JP5281922B2 - パルスレーザ装置 - Google Patents
パルスレーザ装置 Download PDFInfo
- Publication number
- JP5281922B2 JP5281922B2 JP2009042347A JP2009042347A JP5281922B2 JP 5281922 B2 JP5281922 B2 JP 5281922B2 JP 2009042347 A JP2009042347 A JP 2009042347A JP 2009042347 A JP2009042347 A JP 2009042347A JP 5281922 B2 JP5281922 B2 JP 5281922B2
- Authority
- JP
- Japan
- Prior art keywords
- medium
- excitation light
- laser
- light source
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0602—Crystal lasers or glass lasers
- H01S3/0604—Crystal lasers or glass lasers in the form of a plate or disc
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
- H01S3/09415—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode the pumping beam being parallel to the lasing mode of the pumped medium, e.g. end-pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10084—Frequency control by seeding
- H01S3/10092—Coherent seed, e.g. injection locking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1611—Solid materials characterised by an active (lasing) ion rare earth neodymium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1618—Solid materials characterised by an active (lasing) ion rare earth ytterbium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Lasers (AREA)
Description
Claims (6)
- 励起光が供給されることで放出光を発生させるアンプ媒質およびレーザ媒質と、
光吸収の飽和により光吸収率が小さくなる可飽和吸収体と、
前記励起光を透過させ、前記放出光の一部を透過させ残部を反射させる第1反射部と、
前記放出光を反射させる第2反射部と、
前記励起光を出力する励起光源と、
前記励起光源から出力された励起光を前記アンプ媒質へ入射させ、前記アンプ媒質から出力された前記放出光を前記励起光の光路とは異なる光路へ導く光学系と、
を備え、
前記第1反射部および前記第2反射部が、前記レーザ媒質および前記可飽和吸収体を共振光路上に有するレーザ共振器を構成し、
前記アンプ媒質,前記第1反射部,前記レーザ媒質,前記可飽和吸収体および前記第2反射部が順に配置されて一体化されている、
ことを特徴とするパルスレーザ装置。 - 前記レーザ媒質と前記可飽和吸収体との間に設けられ、前記励起光を反射させ、前記放出光を透過させる第3反射部を更に備えることを特徴とする請求項1に記載のパルスレーザ装置。
- 前記第1反射部が誘電体多層膜からなり、
前記アンプ媒質と前記レーザ媒質とが前記第1反射部を挟んでダイレクトボンディングされている、
ことを特徴とする請求項1に記載のパルスレーザ装置。 - 前記アンプ媒質または前記レーザ媒質において光吸収により生じた熱を拡散させる熱拡散部を更に備えることを特徴とする請求項1に記載のパルスレーザ装置。
- 前記アンプ媒質が、励起光の偏光方位に依存した励起光吸収特性を有し、
前記光学系が、前記励起光源から出力されて前記アンプ媒質へ入射される励起光の偏光状態を調整する偏光調整部を含む、
ことを特徴とする請求項1に記載のパルスレーザ装置。 - 前記レーザ媒質が、励起光の偏光方位に依存した励起光吸収特性を有し、
前記光学系が、前記励起光源から出力されて前記アンプ媒質へ入射される励起光の偏光状態を調整する偏光調整部を含む、
ことを特徴とする請求項1に記載のパルスレーザ装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009042347A JP5281922B2 (ja) | 2009-02-25 | 2009-02-25 | パルスレーザ装置 |
US12/686,637 US20100215063A1 (en) | 2009-02-25 | 2010-01-13 | Pulse laser apparatus |
CN201010121454A CN101867146A (zh) | 2009-02-25 | 2010-02-24 | 脉冲激光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009042347A JP5281922B2 (ja) | 2009-02-25 | 2009-02-25 | パルスレーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010199288A JP2010199288A (ja) | 2010-09-09 |
JP5281922B2 true JP5281922B2 (ja) | 2013-09-04 |
Family
ID=42630931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009042347A Expired - Fee Related JP5281922B2 (ja) | 2009-02-25 | 2009-02-25 | パルスレーザ装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100215063A1 (ja) |
JP (1) | JP5281922B2 (ja) |
CN (1) | CN101867146A (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5454080B2 (ja) * | 2008-10-23 | 2014-03-26 | 住友電気工業株式会社 | レーザ加工方法およびレーザ加工装置 |
JP2014135421A (ja) * | 2013-01-11 | 2014-07-24 | Hamamatsu Photonics Kk | 固体レーザデバイス及びその製造方法 |
CN106299984A (zh) * | 2016-09-12 | 2017-01-04 | 北京大学 | 一种集成化调q激光器及其控制方法 |
JP6245587B1 (ja) * | 2016-10-28 | 2017-12-13 | 大学共同利用機関法人自然科学研究機構 | レーザー部品 |
JP2018152539A (ja) * | 2017-03-15 | 2018-09-27 | 株式会社リコー | レーザ装置、点火装置および内燃機関 |
US10622780B2 (en) * | 2018-06-22 | 2020-04-14 | Candela Corporation | Handpiece with a microchip laser |
WO2020137136A1 (ja) * | 2018-12-25 | 2020-07-02 | ソニー株式会社 | レーザ装置 |
JP7548243B2 (ja) | 2019-11-28 | 2024-09-10 | ソニーグループ株式会社 | レーザ素子、レーザ素子の製造方法、レーザ装置およびレーザ増幅素子 |
JPWO2022249581A1 (ja) * | 2021-05-26 | 2022-12-01 | ||
CN116667122A (zh) * | 2023-07-31 | 2023-08-29 | 中国科学院长春光学精密机械与物理研究所 | 1.5μm波段芯片级半导体/固体垂直集成被动调Q激光器 |
CN116683269A (zh) * | 2023-07-31 | 2023-09-01 | 中国科学院长春光学精密机械与物理研究所 | 1.06μm波段芯片级半导体/固体垂直集成被动调Q激光器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02168685A (ja) * | 1988-09-05 | 1990-06-28 | Kawasaki Steel Corp | 出力鏡及びその出力鏡を用いたレーザシステム |
JPH0567030U (ja) * | 1992-02-07 | 1993-09-03 | 横河電機株式会社 | 波長可変固体レ−ザ |
US5394413A (en) * | 1994-02-08 | 1995-02-28 | Massachusetts Institute Of Technology | Passively Q-switched picosecond microlaser |
JPH09181378A (ja) * | 1995-12-25 | 1997-07-11 | Japan Atom Energy Res Inst | 固体レーザー増幅器及び固体レーザー装置 |
JPH11261136A (ja) * | 1998-03-11 | 1999-09-24 | Oyo Koden Kenkyuushitsu:Kk | 光パルス発生素子 |
US6512630B1 (en) * | 2001-07-13 | 2003-01-28 | The United States Of America As Represented By The Secretary Of The Air Force | Miniature laser/amplifier system |
WO2003028177A1 (en) * | 2001-09-24 | 2003-04-03 | Giga Tera Ag | Pulse-generating laser |
JP4151476B2 (ja) * | 2003-05-14 | 2008-09-17 | ソニー株式会社 | レーザ光安定化方法、レーザ光発生装置 |
JP4041782B2 (ja) * | 2003-09-17 | 2008-01-30 | 昭和オプトロニクス株式会社 | 半導体レーザ励起固体レーザ |
US7203209B2 (en) * | 2005-01-19 | 2007-04-10 | Bae Systems Information And Electronic Systems Integration Inc. | System and method for a passively Q-switched, resonantly pumped, erbium-doped crystalline laser |
JP2007214207A (ja) * | 2006-02-07 | 2007-08-23 | Sony Corp | レーザ光発生装置 |
US7649920B2 (en) * | 2007-04-03 | 2010-01-19 | Topcon Corporation | Q-switched microlaser apparatus and method for use |
-
2009
- 2009-02-25 JP JP2009042347A patent/JP5281922B2/ja not_active Expired - Fee Related
-
2010
- 2010-01-13 US US12/686,637 patent/US20100215063A1/en not_active Abandoned
- 2010-02-24 CN CN201010121454A patent/CN101867146A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2010199288A (ja) | 2010-09-09 |
CN101867146A (zh) | 2010-10-20 |
US20100215063A1 (en) | 2010-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5281922B2 (ja) | パルスレーザ装置 | |
JP5330801B2 (ja) | レーザ利得媒質、レーザ発振器及びレーザ増幅器 | |
US9124064B2 (en) | Ultrashort pulse microchip laser, semiconductor laser, and pump method for thin laser media | |
WO2006028078A1 (ja) | 受動qスイッチレーザ装置 | |
JP2008021798A (ja) | 光増幅装置 | |
US10148057B2 (en) | Microchip laser | |
JP2004128139A (ja) | レーザ光発生装置及びその製造方法 | |
US9331451B2 (en) | Pump radiation arrangement and method for pumping a laser-active medium | |
JP2004520709A (ja) | コンパクトな超高速レーザー | |
JP2020127000A (ja) | 圧縮パルス幅を有する受動qスイッチ型固体レーザ | |
JP2014135421A (ja) | 固体レーザデバイス及びその製造方法 | |
US11201450B2 (en) | Q-switched solid-state laser | |
JP7396299B2 (ja) | レーザ装置 | |
EP1186078B1 (en) | Diode laser-pumped solid state laser | |
JP2000133863A (ja) | 固体レーザ装置 | |
JP2005039093A (ja) | レーザ装置 | |
JP4101838B2 (ja) | 固体レーザ励起モジュール及びレーザ発振器 | |
JP2007214207A (ja) | レーザ光発生装置 | |
JP4402048B2 (ja) | 固体レーザ励起モジュール及びレーザ発振器 | |
JP4627213B2 (ja) | レーザ光源 | |
WO2021171957A1 (ja) | 光共振器、光共振器の構成部品、およびレーザー装置 | |
EP1864954A2 (en) | Method for joining optical members, structure for integrating optical members and laser oscillation device | |
JP2009182053A (ja) | レーザー装置 | |
Sickinger | Development of a Thulium Germanate Thin Disk Laser Prototype | |
JP2006286735A (ja) | 固体レーザ発振装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111003 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121121 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121204 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130110 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130514 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130527 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5281922 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |