JP5298480B2 - Electro-optical device and electronic apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an electro-optical device, such as for example, a liquid crystal device, which performs high quality display by reducing contact resistance. <P>SOLUTION: The electro-optical device includes, on a substrate (10), a first insulating film (44) , a pixel electrode (9a) prepared on the first insulating film, a colored layer (Cf) formed on the lower layer side than the first insulating film, a conductive film (93) formed on the lower layer side than the colored layer and electrically connected to the pixel electrode via a contact hole (85) opened passing through the first insulating film (44), and regulation films (1f, 3c) formed in the region with the contact hole formed therein on the lower layer side than the conductive film. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to an electro-optical device such as a liquid crystal device and a manufacturing method thereof, and a technical field of an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  This type of electro-optical device is used, for example, as a light valve of a single-plate projector, which is an example of an electronic device, or is incorporated in a viewfinder of a digital camera.

  In such an electro-optical device, for example, in order to perform color display, one pixel is composed of three types of sub-pixels for R (red), G (green), and B (blue). A color filter is provided.

  For example, Patent Document 1 discloses a stacked structure in which a color filter is formed on the same substrate as a pixel electrode or a pixel switching element, that is, a so-called on-chip color filter structure. According to such a configuration, the color filter is provided on the lower side of the pixel electrode on the substrate, and the pixel electrode is electrically connected to the pixel switching element provided on the lower side of the color filter. Is done.

  On the other hand, the pixel electrode is provided on the uppermost layer side in the stacked structure on the substrate. An alignment film is formed on the pixel electrode. In order to reduce unevenness on the surface of the alignment film that causes display unevenness, an insulating film that has been subjected to planarization is formed immediately below the pixel electrode.

JP 2000-347215 A

  However, according to the above-described on-chip color filter structure, there arises a problem that the contact resistance for electrical connection between the pixel electrode and the pixel switching element is increased.

  More specifically, in order to make an electrical connection between the pixel electrode and the pixel switching element, a contact hole is opened through the planarized insulating film directly under the pixel electrode. This contact hole may have a relatively large depth depending on the film thickness of the color filter. On the other hand, when the electro-optical device is required to be downsized for use in a light valve or a viewfinder as described above, it is difficult to adjust the diameter of the contact hole in accordance with the depth. As a result, the contact hole has an increased aspect ratio (ratio between the contact hole diameter and its depth) and a high contact resistance.

  The present invention has been made in view of the above problems and the like, and can reduce the contact resistance between a pixel electrode and a conductive film electrically connected to, for example, a pixel switching element, and can be easily downsized. It is another object of the present invention to provide an electro-optical device capable of performing high-quality display, a manufacturing method thereof, and an electronic apparatus including such an electro-optical device.

An electro-optical device according to one embodiment of the present invention is formed between a substrate, a pixel electrode, a first insulating film provided between the pixel electrode and the substrate, and the first insulating film and the substrate. A colored layer formed between the colored layer and the substrate, between the first insulating film and the substrate, and between the first interlayer insulating film and the substrate. A second interlayer insulating film disposed therebetween, a first conductive film disposed between the first interlayer insulating film and the second interlayer insulating film, and a direction from the pixel electrode toward the substrate. An adjustment film formed between the conductive film and the substrate in a region where a first contact hole opened through the first insulating film is formed, and the first conductive film on the pixel electrode And a transistor electrically connected through the first contact hole, and the pixel electrode And the conductive film are electrically connected through the first contact hole, and the adjustment film is not provided in a region overlapping with the colored layer when viewed from the pixel electrode toward the substrate. The colored layer has a first surface on the first insulating film side, a second surface on the substrate side, and the distance between the substrate and the bottom of the first contact hole is the substrate The first conductive film is smaller than the distance between the first surface and the first surface, and larger than the distance between the substrate and the second surface, and the first conductive film is opened through the first interlayer insulating film. Electrically connected to a second conductive film through a contact hole; the second conductive film is electrically connected to the transistor; and when viewed from the pixel electrode toward the substrate, the first interlayer insulating film Region in which a second contact hole opened through the hole is formed , The adjustment layer is being arranged.
The electro-optical device according to the present invention includes a substrate, a pixel electrode, a first insulating film provided between the pixel electrode and the substrate, and between the first insulating film and the substrate. A colored layer formed on the substrate, a first interlayer insulating film disposed between the colored layer and the substrate, and between the first insulating film and the substrate, the first interlayer insulating film, and the substrate. A second interlayer insulating film disposed between the first and second interlayer insulating films, a conductive film disposed between the first interlayer insulating film and the second interlayer insulating film, and a direction from the pixel electrode toward the substrate. An adjustment film formed between the conductive film and the substrate is provided in a region where a contact hole opened through the first insulating film is formed, and the pixel electrode and the conductive film Is electrically connected through the contact hole and is directed from the pixel electrode toward the substrate. Accordingly, the adjustment film is not provided in a region overlapping with the colored layer, and the colored layer has a first surface on the first insulating film side and a second surface on the substrate side. The distance between the substrate and the bottom of the contact hole is smaller than the distance between the substrate and the first surface, and larger than the distance between the substrate and the second surface. To do.
In order to solve the above problems, the first electro-optical device according to the present invention includes a first insulating film, a pixel electrode provided on the first insulating film, and the first electrode on the substrate. A colored layer formed on a lower layer side than the insulating film, and electrically connected to the pixel electrode through a contact hole formed on the lower layer side than the colored layer and opened through the first insulating film. A conductive film, and an adjustment film which is not provided in a region overlapping with the colored layer but is formed on the lower layer side of the conductive film in a region where the contact hole is formed.

  According to the first electro-optical device of the present invention, for example, subpixels for R, G, and B are provided in one pixel, and the subpixel includes a “coloring layer” according to the present invention as a color filter. Is provided. In each sub-pixel, for example, transmitted light is emitted through the colored layer, so that color display can be performed for each pixel.

  The pixel electrode is provided on the first insulating film. The first insulating film may be subjected to a planarization process such as chemical mechanical polishing (CMP). By performing the planarization process on the first insulating film, for example, the occurrence of unevenness on the surface of the alignment film provided on the pixel electrode can be reduced. Thereby, for example, it is possible to suppress the occurrence of poor alignment of an electro-optical material such as liquid crystal.

  The colored layer is formed on the same substrate as the pixel electrode on the lower layer side of the pixel electrode through the first insulating film. The pixel electrode and the colored layer are disposed in the opening region. Here, the “opening region” refers to a region where light that actually contributes to display is emitted by transmission or reflection. In the non-opening region, various elements such as pixel switching elements and wirings such as data lines are formed. Here, the “non-opening region” means a region excluding the opening region, in other words, a region where light that actually contributes to display is not emitted. The pixel electrode is interlayer-insulated from various elements and wirings by the first insulating film.

  In the first insulating film, a contact hole is formed in the non-opening region to electrically connect the pixel electrode and the conductive film formed on the lower layer side of the first insulating film and the colored layer. The conductive film functions as a relay layer for electrically relay-connecting the pixel switching element and the pixel electrode, for example.

  Here, if no countermeasure is taken, the depth of the contact hole for electrically connecting the conductive film and the pixel electrode may be relatively large depending on the thickness of the colored layer.

  However, in the present invention, in particular, the adjustment film is formed in a region where the contact hole is formed on the lower layer side than the conductive film. Therefore, in the direction perpendicular to the substrate surface, that is, in the thickness direction of the laminated structure in which the colored layer, the pixel electrode, various elements or wirings are formed, the conductive film is electrically connected to the pixel electrode through at least the contact hole. The portion to be formed is disposed at a relatively high position toward the upper layer side by the thickness of the adjustment film. Therefore, the bottom of the contact hole can be arranged at a relatively high position toward the upper layer side as compared with the case where the adjustment film is not provided according to the position of the conductive film. That is, the depth of the contact hole can be adjusted by adjusting the thickness of the adjustment film.

  Therefore, even when it is difficult to adjust the diameter of the contact hole, the aspect ratio can be adjusted more easily by adjusting the depth of the contact hole. As a result, the contact resistance in the contact hole can be adjusted. Therefore, it is possible to prevent the contact resistance from increasing by adjusting the aspect ratio to be low.

  Therefore, according to the first electro-optical device of the present invention as described above, it is possible to prevent the display quality from being deteriorated by reducing the size more easily and increasing the contact resistance.

  In one aspect of the first electro-optical device of the invention, the semiconductor device includes a semiconductor layer and a gate electrode formed on a lower layer side than the conductive film, and the pixel electrode is electrically connected to the pixel electrode through the conductive film and the contact hole. The adjustment film is formed of the same film as at least one of the semiconductor layer and the gate electrode.

  According to this aspect, each sub-pixel is provided with a transistor such as a TFT (Thin Film Transistor) as a pixel switching element. Therefore, active matrix driving can be performed by switching the pixel electrode for each sub-pixel.

  In this embodiment, the adjustment film is formed of the same film as at least one of the semiconductor layer and the gate electrode of the transistor. Here, the “same film” means films formed on the same occasion in the manufacturing process and are the same type of film. Therefore, since the transistor and the adjustment film can be formed at the same opportunity, the stacked structure and the manufacturing process thereof can be further simplified.

  In another aspect of the first electro-optical device of the present invention, the first electro-optical device is formed on a lower layer side than the conductive film, and has a first projecting portion projecting toward the upper layer side in a region where the contact hole is formed. A second insulating film is provided.

  According to this aspect, the second insulating film is formed as a base insulating film formed so as to cover the entire surface of the substrate substantially on the lower layer side of the conductive film, or various elements and wirings are disposed between each other. Formed to insulate. The second insulating film has a first protrusion in a region where the contact hole is formed.

  Therefore, in a direction perpendicular to the substrate surface (thickness direction of the stacked structure), a portion of the conductive film that is electrically connected to the pixel electrode through at least the contact hole is an upper layer by the height of the first protrusion. It arrange | positions in a relatively high position toward the side. Accordingly, the bottom of the contact hole can be arranged at a relatively high position toward the upper layer side as compared with the case where the first protrusion is not provided, depending on the position of the corresponding conductive film. Become. As a result, the depth of the contact hole can be adjusted by adjusting the height of the first protrusion in addition to or instead of the adjustment film described above.

  In another aspect of the first electro-optical device of the present invention, the substrate has a second protruding portion protruding toward the upper layer side in a region where the contact hole is formed.

  According to this aspect, in the direction perpendicular to the substrate surface (thickness direction of the stacked structure), the portion of the conductive film that is electrically connected to the pixel electrode through at least the contact hole is the height of the second protrusion. It is arranged at a relatively high position toward the upper layer side. Therefore, it is possible to arrange the bottom of the contact hole at a relatively high position toward the upper layer side as compared with the case where the second protrusion is not provided according to the position of the corresponding conductive film. Become. Therefore, the depth of the contact hole can be adjusted by adjusting the height of the second protrusion in addition to or instead of the adjustment film or the first protrusion described above.

An electro-optical device according to another embodiment of the present invention includes a substrate, a pixel electrode, a first insulating film provided between the pixel electrode and the substrate, and between the first insulating film and the substrate. A colored layer formed on the substrate, a first interlayer insulating film disposed between the colored layer and the substrate, and between the first insulating film and the substrate, the first interlayer insulating film, and the substrate. A second interlayer insulating film disposed between the first interlayer insulating film, the first conductive film disposed between the first interlayer insulating film and the second interlayer insulating film, and the first conductive film and the substrate. A second insulating film formed therebetween, and a transistor electrically connected to the pixel electrode through the first conductive film and the first contact hole, wherein the second insulating film includes the pixel A first contact hole opened through the first insulating film as viewed from the electrode toward the substrate In a region where the pixel electrode is formed, and the pixel electrode and the first conductive film are electrically connected via the first contact hole. When viewed from the direction from the pixel electrode toward the substrate, the first protrusion is not provided in a region overlapping the colored layer, and the colored layer has a first surface on the first insulating film side. A second surface on the substrate side, wherein a distance between the substrate and the bottom of the contact hole is smaller than a distance between the substrate and the first surface, and the substrate and the second surface The first conductive film is electrically connected to the second conductive film through a second contact hole opened through the first interlayer insulating film, and the second conductive film The film is electrically connected to the transistor and is directed from the pixel electrode toward the substrate. The first protrusion is disposed in a region where a second contact hole opened through the first interlayer insulating film is formed when viewed from the side.
The electro-optical device according to the present invention includes a substrate, a pixel electrode, a first insulating film provided between the pixel electrode and the substrate, and between the first insulating film and the substrate. A colored layer formed on the substrate, a first interlayer insulating film disposed between the colored layer and the substrate, and between the first insulating film and the substrate, the first interlayer insulating film, and the substrate. A second interlayer insulating film disposed between the conductive film, a conductive film disposed between the first interlayer insulating film and the second interlayer insulating film, and between the conductive film and the substrate. A second insulating film, and the second insulating film is formed in a region in which a contact hole opened through the first insulating film is formed when viewed from the pixel electrode toward the substrate. A first projecting portion projecting toward the pixel electrode side, and the pixel electrode and the conductive film are When viewed from the direction from the pixel electrode toward the substrate, the first protrusion is not provided in a region overlapping the colored layer, and the colored layer is not connected to the first layer. A first surface on the insulating film side; a second surface on the substrate side; and a distance between the substrate and the bottom of the contact hole is between the substrate and the first surface. It is smaller than the distance and larger than the distance between the substrate and the second surface.
In order to solve the above-described problem, the second electro-optical device according to the present invention includes a first insulating film, a pixel electrode provided on the first insulating film, and the first electrode on the substrate. A colored layer formed on a lower layer side than the insulating film, and electrically connected to the pixel electrode through a contact hole formed on the lower layer side than the colored layer and opened through the first insulating film. A conductive film; and a second insulating film having a first protrusion protruding toward an upper layer on a lower layer side than the conductive film in a region where the contact hole is formed, and the first protrusion Is not provided in a region overlapping with the colored layer.

  According to the second electro-optical device of the present invention, the depth of the contact hole can be adjusted by adjusting the height of the first protrusion in the second insulating film. Therefore, as with the first electro-optical device, the contact resistance can be prevented from increasing by adjusting the aspect ratio to be low.

An electro-optical device according to still another aspect of the present invention includes a substrate, a pixel electrode, a first insulating film provided between the pixel electrode and the substrate, and the first insulating film and the substrate. A colored layer formed therebetween, a first interlayer insulating film disposed between the colored layer and the substrate, and between the first insulating film and the substrate; the first interlayer insulating film; A second interlayer insulating film disposed between the substrate, a first conductive film disposed between the first interlayer insulating film and the second interlayer insulating film, and electrically connected to the pixel electrode. The pixel electrode in a region where a first contact hole opened through the first insulating film as viewed from the pixel electrode toward the substrate is formed. The pixel electrode and the first conductive film are arranged in front of each other. The second protrusion is not provided in a region overlapping with the colored layer as viewed from the direction from the pixel electrode toward the substrate, and is electrically connected through the first contact hole. A first surface on the first insulating film side, a second surface on the substrate side, and a distance between the substrate and the bottom of the first contact hole is the substrate and the first surface The first conductive film is interposed through a second contact hole that penetrates the first interlayer insulating film and is larger than the distance between the substrate and the second surface. The second conductive film is electrically connected to the transistor, and the second conductive film is electrically connected to the transistor. The second conductive film is opened through the first interlayer insulating film when viewed from the pixel electrode toward the substrate. The second protrusion is formed in a region where the second contact hole is formed. Characterized in that is arranged.
The electro-optical device according to the present invention includes a substrate, a pixel electrode, a first insulating film provided between the pixel electrode and the substrate, and between the first insulating film and the substrate. A colored layer formed on the substrate, a first interlayer insulating film disposed between the colored layer and the substrate, and between the first insulating film and the substrate, the first interlayer insulating film, and the substrate. A second interlayer insulating film disposed between the first interlayer insulating film and a conductive film disposed between the first interlayer insulating film and the second interlayer insulating film. A second projecting portion projecting toward the pixel electrode in a region where a contact hole opened through the first insulating film as viewed from a direction toward the substrate is formed; And the conductive film are electrically connected through the contact hole, and are electrically connected to the pixel electrode from the front. When viewed from the direction toward the substrate, the second projecting portion is not provided in a region overlapping the colored layer, and the colored layer has a first surface on the first insulating film side, and is on the side of the substrate. A distance between the substrate and the bottom of the contact hole is smaller than a distance between the substrate and the first surface, and a distance between the substrate and the second surface. It is characterized by being larger.
In order to solve the above problems, the third electro-optical device according to the present invention described above includes a first insulating film, a pixel electrode provided on the first insulating film, and the first electrode on the substrate. A colored layer formed on a lower layer side than the insulating film, and electrically connected to the pixel electrode through a contact hole formed on the lower layer side than the colored layer and opened through the first insulating film. The substrate has a second projecting portion projecting toward the upper layer side in a region where the contact hole is formed, and the second projecting portion is disposed in a region overlapping the colored layer. It is not provided.

  According to the third electro-optical device of the present invention, the depth of the contact hole can be adjusted by adjusting the height of the second protrusion. Therefore, as in the first or second electro-optical device, it is possible to prevent the contact resistance from increasing by adjusting the aspect ratio to be low.

  In order to solve the above-described problems, an electronic apparatus according to the present invention includes any one of the above-described first to third electro-optical devices (including various aspects thereof) according to the present invention.

  According to the electronic apparatus of the present invention, since the first to third electro-optical devices of the present invention described above are provided, the projection type display that can be easily downsized and display high quality. Various electronic devices such as a device, a mobile phone, an electronic notebook, a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized.

An electro-optical device manufacturing method according to an aspect of the present invention includes a step of forming an adjustment film on a substrate, a step of forming a second interlayer insulating film, and a conductive film formed on the second interlayer insulating film A step of forming a first interlayer insulating film on the conductive film, a step of forming a colored layer on the first interlayer insulating film, and the conductive film and the coloring on the colored layer Forming a first insulating film so as to cover the layer; forming a contact hole penetrating the first insulating film; and a pixel electrode electrically connected to the conductive film through the contact hole Forming on the first insulating film,
In the step of forming the adjustment film on the substrate, the adjustment film is disposed in a region where the contact hole is formed and is overlapped with the colored layer when viewed from the pixel electrode toward the substrate. Without being disposed, the colored layer has a first surface on the first insulating film side, a second surface on the substrate side, and the distance between the substrate and the bottom of the contact hole is The distance between the substrate and the first surface is smaller than the distance between the substrate and the second surface.
In addition, in order to solve the above problems, the first electro-optical device manufacturing method according to the present invention includes a step of forming an adjustment film on a substrate and a conductive film on an upper layer side of the adjustment film. Forming a colored layer on the upper layer side of the conductive film, forming a first insulating film on the upper layer side of the colored layer so as to cover the conductive film and the colored layer, A step of opening a contact hole through one insulating film, and a step of forming a pixel electrode electrically connected to the conductive film through the contact hole on the first insulating film, In the step of forming the adjustment film, the adjustment film is disposed in a region where the contact hole is formed and is not disposed in a region overlapping the colored layer.

  According to the first method for manufacturing an electro-optical device of the present invention, the depth of the contact hole can be adjusted by adjusting the thickness of the adjustment film. Thereby, it is possible to prevent the contact resistance from increasing by adjusting the aspect ratio to be low. Accordingly, it is possible to easily reduce the size of the electro-optical device and increase the contact resistance, thereby preventing display quality from being deteriorated in the electro-optical device.

According to another aspect of the method of manufacturing an electro-optical device of the present invention, a step of forming a second insulating film having a first protruding portion protruding upward on a substrate and a second interlayer insulating film are formed. Forming a conductive film on the second interlayer insulating film; forming a first interlayer insulating film on the conductive film; and forming a colored layer on the first interlayer insulating film A step of forming a first insulating film on the colored layer so as to cover the conductive film and the colored layer, a step of forming a contact hole penetrating the first insulating film, and the contact hole Forming a pixel electrode electrically connected to the conductive film through the first insulating film, and having a first protruding portion protruding upward on the substrate. 2 In the step of forming the insulating film, the pixel electrode is directed to the substrate. When viewed from the direction, the first projecting portion is disposed in a region where the contact hole is formed and is not disposed in a region overlapping with the colored layer, and the colored layer is first on the first insulating film side. And a second surface on the substrate side, wherein a distance between the substrate and the bottom of the contact hole is smaller than a distance between the substrate and the first surface, It is larger than the distance between the second surface.
In addition, in order to solve the above-described problem, the second electro-optical device manufacturing method according to the present invention forms a second insulating film having a first protruding portion protruding toward the upper layer side on the substrate. A step of forming a conductive film on the upper layer side of the second insulating film, a step of forming a colored layer on the upper layer side of the conductive film, and the conductive film and the colored layer on the upper layer side of the colored layer. A step of forming a first insulating film so as to cover the pixel, a step of opening a contact hole through the first insulating film, and a pixel electrically connected to the conductive film through the contact hole Forming an electrode on the first insulating film, and in the step of forming the second insulating film, the first projecting portion is disposed in a region where the contact hole is formed and the colored layer is formed. Do not place in overlapping areas.

  According to the second method for manufacturing an electro-optical device of the present invention, the depth of the contact hole can be adjusted by adjusting the height of the first protrusion in the second insulating film. Accordingly, it is possible to prevent the contact resistance from increasing by adjusting the aspect ratio to be low, as in the first method for manufacturing the electro-optical device.

According to still another aspect of the invention, the method of manufacturing the electro-optical device includes a step of forming a second protruding portion protruding upward on the substrate, a step of forming a second interlayer insulating film, and the second method. forming a conductive film on the interlayer insulating film, forming a first interlayer insulating film on the conductive film, forming a colored layer on the first interlayer insulating film, the colored forming a first insulating film to cover the conductive layer and the colored layer on the layer, a step of opening a contact hole penetrating the first insulating layer, said conductive through the contact hole comprising a step of forming an electrical connection to a pixel electrode film on the first insulating film, and the substrate, in the step of forming a second protrusion protruding toward the upper side, the pixel electrode when viewed from a direction toward the substrate from the said second projecting portion Not disposed in the region overlapping with the colored layer as well as arranged in an area contact hole is formed, the colored layer has a first surface on a side of the first insulating film, first on the side of the substrate 2 A distance between the substrate and the bottom of the contact hole is smaller than a distance between the substrate and the first surface and greater than a distance between the substrate and the second surface. It is characterized by.
Further, in order to solve the above problems, the third electro-optical device manufacturing method according to the present invention includes a step of forming, on the substrate, a second protruding portion that protrudes toward the upper layer side. Forming a conductive film; forming a colored layer above the conductive film; and forming a first insulating film on the upper layer side of the colored layer so as to cover the conductive film and the colored layer. Forming a contact hole through the first insulating film, and forming a pixel electrode electrically connected to the conductive film through the contact hole on the first insulating film. In the step of forming the second projecting portion, the second projecting portion is disposed in a region where the contact hole is formed and is not disposed in a region overlapping the colored layer.

  According to the third method for manufacturing an electro-optical device of the present invention, the depth of the contact hole can be adjusted by adjusting the height of the second protrusion. Accordingly, as in the first or second electro-optical device manufacturing method, the contact resistance can be prevented from increasing by adjusting the aspect ratio to be low.

  Such an operation and other advantages of the present invention will become apparent from the best mode for carrying out the invention described below.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a driving circuit built-in type TFT active matrix driving type liquid crystal device, which is an example of the electro-optical device of the present invention, is taken as an example.

  First, the overall configuration of the liquid crystal device according to the present embodiment will be described with reference to FIGS. 1 and 2. Here, FIG. 1 is a schematic plan view of the liquid crystal device as seen from the side of the counter substrate together with the components formed on the TFT array substrate, and FIG. 2 is a schematic diagram of HH ′ of FIG. It is sectional drawing.

  1 and 2, the liquid crystal device is composed of a TFT array substrate 10 and a counter substrate 20 which are arranged to face each other. The TFT array substrate 10 is a transparent substrate such as a quartz substrate, a glass substrate, or a silicon substrate. The counter substrate 20 is also a transparent substrate made of the same material as the TFT array substrate 10, for example. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are provided in a seal material provided in a seal region around the image display region 10a. 52 are bonded to each other.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. Further, for example, in the sealing material 52, a gap material 56 such as a glass fiber or a glass bead for dispersing the distance (inter-substrate gap) between the TFT array substrate 10 and the counter substrate 20 to a predetermined value is dispersed. The liquid crystal device according to this embodiment is small and suitable for performing enlarged display for a light valve of a projector.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a is provided on the counter substrate 20 side in parallel with the inside of the seal area where the sealing material 52 is disposed. However, part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  On the TFT array substrate 10, a data line driving circuit 101, a sampling circuit 7, a scanning line driving circuit 104, and an external circuit connection terminal 102 are formed in the peripheral area located around the image display area 10 a.

  In the peripheral region on the TFT array substrate 10, the data line driving circuit 101 and the external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 on the outer peripheral side from the seal region. Further, a region located on the inner side of the seal region in the peripheral region on the TFT array substrate 10 is covered with the frame light shielding film 53 along one side of the image display region 10 a along one side of the TFT array substrate 10. Thus, the sampling circuit 7 is arranged.

  The scanning line driving circuit 104 is provided along two sides adjacent to one side of the TFT array substrate 10 so as to be covered with the frame light shielding film 53. Further, in order to electrically connect the two scanning line driving circuits 104 provided on both sides of the image display region 10a in this way, the TFT array substrate 10 is covered with the frame light shielding film 53 along the remaining side. A plurality of wirings 105 are provided.

  In the peripheral region on the TFT array substrate 10, vertical conduction terminals 106 are disposed in regions facing the four corners of the counter substrate 20, and vertical conduction is provided between the TFT array substrate 10 and the counter substrate 20. A material is provided corresponding to the vertical conduction terminal 106 and electrically connected to the terminal 106.

  In FIG. 2, on the TFT array substrate 10, a laminated structure in which pixel switching TFTs as drive elements, wiring lines such as scanning lines and data lines are formed is formed. In the image display area 10a, pixel electrodes 9a are provided in a matrix on the upper layer of wiring such as pixel switching TFTs, scanning lines, and data lines. In the present embodiment, the stacked structure on the TFT array substrate 10 also has a colored layer. An alignment film 16 is formed on the pixel electrode 9a. In the present embodiment, the pixel switching element may be constituted by various transistors, TFD, or the like in addition to the TFT.

  On the other hand, a light shielding film 23 is formed on the surface of the counter substrate 20 facing the TFT array substrate 10. The light shielding film 23 is formed of, for example, a light shielding metal film or the like, and is patterned, for example, in a lattice shape in the image display region 10a on the counter substrate 20. A counter electrode 21 made of a transparent material such as ITO is formed on the light shielding film 23 (below the light shielding film 23 in FIG. 2) so as to face the plurality of pixel electrodes 9a. An alignment film 22 is formed on the upper side (below the counter electrode 21 in FIG. 2).

  The liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films. A liquid crystal storage capacitor is formed between the pixel electrode 9 a and the counter electrode 21 by applying a voltage to each of the liquid crystal devices during driving.

  Although not shown here, on the TFT array substrate 10, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, a plurality of data lines are precharged at a predetermined voltage level prior to the image signal. A precharge circuit to be supplied, an inspection circuit for inspecting the quality, defects, etc. of the liquid crystal device during manufacture or at the time of shipment may be formed.

  Next, an electrical configuration of the pixel portion of the liquid crystal device according to the present embodiment will be described with reference to FIG. FIG. 3 is an equivalent circuit diagram of various elements, wirings, and the like in a plurality of pixels formed in a matrix forming the image display area of the liquid crystal device according to this embodiment.

  In FIG. 3, the plurality of pixel portions Px formed in a matrix that form the image display region 10a include, for example, three types of sub-pixel portions Psr, Psg, and Psb for R, G, and B, respectively. Although details will be described later, the R sub-pixel unit Psr includes a red coloring layer so that light corresponding to red among the three primary colors of red, green, and blue can be emitted, and the G sub-pixel unit Psg has a green colored layer so that light corresponding to green among the three primary colors can be emitted, and the B sub-pixel portion Psb can emit light corresponding to blue among the three primary colors. And a blue colored layer. The R, G, and B subpixel portions Psr, Psg, and Psb each preferably have substantially the same configuration. Accordingly, the colored layer itself preferably has substantially the same configuration in each of the R, G, and B sub-pixel portions Psr, Psg, and Psb. Hereinafter, each of the three types of sub-pixel portions Psr, Psg, and Psb for R, G, and B may be simply referred to as “sub-pixel portions” without being distinguished from each other.

  In FIG. 3, a pixel electrode 9a and a TFT 30 as an example of the “transistor” according to the present invention are formed in each of the sub-pixel portions Psr, Psg, and Psb. The TFT 30 is electrically connected to the pixel electrode 9a, and performs switching control of the pixel electrode 9a during operation of the liquid crystal device. The data line 6a to which the image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good.

  The scanning line 3a is electrically connected to the gate of the TFT 30, and the liquid crystal device according to the present embodiment applies the scanning signals G1, G2,..., Gm to the scanning line 3a in a pulsed manner in this order at a predetermined timing. It is configured to apply line-sequentially. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,..., Sn supplied from the data line 6a is obtained by closing the TFT 30 as a switching element for a certain period. It is written at a predetermined timing. Image signals S 1, S 2,..., Sn written in a liquid crystal as an example of an electro-optical material via the pixel electrode 9 a are held for a certain period with the counter electrode formed on the counter substrate.

  The liquid crystal constituting the liquid crystal layer 50 (see FIG. 2) modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The transmittance for light is increased, and light having a contrast corresponding to an image signal is emitted from the liquid crystal device as a whole.

  Further, in the sub-pixel portions Psr, Psg, and Psb, light corresponding to red, green, and blue is emitted through the colored layer, so that color display can be performed for each pixel portion Px.

  In order to prevent the image signal held here from leaking, a storage capacitor 70 is added electrically in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode 21 (see FIG. 2). ing. The storage capacitor 70 is a capacitive element that functions as a storage capacitor that temporarily holds the potential of each pixel electrode 9a in response to supply of an image signal. One electrode of the storage capacitor 70 is electrically connected in parallel with the pixel electrode 9a and connected to the drain of the TFT 30, and the other electrode is connected to a fixed potential capacitor line 300 so as to have a constant potential. According to the storage capacitor 70, the potential holding characteristic in the pixel electrode 9a is improved, and display characteristics such as contrast improvement and flicker reduction can be improved.

  Next, a specific configuration of the sub-pixel unit that realizes the above-described operation will be described with reference to FIGS. FIG. 4 is a plan view of the sub-pixel portion. FIG. 5 is a cross-sectional view taken along the line A-A ′ of FIG. 4. In FIGS. 4 and 5, the scale of each layer / member is different for each layer / member to have a size that can be recognized on the drawing. This also applies to each drawing described later. In FIG. 4 and FIG. 5, for convenience of explanation, illustration of a portion located above the pixel electrode 9a is omitted.

  In FIG. 4, a plurality of pixel electrodes 9 a are provided in a matrix on the TFT array substrate 10. Data lines 6a and scanning lines 3a are provided along the vertical and horizontal boundaries of the pixel electrode 9a. That is, the scanning line 3a extends along the X direction, and the data line 6a extends along the Y direction so as to intersect the scanning line 3a. A pixel switching TFT 30 is provided at each of the locations where the scanning line 3a and the data line 6a intersect each other.

  The scanning line 3a, the data line 6a, the storage capacitor 70, the lower light-shielding film 11a, the relay layer 93, and the TFT 30 are viewed on the TFT array substrate 10 in plan view, that is, an opening area of each pixel corresponding to the pixel electrode 9a (ie, In each pixel, the pixel is disposed in a non-opening region surrounding a region where light that actually contributes to display is transmitted or reflected. That is, the scanning line 3a, the data line 6a, the storage capacitor 70, the relay layer 93, the lower light shielding film 11a, and the TFT 30 are not in the opening area of each pixel but in the non-opening area so as not to disturb the display. Has been placed. On the other hand, a colored layer Cf is provided in the opening region together with the pixel electrode 9a.

  4 and 5, the TFT 30 includes a semiconductor layer 1a and a gate electrode 3b formed as a part of the scanning line 3a.

  The semiconductor layer 1a is formed of, for example, polysilicon with a film thickness of, for example, 50 nm. The semiconductor layer 1a includes a channel region 1a ′ having a channel length along the Y direction, a data line side LDD region 1b, a pixel electrode side LDD region 1c, a data line side source / drain region 1d, and a pixel electrode side source / drain region 1e. . That is, the TFT 30 has an LDD structure.

  The data line side source / drain region 1d and the pixel electrode side source / drain region 1e are formed substantially in mirror symmetry along the Y direction with respect to the channel region 1a '. The data line side LDD region 1b is formed between the channel region 1a 'and the data line side source / drain region 1d. The pixel electrode side LDD region 1c is formed between the channel region 1a 'and the pixel electrode side source / drain region 1e. The data line side LDD region 1b, the pixel electrode side LDD region 1c, the data line side source / drain region 1d, and the pixel electrode side source / drain region 1e are impurities formed by implanting impurities into the semiconductor layer 1a by, for example, ion implantation. It is an area. The data line side LDD region 1b and the pixel electrode side LDD region 1c are formed as low concentration impurity regions with less impurities than the data line side source / drain region 1d and the pixel electrode side source / drain region 1e, respectively. According to such an impurity region, when the TFT 30 is not operating, the off-current flowing between the source region and the drain region can be reduced, and a decrease in the on-current flowing when the TFT 30 is operating can be suppressed. The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which no impurity implantation is performed in the data line side LDD region 1b and the pixel electrode side LDD region 1c. A self-alignment type in which the data line side source / drain region and the pixel electrode side source / drain region are formed by implanting the concentration may be used.

  4 and 5, the gate electrode 3b is formed as a part of the scanning line 3a, for example, with a film thickness of 350 nm. The scanning line 3a is formed so as to extend along the X direction. A portion of the scanning line 3a that overlaps the channel region 1a 'functions as the gate electrode 3b. The gate electrode 3b and the semiconductor layer 1a are insulated by the gate insulating film 2.

  4 and 5, a lower light shielding film 11a is provided in a lattice pattern on the lower layer side of the TFT 30 on the TFT array substrate 10 with the base insulating film 12 interposed therebetween. The lower light-shielding film 11a is reflected from the back surface of the TFT array substrate 10 or light emitted from another liquid crystal device by a multi-plate projector or the like and penetrates the combined optical system, and enters the device from the TFT array substrate 10 side. The channel region 1a ′ of the TFT 30 and its surroundings are shielded from incident return light. The lower light shielding film 11a is formed with a film thickness of 200 nm, for example.

  In FIG. 5, the base insulating film 12 is an example of the “second insulating film” according to the present invention, and is formed on the entire surface of the TFT array substrate 10 in addition to the function of interlayer insulating the TFT 30 from the lower light-shielding film 11 a. Thus, the TFT array substrate 10 has a function of preventing deterioration of the characteristics of the pixel switching TFT 30 due to roughness during polishing of the surface of the TFT array substrate 10 and dirt remaining after cleaning.

  In the present embodiment, the base insulating film 12 protrudes toward the upper layer side in the region where the contact hole 85 for electrical connection between the pixel electrode 9a and the relay layer 93 is formed on the upper layer side. The 1st protrusion part 12a to be formed is formed. Also, two types of adjustment films 1f and 3c are stacked on the first projecting portion 12a. One of the two types of adjusting films 1f and 3c is formed of, for example, the same film as the semiconductor layer 1a, and the other of the two types of adjusting films 1f and 3c is formed of, for example, the gate electrode 3b. It is formed of the same film.

  By the first projecting portion 12a and the two kinds of adjusting films 1f and 3c, a convex portion 35 is formed in the region where the contact hole 85 is formed on the TFT array substrate 10.

  In FIG. 5, a storage capacitor 70 is provided on the upper layer side of the TFT 30 on the TFT array substrate 10 via the interlayer insulating film 41.

  The storage capacitor 70 is formed by disposing the lower capacitor electrode 71 and the upper capacitor electrode 300a so as to face each other with the dielectric film 75 therebetween.

  The upper capacitor electrode 300a is formed as a part of the capacitor line 300 shown in FIG. 3 or FIG. Although the detailed configuration of the capacitor line 300 is not shown, the capacitor line 300 extends from the image display region 10a in which the pixel electrode 9a is disposed to the periphery thereof. The upper capacitor electrode 300a is a fixed potential side capacitor electrode that is electrically connected to a constant potential source via the capacitor line 300 and maintained at a fixed potential.

  The lower capacitor electrode 71 is a pixel potential side capacitor electrode electrically connected to the pixel electrode side source / drain region 1e of the TFT 30 and the pixel electrode 9a. More specifically, the lower capacitor electrode 71 is electrically connected to the pixel electrode side source / drain region 1 e through the contact hole 83 and electrically connected to the relay layer 93 through the contact hole 84. Yes. Further, the relay layer 93 is electrically connected to the pixel electrode 9 a through the contact hole 85. That is, the lower capacitor electrode 71 relays the electrical connection between the pixel electrode side source / drain region 1e and the pixel electrode 9a together with the relay layer 93.

  In FIG. 5, a data line 6 a and a relay layer 93 are provided on the upper layer side of the storage capacitor 70 on the TFT array substrate 10 via the interlayer insulating film 42.

  The data line 6a is electrically connected to the data line side source / drain region 1d of the semiconductor layer 1a through a contact hole 81 penetrating the interlayer insulating film 41, the gate insulating film 2, the dielectric film 75, and the interlayer insulating film. Has been.

  The relay layer 93 is an example of the “conductive film” according to the present invention, and is formed in the same layer as the data line 6 a on the interlayer insulating film 42. The relay layer 93 is electrically connected to the lower capacitor electrode 71 through a contact hole 84 opened through the interlayer insulating film 42. For the data line 6a and the relay layer 93, a thin film made of a conductive material such as a metal film is formed on the interlayer insulating film 42 using a thin film forming method, and the thin film is partially removed, that is, patterned. Thus, they are formed apart from each other. Therefore, since the data line 6a and the relay layer 93 can be formed in the same process, the manufacturing process of the device can be simplified.

  As shown in FIGS. 4 and 5, a colored layer Cf is formed on the interlayer insulating film 43 in the opening region. Further, a passivation layer 44 as an example of the “first insulating film” according to the present invention is formed above the colored layer Cf. The upper surface of the passivation layer 44 is subjected to a planarization process such as CMP.

  In FIG. 5, the pixel electrode 9 a is formed on the passivation layer 44. The pixel electrode 9a is electrically connected to the pixel electrode side source / drain region 1e of the semiconductor layer 1a through the lower capacitor electrode 71, the contact holes 83, 84 and 85, and the relay layer 93.

  The contact hole 85 is opened through the passivation layer 44 and the interlayer insulating film 43. The surface of the relay layer 93 is exposed in the contact hole 85. A conductive material constituting the pixel electrode 9a such as ITO is formed on the inner wall of the contact hole 85, and the pixel electrode 9a and the relay layer 93 are electrically connected to each other.

  An alignment film subjected to a predetermined alignment process such as a rubbing process is provided on the upper surface of the pixel electrode 9a. In the present embodiment, as described above, since the upper surface of the passivation layer 44 is subjected to a planarization process such as CMP, it is possible to reduce the occurrence of unevenness on the surface of the alignment film provided on the pixel electrode 9a, for example. Thereby, generation | occurrence | production of the orientation defect of the liquid crystal molecule in the liquid crystal layer 50 (refer FIG. 2) can be suppressed.

  The configuration of the sub-pixel unit described above is common to each pixel unit as shown in FIG. In the image display region 10a (see FIG. 1), pixel portions including such sub-pixel portions are periodically formed as described with reference to FIG.

  Here, a comparative example with respect to the present embodiment will be described with reference to FIG. FIG. 6 is a cross-sectional view showing a configuration of a cross-sectional portion corresponding to FIG. 5 in the sub-pixel portion in the comparative example. Hereinafter, only differences from the configuration of the sub-pixel unit of the present embodiment described with reference to FIG. 4 or 5 will be described in detail, and the same configuration is the same as FIG. 4 or 5 in FIG. Reference numerals may be given and description thereof may be omitted.

  In the comparative example, the convex portion 35 described with reference to FIG. 4 or 5 is not provided. That is, in the region where the contact hole 85 is formed, the first projecting portion 12a as shown in FIG. 5 is not formed in the base insulating film 12, and the adjustment films 1f and 3c shown in FIG. 5 are not formed.

  Here, in FIG. 5 or FIG. 6, the colored layer Cf has a relatively large film thickness of, for example, about 1.5 μm. Therefore, in FIG. 6, the depth d1 of the contact hole 85 also becomes relatively large according to the film thickness of the colored layer Cf. Therefore, in order to set the aspect ratio of the contact hole 85 to about 1, it is necessary to adjust the diameter r1 of the contact hole to a relatively large value according to the depth d1 of the contact hole 85.

  However, when downsizing of the liquid crystal device is required, it is difficult to adjust the diameter r1 of the contact hole 85. For example, the diameter r1 of the contact hole 85 may be required to be 1 μm or less. Therefore, a situation occurs in which the aspect ratio in the contact hole 85 has to be higher than 1, which causes a problem of increasing the contact resistance. As a result, problems such as insufficient supply of image signals to the pixel electrodes 9a occur, and the display quality of the liquid crystal device may also deteriorate.

  On the other hand, in this embodiment, in FIG. 5, at least the contact hole of the relay layer 93 is perpendicular to the substrate surface of the TFT array substrate 10, that is, in the thickness direction of the laminated structure in which the pixel electrode 9a and the like are formed. A portion that is electrically connected to the pixel electrode 9 a via 85 is disposed at a relatively high position toward the upper layer side by the height of the convex portion 35. Therefore, as compared with the configuration of the comparative example as shown in FIG. 6, the bottom of the contact hole 85 can be disposed at a relatively high position toward the upper layer side according to the position of the relay layer 93. Become. Therefore, the depth d0 of the contact hole 85 can be adjusted by adjusting the film thickness of the adjustment film 1f or 3c in addition to or instead of the height of the protrusion 35, that is, the height of the first protrusion 12a. It becomes possible.

  Therefore, even when it is difficult to adjust the diameter r0 of the contact hole 85, the aspect ratio can be adjusted more easily by adjusting the depth d0 of the contact hole 85. As a result, the contact resistance in the contact hole 85 can be adjusted by setting the aspect ratio to 1 or less. Therefore, it is possible to prevent the contact resistance from increasing by adjusting the aspect ratio to be low.

  Here, the two types of adjusting films 1f and 3c are formed of the same film as each of the semiconductor layer 1a and the gate electrode 3b, as already described. Therefore, since the two types of adjusting films 1f and 3c can be formed at the same opportunity as the TFT 30, the stacked structure in the sub-pixel portion and the manufacturing process thereof can be further simplified.

  According to the present embodiment as described above, the liquid crystal device can be more easily downsized and the display quality can be prevented from being deteriorated by increasing the contact resistance.

  Next, a method for manufacturing the liquid crystal device according to this embodiment described above will be described with reference to FIGS. FIG. 7 and FIG. 8 are step diagrams sequentially showing the configuration of the cross section shown in FIG. 5 in each step of the manufacturing process. In the following, the manufacturing process of the data line 6a, the scanning line 3a, the TFT 30, the storage capacitor 70 and the like formed on the TFT array substrate 10 in the sub-pixel portion will be described in detail. Description of the manufacturing process and the like of the alignment film 22 and the counter electrode 21 formed in will be omitted.

  7A, after the lower light-shielding film 11a is formed on the TFT array substrate 10, the base insulating film 12 is formed by atmospheric pressure or reduced pressure CVD. Thereafter, for example, a photolithography method and an etching process are performed on the base insulating film 12 to form the first protrusion 12a in the region where the contact hole 85 described above with reference to FIGS. 4 and 5 is formed.

  Subsequently, in the process of FIG. 7B, the semiconductor layer 1a, the gate insulating film 2, and the scanning line 3a are sequentially formed. At this time, the gate electrode 3b is integrally formed as a part of the scanning line 3a, and the TFT 30 is formed. In each step, a normal semiconductor integration technique can be used. Further, on the same occasion as the TFT 30, two types of adjustment films 1f and 3c are formed in a region where the contact hole 85 described above with reference to FIGS. 4 and 5 is formed.

  Subsequently, in the process of FIG. 7C, after the interlayer insulating film 41 is formed on the entire surface of the TFT array substrate 10, the storage capacitor 70 is formed. More specifically, after the contact hole 83 is opened in the interlayer insulating film 41, the lower capacitor electrode 71, the dielectric film 75, and the upper capacitor electrode 300a are sequentially formed. At this time, the lower capacitor electrode 71 is connected to the pixel electrode side source / drain region 1 e through the contact hole 83. Further, the capacitor line 300 (see FIGS. 3 and 4) is formed integrally with the upper capacitor electrode 300a.

  8A, after the interlayer insulating film 42 is formed on the entire surface of the TFT array substrate 10, the contact holes 81 and 84 are opened, and the data line 6a and the relay layer 93 are formed. The data line 6a is connected to the data line side source / drain region 1d through a contact hole 81. The relay layer 93 is connected to the lower capacitor electrode 71 through a contact hole 84.

  8B, after forming the interlayer insulating film 43 on the entire surface of the TFT array substrate 10, the colored layer Cf is formed. Thereafter, a passivation layer 44 is formed. At this time, a planarization process such as CPM is performed on the upper surface of the passivation layer 44. Thereafter, a contact hole 85 is opened, and subsequently a pixel electrode 9a (see FIG. 5) is formed. By forming the pixel electrode 9 a also in the contact hole 85, the pixel electrode 9 a is electrically connected to the relay layer 93.

According to the liquid crystal device manufacturing method described above, the liquid crystal device according to the present embodiment described above can be manufactured. In particular, since the adjustment films 1f and 3c and the first protrusions 12a in the base insulating film 12 are formed, the contact holes are temporarily compared to the case where the adjustment films 1f and 3c and the first protrusions are not formed. The depth of 85 can be reduced. Therefore, for example, even if the diameter of the contact hole 85 is reduced in order to improve the aperture ratio in the liquid crystal device or to reduce the size of the liquid crystal device, the aspect ratio can be made relatively low, and the contact resistance is prevented from increasing. it can.
<Modification>
Next, a modified example of the above-described embodiment will be described.

  In the sub-pixel portion described with reference to FIG. 4 or FIG. 5, the convex portion 35 may be formed only on one of the first protruding portion 12a and the adjustment film 1f or 3c. The adjustment film is formed of the same film as the lower light-shielding film 11a in addition to or instead of being formed of the same film as the film constituting the TFT 30 (for example, the semiconductor layer 1a and the gate electrode 3b) as described above. You may be made to do. Alternatively, the adjustment film may be formed separately from a predetermined material different from various films constituting the sub-pixel portion.

  In addition, the “second insulating film” according to the present invention is, for example, an interlayer insulating film 41 instead of the base insulating film 12, and the first projecting portion preferably has the same structure as that shown in FIG. May be provided.

  FIG. 9 is a cross-sectional view showing a configuration of a cross-sectional portion corresponding to FIG. 5 for one configuration according to this modification.

  As shown in FIG. 9, in the region where the contact hole 85 is formed in the TFT array substrate 10, a second protruding portion that protrudes toward the upper layer side is formed as a convex portion 35 instead of the configuration shown in FIG. 5, for example. You may make it do. Alternatively, the second protruding portion of the TFT array substrate 10 may be formed so as to be included in the convex portion 35 in addition to the configuration shown in FIG.

  If comprised in this way, it will become possible to adjust the height of the convex part 35 and to adjust the depth of the contact hole 85 by adjusting the height of a 2nd protrusion part.

  FIG. 10 is a process diagram showing the manufacturing process according to one configuration of the present modification shown in FIG. 9 in order as in FIGS. 7 and 8, focusing on the steps different from the present embodiment.

  In the process of FIG. 10A, the TFT array substrate 10 is subjected to, for example, a photolithography method and an etching process, and the protrusion 35 is formed as a second protrusion in the region where the contact hole 85 shown in FIG. 9 is formed. Form.

  Subsequently, in the process of FIG. 10B, the lower light shielding film 11a and the base insulating film 12 are formed.

Subsequently, in the process of FIG. 10C, the TFT 30 is formed. Thereafter, similar to the procedure described with reference to FIG. 7 or FIG. 8, the interlayer insulating film 41, the storage capacitor 70, and the like are formed.
<Electronic equipment>
Next, the case where the liquid crystal device which is the above-described electro-optical device is applied to various electronic devices will be described. FIG. 11 is a plan view showing a configuration example of the projector. Hereinafter, a projector using the liquid crystal device as a light valve will be described.

  As shown in FIG. 11, a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G are the same as those of the liquid crystal device described above, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Therefore, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  In addition to the electronic device described with reference to FIG. 11, a mobile personal computer, a mobile phone, a liquid crystal television, a viewfinder type, a monitor direct view type video tape recorder, a car navigation device, a pager, and an electronic notebook , Calculators, word processors, workstations, videophones, POS terminals, devices with touch panels, and the like. Needless to say, the present invention can be applied to these various electronic devices.

  In addition to the liquid crystal devices described in the above embodiments, the present invention can be applied to a reflective liquid crystal device (LCOS) or the like.

  The present invention is not limited to the above-described embodiments, and can be appropriately changed without departing from the spirit or concept of the invention that can be read from the claims and the entire specification. The manufacturing method and the electronic apparatus provided with the electro-optical device are also included in the technical scope of the present invention.

1 is a schematic plan view of a liquid crystal device according to a first embodiment. It is HH 'sectional drawing of FIG. 3 is an equivalent circuit diagram of a plurality of pixel units of the liquid crystal device according to the first embodiment. FIG. 3 is a plan view of a sub-pixel unit of the liquid crystal device according to the first embodiment. FIG. FIG. 5 is a cross-sectional view taken along line A-A ′ of FIG. 4. It is sectional drawing which shows the structure of the cross-sectional part corresponding to FIG. 5 in a sub pixel part about a comparative example. It is process drawing (the 1) which shows the structure of the cross section shown in FIG. 5 in each process of a manufacturing process later on. FIG. 6 is a process diagram (part 2) illustrating the configuration of the cross section illustrated in FIG. 5 in each step of the manufacturing process in order. It is sectional drawing which shows the structure of the cross-sectional part corresponding to FIG. 5 about one structure which concerns on this modification. FIG. 10 is a process diagram illustrating the manufacturing process according to the one configuration according to the present modification illustrated in FIG. 9 in the same manner as in FIGS. 7 and 8, focusing on processes different from the present embodiment. It is a top view which shows the structure of the projector which is an example of the electronic device to which a liquid crystal device is applied.

Explanation of symbols

  1f, 3c ... adjustment film, 12a ... first projection, 9a ... pixel electrode, 10 ... TFT array substrate, 35 ... projection, 43 ... interlayer insulation film, 44 ... passivation layer, 85 ... contact hole, 93 ... relay layer , Px: pixel portion, Psr, Psg, Psb: sub-pixel portion, Cf: colored layer

Claims (6)

A substrate,
A pixel electrode;
A first insulating film provided between the pixel electrode and the substrate;
A colored layer formed between the first insulating film and the substrate;
A first interlayer insulating film disposed between the colored layer and the substrate and between the first insulating film and the substrate;
A second interlayer insulating film disposed between the first interlayer insulating film and the substrate;
A first conductive film disposed between the first interlayer insulating film and the second interlayer insulating film;
An adjustment formed between the conductive film and the substrate in a region where a first contact hole opened through the first insulating film as viewed from the pixel electrode toward the substrate is formed. A membrane,
A transistor electrically connected to the pixel electrode through the first conductive film and the first contact hole;
With
The pixel electrode and the conductive film are electrically connected through the first contact hole,
When viewed from the direction from the pixel electrode toward the substrate, the adjustment film is not provided in a region overlapping the colored layer,
The colored layer has a first surface on the first insulating film side and a second surface on the substrate side;
The distance between the bottom of the substrate and the first contact hole is smaller than the distance between the substrate and the first surface, rather greater than the distance between the substrate and the second surface,
The first conductive film is electrically connected to the second conductive film through a second contact hole opened through the first interlayer insulating film,
The second conductive film is electrically connected to the transistor;
The adjustment film is disposed in a region where a second contact hole opened through the first interlayer insulating film is formed when viewed from the pixel electrode toward the substrate. Electro-optic device. A second insulating film formed between the first conductive film and the substrate;
The second insulating film is directed toward the pixel electrode in a region where a first contact hole opened through the first insulating film is formed as viewed from the pixel electrode toward the substrate. The electro-optical device according to claim 1 , further comprising a first projecting portion projecting out. The substrate protrudes toward the pixel electrode in a region where a first contact hole opened through the first insulating film as viewed from the pixel electrode toward the substrate is formed. the electro-optical device according to claim 1 or 2, characterized in that it has a second projecting portion. A substrate,
A pixel electrode;
A first insulating film provided between the pixel electrode and the substrate;
A colored layer formed between the first insulating film and the substrate;
A first interlayer insulating film disposed between the colored layer and the substrate and between the first insulating film and the substrate;
A second interlayer insulating film disposed between the first interlayer insulating film and the substrate;
A first conductive film disposed between the first interlayer insulating film and the second interlayer insulating film;
A second insulating film formed between the first conductive film and the substrate;
A transistor electrically connected to the pixel electrode through the first conductive film and the first contact hole;
With
The second insulating film is directed toward the pixel electrode in a region where a first contact hole opened through the first insulating film is formed as viewed from the pixel electrode toward the substrate. A first projecting portion projecting
The pixel electrode and the first conductive film are electrically connected through the first contact hole,
When viewed from the direction from the pixel electrode toward the substrate, the first protrusion is not provided in a region overlapping the colored layer,
The colored layer has a first surface on the first insulating film side and a second surface on the substrate side;
The distance between the bottom of the substrate and the contact hole is smaller than the distance between the substrate and the first surface, rather greater than the distance between the substrate and the second surface,
The first conductive film is electrically connected to the second conductive film through a second contact hole opened through the first interlayer insulating film,
The second conductive film is electrically connected to the transistor;
The first protrusion is disposed in a region where a second contact hole opened through the first interlayer insulating film is formed as viewed from the pixel electrode toward the substrate. An electro-optical device. A substrate,
A pixel electrode;
A first insulating film provided between the pixel electrode and the substrate;
A colored layer formed between the first insulating film and the substrate;
A first interlayer insulating film disposed between the colored layer and the substrate and between the first insulating film and the substrate;
A second interlayer insulating film disposed between the first interlayer insulating film and the substrate;
A first conductive film disposed between the first interlayer insulating film and the second interlayer insulating film;
A transistor electrically connected to the pixel electrode;
With
The substrate protrudes toward the pixel electrode in a region where a first contact hole opened through the first insulating film as viewed from the pixel electrode toward the substrate is formed. Having a second protrusion,
The pixel electrode and the first conductive film are electrically connected through the first contact hole,
When viewed from the direction from the pixel electrode toward the substrate, the second protrusion is not provided in a region overlapping the colored layer,
The colored layer has a first surface on the first insulating film side and a second surface on the substrate side;
The distance between the bottom of the substrate and the first contact hole is smaller than the distance between the substrate and the first surface, rather greater than the distance between the substrate and the second surface,
The first conductive film is electrically connected to the second conductive film through a second contact hole opened through the first interlayer insulating film,
The second conductive film is electrically connected to the transistor;
The second protrusion is disposed in a region where a second contact hole opened through the first interlayer insulating film is formed as viewed from the pixel electrode toward the substrate. An electro-optical device. An electronic device characterized by being provided with the electro-optical device according to claim 1, any one of 5.

Images