JP5252977B2 - Optical device and manufacturing method thereof - Google Patents

Optical device and manufacturing method thereof Download PDF

Info

Publication number
JP5252977B2
JP5252977B2 JP2008106274A JP2008106274A JP5252977B2 JP 5252977 B2 JP5252977 B2 JP 5252977B2 JP 2008106274 A JP2008106274 A JP 2008106274A JP 2008106274 A JP2008106274 A JP 2008106274A JP 5252977 B2 JP5252977 B2 JP 5252977B2
Authority
JP
Japan
Prior art keywords
light emitting
light receiving
optical device
convex portions
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008106274A
Other languages
Japanese (ja)
Other versions
JP2009135401A (en
Inventor
虎 孟
裕人 大崎
哲史 西尾
清一 糸井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2008106274A priority Critical patent/JP5252977B2/en
Priority to US12/209,233 priority patent/US7911018B2/en
Publication of JP2009135401A publication Critical patent/JP2009135401A/en
Priority to US12/929,795 priority patent/US7977138B1/en
Application granted granted Critical
Publication of JP5252977B2 publication Critical patent/JP5252977B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)

Description

本発明は、光学デバイス及びその製造方法に関する。   The present invention relates to an optical device and a manufacturing method thereof.

一般的な光学デバイスの中で、たとえば固体撮像素子で構成される固体撮像装置には、不必要な高周波成分を遮断する光学的水晶板による光学的ローパスフィルタが用いられている。装置の小型軽量化のためには、回折格子を用いた光学的ローパスフィルタが用いられている（例えば、特許文献１）。   Among general optical devices, an optical low-pass filter using an optical quartz plate that blocks unnecessary high-frequency components is used in, for example, a solid-state imaging device including a solid-state imaging device. In order to reduce the size and weight of the apparatus, an optical low-pass filter using a diffraction grating is used (for example, Patent Document 1).

しかし、かかる光学的ローパスフィルタは固体撮像素子の撮像面に対して正確に位置決めすることが必要であるのに、μmのオーダで正確に位置決めすることは決して容易でないため、回折格子像が画面上に発生するのを十分に防止することができず、生産性も向上し難い。その対策として、図１０に示すように、固体撮像素子１と光学的ローパスフィルタ２とをギャップ規制体３を介して固定することにより、互いの間のギャップを規制して、μmのオーダで正確に位置決めすることが提案されている（例えば、特許文献２）。   However, although such an optical low-pass filter needs to be accurately positioned with respect to the imaging surface of the solid-state imaging device, it is never easy to accurately position it on the order of μm. Cannot be sufficiently prevented, and productivity is difficult to improve. As a countermeasure, as shown in FIG. 10, the solid-state imaging device 1 and the optical low-pass filter 2 are fixed via a gap regulating body 3 to regulate the gap between each other and accurately in the order of μm. It has been proposed that the positioning be performed (for example, Patent Document 2).

一方、固体撮像装置のパッケージ構造については、従来の中空構造（図１０参照）に代えて、直貼り構造が提案されている（例えば、特許文献３）。直貼り構造とは、半導体基板の受光部（または発光部）に透光性板材を透光性接着剤で直接に貼り付ける構造をいう。直貼り構造のメリットは、透光性板材と透光性接着剤と半導体基板の平坦膜との屈折率を揃えることによって、固体撮像装置の高感度化を図ることができる点である。直貼りであるため、パッケージの小型化、薄型化は容易であり、受光部への工程ダストや移動ダストの混入を防ぐこともできる。
特開昭５３−１１９０６３号公報 特開平６−３３４１５９号公報 特開平３−１５１６６６号公報 On the other hand, as a package structure of the solid-state imaging device, a direct attachment structure has been proposed instead of the conventional hollow structure (see FIG. 10) (for example, Patent Document 3). The direct attachment structure refers to a structure in which a light-transmitting plate material is directly attached to a light-receiving portion (or light-emitting portion) of a semiconductor substrate with a light-transmitting adhesive. The merit of the direct attachment structure is that the sensitivity of the solid-state imaging device can be increased by aligning the refractive indexes of the translucent plate material, translucent adhesive, and flat film of the semiconductor substrate. Since it is directly attached, it is easy to reduce the size and thickness of the package, and it is possible to prevent the process dust and moving dust from entering the light receiving portion.
JP-A-53-119063 JP-A-6-334159 Japanese Patent Laid-Open No. 3-151666

ここで、固体撮像装置（受光デバイス）やLED装置（発光デバイス）等の光学デバイスを構成する際に、受光部または発光部に透光性板材を透光性接着剤で直接貼り付ける特許文献３の直貼り構造を採用し、かつ特許文献２のギャップ規制体を、受光部または発光部と透光性板材とを正確に位置決めするために、また透光性接着剤を流れ止めするために採用することが考えられる。   Here, when an optical device such as a solid-state imaging device (light receiving device) or an LED device (light emitting device) is configured, Patent Document 3 in which a translucent plate material is directly attached to the light receiving portion or the light emitting portion with a translucent adhesive. The gap regulating body of Patent Document 2 is used to accurately position the light receiving part or light emitting part and the translucent plate, and to prevent the translucent adhesive from flowing. It is possible to do.

しかし、たとえば図１１に示すように固体撮像装置を構成する場合、半導体基板１１の受光部１２ａ上に透光性接着剤５を一点塗布方式で塗布すると、光学的ローパスフィルタなどの透光性板材２を搭載する際に、図１２（ａ）に示すように、透光性接着剤５が直線状の凸部３の外側、特に凸部３の中央部の外側に大きくはみ出し、半導体基板１１の周縁部に配置された電極部１３に付着する。図１２（ｂ）に示すように透光性接着剤６を受光部１２ａ上に二点塗布すると、凸部３の外側へのはみ出しは抑えられるが、二点の透光性接着剤５間の空気を巻き込んで内部にボイドが発生する。かかるボイドの対策としては、アンダーフィル方式、つまり透光性板材２を凸部３上にセットした状態で毛細管現象を利用して透光性接着剤５を流入させることが有効であるが、図１３に示すように、透光性板材２（および凸部３）の外周側へ透光性接着剤５が回り込むはみ出しが起こる。   However, for example, when a solid-state imaging device is configured as shown in FIG. 11, a translucent plate material such as an optical low-pass filter is obtained by applying the translucent adhesive 5 on the light receiving portion 12a of the semiconductor substrate 11 by a one-point application method. When mounting 2, as shown in FIG. 12A, the translucent adhesive 5 protrudes greatly outside the linear convex portion 3, particularly outside the central portion of the convex portion 3. It adheres to the electrode part 13 arrange | positioned at a peripheral part. As shown in FIG. 12B, when the light-transmitting adhesive 6 is applied on the light receiving portion 12a at two points, the protrusion to the outside of the convex portion 3 is suppressed, but between the two points of the light-transmitting adhesive 5 Void is generated inside by entraining air. As a countermeasure against such voids, it is effective to cause the translucent adhesive 5 to flow in using an underfill method, that is, in a state where the translucent plate 2 is set on the convex portion 3 by using a capillary phenomenon. As shown in FIG. 13, the translucent adhesive 5 protrudes around the outer peripheral side of the translucent plate 2 (and the convex portion 3).

本発明は上記問題を解決するもので、半導体基板の受光部または発光部に透光性板材を直接に貼着した直貼り構造を有しながら、透光性接着剤の電極部側へのはみ出しや半導体基板・透光性板材間のボイドを抑えることができる光学デバイスおよびその製造方法を提供することを目的とする。   The present invention solves the above problem, and has a direct attachment structure in which a light-transmitting plate material is directly attached to a light-receiving part or a light-emitting part of a semiconductor substrate, while the light-transmitting adhesive protrudes to the electrode part side. Another object of the present invention is to provide an optical device that can suppress voids between the semiconductor substrate and the translucent plate and a method for manufacturing the same.

上記課題を解決するために、本発明の光学デバイスは、受光部または発光部と電極部とが形成された半導体基板と、前記受光部または発光部上に透光性接着剤により貼着された透光性板材とを有しており、前記半導体基板に複数の凸部が、前記受光部または発光部と前記電極部との間を仕切るように且つ互いの間に適当間隙を設けて形成され、前記透光性接着剤が、前記受光部または発光部上に供給されて前記凸部および間隙に達したものであることを特徴とする。 In order to solve the above problems, an optical device of the present invention is a semiconductor substrate on which a light receiving part or a light emitting part and an electrode part are formed, and is attached to the light receiving part or the light emitting part with a translucent adhesive. And a plurality of convex portions are formed on the semiconductor substrate so as to partition the light receiving portion or the light emitting portion and the electrode portion with an appropriate gap therebetween. The translucent adhesive is supplied onto the light receiving part or the light emitting part and reaches the convex part and the gap .

また本発明の光学デバイスの製造方法は、受光部または発光部と電極部とが形成される半導体基板に、複数の凸部を、前記受光部または発光部と前記電極部との間を仕切るように且つ互いの間に適当間隙を設けて形成する工程と、前記複数の凸部を有する半導体基板の受光部または発光部上に液状の透光性接着剤を供給する工程と、前記複数の凸部を有する半導体基板の受光部または発光部上に透光性板材を配置する工程と、前記半導体基板と透光性板材との間の透光性接着剤を硬化させて前記受光部または発光部上に透光性板材を貼着する工程と、を有することを特徴とする。   In the method for manufacturing an optical device according to the present invention, a plurality of convex portions are separated from the light receiving portion or the light emitting portion and the electrode portion on a semiconductor substrate on which the light receiving portion or the light emitting portion and the electrode portion are formed. And a step of forming an appropriate gap between each other, a step of supplying a liquid translucent adhesive onto the light receiving portion or the light emitting portion of the semiconductor substrate having the plurality of convex portions, and the plurality of convex portions. A step of disposing a light-transmitting plate material on a light-receiving portion or a light-emitting portion of a semiconductor substrate having a portion, and curing the light-transmitting adhesive between the semiconductor substrate and the light-transmitting plate material, thereby the light-receiving portion or the light-emitting portion And a step of adhering a translucent plate material thereon.

上記構成により、半導体基板の受光部または発光部に透光性板材を直接に貼着する直貼り構造によって、高感度化、パッケージの小型化、薄型化、受光部または発光部へのダスト混入の防止などが可能となる。また凸部によって、透光性接着剤の電極部側への流れを堰き止めることなどが可能となる。凸部どうしの間にも間隙を有することにより、二点塗布方式、毛細管現象を利用するアンダーフィル方式のいずれを採用する場合も、透光性接着剤に巻き込まれる空気を間隙を通じて逃して内部ボイドを抑えることができ、前記間隙を適当幅にしておけば透光性接着剤が入り込んでも表面張力が働くため流れ出ることはない。   With the above configuration, a direct attachment structure that directly attaches a translucent plate to the light receiving part or light emitting part of the semiconductor substrate increases the sensitivity, makes the package smaller and thinner, and prevents dust from entering the light receiving part or light emitting part. Prevention becomes possible. Further, the convex portion can block the flow of the translucent adhesive toward the electrode portion. By having a gap between the convex parts, both the two-point coating method and the underfill method using the capillary phenomenon can be used to escape the air trapped in the translucent adhesive through the gap. If the gap is set to an appropriate width, even if a translucent adhesive enters, the surface tension works and does not flow out.

複数の凸部は、電極部が半導体基板のどの位置に配置されているのかに応じて、電極部と受光部または発光部との間を仕切る方向に配列すればよい。たとえば、複数の凸部は受光部または発光部の外周に沿う方向に配列することができる。複数の凸部を、受光部または発光部の少なくとも２辺に沿って配列し且つ均一な高さとし、透光性板材を前記複数の凸部を介して前記受光部または発光部上に配置するのが都合よい。凸部によって、受光部または発光部と透光性板材との間の間隙を規制して正確に位置決めできるからである。   The plurality of convex portions may be arranged in a direction in which the electrode portion and the light receiving portion or the light emitting portion are partitioned depending on the position of the electrode portion on the semiconductor substrate. For example, the plurality of convex portions can be arranged in a direction along the outer periphery of the light receiving portion or the light emitting portion. The plurality of convex portions are arranged along at least two sides of the light receiving portion or the light emitting portion and have a uniform height, and the translucent plate material is disposed on the light receiving portion or the light emitting portion via the plurality of convex portions. Is convenient. This is because the convex portion can accurately position the light receiving portion or the light emitting portion by regulating the gap between the light transmissive plate member.

凸部の配列の両端は当該凸部の配列方向と交わる方向の透光性板材の端辺よりも内側に位置するのが好ましい。このようにすると、アンダーフィル方式を採用する場合に、透光性接着剤の表面張力によって、透光性板材を支持している凸部の列の外周に回り込むことなく受光部または発光部上に流れ込むため、凸部外側へのはみ出しを防止できる。   It is preferable that both ends of the array of convex portions are located on the inner side of the end side of the translucent plate material in a direction intersecting with the array direction of the convex portions. In this case, when the underfill method is employed, the surface tension of the light-transmitting adhesive causes the light-receiving portion or the light-emitting portion on the light-receiving portion or the light-emitting portion without going around the outer periphery of the row of convex portions supporting the light-transmitting plate material. Since it flows in, the protrusion to the outer side of a convex part can be prevented.

凸部は、平面視して、受光部または発光部に対向する側が背反する側よりも短いのが好ましい。凸部どうしの間の間隙は、内端が外端よりも広がったテーパ状となるので、透光性接着剤に巻き込まれる空気を確実に逃がすことができるからである。二点塗布方式の場合に特に好ましい形状である。凸部の上面の形状は、丸みを帯びるのが好ましい。   The convex portion is preferably shorter than the opposite side of the light receiving portion or the light emitting portion in plan view. This is because the gap between the convex portions has a tapered shape in which the inner end is wider than the outer end, so that air caught in the translucent adhesive can be surely released. This is a particularly preferable shape in the case of the two-point coating method. The shape of the upper surface of the convex portion is preferably rounded.

本発明の光学デバイスは、透光性板材を透光性接着剤によって直接貼着する半導体基板に予め複数の凸部を間隙を設けて形成するので、二点塗布方式、アンダーフィル方式のいずれで透光性接着剤を供給する場合も、透光性接着剤に巻き込まれる空気を逃して内部ボイドを抑えることができる。前記間隙を適当幅にしておけば透光性接着剤が入り込んでも表面張力が働くため流れ出ることはない。   The optical device of the present invention is formed by providing a plurality of convex portions with a gap in advance on a semiconductor substrate to which a light-transmitting plate material is directly bonded by a light-transmitting adhesive. Even when the translucent adhesive is supplied, the air trapped in the translucent adhesive can be released to suppress the internal voids. If the gap is set to an appropriate width, even if a light-transmitting adhesive enters, the surface tension works so that it does not flow out.

凸部の配列の両端を当該凸部の配列方向と交わる方向の透光性板材の端辺よりも内側に位置させることで、アンダーフィル方式を採用する場合に透光性接着剤が凸部外側へ回り込んではみ出すことを防止できる。凸部によって、受光部または発光部と透光性板材との間の間隙を規制することも可能である。   By adopting the underfill method by placing both ends of the array of convex portions inside the edge of the translucent plate in the direction intersecting the array direction of the convex portions, the translucent adhesive is outside the convex portion. It can be prevented that it spills out. It is also possible to regulate the gap between the light receiving part or the light emitting part and the translucent plate by the convex part.

以下、本発明の実施の形態を図面を参照して説明する。光学デバイスとして固体撮像装置とＬＥＤ装置を挙げるがこれに限定されるものではない。
図１から図３に示す固体撮像装置は、固体撮像素子１aと、透光性板材２と、凹状の基板４とを有している。固体撮像素子１aは、半導体基板１１の中央に受光部１２aが形成され、基板周縁部に複数の電極部１３が形成されている。透光性板材２は、受光部１２a上に透光性接着剤５により貼着されている。固体撮像素子１aの電極部１３と基板４に設けられたリード４１とはワイヤ４２により接続されている。透光性板材２の上面を除く基板４内は遮光樹脂４３で埋められている。なお図２、図３においては理解を容易にするために一部部材の図示を省略している。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Examples of the optical device include, but are not limited to, a solid-state imaging device and an LED device.
The solid-state imaging device shown in FIGS. 1 to 3 includes a solid-state imaging element 1 a, a translucent plate member 2, and a concave substrate 4. In the solid-state imaging device 1a, a light receiving portion 12a is formed at the center of a semiconductor substrate 11, and a plurality of electrode portions 13 are formed at a peripheral portion of the substrate. The translucent plate 2 is stuck on the light receiving part 12a with a translucent adhesive 5. The electrode part 13 of the solid-state imaging device 1 a and the lead 41 provided on the substrate 4 are connected by a wire 42. The inside of the substrate 4 excluding the upper surface of the translucent plate 2 is filled with a light shielding resin 43. In FIG. 2 and FIG. 3, illustration of some members is omitted for easy understanding.

半導体基板１１上における電極部１３の形成領域よりも内側には、複数の凸部３１が受光部１２aの外周に沿って適当な間隙３２を設けて配列されている。凸部３１は平面視して長方形であり、受光部１２aの１組の対辺の各々に沿って配列されている。凸部３１の配列長さは、受光部１２aの対応する辺よりも長く、かつ透光性板材２の対応する辺よりも短くて、配列の両端は凸部３１の配列方向と交わる方向の透光性板材２の辺よりも内側に位置している。   On the inner side of the formation region of the electrode part 13 on the semiconductor substrate 11, a plurality of convex parts 31 are arranged along the outer periphery of the light receiving part 12a with appropriate gaps 32 provided. The convex portions 31 are rectangular in plan view, and are arranged along each of a pair of opposite sides of the light receiving portion 12a. The arrangement length of the projections 31 is longer than the corresponding side of the light receiving unit 12 a and shorter than the corresponding side of the translucent plate 2, and both ends of the arrangement are transparent in the direction intersecting the arrangement direction of the projections 31. It is located inside the side of the light plate 2.

凸部３１の高さは、受光部１２a上に液状で供給される透光性接着剤５を堰き止めるために必要な高さで且つ均一な高さである。凸部３１間の間隙３２は透光性接着剤５が実質上流れ出さない寸法である。凸部３１の高さ、間隙とも、予想されるボイドの径より大きい。たとえば透光性板材２が長さ５mm〜１２mm、幅４mm〜１１mm、厚み０．３mm〜１mmであって、透光性接着剤５としてＵＶ硬化型アクリル系接着剤を０．３mg〜２mg塗布する場合、凸部３１の高さ８μm〜１mm、間隙３２の幅１μm〜１０mmとされる。   The height of the convex portion 31 is a height that is necessary and uniform to dam the translucent adhesive 5 that is supplied in liquid form on the light receiving portion 12a. The gap 32 between the convex portions 31 has a dimension such that the translucent adhesive 5 does not substantially flow out. Both the height and gap of the protrusion 31 are larger than the expected void diameter. For example, the translucent plate 2 has a length of 5 mm to 12 mm, a width of 4 mm to 11 mm, and a thickness of 0.3 mm to 1 mm, and 0.3 mg to 2 mg of UV curable acrylic adhesive is applied as the translucent adhesive 5. In this case, the height of the convex portion 31 is 8 μm to 1 mm, and the width of the gap 32 is 1 μm to 10 mm.

上記固体撮像装置の製造方法を図４をも参照して説明する。
図４（ａ）に示すように、固体撮像素子１aと透光性板材２とを一体に形成する。そのためには、ウェーハ状態で、固体撮像素子１aを複数個形成する。また固体撮像素子１aごとの半導体基板１１上に上述の複数の凸部３１を形成する。凸部３１の形成は、たとえば、アクリレイトなどの感光性材料を塗布し、アクリレイトマスクを形成した後、フォトリソグラフィ技術を用いて、凸部３１となる部分のみを硬化させ、それ以外の部分を有機剤で除去することによる。その後に、固体撮像素子１aごとの受光部１２a上に液状の透光性接着剤５を塗布し、凸部３１に載るように透光性板材２を配置し、透光性接着剤５を硬化させて透光性板材２を受光部１２a上に接着する。最後に固体撮像素子１ａごとにダイシングする。 A method of manufacturing the solid-state imaging device will be described with reference to FIG.
As shown in FIG. 4A, the solid-state imaging device 1a and the translucent plate 2 are integrally formed. For this purpose, a plurality of solid-state imaging devices 1a are formed in a wafer state. Further, the plurality of convex portions 31 described above are formed on the semiconductor substrate 11 for each solid-state imaging device 1a. The protrusion 31 is formed by, for example, applying a photosensitive material such as acrylate and forming an acrylate mask, and then using a photolithography technique to cure only the portion that will become the protrusion 31 and the other portions. By removing with organic agent. After that, the liquid translucent adhesive 5 is applied on the light receiving portion 12a of each solid-state imaging device 1a, the translucent plate material 2 is disposed so as to be placed on the convex portion 31, and the translucent adhesive 5 is cured. Then, the translucent plate 2 is bonded onto the light receiving portion 12a. Finally, dicing is performed for each solid-state imaging device 1a.

透光性板材２が貼着された固体撮像素子１aを、図４（ｂ）から図４（ｄ）に示すように、基板４にダイボンディングし、基板４のリード４１にワイヤ４２によりボンディングし、透光性板材２の上面を除く基板４内を遮光樹脂４３を塗布して埋める。   As shown in FIGS. 4B to 4D, the solid-state imaging device 1a to which the translucent plate material 2 is adhered is die-bonded to the substrate 4 and bonded to the leads 41 of the substrate 4 with wires 42. The inside of the substrate 4 excluding the upper surface of the translucent plate material 2 is filled with a light shielding resin 43.

以上の固体撮像装置では、半導体基板１１の受光部１２aに透光性板材２を直接に貼着する直貼り構造であることから、高感度化、パッケージの小型化、薄型化、受光部１２aへのダスト混入の防止などが可能である。また凸部３１によって、受光部１２aと透光性板材２との間の間隙を規制して正確に位置決めし、透光性接着剤５の電極部１３側への流れを堰き止めることができる。凸部３１間の間隙３２は適当幅にしているため、透光性接着剤５が流れ出ることはなく、その一方で、透光性接着剤５に巻き込まれる空気を逃して内部ボイドを抑えることができる。   In the above solid-state imaging device, since it has a direct attachment structure in which the light-transmitting plate 2 is directly attached to the light receiving portion 12a of the semiconductor substrate 11, the sensitivity is increased, the package size is reduced, the thickness is reduced, and the light receiving portion 12a. It is possible to prevent dust contamination. Moreover, the convex part 31 can regulate the gap between the light receiving part 12a and the translucent plate 2 and accurately position it, and can block the flow of the translucent adhesive 5 toward the electrode part 13 side. Since the gap 32 between the convex portions 31 has an appropriate width, the translucent adhesive 5 does not flow out. On the other hand, air trapped in the translucent adhesive 5 can be released to suppress internal voids. it can.

透光性接着剤５を供給する方式について詳述する。上述の固体撮像装置では、透光性板材２を半導体基板１１の凸部３１上に載せるに先立って、受光部１２a上に液状の透光性接着剤５を塗布する、という塗布方式をとっている。このときに、図５に仮想線で示したような二点に透光性接着剤５を塗布する二点塗布方式をとると、各点の透光性接着剤５が透光性板材２によって押されて濡れ広がる領域は一点塗布方式に比べて小さいため、透光性接着剤５は凸部３１の列の内側に保持される。二点の透光性接着剤５間の空気は凸部３１間の間隙３２から逃がされる。図示したように、透光性接着剤５に巻き込まれてボイド６が生じた場合も、透光性接着剤５自体が間隙３２に入り込むに伴って逃がされることになり、受光部１２a上に残ることがない。間隙３２に入り込んだ透光性接着剤５は、間隙３２が上述のように設定されているため表面張力がはたらき、凸部３１の外側に流れ出ることはない。よって凸部３１外側への透光性接着剤５のはみ出しを防止できる。   A method for supplying the translucent adhesive 5 will be described in detail. In the above-described solid-state imaging device, an application method in which the liquid translucent adhesive 5 is applied onto the light receiving portion 12a before the translucent plate 2 is placed on the convex portion 31 of the semiconductor substrate 11 is employed. Yes. At this time, when a two-point coating method is applied in which the translucent adhesive 5 is applied to two points as indicated by phantom lines in FIG. 5, the translucent adhesive 5 at each point is transferred by the translucent plate 2. Since the area that is pushed and spreads out is small compared to the one-point application method, the translucent adhesive 5 is held inside the row of the convex portions 31. Air between the two translucent adhesives 5 is released from the gap 32 between the convex portions 31. As shown in the figure, even when the void 6 is generated by being caught in the translucent adhesive 5, the translucent adhesive 5 itself is released as it enters the gap 32 and remains on the light receiving portion 12 a. There is nothing. Since the gap 32 is set as described above, the translucent adhesive 5 that has entered the gap 32 acts as a surface tension and does not flow out of the convex portion 31. Therefore, it is possible to prevent the translucent adhesive 5 from protruding to the outside of the convex portion 31.

図６は、アンダーフィル方式で透光性接着剤５を供給した状態を示す。透光性板材２を半導体基板１１の凸部３１上に載せた後に、半導体基板１１と透光性板材２との間に毛細管現象を利用して透光性接着剤５を流入させた状態である。上述のように、凸部３１の配列長さは透光性板材２の対応する辺よりも短く、その配列の両端は凸部３１の配列方向と交わる方向の透光性板材２の辺よりも内側に位置している。そのため、透光性接着剤５は、その表面張力によって、透光性板材２の外周に回り込むことなく受光部１２a上に流れ込む。ボイドが生じた場合に間隙３２から逃がされ受光部１２a上に残らないこと、透光性接着剤５が間隙３２を通じて凸部３１の外側に流れ出ないことは、二点塗布方式と同様である。   FIG. 6 shows a state in which the translucent adhesive 5 is supplied by the underfill method. After the translucent plate 2 is placed on the convex portion 31 of the semiconductor substrate 11, the translucent adhesive 5 is caused to flow between the semiconductor substrate 11 and the translucent plate 2 using the capillary phenomenon. is there. As described above, the arrangement length of the projections 31 is shorter than the corresponding side of the translucent plate 2, and both ends of the arrangement are shorter than the sides of the translucent plate 2 in the direction intersecting the arrangement direction of the projections 31. Located inside. Therefore, the translucent adhesive 5 flows onto the light receiving portion 12a without wrapping around the outer periphery of the translucent plate 2 due to the surface tension. When a void is generated, it is escaped from the gap 32 and does not remain on the light receiving portion 12a, and the fact that the translucent adhesive 5 does not flow outside the convex portion 31 through the gap 32 is the same as in the two-point coating method. .

図７に示す固体撮像装置では、凸部３３は、平面視して、受光部１２aに対向する側が背反する側よりも短い台形である。凸部３３間の間隙３２がテーパ状になることから、透光性接着剤５を二点塗布方式で供給する場合も、アンダーフィル方式で供給する場合も、半導体基板１１と透光性板材２との間の空気を隙間３２に多く集めて、凸部３３の外側へ逃がすことができる。このため受光部１２a上のボイドをより確実に防止することができる。その他は図１の固体撮像装置と同じ構成であり、同様の効果が得られる。   In the solid-state imaging device shown in FIG. 7, the convex portion 33 is a trapezoid that is shorter in plan view than the opposite side on the side facing the light receiving portion 12 a. Since the gap 32 between the convex portions 33 is tapered, the semiconductor substrate 11 and the translucent plate 2 are used regardless of whether the translucent adhesive 5 is supplied by a two-point application method or an underfill method. A large amount of air can be collected in the gap 32 and escape to the outside of the convex portion 33. For this reason, the void on the light-receiving part 12a can be prevented more reliably. The rest of the configuration is the same as that of the solid-state imaging device of FIG. 1, and the same effects can be obtained.

図８に示す固体撮像装置では、凸部３４は、図１の凸部３１よりも小さく、かつ、多く形成されている。凸部３４の上面の形状は丸みを帯びている。このため凸部３４間の間隙３２でのボイドの移動スピードが速くなり、凸部３４の外側へ逃がしやすい。その他は図１の固体撮像装置と同じ構成であり、同様の効果が得られる。   In the solid-state imaging device shown in FIG. 8, the convex part 34 is smaller than the convex part 31 of FIG. The shape of the upper surface of the convex portion 34 is rounded. For this reason, the moving speed of the void in the gap 32 between the convex portions 34 is increased, and it is easy to escape to the outside of the convex portion 34. The rest of the configuration is the same as that of the solid-state imaging device of FIG. 1, and the same effects can be obtained.

図９に示すLED装置は、LED素子１bと透光性板材２と基板４とを有している。LED素子１bにおいては、半導体基板１１の一端寄りに発光部１２bが形成され、他端寄りに電極部１３が形成されている。発光部１２bと電極部１３との間には、平面視して長方形の凸部３１が、発光部１２bの１辺に沿って配列されている。透光性板材２は、凸部３１に載ることなく、発光部１２b上に透光性接着剤５により貼着されている。   The LED device shown in FIG. 9 includes an LED element 1b, a translucent plate 2 and a substrate 4. In the LED element 1b, a light emitting portion 12b is formed near one end of the semiconductor substrate 11, and an electrode portion 13 is formed near the other end. Between the light emitting part 12b and the electrode part 13, a rectangular convex part 31 in a plan view is arranged along one side of the light emitting part 12b. The translucent plate 2 is stuck on the light emitting part 12b by the translucent adhesive 5 without being placed on the convex part 31.

凸部３１の配列長さは、発光部１２bの対応する辺よりも長く、かつ透光性板材２の対応する辺よりも短い。凸部３１の配列の両端はその配列方向と交わる方向の透光性板材２の辺よりも内側に位置している。凸部３１の高さは、発光部１２b上に液状で供給される透光性接着剤５を堰き止めるために必要な高さで且つ均一な高さである。凸部３１間の間隙３２は透光性接着剤５が実質上流れ出さない寸法である。凸部３１の高さ、間隙とも、予想されるボイドの径より大きい。４４ａ，４４ｂは基板４に設けられた外部端子である。   The arrangement length of the protrusions 31 is longer than the corresponding side of the light emitting unit 12 b and shorter than the corresponding side of the translucent plate 2. Both ends of the array of the protrusions 31 are located on the inner side of the side of the translucent plate 2 in the direction intersecting with the array direction. The height of the convex portion 31 is a height that is necessary and uniform to dam the translucent adhesive 5 that is supplied in liquid form on the light emitting portion 12b. The gap 32 between the convex portions 31 has a dimension such that the translucent adhesive 5 does not substantially flow out. Both the height and gap of the protrusion 31 are larger than the expected void diameter. Reference numerals 44 a and 44 b are external terminals provided on the substrate 4.

このLED装置でも、図１の固体撮像装置と同様に、発光部１２bへの透光性板材２の直貼り構造による効果が得られる。凸部３１が存在することで、ボイドが生じた場合に間隙３２から逃がされ発光部１２b上に残らないこと、透光性接着剤５が間隙３２を通じて凸部３１の外側に流れ出ないことも、図１の固体撮像装置と同様である。   In this LED device as well, the effect of the direct pasting structure of the translucent plate 2 to the light emitting portion 12b can be obtained as in the solid-state imaging device of FIG. Due to the presence of the convex portion 31, when a void is generated, it escapes from the gap 32 and does not remain on the light emitting portion 12 b, and the translucent adhesive 5 does not flow out of the convex portion 31 through the gap 32. This is the same as the solid-state imaging device of FIG.

上述の直貼り構造および凸部３１の配列を適用して同様の効果が得られる光学デバイスは、固体撮像素子（ＣＣＤなど）、発光素子（ＬＥＤ、半導体レーザー）、受光素子（フォトダイオード、フォトトランジスタ）などである。   Optical devices that can obtain the same effect by applying the above-described direct pasting structure and the arrangement of the convex portions 31 include solid-state imaging devices (CCD, etc.), light emitting devices (LEDs, semiconductor lasers), light receiving devices (photodiodes, phototransistors) ) Etc.

固体撮像素子は、デジタルカメラ、携帯電話、車載用カメラに搭載するカメラモジュールなどに利用される。ＬＥＤは、携帯電話の発光表示、照明モジュールなどに利用される。半導体レーザーは、ＢＤ、ＤＶＤ、ＣＤ−ＲＯＭドライブなどに利用される。   A solid-state imaging device is used for a digital camera, a mobile phone, a camera module mounted on a vehicle-mounted camera, and the like. The LED is used for a light emitting display of a mobile phone, an illumination module, and the like. The semiconductor laser is used for BD, DVD, CD-ROM drive and the like.

本発明は、デジタルカメラ、携帯電話、車載用カメラに搭載するカメラモジュール、携帯電話の発光表示、照明モジュール、ＢＤ、ＤＶＤ、ＣＤ−ＲＯＭドライブなどを構成するのに有用である。   The present invention is useful for configuring a digital camera, a mobile phone, a camera module mounted on a vehicle-mounted camera, a light emitting display of a mobile phone, a lighting module, a BD, a DVD, a CD-ROM drive, and the like.

本発明の固体撮像装置の構成を示す断面図Sectional drawing which shows the structure of the solid-state imaging device of this invention 図１の固体撮像装置の概略構成を示す分解斜視図1 is an exploded perspective view showing a schematic configuration of the solid-state imaging device of FIG. 図１の固体撮像装置の一部の平面図および断面図A plan view and a cross-sectional view of a part of the solid-state imaging device of FIG. 図１の固体撮像装置の製造方法を説明する工程断面図Process sectional drawing explaining the manufacturing method of the solid-state imaging device of FIG. 図１の固体撮像装置を製造する際に透光性接着剤を二点塗布方式で供給した場合の広がりを示す模式図Schematic diagram showing the spread when a translucent adhesive is supplied by a two-point coating method when manufacturing the solid-state imaging device of FIG. 図１の固体撮像装置を製造する際に透光性接着剤をアンダーフィル方式で供給した場合の広がりを示す模式図Schematic diagram showing the spread when a light-transmitting adhesive is supplied by an underfill method when manufacturing the solid-state imaging device of FIG. 本発明の他の固体撮像装置の概略構成を示す平面図The top view which shows schematic structure of the other solid-state imaging device of this invention 本発明の他の固体撮像装置の概略構成を示す平面図The top view which shows schematic structure of the other solid-state imaging device of this invention 本発明のLED装置の構成を示す平面図および断面図The top view and sectional drawing which show the structure of the LED device of this invention 従来の固体撮像装置の断面図Sectional view of a conventional solid-state imaging device 従来の他の固体撮像装置の概略構成を示す分解斜視図An exploded perspective view showing a schematic configuration of another conventional solid-state imaging device 図１１の固体撮像装置を製造する際に透光性接着剤を塗布方式で供給した場合の広がりを示す模式図FIG. 11 is a schematic diagram showing the spread when a translucent adhesive is supplied by a coating method when the solid-state imaging device of FIG. 11 is manufactured. 図１１の固体撮像装置を製造する際に透光性接着剤をアンダーフィル方式で供給した場合の広がりを示す模式図FIG. 11 is a schematic diagram showing the spread when a light-transmitting adhesive is supplied by an underfill method when the solid-state imaging device of FIG. 11 is manufactured.

符号の説明Explanation of symbols

1a 固体撮像素子
1b LED素子
２ 透光性板材
４ 基板
５ 透光性接着剤
６ ボイド
11 半導体基板
12ａ 受光部
12ｂ 発光部
13 電極部
31 凸部
32 間隙
33 凸部
34 凸部 1a Solid-state image sensor
1b LED element 2 Translucent plate 4 Substrate 5 Translucent adhesive 6 Void
11 Semiconductor substrate
12a Receiver
12b Light emitting part
13 Electrode section
31 Convex
32 gap
33 Convex
34 Convex

Claims (11)

受光部または発光部と電極部とが形成された半導体基板と、前記受光部または発光部上に透光性接着剤により貼着された透光性板材とを有する光学デバイスであって、前記半導体基板に複数の凸部が、前記受光部または発光部と前記電極部との間を仕切るように且つ互いの間に適当間隙を設けて形成され、前記透光性接着剤が、前記受光部または発光部上に供給されて前記凸部および間隙に達したものであることを特徴とする光学デバイス。 An optical device comprising: a semiconductor substrate on which a light receiving part or a light emitting part and an electrode part are formed; and a light transmissive plate material adhered to the light receiving part or the light emitting part with a light transmissive adhesive. A plurality of convex portions are formed on the substrate so as to partition between the light receiving portion or the light emitting portion and the electrode portion and with an appropriate gap between them, and the translucent adhesive is An optical device, wherein the optical device is supplied onto the light emitting part and reaches the convex part and the gap . 凸部の配列の両端は当該凸部の配列方向と交わる方向の透光性板材の端辺よりも内側に位置することを特徴とする請求項１記載の光学デバイス。   The optical device according to claim 1, wherein both ends of the array of convex portions are positioned on the inner side of the end side of the translucent plate in a direction intersecting with the array direction of the convex portions. 凸部は、平面視して、受光部または発光部に対向する側が背反する側よりも短いことを特徴とする請求項１記載の光学デバイス。   2. The optical device according to claim 1, wherein the convex portion is shorter than the opposite side of the light receiving portion or the light emitting portion when viewed from above. 凸部の上面は丸みを帯びていることを特徴とする請求項１に記載の光学デバイス。   The optical device according to claim 1, wherein an upper surface of the convex portion is rounded. 複数の凸部は受光部または発光部の外周に沿う方向に配列されていることを特徴とする請求項１記載の光学デバイス。   The optical device according to claim 1, wherein the plurality of convex portions are arranged in a direction along an outer periphery of the light receiving portion or the light emitting portion. 複数の凸部は受光部または発光部の少なくとも２辺に沿って配列され且つ均一な高さで形成されており、透光性板材は前記複数の凸部を介して前記受光部または発光部上に配置されていることを特徴とする請求項１記載の光学デバイス。   The plurality of convex portions are arranged along at least two sides of the light receiving portion or the light emitting portion and are formed with a uniform height, and the translucent plate material is disposed on the light receiving portion or the light emitting portion via the plurality of convex portions. The optical device according to claim 1, wherein the optical device is disposed on the optical device. 受光部または発光部と電極部とが形成される半導体基板に、複数の凸部を、前記受光部または発光部と前記電極部との間を仕切るように且つ互いの間に適当間隙を設けて形成する工程と、前記複数の凸部を有する半導体基板の受光部または発光部上に液状の透光性接着剤を供給する工程と、前記複数の凸部を有する半導体基板の受光部または発光部上に透光性板材を配置する工程と、前記半導体基板と透光性板材との間の透光性接着剤を硬化させて前記受光部または発光部上に透光性板材を貼着する工程と、を有することを特徴とする光学デバイスの製造方法。   A plurality of convex portions are provided on a semiconductor substrate on which the light receiving portion or the light emitting portion and the electrode portion are formed, and an appropriate gap is provided between each other so as to partition the light receiving portion or the light emitting portion and the electrode portion. A step of forming, a step of supplying a liquid translucent adhesive on the light receiving portion or light emitting portion of the semiconductor substrate having the plurality of convex portions, and a light receiving portion or light emitting portion of the semiconductor substrate having the plurality of convex portions. A step of disposing a translucent plate material on the surface, and a step of curing the translucent adhesive between the semiconductor substrate and the translucent plate material and attaching the translucent plate material on the light receiving portion or the light emitting portion. And a method for manufacturing an optical device. 凸部の配列の両端は当該凸部の配列方向と交わる方向の透光性板材の端辺よりも内側に位置することを特徴とする請求項７記載の光学デバイスの製造方法。   8. The method of manufacturing an optical device according to claim 7, wherein both ends of the array of convex portions are positioned on the inner side of the end side of the translucent plate in a direction intersecting with the array direction of the convex portions. 凸部は、平面視して、受光部または発光部に対向する側が背反する側よりも短いことを特徴とする請求項７記載の光学デバイスの製造方法。   The method of manufacturing an optical device according to claim 7, wherein the convex portion is shorter than the opposite side of the light receiving portion or the light emitting portion when viewed from above. 凸部の上面は丸みを帯びていることを特徴とする請求項７記載の光学デバイスの製造方法。   8. The method of manufacturing an optical device according to claim 7, wherein the upper surface of the convex portion is rounded. 複数の凸部は受光部または発光部の少なくとも２辺に沿って配列するとともに均一な高さで形成し、透光性板材は前記複数の凸部を介して前記受光部または発光部上に配置することを特徴とする請求項７記載の光学デバイスの製造方法。   The plurality of convex portions are arranged along at least two sides of the light receiving portion or the light emitting portion and are formed with a uniform height, and the translucent plate material is disposed on the light receiving portion or the light emitting portion via the plurality of convex portions. The method of manufacturing an optical device according to claim 7.
JP2008106274A 2007-10-30 2008-04-16 Optical device and manufacturing method thereof Expired - Fee Related JP5252977B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008106274A JP5252977B2 (en) 2007-10-30 2008-04-16 Optical device and manufacturing method thereof
US12/209,233 US7911018B2 (en) 2007-10-30 2008-09-12 Optical device and method of manufacturing the same
US12/929,795 US7977138B1 (en) 2007-10-30 2011-02-16 Optical device and method of manufacturing the same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007281052 2007-10-30
JP2007281052 2007-10-30
JP2008106274A JP5252977B2 (en) 2007-10-30 2008-04-16 Optical device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JP2009135401A JP2009135401A (en) 2009-06-18
JP5252977B2 true JP5252977B2 (en) 2013-07-31

Family

ID=40616000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008106274A Expired - Fee Related JP5252977B2 (en) 2007-10-30 2008-04-16 Optical device and manufacturing method thereof

Country Status (2)

Country Link
JP (1) JP5252977B2 (en)
CN (1) CN101425526A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010098117A (en) * 2008-10-16 2010-04-30 Nec Electronics Corp Electronic device and method of manufacturing the same
JP6212985B2 (en) * 2013-06-27 2017-10-18 住友電気工業株式会社 Light receiving device and hybrid image sensor
JP7012510B2 (en) * 2016-11-08 2022-02-14 シチズン電子株式会社 Optical members and light emitting devices
CN107331625A (en) * 2017-06-06 2017-11-07 华天科技（昆山）电子有限公司 Encapsulating structure of semiconductor devices and preparation method thereof
CN111900623B (en) * 2020-07-31 2021-11-30 常州纵慧芯光半导体科技有限公司 Laser device and manufacturing method and application thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2659852B2 (en) * 1990-06-29 1997-09-30 株式会社クラレ Manufacturing method of imaging device
JPH0786544A (en) * 1993-09-14 1995-03-31 Casio Comput Co Ltd Ccd device
JP2991172B2 (en) * 1997-10-24 1999-12-20 日本電気株式会社 Semiconductor device
JP2004063782A (en) * 2002-07-29 2004-02-26 Fuji Photo Film Co Ltd Solid-state image sensing device and its manufacturing method
JP2005026974A (en) * 2003-07-01 2005-01-27 Daishinku Corp Method of manufacturing piezoelectric vibration device and piezoelectric vibration device manufactured by the method
JP2006287640A (en) * 2005-03-31 2006-10-19 Fuji Photo Film Co Ltd Solid-state image sensor package, solid-state image sensor mounting board, digital camera, and method for mounting solid-state image sensor package
JP2007150266A (en) * 2005-10-28 2007-06-14 Matsushita Electric Ind Co Ltd Solid state imaging device and its manufacturing method

Also Published As

Publication number Publication date
CN101425526A (en) 2009-05-06
JP2009135401A (en) 2009-06-18

Similar Documents

Publication Publication Date Title
US7977138B1 (en) Optical device and method of manufacturing the same
JP4838501B2 (en) Imaging apparatus and manufacturing method thereof
JP4686400B2 (en) Optical device, optical device apparatus, camera module, and optical device manufacturing method
JP4863026B2 (en) Manufacturing method of camera module and camera module
JP5252977B2 (en) Optical device and manufacturing method thereof
JP2009088407A (en) Solid-state image sensing device and method for manufacturing same
KR20090038490A (en) Semiconductor device and method for manufacturing same
JP2013004534A (en) Semiconductor package
KR20060063649A (en) Photocurable-resin application method and bonding method
JP4824461B2 (en) The camera module
US20090230408A1 (en) Optical device and method for manufacturing the same
US7646539B2 (en) Optical device and manufacturing method thereof
JP2010166021A (en) Semiconductor device, and manufacturing method thereof
KR100665911B1 (en) Developing method of photoresist and developing device
JP2007317719A (en) Imaging device and its manufacturing method
JP2011054794A (en) Optical device and method of manufacturing the same
JP2009251249A (en) Wafer-like optical device and manufacturing method thereof, electronic element wafer module, sensor wafer module, electronic element module, sensor module, and electronic information apparatus
JP2014053512A (en) Solid state image pickup device and manufacturing method of the same
JP7019203B2 (en) Image sensor module and its manufacturing method
JP5694670B2 (en) Solid-state imaging device and manufacturing method thereof
JP2007150266A (en) Solid state imaging device and its manufacturing method
JP6104624B2 (en) Semiconductor device manufacturing method and semiconductor device
US20110204465A1 (en) Optical device and method of manufacturing the device
JP2008182051A (en) Optical device, optical device apparatus, camera module and method for manufacturing the optical device apparatus
JP2013004699A (en) Optical semiconductor element and method for manufacturing the same

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110221

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130108

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130218

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130319

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130416

R151 Written notification of patent or utility model registration

Ref document number: 5252977

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20160426

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees