JP2010283264A5 - - Google Patents
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- Publication number
- JP2010283264A5 JP2010283264A5 JP2009137105A JP2009137105A JP2010283264A5 JP 2010283264 A5 JP2010283264 A5 JP 2010283264A5 JP 2009137105 A JP2009137105 A JP 2009137105A JP 2009137105 A JP2009137105 A JP 2009137105A JP 2010283264 A5 JP2010283264 A5 JP 2010283264A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- value
- haze
- lpds
- inspection apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 235000012431 wafers Nutrition 0.000 claims description 161
- 238000007689 inspection Methods 0.000 claims description 87
- 230000002950 deficient Effects 0.000 claims description 57
- 239000004065 semiconductor Substances 0.000 claims description 47
- 238000000790 scattering method Methods 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 24
- 238000001514 detection method Methods 0.000 claims description 16
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 10
- 239000002245 particle Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000001953 sensory effect Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004816 latex Substances 0.000 description 1
- 229920000126 latex Polymers 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009137105A JP5458683B2 (ja) | 2009-06-08 | 2009-06-08 | レーザー散乱法を用いた半導体ウェーハの良品判定方法 |
| US12/792,148 US8379196B2 (en) | 2009-06-08 | 2010-06-02 | Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method |
| EP17197729.1A EP3290910B1 (en) | 2009-06-08 | 2010-06-04 | Method for judging whether semiconductor wafer is non-defective wafer by using laser scattering method |
| EP10164908.5A EP2261644B1 (en) | 2009-06-08 | 2010-06-04 | Method for judging whether a semiconductor wafer is a non-defective wafer by using a laser scattering method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009137105A JP5458683B2 (ja) | 2009-06-08 | 2009-06-08 | レーザー散乱法を用いた半導体ウェーハの良品判定方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010283264A JP2010283264A (ja) | 2010-12-16 |
| JP2010283264A5 true JP2010283264A5 (enExample) | 2012-03-08 |
| JP5458683B2 JP5458683B2 (ja) | 2014-04-02 |
Family
ID=42289673
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009137105A Active JP5458683B2 (ja) | 2009-06-08 | 2009-06-08 | レーザー散乱法を用いた半導体ウェーハの良品判定方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8379196B2 (enExample) |
| EP (2) | EP3290910B1 (enExample) |
| JP (1) | JP5458683B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5463943B2 (ja) * | 2010-02-08 | 2014-04-09 | 株式会社Ｓｕｍｃｏ | 画像データ処理方法および画像作成方法 |
| KR101214806B1 (ko) | 2010-05-11 | 2012-12-24 | 가부시키가이샤 사무코 | 웨이퍼 결함 검사 장치 및 웨이퍼 결함 검사 방법 |
| US9098894B2 (en) * | 2013-02-01 | 2015-08-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect determination in integrated circuit manufacturing process |
| DE112014002133B4 (de) * | 2013-04-24 | 2017-06-22 | Sumco Techxiv Corporation | Herstellungsverfahren für einen Einkristall, Silicium-Einkristall, Verfahren zur Herstellung eines Siliciumwafers, Herstellungsverfahren für einen Silicium-Epitaxialwafer, sowie Silicium-Epitaxialwafer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63140904A (ja) | 1986-12-04 | 1988-06-13 | Toshiba Corp | 散乱光測定装置 |
| WO2004105087A2 (en) * | 2003-05-19 | 2004-12-02 | Kla-Tencor Technologies Corporation | Apparatus and methods for enabling robust separation between signals of interest and noise |
| US7557910B2 (en) * | 2004-12-19 | 2009-07-07 | Kla-Tencor Corporation | System and method for controlling a beam source in a workpiece surface inspection system |
| US7528944B2 (en) * | 2006-05-22 | 2009-05-05 | Kla-Tencor Technologies Corporation | Methods and systems for detecting pinholes in a film formed on a wafer or for monitoring a thermal process tool |
| US8269960B2 (en) * | 2008-07-24 | 2012-09-18 | Kla-Tencor Corp. | Computer-implemented methods for inspecting and/or classifying a wafer |
-
2009
- 2009-06-08 JP JP2009137105A patent/JP5458683B2/ja active Active
-
2010
- 2010-06-02 US US12/792,148 patent/US8379196B2/en active Active
- 2010-06-04 EP EP17197729.1A patent/EP3290910B1/en active Active
- 2010-06-04 EP EP10164908.5A patent/EP2261644B1/en active Active
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