JP5268459B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5268459B2
JP5268459B2 JP2008180287A JP2008180287A JP5268459B2 JP 5268459 B2 JP5268459 B2 JP 5268459B2 JP 2008180287 A JP2008180287 A JP 2008180287A JP 2008180287 A JP2008180287 A JP 2008180287A JP 5268459 B2 JP5268459 B2 JP 5268459B2
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Japan
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor device
impact
layer
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Expired - Fee Related
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JP2008180287A
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English (en)
Japanese (ja)
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JP2010021351A (ja
JP2010021351A5 (enExample
Inventor
欣聡 及川
晋吾 江口
光男 増山
正敏 片庭
博信 小路
昌孝 中田
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008180287A priority Critical patent/JP5268459B2/ja
Publication of JP2010021351A publication Critical patent/JP2010021351A/ja
Publication of JP2010021351A5 publication Critical patent/JP2010021351A5/ja
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Publication of JP5268459B2 publication Critical patent/JP5268459B2/ja
Expired - Fee Related legal-status Critical Current
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  • Laminated Bodies (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Thin Film Transistor (AREA)
JP2008180287A 2008-07-10 2008-07-10 半導体装置 Expired - Fee Related JP5268459B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008180287A JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008180287A JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013097377A Division JP5877814B2 (ja) 2013-05-07 2013-05-07 半導体装置

Publications (3)

Publication Number Publication Date
JP2010021351A JP2010021351A (ja) 2010-01-28
JP2010021351A5 JP2010021351A5 (enExample) 2011-06-02
JP5268459B2 true JP5268459B2 (ja) 2013-08-21

Family

ID=41705957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008180287A Expired - Fee Related JP5268459B2 (ja) 2008-07-10 2008-07-10 半導体装置

Country Status (1)

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JP (1) JP5268459B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8841675B2 (en) 2011-09-23 2014-09-23 Semiconductor Energy Laboratory Co., Ltd. Minute transistor
JP6328973B2 (ja) * 2014-03-28 2018-05-23 三光合成株式会社 電磁波遮蔽板及び電磁波遮蔽板の製造方法
CN118483457A (zh) * 2024-04-11 2024-08-13 徐州领测半导体科技有限公司 一种具有位置校正功能的集成电路测试夹具

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3938921B2 (ja) * 2003-07-30 2007-06-27 Ｔｄｋ株式会社 半導体ｉｃ内蔵モジュールの製造方法

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Publication number Publication date
JP2010021351A (ja) 2010-01-28

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