JP5447632B2 - 基板処理装置 - Google Patents

基板処理装置 Download PDF

Info

Publication number
JP5447632B2
JP5447632B2 JP2012261170A JP2012261170A JP5447632B2 JP 5447632 B2 JP5447632 B2 JP 5447632B2 JP 2012261170 A JP2012261170 A JP 2012261170A JP 2012261170 A JP2012261170 A JP 2012261170A JP 5447632 B2 JP5447632 B2 JP 5447632B2
Authority
JP
Japan
Prior art keywords
gas
wafer
substrate
turntable
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2012261170A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013055356A (ja
JP2013055356A5 (https=
Inventor
寿 加藤
学 本間
宏之 菊地
有 和村
淳 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2012261170A priority Critical patent/JP5447632B2/ja
Publication of JP2013055356A publication Critical patent/JP2013055356A/ja
Publication of JP2013055356A5 publication Critical patent/JP2013055356A5/ja
Application granted granted Critical
Publication of JP5447632B2 publication Critical patent/JP5447632B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Chemical Vapour Deposition (AREA)
JP2012261170A 2012-11-29 2012-11-29 基板処理装置 Active JP5447632B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012261170A JP5447632B2 (ja) 2012-11-29 2012-11-29 基板処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012261170A JP5447632B2 (ja) 2012-11-29 2012-11-29 基板処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2009095213A Division JP5181100B2 (ja) 2009-04-09 2009-04-09 基板処理装置、基板処理方法及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2013055356A JP2013055356A (ja) 2013-03-21
JP2013055356A5 JP2013055356A5 (https=) 2013-08-15
JP5447632B2 true JP5447632B2 (ja) 2014-03-19

Family

ID=48132026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012261170A Active JP5447632B2 (ja) 2012-11-29 2012-11-29 基板処理装置

Country Status (1)

Country Link
JP (1) JP5447632B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10847713B2 (en) 2018-05-18 2020-11-24 Samsung Electronics Co., Ltd. Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170022459A (ko) * 2015-08-20 2017-03-02 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
JP2019087576A (ja) * 2017-11-02 2019-06-06 東京エレクトロン株式会社 成膜装置、及び成膜方法
JP7243521B2 (ja) * 2019-08-19 2023-03-22 東京エレクトロン株式会社 成膜方法及び成膜装置
CN114823263B (zh) * 2021-01-21 2025-09-16 东京毅力科创株式会社 基板处理装置
JP7616898B2 (ja) * 2021-02-17 2025-01-17 東京エレクトロン株式会社 膜厚測定装置、成膜システム及び膜厚測定方法
CN116892015A (zh) * 2023-08-28 2023-10-17 北京北方华创微电子装备有限公司 承载装置和半导体工艺设备

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347228A (ja) * 2002-05-30 2003-12-05 Renesas Technology Corp 半導体装置の製造方法および熱処理装置
JP4681886B2 (ja) * 2003-01-17 2011-05-11 富士通セミコンダクター株式会社 半導体装置
DE102004056170A1 (de) * 2004-08-06 2006-03-16 Aixtron Ag Vorrichtung und Verfahren zur chemischen Gasphasenabscheidung mit hohem Durchsatz
US20060073276A1 (en) * 2004-10-04 2006-04-06 Eric Antonissen Multi-zone atomic layer deposition apparatus and method
US20070218702A1 (en) * 2006-03-15 2007-09-20 Asm Japan K.K. Semiconductor-processing apparatus with rotating susceptor
JP2008112762A (ja) * 2006-10-27 2008-05-15 Tokyo Electron Ltd 高誘電体膜の形成方法および半導体装置の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10847713B2 (en) 2018-05-18 2020-11-24 Samsung Electronics Co., Ltd. Cryogenic oxidation of metal layer of magnetic-tunnel-junction (MTJ) device

Also Published As

Publication number Publication date
JP2013055356A (ja) 2013-03-21

Similar Documents

Publication Publication Date Title
JP5181100B2 (ja) 基板処理装置、基板処理方法及び記憶媒体
JP5131240B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP5287592B2 (ja) 成膜装置
JP5423529B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP5375853B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP5141607B2 (ja) 成膜装置
JP5310283B2 (ja) 成膜方法、成膜装置、基板処理装置及び記憶媒体
JP5093162B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP5444961B2 (ja) 成膜装置及び成膜方法
JP5423205B2 (ja) 成膜装置
JP5625624B2 (ja) 成膜装置、成膜方法及び記憶媒体
JP5447632B2 (ja) 基板処理装置
KR101537946B1 (ko) 반도체 장치의 제조 방법, 기판 처리 방법, 기억 매체 및 기판 처리 장치
JP2011151343A (ja) プラズマ処理装置
JP5549754B2 (ja) 成膜装置
JP5692337B2 (ja) 成膜装置、成膜方法及び記憶媒体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130625

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130626

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130822

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131203

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131216

R150 Certificate of patent or registration of utility model

Ref document number: 5447632

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250