JPWO2022249581A1 - - Google Patents
Info
- Publication number
- JPWO2022249581A1 JPWO2022249581A1 JP2023523988A JP2023523988A JPWO2022249581A1 JP WO2022249581 A1 JPWO2022249581 A1 JP WO2022249581A1 JP 2023523988 A JP2023523988 A JP 2023523988A JP 2023523988 A JP2023523988 A JP 2023523988A JP WO2022249581 A1 JPWO2022249581 A1 JP WO2022249581A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021088687 | 2021-05-26 | ||
| PCT/JP2022/005844 WO2022249581A1 (ja) | 2021-05-26 | 2022-02-15 | レーザ素子及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249581A1 true JPWO2022249581A1 (ja) | 2022-12-01 |
Family
ID=84229807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023523988A Pending JPWO2022249581A1 (ja) | 2021-05-26 | 2022-02-15 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2022249581A1 (ja) |
| WO (1) | WO2022249581A1 (ja) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3270641B2 (ja) * | 1993-11-30 | 2002-04-02 | 富士写真フイルム株式会社 | 固体レーザー |
| FR2751796B1 (fr) * | 1996-07-26 | 1998-08-28 | Commissariat Energie Atomique | Microlaser soilde, a pompage optique par laser semi-conducteur a cavite verticale |
| US20030039274A1 (en) * | 2000-06-08 | 2003-02-27 | Joseph Neev | Method and apparatus for tissue treatment and modification |
| US7203209B2 (en) * | 2005-01-19 | 2007-04-10 | Bae Systems Information And Electronic Systems Integration Inc. | System and method for a passively Q-switched, resonantly pumped, erbium-doped crystalline laser |
| JP2007316158A (ja) * | 2006-05-23 | 2007-12-06 | Hamamatsu Photonics Kk | 偏光制御素子及びそれを用いたレーザシステム |
| JP5281922B2 (ja) * | 2009-02-25 | 2013-09-04 | 浜松ホトニクス株式会社 | パルスレーザ装置 |
| CN110741516B (zh) * | 2017-05-29 | 2023-05-12 | 索尼公司 | 无源q开关脉冲激光装置、处理设备和医疗设备 |
| JP7396299B2 (ja) * | 2018-12-25 | 2023-12-12 | ソニーグループ株式会社 | レーザ装置 |
-
2022
- 2022-02-15 WO PCT/JP2022/005844 patent/WO2022249581A1/ja active Application Filing
- 2022-02-15 JP JP2023523988A patent/JPWO2022249581A1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022249581A1 (ja) | 2022-12-01 |