JP5448315B2 - 結晶性半導体膜の作製方法 - Google Patents

結晶性半導体膜の作製方法 Download PDF

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Publication number
JP5448315B2
JP5448315B2 JP2007224006A JP2007224006A JP5448315B2 JP 5448315 B2 JP5448315 B2 JP 5448315B2 JP 2007224006 A JP2007224006 A JP 2007224006A JP 2007224006 A JP2007224006 A JP 2007224006A JP 5448315 B2 JP5448315 B2 JP 5448315B2
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film
semiconductor film
laser beam
laser
light
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Japanese (ja)
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JP2008085318A (ja
JP2008085318A5 (enExample
Inventor
智昭 森若
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of JP2008085318A5 publication Critical patent/JP2008085318A5/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2007224006A 2006-08-31 2007-08-30 結晶性半導体膜の作製方法 Expired - Fee Related JP5448315B2 (ja)

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JP2007224006A JP5448315B2 (ja) 2006-08-31 2007-08-30 結晶性半導体膜の作製方法

Applications Claiming Priority (3)

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JP2006236018 2006-08-31
JP2006236018 2006-08-31
JP2007224006A JP5448315B2 (ja) 2006-08-31 2007-08-30 結晶性半導体膜の作製方法

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JP2008085318A JP2008085318A (ja) 2008-04-10
JP2008085318A5 JP2008085318A5 (enExample) 2010-10-07
JP5448315B2 true JP5448315B2 (ja) 2014-03-19

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2011161715A1 (ja) 2010-06-21 2013-08-19 パナソニック株式会社 薄膜トランジスタアレイ装置、有機ｅｌ表示装置、及び、薄膜トランジスタアレイ装置の製造方法
DE102016111998B4 (de) * 2016-06-30 2024-01-18 Infineon Technologies Ag Ausbilden von Elektrodengräben unter Verwendung eines gerichteten Ionenstrahls und Halbleitervorrichtung mit Graben-Elektrodenstrukturen
WO2018101154A1 (ja) * 2016-11-30 2018-06-07 株式会社ブイ・テクノロジー レーザ照射装置および薄膜トランジスタの製造方法
KR102470876B1 (ko) * 2021-01-28 2022-11-25 재단법인대구경북과학기술원 모놀리식 3차원 소자의 상부층 고결정화 방법 및 이를 통해 제조된 모놀리식 3차원 소자
CN115132754B (zh) * 2022-06-30 2023-06-27 惠科股份有限公司 背光模组及其制备方法、显示面板
WO2026094532A1 (ja) * 2024-10-31 2026-05-07 住友重機械工業株式会社 レーザ処理装置、レーザ処理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5797619A (en) * 1980-12-09 1982-06-17 Matsushita Electronics Corp Formation of semiconductor element
JPS6018913A (ja) * 1983-07-12 1985-01-31 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6159820A (ja) * 1984-08-31 1986-03-27 Fujitsu Ltd 半導体装置の製造方法
JPS62160712A (ja) * 1986-01-09 1987-07-16 Agency Of Ind Science & Technol 半導体装置の製造方法
JPH03286520A (ja) * 1990-04-02 1991-12-17 Seiko Epson Corp 結晶性半導体薄膜の製造方法
JP2002093702A (ja) * 2000-09-14 2002-03-29 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4566504B2 (ja) * 2001-08-17 2010-10-20 株式会社半導体エネルギー研究所 レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
JP5352040B2 (ja) * 2004-08-23 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法

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