JP5517826B2 - 真空処理装置およびプラズマ処理方法 - Google Patents

真空処理装置およびプラズマ処理方法 Download PDF

Info

Publication number
JP5517826B2
JP5517826B2 JP2010182563A JP2010182563A JP5517826B2 JP 5517826 B2 JP5517826 B2 JP 5517826B2 JP 2010182563 A JP2010182563 A JP 2010182563A JP 2010182563 A JP2010182563 A JP 2010182563A JP 5517826 B2 JP5517826 B2 JP 5517826B2
Authority
JP
Japan
Prior art keywords
substrate
ridge
chamber
plasma
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010182563A
Other languages
English (en)
Japanese (ja)
Other versions
JP2012043908A5 (cg-RX-API-DMAC10.html
JP2012043908A (ja
Inventor
英四郎 笹川
良昭 竹内
直之 宮園
栄一郎 大坪
禎子 中尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Heavy Industries Ltd
Original Assignee
Mitsubishi Heavy Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Heavy Industries Ltd filed Critical Mitsubishi Heavy Industries Ltd
Priority to JP2010182563A priority Critical patent/JP5517826B2/ja
Publication of JP2012043908A publication Critical patent/JP2012043908A/ja
Publication of JP2012043908A5 publication Critical patent/JP2012043908A5/ja
Application granted granted Critical
Publication of JP5517826B2 publication Critical patent/JP5517826B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010182563A 2010-08-17 2010-08-17 真空処理装置およびプラズマ処理方法 Active JP5517826B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010182563A JP5517826B2 (ja) 2010-08-17 2010-08-17 真空処理装置およびプラズマ処理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010182563A JP5517826B2 (ja) 2010-08-17 2010-08-17 真空処理装置およびプラズマ処理方法

Publications (3)

Publication Number Publication Date
JP2012043908A JP2012043908A (ja) 2012-03-01
JP2012043908A5 JP2012043908A5 (cg-RX-API-DMAC10.html) 2013-08-29
JP5517826B2 true JP5517826B2 (ja) 2014-06-11

Family

ID=45899898

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010182563A Active JP5517826B2 (ja) 2010-08-17 2010-08-17 真空処理装置およびプラズマ処理方法

Country Status (1)

Country Link
JP (1) JP5517826B2 (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120225204A1 (en) * 2011-03-01 2012-09-06 Applied Materials, Inc. Apparatus and Process for Atomic Layer Deposition
KR101959242B1 (ko) * 2018-10-02 2019-03-19 한국진공주식회사 항공, 자동차용 탄소섬유 복합재 절삭가공용 공구 나노다이아몬드 코팅 장치
WO2021095120A1 (ja) * 2019-11-12 2021-05-20 東芝三菱電機産業システム株式会社 活性ガス生成装置
KR102468140B1 (ko) * 2022-05-24 2022-11-18 (주)거성 교체가 용이한 증착장치용 일체화 실드
KR102808685B1 (ko) * 2022-08-19 2025-05-20 주식회사 에스지에스코리아 기판 처리 장치의 가스 매니폴드
CN116083885B (zh) * 2023-01-12 2025-03-25 苏州晟成光伏设备有限公司 一种稳定气流的等离子辅助氧化装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02149339A (ja) * 1988-11-30 1990-06-07 Toshiba Corp マイクロ波プラズマ処理装置
DE3912569A1 (de) * 1989-04-17 1990-10-18 Siemens Ag Verfahren und vorrichtung zur erzeugung eines elektrischen hochfrequenzfeldes in einem nutzraum
JP4302010B2 (ja) * 2004-07-14 2009-07-22 三菱重工業株式会社 プラズマ処理装置及びプラズマ処理方法
JP5517509B2 (ja) * 2009-07-08 2014-06-11 三菱重工業株式会社 真空処理装置
JP5199962B2 (ja) * 2009-08-05 2013-05-15 三菱重工業株式会社 真空処理装置

Also Published As

Publication number Publication date
JP2012043908A (ja) 2012-03-01

Similar Documents

Publication Publication Date Title
CN102959125B (zh) 真空处理装置及等离子体处理方法
JP6841920B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
CN100378900C (zh) 连续淀积系统
JP2012043908A (ja) 真空処理装置およびプラズマ処理方法
JP3179605U (ja) 基板支持体の加熱及び冷却
JP6418573B2 (ja) 処理モジュール
KR102311459B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법, 및 프로그램
JP7011033B2 (ja) 基板処理装置、半導体装置の製造方法およびプログラム
KR102224544B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
TWM581766U (zh) MOCVD reactor
KR102822702B1 (ko) 기판 처리 장치, 반도체 장치의 제조 방법 및 프로그램
US20110239937A1 (en) Apparatus and method for treating substrate
JPWO2019180966A1 (ja) 基板処理装置、半導体装置の製造方法及びプログラム
CN109312461B (zh) 等离子体处理装置和等离子体处理用反应容器的构造
JP2011035327A (ja) 真空処理装置
CN212770954U (zh) 一种预热型管式pecvd设备
JP5517827B2 (ja) 真空処理装置およびプラズマ処理方法
CN120608275A (zh) 一种大面积基板pecvd工艺沉积设备及其沉积方法
JP2008202146A (ja) 縦型化学気相成長装置及び該装置を用いた成膜方法
JP5622477B2 (ja) 真空処理装置
WO2011125470A1 (ja) プラズマ処理装置及びプラズマ処理方法
KR101651164B1 (ko) 기판처리시스템, 그에 사용되는 기판처리시스템의 공정모듈
KR102654241B1 (ko) 기판 프로세싱 시스템, 진공 프로세싱 시스템을 위한 기판 챔버, 및 기판을 냉각하는 방법
KR20140095557A (ko) 기판 처리 장치 및 반송 장치
JP5721362B2 (ja) 真空処理装置およびプラズマ処理方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130712

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20130712

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20140219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20140304

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20140401

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250