JP5260371B2 - 低誘電率及び低損失特性を有するポリp−キシリレン系重合体ならびにこれを用いた絶縁材、印刷回路基板および機能性素子 - Google Patents
低誘電率及び低損失特性を有するポリp−キシリレン系重合体ならびにこれを用いた絶縁材、印刷回路基板および機能性素子 Download PDFInfo
- Publication number
- JP5260371B2 JP5260371B2 JP2009068529A JP2009068529A JP5260371B2 JP 5260371 B2 JP5260371 B2 JP 5260371B2 JP 2009068529 A JP2009068529 A JP 2009068529A JP 2009068529 A JP2009068529 A JP 2009068529A JP 5260371 B2 JP5260371 B2 JP 5260371B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating material
- printed circuit
- circuit board
- polymer
- poly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 0 *c1c(C2(*C3)*3C*2)c(*)c(*)c(C2(*C3)*3C*2)c1* Chemical compound *c1c(C2(*C3)*3C*2)c(*)c(*)c(C2(*C3)*3C*2)c1* 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/025—Polyxylylenes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/10—Definition of the polymer structure
- C08G2261/14—Side-groups
- C08G2261/148—Side-chains having aromatic units
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
- C08G2261/342—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms
- C08G2261/3424—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms non-conjugated, e.g. paracyclophanes or xylenes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4673—Application methods or materials of intermediate insulating layers not specially adapted to any one of the previous methods of adding a circuit layer
- H05K3/4676—Single layer compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Polyethers (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Organic Insulating Materials (AREA)
Description
(1)単量体の合成
1H NMR(400MHz、CHCl3)δ:7.37−6.80(m、9H、ArH)、3.75(s、2H、PhCH2Ph)
13C NMR(400MHz、CHCl3)δ:41.4(PhCH2Ph)、119.9(ArC−Br)、140.6−126.2(ArC)
1H NMR(300MHz、CDCl3)δ:7.31−7.10(m、14H、ArH)、5.63(s、1H、−CHOH−、3.86(s、2H、-CH2-)、2.46(s1H、−OH)
13C NMR(75MHz、CDCl3)δ:144.0−126.3(ArC)、76.2−(CHOH)−、41.8(−CH2−)
1H NMR(300MHz、CDCl3)δ:7.20−7.00(m、14H、ArH)、6.00(s、1H、−CHCl−、3.86(s、2H、-CH2-)
13C NMR(75MHz、CDCl3)δ:141.0−126.1(ArC)、64.0(−CH(Cl)−)、41.4(−CH2−)
1H NMR(300MHz、CDCl3)δ:7.10−6.40(m、14H、ArH)、4.32(s、2H、PhCH−CHPH−)
13C NMR(75MHz、CDCl3)δ:143.3−125.5(ArC)、56.0(PhCH−CHPH)
<物性測定方法>
熱重量分析計(TGA)
熱重量分析実験は、TGA2050(TA Instruments社製)を用いて行った。10mgの重合体サンプルを使用し、窒素雰囲気下で700℃まで10℃/分で昇温した。
示差走査熱量分析実験は、DSC2010及びDSC2910(TA Instruments社製)を用いて行った。サンプルの重量は5mgであった。全ての重合体サンプルは10℃/分で300℃まで加熱し、その後、10℃/分で30℃まで冷却した。このような加熱及び冷却後の最初のスキャンの後、それぞれのサンプルに対して同一工程で二回目のスキャンを行った。
屈折率は薄膜分析器のFilmetrics F20(FilmetricsInc.社製)を用いて632.8nmの波長で測定した。サンプルを測定する前に、Si−ウェハ(Si−Wafer)スタンダードサンプル(厚さ=7254.7Å)上のSiO2をテストした。重合体はシクロヘキサンに12重量%で溶解し、3000rpmで30秒間、シリコンウェハ上にスピンコートし、サンプルを60℃で1日間真空乾燥し、均一で純粋なフィルムがSiウェハ上に得られた。フィルムは、スピンコーティング時に透明で、かつ優れた柔軟性および接着力を有していた。
誘電定数は、金属−絶縁体−金属(MIM)の並列キャパシタンス方法で測定した。重合体フィルムは後述する方法で製造した。重合体粉末をテフロン(登録商標)製の二つの半部(halve)を有するモールドに注入した。その後、モールドを二つのステンレス鋼プラテン(platen)で加圧し、真空オーブンで200℃で4時間加熱した。水中で冷却した後、モールドの二つの半部を分離してフィルムを取り出した。 振動数1MHz〜1GHzの範囲で、RFインピーダンス/材料分析器、Agilent E4991A(Agilent Technologies社製)を用いて誘電定数及び誘電正接を測定した。フィルムをテストヘッド及び装着部にロードした。
<物性測定結果>
a)分子量:Mn:190,000、Mw/Mn:2.4
b)重合度(Dp):400−900単量体単位
c)ガラス転移温度(Tg):230〜240℃
d)熱分解開始温度(T5%):390〜405℃
e)屈折率:1.59
f)溶解能:ジフェニルポリp−キシリレンは、テトラヒドロフラン(THF)、クロロホルム(CHCl3)、アセトン、トルエン、及び塩素原子が含まれている全ての溶媒に対して溶解が可能であった。
g)誘電定数範囲:500MHzで2.8、1GHzで2.8
h)誘電正接範囲(Tanδ):500MHzで0.002、1GHzで0.003
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080084747A KR100965915B1 (ko) | 2008-08-28 | 2008-08-28 | 저유전율 및 저손실 특성을 가진 폴리(p-자일릴렌)계중합체, 이를 이용한 절연재, 인쇄회로기판 및 기능성 소자 |
KR10-2008-0084747 | 2008-08-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010053333A JP2010053333A (ja) | 2010-03-11 |
JP5260371B2 true JP5260371B2 (ja) | 2013-08-14 |
Family
ID=41696985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009068529A Expired - Fee Related JP5260371B2 (ja) | 2008-08-28 | 2009-03-19 | 低誘電率及び低損失特性を有するポリp−キシリレン系重合体ならびにこれを用いた絶縁材、印刷回路基板および機能性素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8829155B2 (ja) |
JP (1) | JP5260371B2 (ja) |
KR (1) | KR100965915B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11390718B2 (en) | 2019-04-10 | 2022-07-19 | Specialty Coating Systems, Inc. | Elastic parylene |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6127038A (en) * | 1997-12-11 | 2000-10-03 | American Meter Company | Printed circuit board coating and method |
JP2000003909A (ja) | 1998-06-15 | 2000-01-07 | Kishimoto Sangyo Co Ltd | 半導体デバイス用絶縁膜および半導体デバイス |
JP4584441B2 (ja) | 2000-11-15 | 2010-11-24 | 株式会社リコー | 有機電界発光素子及びその製造方法 |
US7049005B2 (en) | 2001-05-30 | 2006-05-23 | Honeywell International Inc. | Organic compositions |
TW200307712A (en) * | 2002-06-14 | 2003-12-16 | Sumitomo Chemical Co | Phenolic resin and method of producing the same |
DE102005008927A1 (de) | 2005-02-24 | 2006-08-31 | Philipps-Universität Marburg | Hydrophobe fluorierte Polymeroberflächen |
US7994372B2 (en) * | 2005-10-31 | 2011-08-09 | Specialty Coating Systems, Inc. | Parylene variants and methods of synthesis and use |
US7462750B2 (en) * | 2005-10-31 | 2008-12-09 | Specialty Coating Systems, Inc. | Parylene variants and methods of synthesis and use |
-
2008
- 2008-08-28 KR KR1020080084747A patent/KR100965915B1/ko active IP Right Grant
-
2009
- 2009-02-12 US US12/370,313 patent/US8829155B2/en active Active
- 2009-03-19 JP JP2009068529A patent/JP5260371B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2010053333A (ja) | 2010-03-11 |
US8829155B2 (en) | 2014-09-09 |
US20100048858A1 (en) | 2010-02-25 |
KR100965915B1 (ko) | 2010-06-24 |
KR20100025970A (ko) | 2010-03-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101046430B1 (ko) | 저유전율 및 저손실 특성을 가진 노르보넨계 중합체, 이를이용한 절연재, 인쇄회로기판 및 기능성 소자 | |
US6124421A (en) | Poly(arylene ether) compositions and methods of manufacture thereof | |
JP3751978B2 (ja) | 改善されたポリ(アリーレンエーテル)組成物およびその製造法 | |
KR101884447B1 (ko) | 모노머, 유기막 조성물, 유기막, 및 패턴형성방법 | |
US7625636B2 (en) | Insulating-film forming composition, insulating film and preparation process thereof | |
JP4549781B2 (ja) | 新規のシロキサン樹脂及びこれを用いた半導体層間絶縁膜 | |
CN113508152B (zh) | 用于制备介电材料的可交联硅氧烷化合物 | |
KR101666484B1 (ko) | 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법 | |
JP5260371B2 (ja) | 低誘電率及び低損失特性を有するポリp−キシリレン系重合体ならびにこれを用いた絶縁材、印刷回路基板および機能性素子 | |
JP2011026513A (ja) | 硬化性環状ホスファゼン系化合物およびこれらの製造方法 | |
JPWO2008114705A1 (ja) | 有機絶縁材料、それを用いた樹脂膜用ワニス、樹脂膜並びに半導体装置 | |
KR101505618B1 (ko) | 고내열성 및 고내화학성의 보호박막 조성물 및 이를 이용하여 보호박막을 제조하는 방법 | |
KR101100351B1 (ko) | 저유전율 및 저손실 특성을 가진 노르보넨계 중합체 및 이를 이용한 절연재 | |
JP5365331B2 (ja) | 有機絶縁材料、樹脂膜及び半導体装置 | |
KR101465582B1 (ko) | 고내열성 및 고내화학성의 보호박막 조성물 및 이를 이용하여 보호박막을 제조하는 방법 | |
JP2007031480A (ja) | アセチレン性三重結合を有するモノマーの重合体、これを用いる膜形成用組成物、絶縁膜および電子デバイス | |
WO2004113407A1 (en) | Novel polymer and production of nano-porous low dielectric polymer composite film using the same | |
US8431656B2 (en) | Curable cyclic phosphazene compound and method of preparing the same | |
CN115322140B (zh) | 一种含双键化合物及制备方法、聚酰胺酸酯树脂组合物及应用 | |
JP2010138376A (ja) | 絶縁膜形成用重合体の重合方法、絶縁膜形成用重合体、有機絶縁膜用材料及び有機絶縁膜並びに電子デバイス | |
JP5576428B2 (ja) | 硬化性環状ホスファゼン系化合物およびこれらの製造方法 | |
JP3769929B2 (ja) | フェニレン基含有重合体組成物、薄膜および電子部品 | |
KR100933617B1 (ko) | 경화성 환형 포스파젠계 화합물 및 이들의 제조방법 | |
JPH11349668A (ja) | フェニレン基含有重合体およびその製造方法 | |
JP2011026515A (ja) | 膜形成用組成物、絶縁膜および半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120417 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120515 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120815 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120820 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120831 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130326 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130425 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160502 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5260371 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |