JP5466425B2 - Connection apparatus, connection method, and test apparatus - Google Patents

Description

  The present invention relates to a connection device, a connection method, a test device, and a switch device.

  A test apparatus for testing a device formed on a semiconductor wafer is electrically connected to a pad formed on the semiconductor wafer via a probe (Patent Document 1). In such a test apparatus, when the probe is brought into contact with the pad, the surface of the pad is polished (scrubbed) by pressing the tip of the probe against the pad. As a result, the test apparatus removes the dirt and oxide film on the surface of the pad to reduce the contact resistance between the probe and the pad.

JP 2007-225501 A

  By the way, a low dielectric constant semiconductor wafer has a relatively low strength. Therefore, such a test apparatus for testing a semiconductor wafer cannot press the tip of the probe against the pad with a sufficiently strong force. For this reason, it has been difficult for such a test apparatus for testing a semiconductor wafer to sufficiently reduce the contact resistance between the probe and the pad by removing the dirt and oxide film on the surface of the pad.

  In order to solve the above problems, according to a first aspect of the present invention, there is provided a connection device for electrically connecting a first terminal and a second terminal, wherein the first terminal and the second terminal are electrically connected. A holding portion that holds a plurality of magnetic particles and a magnetic field that vibrates between the first terminal and the second terminal, and at least one of the first terminal and the second terminal is used as the plurality of magnetic particles. A connection device, a connection method, and a test device are provided.

  In the second aspect of the present invention, there is provided a connection device for electrically connecting the first terminal and the second terminal, the contact being electrically connected to the first terminal, and the contact being attached to the contact. And a magnetic field generator for applying a vibrating magnetic field to the magnetic body in a state where the contact is in contact with the second terminal, and polishing the terminal by the contact. To do.

  According to a third aspect of the present invention, there is provided a switching device that switches electrical connection between the first terminal and the second terminal, and a conductive magnetic fluid that changes in shape along an applied magnetic field; A storage portion disposed at a position facing the second terminal, holding the magnetic fluid therein, and electrically connected to the first terminal, and electrically connecting the first terminal and the second terminal And a magnetic field generating unit that applies a magnetic field in a direction opposite to the storage unit and the second terminal to the magnetic fluid.

  It should be noted that the above summary of the invention does not enumerate all the necessary features of the present invention. In addition, a sub-combination of these feature groups can also be an invention.

FIG. 1 shows a configuration of a test apparatus 10 according to this embodiment together with a wafer under test 100. FIG. 2 shows the connection relationship of the configuration of the test apparatus 10 according to this embodiment together with the wafer under test 100. FIG. 3 shows an example of the configuration of the connection device 30 together with the test substrate 20 and the wafer under test 100 in a state where no magnetic field is generated. FIG. 4 shows an example of the configuration of the connection device 30 together with the test substrate 20 and the wafer under test 100 in a state where a magnetic field is generated. FIG. 5 shows an example of the state of the plurality of magnetic particles 60 when no magnetic field is applied. FIG. 6 shows an example of the magnetic field applied from the magnetic field generator 52 and an example of the state of the plurality of magnetic particles 60 when the magnetic field is received from the magnetic field generator 52. FIG. 7 shows an example of the oscillating magnetic field applied from the magnetic field generator 52 and an example of the state of the plurality of magnetic particles 60 when receiving the oscillating magnetic field from the magnetic field generator 52. FIG. 8 shows an example of the state of the plurality of magnetic particles 60 when energized. FIG. 9 shows an example of a magnetic field applied from the magnetic field generating unit 52 and an example of the state of the plurality of magnetic particles 60 when they are not connected. FIG. 10 shows the configuration of the connection state of the switch device 70 according to the first modification of the present embodiment, together with the first terminal 41 and the second terminal 42. FIG. 11 shows the configuration of the switch device 70 according to the first modification of the present embodiment in a non-connected state together with the first terminal 41 and the second terminal 42. FIG. 12 shows the configuration of the connection device 30 according to the second modification of the present embodiment, together with the first terminal 41 and the second terminal 42.

  Hereinafter, the present invention will be described through embodiments of the invention, but the following embodiments do not limit the invention according to the claims. In addition, not all the combinations of features described in the embodiments are essential for the solving means of the invention.

  FIG. 1 shows a configuration of a test apparatus 10 according to this embodiment together with a wafer under test 100. FIG. 2 shows the connection relationship of the configuration of the test apparatus 10 according to this embodiment together with the wafer under test 100.

  The test apparatus 10 tests the wafer under test 100. More specifically, the device under test 110 formed on the wafer under test 100 is tested.

  The test apparatus 10 includes a test unit 12, a test substrate 20, and a connection device 30. The test unit 12 generates a test signal for testing the device under test 110. In addition, the test unit 12 compares the response signal output from the device under test 110 with an expected value to determine whether the device under test 110 is good or bad.

  The test substrate 20 gives a test signal generated by the test unit 12 to the device under test 110. Further, the test substrate 20 gives the response signal output from the device under test 110 to the test unit 12.

  The test substrate 20 may be a thin plate, for example. The test substrate 20 may be a semiconductor wafer. If the test substrate 20 is a semiconductor wafer, the test unit 12 may be formed inside the test substrate 20.

  The connection device 30 electrically connects the test substrate 20 and the wafer under test 100. More specifically, the connection apparatus 30 electrically connects the first terminal 41 provided on the test substrate 20 and the second terminal 42 provided on the wafer under test 100. As an example, the connection device 30 connects the plurality of first terminals 41 provided on the test substrate 20 and the plurality of second terminals 42 provided on the wafer under test 100 in a one-to-one relationship. Also good.

FIGS. 3 and 4 show an example of the configuration of the connection device 30 together with the test substrate 20 and the wafer under test 100. FIG. 3 shows an example of the configuration of the connection device 30 in a state where no magnetic field is generated. FIG. 4 shows an example of the configuration of the connection device 30 in a state where a magnetic field is generated.

  The connection device 30 includes a holding unit 50 and a magnetic field generation unit 52. The holding unit 50 is, for example, a thin plate, and is sandwiched between the test substrate 20 and the wafer under test 100 during the test. That is, the holding unit 50 has the test substrate 20 connected to one surface and the wafer under test 100 connected to the other surface.

  The holding unit 50 holds the plurality of conductive magnetic particles 60 between the first terminal 41 of the test substrate 20 and the second terminal 42 of the wafer under test 100. More specifically, the holding unit 50 holds the plurality of magnetic particles 60 at a high density at a position between the first terminal 41 and the second terminal 42 facing each other, and between the first terminal 41 and the second terminal 42 facing each other. A plurality of magnetic particles 60 are held at a low density at positions other than.

  As an example, the conductive magnetic particles 60 may be particles of a ferromagnetic material such as nickel. The diameter of the magnetic particle 60 may be equal to or smaller than the planar shape of the first terminal 41 or the second terminal 42.

  The holding unit 50 holds the plurality of magnetic particles 60 so as to be movable in the holding unit 50. For example, the holding unit 50 may be formed of an elastic material such as silicon rubber, and may hold a plurality of magnetic particles 60 in the elastic material. Moreover, the holding | maintenance part 50 may be formed from a gel-like material, and may hold | maintain the some magnetic particle 60 in the said gel.

  Therefore, when the magnetic particles 60 receive a magnetic field in the thickness direction of the holding portion 50 (a direction corresponding to the opposing direction of the first terminal 41 and the second terminal 42) from the outside, they are aligned in a direction along the magnetic flux. The plurality of magnetic particles 60 aligned in this way can be conducted between the surfaces in the thickness direction of the holding portion 50. That is, the plurality of magnetic particles 60 aligned in this way can conduct between one surface of the holding unit 50 and the other surface.

  In addition, the plurality of magnetic particles 60 are not subjected to a magnetic field from the outside and do not have residual magnetization, and the one surface of the holding unit 50 is not electrically connected to the other surface. . The holding | maintenance part 50 may be an anisotropic conductive sheet as shown by patent 3152166 as an example.

  As an example, the length in the thickness direction of the plurality of magnetic particles 60 in an aligned state may be longer than the thickness of the holding unit 50 in a state where no magnetic field is received. That is, as an example, in the holding unit 50, a portion where the plurality of magnetic particles 60 are aligned may be thicker than other portions.

  The magnetic field generation unit 52 applies a magnetic field in the thickness direction of the holding unit 50 (that is, the opposing direction of the first terminal 41 and the second terminal 42) to the space between the first terminal 41 and the second terminal 42. Further, the magnetic field generator 52 vibrates the magnetic field thus applied in a direction orthogonal to the thickness direction (that is, a direction orthogonal to the opposing direction of the first terminal 41 and the second terminal 42). Furthermore, the magnetic field generator 52 may apply a vibrating magnetic field including magnetic field reversal in the facing direction of the first terminal 41 and the second terminal 42.

  The magnetic field generator 52 includes, as an example, a yoke 62 having a gap in part and a coil 64 that generates a magnetic flux in a magnetic circuit formed by the yoke 62. In such a magnetic field generator 52, the test substrate 20, the holding unit 50, and the wafer under test 100 that are overlapped are inserted into the gap of the yoke 62, and the magnetic flux in the gap is further transferred to the first terminal 41. The position is adjusted so as to pass through the space between the second terminal 42 and the second terminal 42. Thereby, the magnetic field generating unit 52 can apply a magnetic field in the thickness direction of the holding unit 50 to the space between the first terminal 41 and the second terminal 42.

  The magnetic field generation unit 52 vibrates the generation position of the magnetic field applied between the first terminal 41 and the second terminal 42 in a direction orthogonal to the thickness direction of the holding unit 50. For example, the magnetic field generation unit 52 may vibrate the generation position of the magnetic field by adding an oscillating magnetic field in a direction orthogonal to the thickness direction of the holding unit 50. For example, the magnetic field generation unit 52 may physically vibrate the yoke 62 itself in a direction orthogonal to the thickness direction of the holding unit 50.

  FIG. 5 shows an example of the state of the plurality of magnetic particles 60 when no magnetic field is applied. The holding unit 50 is sandwiched between the test substrate 20 and the wafer under test 100 and physically connects the test substrate 20 and the wafer under test 100. In this case, the holding unit 50 concentrates and holds the plurality of magnetic particles 60 between the first terminal 41 provided on the test substrate 20 and the second terminal 42 provided on the wafer under test 100. .

  FIG. 6 shows an example of the magnetic field applied from the magnetic field generator 52 and an example of the state of the plurality of magnetic particles 60 when the magnetic field is received from the magnetic field generator 52. Subsequently, after the holding unit 50 physically connects the test substrate 20 and the wafer under test 100, the magnetic field generation unit 52 includes the first terminal 41 and the second terminal 42 in the space between the first terminal 41 and the second terminal 42. A magnetic field in the direction opposite to the second terminal 42 (that is, the thickness direction of the holding portion 50) is applied. As a result, the magnetic field generation unit 52 aligns the plurality of magnetic particles 60 held in a concentrated manner between the first terminal 41 and the second terminal 42 in the direction in which the first terminal 41 and the second terminal 42 face each other. Can.

  Here, in the aligned magnetic particles 60, the length of the holding unit 50 in the thickness direction is longer than the thickness of the holding unit 50 in a state where no magnetic field is received. Therefore, a force from the holding unit 50 side is applied to each of the first terminal 41 and the second terminal 42 by the plurality of aligned magnetic particles 60.

  FIG. 7 shows an example of the oscillating magnetic field applied from the magnetic field generator 52 and an example of the state of the plurality of magnetic particles 60 when receiving the oscillating magnetic field from the magnetic field generator 52. Subsequently, the magnetic field generation unit 52 vibrates the generation position of the magnetic field applied in the facing direction in a direction orthogonal to the facing direction. When the magnetic field generation position is vibrated in this way, the aligned magnetic particles 60 also vibrate in a direction orthogonal to the facing direction.

  Here, a force is applied to each of the first terminal 41 and the second terminal 42 from the holding unit 50 side by a plurality of aligned magnetic particles 60. Therefore, the magnetic field generation unit 52 applies a magnetic field that oscillates in a direction orthogonal to the opposing direction between the first terminal 41 and the second terminal 42 to thereby align a plurality of the first terminals 41 and the second terminals 42. The magnetic particles 60 can be used for polishing. As a result, the magnetic field generator 52 can remove dirt and oxide films on the surfaces of the first terminal 41 and the second terminal 42.

  In this case, the magnetic field generator 52 applies an oscillating magnetic field including magnetic field reversal between the first terminal 41 and the second terminal 42 as a magnetic field in the opposing direction (magnetic field in the dotted line direction in FIG. 7). Also good. As a result, the magnetic field generator 52 can reduce the residual magnetization of the magnetic particles 60 at the time of magnetic field reversal, so that the force for moving the magnetic particles 60 in the orthogonal direction can be increased. Thereby, the magnetic field generation unit 52 can increase the polishing force for removing dirt, oxide films, and the like on the surfaces of the first terminal 41 and the second terminal 42.

  FIG. 8 shows an example of the state of the plurality of magnetic particles 60 when energized. The magnetic field generator 52 stops the vibration of the aligned magnetic particles 60 after a predetermined time has elapsed. Thereby, the plurality of aligned magnetic particles 60 can be electrically connected between the first terminal 41 and the second terminal 42. In such a state, the test apparatus 10 can test the wafer under test 100.

  In this case, the magnetic field generator 52 applies a static magnetic field in the opposing direction to align the plurality of magnetic particles 60. However, after aligning the alignment state by the plurality of magnetic particles 60, the magnetic field generation unit 52 may stop the generation of the magnetic field in the opposing direction when the alignment state is not broken by residual magnetization.

  FIG. 9 shows an example of a magnetic field applied from the magnetic field generating unit 52 and an example of the state of the plurality of magnetic particles 60 when they are not connected. After the test is completed, the connection device 30 makes a transition from a state in which the first terminal 41 and the second terminal 42 are electrically connected to a state in which they are not connected. In this case, the magnetic field generator 52 attenuates and vibrates the magnetic field in the opposing direction of the first terminal 41 and the second terminal 42.

  Thereby, the magnetic field generation unit 52 can demagnetize the residual magnetization of the plurality of magnetic particles 60. Further, when the magnetic particle 60 and the first terminal 41 and the second terminal 42 are coupled, the magnetic field generation unit 52 can release the coupling.

  As described above, according to the connection device 30 according to the present embodiment, the first terminal 41 provided on the test substrate 20 and the second terminal 42 provided on the wafer under test 100 are electrically connected. can do. Furthermore, according to the connection device 30, dirt, oxide films, and the like on the surfaces of the first terminal 41 and the second terminal 42 can be reliably removed during connection. As a result, according to the connection device 30, the first terminal 41 and the second terminal 42 formed on, for example, a relatively low-strength low-permittivity semiconductor wafer can be connected with a low resistivity. it can.

  If the holding unit 50 is sandwiched between the wafer under test 100 and the test substrate 20 with a physically sufficient pressure, the magnetic particles 60 in the holding unit 50 have the first terminal 41 and the second terminal. A contact pressure can be applied to the surface of 42. Therefore, in such a case, the magnetic field generation unit 52 vibrates in the orthogonal direction (the direction of the solid line in FIG. 7) without aligning the plurality of magnetic particles 60 in the opposing direction of the first terminal 41 and the second terminal 42. A magnetic field may be applied. Even in this way, the connection device 30 can remove the dirt and oxide films on the surfaces of the first terminal 41 and the second terminal 42.

  Further, the magnetic field generator 52 applies a vibrating magnetic field including magnetic field reversal only in the opposing direction (the direction of the dotted line in FIG. 7), and does not apply a magnetic field that vibrates in the orthogonal direction (the direction of the solid line in FIG. 7). May be. Even in this case, the connection device 30 may be able to remove dirt, oxide film, and the like on the surfaces of the first terminal 41 and the second terminal 42 in some cases.

  10 and 11 show the configuration of the switch device 70 according to the first modification of the present embodiment, together with the first terminal 41 and the second terminal 42. FIG. Note that the switch device 70 according to the present modification employs substantially the same configuration and function as the connection device 30 according to the present embodiment described with reference to FIGS. 1 to 9, and thus the connection device 30 according to the present embodiment. The members having substantially the same configuration and function as those of the members included in FIG.

  The switch device 70 according to this modification switches the electrical connection between the first terminal 41 and the second terminal 42. The switch device 70 includes a magnetic fluid 72, a storage unit 74, a support unit 76, and a magnetic field generation unit 52.

  The magnetic fluid 72 changes into a shape along the applied magnetic field. That is, the magnetic fluid 72 is deformed into a shape along the magnetic flux. Furthermore, the magnetic fluid 72 has conductivity. For example, the magnetic fluid 72 may be a plurality of magnetic particles 60 aligned along the direction of magnetic flux.

  The accommodating part 74 is arrange | positioned in the position facing the 2nd terminal 42, and hold | maintains the magnetic fluid 72 inside. Further, the storage portion 74 is formed of a conductive member and is electrically connected to the first terminal 41.

  As an example, the storage portion 74 is a cylindrical member having a conductive bottom portion 77, and is disposed so that the inside of the bottom portion 77 faces the second terminal 42. Further, the bottom 77 is electrically connected to the first terminal 41 via the wiring 78.

  The support part 76 supports the storage part 74. Moreover, the support part 76 is provided with the 1st terminal 41 and the wiring 78 as an example. Further, the support 76 may be provided with the magnetic field generator 52.

  When the first terminal 41 and the second terminal 42 are electrically connected, the magnetic field generator 52 causes the magnetic fluid 72 to generate a magnetic field in the opposing direction of the storage part 74 and the second terminal 42 as shown in FIG. Apply. When such a magnetic field in the opposite direction is applied, the magnetic fluid 72 is deformed into a shape along the magnetic field in the opposite direction. For example, the magnetic fluid 72 changes to an elongated shape in the facing direction, and a part thereof is exposed to the outside of the storage portion 74. As a result, one end portion of the magnetic fluid 72 in the facing direction comes into contact with the surface of the second terminal 42, and the other end portion comes into contact with a part (for example, the bottom portion 77) of the storage portion 74.

  Thereby, the magnetic fluid 72 can electrically connect between the second terminal 42 and the storage portion 74 when a magnetic field in the opposite direction is applied by the magnetic field generation unit 52. That is, the magnetic field generator 52 can electrically connect the first terminal 41 and the second terminal 42 by applying a magnetic field in the opposite direction to the magnetic fluid 72.

  In addition, when the first terminal 41 and the second terminal 42 are not electrically connected, the magnetic field generation unit 52 generates a magnetic field that holds the magnetic fluid 72 inside the storage unit 74 as illustrated in FIG. 11. Apply to. For example, when the first terminal 41 and the second terminal 42 are electrically disconnected, the magnetic field generation unit 52 stores a magnetic field orthogonal to the facing direction of the storage unit 74 and the second terminal 42 in the storage unit 74. The applied magnetic fluid 72 is applied.

  When such a magnetic field orthogonal to the opposing direction is applied, the magnetic fluid 72 is deformed into a shape along the magnetic field orthogonal to the opposing direction. As a result, the magnetic fluid 72 remains inside the storage portion 74 and does not contact the second terminal 42.

  Thus, when the magnetic fluid 72 is applied with a magnetic field (for example, a magnetic field in a direction orthogonal to the opposing direction) that holds the magnetic fluid 72 inside the storage portion 74 by the magnetic field generation unit 52, the second terminal 42 and the storage portion 74. Can be electrically disconnected from each other. That is, the magnetic field generating unit 52 applies a magnetic field (for example, a magnetic field in a direction orthogonal to the facing direction) that holds the magnetic fluid 72 inside the storage unit 74 to the magnetic fluid 72, whereby the first terminal 41 and the second terminal 42 are applied. Can be electrically disconnected.

  As described above, according to the switch device 70 according to the present modification, the electrical connection between the first terminal 41 and the second terminal 42 can be switched.

  FIG. 12 shows the configuration of the connection device 30 according to the second modification of the present embodiment, together with the first terminal 41 and the second terminal 42. Note that the switch device 70 according to the present modification employs substantially the same configuration and function as the connection device 30 according to the present embodiment described with reference to FIGS. 1 to 9, and thus the connection device 30 according to the present embodiment. The members having substantially the same configuration and function as those of the members included in FIG.

  The connection device 30 according to this modification electrically connects the first terminal 41 and the second terminal 42. The connection device 30 includes a contact 92, a magnetic body 94, a support part 96, and a magnetic field generation part 52.

  The contact 92 is electrically connected to the first terminal 41. For example, the contact 92 may be a conductive probe having one end fixed to the support portion 96 and the other end being a movable free end. For example, the contact 92 is electrically connected to the first terminal 41 via a wiring 98 formed in the support portion 96. Furthermore, as an example, the free end end portion of the contact 92 contacts the magnetic body 94.

  The magnetic body 94 is attached to the contact 92. For example, the magnetic body 94 is attached in the vicinity of the free end side of the contact 92.

  The support part 96 supports the contact 92. Further, the support portion 96 moves the contact 92 to a position where the free end of the contact 92 contacts the second terminal 42. Moreover, the support part 96 may be provided with the 1st terminal 41 and the wiring 78 as an example. Furthermore, the support part 96 may be provided with part or all of the magnetic field generation part 52 as an example.

  The magnetic field generator 52 applies a vibrating magnetic field to the magnetic body 94 in a state where the contact 92 is in contact with the second terminal 42, and the terminal is polished by the contact 92. More specifically, the magnetic field generator 52 applies a magnetic field that vibrates to the magnetic body 94 to vibrate the magnetic body 94. When the magnetic body 94 vibrates, the tip portion of the contact 92 also vibrates. Therefore, when the tip portion of the contact 92 is vibrated, the surface of the second terminal 42 in contact with the tip portion is polished. As an example, the magnetic field generation unit 52 may give a magnetic field to the magnetic body 94 before electrical connection between the first terminal 41 and the second terminal 42.

  As described above, according to the connection device 30 according to the second modification, the contact portion of the contact 92 with the second terminal 42 is vibrated prior to the electrical connection. Thereby, according to the connection apparatus 30, the surface of the 2nd terminal 42 can be grind | polished and the stain | pollution | contamination, oxide film, etc. of the surface of the 2nd terminal 42 can be removed reliably. Thereby, according to the connection apparatus 30, between the 1st terminal 41 and the 2nd terminal 42 can be connected with a low resistivity.

  As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above-described embodiment. It is apparent from the scope of the claims that the embodiments added with such changes or improvements can be included in the technical scope of the present invention.

  The order of execution of each process such as operations, procedures, steps, and stages in the apparatus, system, program, and method shown in the claims, the description, and the drawings is particularly “before” or “prior to”. It should be noted that the output can be realized in any order unless the output of the previous process is used in the subsequent process. Regarding the operation flow in the claims, the description, and the drawings, even if it is described using “first”, “next”, etc. for convenience, it means that it is essential to carry out in this order. It is not a thing.

10 test apparatus, 12 test section, 20 test substrate, 30 connection apparatus, 41 first terminal, 42 second terminal, 50 holding section, 52 magnetic field generation section, 60 magnetic particles, 62 yoke, 64 coil, 70 switch apparatus, 72 Magnetic fluid, 74 Storage portion, 76 Support portion, 77 Bottom portion, 78 Wiring, 92 Contact, 94 Magnetic body, 96 Supporting portion, 98 Wiring, 100 Wafer under test, 110 Device under test

Claims (7)

A connection device for electrically connecting a first terminal and a second terminal,
A holding unit for holding a plurality of conductive magnetic particles between the first terminal and the second terminal;
A magnetic field generator that applies a vibrating magnetic field between the first terminal and the second terminal, and polishes at least one of the first terminal and the second terminal with the plurality of magnetic particles;
With
The magnetic field generation unit is a connection device that vibrates the plurality of magnetic particles in a direction orthogonal to a facing direction of the first terminal and the second terminal. The connection device according to claim 1, wherein the magnetic field generation unit aligns the plurality of magnetic particles in a facing direction of the first terminal and the second terminal. The connection device according to claim 1, wherein the magnetic field generation unit applies a vibrating magnetic field including magnetic field reversal in a facing direction of the first terminal and the second terminal. The connection device according to any one of claims 1 to 3, wherein the magnetic field generation unit stops the vibration of the aligned magnetic particles after a predetermined time. When the first terminal and the second terminal are transitioned from an electrically connected state to an unconnected state, the magnetic field generation unit attenuates and vibrates the magnetic field in the opposing direction of the first terminal and the second terminal. The connecting device according to any one of claims 1 to 4. A connection method for electrically connecting a first terminal and a second terminal,
Holding a plurality of conductive magnetic particles between the first terminal and the second terminal;
Applying a vibrating magnetic field between the first terminal and the second terminal, and polishing at least one of the first terminal and the second terminal with the plurality of magnetic particles;
In the polishing, the plurality of magnetic particles are vibrated in a direction orthogonal to a facing direction of the first terminal and the second terminal. A test apparatus for testing a wafer under test,
A test substrate for supplying a test signal to the wafer under test;
A connection device according to any one of claims 1 to 5 for electrically connecting the second terminal provided on the first terminal and the wafer under test provided on the test substrate,
A test apparatus comprising:

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