JP5305708B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5305708B2 JP5305708B2 JP2008083964A JP2008083964A JP5305708B2 JP 5305708 B2 JP5305708 B2 JP 5305708B2 JP 2008083964 A JP2008083964 A JP 2008083964A JP 2008083964 A JP2008083964 A JP 2008083964A JP 5305708 B2 JP5305708 B2 JP 5305708B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- light
- emitting element
- material layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims description 67
- 239000004020 conductor Substances 0.000 claims description 29
- 239000004065 semiconductor Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- 238000000605 extraction Methods 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
に設けられている。発光素子は、透光性材料層の開口内に配置されており、一対の導体パターン上に実装されている。発光装置は、発光素子および透光性材料層の間に設けられた、透光性を有している介在層と、透光性材料層の外側表面に接した封入層とを備えている。介在層は透光性材料層より大きい屈折率を有し、封入層は透光性材料層より小さい屈折率を有している。一対の導体パターンのうち、一方の導体パターンは透光性材料層の外側に延在しており、他方の導体パターンは透光性材料層の内側に配置されているとともに下方に導出されている。
11pa,11pc 導体パターン
12 発光素子
14 透光性材料層
15 介在層
Claims (5)
- 一対の導体パターンを含む上面を有する基体と、
前記一対の導体パターンの少なくとも一部の領域上に配置された開口を有しており、前記基体の前記上面に設けられた透光性材料層と、
前記透光性材料層の前記開口内に配置されており、前記一対の導体パターン上に実装された発光素子と、
透光性を有しており、前記発光素子および前記透光性材料層の間に設けられた介在層と、
前記透光性材料層の外側表面に接した封入層と、
を備えており、前記介在層は前記透光性材料層より大きい屈折率を有し、前記封入層は前記透光性材料層より小さい屈折率を有しており、
前記一対の導体パターンのうち、一方の導体パターンは前記透光性材料層の外側に延在しており、他方の導体パターンは前記透光性材料層の内側に配置されているとともに下方に導出されている発光装置。 - 前記透光性材料層の内側表面が傾斜していることを特徴とする請求項1記載の発光装置。
- 前記内側表面が上方へ広がっていることを特徴とする請求項2記載の発光装置。
- 前記封入層が前記発光素子に接していることを特徴とする請求項1記載の発光装置。
- 蛍光材料を含んでおり、前記封入層を覆っている発光部材をさらに備えたことを特徴とする請求項1記載の発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008083964A JP5305708B2 (ja) | 2007-03-28 | 2008-03-27 | 発光装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007085153 | 2007-03-28 | ||
JP2007085153 | 2007-03-28 | ||
JP2008083964A JP5305708B2 (ja) | 2007-03-28 | 2008-03-27 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008270791A JP2008270791A (ja) | 2008-11-06 |
JP5305708B2 true JP5305708B2 (ja) | 2013-10-02 |
Family
ID=40049812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008083964A Expired - Fee Related JP5305708B2 (ja) | 2007-03-28 | 2008-03-27 | 発光装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7994528B2 (ja) |
JP (1) | JP5305708B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011024502A1 (ja) * | 2009-08-28 | 2011-03-03 | 京セラ株式会社 | 発光装置 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6196780A (ja) * | 1984-10-17 | 1986-05-15 | Stanley Electric Co Ltd | Ledチツプのコ−テイング方法 |
JPH1187778A (ja) * | 1997-09-02 | 1999-03-30 | Toshiba Corp | 半導体発光素子、半導体発光装置およびその製造方法 |
US6717362B1 (en) * | 2002-11-14 | 2004-04-06 | Agilent Technologies, Inc. | Light emitting diode with gradient index layering |
JP4424170B2 (ja) * | 2004-11-19 | 2010-03-03 | 豊田合成株式会社 | 発光装置 |
EP1840977A4 (en) * | 2004-12-24 | 2009-07-29 | Kyocera Corp | LIGHT SOURCE AND LIGHTING DEVICE |
US7646035B2 (en) * | 2006-05-31 | 2010-01-12 | Cree, Inc. | Packaged light emitting devices including multiple index lenses and multiple index lenses for packaged light emitting devices |
WO2008018615A1 (en) * | 2006-08-09 | 2008-02-14 | Panasonic Corporation | Light-emitting device |
-
2008
- 2008-03-27 JP JP2008083964A patent/JP5305708B2/ja not_active Expired - Fee Related
- 2008-03-27 US US12/056,893 patent/US7994528B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090152580A1 (en) | 2009-06-18 |
JP2008270791A (ja) | 2008-11-06 |
US7994528B2 (en) | 2011-08-09 |
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