JP5271258B2 - 発光装置 - Google Patents

発光装置 Download PDF

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Publication number
JP5271258B2
JP5271258B2 JP2009505669A JP2009505669A JP5271258B2 JP 5271258 B2 JP5271258 B2 JP 5271258B2 JP 2009505669 A JP2009505669 A JP 2009505669A JP 2009505669 A JP2009505669 A JP 2009505669A JP 5271258 B2 JP5271258 B2 JP 5271258B2
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JP
Japan
Prior art keywords
sealing material
material layer
light emitting
emitting device
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009505669A
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English (en)
Japanese (ja)
Other versions
JP2010500739A (ja
JP2010500739A5 (enExample
Inventor
秀男 永井
正明 鈴木
忠昭 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2009505669A priority Critical patent/JP5271258B2/ja
Publication of JP2010500739A publication Critical patent/JP2010500739A/ja
Publication of JP2010500739A5 publication Critical patent/JP2010500739A5/ja
Application granted granted Critical
Publication of JP5271258B2 publication Critical patent/JP5271258B2/ja
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
JP2009505669A 2006-08-09 2007-08-06 発光装置 Active JP5271258B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009505669A JP5271258B2 (ja) 2006-08-09 2007-08-06 発光装置

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006217058 2006-08-09
JP2006217058 2006-08-09
JP2009505669A JP5271258B2 (ja) 2006-08-09 2007-08-06 発光装置
PCT/JP2007/065872 WO2008018615A1 (en) 2006-08-09 2007-08-06 Light-emitting device

Publications (3)

Publication Number Publication Date
JP2010500739A JP2010500739A (ja) 2010-01-07
JP2010500739A5 JP2010500739A5 (enExample) 2010-09-02
JP5271258B2 true JP5271258B2 (ja) 2013-08-21

Family

ID=38722739

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009505669A Active JP5271258B2 (ja) 2006-08-09 2007-08-06 発光装置

Country Status (5)

Country Link
US (1) US7859002B2 (enExample)
EP (1) EP2067176B1 (enExample)
JP (1) JP5271258B2 (enExample)
TW (1) TWI418053B (enExample)
WO (1) WO2008018615A1 (enExample)

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JP5305708B2 (ja) * 2007-03-28 2013-10-02 京セラ株式会社 発光装置
JP2011511325A (ja) * 2008-02-08 2011-04-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 光学素子及びその製造方法
US7994529B2 (en) * 2008-11-05 2011-08-09 Koninklijke Philips Electronics N.V. LED with molded bi-directional optics
TWI384660B (zh) * 2009-01-23 2013-02-01 億光電子工業股份有限公司 發光二極體封裝結構及其製作方法
TWI474502B (zh) * 2009-03-30 2015-02-21 財團法人工業技術研究院 發光二極體封裝結構與其製作方法
US9293667B2 (en) 2010-08-19 2016-03-22 Soraa, Inc. System and method for selected pump LEDs with multiple phosphors
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US20110186887A1 (en) * 2009-09-21 2011-08-04 Soraa, Inc. Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials
TW201126765A (en) * 2010-01-29 2011-08-01 Advanced Optoelectronic Tech Package structure of compound semiconductor and manufacturing method thereof
US8740413B1 (en) 2010-02-03 2014-06-03 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
CN102347418A (zh) * 2010-08-02 2012-02-08 展晶科技(深圳)有限公司 发光二极管封装结构及其制造方法
JP2012195350A (ja) * 2011-03-15 2012-10-11 Stanley Electric Co Ltd 発光装置及びその製造方法
WO2013051280A1 (ja) * 2011-10-07 2013-04-11 コニカミノルタアドバンストレイヤー株式会社 蛍光体分散液、及びこれを用いたｌｅｄ装置の製造方法
CN102420284B (zh) * 2011-11-02 2014-02-12 佛山市国星光电股份有限公司 自聚焦透镜及led封装结构
US9419189B1 (en) * 2013-11-04 2016-08-16 Soraa, Inc. Small LED source with high brightness and high efficiency
JP6191453B2 (ja) * 2013-12-27 2017-09-06 日亜化学工業株式会社 発光装置
JP6274943B2 (ja) * 2014-03-27 2018-02-07 新日本無線株式会社 Ｌｅｄモジュールおよびその製造方法
KR101585773B1 (ko) * 2014-06-12 2016-01-15 주식회사 효성 희토류 금속 산화물 입자를 포함하는 led 봉지재
US10411176B2 (en) 2014-09-12 2019-09-10 Semicon Light Co., Ltd. Method for manufacturing semiconductor light-emitting device
US9455300B1 (en) * 2015-03-02 2016-09-27 Rayvio Corporation Pixel array of ultraviolet light emitting devices
DE102015122627A1 (de) * 2015-05-28 2016-12-01 Osram Opto Semiconductors Gmbh Optoelektronische Anordnung und Tiefenerfassungssystem
JP6787286B2 (ja) * 2017-09-20 2020-11-18 株式会社村田製作所 インダクタ部品の製造方法
KR102701802B1 (ko) * 2018-01-10 2024-09-03 서울반도체 주식회사 발광 장치
JP7101547B2 (ja) * 2018-06-27 2022-07-15 株式会社小糸製作所 車両用前照灯
US20200044125A1 (en) * 2018-07-31 2020-02-06 Innolux Corporation Light-emitting device
TWI767282B (zh) * 2018-10-31 2022-06-11 億光電子工業股份有限公司 發光裝置及發光模組
GB2595684A (en) * 2020-06-03 2021-12-08 Plessey Semiconductors Ltd Spacer LED architecture for high efficiency micro LED displays

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JPS58209173A (ja) * 1982-05-31 1983-12-06 Nippon Telegr & Teleph Corp <Ntt> 自己集束レンズ付光学素子およびその製造方法
JPH06153097A (ja) * 1992-06-25 1994-05-31 Sony Corp 固体撮像素子
JPH0883869A (ja) * 1994-09-09 1996-03-26 Sony Corp 半導体装置およびその製造方法
JPH1084137A (ja) * 1996-09-06 1998-03-31 Omron Corp 発光デバイスおよびその製造方法
JP2002050797A (ja) 2000-07-31 2002-02-15 Toshiba Corp 半導体励起蛍光体発光装置およびその製造方法
JP4193446B2 (ja) * 2001-08-22 2008-12-10 日亜化学工業株式会社 発光装置
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JP4047185B2 (ja) * 2003-02-06 2008-02-13 株式会社小糸製作所 車両用前照灯及び発光モジュール
JP4138586B2 (ja) 2003-06-13 2008-08-27 スタンレー電気株式会社 光源用ｌｅｄランプおよびこれを用いた車両用前照灯
US20040256628A1 (en) 2003-06-23 2004-12-23 Chin Yee Loong Optical source having integral diffractive element
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JP2005167091A (ja) 2003-12-04 2005-06-23 Nitto Denko Corp 光半導体装置
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Also Published As

Publication number Publication date
WO2008018615A1 (en) 2008-02-14
US20090302338A1 (en) 2009-12-10
TWI418053B (zh) 2013-12-01
US7859002B2 (en) 2010-12-28
JP2010500739A (ja) 2010-01-07
EP2067176A1 (en) 2009-06-10
EP2067176B1 (en) 2015-04-01
TW200822398A (en) 2008-05-16

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