JP5305739B2 - キャパシタレスメモリ - Google Patents

キャパシタレスメモリ Download PDF

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Publication number
JP5305739B2
JP5305739B2 JP2008139151A JP2008139151A JP5305739B2 JP 5305739 B2 JP5305739 B2 JP 5305739B2 JP 2008139151 A JP2008139151 A JP 2008139151A JP 2008139151 A JP2008139151 A JP 2008139151A JP 5305739 B2 JP5305739 B2 JP 5305739B2
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JP
Japan
Prior art keywords
region
semiconductor
active layer
transistor
layer region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008139151A
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English (en)
Japanese (ja)
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JP2009021561A (ja
JP2009021561A5 (cg-RX-API-DMAC7.html
Inventor
達也 本田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008139151A priority Critical patent/JP5305739B2/ja
Publication of JP2009021561A publication Critical patent/JP2009021561A/ja
Publication of JP2009021561A5 publication Critical patent/JP2009021561A5/ja
Application granted granted Critical
Publication of JP5305739B2 publication Critical patent/JP5305739B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon

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  • Semiconductor Memories (AREA)
JP2008139151A 2007-06-12 2008-05-28 キャパシタレスメモリ Expired - Fee Related JP5305739B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008139151A JP5305739B2 (ja) 2007-06-12 2008-05-28 キャパシタレスメモリ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007154610 2007-06-12
JP2007154610 2007-06-12
JP2008139151A JP5305739B2 (ja) 2007-06-12 2008-05-28 キャパシタレスメモリ

Publications (3)

Publication Number Publication Date
JP2009021561A JP2009021561A (ja) 2009-01-29
JP2009021561A5 JP2009021561A5 (cg-RX-API-DMAC7.html) 2011-04-28
JP5305739B2 true JP5305739B2 (ja) 2013-10-02

Family

ID=40131457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008139151A Expired - Fee Related JP5305739B2 (ja) 2007-06-12 2008-05-28 キャパシタレスメモリ

Country Status (3)

Country Link
US (1) US7755105B2 (cg-RX-API-DMAC7.html)
JP (1) JP5305739B2 (cg-RX-API-DMAC7.html)
KR (1) KR101448899B1 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7750368B2 (en) * 2008-06-13 2010-07-06 Macronix International Co., Ltd. Memory device
US8278167B2 (en) 2008-12-18 2012-10-02 Micron Technology, Inc. Method and structure for integrating capacitor-less memory cell with logic
KR101753927B1 (ko) * 2009-11-06 2017-07-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20120019284A1 (en) * 2010-07-26 2012-01-26 Infineon Technologies Austria Ag Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor
KR20120060407A (ko) * 2010-12-02 2012-06-12 삼성전자주식회사 표시 기판, 이의 제조 방법 및 이를 포함하는 터치 표시 장치
TWI602303B (zh) * 2011-01-26 2017-10-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
US8969924B2 (en) 2012-05-21 2015-03-03 The Board Of Trustees Of The Leland Stanford Junior University Transistor-based apparatuses, systems and methods
CN121040234A (zh) * 2024-03-28 2025-11-28 京东方科技集团股份有限公司 晶体管、驱动背板及制备方法和显示装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
JPH0824131B2 (ja) * 1985-10-07 1996-03-06 株式会社日立製作所 電界効果トランジスタ
US4755865A (en) 1986-01-21 1988-07-05 Motorola Inc. Means for stabilizing polycrystalline semiconductor layers
US4899202A (en) 1988-07-08 1990-02-06 Texas Instruments Incorporated High performance silicon-on-insulator transistor with body node to source node connection
US5821563A (en) 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
JP3407232B2 (ja) 1995-02-08 2003-05-19 富士通株式会社 半導体記憶装置及びその動作方法
US5914504A (en) * 1995-06-16 1999-06-22 Imec Vzw DRAM applications using vertical MISFET devices
JPH1092952A (ja) 1996-09-18 1998-04-10 Toshiba Corp 半導体記憶装置
JPH11204661A (ja) * 1997-10-29 1999-07-30 Sony Corp 半導体メモリセル及びその製造方法
EP1166347A2 (en) * 1999-02-24 2002-01-02 AUGUSTO, Carlos Jorge Ramiro Proenca Misfet with narrow bandgap source
JP4216483B2 (ja) 2001-02-15 2009-01-28 株式会社東芝 半導体メモリ装置
US6861689B2 (en) * 2002-11-08 2005-03-01 Freescale Semiconductor, Inc. One transistor DRAM cell structure and method for forming
EP1737044B1 (en) * 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
US7518196B2 (en) * 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication

Also Published As

Publication number Publication date
US7755105B2 (en) 2010-07-13
US20080308802A1 (en) 2008-12-18
JP2009021561A (ja) 2009-01-29
KR101448899B1 (ko) 2014-10-13
KR20080109610A (ko) 2008-12-17

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