JP5558189B2 - Infrared sensor and manufacturing method thereof - Google Patents

Description

  The present invention relates to a sensor and a manufacturing method thereof.

  As conventional thermopile type infrared sensors, those shown in the following Patent Documents 1 to 3 are known. In such an infrared sensor, a thermocouple is formed by the adjacent polysilicon and aluminum, and the incident infrared ray is detected by an infrared detection unit using the thermocouple.

  The thermopile is a thermopile arranged in series in a small area. A thermocouple is a temperature sensor that uses the principle of the “Seebeck effect” in which a circuit is made of two types of metal and the two junctions are kept at different temperatures, a thermoelectromotive force is generated and current flows. A thermocouple measures the thermoelectromotive force between a temperature measuring junction (hot junction) and a reference junction (cold junction).

  The infrared sensor shown in Patent Document 1 is an example in which a thermocouple made of a p-type semiconductor and an n-type semiconductor is formed on a cantilever. These measure the amount of infrared rays incident on the infrared sensor from the electromotive force generated by the temperature difference between the hot and cold junctions of the thermocouple due to the Seebeck effect. Sensitivity is realized. An infrared sensor provided with an infrared filter is described in Patent Document 3. Patent Document 3 shows an example in which an infrared sensor is formed on an insulating substrate.

Japanese Patent No. 2663612 JP-A-6-249708 JP 2001-174324 A

  However, when a through hole for output extraction is formed in a semiconductor substrate and a silicon substrate is attached to this, a space for improving temperature detection characteristics is required between the infrared detector and the silicon substrate. Due to the pressure difference between the sensor and the outside of the infrared sensor, there is a problem that the insulating film or the like formed in the through hole deteriorates or breaks, and the characteristics deteriorate.

The present invention has been made in view of such problems, and an object thereof is to provide an infrared sensor capable of improving characteristics and a method for manufacturing the same.

The invention according to claim 1 is the infrared sensor, wherein the semiconductor substrate on which the infrared detecting portion is formed, the infrared transmitting substrate facing the semiconductor substrate, and the semiconductor substrate and the infrared transmitting substrate are partially interposed. And an adhesive layer that provides a space between these substrates,
The semiconductor substrate has a through-hole in which the terminal and the adhesive layer are located on an axis thereof in order to take out an electric signal from the infrared detection unit via a terminal at a position facing the adhesive layer , On the inner wall surface of the through hole, an insulating film is formed in contact with a thin film made of an insulating layer provided on the semiconductor substrate at the bottom of the through hole. In the opening, a contact electrode connected to the infrared detection unit is provided in a contact hole located at the bottom of the through hole in the insulating film and the thin film, and is connected to the terminal. The through hole is a pyramid. It has a trapezoidal shape, and the diameter of the through hole is reduced from the back surface side to the front surface side of the semiconductor substrate, bumps are disposed in the through holes, and the outer surface of the bumps is formed on the insulating film. In contact There is a gap between the outer surface of the bump opposite to the contact electrode from the contact position and the insulating film, and the bump has a portion protruding from the through hole of the semiconductor substrate. It is characterized by that.
According to a second aspect of the present invention, in the infrared sensor, the semiconductor substrate on which the infrared detection portion is formed, the infrared transmission substrate facing the semiconductor substrate, and the semiconductor substrate and the infrared transmission substrate are partially interposed. An adhesive layer that provides a space between the substrates, and the semiconductor substrate takes out an electrical signal from the infrared detection unit through a terminal at a position facing the adhesive layer, on its axis, A through hole in which the terminal and the adhesive layer are located, and the inner wall surface of the through hole is in contact with a thin film made of an insulating layer provided on the semiconductor substrate at the bottom of the through hole; It is an insulating film that is formed, con the said adhesive layer side opening of the through hole, a contact electrode connected to the infrared detecting part is positioned in the bottom portion of the insulating film and the through hole in the thin film Provided within Kutohoru, connected to the terminals, the through hole has a truncated pyramid shape, the diameter of the through hole is smaller toward the surface side from the back side of the semiconductor substrate, said through A bump is located in the hole, and there is a gap at least partially between the outer surface of the bump and the inner surface of the through hole, and the bump has a portion protruding from the through hole of the semiconductor substrate. It is characterized by.
According to a third aspect of the present invention, the bump contacts the inner surface of the through hole, and between the outer surface of the bump opposite to the contact electrode from the contact position and the inner surface of the through hole. It is characterized by a gap.

The invention according to claim 4 is characterized in that the aspect ratio (hole depth / opening diameter) of the hole depth to the opening diameter of the through hole is 1 or less.

The invention of claim 5, wherein the infrared detector is characterized by being formed on the semiconductor substrate to form a membrane structure.

According to a sixth aspect of the present invention, in the above-described sensor manufacturing method, an adhesive layer is provided at least one of the semiconductor substrate and the infrared transmission substrate so as to provide a space between the semiconductor substrate and the infrared transmission substrate. And after the step of bonding the infrared transmitting substrate to the semiconductor substrate through the adhesive layer and the step of bonding the infrared transmitting substrate, the semiconductor substrate is opposite to the infrared transmitting substrate. After the step of thinning the semiconductor substrate by mechanically and chemically polishing the side surface, and the bonding step of the infrared transmission substrate, from the opposite side of the semiconductor substrate to the infrared transmission substrate, And a step of forming a through hole in the semiconductor substrate.

According to the infrared sensor and the manufacturing method thereof of the present invention, the characteristics can be improved, and the productivity can be improved at low cost.

It is a side view of the infrared sensor which concerns on embodiment. It is a front view (plan view which remove | excluded the infrared rays transmissive board | substrate from the infrared sensor) of the infrared sensor which concerns on embodiment. It is a bottom view of an infrared sensor. It is IV-IV arrow sectional drawing of the infrared sensor in FIG. 4 is an enlarged view of a peripheral portion of a through hole P. FIG. It is a figure for demonstrating the manufacturing process of an infrared detection part. It is a figure for demonstrating the attachment process of the infrared rays transmissive board | substrate FL. It is a figure for demonstrating the formation process of the through-hole P. FIG. It is a figure for demonstrating the attachment process of a bump. It is sectional drawing of the infrared sensor which has the through-hole P formed by etching substantially perpendicularly with respect to the substrate back surface. It is a top view of the infrared sensor which concerns on another embodiment which abbreviate | omits and shows the infrared rays transmissive board | substrate FL from an infrared sensor. It is XII-XII arrow sectional drawing of the infrared sensor shown in FIG. It is sectional drawing of the infrared sensor provided with two or more infrared detection parts.

  Embodiments according to the present invention will be described below with reference to the accompanying drawings. However, the same reference numerals are given to the same elements, and duplicate descriptions are omitted. In addition, the ratio of dimensions of each component, particularly the thickness of each layer, and the like may be different from reality for emphasis for convenience of explanation.

  FIG. 1 is a side view of an infrared sensor according to an embodiment. FIG. 2 is a plan view of the infrared sensor with the infrared transmitting substrate removed. FIG. 3 is a bottom view of the infrared sensor. 4 is a cross-sectional view of the infrared sensor in FIG. 2 taken along arrows IV-IV.

  A supporting member having a membrane structure includes a semiconductor substrate 1 having a thin plate portion having a hollow portion 2 and a thin film (thermal insulating film) 3 that supports the semiconductor substrate 1. The semiconductor substrate 1 is made of a silicon substrate. The back side of the infrared sensor is closed by the semiconductor substrate 1 and has etching holes 13 at four locations on the surface of the passivation film 7. That is, the hollow portion 2 is formed in the lower part of the thin film 3. Since this infrared sensor has a structure in which the back side is closed by the semiconductor substrate 1, it is easy to die-bond to a support member such as a lead frame or a circuit board, and the mechanical strength is increased.

The thin film 3 may be a SiN single layer, a SiO ₂ single layer, or a multilayer film including any one of SiN, SiO ₂ , PSG, and BPSG, and has a thickness of 0.1 to 5 μm.

On the thin film 3, an aluminum film 6 is laminated via a polysilicon film 4 doped with n-type or p-type impurities of 10 ¹⁷ to 10 ²⁰ cm ⁻³ and an SiO ₂ film 5 serving as an insulating film. The polysilicon film 4 and the aluminum film 6 are connected by the opening hole of the SiO ₂ film 5 to form a thermocouple. The exposed surfaces of the thin film 3 and the thermocouple are covered with a passivation film 7 made of SiN, and an infrared absorption film 8 is formed on the passivation film 7 above the hollow portion 2. In the thermal infrared sensor, the infrared absorption film 8 is provided to capture infrared rays as thermal energy.

In place of the SiO ₂ film 5, a single layer such as PSG, BPSG, SiN or a laminated film made of these insulating layers may be used. The passivation film 7 may be a single layer such as SiO ₂ , PSG, BPSG, polyimide film or the like. A laminated insulating film made of them may be used. Also, a blackening resin is used for the infrared absorption film 8, and a resin in which a black filler such as a carbon filler is mixed with the blackening resin (epoxy, silicone, acrylic, urethane, polyimide, etc.) Alternatively, a black resist or the like may be used.

  As shown in FIG. 2, the long laminated structure of the polysilicon film 4 and the aluminum film 6 is formed so as to extend from the upper outer edge of the semiconductor substrate 1 to the upper part of the central hollow portion 2. The shape of the hollow portion 2 is a rectangle (square or rectangular), and each stacked structure extends along four directions perpendicular to the four sides of the hollow portion 2.

The polysilicon film 4 and the aluminum film 6 are laminated on the hollow portion 2, and the width of the aluminum film 6 is narrower than the width of the polysilicon film 4. The laminated polysilicon film 4 and the aluminum film 6 are connected to each other through the opening hole of the SiO ₂ film 5 in the region where the infrared absorption film 8 is formed, and a hot contact 11 is formed. Further, the adjacent polysilicon film 4 and the aluminum film 6 are connected to each other in the opening hole portion of the SiO ₂ film 5 on the semiconductor substrate 1 to form a cold junction 12. These thermocouples are connected in series, and the electromotive force generated by the Seebeck effect is taken out by the terminal 10.

  Since this laminated structure is a thermocouple, it functions as thermoelectric infrared detectors (thermopiles) 4 and 6. That is, an infrared detector is formed on the semiconductor substrate 1. An infrared transmitting substrate FL made of a silicon substrate is opposed to the semiconductor substrate 1. The infrared transmission substrate FL functions as an infrared transmission filter. Alternatively, by adding an antireflection film to one or both surfaces of the infrared transmitting substrate, it is possible to improve the transmittance or to form a bandpass filter that transmits only a necessary wavelength.

  An adhesive layer AD is partially interposed between the semiconductor substrate (first silicon substrate) 1 and the infrared transmission substrate (second silicon substrate) FL. The adhesive layer AD provides a space between the semiconductor substrate 1 and the infrared transmission substrate FL. The thickness of the adhesive layer AD is set to be higher than the upper surface of the infrared absorption film 8, and between the infrared absorption film 8 and the infrared detection unit and the surface of the infrared transmission substrate FL facing the semiconductor substrate. There is a gap.

  The adhesive layer AD of this example is a layer that can be anodic bonded to silicon such as Pyrex (registered trademark) glass. At least one of the semiconductor substrate (first silicon substrate) 1 and the infrared transmitting substrate (second silicon substrate) FL and the adhesive layer AD are anodically bonded. The inner surface facing the hollow portion 2 of the infrared transmission substrate FL may form a concave portion. In this case, the periphery of the inner surface of the infrared transmission substrate FL forms a convex portion, and the convex portion and the adhesive layer AD Will be bonded. The adhesive layer AD is provided on the outer edge portion of the semiconductor substrate 1 and constitutes a rectangular annular frame portion. Therefore, the adhesive layer AD is interposed between the outer edge portion of the semiconductor substrate 1 and the outer edge portion of the infrared transmission substrate FL, and seals the internal space of the infrared sensor from the outside air. This internal space is preferably set in a vacuum state. By making the internal space between the infrared transmitting substrate and the semiconductor substrate into a vacuum, the infrared rays (heat) incident on the infrared absorbing film of the infrared detecting portion formed on the semiconductor substrate can be released to the space side by convection. Therefore, detection with higher sensitivity is possible.

The adhesive layer AD is preferably made of, for example, borosilicate glass containing an alkali metal such as Corning # 7740. This is because the thermal expansion coefficient of this glass is 3.4 × 10 ^−6, which is close to the thermal expansion coefficient of silicon (= 3.6 × 10 ⁻⁶ ). That is, in this case, the thermal stress due to the difference in the thermal expansion coefficient in the manufacturing process is minimized, and the stress is difficult to be applied to a portion having a low mechanical strength such as a hollow portion.

  For bonding the adhesive layer AD, an anodic bonding apparatus is used to anodic bond the semiconductor substrate and the adhesive layer AD. The anodic bonding is performed at a low temperature of 400 ° C. or lower. At the time of anodic bonding, a voltage of about 250 to 800 V is applied between the semiconductor substrate 1 and the infrared transmitting substrate FL. However, since the temperature at the time of anodic bonding is relatively low, the above-described thermal stress can also be suppressed. . By performing anodic bonding in a vacuum device, the internal space of the infrared sensor can be sealed in a vacuum state.

  Further, if anodic bonding is performed in an inert gas atmosphere such as nitrogen or xenon, the inner space of the infrared sensor can be sealed in a state filled with an inert gas such as nitrogen, xenon, krypton, or argon. The internal space between the infrared transmitting substrate and the semiconductor substrate is filled with nitrogen or xenon and sealed to prevent the infrared detector, membrane structure, and infrared absorbing film from coming into contact with oxygen. It can be. Furthermore, the generation of convection can be made difficult by filling a gas having a low thermal conductivity such as xenon, krypton, and argon at a low pressure of, for example, 10 to 100 mmHg. The escape of heat is suppressed, and detection with higher sensitivity becomes possible.

  In vacuum sealing, a getter material may be provided in the internal space between the semiconductor substrate 1 and the infrared transmission substrate FL. Thereby, the pressure in the internal space can be maintained in a vacuum for a long period of time, and the stability of the infrared sensor is improved. As the getter material, a material mainly composed of barium, titanium, zirconium, or the like can be used.

  When the infrared transmitting substrate FL is used together with the adhesive layer AD, there is an advantage that the thickness of the semiconductor substrate 1 can be reduced because the mechanical strength of the infrared sensor is increased. That is, after bonding the infrared transmitting substrate FL, the back surface of the semiconductor substrate 1 is mechanically and chemically polished to reduce the thickness, and the aspect ratio in the depth direction of the through hole P can be reduced. In the thinning step, dry etching or wet etching can be used in addition to mechanical polishing. In addition, when performing the process on the back side, the process is performed with the back side facing upward.

  The reduction of the aspect ratio due to the thin plate is very useful, can reduce the formation time of the through hole P, and can easily form a good quality insulating film Pi on the inner wall surface of the through hole P. . That is, when the insulating film Pi is formed on the inner wall surface of the through-hole P, when the depth of the through-hole P is shallow, a high-quality insulating film Pi with good coverage can be formed by plasma CVD or sputtering. become.

In other words, by using the adhesive layer AD and the infrared transmitting substrate FL, the insulating film Pi formed on the inner wall surface of the through hole P can be manufactured satisfactorily. The improvement of characteristics is expected. The advantages of thinning are summarized below.
-Since the depth of the through-hole P becomes shallow, the terminal (electrode pad) 10 and the contact electrode CE can be miniaturized and formed at a narrow interval.
-Since the area of the terminal 10 can be reduced, the area of the infrared detectors 4 and 6 can be relatively increased, and the detection sensitivity can be improved.
-The etching time at the time of forming the through-hole P becomes short.
-Since the depth of the through-hole P is shallow, the coverage of the insulating film Pi can be improved.
-Since the covering property of the insulating film Pi becomes high, the probability of occurrence of a short circuit between the bump B and the semiconductor substrate 1 can be reduced.
Since the depth of the through hole P is shallow, it is easy to apply the photoresist when forming the contact electrode CE, and the amount of exposure light at the bottom of the through hole P in the photolithography process is also reduced.
-Since it is not necessary to form a long wiring such as a so-called through wiring in the through hole P, the yield is improved.

  As described above, the infrared detectors 4 and 6 are electrically connected in series with different materials (aluminum, polysilicon) that generate thermoelectromotive force. Terminals (pads) 10 at both ends of the series connection circuit are formed on the thin film 3 of the semiconductor substrate 1. On the other hand, the semiconductor substrate 1 has a through hole P for taking out the output of the infrared detection unit from the terminal 10 at a position facing the adhesive layer AD. That is, the outer edge of the semiconductor substrate 1, the terminal 10, the adhesive layer AD, and the outer edge of the infrared transmitting substrate FL are located on the axis of the through hole P.

  The terminal 10 is located at two corners of the semiconductor substrate 1 having a rectangular planar shape. Dummy terminals 10 'are provided at the remaining corners to improve the mounting stability of the infrared sensor.

  The through hole P has a truncated pyramid shape, and a bump B having a shape close to a sphere is disposed therein. The diameter of the through hole P decreases from the back surface side to the front surface side of the semiconductor substrate 1 and is tapered. In this example, one bump B may be arranged in one through hole P, only one of the opening diameters is set to be much longer than the other, and the through hole P constitutes a groove, and a large number of the grooves are formed in the groove. Bumps B may be arranged. The aspect ratio of the hole depth to the opening diameter of the through hole P (hole depth / opening diameter) is desirably 1 or less. The bump B has a portion that slightly protrudes from the through hole P of the semiconductor substrate 1 and is easy to attach to the circuit board.

  FIG. 5 is an enlarged view of a peripheral portion of the through hole P.

On the inner surface of the through hole P, an insulating film Pi made of SiO ₂ is formed. The bump B is in contact with the insulating film Pi. The insulating film Pi in the through hole P is continuous with the insulating film 9 that covers the back surface of the semiconductor substrate 1. The bump B is connected to the terminal 10 via a contact electrode CE in a contact hole CH provided in the thin film 3. That is, referring to FIG. 2, one bump B is electrically connected in order of an aluminum film 6, a polysilicon film 4, an aluminum film 6, a polysilicon film 4,. Then, it is electrically connected to the other bump B via the polysilicon film 4, the wiring, and the other terminal 10. A dummy bump B ′ as shown in FIG. 3 can also be provided immediately below the dummy terminal 10 ′, as in the periphery of the terminal 10. The insulating film Pi is not limited to SiO ₂ , and may be a single-layer insulating film such as PSG, BPSG, SiN, SiON, polymer, or a laminated film made of them.

  The function of the above infrared sensor will be described.

  Infrared rays incident on the infrared sensor pass through an infrared transmission substrate (infrared transmission window) FL made of a silicon substrate coated with an antireflection coating, and enter infrared detection units 4 and 6 such as thermocouples. The infrared detectors 4 and 6 convert the incident infrared rays into electric signals. This electrical signal is taken out through the through hole P. The infrared detectors 4 and 6 are disposed in a space formed by an adhesive layer AD interposed between the semiconductor substrate 1 and the infrared transmission substrate FL. Therefore, the response characteristics with respect to the temperature change of the infrared detectors 4 and 6 are improved.

  In particular, the infrared detectors 4 and 6 are formed on a membrane structure made of the thin film 3 formed on the semiconductor substrate 1 and have the hollow portion 2 below the thin film 3. Responsiveness to the temperature change of 6 is further improved.

  As described above, the through hole P is provided at a position facing the adhesive layer AD. Therefore, even if a pressure difference occurs inside and outside the space defined by the adhesive layer AD, the through hole P and its bottom are supported by the adhesive layer AD, and the through hole P and the insulating film Pi formed thereon Degradation and damage of the sensor are suppressed, and the characteristics, yield, and productivity of the infrared sensor are improved.

Further, in the above infrared sensor, since the polysilicon film 4 and the aluminum film 6 are formed to be stacked, the arrangement area for one thermocouple is narrowed, so the thermocouples can be arranged at high density. it can. Further, the thermopile pattern in which the polysilicon film 4 and the aluminum film 6 are laminated via the SiO ₂ film 5 has a three-layer structure, so that the mechanical support strength is improved. Since it is formed in a mesa shape from the upper part to the upper part of the outer extension part of the semiconductor substrate 1, the mechanical strength of the thin film 3 can be increased.

  Furthermore, since the infrared absorption film 8 of a single lump made of a material having adhesive force on the upper part of the thin film 3 on the upper part of the hollow part 2 fixes all of the thin film 3 and the thermopile pattern, The mechanical strength of the thinned region of the thin film 3 on the upper portion of the hollow portion 2 can be further improved. Further, since the infrared absorption film 8 is formed so as to cover all the hot contacts 11 of the thermopile pattern, the heat generated in the infrared absorption film 8 due to the absorption of infrared rays can be efficiently transmitted to the hot contacts 11.

In addition, since the aluminum film 6 has good thermal conductivity, the heat obtained at the hot junction is transferred to the semiconductor substrate 1 and may cause a decrease in sensitivity of the infrared sensor. However, the aluminum film 6 is formed on the polysilicon film 4. Further, since the thin film is thinly laminated with the SiO ₂ film 5 interposed therebetween, it is thermally insulated from the semiconductor substrate 1 and does not decrease the sensitivity of the infrared sensor. The SiO ₂ film 5 has not only electrical insulation between the polysilicon film 4 and the aluminum film 6 but also a heat insulation function for making it difficult to transfer the heat of the polysilicon film 4 to the aluminum film 6.

  Further, the infrared light incident on the infrared absorption film 8 may be reflected by the aluminum film 6 formed under the infrared absorption film 8 to cause a decrease in sensitivity of the infrared sensor, but the aluminum film 6 is formed thin. Therefore, the reflection can be minimized, and the reflected infrared light is further absorbed by the infrared absorption film 8, so that the sensitivity of the infrared sensor is not lowered.

  The first embodiment is not limited to this. The shape of the hollow portion 2 is not limited to a rectangle, but may be a circle or the like, and a thermopile pattern can be formed according to the shape.

  Next, a method for manufacturing the above infrared sensor will be described.

  FIG. 6 is a diagram for explaining a manufacturing process of the infrared detection unit.

  First, a semiconductor substrate 1 (first silicon substrate) made of silicon is prepared. A sacrificial layer made of polysilicon is formed on the surface of the semiconductor substrate 1. This sacrificial layer is removed in a later step and constitutes the upper space DL of the hollow portion 2. That is, the sacrificial layer is filled in the upper space DL before the sacrificial layer is etched. Here, the hollow portion 2 may be formed by etching only the sacrificial layer, or may be formed by further etching the bulk semiconductor substrate 1 in the thickness direction. In this sense, the hollow portion 2 in FIG. 6 indicates the semiconductor substrate 1 side with a dotted line.

  After the formation of the sacrificial layer, a thin film 3 made of an insulating layer is formed on the surface of the semiconductor substrate 1, and the exposed surface of the semiconductor substrate 1 and the sacrificial layer is covered with the thin film 3. Note that the sacrificial layer is formed on the semiconductor substrate 1 on the thin film 3 side with approximately the same size as the hollow portion 2. Next, after forming a thermopile pattern composed of the polysilicon film 4, the insulating film 5, and the aluminum film 6 and the terminals 10, a passivation film 7 is formed. Thereafter, the thin film 3 and the passivation film 7 are opened, an etching hole 13 is formed, and an infrared absorption film 8 is formed on the thermopile pattern (see FIG. 2). The infrared absorption film 8 may be formed after etching described later.

  A protective mask is formed on the back surface of the semiconductor substrate (first silicon substrate) 1 as necessary. As the etchant introduced into the etching hole 13, for example, a warmed mixture of ethylenediamine, pyrocatechol, and water is used. The semiconductor substrate 1 is a (100) substrate and the (100) plane is exposed. When the etching solution is introduced into the etching hole 13, the etching solution penetrates into the sacrificial layer of the polysilicon through the etching hole 13, and the semiconductor substrate 1 is anisotropic depending on the design while etching the sacrificial layer or after etching everything. Etching is started.

Thereby, the membrane structure which has the hollow part 2 can be formed. Etching is performed at a depth of about 2 to 30 μm. Alternatively, only the polysilicon sacrificial layer may be etched to form a membrane structure. In this case, the thickness of the polysilicon sacrificial layer is set to 0.2 μm to 3 μm. Etching may be hydrazine aqueous solution or the like in addition to the etching solution, or dry etching using XeF ₂ or the like.

  FIG. 7 is a view for explaining an attaching process of the infrared transmitting substrate FL.

  After the formation of the hollow portion 2, an infrared transmission substrate (second silicon substrate) FL made of silicon is attached to increase the mechanical strength. First, an adhesive layer AD made of Pyrex glass is formed on the outer edge portion of the semiconductor substrate (first silicon substrate) 1. An infrared transmitting substrate (second silicon substrate) FL is superimposed on the adhesive layer AD, and the adhesive layer AD and the infrared transmitting substrate (second silicon substrate) FL are anodically bonded in a vacuum or in a nitrogen atmosphere. Note that the adhesive layer AD may be formed before the etching. Further, the adhesive layer AD may be formed on the infrared transmitting substrate (second silicon substrate) FL side.

  Thereafter, the back side of the semiconductor substrate (first silicon substrate) 1 is mechanically and chemically polished to thin the semiconductor substrate 1. The thickness of the outer edge portion of the semiconductor substrate 1 after thinning is about 50 to 200 μm.

  FIG. 8 is a diagram for explaining a process of forming the through hole P.

  Next, a mask 9 resistant to the etching solution is formed on the back surface of the semiconductor substrate 1. Here, the mask 9 is made of SiN. After opening the through-hole formation scheduled region of the mask 9, an etching solution such as a KOH aqueous solution is introduced into the opening to etch the first semiconductor substrate 1 in the inner direction. In this wet etching, anisotropic etching proceeds, and when the etching solution reaches the thin film (thermal insulating film) 3, the etching stops and a tapered through hole P is formed. The above-described mask 9 may be removed as necessary, and then a new insulating film 9 may be formed on the back surface of the substrate.

In addition to the KOH aqueous solution, an alkaline aqueous solution such as hydrazine, EDP, or TMAH can be used as the etching solution. In addition to SiN, a highly alkali-resistant film such as SiO ₂ can be used as the mask material, which can be formed by a CVD method or the like. In the case of this example, since the infrared transmitting substrate (second silicon substrate) FL exists through the adhesive layer AD even after the etching is completed, there is no film damage at the time of completion of the etching or after the completion and the yield is lowered. The process can proceed without any problems.

  FIG. 9 is a diagram for explaining a bump electrode attaching step.

  Next, an insulating layer Pi made of a passivation film is formed on the inner wall surface of the through hole P by a CVD method or a sputtering method. Thereafter, an opening (contact hole CH) is formed in the bottom of the insulating layer Pi and the region of the thin film 3 corresponding thereto, and the back side of the terminal 10 is exposed. A contact electrode (under bump metal) CE is formed on the exposed surface of the terminal 10 by electroless plating or the like. The bump B is disposed in the through hole P and is brought into contact with the contact electrode CE. Note that the end of the bump B opposite to the contact electrode CE protrudes from the back surface of the semiconductor substrate 1.

  The contact electrode CE can be formed by vapor deposition, sputtering, etc. in addition to electroless plating. The material of the contact electrode CE may be a single metal layer such as Ni, Au, Cr, Cu, or Pt, an alloy, or a laminated film thereof. A bump B made of solder or the like is formed so as to be in contact with the contact electrode CE. For the formation of the bump B, a ball mounting method, a printing method plating method, a bonding method, or the like can be used. In the ball mounting method, the bump formation part is concave, and displacement can be prevented. In the printing method, it is possible to form a ball by embedding solder paste directly in the concave part with a squeegee and reflowing. .

  The above steps are performed in a wafer state, and finally the chip is completed by dicing the substrate bonding portion. That is, after the bump placement step described above, a region on the semiconductor substrate or infrared transmission substrate FL that is anodically bonded through the adhesive layer AD is set as a dicing line, and the dicing line is cut. That is, when a plurality of infrared sensors are formed, after the through holes P are formed, the dicing lines between the infrared sensors can be cut to be separated into individual infrared sensors. In this case, since the bonding of the semiconductor substrate 1 and the infrared transmission substrate FL and the formation of the through hole P have been completed, the product is close to the final shipping form by separating into individual infrared sensors of chip size by the dicing. Is completed. Therefore, according to this manufacturing method, a small and thin infrared sensor can be manufactured at low cost with high productivity.

  FIG. 10 is a cross-sectional view of an infrared sensor having a through hole P formed by etching substantially perpendicularly to the back surface of the substrate.

This infrared sensor is the same as the above-described infrared sensor except for the shape of the through hole P. When the through holes in which the bumps B are formed are made by dry etching, the formation method is almost the same as that of alkaline wet etching, and the etching mask 9 is made of a metal layer such as SiO ₂ or resist or aluminum or a laminated film thereof. Then, the portion corresponding to the through hole of the semiconductor substrate 1 is dry-etched using a reactive ion etching (RIE) method.

  Etching is selectively stopped in the thin film (insulating film) 3 immediately below the terminals 10 of silicon and aluminum. If ICP-RIE using high-density plasma is used as RIE, the etching rate is fast and etching can be performed substantially vertically. When a resist is used as an etching mask, the resist is removed by oxygen ashing or the like, and a process after the formation of the through hole is performed. The planar shape of the through hole P can be circular.

  FIG. 11 is a plan view of an infrared sensor according to another embodiment in which the infrared transmission substrate FL is omitted from the infrared sensor. The notation of the plan view conforms to FIG. 12 is a cross-sectional view of the infrared sensor shown in FIG. 11 taken along arrows XII-XII.

  This infrared sensor differs from the one shown in FIG. 2 only in the shape of the hollow portion 2 and the manufacturing method of the portion, and the other configuration and manufacturing method are the same. In the case of this example, since the hollow portion 2 is open to the back side of the semiconductor substrate 1, the etching hole is omitted.

  The method for forming the hollow portion 2 will be described. After the thin film 3, the thermopile pattern, the passivation film 7, and the infrared absorption film 8 are formed on the surface of the semiconductor substrate 1 where the hollow portion 2 is not formed, the thin film 3 of the semiconductor substrate 1 is formed. A mask made of SiN or the like that is resistant to the silicon etching solution is formed on the surface (back surface) opposite to the formed surface. Then, the mask in a region where the hollow portion 2 is to be formed is opened, and etching is performed while protecting the surface of the semiconductor substrate 1.

  Thereby, etching starts from the opening of the mask on the back surface, and the etching stops when the thin film 3 that is resistant to the etching solution is reached. For example, an aqueous KOH solution or the like is used as an etchant, and anisotropic etching can be performed by using a (100) substrate as the first semiconductor substrate 1. By this etching, the membrane structure having the hollow portion 2 shown in FIG. 12 can be formed. This back surface etching can be performed simultaneously with the formation of the through hole P from the back surface described in the first embodiment.

  An insulating film 9 is formed on the back side of the semiconductor substrate 1 as necessary. Moreover, you may block | close the hollow part 2 open | released by the back surface of the semiconductor substrate by adhere | attaching a board | substrate etc. so that a space may be provided as needed. This makes it possible to prevent the membrane from being damaged.

Further, the shape of the hollow portion 2 is not limited to a rectangle, but may be a circle or the like,
A thermopile pattern can be formed according to the shape. Moreover, when using an etching hole, the shape and location can be changed by a thermopile pattern.

  FIG. 13 is a cross-sectional view of an infrared sensor including a plurality of the infrared detection units 4 and 6 described above. Here, for clarification of explanation, the infrared detectors 4 and 6 are indicated by the symbol IRP, and the detailed configuration is omitted. The infrared sensor has an internal space SP between the semiconductor substrate 1 and the infrared transmission substrate FL. In this space SP, a deflection preventing wall (spacer) STP that suppresses the deflection of the infrared transmitting substrate FL toward the infrared detection unit IRP is provided.

  When the infrared transmitting substrate FL is bent, it contacts the infrared detecting unit IRP, and the infrared detecting unit IRP is thermally connected to reduce the sensitivity or may be damaged. This bend prevention wall STP is provided in order to prevent such sensitivity reduction and damage, and the height of the bend prevention wall STP from the semiconductor substrate 1 is higher than the height of the infrared detector IRP, and the infrared transmission substrate FL. Is bent against the bending preventing wall STP, the amount of bending of the infrared transmitting substrate FL is suppressed.

  There are a plurality of infrared detection units IRP, and each infrared detection unit IRP constitutes a pixel and outputs a signal independently. In this example, two bumps B for output extraction are provided for clarity of explanation. Only displayed. The bending prevention wall STP is formed on the thin film 3 having no hollow portion below, and is provided between the infrared detection portions IRP. In the case where there are a plurality of infrared detection units IRP, the sensor is enlarged together with the infrared transmission substrate FL. However, since the deflection prevention wall STP is provided between the infrared detection units IRP, the amount of deflection is suppressed as a whole. Can do. In addition, the formation position of the bending prevention wall STP is set in a region between the adjacent hollow regions 2.

  The bending prevention wall STP will be described in detail below.

  When manufacturing a one-dimensional or two-dimensional infrared detector array, the chip size increases. When the chip size is large, the size of the internal space SP in the planar direction increases when the semiconductor substrate 1 and the infrared transmitting substrate FL are bonded only around the chip. Therefore, there is a possibility that the infrared detection unit IRP and the infrared transmission substrate FL on the surface of the substrate may come into contact with each other due to warpage of the wafer or external force (for example, when the wafer is bonded or mounted after being formed into chips), and the element unit may be damaged. Alternatively, problems such as a decrease in sensitivity due to heat escape due to contact with the infrared transmitting substrate FL occur.

  As a solution to the above problem, a deflection preventing wall STP is provided between adjacent pixels or between pixels at a certain pixel interval. As a result, the size of the internal space SP in the planar direction can be reduced, and contact between the infrared detection unit IRP and the infrared transmission substrate FL due to wafer warpage or external force can be prevented. Further, the bending prevention wall STP can suppress element destruction due to pressure application during mounting such as flip chip bonding.

The deflection preventing wall STP is formed on the semiconductor substrate 1 at a location where the deflection preventing wall is to be formed, such as Al, Ti, Au, Ni, Ti, Cr, W, Si, Pt, Cu, SiN, SiO ₂ , BPSG, PSG, etc. A material, a compound thereof or an alloy is formed as a single layer or stacked, deposited by vapor deposition, sputtering, CVD, or the like, and patterned by etching or lift-off. A plating method may be used for this formation. For this formation, glass frit, resin, or solder paste may be printed and cured. Furthermore, a photosensitive resin may be used. Examples of the resin main component of the photosensitive resin include polyimide, acrylate, PMMA, silicone, and epoxy. The photosensitive resin can be formed at a very low cost with few steps.

  As described above, the manufacturing method of the infrared sensor described above includes a step of forming a membrane structure made of the thin film 3 on the semiconductor substrate 1, a step of forming the infrared detector IRP on the membrane structure, Then, an adhesive layer AD is partially formed on the semiconductor substrate 1 or the infrared transmissive substrate FL or both substrates so as to provide a space between the infrared transmissive substrate FL made of silicon, and then the semiconductor is interposed through the adhesive layer AD. A step of bonding the substrate 1 and the infrared transmission substrate FL and a step of forming the through hole P in the semiconductor substrate 1 from the opposite side of the semiconductor substrate 1 to the infrared transmission substrate FL are provided.

  Further, the through hole P is provided at a position facing the adhesive layer AD. According to this manufacturing method, the above-described infrared sensor having excellent characteristics is manufactured by suppressing breakage / deterioration of the through hole and its bottom, the insulating film Pi, and the like when forming the through hole by supporting the adhesive layer AD. be able to.

  In addition to the thermopile, a bolometer, thermistor, pyroelectric element, bimetal element, diode, crystal resonator, and Golay cell can also be used as the infrared detector IRP.

  In the above description, a silicon substrate is used as the infrared transmission substrate FL. However, the infrared transmission substrate FL may be a silicon substrate, or a substrate that transmits infrared rays, such as a germanium substrate or infrared transmission glass.

  In addition, as the material of the adhesive layer AD, low melting point glass, solder, metal (unit, alloy), resin, or the like can be used, and even if it is a single layer or a laminated layer in order to increase its adhesive strength and reliability. good. The above bonding method is not limited to anodic bonding, and may be bonded by applying heat, pressure, ultrasonic waves, or the like as necessary. Further, although not shown, an adhesion layer for improving adhesion between the adhesive layer AD and the substrate may be provided. Adhesion may be performed after the adhesive layer AD is provided on the infrared transmitting substrate FL side, or adhesion may be performed after the adhesive layer AD is provided on both sides. Further, the adhesive layer AD may be provided only on the infrared transmitting substrate FL side.

  In addition to the method of directly connecting the input / output terminal 10 from the infrared detection unit to the bump electrode, a circuit for processing the output signal of the infrared detection unit is provided on the semiconductor substrate 1, and the input / output terminal and bump electrode of this circuit are provided. It is good also as a structure which connects. It is also possible to form a thermistor or a diode for monitoring the substrate temperature on the semiconductor substrate 1 and to electrically connect the terminals and the bumps.

  In addition, in order to prevent infrared stray light incident from the semiconductor substrate side, a light shielding film such as metal may be provided on a portion of the semiconductor substrate opposite to the infrared transmission substrate on a portion having no through hole.

  Further, in order to prevent heat from escaping from the infrared detection unit to the semiconductor substrate side by radiation, an infrared reflection film made of metal or the like may be provided on the surface of the semiconductor substrate facing the infrared detection unit. By doing so, it is possible to block infrared rays incident from the semiconductor substrate side including those from the semiconductor substrate itself.

  As described above, the infrared sensor according to the present invention includes a semiconductor substrate on which an infrared detection unit is formed, an infrared transmission substrate facing the semiconductor substrate, and a portion interposed between the semiconductor substrate and the infrared transmission substrate. And an adhesive layer for providing a space between the substrates, wherein the semiconductor substrate has a through hole for taking out an electric signal from the infrared detecting portion at a position facing the adhesive layer. And

  Infrared light incident on the infrared sensor passes through the infrared transmission substrate and enters an infrared detection sensor unit such as a thermocouple. The infrared detector converts the incident infrared light into an electrical signal. This electric signal is taken out through the through hole. The infrared detection unit is arranged in a space formed by an adhesive layer interposed between the semiconductor substrate and the infrared transmission substrate. Therefore, the response characteristic with respect to the temperature change of the infrared detector is improved.

  The through hole is provided at a position facing this adhesive layer. Therefore, even when a pressure difference between the inside and outside of the space occurs during mounting, for example, the through hole and its bottom are supported by the adhesive layer, and the through hole and the insulating film formed thereon are deteriorated or damaged. It is suppressed and the characteristics of the infrared sensor are improved.

  Moreover, it is preferable that a bending prevention wall that suppresses the bending of the infrared transmitting substrate toward the infrared detection unit is provided in the space. When the infrared transmission substrate is bent, it contacts the infrared detection unit, and the infrared detection unit is damaged or contacted, so that heat conduction is increased and sensitivity may be reduced. This bend prevention wall is provided to prevent such breakage and sensitivity deterioration, and the height of the bend prevention wall from the semiconductor substrate is higher than the upper surface of the infrared detection unit, and the infrared transmission substrate is bent. Then, this abuts against the deflection preventing wall, and the amount of deflection of the infrared transmitting substrate is suppressed.

  When the number of infrared detection units is plural, it is preferable that the deflection preventing wall is provided between the infrared detection units. That is, when there are a plurality of infrared detection units, the infrared transmission substrate is enlarged, but in this case, by providing a deflection prevention wall between the infrared detection units, the amount of deflection can be suppressed as a whole. it can.

  The infrared detection unit is preferably formed on a membrane structure formed on the semiconductor substrate. In this case, the response of the infrared detection unit to a temperature change can be improved.

  Further, it is preferable that a vacuum is maintained in a space formed between the semiconductor substrate and the infrared transmitting substrate via the adhesive layer. The transfer of thermal energy may be heat conduction, convection, or radiation. As will be described later, in the heat transfer from the infrared detection unit, the part related to heat conduction is formed by forming the infrared detection unit on a thin film that is difficult to transfer heat, so that the heat is not released. Since the space formed between the infrared transmitting substrate and the semiconductor substrate is evacuated, infrared (heat) incident on the infrared detecting portion formed on the semiconductor substrate is not released to the space side by convection. Therefore, detection with higher sensitivity becomes possible. The remaining radiation can be detected with higher sensitivity by providing an infrared reflecting film made of metal or the like on the surface of the semiconductor substrate facing the infrared detecting section.

  The manufacturing method of the above-described infrared sensor includes a step of forming an infrared detection part on a thin film to be a membrane on a semiconductor substrate, and a membrane by forming a hollow part below the thin film on which the infrared detection part is formed. An adhesive layer is partially formed on at least one of the semiconductor substrate and the infrared transmitting substrate so as to provide a space between the step of forming a structure and the semiconductor substrate and an infrared transmitting substrate made of silicon or the like. Thereafter, the step of bonding the infrared transmission substrate to the semiconductor substrate through the adhesive layer, and the step of forming a through hole in the semiconductor substrate from the opposite side of the semiconductor substrate to the infrared transmission substrate, The through-hole is provided at a position facing the adhesive layer.

  According to this manufacturing method, the above-described infrared sensor having excellent characteristics can be manufactured by suppressing breakage / deterioration of the through-holes and the like when forming the through-holes by supporting the adhesive layer.

  Moreover, when forming a some infrared sensor, it is preferable to cut | disconnect on the dicing line between infrared sensors, and to isolate | separate into each infrared sensor after formation of a through-hole. In this case, since the bonding of the semiconductor substrate and the infrared transmissive substrate and the formation of the through hole have been completed, a product close to the final shipment form is completed by separating the individual infrared sensors by the dicing. Therefore, according to this manufacturing method, productivity is improved at low cost.

  The present invention can be used for an infrared sensor and a manufacturing method thereof.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Hollow part, 3 ... Thin film, 4 ... Polysilicon film, 5 ... Insulating film, 6 ... Aluminum film, 7 ... Passivation film, 8 ... Infrared absorbing film, 9 ... insulating film, 10 ... terminal, 11 ... hot contact, 12 ... cold junction, 13 ... etching hole, AD ... adhesive layer, B ... Bump, CE ... Contact electrode, CH ... Contact hole, DL ... Upper space, FL ... Infrared transmitting substrate, IRP ... Infrared detector, P ... Through hole, Pi .... Insulating film, SP ... internal space, STP ... deflection prevention wall.

Claims (6)

In infrared sensor,
A semiconductor substrate on which an infrared detector is formed;
An infrared transmitting substrate facing the semiconductor substrate;
An adhesive layer partially interposed between the semiconductor substrate and the infrared transmitting substrate, and providing a space between the substrates;
With
The semiconductor substrate has a through hole in which the terminal and the adhesive layer are located on an axis thereof in order to take out an electrical signal from the infrared detection unit via a terminal at a position facing the adhesive layer ,
On the inner wall surface of the through hole, an insulating film is formed in contact with a thin film made of an insulating layer provided on the semiconductor substrate at the bottom of the through hole ,
In the opening on the adhesive layer side of the through hole, a contact electrode connected to the infrared detection unit is provided in a contact hole located at the bottom of the through hole in the insulating film and the thin film, and the terminal Connected to
The through hole has a truncated pyramid shape, and the diameter of the through hole decreases from the back surface side to the front surface side of the semiconductor substrate,
Bumps are disposed in the through holes, and the outer surfaces of the bumps are in contact with the insulating film, and between the outer surfaces of the bumps on the opposite side of the contact electrodes from the contact position and the insulating film. The infrared sensor is characterized in that there is a gap and the bump has a portion protruding from the through hole of the semiconductor substrate. In infrared sensor,
A semiconductor substrate on which an infrared detector is formed;
An infrared transmitting substrate facing the semiconductor substrate;
An adhesive layer partially interposed between the semiconductor substrate and the infrared transmitting substrate, and providing a space between the substrates;
With
The semiconductor substrate has a through hole in which the terminal and the adhesive layer are located on an axis thereof in order to take out an electrical signal from the infrared detection unit via a terminal at a position facing the adhesive layer ,
On the inner wall surface of the through hole, an insulating film is formed in contact with a thin film made of an insulating layer provided on the semiconductor substrate at the bottom of the through hole ,
In the opening on the adhesive layer side of the through hole, a contact electrode connected to the infrared detection unit is provided in a contact hole located at the bottom of the through hole in the insulating film and the thin film, and the terminal Connected to
The through hole has a truncated pyramid shape, and the diameter of the through hole decreases from the back surface side to the front surface side of the semiconductor substrate,
A bump is located in the through hole, and there is a gap at least partially between the outer surface of the bump and the inner surface of the through hole, and the bump is a portion protruding from the through hole of the semiconductor substrate. Infrared sensor characterized by having.   The bump contacts the inner surface of the through hole, and there is a gap between the outer surface of the bump opposite to the contact electrode from the contact position and the inner surface of the through hole. Item 3. The infrared sensor according to Item 2.   The infrared sensor according to any one of claims 1 to 3, wherein an aspect ratio (hole depth / opening diameter) of a hole depth to an opening diameter of the through hole is 1 or less.   The infrared sensor according to claim 1, wherein the infrared detection unit is formed on a membrane structure formed on the semiconductor substrate. In the manufacturing method of an infrared sensor given in any 1 paragraph of Claims 1 thru / or 5,
An adhesive layer is partially formed on at least one of the semiconductor substrate and the infrared transmitting substrate so as to provide a space between the semiconductor substrate and the infrared transmitting substrate, and then the semiconductor substrate is interposed through the adhesive layer. Bonding the infrared transmitting substrate to
After the step of bonding the infrared transmitting substrate, the step of thinning the semiconductor substrate by mechanically and chemically polishing the surface of the semiconductor substrate opposite to the infrared transmitting substrate;
A step of forming a through hole in the semiconductor substrate from the opposite side of the infrared transmitting substrate of the semiconductor substrate after the bonding step of the infrared transmitting substrate;
A method for manufacturing an infrared sensor, comprising:

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