JP5473218B2 - 積層型有機感光デバイス - Google Patents
積層型有機感光デバイス Download PDFInfo
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- JP5473218B2 JP5473218B2 JP2007524873A JP2007524873A JP5473218B2 JP 5473218 B2 JP5473218 B2 JP 5473218B2 JP 2007524873 A JP2007524873 A JP 2007524873A JP 2007524873 A JP2007524873 A JP 2007524873A JP 5473218 B2 JP5473218 B2 JP 5473218B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
- H10K30/57—Photovoltaic [PV] devices comprising multiple junctions, e.g. tandem PV cells
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
- H10K30/211—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions comprising multiple junctions, e.g. double heterojunctions
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- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
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- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
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Description
ff={Imax Vmax}/{Isc Voc} (1)
上式で、IscおよびVocが実際の使用では決して同時に得られないので、ffは常に1未満である。それにもかかわらず、fが1に近づくと、デバイスは、より小さい直列抵抗または内部抵抗を有し、したがって、最適条件下においてより大きなパーセンテージのIscとVocの積を負荷に伝達する。Pineがデバイスに入る電力とすると、デバイスの電力効率ηpは、下式によって計算することが可能である。
ηp=ff*(Isc*Voc)/Pinc
ηp〜ηEXT=ηA*ηED*ηcc
ηEXT =ηA*ηINT
本発明の一実施形態において、効率的な光起電力セルが提供される。2つの積層ハイブリッド平面混合ヘテロ接合セルを有するセルが、透明導電性ITOで事前にコーティングされたガラス基板の上に製作された。デバイスは、構造:ITO/75Å CuPc/122Å CuPc:C60(重量で1.2:1)/80Å C60/50Å PTCBI/5Å Ag/50Å m-MTDATA:F4-TCNQ/60Å CuPc/132Å CuPc:C60(重量で1.2:1)/160Å C60/75Å BCP/Agを有する。カソードから離れているセルは、550nmから750nmのスペクトル領域において吸収するCuPcにおいてわずかに豊富であり、一方、カソードにより近いセルは、350nmから550mmのスペクトル領域において吸収するC60において豊富である。最大電力効率が、1から4サンのシミュレーションしたAM1.5G太陽照明下において(5.6±0.3)%と測定された。
110 基板
115 アノード
120 アノード平滑層
125 ドナー層
130 アクセプター層
135 遮断層
140 カソード
200 有機光活性デバイス、有機セル
210 基板
220 第1電極
230 第1(または「フロント」)有機光活性領域
231 第1有機層
232 第2有機層
233 第3有機層
234 励起子遮断層
240 介在層
241 ナノ粒子
250 第2(または「バック」)光活性領域
251 有機アクセプター層
252 有機層
253 有機ドナー層
254 第2励起子遮断層
260 第2電極
Claims (21)
- 第1電極と、
第2電極と、
前記第1電極と前記第2電極との間に配置された第1有機光活性領域と、
前記第1電極と前記第2電極との間に配置された第2有機光活性領域とを備え、
前記第1有機光活性領域および前記第2有機光活性領域の各々が有機アクセプター材料及び有機ドナー材料を備え、
前記第1有機光活性領域および前記第2有機光活性領域が、異なる吸収特性を有し、
反射層を含み、前記第1有機光活性領域および前記第2有機光活性領域が、前記反射層の同じ側面上に配置され、
前記第1有機光活性領域が、前記第2有機光活性領域より前記反射層に近く配置され、前記第2有機光活性領域が、前記第1有機光活性領域より長い波長においてより強い吸収体であることを特徴とする、デバイス。 - デバイスが太陽スペクトルを有する入射光に暴露されるとき、デバイスが光場強度全体の少なくとも10%を吸収することを特徴とする、請求項1に記載のデバイス。
- デバイスが太陽スペクトルを有する入射光に暴露されるとき、デバイスが光場強度全体の少なくとも20%を吸収することを特徴とする、請求項1に記載のデバイス。
- 前記第1有機光活性領域が、前記第2有機光活性領域より前記反射層に近く配置され、前記第2有機光活性領域の上位3つの吸収ピークの少なくとも1つの波長が、前記第1有機光活性領域の上位3つの吸収ピークの少なくとも1つより長いことを特徴とする、請求項1に記載のデバイス。
- 前記第2有機光活性領域の前記3つの上位吸収ピークの少なくとも1つの前記波長が、前記第1有機光活性領域の前記3つの上位吸収ピークの少なくとも1つより少なくとも10%長いことを特徴とする、請求項4に記載のデバイス。
- 前記第1電極が、前記反射層であることを特徴とする、請求項1に記載のデバイス。
- 前記第1有機光活性領域の少なくとも一部が、前記第1有機光活性領域に最も近い前記反射層の縁からλ1/4±25%の垂直光路長において配置され、前記第2有機光活性領域の少なくとも一部が、前記第2有機光活性領域に最も近い前記反射層の縁からλ2/4±25%の垂直光路長において配置され、λ1が前記第1有機光活性領域の上位3つの吸収ピークの1つの波長であり、λ2が前記第2有機光活性領域の上位3つの吸収ピークの1つの波長であることを特徴とする、請求項1に記載のデバイス。
- 各光活性領域が、
有機アクセプター材料と、
前記有機アクセプター材料と直接接触している有機ドナー材料とをさらに備えることを特徴とする、請求項1に記載のデバイス。 - 各有機光活性領域が、同じ有機アクセプター材料および有機ドナー材料を含み、前記第1有機光活性領域および前記第2有機光活性領域が、有機アクセプター材料対有機ドナー材料の異なる比率を備えることを特徴とする、請求項8に記載のデバイス。
- 各有機光活性領域の前記有機ドナー材料がCuPcであり、各有機光活性領域の前記有機アクセプター材料がC60であることを特徴とする、請求項9に記載のデバイス。
- 前記第1有機光活性領域の前記有機アクセプター材料および有機ドナー材料が、前記第2有機光活性領域の前記有機アクセプター材料および有機ドナー材料とは異なることを特徴とする、請求項10に記載のデバイス。
- 前記第1有機光活性領域の前記有機ドナー材料がCuPcであり、前記第1有機光活性領域の前記有機アクセプター材料がC60であり、前記第2有機光活性領域の前記有機ドナー材料がPbPcであり、前記第2有機光活性領域の前記有機アクセプター材料がPTCBIであることを特徴とする、請求項11に記載のデバイス。
- 各光活性領域が、
有機アクセプター材料および有機ドナー材料の混合物を備える第1有機層と、
前記第1有機層と直接接触し、前記第1有機層の前記有機ドナー材料の非混合層を備える第2有機層と、
前記第1有機層と直接接触し、前記第1有機層の前記有機アクセプター材料の非混合層を備える第3有機層とをさらに備え、
励起子遮断層が、前記第3有機層に隣接し、かつそれと直接物理的に接触して配置されることを特徴とする、請求項1に記載のデバイス。 - 各光活性領域が、
有機アクセプター材料および有機ドナー材料の混合物を備える第1有機層と、
前記第1有機層と直接接触し、前記第1有機層の前記有機ドナー材料の非混合層を備える第2有機層とをさらに備え、
励起子遮断層が、前記第1有機層に隣接し、かつそれと直接物理的に接触して配置されることを特徴とする、請求項1に記載のデバイス。 - 各光活性領域が、
有機アクセプター材料および有機ドナー材料の混合物を備える第1有機層と、
前記第1有機層と直接接触し、前記第1有機層の前記有機アクセプター材料の非混合層を備える第2有機層とからなり、
励起子遮断層が、前記第2有機層に隣接し、かつそれと直接物理的に接触して配置されることを特徴とする、請求項1に記載のデバイス。 - 各光活性領域が、
前記有機ドナー材料の非混合層を備える第1有機層と、
前記有機ドナー材料の非混合層を備える前記第1有機層と直接接触する第2有機層とをさらに備え、
励起子遮断層が、前記第1有機層に隣接し、かつそれと直接物理的に接触して配置されることを特徴とする、請求項1に記載のデバイス。 - 各光活性領域が、
有機アクセプター材料と有機ドナー材料の混合物を備える第1有機層からなり、
励起子遮断層が前記第1有機層に隣接し、かつそれと直接物理的に接触して配置されることを特徴とする、請求項1に記載のデバイス。 - 前記デバイスが、光起電力デバイスであることを特徴とする、請求項1に記載のデバイス。
- 前記デバイスが、光検出器であることを特徴とする、請求項1に記載のデバイス。
- 前記デバイスが、第3光活性領域をさらに備えることを特徴とする、請求項1に記載のデバイス。
- 第1電極と、
第2電極と、
前記第1電極と前記第2電極との間に配置された第1有機光活性領域と、
前記第1電極と前記第2電極との間に配置された第2有機光活性領域とを備え、
前記第1有機光活性領域および前記第2有機光活性領域の各々が有機アクセプター材料及び有機ドナー材料を備え、
反射層を含み、前記第1有機光活性領域および前記第2有機光活性領域が、前記反射層の同じ側面上に配置され、
前記第1有機光活性領域が、前記第2有機光活性領域より前記反射層に近く配置され、
λ1が前記第1有機光活性領域の上位3つの吸収ピークの1つの波長であり、λ2が前記第2有機光活性領域の上位3つの吸収ピークの1つの波長であり、
λ2が、λ1より少なくとも10%大きく、
前記第1有機光活性領域が、naを最大値が生じる材料の屈折率として、前記波長λ1の光場強度の前記最大値が、前記第1有機光活性領域内、または前記第1有機光活性領域の0.05λ1/na内に存在するような位置に配置され、
前記第2有機光活性領域が、nbを最大値が生じる材料の屈折率として、前記波長λ2の光場強度の前記最大値が、前記第2有機光活性領域内、または前記第1有機光活性領域の0.05λ2/nb内に存在するような位置に配置されることを特徴とする、デバイス。
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JP2012074741A (ja) | 2012-04-12 |
TWI411147B (zh) | 2013-10-01 |
BRPI0513643A (pt) | 2008-05-13 |
CN102610627B (zh) | 2014-12-24 |
US20060027802A1 (en) | 2006-02-09 |
ES2877701T3 (es) | 2021-11-17 |
AU2005271663B2 (en) | 2011-05-12 |
HK1138679A1 (en) | 2010-08-27 |
US7915701B2 (en) | 2011-03-29 |
AR051002A1 (es) | 2006-12-13 |
WO2006017403A3 (en) | 2007-06-07 |
HK1172155A1 (en) | 2013-04-12 |
HK1116300A1 (en) | 2008-12-19 |
KR101219868B1 (ko) | 2013-01-08 |
TW200623478A (en) | 2006-07-01 |
EP1774604A2 (en) | 2007-04-18 |
KR20070053240A (ko) | 2007-05-23 |
EP1774604B1 (en) | 2021-05-26 |
US7375370B2 (en) | 2008-05-20 |
CA2575776C (en) | 2015-05-19 |
AU2005271663A1 (en) | 2006-02-16 |
JP5625002B2 (ja) | 2014-11-12 |
CN102610627A (zh) | 2012-07-25 |
CA2575776A1 (en) | 2006-02-16 |
JP2008509558A (ja) | 2008-03-27 |
US20080224132A1 (en) | 2008-09-18 |
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