JP5538989B2 - Light emitting diode structure - Google Patents

Light emitting diode structure Download PDF

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JP5538989B2
JP5538989B2 JP2010095086A JP2010095086A JP5538989B2 JP 5538989 B2 JP5538989 B2 JP 5538989B2 JP 2010095086 A JP2010095086 A JP 2010095086A JP 2010095086 A JP2010095086 A JP 2010095086A JP 5538989 B2 JP5538989 B2 JP 5538989B2
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chip
light emitting
emitting diode
light
diode structure
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JP2010226118A (en
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李曉喬
謝忠全
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Everlight Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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Description

本発明は発光ダイオード構造に関し、特に効果的に放熱可能なＲＧＢ混色型発光ダイオードに関する。   The present invention relates to a light emitting diode structure, and more particularly to an RGB mixed color light emitting diode capable of effectively dissipating heat.

従来のＲＧＢ混色型発光ダイオードは通常、異なる波長光を発生可能な複数の発光チップと、対応する発光チップにそれぞれ電気的に接続されている複数のフレームユニットとを備えている。このうち、前記フレームユニットの各々はいずれも金属材質製の導電性フレームを備えており、このうち導電性フレームは対応する発光チップの固定に供されるとともに、発光チップで生じた熱を空気中に伝えて放熱させる。   Conventional RGB color mixing type light emitting diodes usually include a plurality of light emitting chips capable of generating light of different wavelengths and a plurality of frame units respectively electrically connected to the corresponding light emitting chips. Among these, each of the frame units is provided with a conductive frame made of a metal material. Among these, the conductive frame is used for fixing a corresponding light emitting chip, and heat generated in the light emitting chip is transmitted in the air. Let the heat dissipate.

しかしながら、この種の発光ダイオードは長時間使用したときに大量の熱エネルギーを生じ、このときにもし大部分の熱を効果的に放熱することができないとなれば、発光チップの過熱によりその発光効率の低下を招きやすい。   However, this type of light-emitting diode generates a large amount of heat energy when used for a long time, and if the majority of the heat cannot be effectively dissipated at this time, the light-emitting chip is overheated and its luminous efficiency is increased. It is easy to invite a decline.

したがって、この種の発光ダイオードにとって、如何に効果的に放熱を行い、発光チップの発光効率を維持するか、ということは解決が待たれる課題であった。   Therefore, for this type of light emitting diode, how to effectively dissipate heat and maintain the light emission efficiency of the light emitting chip has been a problem to be solved.

よって、本発明の目的は、効果的に放熱可能な発光ダイオード構造を提供することにある。   Accordingly, an object of the present invention is to provide a light emitting diode structure capable of effectively dissipating heat.

上記目的によれば、本発明の発光ダイオード構造は、発光チップ組と、三つのフレームユニットと、封止体とを備えている。前記発光チップ組は赤色光を発生可能な第１のチップと、緑色光を発生可能な第２のチップと、青色光を発生可能な第３のチップとからなる。前記フレームユニットの各々は導電性材質製であり、しかも対応するチップにそれぞれ電気的に接続されるとともに、各フレームユニットはいずれも、間隔を持っている第１の導電性フレームと第２の導電性フレームとを備え、このうち、前記第１の導電性フレームの各々は対応するチップの固定に供される載置部と、前記載置部の異なる側に間隔を持って突設されている少なくとも二つの放熱部とを有するとともに、前記第１の導電性フレームの各々における前記複数の放熱部の合計面積が前記第２の導電性フレームの各々の面積以上となっており、これにより放熱面積を広くしている。   According to the above object, the light emitting diode structure of the present invention includes a light emitting chip set, three frame units, and a sealing body. The light emitting chip set includes a first chip capable of generating red light, a second chip capable of generating green light, and a third chip capable of generating blue light. Each of the frame units is made of a conductive material, and is electrically connected to a corresponding chip. Each frame unit has a first conductive frame and a second conductive frame that are spaced apart from each other. Of these, each of the first conductive frames is provided with a mounting portion provided for fixing the corresponding chip and protruding on a different side of the mounting portion with a gap. And a total area of the plurality of heat dissipation portions in each of the first conductive frames is equal to or greater than an area of each of the second conductive frames. Is wide.

前記封止体は前記発光チップ組および前記フレームユニットの各々の一部を被覆している。   The sealing body covers a part of each of the light emitting chip set and the frame unit.

図１は、本発明の発光ダイオード構造の好ましい実施例を説明するための側面図である。FIG. 1 is a side view for explaining a preferred embodiment of the light emitting diode structure of the present invention. 図２は、前記好ましい実施例の四つのフレームユニットを説明するための不完全な平面図である。FIG. 2 is an incomplete plan view for explaining the four frame units of the preferred embodiment. 図３は、前記好ましい実施例の配置関係を説明するための平面図である。FIG. 3 is a plan view for explaining the positional relationship of the preferred embodiment.

本発明における上述およびその他技術内容、特徴および効果に関しては、以下の図面を合わせた好ましい一実施例の詳細な説明において明示されている。   The above-described and other technical contents, features, and effects of the present invention will be clarified in the detailed description of a preferred embodiment in conjunction with the following drawings.

本発明の発光ダイオード構造の好ましい実施例を示す図１、図２、図３を参照されたい。これには、発光チップ組１と、四つのフレームユニット２と、封止体３とが備えられている。本実施例において、本発明の発光ダイオード構造はＲＧＢ混色型発光ダイオードを例として説明しているが、この発光ダイオード構造はハイパワー発光ダイオードまたはレーザダイオードなどに実施しても良い。   Please refer to FIG. 1, FIG. 2 and FIG. 3 showing a preferred embodiment of the light emitting diode structure of the present invention. This includes a light emitting chip set 1, four frame units 2, and a sealing body 3. In this embodiment, the light emitting diode structure of the present invention is described by taking an RGB mixed color light emitting diode as an example, but this light emitting diode structure may be implemented in a high power light emitting diode or a laser diode.

発光チップ組１は赤色光を発生可能な第１のチップ１１と、緑色光を発生可能な二つの第２のチップ１２と、青色光を発生可能な第３のチップ１３とを備えている。   The light emitting chip set 1 includes a first chip 11 that can generate red light, two second chips 12 that can generate green light, and a third chip 13 that can generate blue light.

本実施例において、第１のチップ１１は赤色光のダイオードチップであり、第２のチップ１２は緑色光のダイオードチップであり、第３のチップ１３は青色光のダイオードチップである。   In this embodiment, the first chip 11 is a red light diode chip, the second chip 12 is a green light diode chip, and the third chip 13 is a blue light diode chip.

本実施例において、フレームユニット２は例えば銀、銅、銅合金、銀銅合金、アルミニウム、アルミニウム合金または金もしくは銀めっき層を有する金属材料または以上の材質の任意の組み合わせなどである、導電性材質製である。   In this embodiment, the frame unit 2 is, for example, a conductive material such as silver, copper, copper alloy, silver-copper alloy, aluminum, aluminum alloy, a metal material having gold or a silver plating layer, or any combination of the above materials. It is made.

前記フレームユニット２の各々は対応するチップにそれぞれ電気的に接続されるとともに、各フレームユニット２はいずれも、間隔を持っている第１の導電性フレーム２１と第２の導電性フレーム２２を備え、すなわち、第１および第２の導電性フレームは例えば一組のボンディングワイヤ２３を介して対応するチップに電気的に接続されている。   Each of the frame units 2 is electrically connected to a corresponding chip, and each of the frame units 2 includes a first conductive frame 21 and a second conductive frame 22 that are spaced from each other. That is, the first and second conductive frames are electrically connected to corresponding chips via a pair of bonding wires 23, for example.

前記第１の導電性フレーム２１の各々は対応するチップの固定に供される載置部２１１と、載置部２１１の異なる側に間隔を持って突設されている少なくとも二つの放熱部２１２とを備えている。   Each of the first conductive frames 21 includes a mounting portion 211 that is used for fixing a corresponding chip, and at least two heat dissipation portions 212 that protrude from the different sides of the mounting portion 211 with a gap therebetween. It has.

前記第１の導電性フレーム２１の各々における前記複数の放熱部２１２の合計面積が、フレームユニット２の放熱面積を広げるために、前記第２の導電性フレーム２２の各々の面積以上であり、これにより発光チップ組１にて生じた熱エネルギーが第１の導電性フレーム２１の載置部２１１と放熱部２１２とを効果的に経由して空気中に放熱される。   The total area of the plurality of heat radiation portions 212 in each of the first conductive frames 21 is equal to or larger than the area of each of the second conductive frames 22 in order to increase the heat radiation area of the frame unit 2. Thus, the heat energy generated in the light emitting chip set 1 is radiated into the air through the mounting portion 211 and the heat radiating portion 212 of the first conductive frame 21 effectively.

より好ましくは、前記複数の放熱部２１２および第２の導電性フレーム２２の合計面積を、発光ダイオードの全体構造の横方向断面積よりも概ね狭く設計することで、空間を効率的に利用するのみならず、放熱の効果を確実に達成することができる。   More preferably, the total area of the plurality of heat dissipating parts 212 and the second conductive frame 22 is designed to be narrower than the cross-sectional area in the lateral direction of the entire structure of the light emitting diode, so that only space is efficiently used. In other words, the effect of heat dissipation can be reliably achieved.

本実施例において、発光チップ組１の第２のチップ１２の個数は二つであり、第１のチップ１１および第３のチップ１３の個数は一つであって、対応するフレームユニット２の個数は四つである。   In the present embodiment, the number of the second chips 12 in the light emitting chip set 1 is two, the number of the first chips 11 and the third chips 13 is one, and the number of the corresponding frame units 2. There are four.

しかし設計の要求に応じて各種チップの個数および対応するフレームユニット２の個数を増やしてもよい。これにより発光ダイオードの混色後の色を変化させることができる。   However, the number of various chips and the number of corresponding frame units 2 may be increased according to design requirements. Thereby, the color after color mixing of the light emitting diode can be changed.

また、本実施例における第１の導電性フレーム２１の各々の放熱部２１２の個数を二つと例示しているが、設計の要求に応じて放熱部２１２の個数を増やして、空間を効率的に利用してもよい。   In addition, although the number of the heat radiating portions 212 of each of the first conductive frames 21 in the present embodiment is illustrated as two, the number of the heat radiating portions 212 is increased according to the design requirement, so that the space can be efficiently made. May be used.

封止体３は、発光チップ組１をフレームユニット２上に固定するために、発光チップ組１および前記フレームユニット２の各々の一部を被覆している。本実施例において、封止体３は例えばエポキシ樹脂といった樹脂材質により製造されている。   The sealing body 3 covers a part of each of the light emitting chip set 1 and the frame unit 2 in order to fix the light emitting chip set 1 on the frame unit 2. In this embodiment, the sealing body 3 is made of a resin material such as an epoxy resin.

上記をまとめると、第１の導電性フレームの放熱部および放熱面積を拡大することで、発光チップで生じた熱エネルギーを効果的に放熱することができるので、放熱効果に優れ、応用性が高く、本発明の発案目的を確実に達成することができる。   Summing up the above, it is possible to effectively dissipate the heat energy generated in the light emitting chip by expanding the heat dissipating part and heat dissipating area of the first conductive frame. Thus, the object of the present invention can be reliably achieved.

本発明では確かに上記の好ましい実施例により詳細な説明を行ったが、これは本発明の好ましい実施例のためであり、これにより本発明の実施の範囲を限定することはできず、およそ本発明の実用新案登録請求の範囲および明細書の内容に基づいて行う簡単な均等的な変更および付加は、いずれも本実用新案の範囲に含まれるものである。   Although the present invention has been described in detail with reference to the above preferred embodiment, this is only for the preferred embodiment of the present invention, and thus the scope of the present invention cannot be limited. Any simple equivalent changes and additions made on the basis of the claims of the utility model registration of the invention and the contents of the description are included in the scope of the utility model.

１…発光チップ組、１１…第１のチップ、１２…第２のチップ、１３…第３のチップ、２…フレームユニット、２１…第１の導電性フレーム、２１１…載置部、２１２…放熱部、２２…第２の導電性フレーム、２３…ボンディングワイヤ、３…封止体 DESCRIPTION OF SYMBOLS 1 ... Light emitting chip group, 11 ... 1st chip, 12 ... 2nd chip, 13 ... 3rd chip, 2 ... Frame unit, 21 ... 1st electroconductive frame, 211 ... Mounting part, 212 ... Heat dissipation Part, 22 ... second conductive frame, 23 ... bonding wire, 3 ... sealing body

Claims (5)

赤色光を発生可能な第１のチップと、緑色光を発生可能な第２のチップと、青色光を発生可能な第３のチップと、光を発生可能な第４のチップとからなる発光チップ組を備えた発光ダイオード構造であって、
前記第１〜第４のチップをそれぞれ保持する第１〜第４の金属製フレームユニットであって、これら第１〜第４の各金属製フレームユニットは前記発光ダイオード構造の中央部の周りに周方向に均等に配置され、前記各金属フレームユニットは、前記チップを発光ダイオード構造の中央部に近い位置に保持すると共にこのチップと電気的に接続された第１の導電性フレームと、この第１の導電性フレームと絶縁されかつ上記チップと導電的に接続された第２の導電性フレームを備える、第１〜第４の金属製フレームユニットを備え、
前記第１〜第４の各金属製フレームユニットは、前記第１の導電性フレームが上記中央部から離れた側の端部に互いに間隔を持って突設されていた少なくとも二つの放熱部を有し、かつ、この二つの放熱部の合計面積が前記第２の導電性フレームの面積以上となっており、
この発光ダイオード構造は、前記発光チップ組および前記導電性フレームの各々の一部を被覆している封止体をさらに備えている
ことを特徴とする発光ダイオード構造。 A light-emitting chip comprising a first chip capable of generating red light, a second chip capable of generating green light, a third chip capable of generating blue light, and a fourth chip capable of generating light A light emitting diode structure comprising a set,
1st to 4th metal frame units respectively holding the 1st to 4th chips, and each of the 1st to 4th metal frame units is arranged around a central portion of the light emitting diode structure. The metal frame units are equally arranged in directions, and each metal frame unit holds the chip at a position close to a central portion of the light emitting diode structure and is electrically connected to the chip, and the first conductive frame. Comprising first to fourth metal frame units, each comprising a second conductive frame insulated from the conductive frame and electrically connected to the chip;
Each of the first to fourth metal frame units has at least two heat dissipating portions in which the first conductive frame protrudes from the end portion on the side away from the central portion with a gap therebetween. And the total area of these two heat dissipating parts is not less than the area of the second conductive frame,
The light emitting diode structure further includes a sealing body that covers a part of each of the light emitting chip set and the conductive frame. 前記第１の導電性フレームと第２の導電性フレームの各々が一組のボンディングワイヤを介して前記対応するチップに電気的に接続されていることを特徴とする請求項１に記載の発光ダイオード構造。   2. The light emitting diode according to claim 1, wherein each of the first conductive frame and the second conductive frame is electrically connected to the corresponding chip through a pair of bonding wires. Construction. 前記第１のチップが赤色光ダイオードチップであり、前記第２のチップが緑色光ダイオードチップであり、前記第３のチップが青色光ダイオードチップである、ことを特徴とする請求項１に記載の発光ダイオード構造。   The first chip is a red photodiode chip, the second chip is a green photodiode chip, and the third chip is a blue photodiode chip. Light emitting diode structure. 前記複数の導電性フレームが銀、銅、銅合金、銀銅合金、アルミニウム、アルミニウム合金または金もしくは銀めっき層を有する金属材料または以上の材質の任意の組み合わせであることを特徴とする請求項１に記載の発光ダイオード構造。   2. The plurality of conductive frames are silver, copper, copper alloy, silver-copper alloy, aluminum, aluminum alloy, a metal material having gold or a silver plating layer, or any combination of the above materials. The light-emitting diode structure as described in 1. 前記封止体がエポキシ樹脂材質製であることを特徴とする請求項１に記載の発光ダイオード構造。   The light emitting diode structure according to claim 1, wherein the sealing body is made of an epoxy resin material.
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