JP5357637B2 - 測光装置 - Google Patents
測光装置 Download PDFInfo
- Publication number
- JP5357637B2 JP5357637B2 JP2009148289A JP2009148289A JP5357637B2 JP 5357637 B2 JP5357637 B2 JP 5357637B2 JP 2009148289 A JP2009148289 A JP 2009148289A JP 2009148289 A JP2009148289 A JP 2009148289A JP 5357637 B2 JP5357637 B2 JP 5357637B2
- Authority
- JP
- Japan
- Prior art keywords
- clock signal
- circuit
- generation circuit
- film
- signal generation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims abstract description 154
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 230000003321 amplification Effects 0.000 claims description 32
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 32
- 238000005375 photometry Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 description 129
- 239000004065 semiconductor Substances 0.000 description 115
- 239000013078 crystal Substances 0.000 description 68
- 239000010410 layer Substances 0.000 description 67
- 239000011521 glass Substances 0.000 description 56
- 238000000034 method Methods 0.000 description 56
- 229910021417 amorphous silicon Inorganic materials 0.000 description 42
- 229910052581 Si3N4 Inorganic materials 0.000 description 38
- 239000007789 gas Substances 0.000 description 38
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 36
- 239000010703 silicon Substances 0.000 description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 35
- 102100040844 Dual specificity protein kinase CLK2 Human genes 0.000 description 34
- 101000749291 Homo sapiens Dual specificity protein kinase CLK2 Proteins 0.000 description 34
- 230000008569 process Effects 0.000 description 29
- 238000010438 heat treatment Methods 0.000 description 27
- 150000002500 ions Chemical class 0.000 description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 description 19
- 239000012535 impurity Substances 0.000 description 19
- 238000005530 etching Methods 0.000 description 18
- 102100040862 Dual specificity protein kinase CLK1 Human genes 0.000 description 15
- 101000749294 Homo sapiens Dual specificity protein kinase CLK1 Proteins 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 15
- 229910052721 tungsten Inorganic materials 0.000 description 13
- 239000010937 tungsten Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 12
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000002184 metal Substances 0.000 description 10
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 10
- 230000001133 acceleration Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 9
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 238000011282 treatment Methods 0.000 description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 8
- 239000002585 base Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 238000010884 ion-beam technique Methods 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052719 titanium Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 7
- 229910052796 boron Inorganic materials 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229910052698 phosphorus Inorganic materials 0.000 description 7
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- 230000001965 increasing effect Effects 0.000 description 6
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 238000005247 gettering Methods 0.000 description 4
- 230000001678 irradiating effect Effects 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- -1 tungsten nitride Chemical class 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000007790 solid phase Substances 0.000 description 3
- 238000004506 ultrasonic cleaning Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 101100328957 Caenorhabditis elegans clk-1 gene Proteins 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 150000001342 alkaline earth metals Chemical class 0.000 description 2
- 239000005407 aluminoborosilicate glass Substances 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052800 carbon group element Inorganic materials 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- MQRWBMAEBQOWAF-UHFFFAOYSA-N acetic acid;nickel Chemical compound [Ni].CC(O)=O.CC(O)=O MQRWBMAEBQOWAF-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- BHVMAFDNFMTYLQ-UHFFFAOYSA-N azanylidyne(azanylidynegermyloxy)germane Chemical compound N#[Ge]O[Ge]#N BHVMAFDNFMTYLQ-UHFFFAOYSA-N 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000005078 molybdenum compound Substances 0.000 description 1
- 150000002752 molybdenum compounds Chemical class 0.000 description 1
- 229940078494 nickel acetate Drugs 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003609 titanium compounds Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/4426—Type with intensity to frequency or voltage to frequency conversion [IFC or VFC]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
- Liquid Crystal Display Device Control (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Controls And Circuits For Display Device (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009148289A JP5357637B2 (ja) | 2008-06-25 | 2009-06-23 | 測光装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008166334 | 2008-06-25 | ||
| JP2008166334 | 2008-06-25 | ||
| JP2009148289A JP5357637B2 (ja) | 2008-06-25 | 2009-06-23 | 測光装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013180062A Division JP5632944B2 (ja) | 2008-06-25 | 2013-08-30 | 測光装置、電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010032500A JP2010032500A (ja) | 2010-02-12 |
| JP2010032500A5 JP2010032500A5 (enExample) | 2012-06-21 |
| JP5357637B2 true JP5357637B2 (ja) | 2013-12-04 |
Family
ID=41130379
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009148289A Expired - Fee Related JP5357637B2 (ja) | 2008-06-25 | 2009-06-23 | 測光装置 |
| JP2013180062A Expired - Fee Related JP5632944B2 (ja) | 2008-06-25 | 2013-08-30 | 測光装置、電子機器 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013180062A Expired - Fee Related JP5632944B2 (ja) | 2008-06-25 | 2013-08-30 | 測光装置、電子機器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8334495B2 (enExample) |
| EP (1) | EP2138815B1 (enExample) |
| JP (2) | JP5357637B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010016449A1 (en) * | 2008-08-08 | 2010-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device having the same |
| WO2011086829A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| US9209209B2 (en) * | 2010-10-29 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for operating the same |
| JP6042137B2 (ja) * | 2012-08-31 | 2016-12-14 | 旭化成エレクトロニクス株式会社 | 赤外線センサモジュール |
| JP7757108B2 (ja) * | 2021-09-24 | 2025-10-21 | キヤノン株式会社 | 光電変換装置、撮像装置、制御方法、及びコンピュータプログラム |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4412342A (en) * | 1981-12-18 | 1983-10-25 | Gte Automatic Electric Labs Inc. | Clock synchronization system |
| JPS60185235U (ja) * | 1984-05-18 | 1985-12-09 | 横河電機株式会社 | 光パワ−メ−タ |
| DE69111800T2 (de) * | 1991-06-20 | 1995-12-14 | Hewlett Packard Gmbh | Photodiodenanordnung. |
| JPH0687036B2 (ja) * | 1992-01-22 | 1994-11-02 | 株式会社ジャパンエナジー | 測光装置 |
| US5214274A (en) | 1992-07-24 | 1993-05-25 | President And Fellows Of Harvard College | Image sensor array with threshold voltage detectors and charged storage capacitors |
| JPH06308585A (ja) * | 1993-04-27 | 1994-11-04 | Nikon Corp | 光電流周波数変換回路 |
| JPH06313840A (ja) | 1993-04-30 | 1994-11-08 | Fuji Film Micro Device Kk | 測光装置と測光方法 |
| US5917346A (en) * | 1997-09-12 | 1999-06-29 | Alfred E. Mann Foundation | Low power current to frequency converter circuit for use in implantable sensors |
| JPH11205247A (ja) * | 1998-01-16 | 1999-07-30 | Mitsubishi Electric Corp | 光電変換回路 |
| JP4211167B2 (ja) * | 1999-12-15 | 2009-01-21 | 株式会社デンソー | 光センサ |
| JP2002286504A (ja) | 2001-03-27 | 2002-10-03 | Citizen Watch Co Ltd | 光センサ回路およびこれを用いた光学式変位測長器 |
| US6774735B2 (en) * | 2002-01-17 | 2004-08-10 | Intel Corporation | Low power self-biasing oscillator circuit |
| US6707025B2 (en) * | 2002-06-04 | 2004-03-16 | Agilent Technologies, Inc. | High dynamic range receiver |
| JP4234485B2 (ja) | 2003-04-28 | 2009-03-04 | 浜松ホトニクス株式会社 | Ｉ／ｆ変換装置および光検出装置 |
| JP4138708B2 (ja) | 2004-07-12 | 2008-08-27 | 浜松ホトニクス株式会社 | 光検出装置 |
| EP1659379B1 (en) * | 2004-11-11 | 2009-08-26 | STMicroelectronics (Research & Development) Limited | Light monitor |
| JP2007059889A (ja) * | 2005-07-27 | 2007-03-08 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR100809700B1 (ko) * | 2006-08-30 | 2008-03-07 | 삼성전자주식회사 | 주변광을 감지하여 디스플레이 장치를 제어하는 주변광처리 시스템 및 그 시스템을 사용하는 방법 |
| US20100226495A1 (en) * | 2007-10-29 | 2010-09-09 | Michael Kelly | Digital readout method and apparatus |
| JP2009250842A (ja) * | 2008-04-08 | 2009-10-29 | Sharp Corp | 光量デジタル変換回路、ｉｃ、および電子機器 |
-
2009
- 2009-06-18 EP EP09163027.7A patent/EP2138815B1/en not_active Not-in-force
- 2009-06-18 US US12/487,287 patent/US8334495B2/en not_active Expired - Fee Related
- 2009-06-23 JP JP2009148289A patent/JP5357637B2/ja not_active Expired - Fee Related
-
2013
- 2013-08-30 JP JP2013180062A patent/JP5632944B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP2138815A1 (en) | 2009-12-30 |
| JP2014025942A (ja) | 2014-02-06 |
| JP2010032500A (ja) | 2010-02-12 |
| JP5632944B2 (ja) | 2014-11-26 |
| US8334495B2 (en) | 2012-12-18 |
| EP2138815B1 (en) | 2013-11-20 |
| US20090324244A1 (en) | 2009-12-31 |
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