JP5485222B2 - 回路接続用接着フィルム、これを用いた回路接続構造体及び回路部材の接続方法 - Google Patents
回路接続用接着フィルム、これを用いた回路接続構造体及び回路部材の接続方法 Download PDFInfo
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- JP5485222B2 JP5485222B2 JP2011111532A JP2011111532A JP5485222B2 JP 5485222 B2 JP5485222 B2 JP 5485222B2 JP 2011111532 A JP2011111532 A JP 2011111532A JP 2011111532 A JP2011111532 A JP 2011111532A JP 5485222 B2 JP5485222 B2 JP 5485222B2
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Description
まず、図1を参照して、本実施形態の回路接続用接着フィルム10について説明する。図1は、本発明の一実施形態に係る回路接続用接着フィルムを示す模式断面図である。回路接続用接着フィルム10は、接着剤組成物4b及び導電粒子5を含有する導電性接着剤層3bと、導電性接着剤層3b上に形成された、接着剤組成物4aを含有する絶縁性接着剤層3aとを有する。
絶縁性接着剤層3aは、(a)フィルム形成材(以下、場合により「(a)成分」という)、(b)エポキシ当量が200〜3000であるエポキシ樹脂(以下、場合により「(b)成分」という)及び(c)潜在性硬化剤(以下、場合により「(c)成分」という)を含む接着剤組成物4aを含有する。
導電性接着剤層3bに含まれる接着剤組成物4bは、フィルム状に形成でき、回路部材接続時に回路部材の変形を抑制できるものであればよく、絶縁性接着剤層3aに含まれる接着剤組成物4aと同じでも異なっていてもよい。但し、上述の成分の種類及び配合量は、絶縁性接着剤層3aの流動性が、導電性接着剤層3bの流動性よりも大きくなるように調整されることが好ましい。
図2は、一対の回路部材、すなわち基板1と半導体素子2との間に、本実施形態に係る回路接続用接着フィルム10を介在させた積層体200を示す模式断面図であり、図3は、図2に示す積層体200を加熱及び加圧して得られた、本実施形態に係る回路接続構造体100を示す模式断面図である。
回路接続構造体100は、ガラス基板1aの主面上に配線パターン1bが形成された基板1と、ICチップ2aの主面上にバンプ電極2bが形成された半導体素子2と、基板1及び半導体素子2の間に介在する回路接続用接着フィルム10と、を配線パターン1b及びバンプ電極2bが対向配置された状態で加熱及び加圧して、配線パターン1b及びバンプ電極2bを電気的に接続する方法によって得られる。
導電性接着剤層及び絶縁性接着剤層を作製するための各材料を以下の通り準備した。また、それぞれのフィルム形成材を約10mg秤量し、TA Instruments社製のDSC装置(製品名:Q1000)でJIS K7121−1987の規定に従って、フィルム形成材のTgを測定した。なお、エポキシ樹脂のエポキシ当量はJIS K 7236に準じた方法で測定した。
「FX−316」(東都化成製、製品名):フェノキシ樹脂(Tg:66℃)
(b)成分:エポキシ当量が200〜3000であるエポキシ樹脂
「エピコート872」(ジャパンエポキシレジン製、製品名):可とう性エポキシ樹脂(エポキシ当量600〜700)
「エピコート4004P」(ジャパンエポキシレジン製、製品名):ビスフェノールF型エポキシ樹脂(エポキシ当量880)
「EXA−4816」(DIC製、製品名):柔軟性エポキシ樹脂(エポキシ当量403)
「EXA−4822」(DIC製、製品名):強靭性エポキシ樹脂(エポキシ当量385)
「EXA−4850−150」(DIC製、製品名):柔軟性エポキシ樹脂(エポキシ当量450)
(b)’成分:(b)成分以外のエポキシ樹脂
「YL−980」(ジャパンエポキシレジン製、製品名):ビスフェノールA型エポキシ樹脂(エポキシ当量180〜190)
「YL−983U」(ジャパンエポキシレジン製、製品名):ビスフェノールF型エポキシ樹脂(エポキシ当量165〜175)
「エピコート1032H60」(ジャパンエポキシレジン製、製品名):ノボラック型エポキシ樹脂(エポキシ当量163〜175)
「EXA−4710」(DIC製、製品名):高耐熱エポキシ樹脂(エポキシ当量170)
「エピコート1256」(ジャパンエポキシレジン製、製品名):フェノキシ型エポキシ樹脂(エポキシ当量7500〜8500)
(c):潜在性硬化剤
「ノバキュア」(旭化成ケミカルズ製、製品名)
(d):絶縁性粒子
「X−52−7030」(信越シリコーン製、製品名):シリコーン微粒子
(導電粒子)
「ミクロパールAU」(積水化学製、製品名)
(添加剤)
「SH6040」(東レダウコーニング製、製品名):シランカップリング剤
<導電性接着剤層>
フェノキシ樹脂「FX−316」30質量部、エポキシ樹脂「エピコート872」及び「エピコート4004P」それぞれ10質量部、潜在性硬化剤「ノバキュア」30質量部並びにシランカップリング剤「SH6040」1質量部を、トルエン100質量部に溶解した後、導電粒子「ミクロパールAU」19質量部を加え、導電性接着剤層形成用塗布液を調製した。
フェノキシ樹脂「FX−316」50質量部、エポキシ樹脂「エピコート872」28質量部、潜在性硬化剤「ノバキュア」18質量部及びシランカップリング剤「SH6040」1質量部を、溶剤であるトルエン100質量部に溶解した後、シリコーン微粒子「X−52−7030」3質量部を加え、絶縁性接着剤層形成用塗布液を調製した。
上記で得られた導電性接着剤層と絶縁性接着剤層とを、50℃で加熱しながらロールラミネータでラミネートし、厚みが25μmの回路接続用接着フィルムを得た。
表2に示す配合割合(質量部)で各成分を添加し、絶縁性接着剤層形成用塗布液を調製した以外は、実施例1と同様に操作して回路接続用接着フィルムを作製した。
<基板及び半導体素子の準備>
基板として、ガラス基板(コーニング#1737、38mm×28mm、厚み0.3mm)の表面にITO(Indium Tin Oxide)の配線パターン(パターン幅50μm、電極間スペース5μm)を形成させたものを準備した。半導体素子として、ICチップ(外形17mm×17mm、厚み0.3mm、バンプの大きさ50μm×50μm、バンプ間スペース50μm、バンプ高さ15μm)を準備した。
上記実施例及び比較例で作製した回路接続用接着フィルムを用い、ICチップとガラス基板との接続を、以下に示すように行った。なお、接続には、セラミックヒーターからなるステージ(150mm×150mm)及びツール(3mm×20mm)から構成される加熱圧着具を用いた。
(フィルム形成性)
作製した回路接続用接着フィルムについて、以下の基準でフィルム形成性を評価した。なお、「フィルムにできる」とは、作製したフィルムが容易に裂けたり、割れたり、べたついたりすることの無いことを意味する。フィルム形成性の評価結果を表3に示す。
A:フィルムにできる
B:フィルムにできない
図4は、ガラス基板の反りの評価方法を示す模式断面図である。図4に示す回路接続構造体100は、基板1、半導体素子2及びこれらを接合する硬化した回路接続用接着フィルム10から構成される。Lは、半導体素子2の中心における基板1の下面の高さを0としたときの、半導体素子2の中心から12.5mm離れた場所までの基板1の下面の高さのうち最も大きい値を表す。反りの評価は、Lを指標として行った。Lの値が小さいほど、反りが小さいことを示す。Lの値が15μm未満の場合を「A」、15μm以上の場合を「B」として2段階で評価した。反りの評価結果を表3に示す。
作製した回路接続構造体を用いてガラス基板の回路と半導体素子の電極間の抵抗値を測定した。測定には、マルチメータ(装置名:MLR21、ETAC社製)を用い、温度85℃、湿度85%RH、1000時間のTHTテスト(Thermal Humidity Test)後に行った。THTテスト後の抵抗値に基づいて、接続信頼性を以下の基準に従ってA又はBの2段階で評価した。各回路接続構造体の測定結果を表3に示す。
A:10Ω未満
B:10Ω以上
Claims (8)
- 厚み0.3mm以下の第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、
厚み0.3mm以下の第2の回路基板の主面上に第2の回路電極が形成され、前記第2の回路電極が前記第1の回路電極と対向するように配置され、前記第2の回路電極が前記第1の回路電極と電気的に接続されている第2の回路部材と、
前記第1の回路部材と前記第2の回路部材との間に介在する接続部と、
を備え、
前記接続部が、回路接続用接着フィルムの硬化物であり、
前記第1の回路基板がガラス基板であり、前記第2の回路部材が半導体素子であり、
前記回路接続用接着フィルムが、接着剤組成物及び導電粒子を含有する導電性接着剤層と、接着剤組成物を含有し、導電粒子を含有しない絶縁性接着剤層と、を備え、
前記絶縁性接着剤層に含有される接着剤組成物が、(a)フィルム形成材、(b)エポキシ当量が200〜2500であるエポキシ樹脂及び(c)潜在性硬化剤を含む、回路接続構造体。 - 前記導電性接着剤層及び/又は前記絶縁性接着剤層が、(d)絶縁性粒子を更に含有する、請求項1記載の回路接続構造体。
- 前記導電性接着剤層に含有される接着剤組成物が、(a)フィルム形成材、(b)エポキシ樹脂及び(c)潜在性硬化剤を含む、請求項1又は2記載の回路接続構造体。
- 前記導電性接着剤層に含有される接着剤組成物に含まれる(b)エポキシ樹脂のエポキシ当量が200〜2500である、請求項3記載の回路接続構造体。
- 厚み0.3mm以下の第1の回路基板の主面上に第1の回路電極が形成された第1の回路部材と、
厚み0.3mm以下の第2の回路基板の主面上に第2の回路電極が形成された第2の回路部材と、
前記第1の回路部材及び前記第2の回路部材の間に配置された回路接続用接着フィルムと、
を前記第1の回路電極と前記第2の回路電極とが対向配置された状態で加熱及び加圧して、前記第1の回路電極と前記第2の回路電極とを電気的に接続する、回路接続構造体の製造方法であり、
前記第1の回路基板がガラス基板であり、前記第2の回路部材が半導体素子であり、
前記回路接続用接着フィルムが、接着剤組成物及び導電粒子を含有する導電性接着剤層と、接着剤組成物を含有し、導電粒子を含有しない絶縁性接着剤層と、を備え、
前記絶縁性接着剤層に含有される接着剤組成物が、(a)フィルム形成材、(b)エポキシ当量が200〜2500であるエポキシ樹脂及び(c)潜在性硬化剤を含む、製造方法。 - 前記導電性接着剤層及び/又は前記絶縁性接着剤層が、(d)絶縁性粒子を更に含有する、請求項5記載の製造方法。
- 前記導電性接着剤層に含有される接着剤組成物が、(a)フィルム形成材、(b)エポキシ樹脂及び(c)潜在性硬化剤を含む、請求項5又は6記載の製造方法。
- 前記導電性接着剤層に含有される接着剤組成物に含まれる(b)エポキシ樹脂のエポキシ当量が200〜2500である、請求項7記載の製造方法。
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