JP5365033B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- JP5365033B2 JP5365033B2 JP2008062487A JP2008062487A JP5365033B2 JP 5365033 B2 JP5365033 B2 JP 5365033B2 JP 2008062487 A JP2008062487 A JP 2008062487A JP 2008062487 A JP2008062487 A JP 2008062487A JP 5365033 B2 JP5365033 B2 JP 5365033B2
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- 238000003384 imaging method Methods 0.000 title claims abstract description 42
- 239000010410 layer Substances 0.000 claims abstract description 173
- 238000009792 diffusion process Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 238000009825 accumulation Methods 0.000 claims abstract description 33
- 239000007769 metal material Substances 0.000 claims abstract description 23
- 239000012535 impurity Substances 0.000 claims abstract description 18
- 239000002344 surface layer Substances 0.000 claims abstract description 13
- 239000011810 insulating material Substances 0.000 claims abstract description 7
- 238000003860 storage Methods 0.000 claims description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- 229910052713 technetium Inorganic materials 0.000 claims description 2
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000000034 method Methods 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- UPEMFLOMQVFMCZ-UHFFFAOYSA-N [O--].[O--].[O--].[Pm+3].[Pm+3] Chemical compound [O--].[O--].[O--].[Pm+3].[Pm+3] UPEMFLOMQVFMCZ-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 1
- OWCYYNSBGXMRQN-UHFFFAOYSA-N holmium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ho+3].[Ho+3] OWCYYNSBGXMRQN-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910003443 lutetium oxide Inorganic materials 0.000 description 1
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- MPARYNQUYZOBJM-UHFFFAOYSA-N oxo(oxolutetiooxy)lutetium Chemical compound O=[Lu]O[Lu]=O MPARYNQUYZOBJM-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- XLROVYAPLOFLNU-UHFFFAOYSA-N protactinium atom Chemical compound [Pa] XLROVYAPLOFLNU-UHFFFAOYSA-N 0.000 description 1
- FKTOIHSPIPYAPE-UHFFFAOYSA-N samarium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Sm+3].[Sm+3] FKTOIHSPIPYAPE-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- ZIKATJAYWZUJPY-UHFFFAOYSA-N thulium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tm+3].[Tm+3] ZIKATJAYWZUJPY-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
Description
図1は、本発明の固体撮像装置をCMOSセンサに適用した場合の1画素分の要部断面図であり、図2は図1のA部拡大図である。これらの図に示すように、固体撮像装置1は、センサ部がHAD構造の固体撮像装置であり、次のような構成となっている。
次に図1に示した固体撮像装置の製造手順を図3に基づいて説明する。
Claims (8)
- 半導体基板の表面層に形成されたN型の不純物拡散層を有するフォトダイオードと、
第1金属材料を含有する絶縁材料からなり、前記フォトダイオード上に設けられ、前記半導体基板に対してホールをアキュムレートさせる方向の効果を及ぼす負電荷蓄積層と、
前記第1金属材料よりも電気陰性度が大きい第2金属材料を含有する絶縁材料からなり、前記フォトダイオードと前記負電荷蓄積層との間に設けられた界面層とを備え、
前記フォトダイオードは、前記N型の不純物拡散層が前記界面層と対向する部分においてホールアキュムレーション層となった
ことを特徴とする固体撮像装置。 - 請求項1記載の固体撮像装置において、
前記界面層と前記フォトダイオードとの間に酸化シリコン膜が設けられた
ことを特徴とする固体撮像装置。 - 請求項1または2記載の固体撮像装置において、
前記負電荷蓄積層は酸化ハフニウムからなる
ことを特徴とする固体撮像装置。 - 請求項3記載の固体撮像装置において、
前記界面層は、前記第2金属材料としてアルミニウム(Al),チタン(Ti),タンタル(Ta),バナジウム(V),ニオブ(Nb),プロトアクチニウム(Pa),クロム(Cr),モリブデン(Mo),タングステン(W),マンガン(Mn),テクネチウム(Tc),レニウム(Re),ルテニウム(Ru),コバルト(Co)、またはニッケル(Ni)28を含む
ことを特徴とする固体撮像装置。 - 請求項1〜4の何れかに記載の固体撮像装置において、
前記界面層は、前記第2金属材料の酸化物からなる
ことを特徴とする固体撮像装置。 - 請求項1〜5の何れかに記載の固体撮像装置において、
前記フォトダイオードは、P型拡散層上に前記N型の不純物拡散層を設けた構成である ことを特徴とする固体撮像装置。 - 請求項1〜6の何れかに記載の固体撮像装置において、
前記フォトダイオードの脇には、前記半導体基板上に設けたゲート電極を介してN型の拡散層が配置されている
ことを特徴とする固体撮像装置。 - 請求項1〜7の何れかに記載の固体撮像装置において、
前記半導体基板に接して当該半導体基板を構成する材料の酸化膜が設けられ、
前記酸化膜に接して前記界面層が設けられた
ことを特徴とする固体撮像装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008062487A JP5365033B2 (ja) | 2008-03-12 | 2008-03-12 | 固体撮像装置 |
US12/389,864 US7939860B2 (en) | 2008-03-12 | 2009-02-20 | Solid-state imaging device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008062487A JP5365033B2 (ja) | 2008-03-12 | 2008-03-12 | 固体撮像装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009218480A JP2009218480A (ja) | 2009-09-24 |
JP5365033B2 true JP5365033B2 (ja) | 2013-12-11 |
Family
ID=41062105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2008062487A Expired - Fee Related JP5365033B2 (ja) | 2008-03-12 | 2008-03-12 | 固体撮像装置 |
Country Status (2)
Country | Link |
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US (1) | US7939860B2 (ja) |
JP (1) | JP5365033B2 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2945671A1 (fr) * | 2009-05-18 | 2010-11-19 | St Microelectronics Sa | Photodiode a controle de charge d'interface et procede associe. |
FR2945672A1 (fr) * | 2009-05-18 | 2010-11-19 | St Microelectronics Sa | Photodiode a controle de charge d'interface par implantation et procede associe. |
US8872953B2 (en) * | 2009-10-30 | 2014-10-28 | Sony Corporation | Solid-state imaging device, manufacturing method thereof, camera, and electronic device |
JP5050063B2 (ja) * | 2010-01-20 | 2012-10-17 | 株式会社東芝 | 固体撮像装置 |
JP2012054321A (ja) * | 2010-08-31 | 2012-03-15 | Sony Corp | 固体撮像素子及びその製造方法、並びに固体撮像装置及び撮像装置 |
US9379275B2 (en) | 2012-01-31 | 2016-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing dark current in image sensors |
US8816462B2 (en) * | 2012-10-25 | 2014-08-26 | Omnivision Technologies, Inc. | Negatively charged layer to reduce image memory effect |
US9224881B2 (en) * | 2013-04-04 | 2015-12-29 | Omnivision Technologies, Inc. | Layers for increasing performance in image sensors |
JP2014241363A (ja) * | 2013-06-12 | 2014-12-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9754993B2 (en) * | 2015-08-31 | 2017-09-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Deep trench isolations and methods of forming the same |
US10163949B2 (en) | 2016-03-17 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Image device having multi-layered refractive layer on back surface |
EP3370251B1 (en) | 2017-03-03 | 2020-11-04 | Laser Systems & Solutions of Europe | Method for forming a shallow junction in a semiconductor substrate |
CN108428712A (zh) * | 2018-05-14 | 2018-08-21 | 德淮半导体有限公司 | 图像传感器及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4123415B2 (ja) | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
US7148525B2 (en) * | 2004-01-12 | 2006-12-12 | Micron Technology, Inc. | Using high-k dielectrics in isolation structures method, pixel and imager device |
US7507629B2 (en) * | 2004-09-10 | 2009-03-24 | Gerald Lucovsky | Semiconductor devices having an interfacial dielectric layer and related methods |
JP4631661B2 (ja) * | 2005-11-14 | 2011-02-16 | 日本ビクター株式会社 | 固体撮像素子 |
JP4992446B2 (ja) * | 2006-02-24 | 2012-08-08 | ソニー株式会社 | 固体撮像装置及びその製造方法、並びにカメラ |
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2008
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