JP5371164B2 - Bidirectional two-terminal thyristor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surge protection element in which the surge withstand strength is improved. SOLUTION: A first n-type conductive region 2 and a second n-type conductive region 3 are formed on a p-type semiconductor substrate 1. First p-type conductive regions 4, 5, and 6 having hole-like conductive regions 12, 13, and 14, respectively, are formed in the first n-type conductive region 2 in point symmetry, and second p-type conductive regions 7, 8, and 9 having hole-like conductive regions 15, 16, and 17, respectively, are formed in the second n-type conductive region 3 in point symmetry. The first p-type conductive regions 4, 5, and 6 and the second p-type conductive regions 7, 8, and 9 overlap each other with their end parts in plan view. With this structure, the variation in base width of unit thyristors becomes less, so that the unit thyristor regions are easy to fire simultaneously for easy splitting the surge current, resulting in improved surge withstand strength.

Description

Field of Invention

  The present invention relates to a thyristor, and more particularly to a bidirectional two-terminal thyristor used for a surge protection element for protecting an electronic circuit system from an abnormal voltage or current.

  Bidirectional two-terminal thyristors are widely used in the communication industry and the like as surge protection elements that protect electronic circuits from abnormal voltages and currents generated in communication lines such as telephone lines.

  FIG. 2 is a cross-sectional view showing a bidirectional two-terminal thyristor according to the prior art. In FIG. 2, 1 is a semiconductor substrate, 2 is a first N-type conductive region, 3 is a second N-type conductive region, 4 is a first P-type conductive region, 7 is a second P-type conductive region, 10 is a first electrode, and 11 is a first electrode. Two electrodes 51 have a PNPN structure. FIG. 4 is an equivalent circuit diagram of a bidirectional two-terminal thyristor according to the prior art.

  The semiconductor substrate 1 has a P-type conductivity type. The first N-type conductive region 2 and the second N-type conductive region 3 have an N-type conductivity type formed by impurity diffusion inside the semiconductor substrate 1. The first P-type conductive region 4 and the second P-type conductive region 7 have a P-type conductivity type formed by impurity diffusion inside the semiconductor substrate 1. The first electrode 10 and the second electrode 11 are electrodes formed on both main surfaces of the semiconductor substrate 1. Here, the electrode 10 is electrically connected to both the first N-type conductive region 2 and the first P-type conductive region 4. In addition, the second electrode 11 is electrically connected to both the second N-type conductive region 3 and the second P-type conductive region 7, but the entire electrical characteristics viewed from the electrodes 10 and 11 are the same. In general, the structure is point-symmetric. An equivalent circuit diagram of the bidirectional two-terminal thyristor shown in FIG. 2 is as shown in FIG.

  In the bidirectional two-terminal thyristor, the voltage application direction in which the upper surface side where the first N-type conductive region 2 is provided is positive with respect to the lower surface side where the second N-type conductive region 3 is provided is forward. The voltage application direction in which the upper surface side is a negative potential with respect to the lower surface side is the reverse direction. FIG. 3 is a graph showing electrical characteristics in the forward direction of a bidirectional two-terminal thyristor according to the prior art. As shown in FIG. 3, in the forward direction, a PNP transistor having the first P-type conductive region 4 as an emitter, the first N-type conductive region 2 as a base, and the semiconductor substrate 1 as a collector, and a second N-type conductive region 3 as an emitter, Electrons and holes are exchanged between NPN transistors having the semiconductor substrate 1 as a base and the first N-type conductive region 2 as a collector, and an ignition operation for shifting from an off state to an on state is performed.

  That is, in the PNPN structure 51 of FIG. 2 that was initially in the OFF state, when the voltage applied to the two-terminal electrode region reaches the breakover voltage Vb, the N-type is in a reverse bias state due to avalanche breakdown or punch-through. Electrons and holes are actively exchanged at the boundary between the conductive region 2 and the P-type semiconductor substrate and in the vicinity of the boundary. Since the base of the PNP transistor and the collector of the NPN transistor are the common first N-type conductive region 2, the thyristor having the PNPN structure is ignited and transitions to the on state. Since the structure is symmetrical vertically, the same operation is performed in the reverse direction.

  Since it is a well-known fact that the thyristor having the PNPN structure is ignited and shifts from the off state to the on state, a detailed description of the internal operation is omitted here.

  As described above, the thyristor that performs the ignition operation as described above suppresses the surge voltage by the breakover voltage Vb, but the response to other electrical surges such as a lightning induced surge is much faster than other surges. Because it is very fast compared to protective elements such as lightning arresters and metal oxide varistors, it is mostly used in places where lightning-induced surges are easily picked up, such as electronic devices in communication networks that require high reliability. Is in a situation.

  In addition, since it is made of a semiconductor substrate, it has a great maintenance advantage that it can maintain reliability over a long period without being consumed by a surge current.

  However, even in a bidirectional type two-terminal thyristor having such advantages, it is not possible to suppress the surge voltage for any electrical surge. However, there is a limit in nature, and it is impossible to respond to the surge fast enough, current concentration occurs in the element, and the temperature locally rises, and the element may melt and break down.

  Therefore, as one of countermeasures against a surge with a large time change, there is a thyristor by the inventors of the present invention. FIG. 5 is a cross-sectional view showing an outline of a bidirectional two-terminal thyristor by the present inventors. In FIG. 5, 1 is a semiconductor substrate, 2 is a first N-type conductive region, 3 is a second N-type conductive region, 4, 5 and 6 are first P-type conductive regions, and 7, 8 and 9 are second P-type conductive regions. Is a first electrode, 11 is a second electrode, 18, 19, 20, and 21 are insulators, and 52 is a PNPN structure. FIG. 6 is an equivalent circuit diagram of a unit thyristor structure in the bidirectional two-terminal thyristor shown in FIG.

  As shown in FIG. 5, the P-type conductive regions on the upper surface side and the lower surface side are formed separately, and the upper surface side and lower surface side emitters are overlapped when viewed in plan. With this configuration, unit thyristors shown in the circuit model of FIG. 6 are formed in parallel, and a surge current is shunted to each unit thyristor to suppress an increase in internal temperature. According to experiments, it has been confirmed that with four unit thyristors, the surge resistance is improved by 30% or more compared to the thyristor having the conventional structure as shown in FIG.

  However, in the above structure, although each unit thyristor is more easily ignited than that of the conventional structure shown in FIG. Is concentrated on one unit thyristor and the unit thyristor is ignited, the current is concentrated on the thyristor even after the ignition, so the current is not shunted to the remaining unit thyristors, and surge resistance is not necessarily expected. The problem remains that it may not be large enough.

Problems to be solved by the invention

  The present invention further improves the conventional structure shown in FIG. 5 and ignites all unit thyristors formed in the structure as simultaneously as possible to prevent current from concentrating on some unit thyristors. The purpose is to increase the surge resistance.

Means for solving the problem

[Means for Solving the Problems]
As means for solving the above-mentioned problems, the present invention provides an N- type first conductive region formed on a P-type semiconductor substrate so as to be exposed on one surface of the semiconductor substrate, and the one surface. N type (N ≧ 2) P- type second conductive regions opposite to the first conductive regions formed by being exposed to the first conductive region and arranged in the first conductive region, N- type first hole-conducting conductors that are opposite to the N second conductive regions that are formed so as to be exposed on the surfaces of the N- type and penetrate through the N second conductive regions, respectively. An N- type third conductive region formed exposed on the other surface opposite to the one surface of the semiconductor substrate, the third conductive region exposed on the other surface, and the third A P- type fourth conductive region opposite to the N first conductive regions arranged in the conductive region; The N- type second electrode is formed so as to be exposed on the other surface and is opposite to the N fourth conductive regions formed so as to penetrate each of the N fourth conductive regions. The second conductive region and the fourth conductive region have a hole-shaped conductive region, and are alternately arranged at equal intervals in a plan view, and are formed in the same shape and the same area. The second conductive region is arranged so that the end portion on the side close to the second conductive region in the plan view and the vicinity thereof overlap the first fourth conductive region in plan view. The Nth fourth conductive region has an end portion on the side close to the (N-1) th fourth conductive region and a portion near the Nth fourth conductive region in plan view and the Nth second conductive region. The second conductive regions other than the first, which are arranged so as to overlap with each other, have both ends thereof in plan view. And the vicinity thereof are arranged so as to overlap the N fourth conductive regions, and the fourth conductive regions other than the Nth are arranged in such a manner that both ends thereof and the vicinity thereof are N The second conductive regions are arranged so as to overlap each other.

  In the configuration described above, in order to compensate for the decrease in the base ground current amplification factor α without changing the breakover voltage, the first conductive region and the semiconductor substrate, and the third conductive region and the semiconductor substrate The emitter of the second conductive region and the fourth conductive region must be deepened without changing the bonding surface. For this reason, the diffusion time of the emitter becomes longer, but the diffusion becomes harder as the diffusion depth becomes deeper. Therefore, the variation in the depth of the emitter is reduced and the variation in the base width is reduced. Furthermore, the first hole-shaped conductive region and the second hole are provided in the second conductive region and the fourth conductive region, respectively, so that a certain holding current value (IH) is secured even when the emitter is deepened. A conductive region was formed. Therefore, the variation in the characteristics of each unit thyristor is reduced, and all the unit thyristors are easily fired simultaneously. Therefore, the surge current can be easily shunted to all the unit thyristors and the surge resistance can be improved.

  Further, in the above structure, the holes of the second conductive region and the holes of the fourth conductive region are formed so that the N second conductive regions and the N fourth conductive regions are viewed in a plan view. It can also be provided in areas that overlap. In that case, the first hole-shaped conductive region and the second hole-shaped conductive region can be arranged so as not to overlap each other when seen in a plan view.

  Hereinafter, a bidirectional two-terminal thyristor according to a first embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a sectional view showing a bidirectional two-terminal thyristor according to a first embodiment of the present invention. In FIG. 1, 1 is a semiconductor substrate, 2 is a first N-type conductive region, 3 is a second N-type conductive region, 4, 5 and 6 are first P-type conductive regions, 7, 8 and 9 are second P-type conductive regions, 10 Is a first electrode, 11 is a second electrode, 12, 13, 14, 15, 16, and 17 are hole-shaped conductive regions, 18, 19, 20, and 21 are insulators, and 53 is a PNPN structure.

  As shown in FIG. 1, the bidirectional two-terminal thyristor according to the first embodiment of the present invention is formed so that the electrical characteristics are symmetrical in both directions. That is, the first N-type conductive region 2 and the second N-type conductive region 3 are formed on the P-type semiconductor substrate 1. Further, three first P-type conductive regions 4, 5, 6 in the first N-type conductive region 2, and three second P-type conductive regions 7, 8, 9 in the second N-type conductive region 3 are opposed to each other. It is formed so as to be point-symmetric with the region and at equal intervals. Further, the first P-type conductive region 4 is arranged so that the end portion on the side close to the first P-type conductive region 5 and the vicinity thereof are overlapped with the second P-type conductive region 7 in plan view. Further, the second P-type conductive region 9 is arranged so that the end portion on the side close to the second P-type conductive region 8 and the vicinity thereof overlap the first P-type conductive region 6 when viewed in plan. In addition, the first P-type conductive regions 5 and 6 and the second P-type conductive regions 7 and 8 are viewed in plan view so that their both ends and their neighboring portions overlap with the opposing P-type conductive regions, respectively. Deploy. Further, the hole-shaped conductive areas 12, 13, and 14 are formed in the first P-type conductive areas 4, 5, and 6, and the hole-shaped conductive areas 15, 16, and 17 are formed in the second P-type conductive areas 7, 8, and 9 in the same manner. . The first electrode on the upper surface side is formed in the first P-type conductive region and the first N-type conductive region, and the second electrode on the lower surface side is in contact with the second P-type conductive region and the second N-type conductive region. It is formed and configured as follows.

  The first P-type conductive regions 4, 5, 6 and the second P-type conductive regions 7, 8, 9 are all formed in the same shape and the same area in order to make the characteristics of the unit thyristor uniform. preferable. Similarly, the hole-shaped conductive areas 12, 13, and 14 of the first P-type conductive areas 4, 5, and 6 and the hole-shaped conductive areas 15, 16, and 17 of the second P-type conductive areas 7, 8, and 9 have the same shape. It is preferable to form in the same area. The overlapping width of the first P-type conductive regions 4, 5, 6 and the second P-type conductive regions 7, 8, 9 may be 25 μm overlapping with the mask width of 250 μm in the case of a 2.6 mm chip, for example. It has been confirmed that the surge resistance is improved by 30% or more. When the overlap becomes large, the region where the on-current flows is narrowed, so it is necessary to make it less than 50% of the mask width. Therefore, these overlap widths cannot be made very large, but can be changed to an appropriate overlap width depending on the type of surge. The hole-shaped conductive areas 12, 13, and 14 of the first P-type conductive areas 4, 5, and 6 and the hole-shaped conductive areas 15, 16, and 17 of the second P-type conductive areas 7, 8, and 9 5 and 6 can be easily formed by drawing a hole-shaped conductive region on the pattern of the photographic mask for forming 5 and 6 and the pattern of the photographic mask for forming the second P-type conductive regions 7, 8, 9. There is no problem even if formed by.

  In the structure shown in FIG. 1, it is necessary to make the base width of the thyristor structure as a unit greatly different from the structure shown in FIG. 5 in order to prevent the holding current that is important in the surge protection element from changing. . That is, in the structure shown in FIG. 1, since the breakover voltage changes when the base depth is changed, the emitter is diffused deeply to reduce the base width so that the holding current does not change. As the impurity diffusion becomes deeper, the diffusion is less likely to occur and the variation becomes smaller. Therefore, in the structure shown in FIG. 1, the variation in the base width of each unit thyristor is reduced and the variation in characteristics can be reduced. In addition, since the hole-shaped conductive region is formed, a certain holding current value (IH) can be secured even if the emitter is deepened.

  Therefore, in the structure according to the first embodiment of the present invention, the characteristics of each unit thyristor are easily aligned, and each unit thyristor is easily fired at the same time, making it difficult for current to concentrate on some unit thyristors. This means that the current shunt can be brought close to the ideal state, heat generation leading to element destruction can be suppressed, and surge resistance can be improved.

An equivalent circuit model having the structure shown in FIG. 1 is shown in FIG. FIG. 7 is an equivalent circuit diagram of the bidirectional two-terminal thyristor shown in FIG. In the bidirectional two-terminal thyristor according to the first embodiment of the present invention, the base ground current amplification factors α _{± 1} ¹ , α _{± 1} ² , and α _{± 1} ³ of the PNP transistor do not completely match. However, since variations in the base width are reduced, variations in the base ground current amplification factors α _{± 1} ¹ , α _{± 1} ² , and α _{± 1} ³ are small compared to the conventional structure. Since it becomes difficult for current to concentrate on some unit thyristors, surge resistance can be improved.

  In the structure shown in FIG. 1, the first P-type conductive regions 4, 5, 6 and the second P-type conductive regions 7, 8, 9 are always overlapped in plan view even if there are manufacturing variations. By designing the mask pattern with a margin, the first P-type conductive regions 4, 5, 6 and the second P-type conductive regions 7, 8, 9 are viewed in plan in some thyristor regions due to manufacturing variations. Make sure they overlap. When the first P-type conductive regions 4, 5, 6 and the second P-type conductive regions 7, 8, 9 are formed by thermal diffusion, impurity diffusion also occurs in the lateral direction perpendicular to the depth direction. There is a limit to the size.

  Further, a bidirectional two-terminal thyristor according to a second embodiment of the present invention will be described in detail based on the drawings. FIG. 8 is a sectional view showing a bidirectional two-terminal thyristor according to the second embodiment of the present invention. In FIG. 8, 1 is a semiconductor substrate, 2 is a first N-type conductive region, 3 is a second N-type conductive region, 4, 5 and 6 are first P-type conductive regions, 7, 8, and 9 are second P-type conductive regions, 10 Is a first electrode, 11 is a second electrode, 18, 19, 20, and 21 are insulators, 22, 23, 24, 25, 26, 27, 28, 29, 30, and 31 are porous conductive regions, and 54 is a PNPN Structure.

  In the bidirectional two-terminal thyristor according to the second embodiment of the present invention, in addition to the configuration of the bidirectional two-terminal thyristor according to the first embodiment, the hole-shaped conductive region is a first P-type. The conductive regions 4, 5, 6 and the second P-type conductive regions 7, 8, 9 are provided so as to overlap in plan view, and the hole-shaped conductive regions 22, 23, 24, 25, 26 and the hole-shaped conductive regions are provided. The regions 27, 28, 29, 30, and 31 are arranged so as not to overlap each other when seen in a plan view.

  In the bidirectional two-terminal thyristor, the surge current flowing through the first N-type conductive region 2 and the second N-type conductive region 3 passes through a path for lowering the base potential of the unit thyristor, and the unit thyristor is likely to be ignited. , Surge resistance can be increased. Further, as shown in the bidirectional two-terminal thyristor, the number of hole-shaped conductive regions can be made larger than that of the P-type conductive region that is an emitter.

  Further, a bidirectional two-terminal thyristor according to a third embodiment of the present invention will be described in detail based on the drawings. FIG. 9 is a sectional view showing a bidirectional two-terminal thyristor according to a third embodiment of the present invention. In FIG. 9, 1 is a semiconductor substrate, 2 is a first N-type conductive region, 3 is a second N-type conductive region, 4, 5 and 6 are first P-type conductive regions, 7, 8 and 9 are second P-type conductive regions, 10 Is a first electrode, 11 is a second electrode, 18, 19, 20, and 21 are insulators, 22, 23, 24, 25, 26, 27, 28, 29, 30, and 31 are hole conductive regions, and 32 and 33 , 34 are first resistors, 35, 36, 37 are second resistors, and 55 is a PNPN structure.

  In the bidirectional two-terminal thyristor according to the third embodiment of the present invention, in addition to the configuration of the bidirectional two-terminal thyristor according to the first embodiment, the semiconductor substrate 1 and the first electrode 10 are provided. And the first resistors 32, 33, and 34 and the second resistors 35, 36, and 37, which are contact resistances between the semiconductor substrate 1 and the second electrode 11, are formed.

  In the bidirectional two-terminal thyristor, the first resistors 32, 33, 34 and the second added between the semiconductor substrate 1 and the first electrode 10 and between the semiconductor substrate 1 and the second electrode 11 are used. Resistors 35, 36, and 37 are each inserted in series with the emitter. Therefore, in the structure according to the first embodiment of the present invention, even when current is concentrated on some unit thyristors, the base potential of the unit thyristor rises and other unit thyristors are easily ignited. It is difficult for current to concentrate on the unit thyristor. This means that the current shunt can be brought close to the ideal state, heat generation leading to element destruction can be suppressed, and surge resistance can be improved.

  In addition, a bidirectional two-terminal thyristor according to a fourth embodiment of the present invention will be described in detail with reference to the drawings. FIG. 10 is a sectional view showing a bidirectional two-terminal thyristor according to the fourth embodiment of the present invention. In FIG. 10, 1 is a semiconductor substrate, 2 is a first N-type conductive region, 3 is a second N-type conductive region, 4, 5 and 6 are first P-type conductive regions, and 7, 8 and 9 are second P-type conductive regions. Is a first electrode, 11 is a second electrode, 18, 19, 20, and 21 are insulators, 22, 23, 24, 25, 26, 27, 28, 29, 30, and 31 are hole conductive regions, and 32 and 33 , 34 are first resistors, 35, 36, 37 are second resistors, 38, 39, 40 are third N-type conductive regions, 41, 42, 43 are fourth N-type conductive regions, and 56 is a PNPN structure.

  In the bidirectional two-terminal thyristor, the contact resistances between the semiconductor substrate 1 and the first electrode 10 and between the semiconductor substrate 1 and the second electrode 11 are the third N-type conductive regions 38, 39, and 40, respectively. The presence of the fourth N-type conductive regions 41, 42, 43 is reduced. Therefore, the current required for the ignition operation can easily flow, and the on-voltage after ignition can be reduced while preventing the current from concentrating on some unit thyristors. As a result, electrical loss, that is, generation of heat leading to destruction can be reduced, and surge resistance can be further improved.

Effect of the invention

Thus, according to the present invention, the emitter composed of the second conductive region and the fourth conductive region is formed deeply, and the first hole-shaped conductive region and the fourth conductive region are respectively formed in the second conductive region and the fourth conductive region. By forming the second hole-shaped conductive region, the variation in the characteristics of the plurality of unit thyristors is reduced, and it is easy to prevent current concentration in some unit thyristors. It is easy to stabilize the parallel operation of thyristors. Moreover, when a surge is input, it is easy to suppress heat generation, and the surge resistance can be improved as compared with the thyristor according to the prior art. In addition, since the manufacturing variation is less likely to be reflected in the structure, simultaneous firing is easier than in the thyristor according to the related art.

  1 is a cross-sectional view showing a bidirectional two-terminal thyristor according to a first embodiment of the present invention.   It is sectional drawing which shows the bidirectional | two-way type two-terminal thyristor based on a prior art.   It is a graph which shows the electrical property of the forward direction of the bidirectional | two-way type | mold two terminal thyristor which concerns on a prior art.   It is an equivalent circuit diagram of a bidirectional two-terminal thyristor according to the prior art.   It is sectional drawing which shows the outline of the bidirectional | two-way type two-terminal thyristor by the inventors of this case.   FIG. 6 is an equivalent circuit diagram of a unit thyristor structure in the bidirectional two-terminal thyristor shown in FIG. 5.   FIG. 2 is an equivalent circuit diagram of the bidirectional two-terminal thyristor shown in FIG. 1.   It is sectional drawing which shows the bidirectional | two-way type two-terminal thyristor which concerns on the 2nd Embodiment of this invention.   It is sectional drawing which shows the bidirectional | two-way type two terminal thyristor which concerns on the 3rd Embodiment of this invention.   It is sectional drawing which shows the bidirectional | two-way type 2 terminal thyristor which concerns on the 4th Embodiment of this invention.

Brief description of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 1st N-type conductive area 3 2nd N-type conductive area 4 1st P-type conductive area 5 1st P-type conductive area 6 1st P-type conductive area 7 2nd P-type conductive area 8 2nd P-type conductive area 9 2nd P-type conductive Region 10 First electrode 11 Second electrode 12 Hole conductive region 13 Hole conductive region 14 Hole conductive region 15 Hole conductive region 16 Hole conductive region 17 Hole conductive region 18 Insulator 19 Insulator 20 Insulator 21 Insulation Body 22 Hole-shaped conductive area 23 Hole-shaped conductive area 24 Hole-shaped conductive area 25 Hole-shaped conductive area 26 Hole-shaped conductive area 27 Hole-shaped conductive area 28 Hole-shaped conductive area 29 Hole-shaped conductive area 30 Hole-shaped conductive area 31 Hole-shaped conductive area Region 32 First resistor 33 First resistor 34 First resistor 35 Second resistor 36 Second resistor 37 Second resistor 38 Third N-type conductive region 39 Third N-type conductive region 40 Third N-type conductor Electrical region 41 4th N-type conductive region 42 4th N-type conductive region 43 4th N-type conductive region 51 PNPN structure 52 PNPN structure 53 PNPN structure 54 PNPN structure 55 PNPN structure 56 PNPN structure

Claims (3)

On a P-type semiconductor substrate,
An N- type first conductive region formed by being exposed on one surface of the semiconductor substrate ;
N type (N ≧ 2) P- type second conductive regions opposite to N- type first conductive regions formed by being exposed on the one surface and arranged in the first conductive region When,
An N- type first hole which is formed to be exposed on the one surface and which is formed so as to penetrate each of the N second conductive regions, and which is opposite to the N second conductive regions. A conductive region;
An N- type third conductive region formed to be exposed on the other surface facing away from the one surface of the semiconductor substrate ;
A P- type fourth conductive region of the opposite type to the N first conductive regions formed to be exposed on the other surface and arranged in the third conductive region;
An N- type second hole which is formed to be exposed on the other surface and which is formed so as to penetrate each of the N fourth conductive regions. A conductive region,
The second conductive region and the fourth conductive region are alternately arranged at equal intervals in a plan view and are formed in the same shape and the same area.
The first second conductive region has the end portion on the side close to the second second conductive region in a plan view and the vicinity thereof in the fourth conductive region and the fourth conductive region. Arranged to overlap with a predetermined overlap width in the conductive region of
The Nth fourth conductive region has an end portion on the side close to the (N−1) th fourth conductive region and a portion near the Nth fourth conductive region in plan view and the second conductive region. Arranged to overlap with a predetermined overlap width in the second conductive region,
The second conductive regions other than the first have their both end portions and their neighboring portions in plan view overlapping with the N number of the fourth conductive regions and a predetermined overlap width in the fourth conductive regions. Arranged as
In the fourth conductive regions other than the Nth, both end portions and their neighboring portions in a plan view overlap with N second conductive regions with a predetermined overlap width in the second conductive regions. A bidirectional two-terminal thyristor characterized by being arranged as described above.
The first hole-shaped conductive region and the second hole-shaped conductive region are in a region where the N number of the second conductive regions and the N number of the fourth conductive regions overlap each other in plan view. The bidirectional two-terminal thyristor according to claim 1, wherein the bidirectional two-terminal thyristor is provided.
  3. The bidirectional two-terminal thyristor according to claim 2, wherein the first hole-shaped conductive region and the second hole-shaped conductive region are arranged so as not to overlap each other in plan view. .

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