JP5324805B2 - Aluminum foil for high-pressure anodes in electrolytic capacitors - Google Patents
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本発明は、電解コンデンサ中高圧陽極用アルミニウム箔に関する。 The present invention relates to an aluminum foil for high-pressure anodes in electrolytic capacitors.
電解コンデンサ中高圧陽極用として用いられるアルミニウム箔は、高い静電容量を得るために、最終焼鈍後の立方晶率すなわち立方体方位(100)面占有率が高く、電解エッチング処理において、トンネルピットを発生し易いものであることが望ましい。 Aluminum foil used for high-voltage anodes in electrolytic capacitors has high cubic crystal ratio after final annealing, that is, cube orientation (100) plane occupancy, in order to obtain high capacitance, and generates tunnel pits in electrolytic etching processing. It is desirable that it is easy to do.
このような特性をそなえたアルミニウム箔を得るために、種々の成分元素を添加したアルミニウム箔、例えば、エッチングピットの密度を増加させるために、微量のFe、Ni、Co、Cr、Mn、Zr、Ti、V、Moや、Pb、Bi、In、Snのうちの一種以上の元素を酸化皮膜中に特定量含有させるとともに、これらの元素のアルミニウム地中の含有量を規制したアルミニウム箔が提案されている(特許文献1参照)。 In order to obtain an aluminum foil having such characteristics, an aluminum foil added with various component elements, for example, a small amount of Fe, Ni, Co, Cr, Mn, Zr, An aluminum foil in which a specific amount of one or more elements of Ti, V, Mo, Pb, Bi, In, Sn is contained in the oxide film and the content of these elements in the aluminum ground is regulated is proposed. (See Patent Document 1).
また、微量の特定元素を、酸化皮膜中、酸化皮膜とアルミニウム地との界面、アルミニウム地中に特定量存在させて、垂直方向に伸びるエッチングピットを均一に整列して形成させ、静電容量の改善を図ったアルミニウム箔も提案されている(特許文献2、3参照)。
しかしながら、上記従来のアルミニウム箔においては、電解エッチング処理により形成されるエッチングピットの分散が必ずしも十分ではなく、拡径エッチングで部分的にピット合体が生じる場合がある。 However, in the above-described conventional aluminum foil, dispersion of etching pits formed by the electrolytic etching process is not always sufficient, and pit coalescence may be partially generated by the diameter expansion etching.
本発明は、微量の添加成分の組み合わせとエッチング特性との関係についてさらに試験、検討を重ねた結果としてなされたものであり、その目的は、電解エッチング処理において、トンネルピットを発生し易く、且つ拡径エッチングでのピット合体が抑制されて向上したピット分散性が得られ、高い静電容量をそなえた電解コンデンサ中高圧陽極用アルミニウム箔を提供することにある。 The present invention has been made as a result of further testing and investigation on the relationship between the combination of a small amount of additive components and the etching characteristics. The purpose of the present invention is to easily generate tunnel pits in the electrolytic etching process and to expand the relationship. An object of the present invention is to provide an aluminum foil for a high-pressure anode in an electrolytic capacitor that has improved pit dispersibility by suppressing pit coalescence in diameter etching and has a high capacitance.
上記の目的を達成するための本発明による電解コンデンサ中高圧陽極用アルミニウム箔は、アルミニウム純度が99.98%(質量%、以下同じ)以上で、Si10〜50ppm、Fe10〜50ppm、Cu10〜50ppm、Pb0.8〜1.5ppm、Cr10〜100ppmを含有し、上記以外の残部は不可避的不純物であり、Cu含有量X(ppm)とCr含有量Y(ppm)の関係が、16X+5Y≦800−(1)式を満たすことを特徴とする。 The aluminum foil for high-pressure anodes in electrolytic capacitors according to the present invention for achieving the above object has an aluminum purity of 99.98% (mass%, the same shall apply hereinafter) or more, Si 10-50 ppm, Fe 10-50 ppm, Cu 10-50 ppm, It contains Pb 0.8 to 1.5 ppm, Cr 10 to 100 ppm, the remainder other than the above is inevitable impurities, and the relationship between the Cu content X (ppm) and the Cr content Y (ppm) is 16X + 5Y ≦ 800− ( 1) It is characterized by satisfy | filling Formula.
本発明によれば、電解エッチング処理において、トンネルピットを発生し易く、且つ拡径エッチングでのピット合体が抑制されて向上したピット分散性が得られ、高い静電容量をそなえた電解コンデンサ中高圧陽極用アルミニウム箔が提供される。 According to the present invention, in an electrolytic etching process, tunnel pits are easily generated, and pit coalescence in diameter-enhancing etching is suppressed and improved pit dispersibility is obtained. An aluminum foil for the anode is provided.
本発明による電解コンデンサ中高圧陽極用アルミニウム箔は、アルミニウム純度が99.9%以上で、Si10〜50ppm、Fe10〜50ppmを含有するアルミニウムをベースとする。さらに好ましいアルミニウム純度は99.96%以上、最も好ましいアルミニウム純度は99.98%以上である。 The aluminum foil for high-pressure anodes in electrolytic capacitors according to the present invention is based on aluminum having an aluminum purity of 99.9% or more and containing 10 to 50 ppm of Si and 10 to 50 ppm of Fe. A more preferable aluminum purity is 99.96% or more, and a most preferable aluminum purity is 99.98% or more.
本発明のアルミニウム箔における添加元素の意義および限定理由について説明すると、CuおよびCrは、電解エッチング処理において、トンネルピットを発生し易くするとともに、ピット分散性を向上させるよう機能する。 The significance and reason for limitation of the additive element in the aluminum foil of the present invention will be described. Cu and Cr function to easily generate tunnel pits and improve pit dispersibility in the electrolytic etching process.
Cuの好ましい含有量は10〜50ppmの範囲であり、10ppm未満では、最終焼鈍時に結晶粒界の移動抑制効果が減少して結晶粒が粗大化し易くなり、50ppmを超えて含有すると、電解エッチング処理において孔食反応が過度になり、トンネルピットが生じ難くなる。Cuのさらに好ましい含有範囲は20〜40ppm、最も好ましい範囲は23〜36ppmである。 The preferable content of Cu is in the range of 10 to 50 ppm. If it is less than 10 ppm, the effect of suppressing the movement of the crystal grain boundary is reduced during final annealing, and the crystal grains are likely to be coarsened. Pitting corrosion reaction becomes excessive and tunnel pits are hardly generated. The more preferable content range of Cu is 20 to 40 ppm, and the most preferable range is 23 to 36 ppm.
Crの好ましい含有量は10〜100ppmの範囲であり、10ppm未満では、電解エッチング処理において、適度に分散したトンネルピットを発生させる効果が十分でなく、100ppmを超えて含有すると、電解エッチング処理において、必要以上に表層領域が溶解して有効な表面積拡大領域が制限される。Crのさらに好ましい含有範囲は 20〜60ppmである。 The preferable content of Cr is in the range of 10 to 100 ppm, and if it is less than 10 ppm, the effect of generating moderately dispersed tunnel pits is not sufficient in the electrolytic etching treatment. The surface area is dissolved more than necessary to limit the effective surface area expansion area. A more preferable content range of Cr is 20 to 60 ppm.
本発明においては、CuとCrの組み合わせが重要で、上記特定量のCuとCrを共存させ、Cu含有量X(ppm)とCr含有量Y(ppm)を、16X + 5Y ≦ 800の式を満足するように規定することにより、電解エッチング処理において、適度に分散したトンネルピットが形成され、拡面率が向上して高い静電容量を達成することができる。 In the present invention, the combination of Cu and Cr is important. The specific amount of Cu and Cr is allowed to coexist, and the Cu content X (ppm) and the Cr content Y (ppm) are expressed by the formula of 16X + 5Y ≦ 800. By defining it so as to satisfy, moderately dispersed tunnel pits are formed in the electrolytic etching treatment, and the surface expansion ratio is improved and a high capacitance can be achieved.
Pbは、電解エッチング処理時、酸化皮膜に欠陥を生ぜしめて溶解し易くし、ピットの形成と分散性を高めるよう作用する。好ましい含有量は、0.8〜1.5ppmの範囲であり、0.8ppm未満では、酸化皮膜中の欠陥量が少なくピットの分散性が小さくなり、1.5ppmを超えると、酸化皮膜中の欠陥量が過度になって全面溶解し、そのためアルミニウム側表面の微小剥離状溶解も過度になって表面の無効溶解が増加する。 Pb acts to improve the formation and dispersibility of pits by causing defects in the oxide film and facilitating dissolution during electrolytic etching. The preferred content is in the range of 0.8 to 1.5 ppm. If the content is less than 0.8 ppm, the amount of defects in the oxide film is small and the dispersibility of pits is small. The amount of defects becomes excessive and the entire surface is melted. Therefore, the micro-peeling dissolution on the surface on the aluminum side is excessive and the ineffective dissolution of the surface is increased.
本発明による電解コンデンサ中高圧陽極用アルミニウム箔は、所定の組成を有するアルミニウムを溶解、鋳造し、得られた鋳塊を、常法により均質化処理、熱間圧延、冷間圧延、中間焼鈍、箔圧延を経て、最終焼鈍することにより製造される。 The aluminum foil for high-pressure anodes in electrolytic capacitors according to the present invention melts and casts aluminum having a predetermined composition, and the resulting ingot is homogenized by a conventional method, hot rolling, cold rolling, intermediate annealing, Manufactured by final annealing after foil rolling.
以下、本発明の実施例を比較例と対比して説明し、その効果を実証する。なお、これらの実施例は本発明の一実施態様を示すものであり、本発明はこれらに限定されるものではない。 Examples of the present invention will be described below in comparison with comparative examples to demonstrate the effects. In addition, these Examples show one embodiment of this invention, and this invention is not limited to these.
実施例、比較例
表1に示す組成を有するアルミニウムを溶解、鋳造し、得られた鋳塊を、常法に従って均質化処理、熱間圧延、冷間圧延、箔圧延、中間焼鈍、箔圧延を経て、厚さ0.11mmとし、550℃の温度で3時間の最終焼鈍を行った。なお、表1において、本発明の条件を外れたものには下線を付した。また、表1において、(1)式を満たすものは○、(1)式を満たさないものは×とした。
Examples, comparative examples Aluminum having the composition shown in Table 1 was melted and cast, and the resulting ingot was subjected to homogenization treatment, hot rolling, cold rolling, foil rolling, intermediate annealing, and foil rolling according to a conventional method. After that, the thickness was 0.11 mm, and the final annealing was performed at a temperature of 550 ° C. for 3 hours. In Table 1, those outside the conditions of the present invention are underlined. Moreover, in Table 1, what satisfy | filled (1) Formula was set to (circle), and what does not satisfy (1) Formula was set to x.
得られたアルミニウム箔を試験材として、試験材に対して、塩酸(1モル/l)−硫酸(3モル/l)の水溶液(液温75℃)中で、電流密度0.2A/cm2にて直流エッチングを行い、引き続き、硝酸(1モル/l)−リン酸(0.05モル/l)の水溶液(液温80℃)中で、電流密度 0.25A/cm2にて直流エッチングを行った。 Using the obtained aluminum foil as a test material, a current density of 0.2 A / cm 2 in an aqueous solution (liquid temperature 75 ° C.) of hydrochloric acid (1 mol / l) -sulfuric acid (3 mol / l) with respect to the test material. DC etching was performed at a current density of 0.25 A / cm 2 in an aqueous solution of nitric acid (1 mol / l) -phosphoric acid (0.05 mol / l) (liquid temperature 80 ° C.). Went.
エッチング処理後、エッチング前後の重量差から単位面積当たりの溶解減量を測定し、比較例の試験材22の溶解減量を100とする相対値(%)で評価した。その後、上記エッチング処理後のエッチド箔に、ホウ酸5%水溶液中で400Vの化成処理を行って静電容量を測定し、比較例の試験材21の静電容量を100とする相対値(%)で評価した。 After the etching treatment, the dissolution loss per unit area was measured from the weight difference before and after the etching, and evaluated by a relative value (%) where the dissolution loss of the test material 22 of the comparative example was 100. Thereafter, the etched foil after the above etching treatment was subjected to a chemical conversion treatment at 400 V in a 5% aqueous solution of boric acid to measure the capacitance. ).
また、ピット分散性を評価するため、上記のエッチド箔を過塩素酸エタノール中で表層より10〜12μm電解研摩した後、SEM観察を行い、得られたSEM像について画像解析を実施して、ピット密度、平均ピット径を求めた。なお、ピット密度は、単独ピット以外に、ピット同士が合体して見掛け上1つのピットとして観察されるピット(合体ピット)も1つのピットとしてカウントしてピット密度を求め、比較例の試験材21のピット密度を100とする相対値(%)で評価した。平均ピット径(μm)は、各ピット(合体ピット含む)のピット径を、各ピットのピット面積と同等の面積である真円の直径と仮定し、その平均値を算出した。 In addition, in order to evaluate the pit dispersibility, the etched foil was subjected to 10-12 μm electrolytic polishing from the surface layer in ethanol perchlorate, followed by SEM observation, and image analysis was performed on the obtained SEM image. The density and average pit diameter were determined. In addition to the single pits, the pit density is obtained by counting the pits (merged pits) that are observed as one pit as a result of merging with each other as one pit. The relative value (%) where the pit density was 100 was evaluated. The average pit diameter (μm) was calculated on the assumption that the pit diameter of each pit (including coalesced pits) was the diameter of a perfect circle having the same area as the pit area of each pit.
同一エッチング条件で形成されたピットについて、ピット分散性が著しくわるい箔の画像解析を実施すると、拡径エッチングでピット合体が進行しているため、ピット密度は相対的に小さくカウントされ、平均ピット径は、合体ピット増加の影響により相対的に大きくなる。逆に、ピット分散性が優れている箔は、ピット密度が高く、平均ピット径が小さくなる。この観点からエッチド箔のピット分散性を評価し、ピット密度が105%以上、平均ピット径が1.15μm以下のものを◎、ピット密度が100%以上、平均ピット径が1.20μm以下のものを○、ピット密度が95%以上、平均ピット径が1.25μm以下のものを△、ピット密度が90%以上、平均ピット径が1.35μm以下のものを×とした。測定、評価結果を表2に示す。 When pits formed under the same etching conditions were subjected to image analysis of a foil with significantly poor pit dispersibility, pit coalescence progressed by diameter expansion etching, so the pit density was counted relatively small, and the average pit diameter Is relatively large due to an increase in coalescence pits. Conversely, a foil having excellent pit dispersibility has a high pit density and a small average pit diameter. From this point of view, the pit dispersibility of the etched foil was evaluated. The pit density was 105% or more and the average pit diameter was 1.15 μm or less, and the pit density was 100% or more and the average pit diameter was 1.20 μm or less. ◯, pit density is 95% or more and average pit diameter is 1.25 μm or less, Δ, pit density is 90% or more and average pit diameter is 1.35 μm or less, ×. Table 2 shows the measurement and evaluation results.
Claims (1)
16X+5Y≦800−(1) Aluminum purity is 99.98% by mass or more, Si10-50ppm, Fe10-50ppm, Cu10-50ppm, Pb0.8-1.5ppm, Cr10-100ppm, the rest other than the above are inevitable impurities, Cu A relation between the content X (ppm) and the Cr content Y (ppm) satisfies the following formula (1):
16X + 5Y ≦ 800− (1)
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