JP5511613B2 - Ceramic circuit board for probe card and probe card using the same - Google Patents

Description

  The present invention relates to a ceramic wiring board for a probe card provided with fine wiring for measuring electrical characteristics of a semiconductor wafer, and a probe card using the same.

  For semiconductor elements with large-scale integrated circuits that are simultaneously formed on a semiconductor wafer such as a Si wafer, a product with poor electrical connection and electrical characteristics at a substantially constant rate due to electrical failure due to adhesion of foreign matter, etc. It is included.

  As a device for detecting a defective product of the semiconductor element, a probe card capable of simultaneously inspecting electrical characteristics of a large number of semiconductor elements at the same time in a semiconductor wafer state is known (see, for example, Patent Document 1). ).

  This probe card has a wiring board in which fine wiring is formed on the main surface and inside of an insulating base made of an alumina sintered body, and a plurality of measuring terminals called probe pins arranged with high precision on the surface of the wiring board. By applying this probe pin to the terminals of many semiconductor elements, measuring the output when voltage is applied and comparing it with the expected value, it is possible to judge the quality of many semiconductor elements at once. To do.

  In recent years, with the miniaturization of the wiring of integrated circuits formed in semiconductor elements, it has been required to increase the number of probe pins per unit area of the probe card, and the wiring formed on the probe card ceramic wiring board is also more There is a demand for miniaturization.

  However, miniaturization of the wiring, that is, narrowing of the line width causes an increase in wiring resistance and delay of the electric signal, which makes it impossible to correctly determine the operation state of the integrated circuit, leading to a test error.

  Therefore, it is conceivable to use a low-resistance metal such as Cu, Ag, or Au as the wiring. However, since these low-resistance metals have a low melting point, simultaneous firing with the alumina sintered body cannot be performed with only the low-resistance metal.

  In contrast, the applicant of the present invention has a wiring mainly composed of a composite metal of a low-resistance metal such as Cu, Ag, Au and a refractory metal such as Mo, W inside an insulating base made of an alumina sintered body. A ceramic wiring board for a probe card in which is formed is proposed (see, for example, Patent Document 2).

  More specifically, this probe card ceramic wiring board includes 1500 Mn and Si as sintering aids, and is 1500 ° C. lower than a wiring board having a conventional insulating substrate made of an alumina sintered body by 200 ° C. or more. Since it can be fired at a temperature of less than or equal to ° C., it is possible to form a wiring containing the composite metal of the low resistance metal and the refractory metal as a main component by simultaneous firing.

However, the probe card ceramic wiring board in which the insulating base is formed of the alumina sintered body described in Patent Document 2 has a thermal expansion coefficient of 6 to 7 × that of the alumina sintered body. 10 ⁻⁶ / ° C.), the difference from the thermal expansion coefficient of the Si wafer to be inspected is large. Therefore, in the thermal load test (burn-in test) performed before measuring the electrical characteristics of the semiconductor element, the probe There is a problem in that the electrical characteristics cannot be inspected because the measurement terminals (probe pins) provided on the card ceramic wiring board are displaced from the positions of the measurement pads formed on the surface of the Si wafer.

  On the other hand, an attempt has been made to apply a mullite sintered body having a thermal expansion coefficient smaller than that of an alumina sintered body as an insulating base of the probe card wiring board (see, for example, Patent Document 3).

Japanese Patent Laid-Open No. 11-160356 JP 2009-180518 A JP 2010-93197 A

  Since the mullite sintered body described in Patent Document 3 is dense and has a thermal expansion coefficient closer to that of the semiconductor element (Si) than that of the alumina sintered body, the electrical characteristics of the semiconductor element are not measured. Although the misalignment between the measurement terminal provided on the probe card ceramic wiring board and the measurement pad formed on the surface of the Si wafer can be reduced in the thermal load test (burn-in test), The grain boundary of mullite particles, which are the main crystal particles, contains a large amount of glass phase mainly composed of silicon dioxide. During firing, the glass phase oozes onto the surface of the insulating substrate and reacts with the setter material for firing. A part of the material adheres to the surface of the probe card ceramic wiring board as a foreign matter, resulting in poor appearance and polishing in the subsequent formation process of the surface wiring layer Easily voids are formed on the substrate surface can, on the surface wiring layer formed to cover the void, a defect such as chipping due to voids are disadvantageously likely to occur.

  Accordingly, the present invention has been made in view of such circumstances, and at the time of a thermal load test, a measurement terminal provided on the probe card ceramic wiring board and a measurement pad formed on the surface of the Si wafer. It is an object of the present invention to provide a probe card ceramic wiring board with a small misalignment and very few appearance defects due to adhesion of foreign matter, and a probe card using the same.

A ceramic wiring board for a probe card according to the present invention includes an insulating base made of a sintered ceramic containing mullite as a main crystal phase and containing Mn, Ti and Mo, and a conductor layer provided in the insulating base. When the ceramic sintered body has a total amount of Al and Si contained in the ceramic sintered body converted to Al ₂ O ₃ and SiO ₂ as 100 parts by mass. The Mn is 2.0 to 4.0 parts by mass in terms of Mn ₂ O ₃ , the Ti is 4.0 to 8.0 parts by mass in terms of TiO ₂ , and the Mo is 0.4 to _{2 in} terms of MoO _3. It is characterized by containing 1 part by mass.

  In the probe card ceramic wiring board, the molar ratio of Mo to Ti (Mo / Ti) is preferably 0.125 to 0.25.

  In the probe card of the present invention, a surface wiring layer is provided on the surface of the above-described probe card ceramic wiring board, and a measurement terminal for measuring electrical characteristics of a semiconductor element is connected to the surface wiring layer. It is characterized by.

According to the present invention, there is provided a probe card ceramic wiring board having a coefficient of thermal expansion similar to that of Si and having very few appearance defects due to adhesion of foreign matters due to leaching of a glass phase during firing, and a probe card using the same. Can be obtained.

It is a schematic sectional drawing of one Embodiment of the ceramic wiring board for probe cards of this invention. It is explanatory drawing of the evaluation apparatus of the semiconductor element using one Embodiment of the probe card of this invention.

  An embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic cross-sectional view of one embodiment of a ceramic wiring board for a probe card of the present invention. A probe card ceramic wiring substrate 1 shown in FIG. 1 includes an insulating base 11 made of a ceramic sintered body, an internal wiring layer 12 formed inside the insulating base 11, and a surface wiring formed on the surface of the insulating base 11. And a via-hole conductor 14 that electrically connects the internal wiring layers 12 or the internal wiring layer 12 and the surface wiring layer 13 inside the insulating base 11.

  The insulating substrate 11 is composed of a plurality of ceramic insulating layers 11a, 11b, 11c, and 11d, and each ceramic insulating layer 11a, 11b, 11c, and 11d is formed of a ceramic sintered body containing mullite as a main component. Hereinafter, a ceramic sintered body containing mullite as a main component is referred to as a mullite sintered body.

  Here, in the probe card ceramic wiring substrate 1 of the present embodiment, mullite, which is the main component of the mullite-based sintered body constituting the insulating base 11, exists as particulate or columnar crystals. Since mullite has improved thermal conductivity as the crystal grain size increases and strength increases as the crystal grain size decreases, the average grain size of mullite is preferable from the viewpoint of both high thermal conductivity and high strength. The range needs to be selected, but in this case, the average particle size of mullite is 1.0 to 5.0 μm, particularly 1.7 to 2.5 μm, because it has high thermal conductivity and high strength. desirable.

  Note that the average particle size of the mullite crystal particles is determined by polishing a portion of the mullite sintered body cut out from the wiring board, and taking a photograph of the internal structure of the etched sample using a scanning electron microscope. Draw 50 circles, select the crystal particles that fall within and around the circle, then image-process the contour of each crystal particle to determine the area of each crystal particle, and replace it with a circle with the same area The diameter of the hour is calculated and obtained from the average value.

When the insulating base 11 is a mullite sintered body, the thermal expansion coefficient (room temperature to 300 ° C.) of the insulating base 11 can be in the range of 3 to 5 × 10 ⁻⁶ / ° C. As a result, the probe card ceramic wiring board 1 of the present embodiment is misaligned between the measurement terminals provided on the probe card ceramic wiring board 1 and the measurement pads formed on the surface of the Si wafer during a thermal load test. Therefore, it can be suitably used for inspection of electrical characteristics.

Further, in the probe card ceramic wiring board 1 of the present embodiment, the mullite sintered body as the insulating base 11 contains mullite as a main crystal phase and contains Mn, Ti and Mo. In the mullite sintered body, When the total amount of Al in Al ₂ O ₃ conversion and Si in SiO ₂ conversion is 100 parts by mass, the Mn is 2.0 to 4.0 parts by mass in terms of Mn ₂ O ₃ , and the Ti is It is characterized by containing 4.0 to 8.0 parts by mass in terms of TiO ₂ and 0.4 to 2.1 parts by mass in terms of MoO _{3 in} terms of Mo. Thereby, since the seepage of the glass phase in the insulating substrate 11 can be suppressed, appearance defects due to adhesion of foreign substances are hardly caused and chemical resistance can be improved.

  Usually, a sintering temperature of at least 1450 ° C. is required to sinter a molded body material containing mullite as a main component. Sometimes a glass phase mainly composed of silicon dioxide oozes out on the surface of the mullite sintered body and reacts with a setter material for firing sandwiching the formed body during firing. As a result, a part of the setter material adheres to the surface of the mullite sintered body as a foreign substance, so that the obtained insulating substrate 11 made of the mullite sintered body may have a poor appearance, and silicon dioxide is mainly used. The chemical resistance deteriorates due to the presence of the glass phase as a component.

On the other hand, in the probe card ceramic wiring board 1 of the present embodiment, as described above, the mullite sintered body as the insulating base 11 converts Al contained in the mullite sintered body into Al ₂ O _3. Mn is 2.0 to 4.0 parts by mass in terms of Mn ₂ O ₃ and Ti is 4.0 to 8.0 in terms of TiO ₂ when the total amount obtained by conversion and conversion of Si to SiO ₂ is 100 parts by mass. Because it contains 0.4 to 2.1 parts by mass of Mo and Mo in terms of MoO ₃ , it becomes possible to obtain a dense mullite sintered body at a firing temperature of 1380 ° C. to 1420 ° C., which will be described later. Moreover, exudation due to a decrease in the viscosity of the glass phase can be suppressed and chemical resistance can be improved.

  The presence of Mn, Ti and Mo contained in the insulating substrate 11 can be confirmed by atomic absorption analysis or ICP (Inductivity coupled Plasma) analysis.

Moreover, in the probe card wiring board 1 of the present embodiment, it is desirable that the molar ratio (Mo / Ti) of Mo and Ti contained in the insulating base 11 is 0.125 to 0.25. As a result, whitening in the vicinity of the wiring of the insulating base 11 can be suppressed, and the color contrast between the insulating base 11 and the wiring can be increased, so that it is possible to reduce numerical variations when the wiring is inspected.

The probe card ceramic wiring board 1 of the present embodiment has a MnTiO ₃ crystal phase at the grain boundary of mullite particles, and the amount of glass components present at the grain boundary of mullite particles is extremely small. Even when 11 is immersed in a 40% by mass potassium hydroxide aqueous solution for 5 hours, the glass component contained in the mullite sintered body is hardly eluted.

Here, the presence of the MnTiO ₃ crystal phase contained in the insulating substrate 11 is determined as follows. First, an area of 300 μm square on the surface of the sample polished for analysis is observed using a scanning electron microscope provided with an X-ray microanalyzer (EPMA) to confirm the presence of the MnTiO ₃ crystal phase.

Here, the content of Mn, Ti, and Mo with respect to 100 parts by mass of the total amount of Al and Si contained in the mullite sintered body in terms of Al ₂ O ₃ and SiO _{2 is determined by first} converting the insulating substrate 11 to acid. And the contents of aluminum (Al), silicon (Si), manganese (Mn), titanium (Ti), and molybdenum (Mo) contained in the insulating substrate 11 are obtained by ICP analysis. Are converted into Al ₂ O ₃ , SiO ₂ , Mn ₂ O ₃ , TiO ₂ , and MoO ₃ , respectively.

  In addition, in the mullite sintered body in the present embodiment, in addition to Mn, at least one selected from Ca, Sr, B, Cr, and the like as an auxiliary component that enhances sinterability is chemical resistance and foreign matter adhesion. It may be contained to the extent that it does not impair characteristics such as the appearance defect occurrence rate.

  The conductor layer (internal wiring layer 12) constituting the probe card ceramic wiring board 1 of the present embodiment is a composite conductor having a composition in which Cu is 40 to 60% by volume and W or Mo is 40 to 60% by volume. It is desirable to be configured.

  Examples of the material for forming the internal wiring layer 12 that can be fired simultaneously with the mullite sintered body include tungsten (W) or molybdenum (Mo), which is a refractory metal, but the inside made of tungsten (W) or molybdenum (Mo). The wiring layer 12 has a high electric resistance value. On the other hand, low resistance metals such as copper (Cu) have a melting point that is considerably lower than the firing temperature of ceramic sintered bodies containing mullite as a main component. It cannot be fired simultaneously with the body. Therefore, by using a composite conductor of copper and tungsten for the internal wiring layer 12, the electrical resistance value is somewhat higher than that of copper alone, but mullite is the main component at a firing temperature of 1380 ° C. to 1420 ° C. described later. Simultaneous firing with the ceramic sintered body is possible.

  However, even if simultaneous firing is possible, since firing is performed at a temperature exceeding the melting point of copper, it is necessary to suppress the melting of copper and maintain the shape of the internal wiring layer 12. Therefore, in order to achieve both low resistance and shape retention of the internal wiring layer 12, it is preferable to set the ratio of copper to 40 to 60% by volume and tungsten to 40 to 60% by volume.

  Here, the composition of the copper and tungsten of the internal wiring layer 12 was determined by cutting out a portion where the internal wiring layer 12 was formed from the probe card wiring board 1 and dissolving the solution in an acid using an ICP analysis. The content of copper and tungsten is determined by mass. Next, the volume of copper and tungsten determined as masses is divided by the respective densities to determine the respective volumes, and then the ratio of copper and tungsten when the total volume of copper and tungsten is 100% is determined.

  The surface wiring layer 13 may have the same composition as that of the internal wiring layer 13 or may be different, and may be formed only of tungsten or molybdenum which is a refractory metal.

  Further, it is desirable that the via-hole conductor 14 has the same composition as that of the surface wiring layer 13 in order to prevent the conductor component from dropping off from the via-hole conductor 14 during firing.

  The above-described ceramic wiring board for probe card 1 of the present embodiment includes a measurement terminal (probe pin) provided on the ceramic wiring board for probe card 1 and a measurement pad formed on the surface of the Si wafer during a thermal load test. Can be suitably used for inspection of electrical characteristics. Further, when the mullite sintered body has a specific composition, it becomes dense.

  Further, on the main surface of the insulating base 11 constituting the probe card ceramic wiring substrate 1 shown in FIG. 1, a land pattern (FIG. 1) originally connected to the via-hole conductor 14 instead of the surface wiring layer 13 immediately after firing. (Not shown) is formed. This land pattern is provided in order to perform a short or open inspection of the electrical connection between the internal wiring layer 12 and the via-hole conductor 14 of the probe card ceramic wiring board 1 after firing. Then, after performing a short or open inspection of the electrical connection between the internal wiring layer 12 of the probe card ceramic wiring board 1 and the via-hole conductor 14, the land pattern is removed by polishing, and the via-hole conductor 14 is exposed. The surface wiring layer 13 is formed by a thin film method such as sputtering or vapor deposition, and further, measurement terminals (probe pins) are formed on the surface of the surface wiring layer 13 to produce the probe card 2 shown in FIG. The

FIG. 2 is an explanatory diagram of a semiconductor element evaluation apparatus using one embodiment of the probe card of the present invention. The probe card ceramic wiring board 1 described above can be used as a probe card 2 as shown in FIG. 2, for example.

  In the probe card 2 shown in FIG. 2, a surface wiring layer (not shown) connected to the internal wiring layer 12 is formed on one main surface of the probe card ceramic wiring substrate 1, and a semiconductor element is formed on the surface wiring layer. A probe (measurement terminal 21) for measuring the electrical characteristics of the external circuit board 4 is connected, and the external circuit board 4 is joined to the surface opposite to the surface on which the measurement terminal 21 is formed via the connection terminal 3. It has been configured.

  Here, the external circuit board 4 is connected to the tester 5, and the measurement terminal 21 of the probe card 2 is brought into contact with the upper surface of the semiconductor wafer 7 placed on the stage 6 to measure the electrical characteristics of the semiconductor element. can do.

  Note that the probe card 2 can be driven up and down by the elevating device 8, and the measurement terminal 21 of the probe card 2 is brought into contact with or separated from the upper surface of the semiconductor wafer 7.

  When the probe card ceramic wiring board 1 of the present embodiment is applied as the wiring board of the probe card 2, first, at the time of the thermal load test, the measurement terminal 21 provided on the probe card ceramic wiring board 1 and the Si wafer 7 are used. There is no positional deviation with respect to the measurement pad formed on the surface, and it can be suitably used for inspection of electrical characteristics.

  Next, a method for manufacturing the above-described probe card ceramic wiring board 1 will be described.

First, in order to form the insulating substrate 11, a mullite (3Al ₂ O ₃ · 2SiO ₂ ) powder having a purity of 99% or more and an average particle size of 0.5 to 2.5 μm is used. By making the average particle size of mullite powder 0.5 μm or more, sheet formability is improved, and by making it 2.5 μm or less, it is possible to promote densification by firing at a temperature of 1420 ° C. or less. It becomes.

Next, with respect to 100 parts by mass of mullite powder, 2.0 to 4.0 parts by mass of Mn ₂ O ₃ powder, 4.0 to 8.0 parts by mass of TiO ₂ powder, and 0.4 to 0.4% of MoO ₃ powder. Add 2.1 parts by weight. In this case, the Mn ₂ O ₃ powder used as an additive should have an average particle diameter of 0.5 to 3 μm, a TiO ₂ powder of 0.5 to ₂ μm, and a MoO ₃ powder of 0.5 to ₂ μm. . . The purity of Mn ₂ O ₃ powder, TiO ₂ powder, and MoO ₃ powder is preferably 99% by mass or more. Thereby, sheet moldability can be improved, diffusion of Mn, Ti, and Mo can be improved, and sinterability at a temperature of 1380 ° C. to 1420 ° C. can be improved.

When the ceramic wiring board 1 for probe card of the present embodiment is manufactured, if the MoO ₃ powder is added to the mullite powder together with the Mn ₂ O ₃ powder and the TiO ₂ powder, the seepage of the glass phase can be suppressed. Appearance defects due to adhesion are less likely to occur. In particular, when the MoO ₃ powder and the TiO ₂ powder are in a predetermined ratio, whitening in the vicinity of the wiring of the obtained insulating base 11 can be suppressed, thereby increasing the color contrast between the insulating base 11 and the wiring. As a result, it is possible to reduce the numerical variation when the wiring is inspected.

  Mn, Ti, and Mo may be added as carbonates, nitrates, acetates, and the like that can form oxides by firing in addition to the above oxide powders.

Furthermore, for the reason that the densification of the mullite sintered body and the simultaneous sinterability of the composite metal forming the internal wiring layer 12 are enhanced, the group of Ca, Sr, B and Cr with respect to 100 parts by mass of mullite powder One or more oxide powders selected from (CaO powder, SrO powder, B ₂ O ₃ powder, Cr ₂ O ₃ powder) or a powder composed of carbonate, nitrate, acetate capable of forming an oxide by firing, You may add in the ratio which does not change the thermal expansion coefficient of the ceramic wiring board 1 for probe cards of this embodiment, and does not deteriorate chemical resistance.

  Next, an organic binder and a solvent are added to the mixed powder to prepare a slurry, and then a green sheet is produced by a molding method such as a press method, a doctor blade method, a rolling method, and an injection method. Alternatively, an organic binder is added to the mixed powder, and a green sheet having a predetermined thickness is produced by a method such as press molding or rolling. In addition, although the thickness of a green sheet can be 50-300 micrometers, for example, it is not specifically limited.

  Then, a through hole having a diameter of 50 to 250 μm is appropriately formed on the green sheet by a micro drill, a laser, or the like.

  Thus, with respect to the produced green sheet, copper (Cu) powder and tungsten (W) powder are set to the above-described ratios (Cu is 40 to 60% by volume, W is 40 to 60% by volume). A conductor paste is prepared by mixing, the conductor paste is filled in the through holes of each green sheet, and printed and applied by a method such as screen printing or gravure printing to form a wiring pattern.

  In this conductive paste, alumina powder or a mixed powder of the same composition as that of the insulating base 11 may be added in addition to the above metal powder in order to improve adhesion to the insulating base 11, and further Ni Active metals such as those or oxides thereof may be added at a ratio of 0.05 to 2% by volume with respect to the entire conductor paste.

  Thereafter, the green sheet on which the conductor paste is printed is aligned and laminated and pressure-bonded, and then the laminate is fired in a non-oxidizing atmosphere (nitrogen atmosphere or a mixed atmosphere of nitrogen and hydrogen).

  Here, the maximum temperature during firing is preferably set to 1380 ° C. to 1420 ° C. When the maximum temperature during firing is 1380 ° C. to 1420 ° C., the mullite sintered body can be densified by adjusting the holding time at a temperature in this range.

  Further, in the mullite sintered body that is the insulating base 11 constituting the probe card ceramic wiring substrate 1 of the present embodiment, when a predetermined amount of at least Mn, Ti, and Mo is contained and fired, neck growth of mullite particles is suppressed. Therefore, abnormal grain growth of mullite can be suppressed, and a mullite sintered body having a high Young's modulus can be obtained.

Further, when producing the probe card ceramic wiring board 1 of the present embodiment, the rate of temperature increase from 1000 ° C. to the highest firing temperature for densifying the mullite sintered body is 50 ° C./hr.
To 150 ° C./hr, particularly 75 ° C./hr to 100 ° C./hr, and the rate of temperature decrease from the highest firing temperature to 1000 ° C. is 50 ° C./hr to 300 ° C./hr, in particular 50 ° C./hr. h
It is desirable to set it to r-100 degreeC / hr.

Furthermore, the firing atmosphere is a non-oxidizing atmosphere containing hydrogen and nitrogen and having a dew point of not higher than + 30 ° C., particularly not higher than + 25 ° C., for the purpose of suppressing diffusion of Cu in the internal wiring layer 12. Is desirable. If the dew point during firing is higher than + 30 ° C., oxide ceramics react with moisture in the atmosphere during firing to form an oxide film, and this oxide film and copper react to reduce the resistance of the conductor. This is not only a hindrance, but also promotes the diffusion of Cu. Note that an inert gas such as argon gas may be mixed in this atmosphere as desired.

  The probe card ceramic wiring board 1 manufactured by the method described above includes Cu and W as main components, has an internal wiring layer 12 with low wiring resistance, and has a thermal expansion coefficient of the heat of the Si wafer to be inspected. It is close to the expansion coefficient.

Mn ₂ O ₃ powder with a purity of 99% and an average particle size of 1.5 μm, with a purity of 99% and an average particle size of 2.1 μm. After mixing 1.0 μm TiO ₂ powder and MoO ₃ powder having a purity of 99% and an average particle size of 1.0 μm in a proportion as shown in Table 1, an acrylic binder as a molding organic resin (organic binder) Then, a ceramic slurry was prepared by mixing toluene as an organic solvent, and then formed into a 200 μm thick sheet by a doctor blade method to produce a ceramic green sheet.

  15 layers of the obtained green sheets were laminated, degreased in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C. at a temperature from room temperature to 600 ° C., and then fired. Firing was performed in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C. at 1380 ° C. for 1 hour and then cooled to obtain a mullite sintered body.

  Here, the appearance defect occurrence rate of the insulating base shown in Table 1 is obtained by calculating the probability of occurrence of seepage and foreign matter after 39 samples were inspected.

  Further, as an indicator of chemical resistance, the initial mass of the mullite sintered body and the mass of the mullite sintered body after being immersed in a 40% by weight aqueous solution of potassium hydroxide at 100 ° C. for 5 hours were measured, and the weight decreased. Ratio (“initial mass of mullite sintered body” − “mass of mullite sintered body after being immersed in 40% by weight aqueous solution of potassium hydroxide at 100 ° C. for 5 hours”) / “initial stage of mullite sintered body” The “mass” × 100 [%] was calculated. Here, the chemical resistance was determined to be acceptable when the weight change rate was 0.12% by mass or less. The number of samples was 3, and the average value was obtained.

  In addition, a conductor paste prepared by making Cu powder and W powder 45% by volume of Cu and W by 55% by volume is printed on the surface of each green sheet, and the internal wiring pattern is formed on the produced green sheet. A green sheet in which via conductors were formed by filling Mo through paste in the through holes was prepared.

  At this time, an evaluation pattern having a line width of 100 μm and a length of 20 mm is formed on a part of the internal wiring pattern for measuring the wiring width, and this internal wiring pattern is connected to the via conductor. A land pattern was formed at the end of the pattern for connection to the via conductor.

  The ceramic green sheets thus produced were aligned and laminated and pressed to produce a laminate. In the laminate produced here, a ceramic green sheet provided with pads for contacting measurement terminals for resistance measurement is arranged on the uppermost layer, and an internal wiring pattern and land for resistance measurement are arranged on the second layer. A ceramic green sheet with a pattern printed on it is placed, and the through hole (filled with Mo conductor paste) provided in the uppermost layer is electrically connected to the land printed with the second layer. In addition, the ceramic green sheets of all 30 layers are laminated.

Next, this laminate was fired under the same degreasing and firing conditions as described above to produce a probe card ceramic wiring board. The substrate size was 340 mm × 340 mm and the thickness was 5 mm.

  Next, after polishing the surface of the produced probe card ceramic wiring board and removing the land pattern, the surface of the probe card ceramic wiring board is made of titanium and copper having a thickness of about 2 μm by sputtering. Conductive thin films were formed in order.

  Next, a conductive thin film of titanium and copper is patterned by photolithography, and nickel and gold electrolytic plating films are formed in this order on the copper surface, and on the via-hole conductor on the surface of the probe card ceramic wiring board. A surface wiring layer was formed.

  Next, a Si measurement terminal (probe pin) was joined to the surface of the surface wiring layer formed on the surface of the probe card ceramic wiring substrate to produce a probe card.

  Next, the probe pin that is the measurement terminal of the probe card is brought into contact with the upper surface of the Si wafer placed on the stage and held at a temperature of 90 ° C., using a stereomicroscope from the side of the probe card, The positional deviation between the probe pin and the measurement pad formed on the surface of the Si wafer was observed. In this case, when the measurement terminal (probe pin) and the measurement pad formed on the outermost periphery of the probe card and the Si wafer are observed, the tip of the measurement terminal (probe pin) is displaced laterally from the measurement pad. Was assumed to be misaligned. None of the fabricated samples showed any misalignment.

  Further, nine measurement patterns of the wiring width were cut out from the produced probe card ceramic wiring board, the wiring width of the internal wiring was measured, and the variation in the wiring width was obtained.

In addition, the contents of Al, Si, Mn, Ti, and Mo contained in the insulating substrate 11 are obtained by dissolving the insulating substrate cut out from the probe card wiring board once in an acid, and then first performing dielectric absorption by atomic absorption analysis. A qualitative analysis of the elements contained in the porcelain was performed, and then the standard solution was diluted with the standard solution for each of the specified elements, and quantified by ICP emission spectroscopic analysis. In this case, the content of aluminum (Al), silicon (Si), manganese (Mn), titanium (Ti), and molybdenum (Mo) contained in the insulating substrate is determined by ICP analysis, and aluminum ( seeking mullite _{(3Al 2 O 3 · 2SiO 2} ) the amount of al) and silicon (Si), each further match Mn, Ti, in the amounts shown in Table 1 was determined in terms of oxide amount of Mo relative to the amount of mullite It was.

  In addition, the composition of copper and tungsten in the internal wiring layer is a conductor material obtained by first cutting out a portion where the internal wiring layer is formed from the probe card wiring board and dissolving the solution in an acid using ICP analysis. The contents of copper and tungsten were determined by mass. Next, the volume of copper and tungsten determined as masses was divided by the respective densities to determine the respective volumes, and then the ratio of copper and tungsten when the total volume of copper and tungsten was 100% was determined. . In addition, it was confirmed that the internal wiring layer formed on the produced probe card wiring board was 45% by volume of copper and 55% by volume of tungsten. These results are shown in Table 1.

  As is clear from the results in Table 1, in the samples of the present invention (sample Nos. 3 to 6, 9 to 11 and 15), the weight change rate in the chemical resistance test is 0.09% by mass or less. The appearance defect rate was zero% with no foreign matter adhering to the surface of the insulating substrate.

In particular, samples with a Mo / Ti ratio of 0.125 to 0.25 (sample Nos. 4, 6, 9, 10).
And 15), the variation in the wiring width when the wiring was inspected was 3.7 μm, the color contrast between the insulating substrate and the wiring was high, and the numerical variation when the wiring was inspected could be reduced.

  On the other hand, in samples (sample Nos. 1, 2, 7, 8, 12-14 and 16) outside the scope of the present invention, the insulating base is not densified or the weight change rate in the chemical resistance test is high. It was large or the appearance defect rate was large.

1: Ceramic wiring board for probe card 11: Insulating substrate 12: Internal wiring layer 13: Surface wiring layer 14: Via hole conductor 2: Probe card 21: Measurement terminal

Claims (3)

A ceramic wiring board for a probe card comprising a mullite as a main crystal phase, an insulating substrate made of a ceramic sintered body containing Mn, Ti and Mo, and a conductor layer provided in the insulating substrate, When the ceramic sintered body has a total amount of Al and Si contained in the ceramic sintered body converted to Al ₂ O ₃ and SiO ₂ as 100 parts by mass, the Mn is converted to Mn ₂ O ₃ . It contains 2.0 to 4.0 parts by mass, Ti is 4.0 to 8.0 parts by mass in terms of TiO ₂ , and Mo is 0.4 to 2.1 parts by mass in terms of MoO _3. Ceramic wiring board for probe cards. 2. The probe card ceramic wiring board according to claim 1, wherein a molar ratio of Mo to Ti (Mo / Ti) is 0.125 to 0.25.   A surface wiring layer is provided on the surface of the probe card ceramic wiring board according to claim 1, and a measurement terminal for measuring electrical characteristics of the semiconductor element is connected to the surface wiring layer. Featured probe card.

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