JP5448232B2 - 物体を前処理及びコーテイングするための装置及び方法 - Google Patents

物体を前処理及びコーテイングするための装置及び方法 Download PDF

Info

Publication number
JP5448232B2
JP5448232B2 JP2011505437A JP2011505437A JP5448232B2 JP 5448232 B2 JP5448232 B2 JP 5448232B2 JP 2011505437 A JP2011505437 A JP 2011505437A JP 2011505437 A JP2011505437 A JP 2011505437A JP 5448232 B2 JP5448232 B2 JP 5448232B2
Authority
JP
Japan
Prior art keywords
magnetron
electrode
hpppms
coating
hppms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2011505437A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011518950A (ja
JP2011518950A5 (enExample
Inventor
クレマー・ライナー
ワルタ マヤ
Original Assignee
コムコン・アーゲー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コムコン・アーゲー filed Critical コムコン・アーゲー
Publication of JP2011518950A publication Critical patent/JP2011518950A/ja
Publication of JP2011518950A5 publication Critical patent/JP2011518950A5/ja
Application granted granted Critical
Publication of JP5448232B2 publication Critical patent/JP5448232B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3485—Sputtering using pulsed power to the target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3473—Composition uniformity or desired gradient

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Cutting Tools, Boring Holders, And Turrets (AREA)
JP2011505437A 2008-04-28 2009-04-28 物体を前処理及びコーテイングするための装置及び方法 Active JP5448232B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102008021128.1 2008-04-28
DE102008021128 2008-04-28
PCT/EP2009/003082 WO2009132822A2 (de) 2008-04-28 2009-04-28 Vorrichtung und verfahren zum vorbehandeln und beschichten von körpern

Publications (3)

Publication Number Publication Date
JP2011518950A JP2011518950A (ja) 2011-06-30
JP2011518950A5 JP2011518950A5 (enExample) 2012-06-07
JP5448232B2 true JP5448232B2 (ja) 2014-03-19

Family

ID=40885977

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011505437A Active JP5448232B2 (ja) 2008-04-28 2009-04-28 物体を前処理及びコーテイングするための装置及び方法

Country Status (6)

Country Link
US (1) US9812299B2 (enExample)
EP (1) EP2272080B1 (enExample)
JP (1) JP5448232B2 (enExample)
CN (1) CN102027564B (enExample)
DE (1) DE202009018428U1 (enExample)
WO (1) WO2009132822A2 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008050499B4 (de) 2008-10-07 2014-02-06 Systec System- Und Anlagentechnik Gmbh & Co. Kg PVD-Beschichtungsverfahren, Vorrichtung zur Durchführung des Verfahrens und nach dem Verfahren beschichtete Substrate
DE202010001497U1 (de) * 2010-01-29 2010-04-22 Hauzer Techno-Coating B.V. Beschichtungsvorrichtung mit einer HIPIMS-Leistungsquelle
JP5765627B2 (ja) * 2010-09-27 2015-08-19 日立金属株式会社 耐久性に優れる被覆工具およびその製造方法
DE102011117177A1 (de) 2011-10-28 2013-05-02 Oerlikon Trading Ag, Trübbach Verfahren zur Bereitstellung sequenzieller Leistungspulse
HUE025643T2 (en) * 2011-04-20 2016-04-28 Oerlikon Surface Solutions Ag Truebbach Procedure for securing successive power pulses
BRPI1102335A2 (pt) 2011-05-27 2013-06-25 Mahle Metal Leve Sa elemento dotado de pelo menos uma superfÍcie de deslizamento com um revestimento para uso em um motor de combustço interna ou em um compressor
EP2761050B1 (en) * 2011-09-30 2021-08-25 CemeCon AG Coating of substrates using hipims
DE102011117994A1 (de) * 2011-11-09 2013-05-16 Oerlikon Trading Ag, Trübbach HIPIMS-Schichten
JP5344204B2 (ja) * 2012-03-05 2013-11-20 三菱マテリアル株式会社 表面被覆切削工具
US9264150B2 (en) * 2012-03-28 2016-02-16 Globalfoundries Inc. Reactive metal optical security device and methods of fabrication and use
DE102012013577A1 (de) * 2012-07-10 2014-01-16 Oerlikon Trading Ag, Trübbach Hochleistungsimpulsbeschichtungsmethode
US9126273B2 (en) 2012-12-17 2015-09-08 Kennametal Inc Tool for the cutting machining of workpieces and process for coating substrate bodies
EP2784799B1 (en) * 2013-03-28 2022-12-21 CemeCon AG Dense, hard coatings on substrates using HIPIMS
DE102013106351A1 (de) * 2013-06-18 2014-12-18 Innovative Ion Coatings Ltd. Verfahren zur Vorbehandlung einer zu beschichtenden Oberfläche
US9677168B2 (en) 2013-10-08 2017-06-13 TPK America, LLC Touch panel and method for manufacturing the same
US20150354054A1 (en) * 2014-06-06 2015-12-10 Applied Materials, Inc. Cooled process tool adapter for use in substrate processing chambers
FR3025929B1 (fr) * 2014-09-17 2016-10-21 Commissariat Energie Atomique Gaines de combustible nucleaire, procedes de fabrication et utilisation contre l'oxydation.
DE102014115492A1 (de) 2014-10-24 2016-04-28 Cemecon Ag Verfahren und Vorrichtung zur Erzeugung einer elektronischen Entladung
US9812305B2 (en) * 2015-04-27 2017-11-07 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
US11049702B2 (en) 2015-04-27 2021-06-29 Advanced Energy Industries, Inc. Rate enhanced pulsed DC sputtering system
KR102369132B1 (ko) * 2015-11-10 2022-02-28 산드빅 인터렉츄얼 프로퍼티 에이비 코팅용 표면을 전처리하는 방법
BR112018009585B1 (pt) 2015-11-12 2022-12-27 Oerlikon Surface Solutions Ag, Pfãffikon Arranjo de pulverização e método de pulverização para distribuição otimizada do fluxo de energia
US10612132B2 (en) 2015-11-27 2020-04-07 Cemecon Ag Coating a body with a diamond layer and a hard material layer
US20180108519A1 (en) * 2016-10-17 2018-04-19 Applied Materials, Inc. POWER DELIVERY FOR HIGH POWER IMPULSE MAGNETRON SPUTTERING (HiPIMS)
KR101885123B1 (ko) * 2017-03-31 2018-08-03 한국알박(주) 마그네트론 스퍼터링 장치의 자석 제어 시스템
CN109112496B (zh) * 2018-09-26 2020-11-24 武汉华星光电半导体显示技术有限公司 磁控溅射设备及去除基板上氧化层的方法
DE102019124616A1 (de) 2019-09-12 2021-03-18 Cemecon Ag Mehrlagige Beschichtung
WO2021215953A1 (ru) * 2020-04-20 2021-10-28 Акционерное Общество "Твэл" Способ ионно-плазменного нанесения коррозионностойких пленочных покрытий на изделия из циркониевых сплавов
CN112708854A (zh) * 2020-12-19 2021-04-27 合肥开泰机电科技有限公司 一种用于大面积钎焊的真空镀膜结构
WO2023099757A1 (en) * 2021-12-03 2023-06-08 Université De Namur A process for depositing a coating on a substrate by means of pvd methods and the coating obtained by said process

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3635811A (en) * 1967-11-06 1972-01-18 Warner Lambert Co Method of applying a coating
US4098452A (en) * 1975-03-31 1978-07-04 General Electric Company Lead bonding method
US5096562A (en) * 1989-11-08 1992-03-17 The Boc Group, Inc. Rotating cylindrical magnetron structure for large area coating
US5962923A (en) * 1995-08-07 1999-10-05 Applied Materials, Inc. Semiconductor device having a low thermal budget metal filling and planarization of contacts, vias and trenches
SE9704607D0 (sv) 1997-12-09 1997-12-09 Chemfilt R & D Ab A method and apparatus for magnetically enhanced sputtering
GB9705022D0 (en) 1997-03-11 1997-04-30 James Alec C Support means locatable so as to span a gap between two surfaces
WO1998046807A1 (en) * 1997-04-14 1998-10-22 Cemecon-Ceramic Metal Coatings-Dr.-Ing. Antonius Leyendecker Gmbh Method and device for pvd coating
US20020046944A1 (en) * 2000-06-28 2002-04-25 Ehood Geva Method and apparatus for reducing noise in a sputtering chamber
SE525231C2 (sv) 2001-06-14 2005-01-11 Chemfilt R & D Ab Förfarande och anordning för att alstra plasma
JP4101554B2 (ja) * 2001-08-17 2008-06-18 株式会社神戸製鋼所 スパッタ装置及び方法
US7172681B2 (en) * 2003-02-05 2007-02-06 Bridgestone Corporation Process for producing rubber-based composite material
DE10318364A1 (de) * 2003-04-23 2004-11-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Einrichtung zum Beschichten eines stationär angeordneten Substrats durch Puls-Magnetron-Sputtern
US7663319B2 (en) 2004-02-22 2010-02-16 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
EP1609882A1 (de) 2004-06-24 2005-12-28 METAPLAS IONON Oberflächenveredelungstechnik GmbH Kathodenzerstäubungsvorrichtung und -verfahren
SE0402644D0 (sv) * 2004-11-02 2004-11-02 Biocell Ab Method and apparatus for producing electric discharges
JP2006161088A (ja) * 2004-12-06 2006-06-22 Canon Inc スパッタ装置
US20060260938A1 (en) * 2005-05-20 2006-11-23 Petrach Philip M Module for Coating System and Associated Technology
DE102005033769B4 (de) 2005-07-15 2009-10-22 Systec System- Und Anlagentechnik Gmbh & Co.Kg Verfahren und Vorrichtung zur Mehrkathoden-PVD-Beschichtung und Substrat mit PVD-Beschichtung
DE102006017382A1 (de) * 2005-11-14 2007-05-16 Itg Induktionsanlagen Gmbh Verfahren und Vorrichtung zum Beschichten und/oder zur Behandlung von Oberflächen
GB0608582D0 (en) 2006-05-02 2006-06-07 Univ Sheffield Hallam High power impulse magnetron sputtering vapour deposition
DE102006021994B4 (de) * 2006-05-10 2017-08-03 Cemecon Ag Beschichtungsverfahren

Also Published As

Publication number Publication date
CN102027564B (zh) 2013-05-22
DE202009018428U1 (de) 2011-09-28
CN102027564A (zh) 2011-04-20
US20110180389A1 (en) 2011-07-28
JP2011518950A (ja) 2011-06-30
EP2272080A2 (de) 2011-01-12
US9812299B2 (en) 2017-11-07
EP2272080B1 (de) 2012-08-01
WO2009132822A2 (de) 2009-11-05
WO2009132822A3 (de) 2010-01-21

Similar Documents

Publication Publication Date Title
JP5448232B2 (ja) 物体を前処理及びコーテイングするための装置及び方法
EP2157205B1 (en) A high-power pulsed magnetron sputtering process as well as a high-power electrical energy source
US6413382B1 (en) Pulsed sputtering with a small rotating magnetron
JP4208970B2 (ja) 交互に正電圧および負電圧にされる複数のアノードを用いる絶縁材料の連続堆積
CN102308358B (zh) 具有自清洁阳极的闭合漂移磁场离子源装置及基材改性修改方法
EP2597172B1 (en) Ion bombardment apparatus and method for cleaning of surface of base material using the same
JP2011518950A5 (enExample)
KR100260601B1 (ko) 기판 코팅장치
JPH0841636A (ja) 反応性スパッタ方法および装置
TW200830390A (en) Method and apparatus for manufacturing cleaned substrates or clean substrates which are further processed
JPH09186150A (ja) 化学蒸着法により基板を被覆する装置
EP0818801A2 (en) Plasma treating apparatus
JP5649333B2 (ja) イオンボンバードメント装置及びこの装置を用いた基材表面のクリーニング方法
US10407767B2 (en) Method for depositing a layer using a magnetron sputtering device
US20080308410A1 (en) Redundant Anode Sputtering Method and Assembly
US20070144901A1 (en) Pulsed cathodic arc plasma
CN210974853U (zh) 一种配置热丝的电弧离子镀膜装置
KR100480357B1 (ko) 동기화된 이온 빔 소스와 듀얼 마그네트론 스퍼터를가지는 박막 형성 장치
JP4512311B2 (ja) 真空処理プロセスのためのソースの操作方法
EP2159820B1 (en) A physical vapour deposition coating device as well as a physical vapour deposition method
JP7696292B2 (ja) プラズマ処理を実行するためのプラズマ源のための磁石構成
JP6832572B2 (ja) マグネトロンスパッタ法による装飾被膜の形成方法
EP2607517A1 (en) Low temperature arc ion plating coating
CN110468379A (zh) 一种配置热丝的电弧离子镀膜装置
RU2423754C2 (ru) Способ и устройство для изготовления очищенных подложек или чистых подложек, подвергающихся дополнительной обработке

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120420

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130704

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130710

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20130928

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131007

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131107

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131221

R150 Certificate of patent or registration of utility model

Ref document number: 5448232

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250