JP5495774B2 - Ceramic circuit board for probe card and probe card using the same - Google Patents

Description

  The present invention relates to a ceramic wiring board for a probe card provided with fine wiring for measuring electrical characteristics of a semiconductor wafer, and a probe card using the same.

  For semiconductor elements with large-scale integrated circuits that are simultaneously formed on a semiconductor wafer such as a Si wafer, a product with poor electrical connection and electrical characteristics at a substantially constant rate due to electrical failure due to adhesion of foreign matter, etc. It is included.

  As a device for detecting defective semiconductor elements, a probe card is known that can simultaneously inspect the electrical characteristics of a large number of semiconductor elements in the same state as a semiconductor wafer (see, for example, Patent Document 1). ).

  This probe card has a wiring board in which fine wiring is formed on the main surface and inside of an insulating base made of an alumina sintered body, and a plurality of measuring terminals called probe pins arranged with high precision on the surface of the wiring board. By applying this probe pin to the terminals of many semiconductor elements, measuring the output when voltage is applied and comparing it with the expected value, it is possible to judge the quality of many semiconductor elements at once. To do.

  In recent years, with the miniaturization of the wiring of integrated circuits formed in semiconductor elements, it has been required to increase the number of probe pins per unit area of the probe card, and the wiring formed on the probe card ceramic wiring board is also more There is a demand for miniaturization.

  However, miniaturization of the wiring, that is, narrowing of the line width causes an increase in wiring resistance and delay of the electric signal, which makes it impossible to correctly determine the operation state of the integrated circuit, leading to a test error.

  Therefore, it is conceivable to use a low-resistance metal such as Cu, Ag, or Au as the wiring. However, since these low-resistance metals have a low melting point, simultaneous firing with the alumina sintered body cannot be performed with only the low-resistance metal.

  In contrast, the applicant of the present invention has a wiring mainly composed of a composite metal of a low-resistance metal such as Cu, Ag, Au and a refractory metal such as Mo, W inside an insulating base made of an alumina sintered body. A ceramic wiring board for a probe card in which is formed is proposed (see, for example, Patent Document 2).

  More specifically, this probe card ceramic wiring board includes 1500 Mn and Si as sintering aids, and is 1500 ° C. lower than a wiring board having a conventional insulating substrate made of an alumina sintered body by 200 ° C. or more. Since it can be fired at a temperature of less than or equal to ° C., it is possible to form a wiring containing the composite metal of the low resistance metal and the refractory metal as a main component by simultaneous firing.

JP-A-11-160356 JP 2009-180518 A

However, the probe card ceramic wiring board in which the insulating base is formed of the alumina sintered body described in Patent Document 2 has a thermal expansion coefficient of 6 to 7 × that of the alumina sintered body. from close to 10 ^-6 / ° C.), the difference between the thermal expansion coefficient of the Si wafer to be inspected (3~4 × ^{10 -6} / ℃) is large, therefore, carried out before the measurement of the electrical characteristics of a semiconductor element In the thermal load test (burn-in test), the measurement terminals (probe pins) provided on the probe card ceramic wiring board are displaced from the position of the measurement pad formed on the surface of the Si wafer, and the electrical characteristics cannot be inspected. There was a problem.

  Accordingly, the present invention has been made in view of such circumstances, and has a low wiring resistance, and is formed on the surface of the Si wafer and the measurement terminals provided on the probe card ceramic wiring board during the thermal load test. It is an object of the present invention to provide a probe card ceramic wiring board that can be suitably used at the time of inspection of electrical characteristics and a probe card using the same.

The ceramic wiring board for a probe card of the present invention has mullite as a main crystal phase , contains Mn and Ti, and sets the X-ray diffraction intensity of the (210) plane of the mullite to 100%.
The X-ray diffraction intensity of the (104) plane of Al ₂ O ₃ is 78 to 120%, and the X-ray diffraction intensity of the (420) plane of Mn ₃ Al ₂ (SiO ₄ ) ₃ is 0.13 to 0. 70%, an insulating base made of a ceramic sintered body not containing MnAl ₂ O ₄ and MnTiO ₃ , copper provided in the insulating base is 40 to 60% by volume, and tungsten is 40 to 60% by volume And a composite conductor of copper and tungsten having the composition as described above.

In the probe card ceramic wiring board, the ceramic sintered body preferably contains 1 to 5% by mass of Ti in terms of TiO ₂ with respect to 100% by mass of the mullite.

  In the probe card of the present invention, a surface wiring layer is provided on the surface of the above-described probe card ceramic wiring board, and a measurement terminal for measuring electrical characteristics of a semiconductor element is connected to the surface wiring layer. It is characterized by.

  According to the present invention, the wiring resistance is low, and in the thermal load test, the positional deviation between the measurement terminal provided on the probe card ceramic wiring board and the measurement pad formed on the surface of the Si wafer is small, and the electrical characteristics are A ceramic wiring board for a probe card that can be suitably used for inspection and a probe card using the same can be obtained.

It is a schematic sectional drawing of one Embodiment of the ceramic wiring board for probe cards of this invention. It is explanatory drawing of the evaluation apparatus of the semiconductor element using one Embodiment of the probe card of this invention.

  An embodiment of the present invention will be described with reference to the drawings.

  FIG. 1 is a schematic cross-sectional view of one embodiment of a ceramic wiring board for a probe card of the present invention. A probe card ceramic wiring board 1 shown in FIG. 1 includes an insulating base 11 made of a ceramic sintered body, and an inner part made of a composite conductor mainly containing a low-resistance metal and a refractory metal formed inside the insulating base 11. A wiring layer 12 and a surface wiring layer 13 formed on the surface of the insulating base 11 are provided, and the internal wiring layers 12 or the internal wiring layer 12 and the surface wiring layer 13 in the insulating base 11 are electrically connected. And via-hole conductors 14 connected to.

  The insulating substrate 11 is composed of a plurality of ceramic insulating layers 11a, 11b, 11c, and 11d, and each ceramic insulating layer 11a, 11b, 11c, and 11d is formed of a ceramic sintered body containing mullite as a main component. Hereinafter, a ceramic sintered body containing mullite as a main component is referred to as a mullite sintered body.

When the ceramic sintered body that is the ceramic insulating layers 11a, 11b, 11c, and 11d is a mullite sintered body, the thermal expansion coefficient (room temperature to 300 ° C.) of the ceramic insulating layers 11a, 11b, 11c, and 11d is 3.5. It can be in the range of ˜4.5 × 10 ⁻⁶ / ° C. As a result, the probe card ceramic wiring board 1 of the present embodiment is misaligned between the measurement terminals provided on the probe card ceramic wiring board 1 and the measurement pads formed on the surface of the Si wafer during a thermal load test. Therefore, it can be suitably used for inspection of electrical characteristics.

  Mullite, which is the main component of the ceramic sintered body constituting the ceramic insulating layers 11a, 11b, 11c, and 11d, is present as a particulate or columnar crystal. In the present invention, the average particle size of mullite is not particularly limited, but the thermal conductivity improves as the crystal grain size increases, and the strength improves as the crystal grain size decreases. A suitable range of the average particle size of mullite is selected from the viewpoint of achieving both high strength. In this case, the average particle size of mullite is preferably 1.0 to 5.0 μm, particularly 1.7 to 2.5 μm.

  The average grain size of mullite is obtained by polishing a portion of the ceramic sintered body cut out from the wiring board, taking a photograph of the internal structure of the polished sample using a scanning electron microscope, and about 50 circles on the photograph. , Select the crystal particles that fall within and around the circle, then image-process the outline of each crystal particle to determine the area of each crystal particle, and calculate the diameter when replaced with a circle with the same area Calculate and calculate from the average value.

In the probe card ceramic wiring substrate 1 of the present embodiment, the ceramic sintered body as the ceramic insulating layers 11a, 11b, 11c, and 11d contains mullite as a main crystal phase, contains Mn and Ti, When the X-ray diffraction intensity of the 210) plane is 100%, the X-ray diffraction intensity of the (104) plane of Al ₂ O ₃ is 78 to 120%, and (420) of Mn ₃ Al ₂ (SiO ₄ ) ₃ with X-ray diffraction intensity is from 0.13 to 0.70 percent of the) plane, and even have good those having no MnAl ₂ O ₄ and MnTiO _3. As a result, the weight change rate in the chemical resistance test can be reduced, and a ceramic sintered body having a small weight loss change rate can be obtained in the repeated test of the chemical resistance test. Here, because the ceramic sintered body does not contain MnAl ₂ O4 and MnTiO _3, when subjected to X-ray diffraction, in diagram X-ray diffraction, each main MnAl ₂ O ₄ and MnTiO ₃ A peak whose diffraction intensity is below the noise level of the X-ray diffraction pattern.

  On the other hand, a mullite sintered body is formed using glass containing Si as a main component as a sintering aid, and there are many glasses (amorphous parts) containing Si as a main component at the grain boundaries of the ceramic sintered body. If present, the chemical resistance is greatly reduced. For this reason, in this invention, in order to improve the chemical resistance of a mullite sintered body, many crystal phases excellent in chemical resistance are precipitated in the grain boundary.

For example, when a mullite sintered body in which glass containing Si as a main component exists at the grain boundary is immersed in a 40 mass% potassium hydroxide aqueous solution for 5 hours, elution of the glass component occurs. In the mullite sintered body in which Mn ₃ Al ₂ (SiO ₄ ) ₃ is precipitated, it is not eluted at all with respect to the aqueous potassium hydroxide solution.

Therefore, it is important for improving chemical resistance to have Mn ₃ Al ₂ (SiO ₄ ) ₃ at the grain boundary between mullite grains, and the diffraction intensity of the (210) plane of mullite by X-ray diffraction is 100%. When the diffraction intensity of the (420) plane of Mn ₃ Al ₂ (SiO ₄ ) ₃ is 0.13 to 0.70%, sufficient chemical resistance as the probe card wiring board 1 is obtained. Can do it.

Here, when the diffraction intensity of the (210) plane of mullite by X-ray diffraction is 100%, the diffraction intensity of the (420) plane of Mn ₃ Al ₂ (SiO ₄ ) ₃ is 0.13% or more. Adjusts the ratio of mullite and sintering aid components (Mn, Ti), and Mn and Ti are added to the remainder of 5 to 10% by mass excluding mullite in terms of Mn ₂ O ₃ and TiO ₂ , respectively. : It is necessary to include it in a mass ratio of 20 to 40:60 and to fire under predetermined firing conditions described later.

Further, in the probe card ceramic wiring board 1 of the present embodiment, the ceramic sintered body, which is a mullite sintered body constituting the insulating base 11, is Ti in terms of TiO ₂ with respect to 100% by mass of mullite. It is desirable to contain 1-5 mass%. In a mullite sintered body, if Ti is contained in an amount of 1 to 5% by mass in terms of TiO ₂ with respect to 100% by mass of mullite, the rate of change in weight decrease due to repeated chemical resistance tests should be 12% or less. Can do. This is because the Ti component can strengthen the crystal phase in the mullite sintered body. Further, when the Ti component is contained in the mullite sintered body, the color of the mullite sintered body can be made green. When the color of the mullite sintered body is green, the contrast with the color of the surface wiring layer formed on the surface of the insulating base 11 is increased by a thin film method described later. Positioning at the time of formation becomes easy, and there is an advantage that the efficiency of the manufacturing process of the probe card can be increased. Here, the content of Ti with respect to 100% by mass of mullite is obtained as follows. The insulating substrate 11 is dissolved, and the contents of aluminum (Al), silicon (Si) and titanium (Ti) contained in the insulating substrate are obtained by ICP (Inductively Coupled Plasma) analysis, and aluminum (Al) and silicon (Si) are obtained. ) To mullite (3Al ₂ O ₃ .2SiO ₂ ) and TiO ₂ .

Further, as described above, when the insulating substrate 11 in the present embodiment has mullite as the main crystal phase, contains Mn and Ti, and the X-ray diffraction intensity of the (210) plane of mullite is 100%, Al The X-ray diffraction intensity of the (104) plane of ₂ O ₃ is 78 to 120%, and the X-ray diffraction intensity of the (420) plane of Mn ₃ Al ₂ (SiO ₄ ) ₃ is 0.13 to 0.70%. In addition, when formed from a mullite sintered body having a specific crystal phase such as not containing MnAl ₂ O ₄ and MnTiO ₃ , the Young's modulus of the mullite sintered body can be 178 to 223 GPa, A substrate with a small deformation amount can be obtained as the probe card ceramic wiring substrate 1.

In addition, in the mullite sintered body in the present embodiment, MgO, CaO, SrO, B ₂ O _3, Cr ₂ O _{3, and the} like as auxiliary components for improving sinterability in addition to Mn ₂ O ₃ and TiO _2. At least one selected from the above may be contained to such an extent that properties such as chemical resistance, Young's modulus, density, and color are not impaired.

  The internal wiring layer 12 constituting the probe card ceramic wiring substrate 1 of the present embodiment is composed of a composite conductor of Cu and W having a composition in which Cu is 40 to 60% by volume and W is 40 to 60% by volume. This is very important.

  Tungsten (W), which is a refractory metal, can be used as a material for forming the internal wiring layer 12 that can be fired simultaneously with the mullite sintered body. The internal wiring layer 12 made of tungsten (W) has a high electric resistance value. On the other hand, low resistance metals such as copper (Cu) have a melting point that is considerably lower than the firing temperature of ceramic sintered bodies containing mullite as a main component. It cannot be fired simultaneously with the body. Therefore, by using a composite conductor of copper and tungsten for the internal wiring layer 12, the electrical resistance value is somewhat higher than that of copper alone, but mullite is the main component at a firing temperature of 1380 ° C. to 1420 ° C. described later. Simultaneous firing with the ceramic sintered body is possible.

  However, even if simultaneous firing is possible, since firing is performed at a temperature exceeding the melting point of copper, it is necessary to suppress the melting of copper and maintain the shape of the internal wiring layer 12. Therefore, in order to achieve both low resistance and shape retention of the internal wiring layer 12, the ratio of copper is 40-60% by volume and tungsten is 40-60% by volume.

  Here, the composition of the copper and tungsten of the internal wiring layer 12 is determined by ICP (Inductively Coupled Plasma) analysis of a solution in which the internal wiring layer 12 is formed from the probe card wiring board 1 and dissolved in acid. Is used to determine the content of copper and tungsten, which are conductor materials, by mass. Next, the volume of copper and tungsten determined as masses is divided by the respective densities to determine the respective volumes, and then the ratio of copper and tungsten when the total volume of copper and tungsten is 100% is determined.

  The surface wiring layer 13 may have the same composition as that of the internal wiring layer 13 or may be different from each other, and may be formed only of tungsten which is a refractory metal.

  Further, it is desirable that the via-hole conductor 14 has the same composition as that of the surface wiring layer 13 in order to prevent the conductor component from dropping off from the via-hole conductor 14 during firing.

  The above-described ceramic wiring board for probe card 1 of the present embodiment includes a measurement terminal (probe pin) provided on the ceramic wiring board for probe card 1 and a measurement pad formed on the surface of the Si wafer during a thermal load test. Can be suitably used for inspection of electrical characteristics. Further, when the mullite sintered body has a specific composition, it has excellent chemical resistance.

  Further, on the main surface of the insulating base 11 shown in FIG. 1, a land pattern (not shown) connected to the via-hole conductor 14 is originally formed instead of the surface wiring layer 13 immediately after firing. This land pattern is provided in order to perform a short or open inspection of the electrical connection between the internal wiring layer 12 and the via-hole conductor 14 of the probe card ceramic wiring board 1 after firing. Then, after performing a short or open inspection of the electrical connection between the internal wiring layer 12 of the probe card ceramic wiring board 1 and the via-hole conductor 14, the land pattern is removed by polishing, and the via-hole conductor 14 is exposed. The surface wiring layer 13 is formed by a thin film method such as sputtering or vapor deposition, and further, measurement terminals (probe pins) are formed on the surface of the surface wiring layer 13 to produce the probe card 2 shown in FIG. The

  FIG. 2 is an explanatory diagram of a semiconductor element evaluation apparatus using one embodiment of the probe card of the present invention. The probe card ceramic wiring board 1 described above can be used as a probe card 2 as shown in FIG. 2, for example.

  In the probe card 2 shown in FIG. 2, a surface wiring layer (not shown) connected to the internal wiring layer 12 is formed on one main surface of the probe card ceramic wiring substrate 1, and a semiconductor element is formed on the surface wiring layer. To which a probe (measuring terminal 21) for measuring the electrical characteristics is connected.

  Further, a connection terminal (not shown) is formed on the other main surface of the probe card ceramic wiring board 1, and this connection terminal is joined to the external circuit board 4 via the solder 3. , Connected to the tester 5. Then, the electrical characteristics of the semiconductor element can be measured by bringing the measurement terminal 21 of the probe card 2 into contact with the upper surface of the semiconductor wafer 7 placed on the stage 6.

  The probe card 2 and the external circuit board 4 can be driven up and down by the lifting device 8 so that the measurement terminal 21 of the probe card 2 is brought into contact with or separated from the upper surface of the semiconductor wafer 7.

  When the probe card ceramic wiring board 1 of the present embodiment is applied as the wiring board of the probe card 2, first, at the time of a thermal load test, the measurement terminal 21 provided on the probe card ceramic wiring board 1 and the Si wafer 7 are used. There is no positional deviation with respect to the measurement pad formed on the surface, and it can be suitably used for inspection of electrical characteristics.

Further, when the insulating substrate 11 constituting the probe card ceramic wiring substrate 1 has mullite as the main crystal phase, contains Mn and Ti, and the X-ray diffraction intensity of the (210) plane of mullite is 100%, The X-ray diffraction intensity of the (104) plane of Al ₂ O ₃ is 78 to 120%, and the X-ray diffraction intensity of the (420) plane of Mn ₃ Al ₂ (SiO ₄ ) ₃ is 0.13 to 0.70%. In addition, when formed from a mullite sintered body having a specific crystal phase such as not containing MnAl ₂ O ₄ and MnTiO ₃ , a probe card 2 having excellent chemical resistance can be obtained. .

  Next, a method for manufacturing the above-described probe card ceramic wiring board 1 will be described.

First, in order to form the insulating substrate 11, a mullite (3Al ₂ O ₃ · 2SiO ₂ ) powder having a purity of 99% or more and an average particle size of 0.5 to 2.5 μm is used. By making the average particle size of mullite powder 0.5 μm or more, sheet formability is improved, and by making it 2.5 μm or less, it is possible to promote densification by firing at a temperature of 1420 ° C. or less. It becomes.

Next, with respect to 100 wt% of mullite powder, _Al 2 _{O 3} powder 0-50 mass%, _Mn 2 _{O 3} powder from 1 to 10 wt%, mixed with TiO ₂ powder was added to 10 wt% powder To prepare. In this case, the Al ₂ O ₃ powder used as an additive has an average particle size of 0.5 to 1.5 μm, the Mn ₂ O ₃ powder has an average particle size of 0.7 to 1.7 μm, and the TiO ₂ powder has an average particle size of Is preferably 1 to 3 μm. The purity of the Al ₂ O ₃ powder, Mn ₂ O ₃ powder, and TiO ₂ powder is preferably 99% by mass or more. Thereby, the sheet formability is improved, the diffusion of Mn and Ti can be improved, the sinterability at a temperature of 1380 ° C. to 1420 ° C. can be enhanced, and Al ₂ O ₃ released from mullite. And crystallization of Mn ₃ Al ₂ (SiO ₄ ) ₃ formed from SiO ₂ and additive Mn ₂ O ₃ can be enhanced. Here, the reason why 1 to 10% by mass of TiO ₂ is added to 100% by mass of the mullite powder is to make the mullite sintered body green. Mn and Ti may be added as carbonates, nitrates, acetates or the like that can form oxides by firing in addition to the above oxide powders. Even in this case, it is preferable to mix such that Mn is 1 to 10% by mass in terms of Mn ₂ O ₃ and Ti is 1 to 10% by mass in terms of TiO _{2 with} respect to 100% by mass of mullite powder.

Furthermore, Mg, Ca, Sr, B, and Cr are used with respect to 100% by mass of mullite powder because the sinter of the mullite sintered body and the simultaneous sinterability with the composite metal forming the internal wiring layer 12 are enhanced. One or more oxide powders selected from the group of (MgO powder, CaO powder, SrO powder, B ₂ O ₃ powder, Cr ₂ O ₃ powder) or carbonates, nitrates, acetates that can form oxides by firing You may add the powder which consists of these in the ratio of the grade which does not change the thermal expansion coefficient of the ceramic wiring board 1 for probe cards of this embodiment, and does not deteriorate chemical resistance.

  Next, an organic binder and a solvent are added to the mixed powder to prepare a slurry, and then a green sheet is produced by a molding method such as a press method, a doctor blade method, a rolling method, and an injection method. Alternatively, an organic binder is added to the mixed powder, and a green sheet having a predetermined thickness is produced by a method such as press molding or rolling. In addition, although the thickness of a green sheet can be 50-300 micrometers, for example, it is not specifically limited.

  Then, a through hole having a diameter of 50 to 250 μm is appropriately formed on the green sheet by a micro drill, a laser, or the like.

  Thus, with respect to the produced green sheet, copper (Cu) powder and tungsten (W) powder are set to the above-described ratios (Cu is 40 to 60% by volume, W is 40 to 60% by volume). A conductor paste is prepared by mixing, the conductor paste is filled in the through holes of each green sheet, and printed and applied by a method such as screen printing or gravure printing to form a wiring pattern.

  In this conductive paste, alumina powder or a mixed powder of the same composition as that of the insulating base 11 may be added in addition to the above metal powder in order to improve adhesion to the insulating base 11, and further Ni Active metals such as those or oxides thereof may be added at a ratio of 0.05 to 2% by volume with respect to the entire conductor paste.

  Thereafter, the green sheet on which the conductor paste is printed is aligned and laminated and pressure-bonded, and then the laminate is fired in a non-oxidizing atmosphere (nitrogen atmosphere or a mixed atmosphere of nitrogen and hydrogen).

Here, it is important that the maximum temperature during firing is 1380 ° C. to 1420 ° C. When the maximum temperature is lower than 1380 ° C., even if the amount of heat applied by increasing the holding time at the maximum temperature or slowing the heating rate as described later is increased, Mn ₃ Al _The densification tends to end without progressing the nucleation of ₂ (SiO ₄ ) ₃ crystal, and when the maximum temperature exceeds 1420 ° C., the internal wiring layer 12 tends to be deformed or thinned. There is.

And in order to precipitate a lot of Mn ₃ Al ₂ (SiO ₄ ) ₃ crystals in the grain boundary part, it is important to hold at the highest temperature during firing (1380 ° C. to 1420 ° C.) for 1 hour or more. Thus, by increasing the holding time at the maximum temperature, nucleation of Mn ₃ Al ₂ (SiO ₄ ) ₃ crystals can be promoted, and the amount of precipitated crystals can be increased.

  Further, in the mullite sintered body which is the insulating base 11 constituting the probe card ceramic wiring substrate 1 of the present embodiment, the grain boundary phase is crystallized, so that the neck growth of mullite crystal grains can be suppressed, so Abnormal grain growth can be suppressed, and a mullite sintered body having a high Young's modulus can be obtained.

  Moreover, when producing the probe card ceramic wiring substrate 1 of the present embodiment, the rate of temperature increase from 1000 ° C. to the highest firing temperature is 50 ° C./hr to 150 ° C./hr, in particular, 75 ° C./hr to 100 ° C. / It is desirable to set to hr. When the rate of temperature rise is slower than 50 ° C./hr, the firing time is long, leading to a decrease in productivity. When the rate of temperature rise is faster than 150 ° C./hr, the stress generated by thermal expansion during firing This is likely to cause cracks in the substrate.

Furthermore, it is desirable that the rate of temperature decrease from the highest firing temperature to 1000 ° C. is 50 ° C./hr to 300 ° C./hr, particularly 50 ° C./hr to 100 ° C./hr. When the temperature decrease rate is faster than 300 ° C./hr, a sufficient amount of Mn ₃ Al ₂ (SiO ₄ ) ₃ crystals cannot be precipitated, and MnAl ₂ O ₄ and MnTiO ₃ crystals are likely to be precipitated. Further, when the temperature lowering rate is slower than 50 ° C./hr, the firing time is long and the productivity is lowered.

  Furthermore, the firing atmosphere is a non-oxidizing atmosphere containing hydrogen and nitrogen and having a dew point of not higher than + 30 ° C., particularly not higher than + 25 ° C., for the purpose of suppressing diffusion of Cu in the internal wiring layer 12. Is desirable. If the dew point during firing is higher than + 30 ° C., oxide ceramics react with moisture in the atmosphere during firing to form an oxide film, and this oxide film and copper react to reduce the resistance of the conductor. This is not only a hindrance, but also promotes the diffusion of Cu. Note that an inert gas such as argon gas may be mixed in this atmosphere as desired.

  The probe card ceramic wiring board 1 manufactured by the method described above has an internal wiring layer 12 containing Cu and W as main components, and the thermal expansion coefficient is close to the thermal expansion coefficient of the Si wafer to be inspected. In addition, it has excellent chemical resistance.

An Al ₂ O ₃ powder with a purity of 99% and an average particle size of 1 μm, and an average particle size of 99% with an average particle size of 100% by mass of mullite powder with a purity of 99% by mass and an average particle size of 1.8 μm A 1.5 μm Mn ₂ O ₃ powder and a TiO ₂ powder having a purity of 99% and an average particle diameter of 1.0 μm are mixed in a proportion as shown in Table 1, and this is used as an organic resin (organic binder) for molding. A slurry was prepared by mixing an acrylic binder and toluene as an organic solvent, and then a green sheet having a thickness of 200 μm was prepared using a doctor blade method.

  Next, 15 layers of the obtained green sheets were laminated, degreased in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C. at a temperature from room temperature to 600 ° C., and then fired. Firing is performed at a rate of temperature rise shown in Table 1 from 1000 ° C. to the maximum temperature, held in a nitrogen-hydrogen mixed atmosphere with a dew point of + 25 ° C. at the maximum temperature for 1 hour, and then from the maximum temperature to 1000 ° C. Was cooled at a temperature drop rate shown in Table 1 to obtain a mullite sintered body.

Moreover, the crystal | crystallization which exists in a mullite sintered compact grind | pulverized the mullite sintered compact, and identified the main peak position obtained by X-ray diffraction in light of JCPDS. For the identified crystal phases Al ₂ O ₃ , MnAl ₂ O ₄ , MnTiO _3, and Mn ₃ Al ₂ (SiO ₄ ) ₃ , the diffraction intensity of each main peak is expressed as a ratio to the diffraction intensity of the mullite main peak. Asked. The results are shown in Table 2. In Table 2, values obtained by multiplying the obtained ratio by 100 (% display) are shown. Here, the main peak of Al ₂ O ₃ is the (104) plane, the main peak of MnAl ₂ O ₄ is the (311) plane, the main peak of MnTiO ₃ is the (104) plane and Mn ₃ Al ₂ (SiO ₄ ) ₃ . The main peak was the (420) plane.

  In addition, as an indicator of chemical resistance, the initial mass of the mullite sintered body and the mass of the mullite sintered body after being immersed in a 40% by weight aqueous solution of potassium hydroxide at 100 ° C. for 5 hours were measured, and the weight decreased. Ratio (“initial mass of mullite sintered body” − “mass of mullite sintered body after being immersed in 40% by weight aqueous solution of potassium hydroxide at 100 ° C. for 5 hours”) / “initial stage of mullite sintered body” The “mass” × 100 [%] was calculated. In addition, as an index for determining deterioration of chemical resistance due to repetition, a test of immersing in an aqueous solution of 40% by weight potassium hydroxide at 100 ° C. for 5 hours was performed three times, and the weight loss rate of each time was measured. The rate of change of the weight reduction rate was calculated by (“third weight reduction rate” − “first weight reduction rate”) / “first weight reduction rate” × 100 [%].

  Further, a mullite sintered body prepared by laminating 30 layers of the obtained green sheets under the same degreasing and firing conditions as described above was used to obtain a width of 3 mm and a thickness using a plane polishing machine. A sample having a shape of 2 mm and a length of 1 mm was processed to prepare a sample for TMA analysis (thermomechanical analysis), and the thermal expansion coefficient was measured.

  Furthermore, the modulus of elasticity was measured by an ultrasonic pulse method using a sample of a mullite sintered body whose thermal expansion coefficient was measured, and Young's modulus was obtained.

  In addition, a conductive paste prepared by making Cu powder and W powder 45% by volume and W 55% by volume on the produced green sheet is printed on the surface of each green sheet and in the through hole. A green sheet with a conductive paste printed thereon was prepared.

  Next, after 30 layers of green sheets coated with this conductive paste were aligned and laminated and pressure-bonded, this laminate was fired under the same degreasing and firing conditions as above to produce a probe card ceramic wiring board. did. The substrate size was 340 mm × 340 mm and the thickness was 6 mm.

  Next, after polishing the surface of the produced probe card ceramic wiring board and removing the land pattern, the surface of the probe card ceramic wiring board is made of titanium and copper having a thickness of about 2 μm by sputtering. Conductive thin films were formed in order.

  Next, a conductive thin film of titanium and copper is patterned by photolithography, and nickel and gold electrolytic plating films are formed in this order on the copper surface, and on the via-hole conductor on the surface of the probe card ceramic wiring board. A surface wiring layer was formed.

  Next, a Si measurement terminal (probe pin) was joined to the surface of the surface wiring layer formed on the surface of the probe card ceramic wiring substrate to produce a probe card.

Next, the probe pin that is the measurement terminal of the probe card is brought into contact with the upper surface of the Si wafer placed on the stage and held at a temperature of 90 ° C., using a stereomicroscope from the side of the probe card, The positional deviation between the probe pin and the measurement pad formed on the surface of the Si wafer was observed. In this case, when the measurement terminal (probe pin) and the measurement pad formed on the outermost periphery of the probe card and the Si wafer are observed, the tip of the measurement terminal (probe pin) is displaced laterally from the measurement pad. Was assumed to be misaligned. In addition, the content of titanium contained in the insulating substrate 11 is determined by dissolving the insulating substrate cut out from the probe card wiring board once in an acid, and then first performing qualitative analysis of elements contained in the dielectric ceramic by atomic absorption analysis. Then, the diluted standard solution for each identified element was used as a standard sample and quantified by ICP emission spectroscopic analysis. In this case, the contents of aluminum (Al), silicon (Si) and titanium (Ti) contained in the insulating substrate are obtained by ICP (Inductively Coupled Plasma) analysis, and mullite (3Al) is obtained from aluminum (Al) and silicon (Si). ₂ O ₃ · 2SiO ₂ ) and TiO ₂ .

  The composition of the copper and tungsten in the internal wiring layer is first cut out from the probe card wiring board where the internal wiring layer is formed, and an ICP (Inductively Coupled Plasma) analysis is performed on a solution obtained by dissolving this in an acid. Thus, the contents of copper and tungsten, which are conductor materials, were determined by mass. Next, the volume of copper and tungsten determined as masses was divided by the respective densities to determine the respective volumes, and then the ratio of copper and tungsten when the total volume of copper and tungsten was 100% was determined. . In addition, it was confirmed that the internal wiring layer formed on the produced probe card wiring board was 45% by volume of copper and 55% by volume of tungsten. These results are shown in Tables 1-3.

As is clear from the results in Tables 1 to 3, the samples (sample Nos. 1 to 22) in which the insulating base constituting the ceramic wiring board for probe cards is formed of a mullite sintered body are the thermal expansion coefficients of the ceramic insulating layers. (Room temperature to 300 ° C.) is 3.5 to 4.5 × 10 ⁻⁶ / ° C., and was formed on the surface of the Si wafer and the measurement terminal provided on the probe card ceramic wiring board during the thermal load test. There was no misalignment with the measurement pad, and it could be suitably used for inspection of electrical characteristics.

Further, when the insulating substrate constituting the ceramic circuit board for probe card is made of mullite as a main crystal phase, contains Mn and Ti, and the X-ray diffraction intensity of the (210) plane of the mullite is 100%, Al The X-ray diffraction intensity of the (104) plane of ₂ O ₃ is 78 to 120%, and the X-ray diffraction intensity of the (420) plane of Mn ₃ Al ₂ (SiO ₄ ) ₃ is 0.13 to 0.7%. In addition, in the samples (samples Nos. ₃ , ₄ , 8, 10-13, 16 and 18-20) formed of the mullite sintered body not containing MnAl ₂ O ₄ and MnTiO ₃ , the chemical resistance test The rate of change in weight at a temperature of 0.12% by mass or less was obtained, and the rate of change in weight loss was also as small as 37% or less in the repeated test of the chemical resistance test.

Further, an insulating substrate constituting the ceramic wiring board probe card, with respect to 100 wt% mullite, samples formed by mullite sintered body containing 1 to 5 mass% of Ti in terms of TiO ₂ (sample No.3 , 4, 8, 11-13, 16 and 18-20), the weight loss change rate was 27% or less in the repeated test of the chemical resistance test.

In contrast, the sample (sample No. 23) in which the insulating base 11 constituting the probe card ceramic wiring substrate 1 is formed of a ceramic sintered body mainly composed of alumina has a thermal expansion coefficient of 6.5 × 10 6. ^-6 / ° C, which is larger than that of Si wafers, so that the tip of the probe pin when the measurement terminals (probe pins) and measurement pads formed on the outermost periphery of the probe card and Si wafer were observed during the thermal load test. Is not touching the measurement pad, and there is a displacement between the measurement terminal provided on the probe card ceramic wiring substrate and the measurement pad formed on the surface of the Si wafer.

1: Ceramic wiring board for probe card 11: Insulating substrate 12: Internal wiring layer 13: Surface wiring layer 14: Via hole conductor 2: Probe card 21: Measurement terminal

Claims (3)

When mullite is the main crystal phase , contains Mn and Ti, and the X-ray diffraction intensity of the (210) plane of the mullite is 100%, the X-ray diffraction intensity of the (104) plane of Al ₂ O ₃
The degree of X-ray diffraction of the (420) plane of Mn ₃ Al ₂ (SiO ₄ ) ₃ is 0.13 to 0.70%, and it does not contain MnAl ₂ O ₄ and MnTiO ₃ And an insulating base made of a ceramic sintered body, and a composite conductor of copper and tungsten having a composition of 40 to 60% by volume of copper and 40 to 60% by volume of tungsten provided in the insulating base. A ceramic wiring board for probe cards. The ceramic wiring board for a probe card according to claim 1, wherein the ceramic sintered body contains 1 to 5 mass% of the Ti in terms of TiO ₂ with respect to 100 mass% of the mullite. Claim 1 or 2 and the surface wiring layer is provided on the surface of the ceramic wiring board probe card according to, that the measurement terminal for measuring the electrical characteristics of a semiconductor element to the surface wiring layer which are connected Featured probe card.

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