JP5489640B2 - Manufacturing method of composite film and electronic component - Google Patents

Description

  The present invention relates to a composite film and a method for manufacturing an electronic component.

  Conventionally, when manufacturing an electronic device such as an organic electroluminescence display device, a liquid crystal display device, and an X-ray imaging device, electronic components such as electrodes and functional layers are sequentially formed on a support substrate. As the support substrate, a glass substrate is generally used from the viewpoints of heat resistance, flatness, light transmission, insulation, gas barrier properties, and the like. However, the glass substrate is poor in impact resistance and flexibility and is easily broken. Further, since the glass substrate is heavier than the resin film, it is disadvantageous for reducing the weight of the apparatus.

On the other hand, a resin film is more advantageous than a glass substrate in terms of flexibility and weight reduction, but its heat resistance is remarkably lower than that of a glass substrate, and the dimensional change due to heat and liquid is large, so the manufacturing process is greatly limited. The Further, since the resin film easily transmits oxygen and moisture, it is necessary to form an inorganic insulating film such as SiO ₂ as a gas barrier layer on the surface of the resin film.

  In order to take advantage of such a glass substrate and a resin film, a glass / polymer composite film in which a thin glass film and a resin layer are laminated has been proposed (see, for example, Patent Documents 1 to 4). As a method for producing such a composite film, for example, a method of applying a polymer to the surface of a continuous sheet-like glass film and curing it by UV exposure, followed by drying and winding in a roll while sandwiching the intermediate film Is disclosed (see Patent Document 1).

  Such a glass / polymer composite film has flexibility and barrier properties, is lightweight, and has a small thickness, so that it can be transported and stored in rolls and stacks, reducing transportation and storage costs, In addition, there is an advantage that the energy cost of equipment related to substrate handling in the manufacture of electronic components is reduced.

Special Table 2002-534305 gazette JP 2002-521234 Gazette JP-A-4-235527 JP 2004-172375 A

A TFT is formed on a glass / polymer composite film in order to manufacture an electronic component requiring high precision, for example, a thin film transistor (TFT) with the same degree of reliability as a TFT on a thick glass substrate. It is necessary to prevent scratches and contamination on the glass surface as much as possible.
An advantage of the glass / polymer composite film is that it can be formed into a roll or stack. However, when the film is formed into a roll or stack, the surfaces of the films are in close contact with each other, so that scratches and contamination are likely to occur.

  It is an object of the present invention to provide a composite film that can prevent scratches and contamination on the glass surface and can easily and highly accurately form an electronic component on the glass surface, and a method for manufacturing an electronic component using the composite film. .

In order to achieve the above object, the following present invention is provided.
<1> a glass film having a thickness of 50 to 200 μm ;
A water-soluble polymer layer provided on one surface of the glass film to protect the glass film and having an alkali ion content of 150 ppm or less composed of polyvinyl alcohol;
A water-insoluble polymer layer provided on the other surface of the glass film and supporting the glass film , the water-insoluble polymer being formed of at least one selected from polyethylene terephthalate, polybutylene phthalate and polyethylene naphthalate ; ,
A composite film having
A composite film according to <2> before Symbol water contact angle of the water-insoluble polymer layer is not less than 70 degrees <1>.
< 3 > a step of preparing a continuous band-shaped glass film having a thickness of 50 to 200 μm ;
Protecting the glass film on one surface of the glass film and forming a water-soluble polymer layer having an alkali ion content of 150 ppm or less composed of polyvinyl alcohol;
On the other surface of the glass film, a water-insoluble polymer layer is formed which supports the glass film and the water-insoluble polymer is formed of at least one selected from polyethylene terephthalate, polybutylene phthalate and polyethylene naphthalate. Process,
Cutting the band-shaped glass film formed with the water-soluble polymer layer and the water-insoluble polymer layer to produce a composite film;
Dissolving the water-soluble polymer layer with water or an aqueous solution and removing it from the composite film;
Forming an electronic component on the surface of the glass film exposed by removing the water-soluble polymer layer from the composite film;
The manufacturing method of the electronic component which has this.
< 4 > Between the step of producing the composite film and the step of forming the electronic component,
A plurality of composite films prepared by cutting the band-shaped glass film on which the water-soluble polymer layer and the water-insoluble polymer layer are formed, so that the water-soluble polymer layer and the water-insoluble polymer layer face each other. Step by step,
Separating each of the stacked composite films, and
< 3 > The manufacturing method of the electronic component as described in < 3 >.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the composite film which can prevent the damage | wound and contamination of the glass surface, and can form an electronic component on a glass surface easily and with high precision, and an electronic component using the same is provided.

It is the schematic which shows an example of a structure of the composite film which concerns on this invention. It is the schematic which shows an example of the manufacturing method of the composite film which concerns on this invention. It is the schematic which shows an example of the method of lamination | stacking of the composite film which concerns on this invention. It is the schematic which shows an example of the method of removing the curvature of the laminated | stacked composite film. It is the schematic which shows the state which removed the water-soluble polymer layer from the composite film which concerns on this invention. It is the schematic which shows an example which manufactured the thin-film transistor and the storage capacity on the glass surface of the composite film which concerns on this invention.

  Hereinafter, the present invention will be specifically described with reference to the accompanying drawings.

<Composite film>
FIG. 1 schematically shows an example of an embodiment according to the present invention. The composite film 100 according to the present embodiment is provided on one surface of the glass film 10 and the glass film 10, protects the glass film 10, and has an alkali ion content composed of polyvinyl alcohol of 150 ppm or less. And a water-insoluble polymer layer 30 that is provided on the other surface of the glass film 10 and supports the glass film 10. With such a configuration, both surfaces of the glass film 10 are protected by the polymer layers 20 and 30, respectively. Therefore, even if they are in close contact with each other in a roll or stack, the surface of the glass film 10 is scratched or contaminated. Can be effectively prevented.

And when manufacturing electronic parts, such as TFT, since only the water-soluble polymer layer 20 can be removed by wash | cleaning the composite film 100 with water etc., it exposed, without requiring a complicated process especially. Electronic components can be manufactured on the glass surface. As a result, an electronic device having gas barrier properties, flatness, heat resistance, flexibility, etc., on which an electronic component can be formed with high positional accuracy on a glass surface free from scratches and contamination. Can be manufactured.
Each configuration will be specifically described below.

-Glass film-
Since the glass film 10 constituting the composite film 100 is supported by the water-insoluble polymer layer 30, a glass film having a smaller thickness can be employed as compared with a case where a single glass is used as a support substrate.
The kind of the glass film 10 is not specifically limited, Quartz glass, an alkali free glass, borosilicate glass, soda-lime glass, etc. can be used. In addition, in order to reduce the elution ion from glass, it is preferable to use an alkali free glass. Moreover, when using soda-lime glass, it is preferable to use what gave barrier coatings, such as a silica.

The thickness of the glass film 10 is 50 to 200 μm , and more preferably 50 to 100 μm , from the viewpoint of preventing breakage in the electronic component manufacturing process and the like and having flexibility.
In addition, although the method of manufacturing the glass film 10 is not specifically limited, As a method of manufacturing a thin glass film, a fusion method, a download method, etc. are mentioned, for example, The glass film manufactured by these methods is used suitably. Can be used.

-Water-soluble polymer layer-
The water-soluble polymer layer 20 is provided on the surface of the glass film 10 on which the electronic component is formed, and protects the glass surface (the surface on which the electronic component is formed) during transportation and storage.
The water-soluble polymer layer 20 is preferably formed of a resin that is easily dissolved by water at room temperature (15 ° C.) to 45 ° C. The material constituting the water-soluble polymer layer 20 is solidified by applying a solution dissolved in a solvent such as water to the surface of the glass film 10 and drying it, and then dissolved and removed in a cleaning liquid such as water or an alkaline aqueous solution. It is not particularly limited as long as it is a resin that can be used.

Examples of the water-soluble polymer include polyvinyl alcohol (PVA) and modified products thereof, polyacrylic acid amide and derivatives thereof, ethylene / vinyl acetate copolymer, styrene / maleic anhydride copolymer, and ethylene / maleic anhydride copolymer. Polymers, isobutylene / maleic anhydride copolymer, polyvinylpyrrolidone, ethylene / acrylic acid copolymer, vinyl acetate / acrylic acid copolymer, carboxymethylcellulose, methylcellulose, casein, gelatin, starch derivatives, gum arabic, sodium alginate It is done. These water-soluble polymers may be used alone or in combination of two or more.
The water-soluble polymer used in the present invention was tested in accordance with a pencil scratch value measurement method (hand-scratch method) defined in JIS K5400-1990 8.4, and was scratched on the surface of the coating film with a pencil, and the test was conducted five times. Thus, the strength of the coating film (water-soluble polymer layer) of the present invention is preferably B or more from the core concentration of the pencil where the scratch of the coating film is twice or more.
From the viewpoints of film formability and solubility, polyvinyl alcohol, polyacrylic acid, or a composite film of any of these and silica is particularly preferable.

  The thickness of the water-soluble polymer layer 20 is preferably 0.1 to 10 μm and more preferably 1 to 5 μm from the viewpoint of protecting the surface of the glass film 10 and having flexibility as the entire composite film 100.

When forming an electronic component using the composite film 100 as a supporting substrate, the water-soluble polymer layer 20 is removed by being dissolved in water or an aqueous solution at room temperature to 45 ° C. The components contained in the water-soluble polymer layer 20 are water or the like. May dissolve in the cleaning solution and adhere to the exposed glass surface with a slight amount. For example, if alkali ions contained in the water-soluble polymer layer 20 adhere to the glass surface and remain, there is a possibility that a threshold shift is likely to occur when a TFT is formed on the glass surface. Therefore, the content of alkali ions contained in the water-soluble polymer layer 20 is preferably as small as possible, in particular, Ru der 150ppm or less in the present invention.

-Water-insoluble polymer layer-
The water-insoluble polymer layer 30 is provided on the opposite surface of the glass film 10 that forms the electronic component, and supports the glass film 10.
The water-insoluble polymer layer 30 is not dissolved by a cleaning liquid such as water used for dissolving the water-soluble polymer layer 20, and after dissolving and removing the water-soluble polymer layer 20, electrons are further exposed on the exposed glass surface. It is formed of a resin that can support the glass film 10 even after the components are formed.

Preferred materials constituting the water-insoluble polymer layer 30 include polyesters such as polyethylene terephthalate (PET), polybutylene phthalate, and polyethylene naphthalate (PEN), polystyrene, polycarbonate, polyethersulfone, polyarylate, polyimide, and polycycloolefin. , Organic materials such as norbornene resin and poly (chlorotrifluoroethylene). These water-insoluble polymers may be used alone or in combination of two or more.
The water-insoluble polymer in the present invention is at least one selected from polyethylene terephthalate, polybutylene phthalate, and polyethylene naphthalate.

The thickness of the water-insoluble polymer layer 30 is preferably 10 to 200 μm from the viewpoint of having flexibility as the entire composite film 100 and supporting the glass film 10 even after the electronic component is formed on the glass surface. 100-150 micrometers is more preferable.
The water-insoluble polymer layer 30 may be formed directly on one side of the glass film 10 or a water-insoluble resin film such as PET or PEN may be bonded via an adhesive layer (not shown). Good.

  Further, when storing and transporting a plurality of composite films 100, the water-soluble polymer layer 20 and the water-insoluble polymer layer 30 are stacked so that they are in contact with each other rather than the water-soluble polymer layers 20 of the composite film are in contact with each other. Therefore, adhesion between the composite films 100 can be prevented. In this case, it is not necessary to sandwich an intermediate sheet for preventing adhesion between the composite films, and the cost can be reduced. In particular, by selecting a material having a water contact angle of the water-insoluble polymer layer of 70 degrees or more, adhesion between the composite films 100 can be effectively prevented.

<Production method of composite film>
Next, the manufacturing method of the composite film 100 which concerns on this invention is demonstrated.
FIG. 2 schematically shows an example of a method for producing a composite film according to the present invention. First, a glass film roll 10A around which a continuous belt-like glass film 10 is wound is prepared.

-Formation of water-soluble polymer layer-
The glass film 10 is unwound from the roll 10 </ b> A, and a water-soluble polymer layer 20 that protects the glass film 10 is formed on one surface of the glass film 10 (the surface on the side where electronic components are manufactured). The method for forming the water-soluble polymer layer 20 is not particularly limited, and is a spray coating method, a casting method, a die coating method, a gravure coating method, a roll coating method, a curtain coating method, a bar coating method, a wire bar coating method, an inkjet method, a blade. A coating method, a screen coating method, a printing method, a transfer method, or the like can be used.
For example, as shown in FIG. 2, a PVA coating film 20 </ b> A is formed by applying a PVA solution to the entire surface of the glass film 10 moving at a constant speed in the direction of arrow A by an inkjet nozzle 22. Subsequently, the solidified PVA layer 20 can be formed by drying by heating at about 80 to 150 ° C. and evaporating the solvent by a drying means 24 such as a heater.

-Formation of water-insoluble polymer layer-
After forming the PVA layer 20, the water-insoluble polymer layer 30 is formed on the opposite surface of the glass film 10. The method for forming the water-insoluble polymer layer 30 is not particularly limited, and in addition to the various methods mentioned in the method for forming the water-soluble polymer layer 20, a film that forms the water-insoluble polymer layer 30 by applying an adhesive is continuously formed. You may stick together.

  For example, as shown in FIG. 2, the glass film 10 on which the PVA layer 20 is formed is turned upside down through the transport rollers 40A and 40B. The acrylic resin solution is applied to the surface of the glass film 10 moving in the direction of arrow B opposite to the surface on which the water-soluble polymer layer 20 is formed by the inkjet nozzle 32 to form the acrylic resin coating film 30A. Subsequently, the acrylic resin layer 30 solidified by drying by heating at about 220 ° C. and evaporating the solvent can be formed by a drying means 34 such as a heater.

The composite film 100 in which the PVA layer 20 and the acrylic resin layer 30 are formed on each surface of the glass film 10 is rolled up and collected. At this time, since the wound composite film roll 50 is in contact with the acrylic resin layer 30 of the inner composite film and the PVA layer 20 of the outer composite film, the composite films are suppressed from adhering to each other.
In the above method, after forming the water-soluble polymer layer 20, the water-insoluble polymer layer 30 is formed. However, the order of forming these polymer layers is not limited to this, and the water-insoluble polymer layer 30 is formed. After that, the water-soluble polymer layer 20 may be formed.

-Cutting process-
The continuous strip-shaped composite film (roll 50) is cut into a predetermined size according to the purpose by a cutting means such as a cutter before the electronic component is manufactured.
The composite films produced by cutting may be stacked one after another. In this case as well, the water-soluble polymer layer 20 of the composite film 100B on the lower side and the water-insoluble property of the composite film 100C on the upper side as shown in FIG. By sequentially stacking the polymer layers 30 so as to face each other, the composite films can be prevented from adhering to each other during storage.

  The composite films 100A, 100B, and 100C stacked in this way may be curved because they are cut in a roll shape. Therefore, it is preferable to remove the curvature before forming the electronic component. For example, as shown in FIG. 4, the curved composite films 100A, 100B, and 100C can be efficiently removed by heating and pressing them with the hot press machines 50A and 50B. Since the composite films 100A, 100B, and 100C are laminated so that the water-soluble polymer layer 20 and the water-insoluble polymer layer 30 face each other, the composite films 100 are effectively prevented from adhering to each other even during hot pressing. Is done.

<Manufacture of electronic components>
When manufacturing an electronic component using the composite film 100 as a support substrate, the composite films 100 are separated one by one from the laminated composite film, and the water-soluble polymer layer 20 is removed from each composite film 100 by dissolving it in water or an aqueous solution at room temperature to 45 ° C. To do. As shown in FIG. 5, the water-soluble polymer layer 20 can be easily removed together with the dirt adhering to the surface by washing with running water such as water (preferably pure water).
An electronic component is formed on the glass surface exposed by removing the water-soluble polymer layer 20 by washing according to the final product to be manufactured. For example, a TFT substrate can be manufactured by forming a thin film transistor and a storage capacitor by the following processes, but the present invention is not limited to this.

-Gate electrode and lower electrode of storage capacitor-
As shown in FIG. 6, a conductive layer made of Mo or the like is formed on the exposed glass surface by removing the water-soluble polymer layer 20 from the composite film 100 by sputtering, and then the gate electrode of the TFT is formed by photolithography and etching. 60 and the lower electrode 70 of the storage capacitor (capacitor) are patterned.
As a material constituting these electrodes 60 and 70, in addition to Mo, for example, metals such as Al, Cr, Ta, Ti, Au, and Ag, alloys such as Al—Nd and APC, tin oxide, zinc oxide, and oxide Examples thereof include metal oxide conductive films such as indium, indium tin oxide (ITO), and zinc indium oxide (IZO), organic conductive compounds such as polyaniline, polythiophene, and polypyrrole, or a mixture thereof.

  As a method for forming the gate electrode 60 and the lower electrode 70, for example, a wet method such as a printing method and a coating method, a physical method such as a vacuum deposition method, a sputtering method, and an ion plating method, a chemical method such as a CVD method and a plasma CVD method. After film formation is performed according to a method appropriately selected in consideration of suitability with a material to be used among other methods, patterning is performed by a photolithography method and an etching method. Alternatively, the electrodes 60 and 70 may be formed by a lift-off method, a method using a shadow mask, or the like.

  Although the thickness of the gate electrode 60 and the lower electrode 70 depends on the constituent material, for example, the thickness of the gate electrode 60 and the lower electrode 70 is set to 10 nm or more from the viewpoint of lowering the resistance of the gate wiring and preventing the delay of the TFT control signal. From the viewpoint of preventing breakage by reducing the level difference of each layer to be formed, the thickness is set to 1000 nm or less.

-Insulation layer-
Next, an insulating layer 62 that also serves as a gate insulating film of the TFT and a dielectric layer of the capacitor is formed.
The insulating layer 62 is made of an insulator such as SiO ₂ , SiN _x , SiON, Al ₂ O ₃ , Y ₂ O ₃ , Ta ₂ O ₅ , HfO ₂ , and may be an insulating layer containing two or more of these compounds. Good. Alternatively, a polymer insulator such as polyimide may be used.

  The insulating layer 62 is used from, for example, a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method, or an ion plating method, or a chemical method such as CVD or plasma CVD method. The film is formed according to a method appropriately selected in consideration of suitability for the material to be used. If necessary, patterning may be performed into a predetermined shape by a photolithography method, a method using a shadow mask, or the like.

  The insulating layer 62 needs to have a thickness for suppressing leakage current and improving the voltage resistance. On the other hand, if the insulating layer 62 is too thick, the driving voltage is increased. Although depending on the material of the insulating layer 62, the thickness of the insulating layer 62 is, for example, 50 nm or more and 1000 nm or less in the case of an inorganic insulator from the viewpoint of the time required for film formation and the voltage resistance. If it is 0.5 μm or more and 5 μm or less.

-Active layer-
Next, an active layer (channel layer) 64 is formed. The active layer 64 is made of a material selected from amorphous silicon, polycrystalline silicon, oxide semiconductor, and the like. Since the support substrate according to the present embodiment is composed of the glass film 10 and the water-insoluble polymer layer 30, the support substrate is superior in heat resistance to the support substrate made of only the resin film, but is formed of amorphous silicon or polycrystalline silicon. Requires a high temperature process, and the water-insoluble polymer layer 30 may be deformed when heated to a high temperature. Therefore, it is preferable to form the active layer 64 with an amorphous oxide semiconductor that can be formed at a low temperature by sputtering.

Specifically, an oxide containing at least one of In, Ga, and Zn (for example, In—O-based) is preferable, and an oxide containing at least two of In, Ga, and Zn (for example, In—Zn). -O-based, In-Ga-based, and Ga-Zn-O-based) are more preferable, and an oxide containing In, Ga, and Zn is particularly preferable. As the In—Ga—Zn—O-based amorphous oxide, an amorphous oxide whose composition in a crystalline state is represented by InGaO ₃ (ZnO) _m (m is a natural number less than 6) is preferable, and InGaZnO is particularly preferable. ₄ is more preferable. An amorphous oxide semiconductor having this composition tends to increase in electron mobility as the electrical conductivity increases. The electrical conductivity can be controlled by, for example, the oxygen partial pressure during film formation.

IGZO-based oxide semiconductor layer is a carrier is an electron in the n-type _{semiconductor,} be a p-type oxide semiconductors such as _{ZnO · Rh 2 O 3, CuGaO} 2, SrCu 2 O 2 in the active layer 64 Alternatively, an oxide semiconductor disclosed in JP 2006-165529 A may be used.

The thickness of the active layer 64 is, for example, 5 nm or more and 150 nm or less from the viewpoint that the drain current flows sufficiently and the time required for film formation is not excessively long.
The electrical conductivity of the active layer 64 is preferably 10 ⁻⁴ Scm ⁻¹ or more and less than 10 ² Scm ⁻¹ in order to function as a channel layer, and is preferably 10 ⁻¹ Scm ⁻¹ or more and less than 10 ² Scm ^−1. It is more preferable that

For example, when an amorphous IGZO layer is formed as the active layer 64, a film is formed using a vapor phase film formation method using a polycrystalline sintered body of an oxide semiconductor containing In, Ga, and Zn in a target composition. To do. Among the vapor phase film forming methods, the sputtering method and the pulse laser deposition method (PLD method) are more preferable, and the sputtering method is particularly preferable from the viewpoint of mass productivity.
After film formation, patterning is performed by photolithography and etching. Alternatively, the active layer 64 may be formed by a lift-off method, a method using a shadow mask, or the like.

  Note that the formed film can be confirmed to be an amorphous film by an X-ray diffraction method. The film thickness can be determined by stylus surface shape measurement. The composition ratio can be determined by fluorescent X-ray analysis. The optical band gap can be obtained using a spectrophotometer. Furthermore, the electrical conductivity can be determined using a resistivity meter.

-Source electrode, drain electrode, and upper electrode of storage capacitor-
The source electrode 66A and the drain electrode 66B are formed so as to be in contact with the active layer 64 and to be separated from each other. By applying a voltage to the gate electrode 60, the current flowing between the source / drain electrodes 66A and 66B via the active layer 64 is controlled. In addition to the source / drain electrodes 66A and 66B, an upper electrode 72 of a capacitor connected to the drain electrode 66B is formed.

  Examples of the material constituting the source / drain electrodes 66A and 66B and the upper electrode 72 include metals such as Al, Mo, Cr, Ta, Ti, Au, and Ag, alloys such as Al—Nd, Mo—Nb, and APC, Examples thereof include metal oxide conductive films such as tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), and indium zinc oxide (IZO), organic conductive compounds such as polyaniline, polythiophene, and polypyrrole, or a mixture thereof.

  The method for forming the source / drain electrodes 66A, 66B and the upper electrode 72 is not particularly limited, and is a wet method such as a printing method or a coating method, a physical method such as a vacuum deposition method, a sputtering method or an ion plating method, CVD, plasma. A film is formed according to a method selected in consideration of suitability with a material from a chemical method such as a CVD method, and then patterned by a photolithography method and an etching method. Alternatively, the source / drain electrodes 66A and 66B and the upper electrode 72 may be formed by a lift-off method, a method using a shadow mask, or the like.

  For example, when ITO is selected as the material of the source / drain electrodes 66A and 66B and the upper electrode 72, the film can be formed according to a direct current or high frequency sputtering method, a vacuum deposition method, an ion plating method, etc. When a compound is selected, it can be performed according to a wet film forming method.

The thicknesses of the source / drain electrodes 66A and 66B and the upper electrode 72 are, for example, 10 nm or more and 1000 nm or less from the viewpoint of film forming properties, conductivity (reduction in resistance), etc., depending on the constituent materials.
By forming the source / drain electrodes 66A, 66B and the upper electrode 72, TFTs and capacitors are manufactured.

Thus, a TFT substrate is manufactured by producing TFTs and capacitors on the glass surface of the composite film. The TFT substrate manufactured in this way is lightweight and robust, and transportation and storage costs can be kept low. On the other hand, since the TFT is formed on a glass film in which dirt and scratches are prevented until just before the production of the TFT, the reliability is high.
In general, the substrate is cleaned before manufacturing the TFT. However, when the composite film according to the present invention is used, the water-soluble polymer layer can be easily removed by cleaning with water or the like. A new process such as a process is not required, and a decrease in productivity and an increase in manufacturing cost can be suppressed.

  The TFT substrate manufactured according to the present invention may be used to manufacture an organic EL display device by sequentially forming, for example, an interlayer insulating film 68, an organic EL element, etc., depending on the final product. A radiation imaging apparatus in which a conversion layer (a charge generation layer, a charge transport layer), a bias electrode, a phosphor layer, and the like are stacked may be manufactured.

In the above embodiment, the case of manufacturing a bottom gate type TFT in which the gate electrode 60 is formed on the glass surface has been described. However, the present invention is not limited to this. For example, the active layer and the source / drain electrodes are formed on the glass surface. A top gate TFT formed in the order of the insulating layer and the gate electrode may be manufactured.
The TFT is generally divided into a bottom contact type and a top contact type in the order in which the active layer and the source / drain electrodes are formed. That is, the source / drain electrodes may be formed before the active layer and the lower surface of the active layer may be in contact with the source / drain electrodes (bottom contact type), or the active layer may be formed before the source / drain electrodes. It is good also as a form (top contact type) which forms and the upper surface of an active layer contacts a source / drain electrode.

Hereinafter, examples will be described, but the present invention is not limited thereto.
<Example 1>
-Production process of composite film-
A roll of a thin glass film (manufactured by Nippon Electric Glass Co., Ltd.) having a thickness of 50 μm and a width of 200 mm was prepared.
A glass film is pulled out from the glass roll, and a solution obtained by dissolving 100 parts by mass of PVA205C (manufactured by Kuraray Co., Ltd.) in 15 parts by mass of a solvent (H ₂ O / ethanol = 1: 1) Was applied to the entire surface. Subsequently, it dried at 120 degreeC for 30 minutes. As a result, a water-soluble polymer layer was formed on one side of the glass film.

Next, a PEN film (thickness: 100 μm) was bonded as a water-insoluble polymer layer to the opposite surface of the glass film with a heat roll (temperature: 100 ° C.) through an acrylic adhesive. This produced the composite film which has the structure of PVA / glass film / PEN.
The composite film obtained as described above was wound up in a roll state. At this time, the water-soluble PVA membrane and the water-insoluble PEN surface were in direct contact.

  The composite film was unwound from the composite film roll and cut sequentially into a size of 50 mm × 50 mm.

-Manufacture of electronic components-
The obtained composite film was washed with pure water (running water) to remove the PVA membrane.
After the PVA film was removed and Mo (thickness 40 nm) was formed on the exposed glass surface by sputtering, patterning was performed by photolithography and wet etching to form a gate electrode and a lower electrode of the storage capacitor.
SiO ₂ (thickness 200 nm) was formed by sputtering to form a gate insulating layer and a dielectric layer of a storage capacitor.

  After sputter deposition of IZO (thickness 200 nm) without introducing oxygen, patterning was performed by photolithography and wet etching to form a source / drain electrode and an upper electrode of a storage capacitor.

IGZO (thickness 10 nm) was formed by sputtering and then patterned by photolithography and wet etching to form an active layer.
Amorphous Ga ₂ O ₃ (thickness 10 nm) was formed by sputtering, and only the region covering the active layer was left by photolithography and wet etching to form a protective layer for the active layer.

An acrylic resin was applied to form an interlayer insulating film, and a contact hole was formed on the upper electrode of the storage capacitor.
After depositing IZO (thickness: 200 nm), patterning was performed by photolithography and wet etching to form a charge collection electrode (pixel electrode). Thereby, a TFT substrate was obtained.

An alcohol-soluble copolymer nylon resin was applied to the surface of the TFT substrate so as to have a film thickness of 0.1 μm to form an undercoat layer.
A charge generation layer coating solution was prepared by adding and dispersing dibromoanthanthrone pigment and polyvinyl butyral resin in cyclohexanone, and applying and drying by spin coating to form a charge generation layer having a thickness of 0.1 μm.
N, N′-diphenyl-N, N′-bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine represented by the following structural formula (I) is used as a charge transport material. Used, 5 g of the charge transport material and 5 g of polycarbonate (molecular weight: about 35000 to 40000) were dissolved in 35 g of methylene chloride, and applied and dried on the charge generation layer by dip coating to form a charge transport layer. After drying at 100 ° C. for 1 hour, the thickness of the charge transport layer was measured to be 2 μm.

  As the upper bias electrode, an Au electrode (thickness 0.05 nm) was formed by resistance heating vapor deposition.

Prepare a substrate on which a PET film (thickness 200 μm) is provided with a Ga ₂ O ₂ S: Tb scintillator (thickness 230 μm, manufactured by Kasei Optonics), and double-sided adhesive tape so that the upper bias electrode and the scintillator layer face each other Pasted through.
This produced the built-in dose monitor of the radiation imaging device (cassette DR). This radiation imaging apparatus showed a good photoelectric conversion characteristic with little dark current due to pinholes.

As mentioned above, although this invention was demonstrated, this invention is not limited to the said embodiment and Example. For example, the use of the composite film according to the present invention is not limited to the manufacture of an organic EL display device or a radiation imaging device, but may be applied to the manufacture of other electronic devices such as a liquid crystal display device and a plasma display device. The manufacture of the EL display device is not limited to the active matrix type in which the TFT is formed, but may be applied to the manufacture of a passive matrix type organic EL display device or an organic EL light emitting device as a lighting device.
Moreover, when manufacturing a radiation imaging device, you may apply not only to the indirect type | mold provided with the fluorescent substance layer and the organic photoelectric converting layer but to the direct conversion type | mold manufacturing provided with the fluorescent substance layer.

DESCRIPTION OF SYMBOLS 10 Glass film 10A Glass film roll 20 Water-soluble polymer layer 24 Drying means 30 Water-insoluble polymer layer 34 Drying means 40A, 40B Transport roller 50 Composite film roll 60 Gate electrode 62 Insulating layer 64 Active layer 66A Source electrode 66B Drain electrode 68 Interlayer Insulating film 70 Lower electrode 72 Upper electrode 100 Composite film 100A, 100B, 100C Composite film

Claims (4)

A glass film having a thickness of 50 to 200 μm ;
A water-soluble polymer layer provided on one surface of the glass film to protect the glass film and having an alkali ion content of 150 ppm or less composed of polyvinyl alcohol;
A water-insoluble polymer layer provided on the other surface of the glass film and supporting the glass film , the water-insoluble polymer being formed of at least one selected from polyethylene terephthalate, polybutylene phthalate and polyethylene naphthalate ; ,
A composite film having The composite film according to claim 1, wherein a water contact angle of the water-insoluble polymer layer is 70 degrees or more. Preparing a continuous band-shaped glass film having a thickness of 50 to 200 μm ;
Protecting the glass film on one surface of the glass film and forming a water-soluble polymer layer having an alkali ion content of 150 ppm or less composed of polyvinyl alcohol;
On the other surface of the glass film, a water-insoluble polymer layer is formed which supports the glass film and the water-insoluble polymer is formed of at least one selected from polyethylene terephthalate, polybutylene phthalate and polyethylene naphthalate. Process,
Cutting the band-shaped glass film formed with the water-soluble polymer layer and the water-insoluble polymer layer to produce a composite film;
Dissolving the water-soluble polymer layer with water or an aqueous solution and removing it from the composite film;
Forming an electronic component on the surface of the glass film exposed by removing the water-soluble polymer layer from the composite film;
The manufacturing method of the electronic component which has this. Between the step of producing the composite film and the step of forming the electronic component,
A plurality of composite films prepared by cutting the band-shaped glass film on which the water-soluble polymer layer and the water-insoluble polymer layer are formed, so that the water-soluble polymer layer and the water-insoluble polymer layer face each other. Step by step,
Separating each of the stacked composite films, and
The manufacturing method of the electronic component of Claim 3 which has these.

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