TWM315886U - Light emitting diode structure - Google Patents

Light emitting diode structure Download PDF

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Publication number
TWM315886U
TWM315886U TW095223041U TW95223041U TWM315886U TW M315886 U TWM315886 U TW M315886U TW 095223041 U TW095223041 U TW 095223041U TW 95223041 U TW95223041 U TW 95223041U TW M315886 U TWM315886 U TW M315886U
Authority
TW
Taiwan
Prior art keywords
wafer
light
emitting diode
conductive support
diode structure
Prior art date
Application number
TW095223041U
Other languages
Chinese (zh)
Inventor
Hsiao-Chiao Li
Chung-Chuan Hsieh
Original Assignee
Everlight Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Everlight Electronics Co Ltd filed Critical Everlight Electronics Co Ltd
Priority to TW095223041U priority Critical patent/TWM315886U/en
Priority to JP2007002739U priority patent/JP3133192U/en
Publication of TWM315886U publication Critical patent/TWM315886U/en
Priority to JP2010095086A priority patent/JP5538989B2/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Led Device Packages (AREA)

Description

M315886 八、新型說明: 【新型所屬之技術領域】 本新型是關於一種發光二極體結構,特別是指一種可 有效散熱的RGB混光發光二極體結構。 【先前技術】 , 現有的RGB混光發光二極體通常包括:多數可產生不 ‘同波長光線的發光晶片,及多數分別與對應之發光晶片形 鲁 成電性連接的支架單元。其中,各該支架單元皆具有二由 金屬材質製成的導電支架’其中一導電支架係供對應的發 光晶片固;並可將發光晶片所產生的熱能傳導溢散於空 氣中。 然而,由於該種發光二極體於長時間應用時會產生大 量的熱能,此時若大多數熱能無法即時有效排出,發光晶 片將極易因過熱而降低其發光效率。 因此’就該種發光二極體士 々 聪而5,如何有效散熱以維持 七光晶片的發光效率,為—待解決的課題。 【新型内容】 即在提供一種可有效散熱的發 因此,本新型之目的 光二極體結構。 根據上述目的 片組、三支架單元 可產生紅光的第一 以及一封裝體。該發光晶片 片、一可產生綠光的第二曰 組包括一 片,以及 5 M315886 可產生藍光的第三晶片。各該支架單元由導電材質所製 成,並分別與對應的晶片形成電性連接,且每一支牟單元 皆包括相間隔的一第一導電支架與一第二導,立 各該第-導電支架具有_供對應之晶片固定的承載 和及至間隔凸設於該承載部不同側的散熱部,並且 各該第-導電支架之該等散熱部之總合面積不小於各該第 二導電支架的面積,藉此增加散熱面積。該封裝體包覆該 發光晶片組及各該支架單元的一部分。 【實施方式】 有關本新型之前述及其他技術内容、特點與功效,在 以下配合參考圖式之一個較佳實施例的詳細說明中,將可 清楚的呈現。 參閱第丄圖、第2目、第30,係繪示本新型發光二 極體結構之一較佳實施例,其包含:一發光晶片組、、四支 架單元2,以及一封裝體3。在本實施例中,本新型發光二 籲極體結構係以RGB混光發光二極體為例作說明,然該發光 二極體結構亦可以實施於高功率發光二極體或雷射二極體 等。 發光晶片組1包括一可產生紅光的第一晶片Η、二可 產生綠光的第二晶片12,以及一可產生藍光的第三晶片 13。在本實施例中,第一晶片11即紅光二極體晶片;第二 晶片12即綠光二極體晶片;第三晶片13即藍光二極體晶 M315886 在本實施例中,支架單元2 *由導電質点 銀、銅、鋼人厶如加人a 貝厅t成,如 層的金屬材:ΐ 銘、,合金或具有金或銀鍍 一至屬材枓或以上㈣的任意組合等。各該支 /刀別與對應的晶片形成電性連接,且每—支架單 比 括相間隔的一第一導電支架盥 70白匕 又木Zi兴 弟二導電Φ牟? 〇·曰η 第一與第二導電支架經由例如一蹊 應的晶片電性連接。 屬電極線路33而與對M315886 VIII. New description: [New technical field] The present invention relates to a light-emitting diode structure, in particular to an RGB mixed light-emitting diode structure which can effectively dissipate heat. [Prior Art] The conventional RGB light-mixing light-emitting diodes generally include: a plurality of light-emitting chips which can generate light of the same wavelength, and a plurality of bracket units which are electrically connected to the corresponding light-emitting wafers, respectively. Each of the bracket units has two conductive supports made of a metal material. One of the conductive supports is fixed for the corresponding light-emitting chip; and the heat energy generated by the light-emitting chip can be conducted and vented in the air. However, since such a light-emitting diode generates a large amount of heat energy when used for a long period of time, if most of the heat energy cannot be effectively and efficiently discharged at this time, the light-emitting crystal chip is liable to lower its luminous efficiency due to overheating. Therefore, it is a problem to be solved by how to effectively dissipate heat to maintain the luminous efficiency of a seven-light wafer. [New content] It is to provide a light-emitting diode structure which is effective for heat dissipation. According to the above object, the sheet group and the three-bracket unit can generate the first and a package of red light. The illuminating wafer, a second stack that produces green light includes a sheet, and a 5 M315886 third wafer that produces blue light. Each of the bracket units is made of a conductive material and electrically connected to the corresponding wafer, and each of the support units includes a first conductive support and a second guide spaced apart from each other. The bracket has a heat-receiving portion for the corresponding wafer to be fixed and a heat-dissipating portion that is spaced apart from the different sides of the bearing portion, and the total area of the heat-dissipating portions of each of the first-conductive brackets is not less than that of each of the second conductive brackets Area, thereby increasing the heat dissipation area. The package encases the illuminating wafer set and a portion of each of the cradle units. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. Referring to Figures, 2, and 30, a preferred embodiment of the novel light emitting diode structure includes a light emitting chip set, a four-frame unit 2, and a package 3. In this embodiment, the illuminating two-element body structure is exemplified by an RGB mixed light-emitting diode, and the LED structure can also be implemented in a high-power light-emitting diode or a laser diode. Body and so on. The illuminating wafer set 1 comprises a first wafer 可 which produces red light, a second wafer 12 which produces green light, and a third wafer 13 which produces blue light. In this embodiment, the first wafer 11 is a red diode wafer; the second wafer 12 is a green diode wafer; and the third wafer 13 is a blue diode crystal M315886. In this embodiment, the bracket unit 2 * From the conductive dots silver, copper, steel, such as the addition of a shell, such as the layer of metal: 铭 ming, alloy or gold or silver plated to the 枓 or any combination of the above (four). Each of the branches/knifes is electrically connected to the corresponding wafer, and each of the brackets is separated by a first conductive bracket 盥 70 white and a wooden Zi Xing Di two conductive Φ 牟? The first and second conductive supports are electrically connected via, for example, a corresponding wafer. Is the electrode line 33 and the pair

,"ΓΓ 架21具有一供對應之晶片固定的承載 212夂’及至少二間隔凸設於承載部叫不同側的散熱部 。各該第-導電支架21之該等散熱部212之總合面積 不小於各該第二導電支架22的面積,用以增加支架單元2 散熱面積’藉此可使發光晶片組/所產生的熱能能有效唾 由第一導電支架21的承載部211與散熱部212進而溢 空氣中。較佳的’該等散熱部212與第二導電支架22的總 σ面積可没si·略小於發光二極體整體結構的橫向截面積, 不僅能有效利用空間,更可確實達到散熱的效果。 在本實施例中,發光晶片組1的第二晶片u的數量為 一 ’第一晶片12與第三晶片13的數量為一,對應的支架 單元2數篁為四’然亦可以依設計需求而增加各種晶片的 數量以及對應的支架單元2的數量,藉此改變發光二極體 結構混光後的顏色。又,本實施例之各第一導電支架2丨之 散熱部2 12的數量是以二為例,然亦可依設計需求而增加 散熱部212的數量,以有效利用空間。 封裝體3係包覆於發光晶片組1及各該支架單元2的 7 M315886 一部分’用以將發光晶片組1固定於支架單元2 ―卜 工。在本 貫施例中,封裝體3是由樹脂材質如環氧樹脂所製成。 歸納上述,藉由增加第一導電支架、的散熱部及散熱面 積,將可有效使發光晶片組所產生的熱能排出,散熱Z果 佳且應用性好,確實達到本新型之創作目的。 本新型雖已藉由上述較佳實施例加以詳細說明,惟以 域述者,僅為本新型之較佳實施例*已,t不能以此限 疋本新型實施之範圍’即大凡依本新型中請專利範圍及新 型說:内容所作簡單的等效變化與修飾,皆仍屬本新型專 利涵蓋之範圍内。 【圖式簡單說明】 苐1圖係繪示一側視圖,兮明士 %明本新型發光二極體結構 之一較佳實施例; 第2圖係繪示一未完整的 ^丄 俯視圖,說明該較佳實施例 之四支架單元;以及 係 第3圖係繪示一俯視圖,說明該較佳實施例 之配置關 【主要元件符號說明】 ………發光晶片組 M315886 2………·…支架單元 21 .......…·第一導電支架 2 11........承載部 212………·散熱部 22 -.........第二導電支架 23 ·金屬電極線路 3 ...........封裝體The truss 21 has a carrier 212 夂 ′ for the corresponding wafer and at least two spaced heat dissipation portions on the different sides of the carrier. The total area of the heat dissipating portions 212 of each of the first conductive brackets 21 is not less than the area of each of the second conductive brackets 22 for increasing the heat dissipating area of the bracket unit 2, thereby enabling the illuminating chip set/heat energy generated. The load-bearing portion 211 and the heat-dissipating portion 212 of the first conductive support 21 can be effectively spilled into the air. Preferably, the total σ area of the heat dissipating portion 212 and the second conductive support 22 is not slightly smaller than the transverse cross-sectional area of the overall structure of the light-emitting diode, and the space can be effectively utilized, and the heat dissipation effect can be surely achieved. In this embodiment, the number of the second wafers u of the light-emitting chip group 1 is one, the number of the first wafers 12 and the third wafers 13 is one, and the number of the corresponding bracket units 2 is four, but the design requirements can also be The number of various wafers and the number of corresponding holder units 2 are increased, thereby changing the color of the light-emitting diode structure after light mixing. Moreover, the number of the heat dissipating portions 2 12 of each of the first conductive holders 2 in the present embodiment is two. However, the number of the heat dissipating portions 212 may be increased according to design requirements to effectively utilize the space. The package 3 is wrapped around the illuminating wafer set 1 and a portion 7 M315886 of each of the cradle units 2 for fixing the luminescent wafer set 1 to the cradle unit 2 . In the present embodiment, the package 3 is made of a resin material such as an epoxy resin. In summary, by adding the first conductive support, the heat dissipating portion and the heat dissipating surface, the heat energy generated by the illuminating chip group can be effectively discharged, and the heat dissipating Z is good and the applicability is good, which truly achieves the creative purpose of the present invention. Although the present invention has been described in detail by the above-described preferred embodiments, it is only the preferred embodiment of the present invention, and t cannot be limited to the scope of the present invention. The patent scope and new type of claim: the simple equivalent changes and modifications of the content are still covered by the new patent. [Simple diagram of the diagram] 苐1 diagram shows a side view, 兮明士% Ming this new type of light-emitting diode structure is a preferred embodiment; Figure 2 shows an incomplete top view, illustrating The fourth bracket unit of the preferred embodiment; and the third drawing shows a top view illustrating the configuration of the preferred embodiment. [Main component symbol description] ... illuminating chip set M315886 2............... bracket Unit 21 ........... First conductive support 2 11........bearing portion 212 ..... heat sink portion 22 - ......... second conductive bracket 23 ·Metal electrode line 3 ........... package

Claims (1)

M315886 九、申請專利範圍·· 1、一種發光二極體結構,包含: 一發光晶片組,包括一 產生綠光的第二晶片 紅光的第-晶片、一可 三支架單元:可產生藍光的第三晶片; 與對應的晶片形成電性,支架單元分別 p ^ ^ m 母一支架單元皆包括相間 ^的一弟一導電支架盥一 π 導電支架具有-供對^ ί電支H中,各該第— ^ Π ’、、Μ之日日片固定的承载部,及至少二間 隔凸a又於s亥承载部 U側的放熱部,並且各該第一導電支 木之ό亥等散熱部之始人 & — 〜^面積不小於各該第二導電支架的面 積’猎此增加散熱面積;以及 一封裝體,舍薄#义 设忒^光晶片組及各該支架單元的一部 分0 苴中,依據★申請專利範圍第1項所述之發光二極體結構, 各該第一導電支架與第二導電支架係經由一組金屬 電極線路而與該對應的晶片電性連接。 豆3依據申請專利範圍第i項所述之發光二極體結構, /、中。亥第一晶片為紅光二極體晶片,該第二晶片是綠光 二極體晶片,兮错一。 為弟二晶片是藍光二極體晶片。 4依據申請專利範圍第1項所述之發光二極體結構, 該等導電支牟i & i 木』馮銀、銅、鋼合金、銀鋼合金、鋁、鋁合 M315886 金或具有金或銀鐘層的金屬材料或以上材質的任意組合。 5、依據申請專利範圍第1項所述之發光二極體結構, 其中,該封裝體是由環氧樹脂材質所製成。 11M315886 IX. Patent Application Range 1. A light-emitting diode structure comprising: an illuminating chip set comprising a first wafer of red light emitting a green light, a three-branch unit: capable of generating blue light a third wafer; forming electrical properties with the corresponding wafer, the support unit is respectively p ^ ^ m, the mother and the support unit each include a phase-to-one conductor, a conductive support, a π-conductive support, and a plurality of The first - Π ', Μ Μ 日 日 日 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定 固定The beginning of the person & - ^ ^ area is not less than the area of each of the second conductive support 'hunting this increase heat dissipation area; and a package, thin thin set of light and a part of each of the support unit 0 苴The first conductive support and the second conductive support are electrically connected to the corresponding wafer via a set of metal electrode lines, in accordance with the light-emitting diode structure of the first application. Bean 3 is based on the structure of the light-emitting diode described in item i of the patent application scope, /, medium. The first wafer is a red photodiode wafer, and the second wafer is a green photodiode wafer. The second wafer is a blue LED wafer. 4 According to the light-emitting diode structure described in claim 1, the conductive support i & i wood von silver, copper, steel alloy, silver steel alloy, aluminum, aluminum alloy M315886 gold or with gold or Metal material of the silver clock layer or any combination of the above materials. 5. The light-emitting diode structure according to claim 1, wherein the package is made of an epoxy resin material. 11
TW095223041U 2006-12-28 2006-12-28 Light emitting diode structure TWM315886U (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
TW095223041U TWM315886U (en) 2006-12-28 2006-12-28 Light emitting diode structure
JP2007002739U JP3133192U (en) 2006-12-28 2007-04-17 Light emitting diode structure
JP2010095086A JP5538989B2 (en) 2006-12-28 2010-04-16 Light emitting diode structure

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Application Number Priority Date Filing Date Title
TW095223041U TWM315886U (en) 2006-12-28 2006-12-28 Light emitting diode structure

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TWM315886U true TWM315886U (en) 2007-07-21

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Publication number Priority date Publication date Assignee Title
TWM329244U (en) * 2007-10-01 2008-03-21 Everlight Electronics Co Ltd Light emitting diode device
KR101823506B1 (en) 2011-06-29 2018-01-30 엘지이노텍 주식회사 Light emitting device and light unit having thereof

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JPH04137772A (en) * 1990-09-28 1992-05-12 Sharp Corp Trichromatic element and display apparatus
JPH06310763A (en) * 1993-04-21 1994-11-04 Sanyo Electric Co Ltd Led lamp
JPH073155U (en) * 1993-06-15 1995-01-17 スタンレー電気株式会社 LED lamp
JP2001518692A (en) * 1997-07-29 2001-10-16 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー オッフェネ ハンデルスゲゼルシャフト Photoelectric element
JP3472450B2 (en) * 1997-09-04 2003-12-02 シャープ株式会社 Light emitting device
JP2000294831A (en) * 1999-04-08 2000-10-20 Omron Corp Semiconductor light emitting device, array thereof, photosensor, and photosensor array
JP2006313943A (en) * 2003-02-18 2006-11-16 Sharp Corp Semiconductor light emitting device, manufacturing method thereof, and electronic imaging device
JP4902114B2 (en) * 2004-12-16 2012-03-21 日亜化学工業株式会社 Light emitting device
JP4542453B2 (en) * 2005-03-24 2010-09-15 日亜化学工業株式会社 Light emitting device

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JP3133192U (en) 2007-07-05
JP5538989B2 (en) 2014-07-02
JP2010226118A (en) 2010-10-07

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