JP5296380B2 - プラズマ加工ステップセットの調整方法 - Google Patents
プラズマ加工ステップセットの調整方法 Download PDFInfo
- Publication number
- JP5296380B2 JP5296380B2 JP2007533634A JP2007533634A JP5296380B2 JP 5296380 B2 JP5296380 B2 JP 5296380B2 JP 2007533634 A JP2007533634 A JP 2007533634A JP 2007533634 A JP2007533634 A JP 2007533634A JP 5296380 B2 JP5296380 B2 JP 5296380B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- substrate
- etching
- uniform ring
- plasma processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims description 56
- 238000000034 method Methods 0.000 title claims description 55
- 239000000758 substrate Substances 0.000 claims description 109
- 238000005530 etching Methods 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 36
- 230000008569 process Effects 0.000 claims description 21
- 238000001020 plasma etching Methods 0.000 claims description 11
- 238000003486 chemical etching Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004809 Teflon Substances 0.000 claims description 3
- 229920006362 Teflon® Polymers 0.000 claims description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004033 plastic Substances 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 36
- 230000007935 neutral effect Effects 0.000 description 28
- 239000007789 gas Substances 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000376 reactant Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000001311 chemical methods and process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B44—DECORATIVE ARTS
- B44C—PRODUCING DECORATIVE EFFECTS; MOSAICS; TARSIA WORK; PAPERHANGING
- B44C1/00—Processes, not specifically provided for elsewhere, for producing decorative surface effects
- B44C1/22—Removing surface-material, e.g. by engraving, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/006—Other surface treatment of glass not in the form of fibres or filaments by irradiation by plasma or corona discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Geochemistry & Mineralogy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
エッチング速度=
エッチング時間
図1
均一性は一般的にエッチングプロセス前後の選択ポイントで厚みを測定することによる基板厚マッピングと、これら選択ポイントでのエッチング速度の計算により測定される。測定平均値は次の式で表される。
xは基板上の特定ポイントのエッチング速度であり、Nは全ポイント数である。
例えば、基板の1領域は他の領域よりも速くエッチングされる。一般的に、非均一エッチングはトレンチ側壁のアンダーカットを引き起こす。典型的にはアンダーカットは導電線の太さを減少させ、場合によっては導電線破断を引き起こし、装置を故障させる。さらに非均一エッチングは一般的にエッチングプロセス時間を長くし、プロセス効率を低下させる。
Claims (18)
- プラズマ加工システムで利用するプラズマ加工ステップを調整する方法であって、
プラズマ加工システムのプラズマ反応器内で、化学エッチングを実行すべく構成された第1プラズマをストライク処理するステップと、
前記基板周囲に可動均一リングを、前記可動均一リングの底面が前記基板の上面と略同一の高さとなるように配置するステップと、
基板上の複数層を第1エッチングステップで化学エッチングするステップと、
前記基板周囲に可動均一リングを、前記可動均一リングの底面が前記基板の上面に対して異なる高さとなるように再設置するステップと、
前記プラズマ加工システムの前記プラズマ反応器内で、前記第1プラズマと異なる、反応性エッチングを実行すべく構成された第2プラズマをストライク処理するステップと、
前記基板上の前記複数層を第2エッチングステップで反応性イオンエッチングするステップと、
を含んでおり、
前記可動均一リングが第1エッチングステップ中及び第2エッチングステップ中に加熱されることを特徴とする方法。 - プラズマ反応器を洗浄するステップが第1プラズマのストライク処理ステップに先立って実施されることを特徴とする請求項1記載の方法。
- プラズマ反応器を洗浄するステップは無ウェハ自動洗浄プロセスを含んでいることを特徴とする請求項2記載の方法。
- 可動均一リングはプラズマ攻撃に対して抵抗性である材料を含んでいることを特徴とする請求項1記載の方法。
- 材料は水晶を含んでいることを特徴とする請求項4記載の方法。
- 材料はY2O3を含んでいることを特徴とする請求項4記載の方法。
- 材料はイットリウムを含んでいることを特徴とする請求項4記載の方法。
- 材料はCeO2を含んでいることを特徴とする請求項4記載の方法。
- 材料はセリウムを含んでいることを特徴とする請求項4記載の方法。
- 材料はAlO3を含んでいることを特徴とする請求項4記載の方法。
- 材料はアルミニウムを含んでいることを特徴とする請求項4記載の方法。
- 材料はZrO2を含んでいることを特徴とする請求項4記載の方法。
- 材料はジルコニウムを含んでいることを特徴とする請求項4記載の方法。
- 可動均一リングは、第1プラズマと第2プラズマとに曝露されたとき、揮発性エッチング生成物を発生させる材料を含んでいることを特徴とする請求項1記載の方法。
- 材料はテフロン(登録商標)を含んでいることを特徴とする請求項4記載の方法。
- 材料はベスペル(登録商標)を含んでいることを特徴とする請求項4記載の方法。
- 材料は実質的に純粋なプラスチックを含んでいることを特徴とする請求項14記載の方法。
- 材料はセラミックを含んでいることを特徴とする請求項4記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/951,552 | 2004-09-27 | ||
US10/951,552 US7138067B2 (en) | 2004-09-27 | 2004-09-27 | Methods and apparatus for tuning a set of plasma processing steps |
PCT/US2005/034034 WO2006036753A2 (en) | 2004-09-27 | 2005-09-21 | Methods and apparatus for tuning a set of plasma processing steps |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012230581A Division JP2013058766A (ja) | 2004-09-27 | 2012-10-18 | プラズマ加工ステップセットの調整方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008515193A JP2008515193A (ja) | 2008-05-08 |
JP5296380B2 true JP5296380B2 (ja) | 2013-09-25 |
Family
ID=36097834
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007533634A Expired - Fee Related JP5296380B2 (ja) | 2004-09-27 | 2005-09-21 | プラズマ加工ステップセットの調整方法 |
JP2012230581A Withdrawn JP2013058766A (ja) | 2004-09-27 | 2012-10-18 | プラズマ加工ステップセットの調整方法及び装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012230581A Withdrawn JP2013058766A (ja) | 2004-09-27 | 2012-10-18 | プラズマ加工ステップセットの調整方法及び装置 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7138067B2 (ja) |
JP (2) | JP5296380B2 (ja) |
KR (1) | KR101164829B1 (ja) |
CN (1) | CN101076456B (ja) |
SG (1) | SG155982A1 (ja) |
TW (1) | TWI375735B (ja) |
WO (1) | WO2006036753A2 (ja) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7578945B2 (en) * | 2004-09-27 | 2009-08-25 | Lam Research Corporation | Method and apparatus for tuning a set of plasma processing steps |
US7988872B2 (en) | 2005-10-11 | 2011-08-02 | Applied Materials, Inc. | Method of operating a capacitively coupled plasma reactor with dual temperature control loops |
US8092638B2 (en) | 2005-10-11 | 2012-01-10 | Applied Materials Inc. | Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution |
US8034180B2 (en) | 2005-10-11 | 2011-10-11 | Applied Materials, Inc. | Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor |
US8157951B2 (en) | 2005-10-11 | 2012-04-17 | Applied Materials, Inc. | Capacitively coupled plasma reactor having very agile wafer temperature control |
US20070091540A1 (en) | 2005-10-20 | 2007-04-26 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control |
US7871933B2 (en) * | 2005-12-01 | 2011-01-18 | International Business Machines Corporation | Combined stepper and deposition tool |
US8635971B2 (en) * | 2006-03-31 | 2014-01-28 | Lam Research Corporation | Tunable uniformity in a plasma processing system |
US8715455B2 (en) * | 2007-02-06 | 2014-05-06 | Tokyo Electron Limited | Multi-zone gas distribution system for a treatment system |
KR101490439B1 (ko) | 2007-11-14 | 2015-02-12 | 주성엔지니어링(주) | 기판처리장치 및 기판처리방법 |
US8575843B2 (en) * | 2008-05-30 | 2013-11-05 | Colorado State University Research Foundation | System, method and apparatus for generating plasma |
WO2009146432A1 (en) * | 2008-05-30 | 2009-12-03 | Colorado State University Research Foundation | Plasma-based chemical source device and method of use thereof |
US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
US8222822B2 (en) * | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
JP2013529352A (ja) | 2010-03-31 | 2013-07-18 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 液体−気体界面プラズマデバイス |
EP2552340A4 (en) | 2010-03-31 | 2015-10-14 | Univ Colorado State Res Found | PLASMA DEVICE WITH LIQUID GAS INTERFACE |
US9039911B2 (en) * | 2012-08-27 | 2015-05-26 | Lam Research Corporation | Plasma-enhanced etching in an augmented plasma processing system |
US9532826B2 (en) | 2013-03-06 | 2017-01-03 | Covidien Lp | System and method for sinus surgery |
US9555145B2 (en) | 2013-03-13 | 2017-01-31 | Covidien Lp | System and method for biofilm remediation |
US9245761B2 (en) | 2013-04-05 | 2016-01-26 | Lam Research Corporation | Internal plasma grid for semiconductor fabrication |
WO2015099892A1 (en) * | 2013-12-23 | 2015-07-02 | Applied Materials, Inc. | Extreme edge and skew control in icp plasma reactor |
US10658222B2 (en) * | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
WO2017131927A1 (en) | 2016-01-26 | 2017-08-03 | Applied Materials, Inc. | Wafer edge ring lifting solution |
US9947517B1 (en) | 2016-12-16 | 2018-04-17 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
US11075105B2 (en) | 2017-09-21 | 2021-07-27 | Applied Materials, Inc. | In-situ apparatus for semiconductor process module |
JP6966286B2 (ja) * | 2017-10-11 | 2021-11-10 | 東京エレクトロン株式会社 | プラズマ処理装置、フォーカスリングの昇降制御方法およびフォーカスリングの昇降制御プログラム |
US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
US10790123B2 (en) | 2018-05-28 | 2020-09-29 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
US11935773B2 (en) | 2018-06-14 | 2024-03-19 | Applied Materials, Inc. | Calibration jig and calibration method |
US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
US11101115B2 (en) | 2019-04-19 | 2021-08-24 | Applied Materials, Inc. | Ring removal from processing chamber |
US12009236B2 (en) | 2019-04-22 | 2024-06-11 | Applied Materials, Inc. | Sensors and system for in-situ edge ring erosion monitor |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02211626A (ja) * | 1989-02-13 | 1990-08-22 | Hitachi Ltd | プラズマクリーニング方法 |
JP2638443B2 (ja) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
US5993594A (en) * | 1996-09-30 | 1999-11-30 | Lam Research Corporation | Particle controlling method and apparatus for a plasma processing chamber |
US5740009A (en) * | 1996-11-29 | 1998-04-14 | Applied Materials, Inc. | Apparatus for improving wafer and chuck edge protection |
EP0849983B1 (en) * | 1996-12-20 | 2001-10-24 | Alcatel | Process to create metallic stand-offs on a circuit board |
JP3247079B2 (ja) * | 1997-02-06 | 2002-01-15 | 松下電器産業株式会社 | エッチング方法及びエッチング装置 |
US5998932A (en) * | 1998-06-26 | 1999-12-07 | Lam Research Corporation | Focus ring arrangement for substantially eliminating unconfined plasma in a plasma processing chamber |
US6257168B1 (en) * | 1999-06-30 | 2001-07-10 | Lam Research Corporation | Elevated stationary uniformity ring design |
US6344105B1 (en) * | 1999-06-30 | 2002-02-05 | Lam Research Corporation | Techniques for improving etch rate uniformity |
JP3810248B2 (ja) * | 2000-03-27 | 2006-08-16 | 信越化学工業株式会社 | プラズマ処理装置用シリコンリング |
JP2002261084A (ja) * | 2001-03-05 | 2002-09-13 | Matsushita Electric Ind Co Ltd | ドライエッチング方法及び装置 |
TW567554B (en) * | 2001-08-08 | 2003-12-21 | Lam Res Corp | All dual damascene oxide etch process steps in one confined plasma chamber |
-
2004
- 2004-09-27 US US10/951,552 patent/US7138067B2/en active Active
-
2005
- 2005-09-21 KR KR1020077006729A patent/KR101164829B1/ko active IP Right Grant
- 2005-09-21 CN CN2005800324052A patent/CN101076456B/zh active Active
- 2005-09-21 JP JP2007533634A patent/JP5296380B2/ja not_active Expired - Fee Related
- 2005-09-21 WO PCT/US2005/034034 patent/WO2006036753A2/en active Application Filing
- 2005-09-21 SG SG200906413-0A patent/SG155982A1/en unknown
- 2005-09-23 TW TW094133162A patent/TWI375735B/zh not_active IP Right Cessation
-
2012
- 2012-10-18 JP JP2012230581A patent/JP2013058766A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2008515193A (ja) | 2008-05-08 |
CN101076456B (zh) | 2010-06-16 |
KR20070060093A (ko) | 2007-06-12 |
CN101076456A (zh) | 2007-11-21 |
US20060065628A1 (en) | 2006-03-30 |
KR101164829B1 (ko) | 2012-07-11 |
US7138067B2 (en) | 2006-11-21 |
SG155982A1 (en) | 2009-10-29 |
WO2006036753A3 (en) | 2007-01-25 |
TW200624601A (en) | 2006-07-16 |
JP2013058766A (ja) | 2013-03-28 |
TWI375735B (en) | 2012-11-01 |
WO2006036753A2 (en) | 2006-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5296380B2 (ja) | プラズマ加工ステップセットの調整方法 | |
US9659756B2 (en) | Plasma etching apparatus and plasma cleaning method | |
TWI673791B (zh) | 高深寬比結構中的接觸窗清洗 | |
US9773648B2 (en) | Dual discharge modes operation for remote plasma | |
US9087798B2 (en) | Etching method | |
US5707485A (en) | Method and apparatus for facilitating removal of material from the backside of wafers via a plasma etch | |
JP2918892B2 (ja) | プラズマエッチング処理方法 | |
CN106057666B (zh) | 蚀刻方法 | |
EP1108263B1 (en) | Elevated stationary uniformity ring | |
US10770268B2 (en) | Plasma processing method and plasma processing apparatus | |
EP2991103A1 (en) | Etching method | |
KR102099408B1 (ko) | 플라즈마 에칭 방법 및 플라즈마 에칭 장치 | |
KR20090031624A (ko) | 다중 주파수 rf 전력을 이용한 하이브리드 rf 용량 및 유도 결합형 플라즈마 소스 및 그 사용 방법 | |
JP2008526026A (ja) | プラズマ処理システムにおける副生成物堆積減少方法並びに構造 | |
EP3206223A1 (en) | Plasma processing method and plasma processing apparatus | |
US9818582B2 (en) | Plasma processing method | |
US7578945B2 (en) | Method and apparatus for tuning a set of plasma processing steps | |
US7682978B2 (en) | Plasma processing method and high-rate plasma etching apparatus | |
US7488689B2 (en) | Plasma etching method | |
US11610766B2 (en) | Target object processing method and plasma processing apparatus | |
TWI759348B (zh) | 被處理體之處理方法 | |
TW202223986A (zh) | 蝕刻裝置及蝕刻方法 | |
WO1999013489A2 (en) | Apparatus for improving etch uniformity and methods therefor | |
TW202404425A (zh) | 電漿處置系統 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080912 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110513 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110517 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110816 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110823 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110915 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110926 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20111017 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20111024 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111117 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120524 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120619 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20121015 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121018 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20121015 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121205 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20121211 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130305 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130521 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130613 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5296380 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: R3D02 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |