JP5473397B2 - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP5473397B2
JP5473397B2 JP2009117333A JP2009117333A JP5473397B2 JP 5473397 B2 JP5473397 B2 JP 5473397B2 JP 2009117333 A JP2009117333 A JP 2009117333A JP 2009117333 A JP2009117333 A JP 2009117333A JP 5473397 B2 JP5473397 B2 JP 5473397B2
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region
ion implantation
type
conductivity type
drift layer
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JP2009117333A
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Japanese (ja)
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JP2010267762A (ja
JP2010267762A5 (enExample
Inventor
健一 大塚
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2009117333A priority Critical patent/JP5473397B2/ja
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Publication of JP2010267762A5 publication Critical patent/JP2010267762A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
    • H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
    • H01L21/047—Making n or p doped regions or layers, e.g. using diffusion using ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2009117333A 2009-05-14 2009-05-14 半導体装置およびその製造方法 Active JP5473397B2 (ja)

Priority Applications (1)

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JP2009117333A JP5473397B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

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JP2009117333A JP5473397B2 (ja) 2009-05-14 2009-05-14 半導体装置およびその製造方法

Publications (3)

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JP2010267762A JP2010267762A (ja) 2010-11-25
JP2010267762A5 JP2010267762A5 (enExample) 2011-12-22
JP5473397B2 true JP5473397B2 (ja) 2014-04-16

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604552A (zh) * 2015-12-02 2018-09-28 Abb瑞士股份有限公司 半导体装置以及用于制造这种半导体装置的方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9362392B2 (en) 2012-04-24 2016-06-07 Fuji Electric Co., Ltd. Vertical high-voltage semiconductor device and fabrication method thereof
JP6283122B2 (ja) * 2014-11-26 2018-02-21 株式会社日立製作所 半導体スイッチング素子および炭化珪素半導体装置の製造方法
JP6479615B2 (ja) 2015-09-14 2019-03-06 株式会社東芝 半導体装置の製造方法
JP2017063079A (ja) * 2015-09-24 2017-03-30 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
US10374075B2 (en) 2015-11-12 2019-08-06 Mitsubishi Electric Corporation Silicon carbide semiconductor device and manufacturing method for the same
JP6454447B2 (ja) 2015-12-02 2019-01-16 アーベーベー・シュバイツ・アーゲー 半導体装置の製造方法
JP7081087B2 (ja) * 2017-06-02 2022-06-07 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
JP6592119B2 (ja) * 2018-01-25 2019-10-16 株式会社日立製作所 半導体スイッチング素子および炭化珪素半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3959856B2 (ja) * 1998-07-31 2007-08-15 株式会社デンソー 炭化珪素半導体装置及びその製造方法
JP2007019146A (ja) * 2005-07-06 2007-01-25 Toshiba Corp 半導体素子
JP4627272B2 (ja) * 2006-03-09 2011-02-09 三菱電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
JP2009302436A (ja) * 2008-06-17 2009-12-24 Denso Corp 炭化珪素半導体装置の製造方法
JP5405089B2 (ja) * 2008-11-20 2014-02-05 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108604552A (zh) * 2015-12-02 2018-09-28 Abb瑞士股份有限公司 半导体装置以及用于制造这种半导体装置的方法
CN108604552B (zh) * 2015-12-02 2022-03-22 日立能源瑞士股份公司 半导体装置以及用于制造这种半导体装置的方法

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