JP5276768B2 - カソード基板の短絡除去方法。 - Google Patents
カソード基板の短絡除去方法。 Download PDFInfo
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- JP5276768B2 JP5276768B2 JP2005209637A JP2005209637A JP5276768B2 JP 5276768 B2 JP5276768 B2 JP 5276768B2 JP 2005209637 A JP2005209637 A JP 2005209637A JP 2005209637 A JP2005209637 A JP 2005209637A JP 5276768 B2 JP5276768 B2 JP 5276768B2
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- cathode
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- 239000000758 substrate Substances 0.000 title claims description 62
- 238000000034 method Methods 0.000 title claims description 16
- 239000011521 glass Substances 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000001552 radio frequency sputter deposition Methods 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 101100280944 Pisum sativum PETF gene Proteins 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- YDLQKLWVKKFPII-UHFFFAOYSA-N timiperone Chemical compound C1=CC(F)=CC=C1C(=O)CCCN1CCC(N2C(NC3=CC=CC=C32)=S)CC1 YDLQKLWVKKFPII-UHFFFAOYSA-N 0.000 description 2
- 229950000809 timiperone Drugs 0.000 description 2
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/82—Recycling of waste of electrical or electronic equipment [WEEE]
Description
(比較例1)
2 カソード基板
22 カソード電極ライン
23 絶縁層
24 ゲート電極ライン
25 電子放出部
3 アノード基板
32 アノード電極層
33 蛍光層
Claims (1)
- 処理基板上に、電子放出部に接続されたカソード電極とゲート電極とを備えたカソード基板のカソード電極とゲート電極との間で電圧を印加し、電子放出部とゲート電極層との間が短絡状態であるとき、この短絡箇所を流れる電流によって短絡箇所を発熱させて除去するようにしたカソード基板の短絡箇所除去方法において、
前記カソード電極とゲート電極との間で印加する電圧を、カソード電極に対しゲート電極が低い電位となるようにし、
前記カソード電極とゲート電極との間で印加する電圧の絶対値を、電子放出部から電子を放出させる際に印加する電圧の1.0〜5.0倍の範囲に設定し、
前記電流を、パルス幅が100nsec〜1msecで、周波数が10〜1000Hzのパルス電流としたことを特徴とするカソード基板の短絡箇所除去方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005209637A JP5276768B2 (ja) | 2005-07-20 | 2005-07-20 | カソード基板の短絡除去方法。 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005209637A JP5276768B2 (ja) | 2005-07-20 | 2005-07-20 | カソード基板の短絡除去方法。 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007026977A JP2007026977A (ja) | 2007-02-01 |
JP5276768B2 true JP5276768B2 (ja) | 2013-08-28 |
Family
ID=37787473
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005209637A Expired - Fee Related JP5276768B2 (ja) | 2005-07-20 | 2005-07-20 | カソード基板の短絡除去方法。 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5276768B2 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3502134B2 (ja) * | 1993-12-28 | 2004-03-02 | 松下電器産業株式会社 | 冷陰極 |
JPH07273430A (ja) * | 1994-03-31 | 1995-10-20 | Canon Inc | 電気配線基板の製造方法 |
JP2001023505A (ja) * | 1999-07-06 | 2001-01-26 | Sony Corp | 冷陰極電界電子放出表示装置用のカソード・パネルの検査方法 |
JP3610325B2 (ja) * | 2000-09-01 | 2005-01-12 | キヤノン株式会社 | 電子放出素子、電子源及び画像形成装置の製造方法 |
JP3944155B2 (ja) * | 2003-12-01 | 2007-07-11 | キヤノン株式会社 | 電子放出素子、電子源及び画像表示装置の製造方法 |
JP2005228662A (ja) * | 2004-02-16 | 2005-08-25 | Canon Inc | 電子放出素子、電子源および画像表示装置の製造方法 |
-
2005
- 2005-07-20 JP JP2005209637A patent/JP5276768B2/ja not_active Expired - Fee Related
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JP2007026977A (ja) | 2007-02-01 |
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