JP5465516B2 - Probe and probe manufacturing method - Google Patents

Description

The present invention relates to a probe using a carbon nanomaterial and a method for producing the probe .

  Some conventional probe cards use an electroformed needle made of nickel, palladium, cobalt, or an alloy (binary alloy or ternary alloy) containing these as a probe (see Patent Document 1). The probes are arranged at a pitch interval of about 100 μm, and the thickness of the probes is about 60 μm.

JP 2009-216413 A

  The probe is required to reduce the thickness of the probe in accordance with the narrowing of the pitch interval accompanying the high integration of semiconductor devices. For example, when the pitch interval between probes is 60 to 80 μm, the thickness of the probe is 30 to 40 μm. If the thickness of the probe is reduced in accordance with this requirement, the mechanical strength of the probe is reduced, and as a result, when the probe is brought into contact with an electrode of a semiconductor device, needle breakage is likely to occur, or the probe is made semiconductor. Repeated sliding contact with the electrode of the device may cause the probe to easily cause metal fatigue.

  Further, when the thickness dimension of the probe is reduced, the current density flowing through the probe is increased, and the Joule heat easily causes recrystallization of the alloy constituting the probe, and as a result, the probe becomes brittle. This needle burn frequently occurs in the probe used as the ground. Further, when the probe is produced by electroforming, hydrogen gas may be mixed into the probe. When hydrogen gas is mixed into the probe, when the probe is brought into sliding contact with the electrode of the semiconductor device, the hydrogen gas escapes from the crystal grain boundary constituting the probe, and creep displacement occurs in the probe.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a probe having a high withstand current value and a method of manufacturing the probe even under a narrow pitch interval. .

In order to solve the above problems, the probe of the present invention includes a contact portion made of a conductive material and capable of contacting an electrode to be measured, and a probe body. The probe main body includes a catalyst layer provided on an end face of the contact portion and a plurality of carbon nanomaterials that stand in a bundle on the catalyst layer. The carbon nanomaterial extends in a direction away from the contact portion and the catalyst layer.

  In the case of using such a probe, the carbon nanomaterial stands in a bundle on the catalyst layer on the end face of the contact portion. Since this carbon nanomaterial has high mechanical strength and high elasticity (superplasticity), it is possible to reduce the thickness, outer diameter, and other dimensions of the probe in order to arrange the probe at narrow pitch intervals. The mechanical strength as a probe can be sufficiently satisfied. In addition, since the carbon nanomaterial has high electrical conductivity and thermal conductivity, the possibility of needle burn in the probe can be reduced, and a probe having a high current resistance can be obtained. In addition, since a highly elastic carbon nanomaterial is used as a constituent member of the probe, the possibility of creep displacement occurring in the probe can be reduced. Further, even if the height of the tip of the probe varies due to the warp of the probe card substrate on which the probe is disposed, the variation is absorbed by the elastic deformation of the carbon nanomaterial. be able to.

The probe manufacturing method of the present invention is the above-described probe manufacturing method. In this method , a catalyst layer is formed on an end surface of a contact portion formed on a substrate, and a carbon nanomaterial having a predetermined height is grown on the catalyst layer so as to extend in a direction away from the contact portion and the catalyst layer. The substrate is removed after the probe body made of the catalyst layer and the carbon nanomaterial is formed.

It is the schematic of the probe card which concerns on embodiment of this invention, Comprising: (a) is sectional drawing, (b) is a bottom view. It is a schematic perspective view of the probe of the probe card. FIG. 6 is an explanatory view showing a plan view and a cross-sectional view of the probe card of the probe card arranged vertically, wherein (a) shows a process of forming a SiO 2 film on the Si substrate, and (b) shows the Si substrate. The figure which shows the process of apply | coating a resist on SiO2 film and forming an opening in this resist, (c) is the figure which shows the process of etching the part exposed from the said opening of said SiO2 film, (d) is said Si substrate The figure which shows the process of forming a hole in the part exposed from the said opening of FIG., (E) is a figure which shows the process of removing the said resist, (f) forms a resist newly in the said Si substrate, It is a figure which shows the process of forming opening. FIG. 4 is an explanatory view showing a manufacturing process of the probe of the probe card continued from FIG. 3 with a plan view and a cross-sectional view arranged vertically, and (a) shows a hole of the Si substrate and an opening of a resist made of a hard conductive metal. The figure which shows the process of forming a layer, (b) is a figure which shows the process of filling the hard-conductive metal layer with a conductive material, and creating the main part of a contact part, (c) is further on the said resist The figure which shows the process of apply | coating a resist and forming the opening which exposes the main-body part of the said contact part to this resist, The figure which shows the process of forming a catalyst particle layer on the main-body part of the said contact part, (d). (e) is a figure which shows the process of removing the said resist, (f) is a figure which shows the process of forming a carbon nanotube in the said catalyst particle layer. (A) is schematic sectional drawing which shows the process of connecting the carbon nanotube of the said probe to the electrode of a wiring board, (b) is schematic sectional drawing which shows the process of removing the said Si substrate. It is a schematic sectional view showing a process of connecting a wiring board of the probe card to a main board. It is a schematic sectional view showing a use state of the probe card, (a) is a diagram showing a state before the probe contacts the electrode of the semiconductor device, (b) is a probe contacted the electrode of the semiconductor device It is a figure which shows a state. It is the schematic which shows another method of connecting the carbon nanotube of the said probe to the electrode of a wiring board, Comprising: (a) is sectional drawing which shows the process of connecting the carbon nanotube of the said probe to the electrode of a wiring board, (b) FIG. 4 is a cross-sectional view showing a process of removing the Si substrate.

  Hereinafter, a probe card according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. The probe card shown in FIG. 1 includes a main board 100, a wiring board 200, a plurality of spring pins 300 (relay members), and a plurality of probes 400. Hereinafter, the operation of each part of the probe card will be described. For convenience of illustration, in FIG. 1, the number of probes 400 is four, and the sizes of the electrodes 220 and the probes 400 of the wiring board 200 are exaggerated.

  As the main substrate 100, a known printed circuit board is used. A plurality of external electrodes 110 are provided on the outer edge of the upper surface of the main substrate 100, and a plurality of connection electrodes 120 are provided on the lower surface of the main substrate 100. The external electrode 110 and the connection electrode 120 are connected to each other by a conductive line 130 provided inside the main substrate 100. A wiring board 200 is attached to the lower side of the main board 100 with an interval such as screws.

  The wiring board 200 is a plate made of ceramic or the like, and its upper surface (first surface) faces the main board 100 in parallel. A plurality of connection electrodes 210 are provided on the upper surface of the wiring substrate 200, and a plurality of electrodes 220 are provided on the lower surface (second surface) of the wiring substrate 200. The connecting electrode 210 and the electrode 220 are connected to each other by a conductive line 230 provided inside the wiring board 200. The connection electrodes 210 are arranged at the same pitch interval as the connection electrodes 120 of the main substrate 100 and face the connection electrodes 120 of the main substrate 100. The connection electrode 210 and the connection electrode 120 are connected by spring pins 300, respectively.

  Each spring pin 300 is a well-known one having a cylindrical barrel, a pair of contact pins, and a spring. Each of the pair of contact pins has a base end portion slidably accommodated in the barrel, and a distal end portion protruding upward and downward from the barrel. The springs are accommodated in the barrel and urge the base end portions of the pair of contact pins in the protruding direction of the contact pins. Due to the biasing force of the spring, the tip of the upper contact pin elastically contacts the connection electrode 120 of the main substrate 100, and the tip of the lower contact pin elastically contacts the connection electrode 210 of the wiring substrate 200. ing. The connecting electrode 210 and the connecting electrode 120 are electrically connected through the pair of contact pins and the barrel.

  Further, the electrodes 220 of the wiring board 200 are arranged at a pitch interval of several μm to tens of μm. A bundle of carbon nanotubes 430 of the probe 400 is connected to the electrode 220 by an adhesive resin 500. That is, the probes 400 are arranged on the lower surface of the wiring substrate 200 at a pitch interval of several μm to several tens of μm according to the position of the electrode 11 of the semiconductor wafer 10 (see FIG. 7). The adhesive resin 500 is a thermosetting resin or a photocurable resin, and is mixed with metal fine particles having a diameter of about 0.1 to 1.0 μm or metal-plated polymer (plastic, fluorine-based) fine particles. The electrode 220 and the bundle-like carbon nanotube 430 of the probe 400 are electrically connected by the metal fine particles or polymer fine particles in the adhesive resin 500.

As shown in FIGS. 1 and 2, each probe 400 includes a contact portion 410, a catalyst particle layer 420 (probe main body), and a plurality of carbon nanotubes 430 (probe main body) . The contact part 410 has a main body part 411 and an outer shell part 412. The main body 411 is a substantially cylindrical body made of a conductive material such as a nickel alloy, and has a quadrangular pyramid-shaped protrusion on its tip surface. The outer shell portion 412 is made of a conductive metal material (eg, rhodium (Rh) or iridium (Ir)) that is harder than the main body portion 411 that covers the distal end surface (including a pyramidal projection) and the outer peripheral surface of the main body portion 411. It is a layer and has a substantially cylindrical cup shape with a bottom. That is, the front end surface and the outer peripheral surface of the main body portion 411 are coated with the outer shell portion 412. A catalyst particle layer 420 is formed on the flat rear end surface of the main body 411. The catalyst particle layer 420 is composed of a single layer of metal particles (eg, iron (Fe), cobalt (Co), molybdenum (Mo), niobium (Nb), etc.) having a thickness of several tens of nanometers or a combination of the metal fine particles. Layer. In the catalyst particle layer 420, a plurality of hexacyclic network-like carbon nanotubes 430 stand in a bundle. It is preferable that an adhesion enhancement layer is provided at the boundary between the catalyst particle layer 420 and the rear end surface of the main body 411. As this adhesion enhancing layer, for example, Ni in the main body portion 411 and Fe in the catalyst particle layer 420 on the rear end face of the main body portion 411 are heated and diffused, so that the lower layer portion of the catalyst particle layer 420 becomes FeNi. Some have become alloy layers. The thickness of the FeNi alloy layer is controlled to several nm by controlling the heating temperature and the heating time. The adhesion between the main body 411 and the upper layer portion of the catalyst particle layer 420 is enhanced by the FeNi alloy layer. Fe particles remain in the upper layer portion of the catalyst particle layer 420 so that the original function of the catalyst particle layer 420 can be exhibited. The adhesion enhancing layer is not limited to the FeNi alloy layer, and any combination is possible as long as the material of the main body 411 and the material of the catalyst particle layer 420 are easily alloyed by heat diffusion. It may be used. Even when the material of the main body 411 and the material of the catalyst particle layer 420 are difficult to be alloyed by heat diffusion, the catalyst particle layer 420 is formed on the rear end surface of the main body 411 by a metal ion implantation method or the like. An adhesion enhancing layer can be formed by implanting a metal that is easily alloyed with the material.

As the carbon nanotube 430, any of a single-walled nanotube, a double-walled nanotube, and a multi-walled nanotube can be used. In this embodiment, a multi-walled nanotube is used. The carbon nanotube 430 has a diameter of several nanometers to several hundred nanometers and a height dimension of 0.5 to 2 mm, and extends in a direction perpendicular to the rear end surface of the main body 411. The diameter of the bundle of carbon nanotubes 430 is several μm to 30 μm. The density of the carbon nanotubes 430 is 10,000 to 30,000 / μm 2. The carbon nanotubes 430 have a mechanical strength and high elasticity (superplasticity) that are 10 to several tens of times the mechanical strength (1500 to 2000 MPa) of steel. For this reason, when a load is applied to the contact portion 410, the carbon nanotubes 430 are elastically deformed while buckling in a direction perpendicular to the rear end surface of the main body portion 411 of the contact portion 410 (see FIG. 7B). In other words, the carbon nanotubes 430 are deformed while having a wavy structure on the compression side, and therefore have characteristics that are extremely difficult to break. In addition, the carbon nanotube 430 has a high thermal conductivity (approximately 6000 W / mk) and an electrical conductivity (a current of 10 ⁹ A / cm ² can flow). As very suitable.

  Hereinafter, the manufacturing process of the probe 400 described above will be described with reference to FIGS. 3 and 4, for convenience of illustration, a process of manufacturing the two probes 400 is illustrated. First, as shown in FIG. 3A, a Si substrate 600 having a silicon oxide film (SiO 2 film) 610 formed on a surface is prepared. The crystal plane of the Si substrate 600 has a {100} orientation. Thereafter, as shown in FIG. 3B, a resist R1 (third resist) is applied on the silicon oxide film 610 of the Si substrate 600, and this resist R1 is exposed and developed using a mask, and the resist R1 A rectangular opening R11 (third opening) is formed. Thereafter, as shown in FIG. 3C, the portion exposed from the opening R11 of the silicon oxide film 610 is subjected to isotropic etching to be removed. Thereafter, as shown in FIG. 3D, anisotropic etching is performed on a portion exposed from the opening R11 of the Si substrate 600 to form a quadrangular pyramid hole 620. Thereafter, as shown in FIG. 3E, the resist R1 is removed from the surface of the Si substrate 600. Thereafter, as shown in FIG. 3F, a resist R2 (first resist) is applied on the surface of the Si substrate 600, and exposure / development is performed on the resist R2 using a mask. A circular opening R21 (first opening) that exposes 620 and its peripheral edge is formed.

  Thereafter, as shown in FIG. 4A, the hole portion 620 of the Si substrate 600, the peripheral portion of the Si substrate 600, and the inner surface of the opening R21 of the resist R2 are harder than the main body portion 411 of the probe 400 by sputtering. A layer of conductive metal material (ie, outer shell portion 412 of probe 400) is formed. Thereafter, as shown in FIG. 4B, the outer shell portion 412 is filled with a conductive material such as a nickel alloy by electrolytic plating to form a main body portion 411. Thereafter, the illustrated upper surfaces of the resist R2, the main body 411, and the outer shell 412 are polished and flattened. Thereafter, as shown in FIG. 4C, a resist R3 (second resist) is applied on the resist R2, the main body 411, and the outer shell 412, and this resist R3 is exposed and developed using a mask. A circular opening R31 (second opening) is formed in the resist R3 to expose the upper surface of the main body 411 in the drawing (that is, the rear end surface of the main body 411). Thereafter, as shown in FIG. 4D, the catalyst particle layer 420 is uniformly formed on the rear end surface of the main body 411 using the following well-known forming method. As the formation method, there is a method in which the catalyst particle layer 420 is formed by accumulating metal catalyst particles on the rear end surface of the main body 411 by PVD or sputtering. In this case, it is preferable that the catalyst particle layer 420 is not connected between the metal catalyst particles, and is in a state before the film made of the metal catalyst particles is formed. As another forming method, a solution mixed with a metal compound such as iron oxide (Fe203) (for example, protein ferritin) is dropped on the rear end surface of the main body portion 411, and then subjected to heat treatment to perform the rear end surface of the main body portion 411. There is a method in which the catalyst particle layer 420 is left. After the catalyst particle layer 420 is thus formed on the rear end surface of the main body 411, the resists R2 and R3 are removed from the surface of the Si substrate 600 as shown in FIG.

  Then, as shown in FIG.4 (f), Si substrate 600, the main-body part 411, the outer shell part 412, and the catalyst particle layer 420 are installed in the stand in a CVD vacuum apparatus. Then, the carbon nanotubes 430 are grown on the catalyst particle layer 420 using a chemical vapor deposition (CVD) method. Specifically, the CVD vacuum apparatus is set to a vacuum state (10 to 0.001 Pa). After that, carbon gas containing moisture (methane, alcohol, ethylene, acetylene, etc.) and inert atmosphere gas (helium, argon, etc.) are circulated in the CVD vacuum apparatus by the gas supply means, and placed near the CVD vacuum apparatus. The Si substrate 600, the main body portion 411, the outer shell portion 412 and the catalyst particle layer 420 are heated at about 500 to 1300 ° C. for about 10 minutes by the heated heater. Then, the carbon gas is thermally decomposed into carbon and hydrogen. This carbon is reconstructed by the action of the catalyst particle layer 420 and becomes the carbon nanotube 430. In this way, the carbon nanotubes 430 grow on the catalyst particle layer 420 at a rate of about 10 Sec to 60 Sec in the direction perpendicular to the rear end surface of the main body portion 411. At this time, in order to ensure the uniformity of the carbon nanotubes 430, it is preferable to rotate the Si substrate 600, the main body portion 411, the outer shell portion 412 and the catalyst particle layer 420 in the circumferential direction. The flow rate of the carbon gas is 10 to 50 Sccm, the flow rate of the inert atmosphere gas is 10 to 50 Sccm, and the flow rate ratio of the carbon gas to the inert atmosphere gas is 1: 1 to 1: 5. The inert atmosphere gas is introduced to maintain the high purity of the grown carbon nanotubes 430.

  Thereafter, as illustrated in FIG. 5A, an adhesive resin 500 is applied to the lower surface of the wiring substrate 200 so as to cover all the electrodes 220. Thereafter, the Si substrate 600 and the wiring substrate 200 are brought relatively close to each other, and the carbon nanotubes 430 of the probe 400 are brought into contact with the electrodes 220 of the wiring substrate 200 at a time. Thereafter, the adhesive resin 500 is cured by heating or irradiating light such as ultraviolet rays, and the carbon nanotubes 430 of the probe 400 are respectively connected to the electrodes 220 of the wiring board 200. Thereafter, as shown in FIG. 5B, the Si substrate 600 is removed by isotropic etching.

  The wiring board 200 having the probe 400 disposed on the lower surface in this way is attached to the main board 100 by attaching means such as screws as shown in FIG. At this time, the spring pins 300 are respectively interposed between the connection electrodes 210 of the wiring board 200 and the connection electrodes 120 of the main board 100 to electrically connect them.

  The probe card described above is attached to a prober of a tester and used to measure electrical characteristics of a semiconductor wafer. Hereinafter, the operation of the probe of the probe card in the measurement process will be described with reference to FIG. First, as shown in FIG. 7A, the probe card is attached to the prober and is disposed to face the semiconductor wafer 10. Thereafter, the prober is operated to bring the probe card and the semiconductor wafer 10 relatively close to each other. Then, the contact portion 410 of the probe 400 of the probe card contacts the electrode 11 of the semiconductor wafer 10. Thereafter, as shown in FIG. 7B, when the probe card and the semiconductor wafer 10 are brought closer to each other, the contact portions 410 of the probe 400 of the probe card are brought into pressure contact with the electrodes 11 of the semiconductor wafer 10, respectively. The carbon nanotubes 430 of the probe 400 are elastically deformed while buckling in the direction perpendicular to the rear end surface of the main body 411 of the contact portion 410 (that is, deformed while taking a wavy structure on the compression side). In this state, various electrical characteristics of the semiconductor wafer 10 are measured by the tester. At this time, the amount of overdrive (the distance that brings the probe card and the semiconductor wafer 10 closer together from the state in which the contact portion 410 of the probe 400 is in contact with the electrode 11 of the semiconductor wafer 10) is about 100 μm, and carbon The buckling amount of the nanotube 430 is 5 to 10%.

  In the case of the probe card as described above, the probe 400 has a configuration in which the carbon nanotubes 430 are forested in the catalyst particle layer 420 on the rear end surface of the main body 411 of the contact portion 410. Since the carbon nanotubes 430 have high mechanical strength and high elasticity (superplasticity), in order to arrange the probes 400 at a narrow pitch interval of several μm to several tens of μm, the diameter of the bundle of the carbon nanotubes 430 is Even if it is as small as several μm to 30 μm, the mechanical strength as the probe 400 can be sufficiently satisfied. In addition, since the carbon nanotubes 430 have high electrical conductivity and thermal conductivity, the possibility of needle burn in the probe 400 can be reduced, and a probe with a high current resistance can be obtained. Furthermore, since the highly elastic carbon nanotube 430 is used as a constituent member of the probe 400, the possibility of creep displacement occurring in the probe 400 can be reduced. Even if the height of the tip of the probe 400 varies due to warping of the wiring substrate 200 or the main substrate 100, the variation can be absorbed by elastic deformation of the carbon nanotubes 430.

  The probe of the probe card can be arbitrarily changed in design within the scope of the claims. Details will be described below.

  In the above embodiment, the contact portion 410 of the probe 400 is configured to include the main body portion 411 and the outer shell portion 412, but is not limited thereto. For example, when the main body 411 itself is made of a conductive metal material having the same hardness as the outer shell 412, the outer shell 412 can be omitted. In the above embodiment, the outer shell portion 412 covers the distal end surface and the outer peripheral surface of the main body portion 411. However, it is sufficient that the outer shell portion 412 covers at least the distal end surface of the main body portion 411. The shape of the contact portion of the probe described above can be arbitrarily changed as long as it can contact the electrode to be measured such as the semiconductor wafer 10.

  The height dimension, diameter, density, and the like of the carbon nanotube 430 in the above embodiment are just examples, and are not limited thereto. By changing the diameter and density of the metal particles of the catalyst particle layer 420, the height dimension, diameter, density, and the like of the carbon nanotubes 430 can be appropriately changed. Similarly, the diameter of the bundle of carbon nanotubes 430 is not limited to the above embodiment, and can be changed as appropriate. By adjusting the height dimension, diameter, density, etc. of the carbon nanotubes 430 in this way, the load on the electrodes when the probe contacts the electrode to be measured such as the semiconductor wafer 10 can be adjusted. For example, when an oxide film is stuck on the electrode surface, it is necessary to increase the load on the probe electrode in order to break through the oxide film. In this case, by increasing the density of the carbon nanotubes 430, it is possible to satisfy a high load requirement for the probe for breaking through the oxide film. Moreover, when it is necessary to reduce the damage of the electrode when the probe contacts the electrode to be measured, it is necessary to reduce the load on the electrode of the probe. In this case, by reducing the density of the carbon nanotubes 430, it is possible to satisfy a low load requirement for the probe.

  In the above embodiment, the carbon nanotube 430 is used as the carbon nanomaterial, but other carbon nanomaterials such as carbon nanohorn, carbon nanofiber, and graphite nanofiber can be used. In the above embodiment, the carbon nanotube 430 is obtained by using the CVD manufacturing method. However, the carbon nanotube 430 can also be obtained by a plasma CVD method, a wet electrophoresis method, or the like. . When the plasma CVD method is used, the carbon nanotubes 430 can be grown at a low temperature (600 ° C.), and the growth direction of the carbon nanotubes 430 can be easily aligned by an electric field or plasma applied from the outside.

  In the above embodiment, the catalyst particle layer 420 is formed on the entire rear end surface of the main body 411 of the contact portion 410, but the present invention is not limited to this. For example, a catalyst particle layer may be provided on a part of the rear end surface of the main body of the contact portion 410, or a plurality of types of catalyst particle layers having different diameters and densities of metal particles may be provided on the rear end surface of the contact portion. (That is, the catalyst particle layer may be divided into a plurality of types of regions). In the latter case, a plurality of types of carbon nanotubes having different diameters, densities, and the like can be planted in each catalyst particle layer (each region). For example, a circular first catalyst particle layer is formed at the center of the rear end surface of the contact portion, and a ring-shaped first catalyst layer that is a layer of metal particles different from the first catalyst particle layer at the peripheral portion of the center portion of the rear end surface. Two catalyst particle layers can be formed. In this case, the first and second groups of carbon nanotubes having different diameters and densities can be made to stand in the first and second catalyst particle layers.

  In the above embodiment, the hole 620 is provided in the Si substrate 600. However, depending on the shape of the contact portion of the probe, the step of providing the hole 620 can be omitted. That is, the manufacturing process of the probe 400 may be started from the point of applying the resist R2 on the Si substrate 600 without applying the resist R1 on the Si substrate 600. In the case where the contact portion 410 does not have the outer shell portion 412, the main body portion 411 is preferably formed by filling the opening R21 of the resist R2 with a conductive material. In the above embodiment, the resists R2 and R3 are removed from the surface of the Si substrate 600 before the carbon nanotubes 430 are grown. However, the resists R2 and R3 together with the Si substrate 600 are grown after the carbon nanotubes 430 are grown. It is also possible to remove. Further, although the probe 400 is bonded to the electrode 220 of the wiring board 200 with the adhesive resin 500, the present invention is not limited to this. For example, as shown in FIG. 8, the conductive paste 700 may be applied to the electrodes 220 of the wiring board 200, and the carbon nanotubes 430 of the probes 400 may be connected to the electrodes 220 of the wiring board 200. Further, after removing the Si substrate 600, the carbon nanotubes 430 of the probe 400 can be connected to the electrodes 220 of the wiring substrate 200 one by one with the adhesive resin 500 or the conductive paste 700. Note that the Si substrate 600 can be replaced by a plate having a flat surface.

  In the above embodiment, the main board 100 and the wiring board 200 are electrically connected by the spring pins 300. However, the main board 100 is connected by other known conductive relay members such as IC pins. And the wiring board 200 can be electrically connected.

  In the above embodiment, the materials, shapes, dimensions, arrangements, and the like constituting each part of the probe card have been described as examples, and the design can be arbitrarily changed as long as the same function can be realized. Is possible. In the above embodiment, the probe card according to the present invention has been described as being used for batch measurement of the semiconductor wafer 10, but the electrical characteristics of a chip diced from the semiconductor wafer are measured. Of course, a probe card is also possible.

DESCRIPTION OF SYMBOLS 100 ... Main board 200 ... Wiring board 300 ... Spring pin (relay member)
400 ... probe 410 ... contact portion 411 main body 412 outer shell 420 catalyst particle layer 430 carbon nanotube 500 adhesive resin 600 silicon substrate 620 hole R1 ..Resist (third resist)
R11 ... Opening (third opening)
R2 ... Resist (first resist)
R21 ... Open (first opening)
R3... Resist (second resist)
R31 ... Opening (second opening)
700 ... conductive paste

Claims (2)

A contact portion made of a conductive material and capable of contacting the electrode to be measured ;
With a probe body,
The probe body includes a catalyst layer provided on an end surface of the contact portion;
It consists of a plurality of carbon nanomaterials that stand in bundles on the catalyst layer,
The carbon nanomaterial extends in a direction away from the contact portion and the catalyst layer. In the manufacturing method of the probe of Claim 1,
The catalyst layer is formed on the end face of the contact portion formed on the substrate,
After growing a carbon nanomaterial of a predetermined height on the catalyst layer so as to extend in a direction away from the contact portion and the catalyst layer, and creating a probe body made of the catalyst layer and the carbon nanomaterial,
A method for manufacturing a probe, comprising removing the substrate.

Images