JP5458683B2 - レーザー散乱法を用いた半導体ウェーハの良品判定方法 - Google Patents

レーザー散乱法を用いた半導体ウェーハの良品判定方法 Download PDF

Info

Publication number
JP5458683B2
JP5458683B2 JP2009137105A JP2009137105A JP5458683B2 JP 5458683 B2 JP5458683 B2 JP 5458683B2 JP 2009137105 A JP2009137105 A JP 2009137105A JP 2009137105 A JP2009137105 A JP 2009137105A JP 5458683 B2 JP5458683 B2 JP 5458683B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
value
lpd
haze
defective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009137105A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010283264A5 (enExample
JP2010283264A (ja
Inventor
栄治 神山
孝 中山
健夫 加藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Priority to JP2009137105A priority Critical patent/JP5458683B2/ja
Priority to US12/792,148 priority patent/US8379196B2/en
Priority to EP17197729.1A priority patent/EP3290910B1/en
Priority to EP10164908.5A priority patent/EP2261644B1/en
Publication of JP2010283264A publication Critical patent/JP2010283264A/ja
Publication of JP2010283264A5 publication Critical patent/JP2010283264A5/ja
Application granted granted Critical
Publication of JP5458683B2 publication Critical patent/JP5458683B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8803—Visual inspection

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
JP2009137105A 2009-06-08 2009-06-08 レーザー散乱法を用いた半導体ウェーハの良品判定方法 Active JP5458683B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009137105A JP5458683B2 (ja) 2009-06-08 2009-06-08 レーザー散乱法を用いた半導体ウェーハの良品判定方法
US12/792,148 US8379196B2 (en) 2009-06-08 2010-06-02 Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method
EP17197729.1A EP3290910B1 (en) 2009-06-08 2010-06-04 Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method
EP10164908.5A EP2261644B1 (en) 2009-06-08 2010-06-04 Method for judging whether a semiconductor wafer is a non-defective wafer by using a laser scattering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009137105A JP5458683B2 (ja) 2009-06-08 2009-06-08 レーザー散乱法を用いた半導体ウェーハの良品判定方法

Publications (3)

Publication Number Publication Date
JP2010283264A JP2010283264A (ja) 2010-12-16
JP2010283264A5 JP2010283264A5 (enExample) 2012-03-08
JP5458683B2 true JP5458683B2 (ja) 2014-04-02

Family

ID=42289673

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009137105A Active JP5458683B2 (ja) 2009-06-08 2009-06-08 レーザー散乱法を用いた半導体ウェーハの良品判定方法

Country Status (3)

Country Link
US (1) US8379196B2 (enExample)
EP (2) EP3290910B1 (enExample)
JP (1) JP5458683B2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5463943B2 (ja) * 2010-02-08 2014-04-09 株式会社Ｓｕｍｃｏ 画像データ処理方法および画像作成方法
KR101214806B1 (ko) 2010-05-11 2012-12-24 가부시키가이샤 사무코 웨이퍼 결함 검사 장치 및 웨이퍼 결함 검사 방법
US9098894B2 (en) * 2013-02-01 2015-08-04 Taiwan Semiconductor Manufacturing Company, Ltd. Defect determination in integrated circuit manufacturing process
DE112014002133B4 (de) * 2013-04-24 2017-06-22 Sumco Techxiv Corporation Herstellungsverfahren für einen Einkristall, Silicium-Einkristall, Verfahren zur Herstellung eines Siliciumwafers, Herstellungsverfahren für einen Silicium-Epitaxialwafer, sowie Silicium-Epitaxialwafer

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63140904A (ja) 1986-12-04 1988-06-13 Toshiba Corp 散乱光測定装置
WO2004105087A2 (en) * 2003-05-19 2004-12-02 Kla-Tencor Technologies Corporation Apparatus and methods for enabling robust separation between signals of interest and noise
US7557910B2 (en) * 2004-12-19 2009-07-07 Kla-Tencor Corporation System and method for controlling a beam source in a workpiece surface inspection system
US7528944B2 (en) * 2006-05-22 2009-05-05 Kla-Tencor Technologies Corporation Methods and systems for detecting pinholes in a film formed on a wafer or for monitoring a thermal process tool
US8269960B2 (en) * 2008-07-24 2012-09-18 Kla-Tencor Corp. Computer-implemented methods for inspecting and/or classifying a wafer

Also Published As

Publication number Publication date
EP3290910A1 (en) 2018-03-07
EP3290910B1 (en) 2020-11-04
JP2010283264A (ja) 2010-12-16
EP2261644A1 (en) 2010-12-15
US20100309461A1 (en) 2010-12-09
EP2261644B1 (en) 2019-02-20
US8379196B2 (en) 2013-02-19

Similar Documents

Publication Publication Date Title
US7616299B2 (en) Surface inspection method and surface inspection apparatus
CN107615469B (zh) 半导体晶圆的评价方法
KR100551570B1 (ko) 반도체 웨이퍼표면의 검사방법
JP5458683B2 (ja) レーザー散乱法を用いた半導体ウェーハの良品判定方法
JP2001503148A (ja) ウェハ表面上のピットと粒子を区別するための表面検査システム及び方法
CN103575688A (zh) 检查用于太阳能电池的硅衬底的方法
JP2010283264A5 (enExample)
JPWO2001027600A1 (ja) 半導体ウェーハ表面の検査方法
US6724474B1 (en) Wafer surface inspection method
WO2010113232A1 (ja) 検査方法及び検査装置
JP5585438B2 (ja) ウェーハの欠陥検出方法
US20140071442A1 (en) Optical surface defect inspection apparatus and optical surface defect inspection method
JP5565237B2 (ja) ウェーハの欠陥検出方法
JP5222635B2 (ja) 被検査物の検査装置及び検査方法
JP2006064496A (ja) 磁気ディスク基板の表面粗さ測定方法および測定装置並びに磁気ディスクの製造方法
JP5417793B2 (ja) 表面検査方法
JP2024140298A (ja) 欠陥領域の判定方法
JP5427808B2 (ja) 検査装置
JP3129278B2 (ja) 化学処理表面状態検査装置および化学処理液劣化状態検査方法
KR101759878B1 (ko) 실리콘 웨이퍼의 평가 방법
JP3627562B2 (ja) シリコンウェーハ表面の微量有機物の評価方法
WO2025154521A1 (ja) シリコン単結晶基板の欠陥領域の判定方法
KR100729034B1 (ko) 웨이퍼 표면의 거시 결함 검사장치
CN112665536A (zh) 一种晶圆的边缘粗糙度的测量方法及装置
JP2011232267A (ja) 半導体ウェーハの表面検査方法および表面検査装置、ならびに半導体ウェーハの製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120123

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120123

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130926

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20131008

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131128

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131217

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131230

R150 Certificate of patent or registration of utility model

Ref document number: 5458683

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250