) can be densely protected to effectively suppress sublimation of Si and SiC. Thereby, since the deterioration of the flatness of the substrate surface in the ion activation step can be prevented, the flatness of the surface after the graphene layer removing step can be further improved.

  In the semiconductor element manufacturing method of the present embodiment, the substrate 70 is heated at a temperature range of 1600 ° C. or higher and 2300 ° C. or lower in the ion activation step.

  Thereby, ion activation can fully be performed.

  In the semiconductor element manufacturing method of the present embodiment, in the graphene layer removing step, the graphene cap 80 is removed, and the surface of the epitaxial layer 71 (substrate 70) is planarized and etched at the molecular level. .

  Thereby, in the graphene layer removal step, the surface portion that may not have reached a sufficient ion concentration is removed, and the portion that has reached a sufficient ion concentration is exposed to the surface. In this manner, a semiconductor element having a surface with good flatness and ion concentration can be obtained through the graphene layer removal step.

  In the semiconductor element manufacturing method of the present embodiment, in the graphene layer forming step, the substrate 70 is heated in a vacuum state in which the temperature range is 1500 ° C. or more and 2300 ° C. or less to form the graphene cap 80 on the surface of the epitaxial layer 71. Form.

  Thereby, about two graphene layers are densely formed on the surface of the epitaxial layer 71 via the interface layer (interface layer) (see FIG. 14), and the graphene cap 80 effectively sublimates Si and SiC. Can be suppressed.

In the method for manufacturing a semiconductor device of this embodiment, the graphene cap 80 is formed in a vacuum state under a reduced pressure of 10 ⁻⁴ Pa or less in the graphene layer forming step.

  Thereby, the graphene cap 80 can be formed efficiently.

  Moreover, in the method for manufacturing a semiconductor device of this embodiment, the substrate 70 made of SiC is made of 4H—SiC single crystal or 6H—SiC single crystal.

  Thereby, the epitaxial layer 71 made of single crystal SiC can be efficiently formed on the surface of the substrate 70.

  In the method for manufacturing a semiconductor device of this embodiment, the surface of the substrate 70 made of SiC is a (0001) Si surface.

  Thereby, the epitaxial layer 71 composed of single crystal SiC can be efficiently formed on the surface of the substrate 70.

  In the method for manufacturing a semiconductor device of this embodiment, the surface of the substrate 70 made of SiC is a just surface or a surface having an off angle of 8 degrees or less in the <11-20> direction.

  In the method for manufacturing a semiconductor device of this embodiment, the surface of the substrate 70 made of SiC is a just surface or a surface having an off angle of 8 degrees or less in the <1-100> direction.

  Further, in the method of manufacturing a semiconductor device of the present embodiment, the surface of the substrate 70 made of SiC has a full unit height that is one cycle in the stacking direction of SiC molecules or a half unit that is a half cycle. It ends with a step consisting of height.

  As described above, since the surface of the substrate 70 on which the epitaxial layer 71 is formed has a high flatness, the flatness of the epitaxial layer 71 can be improved, and a higher quality semiconductor device can be manufactured.

  Although the embodiment of the present invention has been described above, the above configuration can be further modified as follows.

  In the above embodiment, the graphene cap 80 made of graphene is formed as a carbon layer in the step of FIG. 6E. However, the carbon layer other than the graphene cap 80 is formed in the step of FIG. It is also possible to change the process to be performed. FIG. 19A is a photomicrograph showing the state of the surface of the substrate 70 on which a carbon film (carbon layer) that is not graphene is formed. FIG. 19B is a photomicrograph showing a cross-sectional state of the substrate 70 on which the carbon film (carbon film in FIG. 19A) is formed.

  As shown in FIG. 19, sublimation of SiC and Si from the epitaxial layer 71 can also be prevented by the carbon thin film by forming a carbon film in the form of a thin film on the surface of the epitaxial layer 71. As a method of forming the carbon thin film on the epitaxial layer 71, for example, a known technique such as a chemical vapor deposition (CVD) method, an organic resist method, or an electron cyclotron resonance sputtering method can be employed. . This also makes it possible to efficiently form a carbon film on the surface of the epitaxial layer.

  In the above embodiment, in the step of forming the epitaxial layer 71 in FIG. 5A, an n-type epitaxial layer is formed using nitrogen as an impurity. However, P (phosphorus) may be used, and Al or B may be used. A p-type epitaxial layer may be formed by using as an impurity.

  In the above embodiment, the metastable solvent epitaxy method is used in the step of forming the epitaxial layer 71 of FIG. 5A (see FIG. 7), but the epitaxial layer 71 may be formed by other methods. it can. For example, a CVD method in which an epitaxial layer is formed by step flow control using the off angle of the surface of the substrate 70 can be employed in the epitaxial layer forming step. In this case, the surface of the substrate 70 has an off angle in the <11-20> direction in the range of 4 to 8 degrees, or an off angle in the <1-100> direction in the range of 4 to 8 degrees. It is preferable. Further, in the step flow control, it is preferable to heat in a temperature range of 1200 ° C. to 1600 ° C. for a predetermined time. Thus, an epitaxial layer can also be formed by utilizing the high off angle of the surface of the substrate 70 made of SiC.

  Moreover, it can change from the said embodiment so that an epitaxial layer formation process (FIG.5 (a)) may be abbreviate | omitted and ion may be implanted into the board | substrate 70 and a semiconductor element may be manufactured.

  In addition, the graphene layer removing step (FIG. 6G) for removing the graphene cap 80 may be omitted, and the semiconductor device having the graphene cap 80 formed on the surface may be manufactured. In this case, since the surface of the substrate is a high-quality graphene semiconductor, a semiconductor element having excellent high-speed conduction performance can be manufactured.

  In the above embodiment, Al is implanted in the ion implantation step of FIG. 5B. However, B may be used, or nitrogen or P (phosphorus) may be implanted when an n-type region is formed.

2 crucible (container)
70 Substrate 71 Epitaxial layer 72 Ion implanted portion 80 Graphene cap

Claims (10)

In a method for manufacturing a semiconductor element using a substrate having at least a surface composed of a SiC layer,
An ion implantation step of implanting ions into the substrate;
A planarization step of planarizing at a molecular level by heating the substrate into which ions have been implanted in the ion implantation step under a Si vapor pressure having a temperature range of 1500 ° C. to 2300 ° C .;
By the substrate temperature range is heated in a vacuum of 1500 ° C. or higher 2300 ° C. or less, and the graphene layer forming step of forming a graphene layer on the surface of the substrate ion in the ion implantation step is injected,
An ion activation step of activating ions by heating the substrate on which the graphene layer is formed;
A graphene layer removing step of removing the graphene layer at a temperature range is heated at a Si vapor pressure of 1500 ° C. or higher 2300 ° C. or less the substrate on which the ion activation process has been performed,
Unrealized, by passing through the planarization step and the graphene layer removing step, a method of manufacturing a semiconductor device characterized by areas ion concentration is insufficient to remove the. A method of manufacturing a semiconductor device according to claim 1,
Before the ion implantation step, including an epitaxial layer forming step of forming an epitaxial layer of single crystal SiC on the surface of the SiC layer of the substrate by a metastable solvent epitaxy method ,
In the ion implantation step, ions are implanted into an epitaxial layer formed on the surface of the substrate. A method of manufacturing a semiconductor device according to claim 1 or 2 ,
In the ion activation step, the substrate is heated at a temperature range of 1600 ° C. to 2300 ° C. A method for manufacturing a semiconductor device according to any one of claims 1 to 3 ,
In the graphene layer forming step, a method of manufacturing a semiconductor device characterized by in the vacuum of under a reduced pressure of not more than 10 ^-4 Pa to form the graphene layer. A method of manufacturing a semiconductor device according to any one of claims 1 to 4 ,
The method of manufacturing a semiconductor device, wherein the SiC layer is made of 4H-SiC single crystal or 6H-SiC single crystal. A method of manufacturing a semiconductor device according to claim 5 ,
The method of manufacturing a semiconductor device, wherein the surface of the SiC layer is a (0001) Si plane or a (000-1) C plane. A method of manufacturing a semiconductor device according to claim 5 or 6 ,
The surface of the SiC layer is a just surface or a surface having an off angle in the <11-20> direction of 8 degrees or less. A method for manufacturing a semiconductor device according to any one of claims 5 to 7 ,
The surface of the SiC layer is a just surface or a surface having an off angle of 8 degrees or less in the <1-100> direction. A method of manufacturing a semiconductor device according to any one of claims 5 to 8 ,
The surface of the SiC layer terminates in a step consisting of a height of a full unit corresponding to one cycle in the stacking direction of SiC molecules or a height of a half unit corresponding to a half cycle. Production method. A method of manufacturing a semiconductor device according to any one of claims 1 to 9 ,
A method of manufacturing a semiconductor device, wherein the semiconductor device with the graphene layer is obtained by omitting the graphene layer removing step.