JP3405102B2 - Manufacturing method of solder bump connection element - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a solder bump connecting element for connecting to a circuit board or the like via a solder bump.

[0002]

2. Description of the Related Art FIG. 4 shows an example of a solder bump portion of a solder bump connecting element. The solder bump connection element is
An element (not shown) such as a microgyro or a capacitor formed on the element forming substrate 1 is electrically connected to a predetermined circuit board or the like on the other side of the connection through the solder bump 3. As shown in FIG. 4, the solder bump portion of the connection element includes an element forming substrate 1 on which elements such as a microgyro and a capacitor are formed, and an insulating substrate 2.
, The solder bumps 3, the connecting portions 4, the through holes 5,
The connection electrode 6, the base electrode film 8 and the lead conductor 10 are provided.

As shown in the figure, an insulating substrate 2 is bonded on the element forming substrate 1, and a connecting portion 4 for connecting the element is formed on the element forming substrate 1. The connecting portion 4 is formed. An opening is formed in the upper surface of the insulating substrate 2 corresponding to, and a through hole 5 reaching the connecting portion 4 from the opening is formed in the insulating substrate 2. A connection electrode 6 is formed on the connection portion 4, which is the bottom surface of the through hole 5.

A base electrode film 8 is formed in a region where the solder bumps 3 are formed on the upper surface of the insulating substrate 2, and the solder bumps 3 are bonded and formed on the base electrode film 8. The base electrode film 8 is formed of a material that can be easily bonded to both the insulating substrate 2 and the solder bump 3.
Since the solder bumps 3 are difficult to bond to the insulating substrate 2, the solder bumps 3 can be fixedly formed on the insulating substrate 2 via the base electrode film 8. Further, a lead conductor 10 that connects the connection electrode 6 and the base electrode film 8 is formed.

The solder bump 3 is bonded to a predetermined connecting portion of a circuit board or the like on the other side of the connection, and the element includes the connecting portion 4, the connecting electrode 6, the lead conductor 10, the base electrode film 8 and the solder bump 3. It is conductively connected to the connecting portion of the circuit board or the like through.

The solder bump connecting element having the above structure is manufactured as follows. For example, the insulating substrate 2 in which the through holes 5 are formed in advance is joined to the element forming substrate 1 in which the elements and the connecting portions 4 are formed by aligning the through holes 5 with the connecting portions 4. Next, a resist pattern is formed on the upper surface of the insulating substrate 2 to regulate the region where the connection electrode 6 and the base electrode film 8 are formed, and then the bottom surface of the through hole 5 is connected by a film forming technique such as sputtering or vapor deposition. The connection electrode 6 is formed on the portion 4, and the base electrode film 8 is formed on the upper surface of the insulating substrate 2.

After that, the resist pattern is removed,
Next, a resist pattern that regulates a region where the lead conductor 10 that connects the connection electrode 6 and the base electrode film 8 is formed, and then the lead conductor 10 is formed by a film forming technique. Then, the resist pattern is removed, a solder material is adhered on the base electrode film 8, and the solder material is melted to form a solder bump, thereby completing a solder bump connecting element.

[0008]

In the solder bump connecting element having the above structure, the solder bump 3 and the opening of the through hole 5 are separately formed on the upper surface of the insulating substrate 2 as described above. In this way, the solder bumps 3 are formed on the upper surface of the insulating substrate 2.
Since the openings of the through holes 5 and the through holes 5 must be provided separately, both the solder bump 3 forming area and the through hole 5 opening forming area are required on the upper surface of the insulating substrate 2. Since the size of each formation region of the through hole 5 cannot be made smaller than a predetermined size, the upper surface area of the insulating substrate 2 cannot be reduced, which makes it difficult to downsize the insulating substrate 2. Then, there arises a problem that it is difficult to downsize the solder bump connection element.

A connection electrode 6 is formed on the connection portion 4 and a base electrode film 8 is formed on the upper surface of the insulating substrate 2 to electrically connect the connection electrode 6 and the base electrode film 8. When the lead conductor 10 is provided and the connection electrode 6, the base electrode film 8 and the lead conductor 10 are formed, for example, after forming a resist pattern that regulates the formation region of each electrode, each electrode is formed by sputtering or vapor deposition. There is a problem that the step of forming an electrode becomes complicated because a complicated step of forming and forming the film of 1) and then removing the resist pattern is required.

[0010] This invention has been made to solve the above problems, is easy to miniaturize, moreover, the solder bump connection <br/> element which can be produced by a simple process It is to provide a manufacturing method of.

[0011]

[0012]

[Means for Solving the Problems] To achieve the above object
The present invention has the following structure to solve the above problems.
As a means to That is, the first invention of the method for manufacturing a solder bump connection element is such that a connection portion for connecting to the element is formed on the element formation substrate on which the element is formed, and an insulating substrate is bonded on the element formation substrate. In the method of manufacturing a solder bump connecting element, an opening is formed in the upper surface of the insulating substrate corresponding to the connecting portion, and a through hole reaching the connecting portion from the opening is formed in the insulating substrate. An insulating substrate in which through holes are formed in the element formation substrate in which the element and the connection portion are formed is joined by aligning the connection portion with the above through hole, and then the material of the base electrode film is attached by the film forming technology. Then, a conductive film is formed on at least the upper surface of the insulating substrate and the upper surface of the connection portion, and thereafter, the conductive film on the upper surface of the insulating substrate is completely removed to form a base electrode film on the upper surface of the connection portion. Accommodating the soldering material inside the Horu, it causes protrude solder bumps are melted to form the solder bumps to solder material on the upper side of the insulating substrate, joining the base electrode film on the upper surface of the connection between the solder bump structure Is a means for solving the above-mentioned problems.

A second invention of the method for manufacturing a solder bump connection element has the above-mentioned problem in that the conductive film on the upper surface of the insulating substrate shown in the first invention of the method for manufacturing a solder bump connection element is completely removed by a polishing technique. As a means to solve.

In the invention of the above structure, the base electrode film is formed on the connection portion on the bottom surface of the through hole formed in the insulating substrate, and the solder bump is bonded and formed on the base electrode film. The bump protrudes above the insulating substrate and is accommodated in the through hole. For example, the solder bumps of the portion protruding above the insulating substrate are connected to the connection portion of the circuit board of the predetermined connection partner side, and the element formed on the element forming substrate is connected to the connection portion and the base. Conductive connection is made to the connection portion of the circuit board via the electrode film and the solder bump.

As described above, since the solder bumps are accommodated in the through holes, it is not necessary to separately provide a region for forming the through holes and a region for forming the solder bumps on the upper surface of the insulating substrate, and the upper surface of the insulating substrate can be formed. It is not necessary to secure the formation region of the solder bumps, the area of the upper surface of the insulating substrate can be reduced, and the insulating substrate can be easily downsized. This facilitates downsizing of the solder bump connection element.

Further, since the base electrode film is formed on the connection portion on the bottom surface of the through hole and the solder bumps are connected on the base electrode film, the base electrode film shown in the present invention is the same as that of the conventional example. In addition, the connection electrode above the connection portion and the function of the base electrode film below the solder bump are combined. Further, the lead conductor for connecting the connection electrode and the base electrode film is not required, the structure of the solder bump connection element is simplified, and the step of forming the connection electrode and the lead conductor can be omitted, so that the solder bump connection can be achieved. The element manufacturing process can be simplified.

Further, since the base electrode film is not formed on the upper surface of the insulating substrate, for example, after the material of the base electrode film is attached to the upper surface of the insulating substrate and the upper surface of the connection portion to form the conductive film, the upper surface of the insulating substrate is formed. It becomes possible to form the base electrode film only on the connection portion by removing all the conductive films of, and it is possible to easily form the base electrode film without using the resist pattern as shown in the conventional example. The manufacturing process of the base electrode film can be simplified and the manufacturing time of the base electrode film can be shortened, and the manufacturing process of the solder bump connection element can be further simplified and the manufacturing time can be shortened.

[0018]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 shows a product manufactured by the manufacturing method of the present invention .
The characteristic solder bump portion is shown in the solder bump connecting element. A characteristic of this solder bump connecting element is that the solder bump 3 is housed in the through hole 5 to facilitate the downsizing of the solder bump connecting element, and other configurations are the same as those of the conventional example. It is the same. In the description of this embodiment, the same reference numerals are given to the same names as those in the conventional example.

As shown in FIG. 1, an element forming substrate 1 made of silicon is provided with a connecting portion 4 for connecting to an element (not shown) formed on the element forming substrate 1.
The connection portion 4 has a high concentration of impurities such as boron, phosphorus, and antimony (for example, 10 ²⁰ cm) on the silicon element formation substrate 1.
^{-Concentration of -3} or more) is formed by diffusion (doping).

An insulating substrate 2 made of a glass substrate such as Pyrex glass (trademark) is provided on the element forming substrate 1.
(For example, the insulating substrate 2 has a thickness of 300 μm), and an opening is formed in the upper surface of the insulating substrate 2 corresponding to the connecting portion 4, and the through hole 5 reaching the connecting portion 4 from the opening is formed. Are formed on the insulating substrate 2.

A base electrode film 8 is formed on the connection portion 4 on the bottom surface of the through hole 5 and on the inner surface of the through hole 5. The base electrode film 8 includes a Cr layer (for example, the layer thickness is 50 nm) and a Ni layer (for example, the layer thickness is 1 μm).
m) and a layer of Au (for example, the thickness of the layer is 200 nm) are sequentially laminated from the bottom side. The solder bumps 3 made of PbSn solder, which is a solder material, are bonded to the base electrode film 8. As shown in FIG. 1, this solder bump 3 projects into the upper surface of the insulating substrate 2 and is accommodated in the through hole 5.

The solder bumps 3 protruding above the insulating substrate 2 are connected to, for example, a predetermined connection portion (not shown) of the circuit board 11 on the connection partner side, as shown in FIG. In the example of the solder bump connection element shown in FIG. 3,
A space 12 surrounded by the element forming substrate 1 and the insulating substrate 2 is formed, and an element 14 such as a microgyro, an acceleration sensor, a capacitor, etc. is housed in the space 12, and the element 14 is connected to the element 14. Part 4 and base electrode film 8
The element 14 can be incorporated into a circuit formed on the circuit board 11 by being conductively connected to the connection portion of the circuit board 11 via the solder bumps 3 in order.

[0024] Handa bump connection element of this is constituted as described above, will now be described an example of a method of manufacturing a solder bump connection element configured as described above. First, as shown in FIG. 2A, an element (not shown) is formed on a silicon element formation substrate 1, and impurities such as boron, phosphorus and antimony are formed in a connection portion 4 formation region of the element formation substrate 1. Is diffused using an impurity diffusion technique to form a connection portion 4 connected to the above element.

After that, as shown in FIG. 2B, the insulating substrate 2 which is a glass substrate in which the through holes 5 are formed in advance on the element forming substrate 1 is positioned at the through holes 5 at the connecting portions 4. They are arranged together, and the contact portion between the element forming substrate 1 and the insulating substrate 2 is joined by an anodic joining method.

Next, as shown in FIG. 2C, the material of the base electrode film 8 is attached from the upper side of the insulating substrate 2 by a film forming technique such as vapor deposition or sputtering, and the upper surface of the insulating substrate 2 and
A conductive film 8a including a region to be the base electrode film 8 on the connection portion 4 on the bottom surface of the through hole 5 and on the inner surface of the through hole 5.
To form. In this embodiment, as described above, the conductive film 8a is composed of a laminated film in which each layer of Cr, Ni and Au is laminated in order from the bottom, so that Cr, Ni and Au are deposited from the upper side of the insulating substrate 2. The conductive film 8a is formed by sequentially adhering it by a film forming technique such as vapor deposition or sputtering.

After that, as shown in FIG. 2D, the conductive film 8a on the upper surface of the insulating substrate 2 is completely removed by a polishing technique to form the base electrode film 8 on the connection portion 4. Then, a PbSn solder material is filled in the through hole 5 by a printing method or the like, and then the element forming substrate 1 is housed in a furnace to melt the PbSn solder material, and the PbSn solder material is used as a base electrode film. 8 and the PbSn solder material is projected to the upper side of the insulating substrate 2 to form the solder bump 3 to complete the solder bump connecting element.

According to this embodiment example, the through hole 5
Since the solder bumps 3 are housed in the insulating substrate 2,
Since it is not necessary to separately secure a region for forming the through holes 5 and a region for forming the solder bumps 3 on the upper surface of the insulating substrate 2, it is not necessary to provide a region for forming the solder bumps 3 on the upper surface of the insulating substrate 2. The area of the upper surface of 2 can be reduced, and the size of the insulating substrate 2 can be reduced.

Further, since the base electrode film 8 is formed on the connection portion 4 on the bottom surface of the through hole 5 and the solder bump 3 is bonded onto the base electrode film 8, the base electrode film 8 is formed as shown in FIG. The lead electrode 10 for connecting the connection electrode 6 and the base electrode film 8 can be omitted, and the lead conductor 10 can be omitted. You can In this way, the connection electrode 6
Since the lead conductor 10 can be omitted, the structure of the solder bump portion of the solder bump connecting element is simplified and the connecting electrode 6
Thus, the step of manufacturing the lead conductor 10 can be omitted, and the manufacturing steps of the solder bump connection element can be simplified.

Further, the solder bumps 3 are formed on the upper surface of the insulating substrate 2.
Therefore, it is not necessary to form the base electrode film 8 of the solder bump 3 and the lead conductor 10 on the upper surface of the insulating substrate 2, and thus the base electrode film is formed from the upper side of the insulating substrate 2 by the film forming technique. The material of the film 8 is the upper surface of the insulating substrate 2,
After forming the conductive film 8a including the region to be the base electrode film 8 on the connection part 4 and the inner surface of the through hole 5, all of the conductive film 8a on the upper surface of the insulating substrate 2 is simply removed to easily perform at least the connection part. The base electrode film 8 can be selectively formed on the substrate 4.

As described above, the base electrode film 8 can be easily manufactured without performing the conventional step of forming the base electrode film 8 using a troublesome resist pattern.
It is possible to simplify the formation process of the underlayer and shorten the production time of the base electrode film 8. From this, it is possible to efficiently manufacture a large number of solder bump connection elements, reduce the cost of the solder bump connection elements, and provide an inexpensive solder bump connection element.

The present invention is not limited to the above-mentioned embodiment, and various embodiments can be adopted. For example, although the element formation substrate 1 is formed of silicon in the above embodiment, it may be formed of a semiconductor other than silicon, an insulator such as glass, or the like. Although the insulating substrate 2 is made of a glass material, it may be made of an insulator other than glass.

Furthermore, in the above embodiment, the connection portion 4 was formed by diffusing impurities in the element formation substrate 1.
Polysilicon may be provided in the connection portion 4 formation region of the element forming substrate 1 to form the connection portion 4 with the polysilicon.
You may comprise the connection part 4 with conductors, such as aluminum and gold.

Further, in the above embodiment, the base electrode film 8 is a laminated film in which each layer of Cr, Ni and Au is laminated in order, but the base electrode film 8 is a single layer film made of a conductive material. Or a film in which two layers of different conductor materials are laminated, or a film in which four or more layers of different conductor materials are laminated.
The material of the base electrode film 8 is not limited to the above Cr, Ni, Au, and can be composed of various materials.

Further, in the above embodiment, the material of the base electrode film 8 is adhered from the upper side of the insulating substrate 2 by vapor deposition, sputtering or the like. However, film formation by photolithography technology or printing technology other than vapor deposition or sputtering. The material of the base electrode film 8 may be attached to the upper surface of the insulating substrate 2 and the upper surface of the connection portion by a technique. The conductive film 8a may not be formed on the inner surface of the through hole 5.

Further, in the above embodiment, the insulating substrate 2 is used.
Although the base electrode film 8 on the upper surface of 1 is completely removed by the polishing technique, the base electrode film 8 on the upper surface of the insulating substrate 2 may be removed by a method other than the polishing technique.

[0037]

According to the present invention, since the solder bumps are accommodated in the through holes, it is not necessary to provide the solder bump formation region separately from the through hole formation region, and the solder bump formation region is formed on the upper surface of the insulating substrate. Since it is not necessary to secure
The area of the upper surface of the insulating substrate can be reduced. That is, the insulating substrate can be downsized, which facilitates downsizing of the solder bump connecting element.

Further, since the base electrode film is formed on the connection portion on the bottom surface of the through hole and the solder bump is bonded on the base electrode film, the base electrode film is connected to the connection electrode on the connection portion. Since the structure also has the function of the base electrode film, the connection electrode can be omitted. Moreover, the lead conductor connecting the connection electrode and the base electrode film can be omitted. As described above, since the connection electrode and the lead conductor can be omitted, the structure of the solder bump connection element can be simplified, and the step of forming the connection electrode and the step of forming the lead conductor can be omitted. The manufacturing process can be simplified.

Further, since the base electrode film and the lead conductor are not formed on the upper surface of the insulating substrate, it is possible to adopt the method of manufacturing the solder bump connecting element according to the present invention. That is, when forming the base electrode film, the material of the base electrode film is attached by a film forming technique to form a conductive film on at least the upper surface of the connection portion and the upper surface of the insulating substrate, and then the conductive film on the upper surface of the insulating substrate. The base electrode film can be formed by removing all of these. In this way, the base electrode film can be selectively formed on the upper surface of the connection portion by simply removing all the conductive film on the upper surface of the insulating substrate, so that the base electrode film can be easily formed.

In the invention in which all the underlying electrode film on the upper surface of the insulating substrate is removed by the polishing technique, the underlying electrode film is formed by using a resist pattern that regulates the region where the underlying electrode film is formed, as in the prior art. It is possible to omit a troublesome process, simplify the manufacturing process of the base electrode film, and significantly shorten the manufacturing time of the base electrode film.

As described above, since the manufacturing process of the solder bump connecting element can be simplified and the manufacturing time can be shortened, the solder bump connecting element can be efficiently manufactured, which allows the price of the solder bump connecting element to be improved. And it is possible to provide an inexpensive solder bump connection element.

[Brief description of drawings]

FIG. 1 is an explanatory view showing an example of a solder bump connecting element according to the present invention in which a solder bump portion is extracted.

FIG. 2 is an explanatory diagram showing an example of a method of manufacturing a solder bump connection element by extracting a solder bump portion.

FIG. 3 is an explanatory diagram showing an example of a solder bump connection element according to the present invention.

FIG. 4 is an explanatory diagram showing a conventional example of a solder bump portion of a solder bump connecting element.

[Explanation of symbols]

1 element formation substrate 2 insulating substrate 3 Solder bump 4 connection 5 through holes 8 Base electrode film

─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-4-94131 (JP, A) JP-A-2-52436 (JP, A) JP-A-6-13382 (JP, A) (58) Field (Int.Cl. ⁷ , DB name) H01L 21/60 311 H01L 21/60

Claims (2)

(57) [Claims] 1. An element forming substrate on which an element is formed is formed with a connecting portion for connecting to the element, and an insulating substrate is joined on the element forming substrate, and an upper surface of the insulating substrate corresponding to the connecting portion. In a method of manufacturing a solder bump connecting element, wherein an opening is formed in the insulating substrate and a through hole reaching the connecting portion from the opening is formed in the insulating substrate, first, an element forming substrate in which the element and the connecting portion are formed. An insulating substrate having a through hole formed therein is joined to the through hole by aligning the connection portion, and then a material for the base electrode film is attached by a film forming technique to form at least the upper surface of the insulating substrate and the connection portion. A conductive film is formed on the upper surface, and then the conductive film on the upper surface of the insulating substrate is completely removed to form a base electrode film on the upper surface of the connection portion. solder The material is melted to form a solder bump, and the solder bump is projected to the upper side of the insulating substrate.
A method for manufacturing a solder bump connecting element, which comprises joining a solder bump and a base electrode film on the upper surface of a connecting portion. 2. A method for producing a solder bump connection element according to claim 1, wherein the wherein a conductive film on the upper surface of the insulating substrate is removed all the polishing technique.