JP5377389B2 - LAMINATED FILM AND ITS MANUFACTURING METHOD, ELECTRONIC DEVICE AND ITS MANUFACTURING METHOD - Google Patents

Description

  The present invention relates to a laminated film, a manufacturing method thereof, an electronic device, and a manufacturing method thereof.

  Conventionally, when manufacturing an electronic device such as an organic electroluminescence display device, a liquid crystal display device, and an X-ray imaging device, functional elements such as electrodes and functional layers are sequentially formed on a support substrate. As the support substrate, a glass substrate is generally used from the viewpoints of heat resistance, flatness, light transmission, insulation, gas barrier properties, and the like. However, the glass substrate is poor in impact resistance and flexibility and is easily broken. Further, since the glass substrate is heavier than the resin film, it is disadvantageous for reducing the weight of the apparatus.

On the other hand, the resin film is more advantageous than the glass substrate in terms of flexibility and weight reduction.
As a resin film used for manufacturing an electronic device, for example, a laminated film in which a functional film such as a polyimide film or copper, an adhesive layer, and a reinforcing film are laminated has been proposed (see Patent Document 1).

JP 2009-154293 A

  The present invention relates to a resin film that is easily formed with high accuracy on a resin film supported by a support, and that is easy to peel off from a support after forming the functional element, a method for manufacturing the same, an electronic device, and a method for manufacturing the same The purpose is to provide.

In order to achieve the above object, the following present invention is provided.
<1> a first resin film having a different surface roughness on both sides, and a second resin film having a different surface roughness on both sides, the surface having the larger surface roughness of the first resin film; A laminated film in which a surface having a large surface roughness of the second resin film is bonded.
<2> The laminated film according to <1>, wherein the first resin film and the second resin film are bonded to each other so that directions having the largest degree of expansion and contraction in the in-plane directions are different from each other.
<3> The laminated film according to <1> or <2>, wherein an inorganic layer is sandwiched between the first resin film and the second resin film.
<4> A laminated film according to <1> or <2>, wherein a laminated film of an inorganic layer and an organic layer is sandwiched between the first resin film and the second resin film the film.
<5> The laminated film according to <3> or <4>, wherein the inorganic layer is a metal layer.
<6> From the first roll wound with the first resin film having different surface roughness on both sides and the second roll wound with the second resin film having different surface roughness on both sides, the first The step of unwinding the resin film and the second resin film, the surface of the first resin film unwound from the first roll, the surface having the larger surface roughness, and the unwinding from the second roll And a step of bonding the surface of the second resin film that has been taken out to the surface having the larger surface roughness.
<7> In the step of laminating the first resin film and the second resin film, the first resin film and the second resin film are each in the direction with the largest degree of expansion and contraction in the respective in-plane directions. The manufacturing method of the laminated | multilayer film as described in <6> bonded together so that may mutually differ.
<8> In the step of bonding the first resin film and the second resin film, the first resin with an inorganic layer sandwiched between the first resin film and the second resin film. The method for producing a laminated film according to <6> or <7>, wherein the film and the second resin film are bonded together.
<9> The method for producing a laminated film according to <8>, wherein a metal layer is sandwiched as the inorganic layer between the first resin film and the second resin film.
<10> a step of preparing the laminated film according to any one of <1> to <5>, which is detachably attached to a support;
Forming a functional element on the laminated film supported by the support;
Forming the functional element, and then peeling the laminated film from the support.
<11> The electron according to <10>, wherein in the step of forming the functional element using the laminated film according to <5> as the laminated film, the functional element is formed by grounding a metal layer of the laminated film. Device manufacturing method.
<12> An electronic device comprising the laminated film according to any one of <1> to <5>, and a functional element formed on the laminated film.

  According to the present invention, it is easy to form a functional element on a resin film supported by a support with high accuracy, and after forming the functional element, the resin film that easily peels from the support, the manufacturing method thereof, the electronic device, and the device A manufacturing method is provided.

It is the schematic which shows an example of a structure of the laminated | multilayer film based on this invention. It is the schematic which shows the cross section of the laminated film which concerns on 1st Embodiment. It is the schematic which shows an example of the manufacturing method of the laminated film which concerns on 1st Embodiment. It is the schematic which shows the cross section of the laminated film which concerns on 2nd Embodiment. It is the schematic which shows the cross section of the laminated film which concerns on 3rd Embodiment. It is the schematic which shows an example of the manufacturing method of the laminated film which concerns on 3rd Embodiment. It is the schematic which shows an example of the process of manufacturing an electronic device using the laminated | multilayer film concerning this invention. It is the schematic which shows the state which supported the resin film with the support body, when forming a functional element on a resin film.

Hereinafter, the present invention will be specifically described with reference to the accompanying drawings.
When functional elements such as thin film transistors and organic electroluminescence elements are formed on a resin film, the resin film is flexible, so it is supported by a support such as a glass substrate, and is then supported after the functional elements are formed on the resin film. It is necessary to peel from the body.

When producing a resin film (referred to as “film” as appropriate), for example, after extruding a molten film of an organic material from an extrusion die and cooling it, stretching (biaxial stretching) is performed at a predetermined magnification in the vertical and horizontal directions. To form a resin film having a predetermined thickness. And the resin film after extending | stretching is wound up, stored as a roll shape, conveyance, etc. are performed.
Thus, when winding the resin film in a roll shape, in order to prevent the occurrence of scratches due to rubbing and the like when the overlapping films are in close contact with each other, an uneven surface with a height of about 1 μm is formed on one side to make an easily adhesive surface, There is a way to avoid the films sticking directly together.

  When a functional element is formed using such a resin film, the resin film unwound from a roll and cut to a predetermined length is detachably bonded to a supporting substrate such as glass via an adhesive layer (as needed "). And after surface treatment such as film formation and patterning on the film temporarily attached to the support substrate, it peels off from the support substrate, but the adhesion between the film and the support substrate becomes too strong and it may be difficult to peel off. is there.

  When the surface of the resin film having a large surface roughness (the side on which the concavo-convex layer is formed) is attached to the support substrate, it adheres more strongly than the case of attaching the flat surface on the opposite side to form a functional element. Thereafter, it is difficult to peel off from the support substrate, and it takes a long time to peel off, which may lead to a decrease in productivity or damage to the functional element. On the other hand, as shown in FIG. 8, if the flat surface of the resin film 112 is attached to the support substrate 110, there is an advantage that it is easily peeled later. For example, a process such as first forming a thick film for planarization is required.

  Therefore, the present inventor does not need to form a thick film for flattening, and peels off from the support substrate after forming the element, if a laminated film in which the surfaces with large surface roughness are bonded together is formed. I found it easier to do.

FIG. 1 schematically shows an example of an embodiment according to the present invention. The laminated film 100 according to the present embodiment includes a first resin film 10 having a different surface roughness on both sides, and a second resin film 20 having a different surface roughness on both sides, and the first resin film 10. The surface with the larger surface roughness and the surface with the larger surface roughness of the second resin film 20 are bonded together. An adhesive layer 30 is provided between the first resin film 10 and the second resin film 20, and the resin films are bonded so as not to peel off.
With a resin film having such a structure, it is not necessary to form a thick planarizing film on the surface of the resin film, and it is easy to form a functional element with high accuracy while being supported by a support, and a functional element is formed. After that, it is easy to peel off from the support.

<First Embodiment>
FIG. 2 schematically shows a cross section of the laminated film according to the first embodiment. The first resin film 10 and the second resin film 20 have different surface roughness on both surfaces, and the surface of the first resin film 10 having the larger surface roughness (the surface on which the irregularities 11 are formed) and the first resin film 10. The surface of the resin film 20 having a large surface roughness (the surface on which the irregularities 21 are formed) is bonded to the resin film 20 via the adhesive layer 30. In addition, the surface in which such unevenness | corrugation is formed is also called an easily bonding surface, and the layer which has an unevenness | corrugation may be provided as an easily bonding layer.

  In addition, the surface roughness on both surfaces of each resin film 10 and 20 has many protrusions observed with an optical microscope when there is an easy adhesion layer, and there are protrusions close to 1 μm when evaluated with a surface roughness meter, When a micro area is evaluated by an AFM (atomic force microscope) or the like, Ra is measured at about 1 nm. For example, when manufacturing an electronic device in which a functional element such as an organic electroluminescence element is formed on the laminated film 100, after temporarily attaching one surface to a support such as a glass substrate and forming the functional element on the other surface Then, it will peel from the support. From these viewpoints, it is preferable that the surface roughness of the surfaces of the resin films 10 and 20 that are both surfaces of the laminated film 100 (surface opposite to the bonding surface) is somewhat small, for example, when evaluated by AFM Ra is preferably 0.5 nm or less.

  As the 1st resin film 10 and the 2nd resin film 20, the surface roughness of both surfaces is different, or the surface roughness of both surfaces is different by forming an easy adhesion layer on one surface. Examples of the material constituting the resin film include polyesters such as polyethylene terephthalate (PET), polybutylene phthalate, and polyethylene naphthalate (PEN), polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, polycycloolefin, and norbornene resin. An organic material such as poly (chlorotrifluoroethylene), or a hybrid material containing Si fine particles.

The first resin film 10 and the second resin film 20 may be different types of film, but if the coefficient of thermal expansion or the expansion / contraction ratio is different, the laminated film 100 may be warped or peeled off. Is preferably used.
In addition, the thickness of each of the first resin film 10 and the second resin film 20 is not particularly limited and does not have to be the same thickness, but if the thickness is too thin, elongation or tearing may occur when pasting, There exists a possibility that the intensity | strength of the laminated | multilayer film 100 may become inadequate. On the other hand, when the resin films 10 and 20 are too thick, the flexibility becomes poor, and the flexibility of the electronic device using the laminated film 100 may be insufficient. From such a viewpoint, the thickness of each of the resin films 10 and 20 is preferably 5 μm or more and 200 μm or less, and the total thickness of the laminated film 100 is preferably 10 μm or more and 500 μm or less.

The method for producing the laminated film 100 according to the present embodiment is not particularly limited, but for example, a method as shown in FIG. 3 can be employed.
First, from a first roll 10A wound with a first resin film 10 with different surface roughness on both sides and a second roll 20A wound with a second resin film 20 with different surface roughness on both sides, The first resin film 10 and the second resin film 20 are respectively unwound. Next, the surface of the first resin film 10 unwound from the first roll 10A has a larger surface roughness, and the surface roughness of the second resin film 20 unwound from the second roll 20A. Bond the side with the larger side. For example, when the outer surface of each of the films 10 and 20 has a larger surface roughness than the inner surface, the outer surfaces of the resin films 10 and 20 unwound from the rolls 10A and 20A are shown in FIG. May be bonded through a pair of rollers 32A and 32B for bonding which are arranged opposite to each other. In addition, before bonding resin films, an adhesive agent is provided to the bonding surface of at least one film.

As the adhesive, it is preferable that the resin films 10 and 20 are firmly attached to each other and insoluble in a solvent or water used in a device manufacturing process. Specifically, coating-type epoxy-based adhesion can be mentioned.
The method for applying the adhesive is not particularly limited. For example, a spray coating method, a casting method, a die coating method, a gravure coating method, a roll coating method, a curtain coating method, a bar coating method, a wire bar coating method, an inkjet method, A blade coating method, a screen coating method, a printing method, a transfer method, or the like can be used.

  If the thickness of the adhesive layer 30 is too thin, the adhesive force will be insufficient, and if it is too thick, thickness unevenness may occur or the flexibility of the entire laminated film 100 may be reduced. From these viewpoints, the thickness of the adhesive layer 30 is, for example, not less than 1 μm and not more than 3 μm.

According to the method as described above, the laminated film 100 according to this embodiment can be continuously produced. What is necessary is just to cut | disconnect the laminated | multilayer film 100 which bonded resin films together in order to predetermined length.
In order to suppress permeation of oxygen and moisture, an inorganic layer such as SiO ₂ , SiN, or SiON may be formed as an inorganic layer on at least one surface of the laminated film 100.

In the method described above, the directions (longitudinal directions) in which the resin films 10 and 20 are unwound are combined and bonded together, but may be bonded so that the directions of the resin films 10 and 20 are different.
Even in the case of a resin film produced by stretching a resin film-like material horizontally and vertically in a melt extrusion method or the like, the expansion / contraction magnification is usually different in the longitudinal and lateral directions. When forming a functional element on a resin film, if patterning by film formation or etching is performed, the resin film itself may be heated or may come into contact with a solvent. When the resin film is exposed to heat or a solvent, it shrinks or expands in the in-plane direction. In particular, if the difference in expansion / contraction magnification between the length and width is large, the so-called alignment accuracy is likely to be lowered.

  Then, if the 1st resin film 10 and the 2nd resin film 20 are bonded together so that the direction with the largest expansion degree in each in-plane direction may mutually differ, the difference of the expansion and contraction of the length and breadth in the lamination film 100 whole. And the alignment accuracy can be improved. In particular, if bonding is performed so that the directions with the greatest degree of expansion / contraction in the in-plane directions of the resin films 10 and 20 are orthogonal, the vertical / horizontal expansion / contraction difference when the laminated film 100 is formed is greatly suppressed. In this case, for example, it is preferable that the unwinding direction (longitudinal stretching direction) of the first resin film 10 and the unwinding direction (longitudinal stretching direction) of the second resin film 20 are bonded to each other at right angles.

<Second Embodiment>
FIG. 4 schematically shows a cross section of the laminated film according to the second embodiment. In the laminated film 200 of the present embodiment, the inorganic layer 12 is sandwiched between the first resin film 10 and the second resin film 20. If it is the laminated film 200 in which the inorganic layer 12 is provided between the first resin film 10 and the second resin film 20, the functional element formed on the laminated film 200 is suppressed from permeation of oxygen and moisture. Can be protected and the life can be extended. Further, since the inorganic layer 12 is interposed between the resin films, the expansion and contraction of the laminated film 200 is suppressed when exposed to heat or a solvent, and the alignment accuracy can be improved.

As the inorganic layer 12, a film made of an inorganic material that hardly permeates oxygen and moisture and has high adhesion to the resin film is selected. For example, the metal _layer, SiO 2, SiN, inorganic layer of SiON, or the like. Alternatively, an inorganic layer and an organic layer, for example, an acrylic organic thin film layer may be alternately laminated. For example, when manufacturing a so-called top emission type organic EL display device using the laminated film 200 according to the present embodiment, it is not necessary to transmit light from the laminated film 200 side. A light-shielding metal layer such as Mo, Cu, or Ag may be used. On the other hand, when a bottom emission type organic EL display device that transmits light from the laminated film 200 side is manufactured, a material that transmits light may be selected for the inorganic layer 12. Depending on the thickness of the inorganic layer 12, for example, an inorganic layer such as SiO ₂ , SiN, or SiON, or a laminated film of an inorganic layer and an organic layer is preferable. Flexibility is improved by using a stacked structure of an organic layer and an inorganic layer.

For example, if an inorganic layer such as SiO ₂ , SiN, or SiON is formed on the surface of the resin film having the larger surface roughness of at least one of the first resin film 10 and the second resin film 20 by a high frequency sputtering method or the like. good. In the laminated film 200 shown in FIG. 4, the inorganic layer 12 is formed on one side of the first resin film 10.
The thickness of the inorganic layer 12 may be determined according to required gas barrier properties, light transmittance, and the like, and is, for example, 50 nm or more and 5 μm or less.
In the present embodiment, the lamination film 200 can be further prevented from expanding and contracting and the alignment accuracy can be improved by bonding the resin films so that the direction of the maximum expansion and contraction in the in-plane direction is orthogonal. .

<Third Embodiment>
FIG. 5 schematically shows a cross section of the laminated film according to the third embodiment. In the laminated film 300 of this embodiment, the metal layer 40 is sandwiched between the first resin film 10 and the second resin film 20. By interposing the metal layer 40 between the resin films, it is possible to reliably prevent the permeation of oxygen and moisture, and the expansion and contraction of the laminated film 300 is more effectively suppressed when exposed to heat or a solvent. The alignment accuracy can be further improved.

  In addition to functioning as an inorganic layer, the metal layer 40 can also function as a ground. In general, a resin film is easily charged with static electricity, and when a functional element such as an electrode terminal is formed on the resin film, there is a possibility that the dielectric breakdown of the insulating film and the characteristic change of the functional element occur due to static electricity charged on the resin film. However, since the laminated film 300 according to the present embodiment has the metal layer 40 between the resin films 10 and 20, an insulating layer caused by static electricity is formed by grounding the metal layer 40 and forming the functional element in the step of forming the functional element. It is possible to suppress the dielectric breakdown and the characteristic change of the functional element. For example, an unstable factor due to static electricity is reduced by arranging the upper electrode and the metal layer 40 at the same potential in the step of crimping and cutting the terminal.

  The thickness of the metal layer 40 may be determined according to the material, required gas barrier properties, etc. If the metal layer 40 is too thin, it may be damaged when bonded to a resin film or grounded when a device is manufactured. May be difficult to remove. On the other hand, if the metal layer 40 is too thick, the flexibility of the laminated film 300 may be reduced or the weight may be increased. From these viewpoints, the thickness of the metal layer 40 is, for example, not less than 0.05 μm and not more than 5 μm. In addition, what is necessary is just to laminate | stack the film | membrane whose thickness is 0.05-5 micrometers or less when it is set as the laminated film of an inorganic layer and an organic layer.

  The laminated film 300 according to the present embodiment can be manufactured, for example, by a method as shown in FIG. A first roll 10A around which the first resin film 10 is wound, a second roll 20A around which the second resin film 20 is wound, and a metal film roll 40A around which a metal film 40 to be a metal layer is wound. Prepare each. And while unwinding the 1st resin film 10 and the 2nd resin film 20, unwinding so that the metal film 40 may be arrange | positioned between the two unwound resin films 10 and 20, and these 3 The films 10, 40 and 20 are stacked and bonded together. In addition, before these films 10, 40, and 20 contact, it adhere | attaches between the 1st resin film 10 and the metal film 40, and between the 2nd resin film 20 and the metal film 40, respectively. Apply agent. As the type of adhesive, the method of applying the adhesive, the thickness of the adhesive layer, and the like, those mentioned in the method for manufacturing the laminated film 100 according to the first embodiment can be adopted.

<Method for manufacturing electronic device>
Next, a method for manufacturing an electronic device using the laminated film according to the present invention will be described. The method for producing an electronic device using the laminated film according to the present invention includes a step of preparing the laminated film of the above-described embodiment that is detachably attached to a support,
Forming a functional element on the laminated film of the substrate;
After forming the functional element, peeling the laminated film from the support.
FIG. 7 shows an example of a process for forming a thin film transistor (TFT) and a storage capacitor on the laminated film according to the present invention. The functional elements are not limited to TFTs and storage capacitors, and may be selected according to the electronic device to be manufactured.

First, a laminated film 100 that is detachably attached to the support 110 is prepared (FIG. 7A).
The support 110 is a substrate for flatly supporting the laminated film 100 when forming a functional element on the flexible laminated film 100. As the support substrate 110 serving as a support, a substrate that is less likely to deform than the laminated film 100 and has a high flatness, for example, a glass substrate, a ceramic substrate, a silicon substrate, or the like can be used. In particular, since a glass substrate is inexpensive, it is suitable as a support substrate.
Examples of means for removably attaching the laminated film 100 to the support substrate 110 include an adhesive and a double-sided pressure-sensitive adhesive sheet. Examples of the adhesive include an acrylic pressure-sensitive adhesive, and the adhesive may be applied to one side of the laminated film 100 or the support substrate 110 and attached to each other via the adhesive.

  Next, the functional element 120 is formed over the laminated film 100 supported by the support 110 (FIG. 7B).

-Gate electrode and lower electrode of storage capacitor-
As shown in FIG. 7B, after a conductive layer made of Mo or the like is formed on one surface of the laminated film 100 by sputtering, the gate electrode 60 of the TFT and the lower electrode of the storage capacitor (capacitor) are formed by photolithography and etching. 70 are each patterned.
As a material constituting these electrodes 60 and 70, in addition to Mo, for example, metals such as Al, Cr, Ta, Ti, Au, and Ag, alloys such as Al—Nd and APC, tin oxide, zinc oxide, and oxide Examples thereof include metal oxide conductive films such as indium, indium tin oxide (ITO), and zinc indium oxide (IZO), organic conductive compounds such as polyaniline, polythiophene, and polypyrrole, or a mixture thereof.

  As a method for forming the gate electrode 60 and the lower electrode 70, for example, a wet method such as a printing method and a coating method, a physical method such as a vacuum deposition method, a sputtering method, and an ion plating method, a chemical method such as a CVD method and a plasma CVD method. After film formation is performed according to a method appropriately selected in consideration of suitability with a material to be used among other methods, patterning is performed by a photolithography method and an etching method. Alternatively, the electrodes 60 and 70 may be formed by an inkjet method, a lift-off method, a method using a shadow mask, or the like.

Although the thickness of the gate electrode 60 and the lower electrode 70 depends on the constituent material, for example, the thickness of the gate electrode 60 and the lower electrode 70 is set to 10 nm or more from the viewpoint of lowering the resistance of the gate wiring and preventing the delay of the TFT control signal. From the viewpoint of preventing breakage by reducing the level difference of each layer to be formed, the thickness is set to 1000 nm or less.
Since the laminated film 100 according to this embodiment has a small surface roughness on both sides, each electrode can be formed with high accuracy.

-Insulation layer-
Next, an insulating layer 62 that also serves as a gate insulating film of the TFT and a dielectric layer of the capacitor is formed.
The insulating layer 62 is made of an insulator such as SiO ₂ , SiN _x , SiON, Al ₂ O ₃ , Y ₂ O ₃ , Ta ₂ O ₅ , HfO ₂ , and may be an insulating layer containing two or more of these compounds. Good. Alternatively, a polymer insulator such as polyimide may be used.

  The insulating layer 62 is used from, for example, a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method, or an ion plating method, or a chemical method such as CVD or plasma CVD method. The film is formed according to a method appropriately selected in consideration of suitability for the material to be used. If necessary, patterning may be performed into a predetermined shape by a photolithography method, a method using a shadow mask, or the like.

  The insulating layer 62 needs to have a thickness for suppressing leakage current and improving the voltage resistance. On the other hand, if the insulating layer 62 is too thick, the driving voltage is increased. Although depending on the material of the insulating layer 62, from the viewpoint of time required for film formation, voltage resistance, and dielectric constant, the thickness of the insulating layer 62 is, for example, 50 nm to 1000 nm for an inorganic insulator, and polymer insulation If it is a body, considering the self-assembled film, the thickness is set to several nm to 5 μm.

-Active layer-
Next, an active layer (channel layer) 64 is formed. The active layer 64 is preferably a film that can be formed at a low temperature such as an oxide semiconductor. Conventionally, amorphous silicon and polycrystalline silicon are generally used as materials constituting the active layer, but formation of these silicon films requires a high-temperature process, and the laminated film 100 may be deformed. Therefore, it is preferable to form the active layer 64 with an amorphous oxide semiconductor that can be formed at a low temperature by sputtering. Moreover, what can be formed at low temperature like an organic semiconductor may be used.

  Specifically, in the case of an oxide semiconductor, an oxide containing at least one of In, Ga, and Zn (for example, an In—O system) is preferable, and an oxide containing at least two of In, Ga, and Zn. (For example, In—Zn—O, In—Ga—O, and Ga—Zn—O) are more preferable, and oxides containing In, Ga, and Zn are particularly preferable. The electrical conductivity can be controlled by, for example, the oxygen partial pressure during film formation. In the case of an organic semiconductor, for example, pentacene, DNTT, etc. are conceivable.

IGZO-based oxide semiconductor layer is a carrier is an electron in the n-type _{semiconductor,} be a p-type oxide semiconductors such as _{ZnO · Rh 2 O 3, CuGaO} 2, SrCu 2 O 2 in the active layer 64 Alternatively, an oxide semiconductor disclosed in JP 2006-165529 A may be used.

The thickness of the active layer 64 is, for example, 5 nm or more and 150 nm or less from the viewpoint that the drain current flows sufficiently and the time required for film formation is not excessively long.
Further, the electrical conductivity of the active layer 64 is preferably 10 ⁻¹¹ Scm ⁻¹ or more and less than 10 ⁻⁷ Scm ⁻¹ in order to function as a channel layer.

In the case where an amorphous oxide layer containing, for example, In, Ga, and Zn is formed as the active layer 64, a gas phase is formed using a polycrystalline sintered body of an oxide semiconductor containing In, Ga, and Zn in a target composition. Film formation is performed using a film formation method. Among the vapor phase film forming methods, the sputtering method and the pulse laser deposition method (PLD method) are more preferable, and the sputtering method is particularly preferable from the viewpoint of mass productivity.
After film formation, patterning is performed by photolithography and etching. Alternatively, the active layer 64 may be formed by a lift-off method, a method using a shadow mask, or the like.

-Source electrode, drain electrode, and upper electrode of storage capacitor-
The source electrode 66A and the drain electrode 66B are formed so as to be in contact with the active layer 64 and to be separated from each other. By applying a voltage to the gate electrode 60, the current flowing between the source / drain electrodes 66A and 66B via the active layer 64 is controlled. In addition to the source / drain electrodes 66A and 66B, an upper electrode 72 of a capacitor connected to the drain electrode 66B is formed.

  Examples of the material constituting the source / drain electrodes 66A and 66B and the upper electrode 72 include metals such as Al, Cu, Mo, Cr, Ta, Ti, Au, and Ag, Al-Nd, Mo-Nb, and APC. Metal oxide conductive films such as alloys, tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO), organic conductive compounds such as polyaniline, polythiophene, polypyrrole, or laminated films thereof, A mixture is mentioned.

  The method for forming the source / drain electrodes 66A, 66B and the upper electrode 72 is not particularly limited, and is a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method or an ion plating method, CVD, plasma. A film is formed according to a method selected in consideration of suitability with a material from a chemical method such as a CVD method, and then patterned by a photolithography method and an etching method. Alternatively, the source / drain electrodes 66A and 66B and the upper electrode 72 may be formed by a lift-off method, a method using a shadow mask, or the like.

  For example, when ITO is selected as the material of the source / drain electrodes 66A and 66B and the upper electrode 72, the film can be formed according to a direct current or high frequency sputtering method, a vacuum deposition method, an ion plating method, etc. When a compound is selected, it can be performed according to a wet film forming method.

The thicknesses of the source / drain electrodes 66A and 66B and the upper electrode 72 are, for example, 10 nm or more and 1000 nm or less from the viewpoint of film forming properties, conductivity (reduction in resistance), etc., depending on the constituent materials.
By forming the source / drain electrodes 66A, 66B and the upper electrode 72, TFTs and capacitors are manufactured.

  Next, another functional layer is formed according to the electronic device to be manufactured as a final product. For example, an organic EL display device may be manufactured by sequentially forming an interlayer insulating film 68, an organic EL element, or the like, or a charge collection electrode, a photoelectric conversion layer (charge generation layer, charge transport layer), a bias electrode, fluorescence You may manufacture the radiation imaging device with which the body layer etc. were laminated | stacked.

In the above embodiment, the case of manufacturing a bottom gate type TFT in which the gate electrode 60 is formed on the glass surface has been described. However, the present invention is not limited to this. For example, the active layer and the source / drain electrodes are formed on the glass surface. A top gate TFT formed in the order of the insulating layer and the gate electrode may be manufactured.
The TFT is generally divided into a bottom contact type and a top contact type in the order in which the active layer and the source / drain electrodes are formed. That is, the source / drain electrodes may be formed before the active layer and the lower surface of the active layer may be in contact with the source / drain electrodes (bottom contact type), or the active layer may be formed before the source / drain electrodes. It is good also as a form (top contact type) which forms and the upper surface of an active layer contacts a source / drain electrode.

After forming the functional element 120 through the above steps, the laminated film 100 is peeled from the support 110 (FIG. 7C).
The method of peeling the support substrate 110 from the laminated film 100 is not particularly limited. For example, a jig is inserted into a part to make the peeling between the support substrate 110 and the laminated film 100 easy. At this time, since the flatness of the surface of the laminated film 100 bonded to the support substrate 110 is also high, it can be easily peeled off. Since it can peel from the support substrate 110, without applying a stress to the laminated film 100, it can also prevent that the functional element currently formed on the laminated film 100 is damaged.

As mentioned above, although this invention was demonstrated, this invention is not limited to the said embodiment and Example. For example, the use of the laminated film according to the present invention is not limited to the manufacture of an organic EL display device and a radiation imaging device, and may be applied to the manufacture of other electronic devices such as a liquid crystal display device and a plasma display device. Further, the manufacture of the organic EL display device is not limited to the active matrix type in which the TFT is formed, but may be applied to the manufacture of a passive matrix type organic EL display device or an organic EL light emitting device as a lighting device.
Moreover, when manufacturing a radiation imaging device, you may apply not only to the indirect type | mold provided with the fluorescent substance layer and the organic photoelectric converting layer but to the direct conversion type | mold manufacturing provided with the fluorescent substance layer.

10A 1st roll 10 1st resin film 12 Inorganic layer 20A 2nd roll 20 2nd resin film 30 Adhesive layer 32A, 32B Roller 40 Metal layer (metal film)
40A metal film roll 60 gate electrode 62 insulating layer 64 active layer 66A source electrode 66B drain electrode 68 interlayer insulating film 70 lower electrode 72 upper electrode 100 laminated film 110 support (supporting substrate)
120 functional element 200 laminated film 300 laminated film

Claims (12)

A first resin film having different surface roughness on both sides;
A second resin film having different surface roughness on both sides,
A laminated film in which a surface having a large surface roughness of the first resin film and a surface having a large surface roughness of the second resin film are bonded together.   2. The laminated film according to claim 1, wherein the first resin film and the second resin film are bonded to each other so that directions having the largest degree of expansion and contraction in the in-plane directions are different from each other.   The laminated film according to claim 1 or 2, wherein an inorganic layer is sandwiched between the first resin film and the second resin film.   The laminated film according to claim 1 or 2, wherein a laminated film of an inorganic layer and an organic layer is sandwiched between the first resin film and the second resin film.   The laminated film according to claim 3 or 4, wherein the inorganic layer is a metal layer. From the first roll wound with the first resin film having different surface roughness on both sides and the second roll wound with the second resin film having different surface roughness on both sides, the first resin film And unwinding each of the second resin films,
The surface on the side having a large surface roughness of the first resin film unwound from the first roll and the surface on the side having a large surface roughness of the second resin film unwound from the second roll A method for producing a laminated film, comprising a step of bonding the surfaces together.   In the step of bonding the first resin film and the second resin film, the first resin film and the second resin film are different from each other in the direction with the largest degree of expansion / contraction in the respective in-plane directions. The manufacturing method of the laminated | multilayer film of Claim 6 bonded together.   In the step of laminating the first resin film and the second resin film, the first resin film and the first resin film with the inorganic layer sandwiched between the first resin film and the second resin film The manufacturing method of the laminated film of Claim 6 or Claim 7 which bonds a 2nd resin film.   The method for producing a laminated film according to claim 8, wherein a metal layer is sandwiched as the inorganic layer between the first resin film and the second resin film. The step of preparing the laminated film according to any one of claims 1 to 5 detachably attached to a support;
Forming a functional element on the laminated film supported by the support;
Forming the functional element, and then peeling the laminated film from the support.   11. The electronic device manufacturing according to claim 10, wherein in the step of forming the functional element using the laminated film according to claim 5 as the laminated film, the functional element is formed by grounding a metal layer of the laminated film. Method. The laminated film according to any one of claims 1 to 5,
An electronic device comprising: a functional element formed on the laminated film.

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