JP5510862B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5510862B2
JP5510862B2 JP2009056761A JP2009056761A JP5510862B2 JP 5510862 B2 JP5510862 B2 JP 5510862B2 JP 2009056761 A JP2009056761 A JP 2009056761A JP 2009056761 A JP2009056761 A JP 2009056761A JP 5510862 B2 JP5510862 B2 JP 5510862B2
Authority
JP
Japan
Prior art keywords
fuse
metal
wiring
metal wiring
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009056761A
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English (en)
Japanese (ja)
Other versions
JP2010212445A (ja
JP2010212445A5 (enExample
Inventor
茂樹 大林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009056761A priority Critical patent/JP5510862B2/ja
Priority to US12/718,593 priority patent/US8558343B2/en
Publication of JP2010212445A publication Critical patent/JP2010212445A/ja
Publication of JP2010212445A5 publication Critical patent/JP2010212445A5/ja
Application granted granted Critical
Publication of JP5510862B2 publication Critical patent/JP5510862B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2009056761A 2009-03-10 2009-03-10 半導体装置 Expired - Fee Related JP5510862B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009056761A JP5510862B2 (ja) 2009-03-10 2009-03-10 半導体装置
US12/718,593 US8558343B2 (en) 2009-03-10 2010-03-05 Semiconductor device having a fuse element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009056761A JP5510862B2 (ja) 2009-03-10 2009-03-10 半導体装置

Publications (3)

Publication Number Publication Date
JP2010212445A JP2010212445A (ja) 2010-09-24
JP2010212445A5 JP2010212445A5 (enExample) 2012-03-22
JP5510862B2 true JP5510862B2 (ja) 2014-06-04

Family

ID=42729995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009056761A Expired - Fee Related JP5510862B2 (ja) 2009-03-10 2009-03-10 半導体装置

Country Status (2)

Country Link
US (1) US8558343B2 (enExample)
JP (1) JP5510862B2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090121470A (ko) * 2008-05-22 2009-11-26 주식회사 하이닉스반도체 임피던스 교정 회로를 포함하는 반도체 메모리 장치
JP5372578B2 (ja) * 2009-04-09 2013-12-18 ルネサスエレクトロニクス株式会社 半導体装置
JP5561668B2 (ja) * 2009-11-16 2014-07-30 ルネサスエレクトロニクス株式会社 半導体装置
US8970190B2 (en) * 2011-03-10 2015-03-03 Microchip Technology Incorporated Using low voltage regulator to supply power to a source-biased power domain
US8633707B2 (en) * 2011-03-29 2014-01-21 International Business Machines Corporation Stacked via structure for metal fuse applications
US8421186B2 (en) * 2011-05-31 2013-04-16 International Business Machines Corporation Electrically programmable metal fuse
US8610243B2 (en) * 2011-12-09 2013-12-17 Globalfoundries Inc. Metal e-fuse with intermetallic compound programming mechanism and methods of making same
KR102127178B1 (ko) * 2014-01-23 2020-06-26 삼성전자 주식회사 반도체 장치의 이-퓨즈 구조체
US9666587B1 (en) 2016-01-29 2017-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
KR102471641B1 (ko) * 2016-02-04 2022-11-29 에스케이하이닉스 주식회사 퓨즈구조 및 그를 포함하는 반도체장치
US10020252B2 (en) 2016-11-04 2018-07-10 Micron Technology, Inc. Wiring with external terminal
US10141932B1 (en) 2017-08-04 2018-11-27 Micron Technology, Inc. Wiring with external terminal
US10304497B2 (en) 2017-08-17 2019-05-28 Micron Technology, Inc. Power supply wiring in a semiconductor memory device
US10163783B1 (en) * 2018-03-15 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Reduced area efuse cell structure
US10593619B1 (en) * 2018-08-28 2020-03-17 Nsp Usa, Inc. Transistor shield structure, packaged device, and method of manufacture
US11164825B2 (en) 2018-10-31 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. CoWos interposer with selectable/programmable capacitance arrays
US10971447B2 (en) * 2019-06-24 2021-04-06 International Business Machines Corporation BEOL electrical fuse

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4959267B2 (ja) * 2006-03-07 2012-06-20 ルネサスエレクトロニクス株式会社 半導体装置および電気ヒューズの抵抗値の増加方法
JP4884077B2 (ja) 2006-05-25 2012-02-22 ルネサスエレクトロニクス株式会社 半導体装置
JP4995512B2 (ja) * 2006-08-23 2012-08-08 ルネサスエレクトロニクス株式会社 半導体装置

Also Published As

Publication number Publication date
US8558343B2 (en) 2013-10-15
US20100230780A1 (en) 2010-09-16
JP2010212445A (ja) 2010-09-24

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