JPWO2023017630A1 - - Google Patents
Info
- Publication number
- JPWO2023017630A1 JPWO2023017630A1 JP2023541209A JP2023541209A JPWO2023017630A1 JP WO2023017630 A1 JPWO2023017630 A1 JP WO2023017630A1 JP 2023541209 A JP2023541209 A JP 2023541209A JP 2023541209 A JP2023541209 A JP 2023541209A JP WO2023017630 A1 JPWO2023017630 A1 JP WO2023017630A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021131686 | 2021-08-12 | ||
| PCT/JP2022/009160 WO2023017630A1 (ja) | 2021-08-12 | 2022-03-03 | 面発光素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2023017630A1 true JPWO2023017630A1 (ja) | 2023-02-16 |
Family
ID=85200081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023541209A Pending JPWO2023017630A1 (ja) | 2021-08-12 | 2022-03-03 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2023017630A1 (ja) |
| CN (1) | CN117795797A (ja) |
| DE (1) | DE112022003920T5 (ja) |
| WO (1) | WO2023017630A1 (ja) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4141172B2 (ja) | 2002-04-30 | 2008-08-27 | 株式会社リコー | 面発光半導体レーザ素子の製造方法および面発光半導体レーザ素子および光伝送システム |
| JP5017804B2 (ja) | 2005-06-15 | 2012-09-05 | 富士ゼロックス株式会社 | トンネル接合型面発光半導体レーザ装置およびその製造方法 |
| JP2008283137A (ja) | 2007-05-14 | 2008-11-20 | Sumitomo Electric Ind Ltd | 面発光半導体レーザ |
| KR101946035B1 (ko) * | 2012-09-18 | 2019-04-25 | 한국전자통신연구원 | 수직공진 표면방출 레이저 및 그의 제조방법 |
| JP2018125404A (ja) * | 2017-01-31 | 2018-08-09 | 株式会社リコー | 面発光レーザ素子 |
| WO2019171864A1 (ja) * | 2018-03-06 | 2019-09-12 | ソニー株式会社 | 発光素子 |
| JP2021131686A (ja) | 2020-02-19 | 2021-09-09 | 株式会社東芝 | シミュレーションプログラム、シミュレーション方法及びシミュレーション装置 |
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2022
- 2022-03-03 WO PCT/JP2022/009160 patent/WO2023017630A1/ja active Application Filing
- 2022-03-03 CN CN202280054609.XA patent/CN117795797A/zh active Pending
- 2022-03-03 JP JP2023541209A patent/JPWO2023017630A1/ja active Pending
- 2022-03-03 DE DE112022003920.5T patent/DE112022003920T5/de active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2023017630A1 (ja) | 2023-02-16 |
| CN117795797A (zh) | 2024-03-29 |
| DE112022003920T5 (de) | 2024-05-23 |